WO2022104908A1 - 一种对特定方向激光光束敏感的微纳结构 - Google Patents

一种对特定方向激光光束敏感的微纳结构 Download PDF

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WO2022104908A1
WO2022104908A1 PCT/CN2020/133056 CN2020133056W WO2022104908A1 WO 2022104908 A1 WO2022104908 A1 WO 2022104908A1 CN 2020133056 W CN2020133056 W CN 2020133056W WO 2022104908 A1 WO2022104908 A1 WO 2022104908A1
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silicon
micro
silicon wire
specific direction
laser
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French (fr)
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黄海阳
赵瑛璇
仇超
盛振
甘甫烷
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中国科学院上海微系统与信息技术研究所
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Priority to US18/037,088 priority Critical patent/US20240004130A1/en
Publication of WO2022104908A1 publication Critical patent/WO2022104908A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12061—Silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12138—Sensor

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  • the invention relates to the technical field of micro-nano photonic devices and micro-systems, in particular to a micro-nano structure sensitive to a laser beam in a specific direction.
  • the technical problem to be solved by the present invention is to provide a micro-nano structure sensitive to a laser beam in a specific direction, which can accurately detect a laser signal at a specific angle and perform non-contact signal transmission along a specific direction.
  • the technical solution adopted by the present invention to solve the technical problem is to provide a micro-nano structure sensitive to a laser beam in a specific direction, including a substrate, an insulating layer is fixed on the substrate, and an insulating layer is arranged on the insulating layer.
  • Two parallel silicon wires with the same shape and size, each silicon wire has a lead wire at both ends and is connected to a potentiometer.
  • the distance between the two silicon wires is one fifth of the wavelength of the laser light.
  • the thickness of the insulating layer is 15-20 nm.
  • the insulating layer is a transparent aluminum oxide isolation layer.
  • the substrate is a silver matrix in the shape of a rectangular parallelepiped.
  • the present invention has the following advantages and positive effects due to the adoption of the above-mentioned technical solution: the present invention can be used in the micro-nano scale space to accurately detect a laser signal at a specific angle and to detect the laser signal along a specific angle.
  • This structure has the advantages of magnetic field resistance, low delay, strong confidentiality, and low energy consumption.
  • FIG. 1 is a schematic diagram of an embodiment of the present invention
  • FIG. 2 is a front view of an embodiment of the present invention
  • FIG. 3 is a plan view of an embodiment of the present invention.
  • An embodiment of the present invention relates to a micro-nano structure sensitive to a laser beam in a specific direction, as shown in FIG. 1 , including a substrate, an insulating layer is fixed on the substrate, and two insulating layers are arranged on the insulating layer
  • the silicon wires are parallel to each other and have the same shape and size. Both ends of each silicon wire are led out of wires and connected to the potentiometer.
  • the laser is irradiated to the silicon wire, a near-field coupling effect occurs between the silicon wire and the substrate, and the distance from the laser light source is relatively short. The closest silicon wire is completely suppressed, and the other silicon wire farther away from the laser source maintains the brightness.
  • 1 and 2 are parallel wires made of silicon material
  • L1 is a parallel laser beam directed to silicon wire 1 and silicon wire 2 vertically in space
  • L2 is a laser parallel beam L1 directed to silicon wire 1 and silicon wire 2
  • the projection line projected on the plane where it is located, ⁇ is the incident angle (the acute angle between the laser parallel beam L1 and the normal of the plane where the silicon wire 1 and the silicon wire 2 are located)
  • 7 is the transparent aluminum oxide isolation layer with a certain thickness (insulating layer)
  • 8 is a silver substrate.
  • the silicon wire 1 and the silicon wire 2 are fixedly connected to the isolation layer 7
  • the isolation layer 7 is fixedly connected to the silver substrate 8 .
  • 3 and 4 are the lead wires fixed at both ends of the silicon wire 1 and the silicon wire 2
  • 5 and 6 are potentiometers, and the potential at both ends of the silicon wire 1 and the silicon wire 2 can be measured through the lead wire 3 and the lead wire 4 respectively. Difference.
  • the silicon wire When the laser irradiates a single silicon wire, the silicon wire is illuminated, and a potential difference is generated across the silicon wire.
  • a laser parallel beam L1 of a specific wavelength eg, the wavelength range of the light source is 700-750 nm
  • the distance between the silicon wire 1 and the silicon wire 2 and the thickness of the aluminum oxide isolation layer 7 are appropriate (eg: the wire 1 and the When the distance between 2 is one-fifth of the wavelength of light, and the thickness of the aluminum oxide isolation layer 7 is 15-20 nm)
  • the two parallel silicon wires 1 and silicon wires 2 and the silver substrate 8 in this case together constitute a A resonator, under the irradiation of the laser parallel beam L1, a near-field coupling effect will occur between the silicon wire 1, the silicon wire 2 and the silver substrate 8.
  • the potential difference between the two ends of the silicon wire 1 and the silicon wire 2 is related to the incident angle ⁇ .
  • the resonator amplitude can be completely suppressed at a certain incident angle ⁇ 0 , that is, the distance from the light source is relatively short.
  • the potential difference between the two ends of the near silicon wire 1 tends to zero, while the potential difference between the two ends of the silicon wire 2 far from the light source does not change significantly.
  • the laser incident angle ⁇ 0 at this position is called the coupling incident angle.
  • whether the light incident angle is the coupling incident angle ⁇ 0 can be judged according to the ratio of the potential difference between the two ends of the silicon wire 1 and the silicon wire 2: then when the light incident angle is the coupling incident angle ⁇ 0 , the silicon wire 1 and the silicon wire The ratio of the potential difference across the wire 2 reaches an extreme value.
  • the structure can accurately detect the value of the coupling incident angle ⁇ 0 , and can also be used for non-contact reception of signals in a specific direction in a small space.
  • 13 is a silver substrate with a fixed position and a rectangular parallelepiped shape, and a layer of transparent aluminum oxide isolation layer (insulation layer) 12 with a certain thickness is fixed on the silver substrate 13.
  • the (insulation layer) 12 is fixedly provided with two silicon wires 11a and 11b that are parallel to each other and have the same shape and size. Both ends of the silicon wires 11a are provided with lead wires 14a according to the principle of FIG. 1 to measure the potential difference between the two ends of the wires. Both ends of the wire 11b are provided with lead wires 14b according to the principle of FIG. 1 so as to measure the potential difference between the two ends of the wire.
  • the structure of this embodiment can be processed by conventional photolithography technology.
  • the main parameters include: the cross section of a single silicon wire is 60*100nm, the center distance is 145nm, and the material of the base 13 is metallic silver.
  • the SOI wafer first use electron beam lithography to etch silicon nanowires, then use ALD process to deposit an aluminum oxide isolation layer (15-20nm), and then use electron beam evaporation, Deposition of silver substrates.
  • the silicon wire that is closer to the light source in the above structure can be completely suppressed (the silicon wire becomes dark, and the potential difference between the two ends is close to zero), while the other wire is farther away from the light source.
  • the silicon wire maintains a certain brightness and has a certain potential difference across it.
  • the structure has magnetic field resistance, low delay and confidentiality. strong and low energy consumption.

