WO2022070969A1 - Agent de nettoyage pour substrat d'oxyde de gallium - Google Patents

Agent de nettoyage pour substrat d'oxyde de gallium Download PDF

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Publication number
WO2022070969A1
WO2022070969A1 PCT/JP2021/034212 JP2021034212W WO2022070969A1 WO 2022070969 A1 WO2022070969 A1 WO 2022070969A1 JP 2021034212 W JP2021034212 W JP 2021034212W WO 2022070969 A1 WO2022070969 A1 WO 2022070969A1
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Prior art keywords
polishing
cleaning
less
gallium oxide
cleaning agent
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PCT/JP2021/034212
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English (en)
Japanese (ja)
Inventor
佐知子 平子
直人 野口
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株式会社フジミインコーポレーテッド
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Publication of WO2022070969A1 publication Critical patent/WO2022070969A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/06—Dust extraction equipment on grinding or polishing machines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/88—Ampholytes; Electroneutral compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a cleaning agent, and more particularly to a cleaning agent for a gallium oxide substrate.
  • Materials for compound semiconductor substrates such as substrates for optical devices and substrates for power devices include, for example, oxides such as aluminum oxide (typically sapphire), silicon oxide, gallium oxide, and zirconium oxide, aluminum nitride, silicon nitride, and nitrides.
  • oxides such as aluminum oxide (typically sapphire), silicon oxide, gallium oxide, and zirconium oxide, aluminum nitride, silicon nitride, and nitrides.
  • Nitridees such as gallium and carbides such as silicon carbide are known.
  • These substrate materials are processed into a predetermined shape, the surface thereof is flattened and smoothed by polishing, and after being further washed, they are used as a substrate for a device. Examples of the technical documents disclosing the cleaning of the polished substrate include Patent Documents 1 to 3.
  • the gallium oxide substrate has advantages such as high durability and easy crystal growth as compared with a substrate made of other materials.
  • the gallium oxide substrate is still in the research stage, and it is required to establish a production technology for realizing a high quality gallium oxide substrate surface.
  • an object of the present invention is to provide a cleaning agent capable of exerting an excellent cleaning effect on a gallium oxide substrate after polishing.
  • a cleaning agent used for cleaning a gallium oxide substrate after polishing contains a surfactant.
  • the above-mentioned cleaning agent can exert an excellent cleaning effect on the gallium oxide substrate after polishing. By using the above-mentioned cleaning agent, it is possible to realize a gallium oxide substrate having high surface quality with few deposits.
  • the surfactant comprises an anionic surfactant.
  • a surfactant that exhibits excellent detergency on the gallium oxide substrate after polishing can be preferably selected from among anionic surfactants.
  • Examples of the surfactant preferably used in the technique disclosed herein include compounds having an oxyalkylene unit.
  • the concentration of the surfactant in the above-mentioned cleaning agent is preferably 10% by weight or more. By increasing the concentration of the surfactant, the effect of adding the surfactant can be better exhibited, and an excellent cleaning effect can be suitably exhibited.
  • the cleaning agent may contain water in addition to the surfactant. According to a cleaning agent containing water (which may be a cleaning liquid), the effect of the surfactant can be more exerted.
  • FIG. It is an AFM image of the substrate surface after cleaning with the cleaning agent which concerns on Example 1.
  • FIG. It is an AFM image of the substrate surface after cleaning with the cleaning agent which concerns on Example 2.
  • FIG. It is an AFM image of the substrate surface after cleaning with the cleaning agent which concerns on Example 3.
  • FIG. It is an AFM image of the substrate surface after cleaning with the cleaning agent which concerns on Example 4.
  • FIG. It is an AFM image of the substrate surface after cleaning with the cleaning agent which concerns on Comparative Example 1.
  • the cleaning agent disclosed herein is a cleaning agent used for cleaning a gallium oxide substrate after polishing, and is characterized by containing a surfactant. Cleaning with a cleaning agent containing a surfactant realizes an excellent cleaning effect on the gallium oxide substrate after polishing. Specifically, it is possible to remove deposits such as particles adhering to the surface of the substrate after polishing from the surface of the substrate while preventing surface roughness.
  • the surfactant used for the cleaning agent is not particularly limited, and any of anionic, cationic, nonionic, and amphoteric ones can be used.
  • a surfactant that exhibits excellent detergency on the surface of the gallium oxide substrate after polishing can be preferably selected from among anionic surfactants.
  • a nonionic surfactant is preferably used from the viewpoint of low foaming property and ease of pH adjustment.
  • the surfactant may be used alone or in combination of two or more.
  • anionic surfactants include alkane sulfonates, alkylbenzene sulfonates (eg nonylbenzene sulfonates, decylbenzene sulfonates, dodecylbenzene sulfonates, etc.), naphthalene sulfonates, alkyl sulphates, etc.
  • lauryl sulfate, octadecyl sulfate, etc. polyoxyalkylene sulfate, ⁇ -olefin sulfonate, ⁇ -sulfo fatty acid salt, ⁇ -sulfo fatty acid alkyl ester salt, alkyl sulfosuccinate, dialkyl sulfosuccinate, etc.
  • Sulfonic acid compounds alkyl sulfates, alkenyl sulfates, polyoxyalkylene alkyl ether sulfates (eg polyoxyethylene octadecyl ether sulfates, polyoxyethylene lauryl ether sulfates), polyoxyalkylene alkenyl ether sulfates
  • Sulfonic acid ester compounds such as: alkyl ether carboxylates, amide ether carboxylates, sulfosuccinates, carboxylic acid compounds such as amino acid surfactants; phosphoric acids such as alkyl phosphate ester salts and alkyl ether phosphate ester salts. Ester compounds; and the like.
  • the salt may be, for example, a metal salt such as a sodium salt, a potassium salt, a calcium salt or a magnesium salt (preferably a monovalent metal salt), an ammonium salt or an amine salt. And so on.
  • the anionic surfactant may be used alone or in combination of two or more.
  • nonionic surfactants are oxyalkylene polymers such as polyethylene glycol, polypropylene glycol and polytetramethylene glycol; polyoxyethylene alkyl ethers, polyoxyethylene alkyl phenyl ethers, polyoxyethylene alkyl amines and polyoxyethylene fatty acids.
