CN213301121U

CN213301121U - Three-dimensional shape measuring device for micro space

Info

Publication number: CN213301121U
Application number: CN202022658935.2U
Authority: CN
Inventors: 黄海阳; 赵瑛璇; 仇超; 盛振; 甘甫烷
Original assignee: Shanghai Institute of Microsystem and Information Technology of CAS
Current assignee: Shanghai Institute of Microsystem and Information Technology of CAS
Priority date: 2020-11-17
Filing date: 2020-11-17
Publication date: 2021-05-28
Anticipated expiration: 2030-11-17

Abstract

The utility model relates to a measuring device for the three-dimensional shape and appearance of a tiny space, which comprises a light source component and at least two groups of detection components, wherein each detection component comprises a substrate, an insulating layer is fixedly arranged on each substrate, a plurality of silicon wires which are parallel to each other and have the same shape and size are arranged on each insulating layer, the distance between the adjacent silicon wires is equal, the wires are led out from the two ends of each silicon wire and are connected with a potential meter, and the potential meter is connected with a processor; the light source assembly scans the surface of the measured sample line by line through laser, when the laser reflected by the measured sample irradiates the detection assembly, a near-field coupling effect is generated between the silicon conducting wire and the substrate, the vibration amplitude of a resonator formed by the silicon conducting wire and the substrate is completely inhibited, and the processor calculates the position information of the reflection point on the surface of the measured sample according to continuous signals output by the potential meter connected with the silicon conducting wire. The utility model has the advantages of small volume, high precision, non-contact, etc.

Description

Three-dimensional shape measuring device for micro space

Technical Field

The utility model relates to a receive photon device and microsystem technical field a little, especially relate to a three-dimensional appearance measuring device in small space.

Background

The existing three-dimensional shape measuring device is based on various probe measuring principles, laser triangulation measuring principles and the like, most of the measuring devices are in macroscopic scale, the miniaturized three-dimensional shape measuring device is technically difficult, and various technologies have certain limitations.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the technical problem that a three-dimensional appearance measuring device in small space is provided, have advantages such as small, the precision is high, non-contact.

The utility model provides a technical scheme that its technical problem adopted is: providing a measuring device for the three-dimensional shape and appearance of a micro space, which comprises a light source component and at least two groups of detection components, wherein each detection component comprises a substrate, a layer of insulating layer is fixedly arranged on each substrate, a plurality of silicon conducting wires which are parallel to each other and have the same shape and size are arranged on each insulating layer, the distances between the adjacent silicon conducting wires are equal, conducting wires are led out from two ends of each silicon conducting wire and are connected with a potential measuring meter, and the potential measuring meter is connected with a processor; the light source assembly scans the surface of the measured sample line by line through laser, when the laser reflected by the measured sample irradiates the detection assembly, a near-field coupling effect is generated between the silicon conducting wire and the substrate, the vibration amplitude of a resonator formed by the silicon conducting wire and the substrate is completely inhibited, and the processor calculates the position information of the reflection point on the surface of the measured sample according to continuous signals output by the potential meter connected with the silicon conducting wire.

The distance between the adjacent silicon wires is one fifth of the wavelength of the laser emitted by the light source assembly.

The thickness of the insulating layer is 15-20 nm.

The insulating layer is a transparent alumina isolation layer.

The substrate is a cuboid silver matrix.

The light source assembly comprises a laser and a polygonal prism-shaped multi-surface reflector, and laser emitted by the laser irradiates to the tested sample after being reflected by the polygonal prism-shaped multi-surface reflector.

The laser device swings left and right through the first rotating shaft; the polygon prism-shaped polygon mirror is rotated by a second rotating shaft.

Advantageous effects

Since the technical scheme is used, compared with the prior art, the utility model, have following advantage and positive effect: the utility model has the advantages of small volume, high precision, non-contact, etc.

Drawings

Fig. 1 is a schematic structural diagram of an embodiment of the present invention;

FIG. 2 is a schematic diagram of the detection principle of the non-Hermite coupling specific frequency laser according to the embodiment of the present invention;

fig. 3 is a schematic diagram of the principle of detecting the position of the point light source in the embodiment of the present invention.