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Abstract

本发明涉及一种对特定方向激光光束敏感的微纳结构，包括衬底，所述衬底上固设有一层绝缘层，所述绝缘层上设置有两根相互平行且形状尺寸相同的硅导线，每根硅导线两端均引出导线与电位测量计相连，当激光照射到硅导线时硅导线与衬底之间发生近场耦效应，且距离激光光源较近的一根硅导线完全抑制，距离激光光源较远的另一根硅导线保持亮度。本发明能够对某个特定角度的激光信号进行精确探测以及沿特定方向上进行非接触信号传输。

Description

一种对特定方向激光光束敏感的微纳结构 技术领域
本发明涉及微纳光子器件及微系统技术领域，特别是涉及一种对特定方向激光光束敏感的微纳结构。
背景技术
在微纳米尺度的空间中，如何实现某个特定角度的精确探测以及沿特定方向上进行非接触信号传输等都存在诸多不便。随着光电子器件向微型化方向深入发展，微纳米尺度空间内的探测、测量以及信号传递等遇到了许多技术上的困难，相关产品的应用有广阔的市场空间。
发明内容
本发明所要解决的技术问题是提供一种对特定方向激光光束敏感的微纳结构，对某个特定角度的激光信号进行精确探测以及沿特定方向上进行非接触信号传输。
本发明解决其技术问题所采用的技术方案是：提供一种对特定方向激光光束敏感的微纳结构，包括衬底，所述衬底上固设有一层绝缘层，所述绝缘层上设置有两根相互平行且形状尺寸相同的硅导线，每根硅导线两端均引出导线与电位测量计相连，当激光照射到硅导线时硅导线与衬底之间发生近场耦效应，且距离激光光源较近的一根硅导线完全抑制，距离激光光源较远的另一根硅导线保持亮度。
所述两根硅导线之间的距离为所述激光的波长的五分之一。
所述绝缘层的厚度为15-20nm。
所述绝缘层为透明氧化铝隔离层。
所述衬底为长方体形状的银基体。
有益效果
由于采用了上述的技术方案，本发明与现有技术相比，具有以下的优点和积极效果：本发明可用在微纳米尺度空间范围内，对某个特定角度的激光信号进行精确探测以及沿特定方向上进行非接触信号传输等，该结构且具有耐磁场、低延迟、保密性强以及能耗低等优点。
附图说明
图1是本发明实施方式的原理图；
图2是本发明实施方式的主视图；
图3是本发明实施方式的俯视图。
具体实施方式
下面结合具体实施例，进一步阐述本发明。应理解，这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解，在阅读了本发明讲授的内容之后，本领域技术人员可以对本发明作各种改动或修改，这些等价形式同样落于本申请所附权利要求书所限定的范围。
本发明的实施方式涉及一种对特定方向激光光束敏感的微纳结构，如图1所示，包括衬底，所述衬底上固设有一层绝缘层，所述绝缘层上设置有两根相互平行且形状尺寸相同的硅导线，每根硅导线两端均引出导线与电位测量计相连，当激光照射到硅导线时硅导线与衬底之间发生近场耦效应，且距离激光光源较近的一根硅导线完全抑制，距离激光光源较远的另一根硅导线保持亮度。
图1中，1和2是硅材料制成的相互平行的导线，L1是空间垂直射向硅导线1和硅导线2的激光平行光束，L2是激光平行光束L1向硅导线1和硅导线2所在平面上投影得到的投影线，θ是入射角(激光平行光束L1与硅导线1和硅导线2所在平面的法线之间所夹的锐角)，7是具有一定厚度的透明氧化铝隔离层(绝缘层)，8是银衬底。硅导线1和硅导线2固连在隔离层7上，隔离层7与银衬底8固连。其中，3和4是固连在硅导线1和硅导线2两端的引出导线，5和6是电位计，可以通过引出导线3和引出导线4分别测出硅导线1和硅导线2两端的电位差。
