WO2022104906A1 - 一种带有非厄米耦合角度检测纠正装置的微位移机构 - Google Patents

一种带有非厄米耦合角度检测纠正装置的微位移机构 Download PDF

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WO2022104906A1
WO2022104906A1 PCT/CN2020/133054 CN2020133054W WO2022104906A1 WO 2022104906 A1 WO2022104906 A1 WO 2022104906A1 CN 2020133054 W CN2020133054 W CN 2020133054W WO 2022104906 A1 WO2022104906 A1 WO 2022104906A1
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silicon
rigid
wire
micro
hermitian
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PCT/CN2020/133054
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English (en)
French (fr)
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黄海阳
赵瑛璇
仇超
盛振
甘甫烷
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中国科学院上海微系统与信息技术研究所
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Publication of WO2022104906A1 publication Critical patent/WO2022104906A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes

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  • the invention relates to the technical field of micro-nano photonic devices and micro-displacement measurement, in particular to a micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device.
  • the parallelogram flexible hinge mechanism is a very widely used micro-displacement mechanism. Due to unavoidable manufacturing errors, deviations in the direction of the displacement force and the position of the action point, etc., the parallelogram flexible hinge mechanism is prone to parasitic displacement errors.
  • a typical parallelogram flexible hinge mechanism is shown in Figure 1: in the figure 01 is a rigid upper plate, 02 is a flexible hinge, 03 is a rigid vertical plate, and 04 is a rigid bottom plate; rigid upper plate 01, rigid bottom plate 04, 2 rigid plates
  • the vertical plate 03 and the four flexible hinges form a parallelogram flexible hinge mechanism, wherein the rigid upper plate 01 and the rigid bottom plate 04 are congruent and parallel to each other, the left and right two rigid vertical plates 03 are congruent and parallel to each other, and the four flexible hinges are all congruent and parallel to each other.
  • a fixed rectangular coordinate system o-x-y-z is established with the geometric center of the rigid upper plate 01 as the origin, where the x-axis is perpendicular to the left and right surfaces of the rigid upper plate 01, the y-axis is perpendicular to the upper and lower surfaces of the rigid upper plate 01, and the z-axis is perpendicular to the rigid upper plate 01. front and back.
  • the rigid bottom plate 04 (fixedly connected to the frame), when the external force F acts on the midpoint of the right side of the rigid upper plate 01 along the x-axis, the rigid upper plate 01 is displaced relative to the rigid bottom plate 04 along the x-axis direction and the y-axis direction , where the displacement in the y-axis direction is much smaller than the displacement in the x-axis direction, which is generally ignored.
  • the parallelogram flexible hinge mechanism only produces displacement along the x-axis direction under the action of the F force.
  • the parallelogram flexible hinge mechanism is prone to parasitic displacement errors (small rotations along each coordinate axis and small movements along the y-axis and z-axis).
  • the displacement accuracy of the rigid upper plate 01 of the parallelogram flexible hinge mechanism along the x-axis direction under the action of the F force is very high.
  • the torsional stiffness of the rigid upper plate 01 around the y-axis is small.
  • the invention provides a micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device, which can simultaneously detect and correct the displacement error and rigidity of the rigid upper plate of the parallelogram flexible hinge mechanism along the x-axis direction under the action of F force. Parasitic corner error of the plate around the y-axis.
  • the technical solution adopted by the present invention to solve the technical problem is to provide a micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device, comprising a rigid upper plate, a rigid bottom plate and two rigid vertical plates, the rigid upper plate , A rigid bottom plate and two rigid vertical plates form a parallelogram structure through four flexible hinges, a substrate is fixed on the upper surface of the rigid bottom plate, an insulating layer is fixed on the substrate, and an insulating layer is arranged on the insulating layer.
  • the silicon wire groups include a number of silicon wires that are parallel to each other and have the same shape and size, and the distances between adjacent silicon wires are equal; the silicon wires are perpendicular to the front of the rigid bottom plate.
  • the lower surface of the rigid upper plate is provided with a scattering light source; when the laser light emitted by the scattering light source is irradiated on the silicon wire group, a near-field coupling effect occurs between the silicon wire and the substrate, and causes the silicon wire group to have a near-field coupling effect. of a silicon wire is completely inhibited.
  • the distance between adjacent silicon wires in the silicon wire group is one-fifth of the wavelength of the laser light.
  • the thickness of the insulating layer is 15-20 nm.
  • the insulating layer is a transparent aluminum oxide isolation layer.