Detailed Description

The present invention will be further described with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Furthermore, it should be understood that various changes and modifications of the present invention may be made by those skilled in the art after reading the teachings of the present invention, and these equivalents also fall within the scope of the appended claims.

The utility model discloses an embodiment relates to a three-dimensional appearance measuring device in little space, as shown in FIG. 1, including light source subassembly and at least two sets of detection subassemblies.

Wherein, the detection assembly comprises a substrate 11, and the substrate 11 is a silver matrix in a cuboid shape. An insulating layer 12 is fixedly arranged on the substrate 11, and the insulating layer 12 is a transparent alumina isolation layer. The insulating layer 12 is provided with a plurality of parallel silicon wires 13 with the same shape and size, and the distances between the adjacent silicon wires 13 are equal, and the distances are determined according to the used laser wavelength. The two ends of each silicon wire 13 are led out to be connected with a potential meter which is connected with a processor.

The light source component comprises a laser 15 and a polygon prism-shaped polygon mirror 17, and laser emitted by the laser 15 irradiates to the tested sample 14 after being reflected by the polygon prism-shaped polygon mirror 17. Wherein, the laser 15 realizes the left-right swing through the first rotating shaft 16; the polygon mirror 17 is rotated by a second rotation shaft 18.

The three-dimensional shape measuring device in the micro space of the embodiment has the following main parameters: the cross section of the single silicon wire 13 is 60 × 100nm, the center distance is 145nm, the base body 11 is made of metal silver, and the wavelength emitted by the laser 15 is 727 nm. A conventional micro-nano processing technology is adopted, on an SOI (silicon on insulator) sheet, electron beam lithography is firstly used for etching silicon nanowires, then an ALD (atomic layer deposition) technology is used for depositing an alumina isolation layer (15-20nm), and then electron beam evaporation is used for depositing a silver substrate. When the light source wavelength is 727nm and the incident angle is 50 degrees, complete inhibition can be achieved.

When the device works, the surface of a sample to be detected 14 can be scanned line by line through laser emitted by the light source component, when the laser reflected by the sample to be detected 14 irradiates the detection component, a near-field coupling effect occurs between the silicon wire 13 and the substrate 11, the amplitude of a resonator formed by the silicon wire 13 and the substrate 11 is completely inhibited, and the processor calculates the position information of a reflective point on the surface of the sample to be detected according to continuous signals output by a potential meter connected with the silicon wire.

The measurement principle of the embodiment is realized based on the non-hermitian coupling specific frequency laser detection principle. In fig. 2, 1 and 2 are conductive lines made of a silicon material parallel to each other, L1 is a parallel beam of laser light spatially directed perpendicularly to the conductive lines 1 and 2, L2 is a projection line of the parallel beam of laser light L1 projected onto the plane of the conductive lines 1 and 2, θ is an incident angle (an acute angle between the parallel beam of laser light L1 and a normal line of the plane of the conductive lines 1 and 2), 7 is a transparent alumina isolation layer (insulation layer) having a certain thickness, and 8 is a silver substrate. The lead 1 and the lead 2 are fixedly connected on a transparent alumina isolation layer 7, and the transparent alumina isolation layer 7 is fixedly connected with a silver substrate 8. 3 and 4 are lead-out wires fixedly connected with two ends of the wire 1 and the wire 2, 5 and 6 are potentiometers, and the potential difference between two ends of the wire 1 and the wire 2 can be respectively measured through the lead-out wires 3 and 4.