  • Polyoxyalkylene derivatives such as esters, polyoxyethylene glyceryl ether fatty acid esters, polyoxyethylene sorbitan fatty acid esters (eg, polyoxyalkylene adducts); copolymers of multiple oxyalkylenes (eg, diblock type copolymers). , Triblock type copolymer, random type copolymer, alternate copolymer); and the like.
  • the nonionic surfactant may be used alone or in combination of two or more.
  • cationic surfactants are amine-type cationic surfactants such as alkylamidoamine and alkylamine; tetraalkyl (1 to 4 carbon atoms) ammonium salt (for example, tetramethylammonium salt), monolong-chain alkyl (carbon). Number 8-18) Tri-short chain alkyl (1 to 2 carbon atoms) ammonium salt (eg, lauryltrimethylammonium salt, palmityltrimethylammonium salt, stearyltrimethylammonium salt), dilong chain alkyl (8-18 carbon atoms) dishort Quaternary ammonium salt-type cationic surfactants such as chain alkyl (1 to 2 carbon atoms) ammonium salts; and the like.
  • amine-type cationic surfactants such as alkylamidoamine and alkylamine; tetraalkyl (1 to 4 carbon atoms) ammonium salt (for example, tetramethylammonium salt), monolong-chain alkyl
  • the salt may be, for example, a halide such as chlorine, bromine or iodine; a hydroxide; a sulfonic acid ester having 1 to 5 carbon atoms, a sulfate ester, a nitrate ester or the like.
  • a quaternary ammonium salt-type cationic surfactant preferably a mono-long-chain alkyltri short-chain alkylammonium salt, a di-long-chain alkyldi-short-chain alkylammonium salt, etc.
  • the cationic surfactant may be used alone or in combination of two or more.
  • amphoteric surfactant is not particularly limited, and examples thereof include an amine alkylene oxide type surfactant and an amine oxide type surfactant. These can be used alone or in combination of two or more.
  • the surfactant used in some preferred embodiments can be a compound having an oxyalkylene unit. Typically, it can be a compound having a polyoxyalkylene structure.
  • the oxyalkylene unit may be composed of one oxyalkylene group or may have a repeating structure of two or more oxyalkylene units. Examples of the oxyalkylene unit include an oxyethylene unit (EO) and an oxypropylene unit (PO). Of these, the oxyethylene unit (EO) is preferable.
  • the oxyalkylene units may be of the same type (that is, one type) or may be composed of two or more types of oxyalkylene units.
  • the total number of moles of alkylene oxide contained in the surfactant may be 1 or more, 3 or more, 5 or more, 10 or more, 15 or more, 20 or more, and also. It may be 50 or less, 30 or less, 22 or less, 16 or less, 12 or less, 8 or less, or 4 or less (for example, 3 or less).
  • the surfactant used in some embodiments has a hydrocarbon group.
  • the hydrocarbon group may be composed of a saturated hydrocarbon such as an alkyl group, or may contain an unsaturated bond such as a carbon-carbon double bond. Further, the hydrocarbon group (typically an alkyl group) may be linear or branched.
  • the hydrocarbon group (for example, an alkyl group) has 8 or more carbon atoms, 10 or more, 12 or more, 24 or less, 20 or less, and 18 or less. However, it may be 16 or less, or 12 or less.
  • hydrocarbon group typically, an alkyl group
  • hydrocarbon group typically, an alkyl group
  • examples of the hydrocarbon group include an octyl group, a decyl group, a lauryl group, a myristyl group, a palmityl group, a stearyl group and the like.
  • the pH of the surfactant (pH of 100% by weight of the surfactant or pH of the surfactant (which may contain an appropriate amount of water or the like) available as a product) is not particularly limited, and is not particularly limited, for example, 5. 9.0 or more is suitable, preferably 6.0 or more (for example, more than 6.0), 6.5 or more, 7.0 or more, 7.5 or more, 8. It may be more than 0 (for example, 8.2 or more).
  • the pH of the surfactant is preferably, for example, less than 11.0, preferably less than 9.5, more preferably less than 9.0 (eg, less than 9.0), and even less than 8.0. It may be less than 7.0, less than 6.0, or less than 5.0.
  • the above pH range is preferably applied to gallium oxide substrates having higher chemical reactivity than other compound semiconductor substrates such as sapphire substrates and silicon carbide substrates. It is considered that the surface roughness of the gallium oxide substrate can be prevented and good surface quality can be realized by performing cleaning using a surfactant in a region close to neutral.
  • the pH of a liquid surfactant or cleaning agent is a pH meter (for example, a glass electrode type hydrogen ion concentration indicator (model number F-23) manufactured by Horiba Seisakusho).
  • Standard buffer phthalate pH buffer pH: 4.01 (25 ° C), neutral phosphate pH buffer pH: 6.86 (25 ° C), carbonate pH buffer pH: 10. It can be grasped by calibrating at three points using 0.01 (25 ° C.)), putting the glass electrode in the cleaning agent to be measured, and measuring the value after it has stabilized after 2 minutes or more. ..
  • the concentration of the surfactant in the cleaning agent is appropriately set within the range in which the effect of containing the surfactant is exhibited, and is not limited to a specific range.
  • the concentration of the surfactant in the cleaning agent can be 0.01% by weight or more, and 0.1% by weight or more is suitable.
  • the surfactant concentration in the cleaning agent is 1% by weight or more, preferably 3% by weight or more, more preferably 10% by weight or more, still more preferably 20% by weight or more, and 30% by weight. % Or more, and 40% by weight or more (for example, 50% by weight or more) may be used.
  • the upper limit of the surfactant concentration in the cleaning agent can be less than 90% by weight, may be less than 70% by weight, may be less than 50% by weight, or may be less than 35% by weight.
  • a cleaning agent may be in the form of a cleaning liquid containing a surfactant and water.
  • the concentration of the surfactant in the cleaning agent can be approximately 90% by weight or more (eg 90-100% by weight), 95% by weight or more is appropriate, 99% by weight or more. May be.
  • Such cleaning agents may be substantially composed of a surfactant.
  • the cleaning agent comprises water in addition to the surfactant.
  • a cleaning agent can be a cleaning liquid that is liquid at room temperature. In this specification, room temperature means 23 ° C.