  • the substrate is a silver matrix in the shape of a rectangular parallelepiped.
  • each silicon wire group is connected to the processor through the lead-out wire, and the processor reads the potential of each silicon wire according to the lead-out wire, and determines the corresponding minimum potential difference in the wire group according to the potential value of the silicon wire. position variation information of the silicon wire, and perform displacement compensation for the driver that pushes the rigid upper board according to the position variation information.
  • the present invention has the following advantages and positive effects due to the adoption of the above-mentioned technical solution: the present invention can simultaneously detect and correct the rigid upper plate of the parallelogram flexible hinge mechanism along the x-axis direction under the action of F force The resulting displacement error and parasitic angle error around the y-axis of the rigid upper plate.
  • Fig. 1 is the structural representation of the micro-displacement mechanism in the prior art
  • FIG. 2 is a front view of an embodiment of the present invention
  • Figure 3 is a top view of an embodiment of the present invention.
  • Fig. 4 is a sectional view along line A-A in Fig. 2;
  • FIG. 5 is a schematic diagram of the principle of laser detection based on non-Hermitian coupling specific frequency in an embodiment of the present invention
  • FIG. 6 is a schematic diagram of the principle of detecting the position of a point light source in an embodiment of the present invention.
  • Embodiments of the present invention relate to a micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device, as shown in Figures 2-4, 11a, 11b, 11c and 11d are flexible hinges with the same structure, 12a and 12b are Rigid risers with the same structure, 13 is the rigid bottom plate, 14 is the right driver support, 15 is the rigid upper plate, 15a is the lower surface of the rigid upper plate, 15b is the right side of the rigid upper plate, 16 is the fixed The miniature scattering light source on the lower surface 15a of the rigid upper plate, 17a and 17b are the exact same x-direction piezoelectric ceramic actuators, 18a and 18b are the exact same piezoelectric ceramic actuator locking nuts, used for locking the x-direction piezoelectric ceramics respectively Ceramic drivers 17a and 17b; 19a, 19b, 19c and 19d are threaded holes, which are evenly distributed on the rigid upper plate 15 for external connection; 20a, 20b, 20c and 20d are
  • 23a and 23b are two identical sets of mutually parallel wires composed of several pairs of silicon wires, wherein each silicon wire has the same shape and size, and the distance between adjacent silicon wires is equal, and the silicon wires are perpendicular to the The front and rear of the rigid bottom plate 13 .
  • 24 is a transparent aluminum oxide isolation layer (insulating layer) with a certain thickness, and the silicon wire group is fixed on the insulating layer 24 .
  • 25 is a silver substrate, and the insulating layer 24 is fixed on the silver substrate 25 .
  • the rigid upper plate 15 is a rectangular hexahedron, and a fixed three-dimensional rectangular coordinate system o-x-y-z is set with the geometric center o of the lower surface 15a of the rigid upper plate 15 as the origin (that is, the three-dimensional rectangular coordinate system o-x-y-z is stationary relative to the rigid bottom plate 13).
  • the right driver support 14 and the rigid bottom plate 13 are a rigid integral structure; the x-direction piezoelectric ceramic drivers 17a and 17b are installed in the right driver support 14, and the driving force of the piezoelectric ceramic drivers 17a and 17b acts on the rigid upper plate
  • the direction of the acting force and the position of the acting point of the two meet the following characteristics: the direction of the force is along the negative direction of the x-axis, the distance between the acting points of the force is B and is symmetrical with the origin, and the acting points of the two forces are The y-axis coordinate values are the same; both the piezoelectric ceramic drivers 17a and 17b can independently drive the rigid upper plate 15 to move along the negative x-axis direction.
  • each wire in the wire group in this embodiment is 60*100 nm, and the distance between the two wires in each wire group is 145 nm.
  • the wires are made of silicon material, which is buried in a silver substrate.
  • the light source wavelength range is 700-750nm.
  • on the SOI wafer first use electron beam lithography to etch silicon nanowires, then use ALD process to deposit an aluminum oxide isolation layer (15-20nm), and then use electron beam evaporation to deposit silver lining end.
  • the wavelength of the light source is 727 nm and the incident angle is 50°, complete suppression is achieved.
  • the piezoelectric ceramic drivers 17a and 17b synchronously drive the rigid upper plate 15 to produce displacement along the negative direction of the x-axis.
