WO2022052761A1 - Structure de dispositif semi-conducteur à fréquence radio et son procédé de fabrication - Google Patents

Structure de dispositif semi-conducteur à fréquence radio et son procédé de fabrication Download PDF

Info

Publication number
WO2022052761A1
WO2022052761A1 PCT/CN2021/113275 CN2021113275W WO2022052761A1 WO 2022052761 A1 WO2022052761 A1 WO 2022052761A1 CN 2021113275 W CN2021113275 W CN 2021113275W WO 2022052761 A1 WO2022052761 A1 WO 2022052761A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
radio frequency
microwave absorbing
microwave
semiconductor device
Prior art date
Application number
PCT/CN2021/113275
Other languages
English (en)
Chinese (zh)
Inventor
黄河
向阳辉
Original Assignee
中芯集成电路（宁波）有限公司上海分公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中芯集成电路（宁波）有限公司上海分公司 filed Critical 中芯集成电路（宁波）有限公司上海分公司
Publication of WO2022052761A1 publication Critical patent/WO2022052761A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI

Definitions

  • the invention relates to the field of semiconductor device manufacturing, in particular to a radio frequency semiconductor device structure and a manufacturing method thereof.
  • Integrated devices are typically formed on substrates in the form of wafers, which are primarily used as supports for the fabrication of the devices.
  • the upper surface and periphery of the integrated device are wrapped by a dielectric layer to isolate the micro-device units and interconnect lines that constitute the integrated device.
  • the processing frequency of radio frequency devices is between about 3kHz and 300GHz.
  • the signal between the two, its application is especially in the field of telecommunications.
  • the influence of electromagnetic coupling between a radio frequency device and a substrate, between adjacent radio frequency devices, and between a radio frequency device and other devices or interconnects on the device performance becomes more and more obvious with the increase of frequency.
  • the purpose of the present invention is to provide a semiconductor device structure and a manufacturing method thereof, which can solve the problem of electromagnetic coupling between radio frequency devices or between radio frequency devices and a substrate.
  • the present invention provides a radio frequency semiconductor device structure, including:
  • the first surface of the substrate is a semiconductor layer; the first radio frequency element is located in the semiconductor layer;
  • a dielectric layer located on the semiconductor layer and covering the first radio frequency element
  • the first microwave absorbing layer is arranged above the first radio frequency element; and/or the second microwave absorbing layer is arranged below the first radio frequency element; and/or the third microwave absorbing layer is arranged on the between adjacent first radio frequency components.
  • the present invention also provides a method for manufacturing a radio frequency semiconductor device structure, comprising:
  • first dielectric layer forming a first interconnect structure in the first dielectric layer, and connecting the first radio frequency components
  • a third microwave absorption layer is formed between the adjacent first radio frequency components.
  • a first microwave absorption layer is arranged above the first radio frequency element, and/or a second microwave absorption layer is arranged under the first radio frequency element, and/or a third microwave absorption layer is arranged between the first radio frequency elements.
  • the /second/third microwave absorption layer can absorb electromagnetic waves generated by the first radio frequency element from different directions, thereby reducing electromagnetic coupling between the first radio frequency element and other electronic devices or semiconductor materials.
  • the first microwave absorption layer is located between the first radio frequency element and the second radio frequency element, which can reduce the electromagnetic coupling generated between the first radio frequency element and the second radio frequency element.
  • the substrate layer is made of semiconductor material, and a second microwave absorption layer is arranged in the substrate layer, or a second microwave absorption layer is arranged on the back of the substrate layer, which can reduce the electromagnetic coupling between the first radio frequency element and the substrate layer, and reduce electromagnetic waves. radiation, reducing power loss.
  • the projection of the first/second microwave absorbing layer in the direction of the surface of the substrate layer surrounds the projection of the first radio frequency element in the direction of the surface of the substrate layer, which can reduce the amount of the first radio frequency element and other electronic devices or semiconductor materials to a greater extent. electromagnetic coupling between them.
  • the first/second/third microwave absorbing layer can be a single layer or a multi-layer, when it is a multi-layer, a better wave-absorbing effect can be achieved, and when it is a single-layer, the manufacturing process is convenient.
  • FIG. 1 shows a schematic diagram of the structure of a radio frequency semiconductor device according to Embodiment 1 of the present invention.