  • water used as the cleaning agent ion-exchanged water (deionized water), pure water, ultrapure water, distilled water and the like are suitable.
  • the cleaning agent disclosed herein may further contain an organic solvent (lower alcohol, lower ketone, etc.) that can be uniformly mixed with water, if necessary. It is preferable that 90% by volume or more of the solvent contained in the cleaning agent is water, and more preferably 95% by volume or more (for example, 99 to 100% by volume) is water.
  • the detergents disclosed herein are known and can be used as detergents such as chelating agents, pH regulators (acids, basic compounds, etc.), antioxidants, antifoaming agents, preservatives, antifungal agents, and the like. If necessary, one or more of the additives of the above may be further contained.
  • Examples of chelating agents include aminocarboxylic acid-based chelating agents and organic phosphonic acid-based chelating agents.
  • Examples of aminocarboxylic acid-based chelating agents include ethylenediamine tetraacetic acid, sodium ethylenediamine tetraacetate, nitrilotriacetic acid, sodium nitrilotriacetate, ammonium nitrilotriacetic acid, hydroxyethylethylenediamine triacetic acid, sodium hydroxyethylethylenediamine triacetate, and diethylenetriaminepentaacetic acid. , Diethylenetriamine pentaacetate sodium, triethylenetetramine hexaacetic acid and triethylenetetramine hexaacetate sodium.
  • organic phosphonic acid-based chelating agents examples include 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri (methylenephosphonic acid), ethylenediaminetetrakis (methylenephosphonic acid), and diethylenetriaminepenta (methylenephosphonic acid).
  • Etan-1,1-diphosphonic acid Etan-1,1,2-triphosphonic acid, Etan-1-hydroxy-1,1-diphosphonic acid, Etan-1-hydroxy-1,1,2-triphosphonic acid , Etan-1,2-dicarboxy-1,2-diphosphonic acid, methanehydroxyphosphonic acid, 2-phosphonobutane-1,2-dicarboxylic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid and ⁇ -methylphospho Contains nosuccinic acid.
  • the chelating agent may be used alone or in combination of two or more.
  • the cleaning agent disclosed here may be substantially free of a chelating agent.
  • the fact that the cleaning agent does not substantially contain the chelating agent means that the concentration of the chelating agent in the cleaning agent is less than 1% by weight.
  • the concentration of the chelating agent in the cleaning agent may be less than 0.3% by weight, less than 0.1% by weight, less than 0.01% by weight, or less than 0.005% by weight.
  • the technique disclosed herein can also be preferably carried out in an embodiment in which the cleaning agent does not contain a chelating agent.
  • the content of the above-mentioned optional additive can be set to an appropriate range in which the effect of the present invention is not significantly impaired.
  • the content of the optional additive in the cleaning agent is preferably less than 30% by weight, may be less than 10% by weight, may be less than 1% by weight, or may be less than 0.1% by weight. It may be less than 0.01% by weight.
  • the techniques disclosed herein are preferably carried out in a manner in which the cleaning agent does not contain any additives.
  • the optional additive is defined as a component different from a solvent such as water.
  • the amount of the optional additive used can also be specified by the relative relationship with the surfactant.
  • the content of the optional additive with respect to 1 part by weight of the surfactant can be less than 3 parts by weight, and it is appropriate that it is less than 1 part by weight.
  • the content of the optional additive with respect to 1 part by weight of the surfactant may be, for example, less than 0.3 parts by weight or less than 0.1 parts by weight. , Less than 0.03 parts by weight, or less than 0.01 parts by weight.
  • the content of the optional additive with respect to 1 part by weight of the surfactant can be 0.00001 parts by weight or more, 0.001 part by weight or more is appropriate, and 0. .1 part by weight or more, 0.5 parts by weight or more, or 1 part by weight or more.
  • the cleaning agent (which may be a cleaning liquid) is substantially composed of a surfactant and water.
  • cleaning agents may be in the form of an aqueous surfactant solution.
  • the total ratio of the surfactant and water in the cleaning agent is, for example, 90% by weight or more (for example, 90 to 100% by weight), preferably 95% by weight or more, and more preferably 99% by weight or more. be.
  • the effect of the surfactant tends to be more exerted.
  • the pH of the cleaning agents disclosed herein is not particularly limited.
  • the pH of the cleaning agent may be 0.5 or more, 1.0 or more, 2.0 or more, or 3.0 or more. It may be 0 or more.
  • the pH of the cleaning agent is preferably 5.0 or higher, preferably 6.0 or higher (eg, greater than 6.0), and may be 6.5 or higher, 7.0 or higher. However, it may be 7.5 or more, or 8.0 or more.
  • the pH of the cleaning agent may be, for example, 13.0 or less, 12.5 or less, 12.0 or less, or less than 12.0.
  • the pH of the cleaning agent is, for example, less than 11.0, preferably less than 9.5, more preferably less than 9.0 (eg, less than 9.0), and may be less than 8.0. , Less than 7.0, less than 6.0, less than 5.0.
  • the above pH range is preferably applied to gallium oxide substrates having higher chemical reactivity than other compound semiconductor substrates such as sapphire substrates and silicon carbide substrates. It is considered that the surface of the gallium oxide substrate can be prevented from being roughened and good surface quality can be achieved by performing cleaning using a cleaning agent in a region close to neutral.
  • the cleaning agent disclosed herein is used for cleaning a gallium oxide substrate after polishing.
  • the gallium oxide substrate to be cleaned is a substrate substantially made of gallium oxide (Ga 2 O 3 ), and is a substrate that has been subjected to a polishing treatment, which will be described in detail later.
  • the gallium oxide substrate can typically have a wafer shape. Therefore, it can be a gallium oxide wafer.
  • the gallium oxide substrate may contain an impurity element in addition to the gallium oxide single crystal.
  • This impurity element can be, for example, an element doped for controlling conductivity or the like.
  • the gallium oxide substrate may have a layer substantially made of gallium oxide formed on an appropriate base layer. Examples of such a base layer include a sapphire substrate, a silicon substrate, a SiC substrate and the like.
  • substantially composed of X or “substantially composed of X” with respect to the composition of the substrate means that the ratio of X to the substrate (purity of X) is based on the weight. It means that it is 90% or more (preferably 95% or more, more preferably 97% or more, still more preferably 98% or more, for example 99% or more).