  • the position variation of the sensitive wires in the wire group 23a is ⁇ a
  • the wire group 23b is sensitive to If the position variation of the lead wire is ⁇ b , it can be known that the actual displacement of the center of the rigid upper plate 15 along the negative direction of the x-axis Parasitic corner error of rigid upper plate 15 around the y-axis
  • the piezoelectric ceramic actuators 17a and 17b are controlled to generate an appropriate compensation displacement, which can eliminate or reduce the displacement error generated by the center of the rigid upper plate 15 along the negative direction of the x-axis and Parasitic corner error around the y-axis.
  • 1 and 2 are parallel wires made of silicon material
  • L1 is a laser parallel beam that is vertically shot to wire 1 and wire 2 in space
  • L2 is the projection of L1 onto the plane where wire 1 and wire 2 are located.
  • Line, ⁇ is the incident angle (the acute angle between the laser parallel beam L1 and the normal line of the plane where the wire 1 and wire 2 are located)
  • 7 is the transparent aluminum oxide isolation layer (insulating layer) with a certain thickness
  • 8 is the silver lining end.
  • the wire 1 and the wire 2 are fixed on the transparent aluminum oxide isolation layer 7
  • the transparent aluminum oxide isolation layer 7 is fixedly connected with the silver substrate 8 .
  • 3 and 4 are lead wires fixedly connected to both ends of lead 1 and lead 2
  • 5 and 6 are potentiometers, and the potential difference at both ends of lead 1 and lead 2 can be measured through lead lead 3 and lead lead 4 respectively.
  • the silicon wire When the laser irradiates a single silicon wire, the silicon wire is illuminated, and a potential difference is generated across the silicon wire.
  • a light beam L1 of a specific wavelength eg, the wavelength range of the light source is 700-750 nm
  • the distance between the wire 1 and the wire 2 and the thickness of the aluminum oxide isolation layer 7 are appropriate (eg, between the wire 1 and the wire 2)
  • the two parallel wires 1 and 2 and the silver substrate 8 in this case form a resonator together.
  • the potential difference between the two ends of wire 1 and wire 2 is related to the incident angle ⁇ .
  • the incident angle ⁇ 0 the resonator amplitude is completely suppressed, that is, the resonator is close to the light source.
  • the potential difference between the two ends of the wire 1 tends to zero, while the potential difference between the two ends of the wire 2 which is far from the light source does not change significantly.
  • the laser incident angle ⁇ 0 at this position is called the coupling incident angle.
  • the potential difference ratio reaches an extreme value. According to this principle, the value of ⁇ 0 can be accurately measured.
  • 1a is a wire group consisting of several pairs of silicon wires that are parallel to each other. The distance between each adjacent pair of silicon wires is certain, and 7a has a certain Thick transparent aluminum oxide isolation layer (insulation layer), 8a is a silver substrate, the size of the wire group 1a, the insulating layer 7 and the silver substrate 8a are appropriately set so that each pair of silicon wires in the wire group 1a conforms to the above-mentioned non-Hermitian coupling.
  • insulation layer Thick transparent aluminum oxide isolation layer
  • S is a scattered light source that can emit light of a specific frequency
  • ⁇ 0 is the coupling incident angle
  • the wire A irradiated by the incident angle is the coupling incident angle ⁇ 0 appears dark, and the potential difference between its two ends is close to zero (called this Wire A is the sensitive wire), so the position in the wire group can be easily detected.
  • the Cartesian coordinate system oxy is set as shown in Figure 6, where the x-axis is parallel to the upper surface of the wire group. Obviously, in the Cartesian coordinate system oxy, if point S moves ⁇ along the x-axis direction, then point A also moves synchronously along the x-axis direction ⁇ .
  • the micro-displacement mechanism of this embodiment can simultaneously detect and correct the displacement error of the rigid upper plate of the parallelogram flexible hinge mechanism along the x-axis direction under the action of the F force and the displacement error of the rigid upper plate around the y-axis. parasitic corner error.