  • FIG. 2 to FIG. 8 are schematic diagrams of corresponding structures in different steps of the manufacturing method of the radio frequency semiconductor device structure according to Embodiment 2 of the present invention.
  • Embodiment 1 of the present invention provides a structure of a radio frequency semiconductor device.
  • FIG. 1 is a schematic diagram of the structure of a radio frequency semiconductor device according to Embodiment 1 of the present invention. Please refer to FIG. 1.
  • the structure of the radio frequency semiconductor device includes:
  • the first radio frequency element 10-1 is located in the semiconductor layer 22;
  • the dielectric layer 23 is located on the semiconductor layer 22 and covers the first radio frequency element 10-1;
  • the first microwave absorption layer 30-1 is disposed above the first radio frequency element 10-1; and/or the second microwave absorption layer 30-2 is disposed under the first radio frequency element 10-1; And/or, the third microwave absorption layer 30-3 is disposed between the adjacent first radio frequency elements 10-1.
  • the first microwave absorbing layer can cut off the electromagnetic coupling between the device and other devices on top of it and the interconnects; the second microwave absorbing layer can cut off the electromagnetic coupling between the device and the semiconductor substrate, and the third microwave absorbing layer can cut off the electromagnetic coupling between the devices effect.
  • the substrate includes a substrate layer 20, an insulating layer 21 and the semiconductor layer 22 stacked in sequence from bottom to top, such as an SOI substrate, that is, the material of the substrate layer 20 is silicon, and the material of the insulating layer 21 is oxide Silicon, the material of the semiconductor layer 22 is also silicon, and the semiconductor layer 22 is specifically monocrystalline silicon.
  • the material of the substrate layer 20 or the semiconductor layer 22 may also be other semiconductor materials, such as germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), Gallium Arsenide (GaAs), Indium Phosphide (InP) or other III/V compound semiconductors.
  • the substrate layer 20 may also be a non-semiconductor material, such as a ceramic substrate such as alumina, a quartz or glass substrate, and the like.
  • the material of the insulating layer 21 may also be other insulating materials commonly used in semiconductor processes, such as silicon nitride or silicon oxynitride.
  • the substrate may also have other structures, for example, the first surface is a semiconductor layer, and the bottom of the first surface is a dielectric layer.
  • the material of the substrate layer 20 is P-type silicon with a resistance value greater than 10KOhm.cm.
  • the reason for choosing a high resistance value is: when the first radio frequency component 10-1 above the substrate layer 20 is connected to an alternating current, the alternating current generates electromagnetic waves, and the electromagnetic waves radiate a part of the electric energy. Under certain conditions, the radiation loss increases, and the use of high-resistance materials can reduce electromagnetic wave radiation and reduce power loss.
  • the first radio frequency element 10 - 1 is formed in the semiconductor layer 22 .
  • the lower half of the first radio frequency element 10-1 is located in the semiconductor layer 22, and the upper half of the first radio frequency element 10-1 is located in the dielectric layer 23, that is, the dielectric layer 23 is located in the semiconductor layer 22. , cover the first radio frequency element 10-1.
  • the first radio frequency components may all be located in the semiconductor layer.
  • the material of the dielectric layer 23 includes one or more combinations of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3) and aluminum nitride (AlN).
  • the first radio frequency component 10-1 includes at least one of a diode, a triode, and a MOS transistor.
  • the first radio frequency element 10 - 1 is a MOS transistor, the source and drain of the MOS transistor are located in the semiconductor layer 22 , and the gate of the MOS transistor is located in the dielectric layer 23 above the semiconductor layer 22 .
  • the first radio frequency component 10-1 further includes a first interconnection structure 24 respectively connected to the source electrode, the drain electrode and the gate electrode.
  • the radio frequency semiconductor device structure includes a first microwave absorption layer 30-1 disposed above the first radio frequency element 10-1, and the first microwave absorption layer 30-1 is specifically located in the dielectric layer 23, and also The second microwave absorption layer 30 - 2 is included under the first radio frequency element 10 - 1 , and the second microwave absorption layer 30 - 2 is specifically located in the substrate layer 20 .
  • the second microwave absorbing layer 30 - 1 may also be located in the insulating layer 21 , or on the backside of the substrate layer 20 , or the substrate layer 20 is the second microwave absorbing layer.