  • the surface (polishing target surface) of the gallium oxide substrate may be a surface other than the (100) surface, for example, a (-201) surface, a (101) surface, or a (001) surface. ..
  • the Vickers hardness on the (-201) plane of the gallium oxide substrate is about 12.5 GPa
  • the Vickers hardness on the (101) plane is about 9.7 GPa.
  • a method for cleaning a gallium oxide substrate (a substrate to be cleaned, also simply referred to as a target substrate) is provided.
  • the cleaning method disclosed herein includes a step (cleaning step) of cleaning the gallium oxide substrate after polishing with a cleaning agent.
  • the cleaning agent the above-mentioned cleaning agent is used.
  • the cleaning method is not particularly limited, and can be carried out by an appropriate means according to the purpose. For example, one or more cleaning processes selected from immersion cleaning, spray cleaning, scrub cleaning, ultrasonic cleaning and the like may be employed. Scrub cleaning is preferable from the viewpoint of detergency.
  • scrub cleaning refers to cleaning in which the surface of the substrate is wiped or rubbed with a cleaning tool such as a sponge, a brush, or a non-woven fabric.
  • a cleaning tool such as a sponge, a brush, or a non-woven fabric.
  • particles and the like attached to the surface of a substrate by applying a cleaning agent to the surface of a cleaning tool such as a sponge, a brush, or a non-woven fabric, and moving the cleaning tool to which the cleaning agent is applied in contact with the surface of the substrate.
  • Detergents can be removed.
  • the cleaning step is preferably performed before the surface of the substrate after polishing is dried from the viewpoint of removing the adhered particles. It should be noted that the cleaning step disclosed herein can be preferably performed in a manner that does not include ultrasonic cleaning or microwave cleaning.
  • a sponge for example, polyvinyl alcohol (PVA) sponge
  • PVA polyvinyl alcohol
  • Such cleaning is also referred to as sponge cleaning.
  • water deionized water, pure water, ultrapure water, distilled water, etc.
  • organic solvent lower alcohol, lower ketone, etc.
  • the time of the cleaning step using the cleaning agent is not particularly limited, and is preferably 10 seconds or longer, preferably 30 seconds or longer, more preferably 1 minute or longer, from the viewpoint of particle removal property of the substrate surface. be. Further, from the viewpoint of cleaning efficiency, it is appropriate to set it to about 30 minutes or less, preferably 10 minutes or less, and more preferably 3 minutes or less (for example, 1 to 2 minutes).
  • the temperature of the cleaning agent in the cleaning step can usually be normal temperature (typically 10 ° C. or higher and lower than 40 ° C., for example, about 20 to 30 ° C.).
  • the cleaning agent may be heated (for example, heated to 40 ° C. or higher or 50 ° C. to 80 ° C.) for cleaning.
  • pre-cleaning is performed prior to the cleaning step using the cleaning agent.
  • the pre-cleaning is a cleaning that does not use the above-mentioned detergent, and for example, one or two or more selected from cleaning by immersion, cleaning by running water, cleaning by spray spraying, scrub cleaning, ultrasonic cleaning, and the like can be adopted.
  • immersion in water deionized water, pure water, ultrapure water, distilled water, etc.
  • running water cleaning water spray spray cleaning
  • water were used. It may be scrub cleaning, ultrasonic cleaning in a water tank containing water, or the like.
  • the immersion in water may be a batch immersion in which the substrate is immersed in a water tank in which water is stored, an overflow immersion performed while overflowing the water in the water tank, or a quick dump immersion.
  • Scrub cleaning is preferable from the viewpoint of detergency. Scrub cleaning with water is preferably carried out while supplying (running water) water to the substrate surface. As the scrub cleaning in the pre-cleaning, scrub cleaning using a sponge (for example, PVA sponge) is preferable. From the viewpoint of removing adhered particles, the pre-cleaning step is preferably performed before the surface of the substrate after polishing is dried, and the above-mentioned cleaning step is performed after the pre-cleaning step is completed and before the surface of the substrate is dried. Is preferable.
  • the above-mentioned water may contain an appropriate amount of an organic solvent (lower alcohol, lower ketone, etc.).
  • the time of the pre-cleaning step is not particularly limited, and from the viewpoint of detergency, it is appropriate to be 10 seconds or more, preferably 30 seconds or more. Further, from the viewpoint of cleaning efficiency, it is appropriate to set it to about 10 minutes or less, preferably 3 minutes or less (for example, 1 to 2 minutes).
  • post-cleaning is performed after the cleaning step using the cleaning agent. Since the post-cleaning can be performed by the same method as the pre-cleaning described above except that the post-cleaning is performed after the cleaning step, duplicate description will be omitted.
  • a method of combining running water cleaning and immersion cleaning for example, overflow immersion
  • the time of the post-cleaning step is preferably 1 minute or more, preferably 10 minutes or more (for example, about 10 to 30 minutes).
  • the cleaning method disclosed herein can achieve an excellent cleaning effect on a gallium oxide substrate by scrubbing with a surfactant and, in a preferred embodiment, with a sponge, and thus, as a whole, conventional cleaning. It can be preferably carried out in an embodiment that does not include ultrasonic cleaning or microwave cleaning, which are often used in the method.
  • the washed gallium oxide substrate is used as a semiconductor substrate material for various device applications such as optical devices and power devices after being naturally dried or forcibly dried using a dryer or the like.
  • a method for manufacturing a gallium oxide substrate including the above-mentioned cleaning method is provided.
  • the techniques disclosed herein may include a method of making a gallium oxide substrate and the provision of a gallium oxide substrate made by that method. That is, according to the technique disclosed herein, a method for manufacturing a gallium oxide substrate and the method including a cleaning step of supplying any of the cleaning agents disclosed herein to the gallium oxide substrate to clean the gallium oxide substrate.
  • the gallium oxide substrate manufactured by is provided. The manufacturing method can be carried out by preferably applying the contents of any of the cleaning methods disclosed herein.
  • the method for manufacturing a gallium oxide substrate may include a step (polishing step) of polishing the gallium oxide substrate to be polished before the cleaning step.
  • the polishing step is a step of polishing the surface of the gallium oxide substrate using a polishing composition described later.
  • the cleaning agent and cleaning method disclosed herein can be suitably used to achieve a desired effect by being applied to a gallium oxide substrate after polishing that has undergone a polishing step described later.