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  • Length Measuring Devices By Optical Means (AREA)
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Abstract

本发明涉及一种带有非厄米耦合角度检测纠正装置的微位移机构，其中刚性底板的上表面固定有衬底，所述衬底上固设有一层绝缘层，所述绝缘层上设置有两组完全相同的硅导线组，所述硅导线组包括若干根相互平行且形状尺寸相同的硅导线，且相邻的硅导线之间距离相等；所述硅导线垂直于所述刚性底板的前后面；所述刚性上板的下表面设置有散射光源；所述散射光源发出的激光照射硅导线组上时，所述硅导线与衬底之间发生近场耦效应，并使得硅导线组中的一根硅导线完全抑制。本发明能够同步检测与纠正平行四边形柔性铰链构机构刚性上板在F力作用下沿x轴方向产生的位移误差以及刚性上板绕y轴的寄生转角误差。

Description

一种带有非厄米耦合角度检测纠正装置的微位移机构 技术领域
本发明涉及微纳光子器件及微位移测量技术领域，特别是涉及一种带有非厄米耦合角度检测纠正装置的微位移机构。
背景技术
平行四边形柔性铰链构机构是一种用途非常广泛微位移机构。由于存在难以避免的制造误差、位移作用力方向和作用点位置的偏差等，使得平行四边形柔性铰链构机构容易产生寄生位移误差。典型的平行四边形柔性铰链构机构如图1所示：图中01是刚性上板，02是柔性铰链，03是刚性竖板，04是刚性底板；刚性上板01、刚性底板04、2块刚性竖板03以及4个柔性铰链组成平行四边形柔性铰链构机构，其中，刚性上板01与刚性底板04全等且相互平行，左右2块刚性竖板03全等且相互平行，4个柔性铰链全等。以刚性上板01几何中心为原点建立固定直角坐标系o-x-y-z，其中x轴垂直于刚性上板01的左右面，y轴垂直于刚性上板01的上下面，z轴垂直于刚性上板01的前后面。固定刚性底板04(与机架固联)，当外力F沿x轴作用在刚性上板01右侧面中点时，刚性上板01相对于刚性底板04沿x轴方向和y轴方向产生位移，其中，y轴方向产生位移远小于x轴方向产生位移，一般忽略不计。
理论上平行四边形柔性铰链构机构在F力作用下只产生沿x轴方向的位移，实际制造和使用过程中，由于存在难以避免的制造误差、位移作用力方向和作用点位置的偏差等，使得平行四边形柔性铰链构机构容易产生寄生位移误差(沿各座标轴的微小转动和沿y轴、z轴的微小移动)。实际应用中，对平行四边形柔性铰链构机构刚性上板01在F力作用下沿x轴方向产生的位移精确度要求很高，除此以外，由于刚性上板01绕y轴的扭转刚度较小，对刚性上板01绕y轴的寄生转角误差(绕y轴的微小转动)往往也有控制要求。
发明内容
本发明提供一种带有非厄米耦合角度检测纠正装置的微位移机构，能够同步检测与纠正平行四边形柔性铰链构机构刚性上板在F力作用下沿x轴方向产生的位移误差以及刚性上板绕y轴的寄生转角误差。
本发明解决其技术问题所采用的技术方案是：提供一种带有非厄米耦合角度检测纠正装置的微位移机构，包括刚性上板、刚性底板和两块刚性竖板，所述刚性上板、刚性底板 和两块刚性竖板通过四个柔性铰链构成平行四边形结构，所述刚性底板的上表面固定有衬底，所述衬底上固设有一层绝缘层，所述绝缘层上设置有两组完全相同的硅导线组，所述硅导线组包括若干根相互平行且形状尺寸相同的硅导线，且相邻的硅导线之间距离相等；所述硅导线垂直于所述刚性底板的前后面；所述刚性上板的下表面设置有散射光源；所述散射光源发出的激光照射硅导线组上时，所述硅导线与衬底之间发生近场耦效应，并使得硅导线组中的一根硅导线完全抑制。
所述硅导线组中相邻的硅导线之间的距离为所述激光的波长的五分之一。
所述绝缘层的厚度为15-20nm。
所述绝缘层为透明氧化铝隔离层。
所述衬底为长方体形状的银基体。
所述每根硅导线组的两端通过引出导线与处理器相连，所述处理器根据引出导线读取每根硅导线的电位，并根据硅导线的电位值判断导线组中电位差最小值对应的硅导线的位置变动量信息，并根据所述位置变动量信息对推动所述刚性上板的驱动器进行位移补偿。
有益效果