  • first microwave absorption layer 30-1 and the second microwave absorption layer 30-2 are respectively located above and below the first radio frequency device 10-1, and their purpose is to absorb the electromagnetic waves generated by the first radio frequency device 10-1. It is not limited in which layer it is located. For example, other structural layers are formed above or below the first radio frequency device 10-1, and the first microwave absorption layer 30-1 and the second microwave absorption layer 30-2 are also formed. It can be arranged in the corresponding structural layer.
  • the projections of the first microwave absorption layer 30-1 and the second microwave absorption layer 30-2 on the surface of the substrate layer 20 surround the first radio frequency device 10-1 on the surface of the substrate layer. projection in the direction.
  • the projection of the first radio frequency device 10-1 may not completely surround the projection of the first or second microwave absorption layer, and the first microwave absorption layer is arranged in the region where the first radio frequency device 10-1 generates more electromagnetic waves layer or a second microwave absorbing layer.
  • Disposing the second microwave absorbing layer 30-2 in the substrate layer 20, or disposing the second microwave absorbing layer 30-2 on the back of the substrate layer, can cut off the electromagnetic coupling between the first radio frequency element 10-1 and the substrate layer 20, Reduce electromagnetic wave radiation and reduce power consumption.
  • a shallow trench isolation structure is provided between adjacent first radio frequency components (MOS transistors in this embodiment, but may also be other transistors), and the first radio frequency components are provided in the shallow trench isolation structure.
  • the shallow trench isolation structure is located in the semiconductor layer 22 and includes a trench, an insulating medium 41 located in the trench, the third microwave absorbing layer 30-3 is embedded in the insulating medium 41, and the third microwave absorbing layer 30-3 is embedded in the insulating medium 41.
  • the microwave absorbing layer 30-3 may be wrapped around by the insulating medium 41, and the upper surface of the third microwave absorbing layer 30-3 may not be covered by the insulating medium 41, but may be covered by other medium layers.
  • Figure 1 shows two MOS transistor structures, a shallow trench isolation structure is provided between two adjacent MOS transistor structures, and two third microwave absorption layers are provided in the shallow trench isolation structure between the two MOS transistors 30-3, a third microwave absorbing layer 30-3 is provided outside the source and drain of each MOS transistor.
  • a third microwave absorption layer 30-3 may be disposed between the two first radio frequency components.
  • a third microwave absorption layer 30-3 is disposed between two adjacent first radio frequency elements 10-1, which can block electromagnetic coupling between adjacent first radio frequency elements 10-1.
  • the radio frequency semiconductor device structure further includes a second radio frequency element 10-2, which is located above the first radio frequency element 10-1 and in the dielectric layer 23, where the first microwave absorption layer 30-1 is located. between the first radio frequency element 10-1 and the second radio frequency element 10-2.
  • the second radio frequency element 10-2 includes at least one of a capacitor, an inductor and a resistor.
  • the first microwave absorption layer 30-1 is arranged between the first radio frequency element 10-1 and the second radio frequency element 10-2, which can block the electromagnetic coupling between the first radio frequency element 10-1 and the second radio frequency element 10-2 .
  • the material of the first microwave absorption layer 30-1 or the second microwave absorption layer 30-2 or the third microwave absorption layer 30-3 includes thermoplastic resin and electromagnetic wave absorption particles distributed in the thermoplastic resin.
  • the thermoplastic resin includes polyurethane acrylic resin, polyimide resin, polybenzoxazole resin, and benzocyclobutene resin.
  • the electromagnetic wave absorbing particles include: porous glassy carbon spheres, amorphous titanium ceramic particles, carbonyl iron particles, fine carbon particles, mixtures of carbon and metal particles, silicon carbide-carbon, ferric oxide hollow spheres, graphene-carbonyl A mixture of iron powder and ferric tetroxide. wherein the metal particles in the mixture of carbon and metal particles include at least one of copper particles, aluminum particles, Co particles, Fe-Co alloy particles, Ni particles, Fe-Ni alloy particles, Fe particles, or any combination thereof .
  • the first microwave absorbing layer 30-1 is a single layer; or, it is at least two layers, and two adjacent first microwave absorbing layers 30-1 are in contact with or separated from each other, and the material of each layer of the first microwave absorbing layer is same or different; and/or, the second microwave absorbing layer 30-2 is a single layer; or, at least two layers, two adjacent second microwave absorbing layers are in contact with or separated from each other, each layer of the second microwave absorbing layer 30-2 is a single layer;
  • the materials of the microwave absorbing layers are the same or different; and/or, the third microwave absorbing layer 30-3 is a single layer; or, at least two layers, two adjacent third microwave absorbing layers are in contact with or separated from each other, each The materials of the third microwave absorbing layer are the same or different.