  • the cleaning agents and cleaning methods disclosed herein are preferably carried out in combination with polishing described below.
  • the polishing composition and the polishing method will be described.
  • the polishing composition for a gallium oxide substrate disclosed herein preferably contains abrasive grains. By polishing with such a polishing composition, it is possible to improve the polishing rate for the gallium oxide substrate and realize good surface quality.
  • the abrasive grains can be appropriately selected and used from among the abrasive grains that can be used for polishing other compound semiconductor substrates.
  • the abrasive grains include, for example, oxides of silicon oxide (silica), aluminum oxide (alumina), zirconium oxide, cerium oxide, titanium oxide, chromium oxide, magnesium oxide, manganese oxide, zinc oxide, iron oxide and the like; silicon nitride, Abrasive grains substantially composed of any of nitrides such as boron nitride; carbides such as silicon carbide and boron carbide; and the like can be mentioned.
  • the various abrasive grains described above can be used alone or in combination of two or more.
  • silica abrasive grains substantially made of silica and alumina abrasive grains substantially made of alumina are relatively easy to obtain and are suitable for polishing a gallium oxide substrate. It can be preferably used because it is easy to obtain good surface quality.
  • the technique disclosed herein is suitable for an embodiment containing a polishing composition containing silica particles. In polishing a gallium oxide substrate using silica particles, when the silica particles adhere to the surface of the substrate, the removal thereof is often not easy as compared with other particles. According to the technique disclosed herein, silica particles adhering to the surface of such a substrate can be preferably removed by using the above-mentioned cleaning agent.
  • silica abrasive grains examples include colloidal silica and dry method silica. Of these, the use of colloidal silica is preferred. With abrasive grains containing colloidal silica, high polishing rates and good surface quality can be suitably achieved.
  • colloidal silica here include silica manufactured using an alkali silicate-containing liquid containing an alkali metal such as Na and K and SiO 2 (for example, a sodium silicate-containing liquid) as a raw material, and tetraethoxy.
  • Silica (alkoxide method silica) produced by a hydrolysis condensation reaction of an alkoxysilane such as silane or tetramethoxysilane is included.
  • dry silica examples include silica (fumed silica) obtained by burning a silane compound such as silicon tetrachloride or trichlorosilane typically in a hydrogen flame, or the reaction between metallic silicon and oxygen. Includes silica to produce. These can be used alone or in combination of two or more.
  • the alumina abrasive grains include abrasive grains containing ⁇ -alumina, ⁇ -alumina, ⁇ -alumina, ⁇ -alumina and the like.
  • the alumina abrasive grains containing ⁇ -alumina as a main component can easily realize a high polishing rate.
  • the pregelatinization rate of alumina in the abrasive grains is preferably 20% or more, and more preferably 40% or more.
  • the pregelatinization rate of alumina in the alumina abrasive grains is obtained from the integrated intensity ratio of the (113) plane diffraction line by the X-ray diffraction measurement.
  • alumina called fumed alumina may be used based on the classification according to the production method.
  • alumina called colloidal alumina or alumina sol for example, alumina hydrate such as boehmite
  • colloidal alumina or alumina sol for example, alumina hydrate such as boehmite
  • surface-modified abrasive grains may be used.
  • the surface modification of the abrasive grains is performed by attaching or binding a substance having a potential different from that of the abrasive grains surface to the surface of the abrasive grains and changing the potential of the surface of the abrasive grains.
  • the substance used to change the potential of the surface of the abrasive grains but for example, when the abrasive grains are silica abrasive grains, a surfactant, an inorganic acid, an organic acid, alumina, etc.
  • Metal oxides can be used.
  • the average primary particle diameter DP1 of the abrasive grains in the polishing composition can be appropriately adjusted. As the average primary particle diameter DP1 of the abrasive grains increases, the polishing rate tends to improve. From such a viewpoint, the average primary particle diameter DP1 of the abrasive grains may be approximately 5 nm or more, 10 nm or more, 15 nm or more, or 18 nm or more. , 20 nm or more. Further, as the average primary particle diameter DP1 of the abrasive grains becomes smaller, it tends to be easier to obtain good surface quality.
  • the average primary particle diameter DP1 of the abrasive grains may be approximately 1000 nm or less, less than 1000 nm, 500 nm or less, or 200 nm or less. , 100 nm or less, or 90 nm or less.
  • the specific surface area can be measured, for example, by using a surface area measuring device manufactured by Micromeritex, trade name "Flow Sorb II 2300".
  • the average secondary particle diameter DP2 of the abrasive grains may be approximately 10 nm or more, 20 nm or more, 30 nm or more, or 40 nm or more. good.
  • the average secondary particle diameter DP2 of the abrasive grains may be approximately 5000 nm or less, 1000 nm or less, 500 nm or less, or 400 nm or less.
  • the average secondary particle diameter D P2 means a volume average particle diameter (volume average diameter D50) based on a dynamic light scattering method.
  • the average secondary particle diameter DP2 of the abrasive grains can be measured using a commercially available dynamic light scattering particle size analyzer, for example, using the model "UPA- UT151 " manufactured by Nikkiso Co., Ltd. or an equivalent product thereof. Can be measured.
  • the average secondary particle diameter D P2 of the abrasive grains is generally equal to or higher than the average primary particle diameter D P1 of the abrasive grains (D P2 / D P1 ⁇ 1), and is typically larger than D P1 (D).
  • P2 / D P1 > 1) is preferable.
  • the polishing rate tends to improve as the DP2 / DP1 of the abrasive grains increases.
  • the D P2 / D P1 of the abrasive grains may be 1.05 or more, 1.1 or more, 1.2 or more, and 1.3 or more. May be.
  • the D P2 / D P1 of the abrasive grains may be 10 or less, 5 or less, 3 or less, or 2.5 or less. It may be 2.3 or less, or 2.2 or less.
  • the shape (outer shape) of the abrasive grains may be spherical or non-spherical.
  • Specific examples of the non-spherical abrasive grains include a peanut shape (that is, a peanut shell shape), a cocoon shape, a konpeito shape, a rugby ball shape, and the like.
  • the polishing composition disclosed herein typically comprises water.
  • water ion-exchanged water (deionized water), pure water, ultrapure water, distilled water and the like can be preferably used.