当激光照射到单根硅导线时，硅导线会被照亮，同时硅导线两端产生电位差。在图1中，对于特定波长的激光平行光束L1(如：光源波长范围700-750nm)，若硅导线1和硅导线2之间的距离以及氧化铝隔离层7厚度恰当(如：导线1和2之间的距离为光波长五分之一，氧化铝隔离层7厚度15-20nm)时，此种情况下的两个相互平行的硅导线1和硅导线2以及银衬底8一起构成了一个谐振器，在激光平行光束L1照射下，硅导线1、硅导线2与银衬底8之间会发生近场耦效应，此时硅导线1和硅导线2的亮度以及两端的电位差会发生改变。根据耦合模理论，硅导线1和硅导线2两端的电位差与入射角θ相关，特别是，通过精心设计参数，可以实现某一入射角度θ 0下，谐振器振幅完全抑制，即距离光源较近的硅导线1两端电位差趋向于零，而距离光源较远的硅导线2两端电位差没有明显变化，将该位置的激光入射角θ 0称为耦合入射角。为了提高检测灵敏度，可以根据硅导线 1和硅导线2两端的电位差比值来判断光线入射角是否为耦合入射角θ 0：则当光线入射角为耦合入射角θ 0时，硅导线1和硅导线2两端的电位差比值达到极值。根据这个原理，该结构可以精确探测出耦合入射角θ 0的值，也可用于微小空间内非接触接收特定方向的信号。
在图2和图3中，13是位置固定的具有长方体形状的银基体，在银基体13上固设有一层具有一定厚度的透明氧化铝隔离层(绝缘层)12，在透明氧化铝隔离层(绝缘层)12上固定设置有2根相互平行且形状尺寸相同的硅导线11a和硅导线11b，硅导线11a的两端按照图1原理设置有引出导线14a以便测量导线两端电位差，硅导线11b的两端按照图1原理设置有引出导线14b以便测量导线两端电位差。
本实施方式的结构可采用常规光刻技术加工。主要参数包括：单根硅导线的截面60*100nm，中心间距145nm，基体13材料为金属银。采用常规的微纳米加工工艺，在SOI片上，先用电子束光刻，刻蚀出硅纳米线，然后用ALD工艺沉积一层氧化铝隔离层(15-20nm)，然后再用电子束蒸发，沉积银衬底。
当光源波长727nm，入射角度为50°时，上述结构中距离光源较近的硅导线可达到完全抑制(硅导线变暗，两端电位差接近于零)，而另一根距离光源较远的硅导线保持一定的亮度且两端有一定的电位差。
不难发现，本发明可用在微纳米尺度空间范围内，对某个特定角度的激光信号进行精确探测以及沿特定方向上进行非接触信号传输等，该结构且具有耐磁场、低延迟、保密性强以及能耗低等优点。

Claims (5)

  1. 一种对特定方向激光光束敏感的微纳结构，其特征在于，包括衬底，所述衬底上固设有一层绝缘层，所述绝缘层上设置有两根相互平行且形状尺寸相同的硅导线，每根硅导线两端均引出导线与电位测量计相连，当激光照射到硅导线时硅导线与衬底之间发生近场耦效应，且距离激光光源较近的一根硅导线完全抑制，距离激光光源较远的另一根硅导线保持亮度。
  2. 根据权利要求1所述的对特定方向激光光束敏感的微纳结构，其特征在于，所述两根硅导线之间的距离为所述激光的波长的五分之一。
  3. 根据权利要求1所述的对特定方向激光光束敏感的微纳结构，其特征在于，所述绝缘层的厚度为15-20nm。
  4. 根据权利要求1所述的对特定方向激光光束敏感的微纳结构，其特征在于，所述绝缘层为透明氧化铝隔离层。
  5. 根据权利要求1所述的对特定方向激光光束敏感的微纳结构，其特征在于，所述衬底为长方体形状的银基体。
PCT/CN2020/133056 2020-11-17 2020-12-01 一种对特定方向激光光束敏感的微纳结构 WO2022104908A1 (zh)

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