  • the total thickness of the first microwave absorption layer 30-1 and/or the second microwave absorption layer 30-2 is 0.5 micrometers to 50 micrometers, such as 1 micrometer, 10 micrometers, 20 micrometers, and the like.
  • the frequency range of electromagnetic waves absorbed by the first microwave absorption layer 30-1 and/or the second microwave absorption layer 30-2 and/or the third microwave absorption layer 30-3 is 300kHz ⁇ 300GHz, such as 1MHz, 100MHz , 1GHz, etc.
  • Embodiment 2 of the present invention provides a method for manufacturing a radio frequency semiconductor device structure, including:
  • a substrate is provided, and the first surface of the substrate is a semiconductor layer;
  • S04 forming a second dielectric layer and a first microwave absorbing layer in the second dielectric layer on the first dielectric layer; and/or, forming a second microwave absorbing layer on the substrate layer; and/or , a third microwave absorption layer is formed between the adjacent first radio frequency components.
  • Step S0N does not represent a sequential order.
  • FIG. 2 to FIG. 8 describe the manufacturing method of the radio frequency semiconductor device structure.
  • the substrate includes a substrate layer 20 , an insulating layer 21 and the semiconductor layer 22 stacked in sequence from bottom to top.
  • the substrate is specifically an SOI substrate, that is, the material of the substrate layer 20 is silicon, the material of the insulating layer 21 is silicon oxide, and the material of the semiconductor layer 22 is also silicon, specifically monocrystalline silicon.
  • the materials of the substrate layer 20 , the insulating layer 21 and the semiconductor layer 22 refer to the relevant descriptions in Embodiment 1, and are not repeated here.
  • this embodiment further includes forming a second microwave absorbing layer 30 - 2 in the substrate layer 20 , and the forming method is as follows: coating a second microwave absorbing material layer on the back of the substrate layer 20 , and forming a second microwave absorbing material layer on the backside of the substrate layer 20 .
  • the microwave absorbing material layer is cured by light or heating to form the second microwave absorbing layer 30-2; or, a second groove is formed from the back of the substrate layer 20, and a second microwave absorbing material layer is coated to fill the first microwave absorbing material layer. Two grooves, remove the second microwave absorbing material layer outside the second groove, and leave the second microwave absorbing material layer in the second groove as the second microwave absorbing layer 30-2.
  • the second microwave absorbing layer 30-2 may be exposed on the backside of the substrate layer 20, or may be formed on the backside of the substrate layer 20 and the surface of the second microwave absorbing layer 30-2 after the second microwave absorbing layer 30-2 is formed A material layer consistent with the material of the substrate layer 20 covers the second microwave absorbing layer 30-2.
  • the material of the second microwave absorbing material layer refers to Embodiment 1, and details are not repeated here.
  • a corresponding process is used to solidify the second microwave absorbing material layer into a sheet shape.
  • the second microwave absorbing material layer is cured by light irradiation or heating.
  • the second microwave absorbing material layer located outside the second groove is removed, leaving the second microwave absorbing material layer.
  • the second microwave absorbing material layer in the groove serves as the second microwave absorbing layer 30-2.
  • the second grooves may be formed on the backside of the substrate layer 20 through a dry etching process.
  • a first radio frequency element 10-1 is formed on the semiconductor layer 22.
  • the first radio frequency element 10-1 is a MOS transistor, and the source and drain of the MOS transistor are formed in the semiconductor layer 22.
  • the gate of the MOS transistor is formed above the surface of the semiconductor layer 22 .
  • the first radio frequency element may also be a diode or a triode.
  • a shallow trench isolation structure is formed in the semiconductor layer 22 to electrically isolate two adjacent MOS transistors.
  • the shallow trench isolation structure includes: a trench located in the Dielectric 41 in the trench.
  • a third microwave absorbing layer 30-3 is formed in the insulating medium 41, and the third microwave absorbing layer 30-3 can be surrounded by the insulating medium 41.
  • the third microwave absorbing layer 30-3 The upper surface of -3 is not covered with the insulating medium 41.
  • the method for forming the third microwave absorbing layer in the shallow trench isolation structure is as follows: forming a trench in the semiconductor layer through an etching process, and using thermal oxidation or deposition on the bottom surface and the bottom surface of the trench. An oxide layer is formed on the sidewall, the oxide layer does not fill the trench, and then a third microwave absorption layer is filled in the trench where the oxide layer is formed.