When laser irradiates a single silicon wire, the silicon wire is illuminated, and a potential difference is generated at two ends of the silicon wire. In fig. 2, for a laser parallel beam L1 with a specific wavelength (e.g., the light source wavelength range is 700 and 750nm), if the distance between the conducting wire 1 and the conducting wire 2 and the thickness of the alumina isolation layer 7 are proper (e.g., the distance between the conducting wire 1 and the conducting wire 2 is one fifth of the light wavelength, and the thickness of the alumina isolation layer 7 is 15-20nm), the two conducting wires 1 and 2 parallel to each other and the silver substrate 8 together form a resonator, and under the irradiation of the laser parallel beam L1, a near-field coupling effect occurs between the conducting wire 1, the conducting wire 2 and the silver substrate 8, and then the brightness of the conducting wire 1 and the conducting wire 2 and the potential difference between the two ends are changed. According to the coupled mode theory, the potential difference between the two ends of the conducting wire 1 and the conducting wire 2 is related to the incident angle theta, and particularly, a certain incident angle theta can be realized through elaborately designing parameters₀The amplitude of the resonator is completely inhibited, namely the potential difference between two ends of the conducting wire 1 which is closer to the light source tends to zero, while the potential difference between two ends of the conducting wire 2 which is farther from the light source does not change obviously, and the laser incidence angle theta at the position is adjusted₀Referred to as the coupling angle of incidence. In order to improve the detection sensitivity, whether the light incident angle is the coupling incident angle theta can be judged according to the ratio of the potential difference between the two ends of the conducting wire 1 and the conducting wire 2₀: when the light incident angle is the coupling incident angle theta₀When the voltage difference between the two ends of the conducting wire 1 and the conducting wire 2 reaches an extreme value. According to this principle, theta can be accurately measured₀The value of (c).

Based on the above principle, a point light source position detection principle is shown in FIG. 3, in which 1a is a plurality of identical silicon materialsThe parallel wire group, 7a is a transparent alumina isolation layer (insulating layer) with certain thickness, 8a is a silver substrate, and the dimensions of the wire group 1a, the isolation layer 7a and the silver substrate 8a are properly set, so that the adjacent wires in the wire group 1a all meet the condition of the non-Hermite coupling phenomenon; s is a scattered light source capable of emitting or reflecting light of a specific wavelength, [ theta ]₀Is the coupling angle of incidence. According to the above-mentioned non-Hermite coupling specific frequency laser detection principle, when the light emitted from the point S is irradiated onto the lead group 1a, the incident angle is the coupling incident angle theta₀The 2 illuminated wires a1 and a2 appear dark with a near zero potential difference across them.

The light source position can be found according to the positions of 2 dark wires in the wire group. A rectangular coordinate system oxy is provided, in which coordinates of a1 point are (x1, y1), coordinates of a2 point are (x2, y2), coordinates of a light source S point are (x3, y3), and then coordinates of a1 point (x1, y1), coordinates of a2 point (x2, y2), and θ₀Find the coordinates (x3, y3) of the light source S point:

therefore, based on this principle, since the laser scans the surface of the sample 14 line by line, the measuring apparatus of the present embodiment can measure the three-dimensional topography of the surface of the sample 14.

Claims

1. A measuring device for the three-dimensional shape and appearance of a micro space comprises a light source assembly and at least two groups of detection assemblies, and is characterized in that the detection assemblies comprise a substrate, a layer of insulating layer is fixedly arranged on the substrate, a plurality of silicon conducting wires which are parallel to each other and have the same shape and size are arranged on the insulating layer, the distances between the adjacent silicon conducting wires are equal, conducting wires are led out from two ends of each silicon conducting wire and are connected with a potential meter, and the potential meter is connected with a processor; the light source assembly scans the surface of the measured sample line by line through laser, when the laser reflected by the measured sample irradiates the detection assembly, a near-field coupling effect is generated between the silicon conducting wire and the substrate, the vibration amplitude of a resonator formed by the silicon conducting wire and the substrate is completely inhibited, and the processor calculates the position information of the reflection point on the surface of the measured sample according to continuous signals output by the potential meter connected with the silicon conducting wire.

2. The apparatus according to claim 1, wherein the distance between the adjacent silicon wires is one fifth of the wavelength of the laser emitted from the light source module.

3. The micro-space three-dimensional topography measuring device according to claim 1, wherein said insulating layer has a thickness of 15-20 nm.

4. The apparatus of claim 1, wherein the insulating layer is a transparent alumina isolation layer.

5. The micro-space three-dimensional topography measuring device according to claim 1, wherein said substrate is a silver matrix in a rectangular parallelepiped shape.

6. The micro-space three-dimensional topography measuring device according to claim 1, wherein said light source assembly comprises a laser and a polygon mirror, and laser light emitted from said laser is reflected by said polygon mirror and then irradiated to said sample to be measured.

7. The micro-space three-dimensional topography measuring device according to claim 6, wherein said laser is swung left and right by a first rotation axis; the polygon prism-shaped polygon mirror is rotated by a second rotating shaft.