  • the polishing composition disclosed herein may further contain an organic solvent (lower alcohol, lower ketone, etc.) that can be uniformly mixed with water, if necessary.
  • 90% by volume or more of the solvent contained in the polishing composition is preferably water, and 95% by volume or more (typically 99 to 100% by volume) is more preferably water.
  • the polishing composition disclosed herein may contain an acid.
  • the acids used include sulfuric acid, nitric acid, hydrochloric acid, chloric acid, bromic acid, phosphoric acid, phosphonic acid, phosphinic acid, boric acid and other inorganic acids; acetic acid, itaconic acid, succinic acid, tartrate acid, citric acid, maleic acid, etc.
  • examples thereof include organic acids such as glycolic acid, malonic acid, methanesulfonic acid, formic acid, malic acid, gluconic acid, alanine, glycine, lactic acid, trifluoroacetic acid and trifluoromethanesulfonic acid.
  • nitric acid, hydrochloric acid, chloric acid, bromic acid, and phosphoric acid can be preferably used.
  • various acids described above can be used alone or in combination of two or more. These acids can be used as a means of adjusting the pH of the polishing composition.
  • the polishing composition disclosed herein can be carried out in an embodiment containing at least one acid selected from the group consisting of nitric acid, hydrochloric acid, chloric acid and bromic acid as the acid. Further, the polishing composition disclosed herein can be carried out in an embodiment containing at least phosphoric acid as the acid.
  • the polishing composition disclosed here may contain an alkali.
  • the alkali used is an inorganic alkali compound derived from an alkali metal such as lithium hydroxide, sodium hydroxide, potassium hydroxide, lithium carbonate, sodium carbonate, potassium carbonate, lithium hydrogen carbonate, sodium hydrogen carbonate, potassium hydrogen carbonate, or ammonia.
  • Organic alkaline compounds such as amines can be used.
  • the above-mentioned various alkalis may be used alone or in combination of two or more. These alkalis can be used as a means for adjusting the pH of the polishing composition.
  • the pH of the polishing composition disclosed herein is not particularly limited.
  • the pH of the polishing composition may be 0.5 or higher, 1.0 or higher, 2.0 or higher, or 3.0 or higher. It may be 4.0 or more.
  • the polishing composition disclosed herein may also be preferably carried out in an embodiment having a pH of 5.0 or higher, 6.0 or higher or 6.5 or higher.
  • the pH of the polishing composition may be, for example, 13.0 or less, 12.5 or less, 12.0 or less, or less than 12.0.
  • the pH of the polishing composition may be, for example, less than 11.0, less than 9.5, less than 8.0, less than 7.0, less than 6.0. However, it may be less than 5.0.
  • the pH of the liquid composition is determined by using a pH meter (for example, a glass electrode type hydrogen ion concentration indicator (model number F-23) manufactured by Horiba Seisakusho). Used, standard buffer (phthalate pH buffer pH: 4.01 (25 ° C), neutral phosphate pH buffer pH: 6.86 (25 ° C), carbonate pH buffer pH: 10. It can be grasped by calibrating at three points using 01 (25 ° C.)), placing the glass electrode in the composition to be measured, and measuring the value after stabilizing after 2 minutes or more.
  • a pH meter for example, a glass electrode type hydrogen ion concentration indicator (model number F-23) manufactured by Horiba Seisakusho. Used, standard buffer (phthalate pH buffer pH: 4.01 (25 ° C), neutral phosphate pH buffer pH: 6.86 (25 ° C), carbonate pH buffer pH: 10. It can be grasped by calibrating at three points using 01 (25 ° C.)), placing the glass electrode in the composition to be measured, and measuring the value after stabilizing after
  • the pH of the polishing composition is preferably 4.0 or more and 12.0 or less, for example 4 or more and less than 12, and more preferably 4.0 or more and less than 12.0.
  • the polishing rate for the gallium oxide substrate can be more preferably improved, and good surface quality can be easily realized. ..
  • the reason why such an effect can be obtained is considered to be as follows, for example.
  • the gallium oxide substrate has higher chemical reactivity than other compound semiconductor substrates such as sapphire substrate and silicon carbide substrate, and is easily affected by the chemical properties of the polishing composition.
  • polishing when polishing is performed using a strongly acidic or strongly alkaline polishing composition, the surface of the substrate becomes rough, which causes deterioration of the smoothness of the surface of the substrate after polishing and generation of minute defects such as pits. It becomes.
  • a polishing composition having a pH adjusted to 4.0 or more and 12.0 or less it is possible to prevent surface roughness of the gallium oxide substrate and realize good surface quality. Conceivable. Further, by adjusting the pH of the polishing composition to 4.0 or more and 12.0 or less, aggregation of the abrasive grains is promoted, and a large number of secondary particles of the abrasive grains having a suitable particle size are formed.
  • Some preferred embodiments include an embodiment comprising at least one acid selected from the group consisting of nitric acid, hydrochloric acid, chloric acid and bromic acid and having a pH in any of the above ranges.
  • the pH of the polishing composition is preferably 0.5 or more and 12.0 or less, more preferably 0.5 or more and less than 8, for example 0.5 or more and less than 7.0.
  • any of the above-mentioned pHs can be preferably adopted.
  • the polishing composition disclosed herein requires additives such as a chelating agent, a thickener, a dispersant, a surface protective agent, a wetting agent, a surfactant, a rust preventive, a preservative, and an antifungal agent. It may be further contained depending on the circumstances.
  • the method for producing the polishing composition disclosed here is not particularly limited.
  • the mode in which these components are mixed is not particularly limited, and for example, all the components may be mixed at once, or may be mixed in an appropriately set order.
  • the polishing composition disclosed here may be a one-dosage form or a multi-dosage form including a two-dosage form.
  • a liquid A containing a part of the constituents of the polishing composition and a liquid B containing the remaining components may be mixed and used for polishing.
  • liquid A containing abrasive grains and various additives and liquid B containing a pH adjuster such as acid or alkali are separately prepared, and these are prepared so that the pH is 4.0 or more and less than 12.0. It is preferable to mix.
  • the polishing composition disclosed herein may be in a concentrated form (that is, in the form of a concentrated solution of the polishing solution) before being supplied to the gallium oxide substrate.