  • the method for forming the third microwave absorption layer in the shallow trench isolation structure is: forming a trench in the semiconductor layer through an etching process, filling the trench with an insulating material, and forming a recess in the insulating material a groove, a third microwave absorbing layer is formed in the groove, and then an insulating material is formed on the third microwave absorbing layer to cover the third microwave absorbing layer, the insulating material wraps the third microwave absorbing layer, and the insulating material constitutes an insulating medium , the upper surface of the insulating medium is flush with the upper surface of the semiconductor layer.
  • a first dielectric layer 23-1 is formed on the semiconductor layer 22 and the first radio frequency element 10-1, and a first interconnect structure 24 is formed in the first dielectric layer 23-1 to connect the first Radio frequency component 10-1.
  • a first dielectric layer 23-1 is formed by physical vapor deposition or chemical vapor deposition, covering the semiconductor layer 22 and the first radio frequency element 10-1.
  • the material of the first dielectric layer 23-1 includes one or more combinations of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3) and aluminum nitride (AlN).
  • through holes that penetrate the first dielectric layer 23-1 and are separated from each other are formed above the corresponding regions of the source, drain and gate of the MOS transistor.
  • the through holes can be formed by a dry etching process.
  • the dry etching process Including but not limited to reactive ion etching (RIE), ion beam etching, plasma etching.
  • Conductive materials are composed of molybdenum (Mo), aluminum (Al), copper (Cu), tungsten (W), tantalum (Ta), platinum (Pt), ruthenium (Ru), rhodium (Rh), iridium (Ir), chromium ( Cr), titanium (Ti), gold (Au), osmium (Os), rhenium (Re), palladium (Pd) and other metals, or a laminate of the above metals.
  • a second dielectric layer and a first microwave absorption layer 30-1 in the second dielectric layer are formed on the first dielectric layer 23-1.
  • the steps of forming the second dielectric layer 23-2 on the first dielectric layer 23-1 and the first microwave absorbing layer 30-1 in the second dielectric layer 23-2 include: forming A second dielectric layer 23-2 with a first groove 25; coating a first microwave absorbing material layer to fill the first groove 25 and covering the second dielectric layer 23-2; curing the The first microwave absorbing material layer 30-1; the first microwave absorbing material layer located outside the first groove 25 is removed, and the first microwave absorbing material layer in the first groove 25 remains as the first microwave Absorber layer 30-1.
  • the method for forming the second dielectric layer 23-2 with the first grooves 25 is: forming a dielectric material through a deposition process, covering the first dielectric layer 23-1 and the first interconnect structure, and performing dry etching The process forms a first groove 25 in the dielectric material over the first interconnect structure and the first radio frequency component 10-1.
  • the projection of the first groove 25 on the surface of the substrate layer 20 surrounds the projection of the first radio frequency element 10 - 1 on the surface of the substrate layer 20 .
  • the material of the second dielectric layer 23-2 refers to the material of the first dielectric layer 23-1.
  • a first microwave absorbing material layer is coated to fill the first groove and cover the second dielectric layer.
  • the material of the first microwave absorbing material layer refer to Embodiment 1, and details are not repeated here.
  • a corresponding process is used to solidify the first microwave absorbing material layer into a sheet shape.
  • the first microwave absorbing material layer is cured by light irradiation or heating. Before or after curing the first microwave absorbing material layer, the first microwave absorbing material layer outside the first groove is removed, and the first microwave absorbing material layer in the first groove remains as the first microwave Absorber layer 30-1.
  • this embodiment further includes forming a third dielectric layer 23-3 on the second dielectric layer 23-2 and a second radio frequency element 10-2 located in the third dielectric layer.
  • the second radio frequency element 10- 2 includes at least one of capacitance, inductance and resistance.
  • the second radio frequency element 10-2 is located above the first microwave absorption layer 30-1, and the first microwave absorption layer 30-1 can reduce the generation of radiation generated between the first radio frequency element 10-1 and the second radio frequency element 10-2. Electromagnetic coupling.
  • the first microwave absorbing layer 30-1, the second microwave absorbing layer 30-2 or the third microwave absorbing layer 30-3 may be a single layer or a multi-layer.
  • the structure can achieve better wave absorption effect, and when it is a single layer, the manufacturing process is convenient.
  • the thickness of the first microwave absorption layer 30-1, the second microwave absorption layer 30-2 or the third microwave absorption layer 30-3 is 0.5 micrometers to 50 micrometers, such as 2 micrometers, 8 micrometers, 30 micrometers, and the like.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