由于采用了上述的技术方案，本发明与现有技术相比，具有以下的优点和积极效果：本发明能够同步检测与纠正平行四边形柔性铰链构机构刚性上板在F力作用下沿x轴方向产生的位移误差以及刚性上板绕y轴的寄生转角误差。
附图说明
图1是现有技术中微位移机构的结构示意图；
图2是本发明实施方式的主视图；
图3是本发明实施方式的俯视图；
图4是沿图2中A-A线的剖视图；
图5是本发明实施方式中基于非厄米耦合特定频率激光探测原理示意图；
图6是本发明实施方式中点光源位置探测原理示意图。
具体实施方式
下面结合具体实施例，进一步阐述本发明。应理解，这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解，在阅读了本发明讲授的内容之后，本领域技术人员可以对本发明作各种改动或修改，这些等价形式同样落于本申请所附权利要求书所限定的范围。
本发明的实施方式涉及一种带有非厄米耦合角度检测纠正装置的微位移机构，如图2-4所示，11a、11b、11c以及11d是结构完全相同的柔性铰链，12a和12b是结构完全相同的刚性竖板，13是刚性底板，14是右侧驱动器支座，15是刚性上板，15a是刚性上板的下表面，15b是刚性上板的右侧面，16是固定在刚性上板下表面15a上的微型散射光源，17a和17b是完全相同的x向压电陶瓷驱动器，18a以及18b是完全相同的压电陶瓷驱动器锁紧螺母，分别用于锁紧x向压电陶瓷驱动器17a和17b；19a、19b、19c及19d是螺纹孔，均布在刚性上板15上，用于对外联接；20a、20b、20c及20d是螺纹孔，均布在刚性底板13上，用于对外联接。23a和23b分别是两组完全相同的由若干对硅导线组成的相互平行的导线组，其中每根硅导线形状尺寸相同，且相邻的硅导线之间距离相等，该硅导线垂直于所述刚性底板13的前后面。24是具有一定厚度的透明氧化铝隔离层(绝缘层)，硅导线组固定在绝缘层24上。25是银衬底，绝缘层24固定在银衬底25上。所述散射光源16发出的激光照射硅导线组23a和硅导线组23b上时，所述硅导线与银衬底25之间发生近场耦效应，并使得硅导线组23a和硅导线组23b中的一根硅导线完全抑制。
刚性上板15为矩形六面体，以刚性上板15下表面15a几何中心o为原点设置固定三维直角坐标系o-x-y-z(即三维直角坐标系o-x-y-z相对于刚性底板13静止不动)。右侧驱动器支座14与刚性底板13为一个刚性整体结构；x向压电陶瓷驱动器17a和17b安装在右侧驱动器支座14中，压电陶瓷驱动器17a和17b的驱动力作用在刚性上板右侧面15b上，两者的作用力方向及作用点位置符合以下特征：力的方向沿x轴负方向，力的作用点之间距离为B并与原点对称，且两个力的作用点y轴座标值相同；压电陶瓷驱动器17a和17b均可独立沿x轴负方向驱动刚性上板15移动。
本实施方式的导线组中每根导线截面为60*100nm，每组导线组内的两根导线之间间距145nm。导线是硅材料制成，其埋在银衬底里。光源波长范围700-750nm。采用常规加工方法，在SOI片上，先用电子束光刻，刻蚀出硅纳米线，然后用ALD工艺沉积一层氧化铝隔离层(15-20nm)，然后再用电子束蒸发，沉积银衬底。当光源波长727nm，入射角度为50°时，达到完全抑制。
工作时，压电陶瓷驱动器驱动刚性上板15移动的理论值与实际值之间往往会有误差。设压电陶瓷驱动器17a和17b同步驱动刚性上板15沿x轴负方向产生了位移，此时在微型散射光源19照射下，导线组23a中敏感导线位置变动量为Δ a，导线组23b敏感导线位置变动量为Δ b，则可知刚性上板15中心沿x轴负方向产生的实际位移量
Figure PCTCN2020133054-appb-000001
刚性 上板15绕y轴的寄生转角误差
Figure PCTCN2020133054-appb-000002
根据导线组23a和导线组23b中敏感导线位置变动量信息，控制压电陶瓷驱动器17a和17b产生适当的补偿位移，可消除或减小刚性上板15中心沿x轴负方向产生的位移误差以及绕y轴的寄生转角误差。