  • the polishing composition in such a concentrated form is advantageous from the viewpoint of convenience and cost reduction in manufacturing, distribution, storage and the like.
  • the concentration ratio can be, for example, about 1.2 times to 50 times in terms of volume.
  • the polishing composition in the form of a concentrated liquid as described above can be used in an embodiment in which a polishing liquid is prepared by diluting it at a desired timing and the polishing liquid is supplied to the gallium oxide substrate.
  • the dilution can be typically carried out by adding the above-mentioned solvent (for example, water) to the above-mentioned concentrate and mixing them.
  • the solvent is a mixed solvent, only some of the constituents of the solvent may be added and diluted, and a mixed solvent containing those constituents in an amount ratio different from that of the solvent is added. May be diluted.
  • a polishing solution may be prepared by diluting some of them and then mixing them with other agents, or mixing a plurality of agents and then diluting the mixture. You may prepare the polishing liquid.
  • the content of the abrasive grains in the polishing liquid may be approximately 1% by weight or more, 5% by weight or more, or 7.5% by weight or more. It may be 10% by weight or more.
  • the content of abrasive grains in the polishing liquid decreases, it tends to be easier to obtain good surface quality. From such a viewpoint, the content may be approximately 50% by weight or less, 45% by weight or less, 40% by weight or less, and 35% by weight or less. It may be 30% by weight or less (for example, 25% by weight or less).
  • a polishing and cleaning set used for polishing and cleaning a gallium oxide substrate.
  • This polishing and cleaning set includes a polishing composition and a cleaning agent.
  • the polishing composition is used for polishing a gallium oxide substrate, and the cleaning agent is used for cleaning a gallium oxide substrate after polishing using the polishing composition. More specifically, the polishing and cleaning set is used in a method for manufacturing a gallium oxide substrate.
  • the polishing composition the above-mentioned polishing composition disclosed herein is used.
  • the cleaning agent the above-mentioned cleaning agent disclosed herein is used.
  • the polishing composition may contain, for example, abrasive grains and water.
  • the above-mentioned cleaning agent contains a surfactant.
  • the polishing composition and the cleaning agent are typically stored separately from each other.
  • the gallium oxide substrate manufactured by using the above-mentioned polishing and cleaning set can have high surface quality after polishing and can have a clean surface after being cleaned.
  • the details of the polishing composition and the cleaning agent are as described above, and thus the description thereof will be omitted.
  • the polishing composition disclosed herein can be used for polishing a gallium oxide substrate, for example, in an embodiment including the following operations. That is, a polishing liquid containing any of the polishing compositions disclosed herein is prepared. Preparing the polishing liquid may include diluting the polishing composition. Alternatively, the above-mentioned polishing composition may be used as it is as a polishing liquid. Further, in the case of a multi-dosage type polishing composition, in order to prepare the above-mentioned polishing liquid, those agents are mixed, one or more agents are diluted before the mixing, and after the mixing. Diluting the mixture, etc. may be included.
  • the polishing liquid is supplied to the object to be polished, and polishing is performed by a conventional method.
  • an object to be polished is set in a general polishing device, and the polishing liquid is supplied to the surface of the object to be polished (the surface to be polished) through the polishing pad of the polishing device.
  • the polishing pad is pressed against the surface of the object to be polished to move them relatively (for example, rotational movement).
  • a polishing method for polishing a gallium oxide substrate and a method for manufacturing a gallium oxide substrate using the polishing method includes a step of polishing the surface of a gallium oxide substrate using the polishing composition disclosed herein.
  • the polishing method includes a rough polishing step (wrapping step) and a finish polishing step (polishing step).
  • the rough polishing step referred to here is a polishing step arranged before the finish polishing step, and is carried out in order to adjust the thickness of the gallium oxide substrate. For example, in this rough polishing step, polishing using a polishing composition containing diamond abrasive grains is performed.
  • the finish polishing step referred to here refers to a polishing step arranged at the end (that is, on the most downstream side) of the polishing step performed by using the polishing composition containing the abrasive grains.
  • the polishing method disclosed herein may include additional steps such as a cleaning step and a pre-polishing step before the rough polishing step and between the rough polishing step and the finish polishing step.
  • the cleaning step may be a cleaning method disclosed herein (a cleaning method using a cleaning agent containing a surfactant), or may be a conventionally known cleaning method.
  • the polishing composition disclosed herein can be particularly preferably used in a finish polishing step located at the end of the polishing step.
  • the above description is not limited to the use of the polishing composition disclosed herein in the finish polishing step. That is, the polishing composition disclosed herein may be used in the rough polishing step, or may be used in both the rough polishing step and the finish polishing step. Further, when a polishing step (for example, a preliminary polishing step) is arranged in addition to the rough polishing step and the finish polishing step, the polishing composition disclosed here can also be used for the other polishing steps.
  • the finish polishing process can be applied to both polishing with a single-sided polishing device and polishing with a double-sided polishing device.
  • the object to be polished (gallium oxide substrate) is attached to a ceramic plate with wax, or the object to be polished is held using a holder called a carrier, and one side of the object to be polished is supplied while supplying a polishing composition.
  • One side of the object to be polished is polished by pressing the polishing pad against the surface and moving the two relative to each other (for example, rotational movement).
  • a holder called a carrier is used to hold the object to be polished, and while supplying the polishing composition from above, the polishing pad is pressed against the facing surface of the object to be polished, and they are rotated in a relative direction. By doing so, both sides of the object to be polished are polished at the same time.
  • the polishing pad used in the finish polishing process is not particularly limited.
  • a flexible polyurethane foam type, a rigid polyurethane foam type, and a non-woven fabric type polishing pad can be used.
  • a flexible polyurethane foam type polishing pad can be preferably used.
  • the soft foamed polyurethane type polishing pad is a polishing pad in which at least the side pressed against the object to be polished is made of soft foamed polyurethane, and examples thereof include a suede type polishing pad.
  • a polishing pad having a shore A hardness of 60 or less can be preferably used.
  • the shore A hardness is a value measured using a rubber hardness tester (A type) conforming to JIS K6253 after the polishing pad is left at room temperature for 60 minutes or more in a dry state with a humidity of 20 to 60%.