La présente invention concerne une structure de dispositif semi-conducteur à fréquence radio et son procédé de fabrication. La structure de dispositif semi-conducteur à fréquence radio comprend : un substrat, une première surface du substrat étant une couche semi-conductrice ; des premiers éléments à fréquence radio situés sur la couche semi-conductrice ; une couche diélectrique située sur la couche semi-conductrice et recouvrant les premiers éléments à fréquence radio ; une première couche d'absorption de micro-ondes placée au-dessus des premiers éléments à fréquence radio ; et/ou une deuxième couche d'absorption de micro-ondes placée au-dessous des premiers éléments à fréquence radio ; et/ou une troisième couche d'absorption de micro-ondes placée entre les premiers éléments à fréquence radio adjacents. La première couche d'absorption de micro-ondes, la deuxième couche d'absorption de micro-ondes et la troisième couche d'absorption de micro-ondes selon la présente invention permettent d'absorber des ondes électromagnétiques générées par des dispositifs à fréquence radio, ce qui permet de réduire le couplage électromagnétique entre des dispositifs à fréquence radio ou entre un dispositif à fréquence radio et un substrat semi-conducteur.
PCT/CN2021/113275 2020-09-10 2021-08-18 Structure de dispositif semi-conducteur à fréquence radio et son procédé de fabrication WO2022052761A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010947697.9 2020-09-10
CN202010947697.9A CN114171501A (zh) 2020-09-10 2020-09-10 一种射频半导体器件结构及其制造方法