本实施方式的检测原理是基于非厄米耦合特定频率激光探测原理实现的。图5中，1和2是硅材料制成的相互平行的导线，L1是空间垂直射向导线1和导线2的激光平行光束，L2是L1向导线1和导线2所在平面上投影得到的投影线，θ是入射角(激光平行光束L1与导线1和导线2所在平面的法线之间所夹的锐角)，7是具有一定厚度的透明氧化铝隔离层(绝缘层)，8是银衬底。导线1和导线2固连在透明氧化铝隔离层7上，透明氧化铝隔离层7与银衬底8固连。3和4是固连在导线1和导线2两端的引出导线，5和6是电位计，可以通过引出导线3和引出导线4分别测出导线1和导线2两端的电位差。
当激光照射到单根硅导线时，硅导线会被照亮，同时硅导线两端产生电位差。在图5中，对于特定波长的光束L1(如：光源波长范围700-750nm)，若导线1和导线2之间的距离以及氧化铝隔离层7厚度恰当(如：导线1和导线2之间的距离为光波长五分之一，氧化铝隔离层7厚度15-20nm)时，此种情况下的两个相互平行的导线1和导线2以及银衬底8一起构成了一个谐振器，在光束L1照射下，导线1、导线2与银衬底8之间会发生近场耦效应，此时导线1和导线2的亮度以及两端的电位差会发生改变。根据耦合模理论，导线1和导线2两端的电位差与入射角θ相关，特别是，通过精心设计参数，可以实现某一入射角度θ 0下，谐振器振幅完全抑制，即距离光源较近的导线1两端电位差趋向于零，而距离光源较远的导线2两端电位差没有明显变化，将该位置的激光入射角θ 0称为耦合入射角。为了提高检测灵敏度，可以根据导线1和导线2两端的电位差比值来判断光线入射角是否为耦合入射角θ 0：则当光线入射角为耦合入射角θ 0时，导线1和导线2两端的电位差比值达到极值。根据这个原理，可以精确测出θ 0的值。
基于上述原理，一种点光源位置探测原理如图6所示，图中，1a是由若干对硅导线组成的相互平行的导线组，每相邻对硅导线之间距离一定，7a是具有一定厚度的透明氧化铝隔离层(绝缘层)，8a是银衬底，恰当设置导线组1a、绝缘层7以及银衬底8a尺寸，使得导线组1a中每对硅导线均符合上述非厄米耦合现象发生的条件；S是能够发出特定频率光的散射光源，θ 0为耦合入射角，被入射角为耦合入射角θ 0照射的导线A呈现暗色，其两端电位差接近于零(称此导线A为敏感导线)，因此在导线组中的位置很容易被检测出。设 置直角坐标系oxy如图6所示，其中x轴与导线组上表面平行，显然，在直角坐标系oxy中，若S点沿x轴方向移动Δ，则A点沿x轴方向也同步移动Δ。由此可见，基于该原理，本实施方式的微位移机构能够能够同步检测与纠正平行四边形柔性铰链构机构刚性上板在F力作用下沿x轴方向产生的位移误差以及刚性上板绕y轴的寄生转角误差。

Claims (6)

  1. 一种带有非厄米耦合角度检测纠正装置的微位移机构，包括刚性上板、刚性底板和两块刚性竖板，所述刚性上板、刚性底板和两块刚性竖板通过四个柔性铰链构成平行四边形结构，其特征在于，所述刚性底板的上表面固定有衬底，所述衬底上固设有一层绝缘层，所述绝缘层上设置有两组完全相同的硅导线组，所述硅导线组包括若干根相互平行且形状尺寸相同的硅导线，且相邻的硅导线之间距离相等；所述硅导线垂直于所述刚性底板的前后面；所述刚性上板的下表面设置有散射光源；所述散射光源发出的激光照射硅导线组上时，所述硅导线与衬底之间发生近场耦效应，并使得硅导线组中的一根硅导线完全抑制。
  2. 根据权利要求1所述的带有非厄米耦合角度检测纠正装置的微位移机构，其特征在于，所述硅导线组中相邻的硅导线之间的距离为所述激光的波长的五分之一。
  3. 根据权利要求1所述的带有非厄米耦合角度检测纠正装置的微位移机构，其特征在于，所述绝缘层的厚度为15-20nm。
  4. 根据权利要求1所述的带有非厄米耦合角度检测纠正装置的微位移机构，其特征在于，所述绝缘层为透明氧化铝隔离层。
  5. 根据权利要求1所述的带有非厄米耦合角度检测纠正装置的微位移机构，其特征在于，所述衬底为长方体形状的银基体。
  6. 根据权利要求1所述的带有非厄米耦合角度检测纠正装置的微位移机构，其特征在于，所述每根硅导线组的两端通过引出导线与处理器相连，所述处理器根据引出导线读取每根硅导线的电位，并根据硅导线的电位值判断导线组中电位差最小值对应的硅导线的位置变动量信息，并根据所述位置变动量信息对推动所述刚性上板的驱动器进行位移补偿。
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