  • aqueous solution containing the above-mentioned surfactant at a concentration of 27% is prepared by using polyoxyethylene laureth ether sodium sulfate (number of moles of ethylene oxide added: average 3, number of carbon atoms of alkyl group: 12 to 14) as the surfactant A. Obtained. This was used as a cleaning agent. The pH of this cleaning agent was 8.6.
  • a polyoxyethylene alkyl ether (ethylene oxide addition mole number: 9, alkyl group: isotridecyl group (carbon number 13)) was prepared and used as a detergent.
  • the pH of this cleaning agent was 6.6.
  • Alkyltrimethylammonium chloride (alkyl group: hexadecyl group, stearyl group (16 to 18 carbon atoms)) was used as the surfactant C to obtain an aqueous solution containing the above surfactant at a concentration of 28%. This was used as a cleaning agent. The pH of this cleaning agent was 7.1.
  • Example 4 As the surfactant D, sodium linear alkylbenzene sulfonate (alkyl group having 12 to 14 carbon atoms) was used to obtain an aqueous solution containing the above-mentioned surfactant at a concentration of 51%. This was used as a cleaning agent. The pH of this cleaning agent was 7.0.
  • the ⁇ gallium oxide substrate was polished using a polishing solution.
  • a polishing liquid a mixed liquid containing colloidal silica (average primary particle size: 35 nm) and deionized water having an abrasive grain concentration of 20% was prepared, and nitric acid was added to the mixed liquid to adjust the pH to 7.0.
  • the polishing liquid obtained in the above process was used.
  • a ⁇ -gallium oxide substrate (wafer) having a surface (polishing target surface) of 1.5 cm 2 was used, and the surface of this substrate was polished under the following polishing conditions.
  • Polishing equipment Single-sided polishing equipment manufactured by Nippon Engis Co., Ltd., model "EJ-380IN” Polishing load: 280 g / cm 2 Surface plate rotation speed: 60 rpm Head (carrier) rotation speed: 60 rpm Polishing pad: "SURFIN 019-3" manufactured by Fujimi Incorporated Co., Ltd.
  • Abrasive liquid supply rate 10 mL / min Abrasive liquid temperature: 20 ° C
  • AFM observation The surface of the ⁇ -gallium oxide substrate that had been air-dried overnight in a clean room was observed at three locations of 10 ⁇ m ⁇ 10 ⁇ m using AFM (Bruker, device model: Nanoscope V). As a result, no particles were confirmed to adhere to the surface of the ⁇ -gallium oxide substrate that was washed using the cleaning agents according to Examples 1 to 4.
  • the AFM images of the surface of the ⁇ -gallium oxide substrate after cleaning according to Examples 1 to 4 are shown in FIGS. 1 to 4, respectively.
  • FIG. 5 shows an AFM image of the surface of the ⁇ -gallium oxide substrate after cleaning according to Comparative Example 1.

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Abstract

L'invention fournit un agent de nettoyage qui permet de développer d'excellents effets de nettoyage vis-à-vis d'un substrat d'oxyde de gallium après meulage. Plus précisément, l'invention fournit un agent de nettoyage mis en œuvre dans le nettoyage d'un substrat d'oxyde de gallium après meulage. Cet agent de nettoyage contient un agent tensio-actif.
PCT/JP2021/034212 2020-09-30 2021-09-17 Agent de nettoyage pour substrat d'oxyde de gallium WO2022070969A1 (fr)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008105883A (ja) * 2006-10-24 2008-05-08 Nippon Light Metal Co Ltd 酸化ガリウム単結晶基板及びその製造方法
JP2008537343A (ja) * 2005-04-15 2008-09-11 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド マイクロエレクトロニクスデバイスからイオン注入フォトレジスト層をクリーニングするための配合物
JP2009124170A (ja) * 2003-10-20 2009-06-04 Air Products & Chemicals Inc 化学機械平坦化後の処理剤として使用される界面活性剤を含有するプロセス溶液
JP2010171362A (ja) * 2008-12-26 2010-08-05 Fujifilm Corp 半導体デバイス用洗浄剤及びそれを用いた半導体デバイスの製造方法
JP2012074678A (ja) * 2010-08-31 2012-04-12 Mitsubishi Chemicals Corp 半導体デバイス用基板洗浄液及び洗浄方法
WO2014077370A1 (fr) * 2012-11-16 2014-05-22 ライオン株式会社 Procédé de nettoyage ainsi que procédé de fabrication de substrat semi-conducteur
JP2014526153A (ja) * 2011-08-22 2014-10-02 イー．ケー．シー．テクノロジー．インコーポレーテッド 化学機械研磨後に基板をクリーニングするための組成物
JP2019117959A (ja) * 2011-05-18 2019-07-18 住友電気工業株式会社 エピタキシャル成長用の化合物半導体基板の製造方法、化合物半導体基板上のエピタキシャル成長方法および化合物半導体基板。

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009124170A (ja) * 2003-10-20 2009-06-04 Air Products & Chemicals Inc 化学機械平坦化後の処理剤として使用される界面活性剤を含有するプロセス溶液
JP2008537343A (ja) * 2005-04-15 2008-09-11 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド マイクロエレクトロニクスデバイスからイオン注入フォトレジスト層をクリーニングするための配合物
JP2008105883A (ja) * 2006-10-24 2008-05-08 Nippon Light Metal Co Ltd 酸化ガリウム単結晶基板及びその製造方法
JP2010171362A (ja) * 2008-12-26 2010-08-05 Fujifilm Corp 半導体デバイス用洗浄剤及びそれを用いた半導体デバイスの製造方法
JP2012074678A (ja) * 2010-08-31 2012-04-12 Mitsubishi Chemicals Corp 半導体デバイス用基板洗浄液及び洗浄方法
JP2019117959A (ja) * 2011-05-18 2019-07-18 住友電気工業株式会社 エピタキシャル成長用の化合物半導体基板の製造方法、化合物半導体基板上のエピタキシャル成長方法および化合物半導体基板。
JP2014526153A (ja) * 2011-08-22 2014-10-02 イー．ケー．シー．テクノロジー．インコーポレーテッド 化学機械研磨後に基板をクリーニングするための組成物
WO2014077370A1 (fr) * 2012-11-16 2014-05-22 ライオン株式会社 Procédé de nettoyage ainsi que procédé de fabrication de substrat semi-conducteur

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