Publications (1)

Publication Number Publication Date
WO2022052761A1 true WO2022052761A1 (fr) 2022-03-17

Family

ID=80475596

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/113275 WO2022052761A1 (fr) 2020-09-10 2021-08-18 Structure de dispositif semi-conducteur à fréquence radio et son procédé de fabrication

Country Status (2)

Country Link
CN (1) CN114171501A (fr)
WO (1) WO2022052761A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101964340A (zh) * 2009-07-23 2011-02-02 华为技术有限公司 功放封装装置及基站设备
US8335084B2 (en) * 2005-08-01 2012-12-18 Georgia Tech Research Corporation Embedded actives and discrete passives in a cavity within build-up layers
CN102907191A (zh) * 2010-06-16 2013-01-30 莱尔德技术股份有限公司 热界面材料组件以及相关方法
CN106783805A (zh) * 2017-03-13 2017-05-31 中国科学院微电子研究所 射频多芯片封装及屏蔽电路
US10615135B2 (en) * 2018-07-19 2020-04-07 Cree, Inc. Radio frequency transistor amplifiers and other multi-cell transistors having isolation structures

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8335084B2 (en) * 2005-08-01 2012-12-18 Georgia Tech Research Corporation Embedded actives and discrete passives in a cavity within build-up layers
CN101964340A (zh) * 2009-07-23 2011-02-02 华为技术有限公司 功放封装装置及基站设备
CN102907191A (zh) * 2010-06-16 2013-01-30 莱尔德技术股份有限公司 热界面材料组件以及相关方法
CN106783805A (zh) * 2017-03-13 2017-05-31 中国科学院微电子研究所 射频多芯片封装及屏蔽电路
US10615135B2 (en) * 2018-07-19 2020-04-07 Cree, Inc. Radio frequency transistor amplifiers and other multi-cell transistors having isolation structures

Also Published As

Publication number Publication date
CN114171501A (zh) 2022-03-11

Similar Documents

Publication Publication Date Title
JP6956234B2 (ja) ポリマー基板を有する半導体素子を備えるプリント回路モジュール、及びその製造方法
US11004809B2 (en) Chip package with antenna element
TWI247563B (en) Interposer and method of making same
TWI336098B (en) Circuit structure and fabrication method thereof
CN101783314B (zh) 形成隔离结构的方法和相应的器件
DE112012004106B4 (de) Verfahren zum Bonden eines Substrats
US10068861B2 (en) Semiconductor device
JP2006203176A (ja) 半導体装置及び半導体モジュール
JP2011009769A (ja) 半導体デバイスおよびその構造体の製造方法
KR20120049865A (ko) 후면 방열 기능을 갖는 반도체-온-절연체
TW200415730A (en) Semiconductor device and method for fabricating the same
TWI700802B (zh) 射頻電子整合封裝結構及其製法
TWI326890B (en) Impurity doped uv protection layer
WO2018219101A1 (fr) Structure de condensateur métallique arrière de semi-conducteur composé et son procédé de fabrication
TW200843086A (en) Semiconductor device
US10403772B2 (en) Electrical and optical via connections on a same chip
TWI783279B (zh) 鋁基氮化鎵積體電路
JP2008085362A (ja) 半導体装置及び半導体モジュール
WO2022052761A1 (fr) Structure de dispositif semi-conducteur à fréquence radio et son procédé de fabrication
JPH09270515A (ja) 半導体装置
US6518141B2 (en) Method for manufacturing a radio frequency integrated circuit on epitaxial silicon
TW200910575A (en) Semiconductor device and a method for fabricating the same
JPH11145386A (ja) インダクタ素子およびその製造方法
US10607958B2 (en) Flip chip backside die grounding techniques
JP4731984B2 (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21865817

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21865817

Country of ref document: EP

Kind code of ref document: A1