WO2022052761A1

WO2022052761A1 - Radio frequency semiconductor device structure and manufacturing method therefor

Info

Publication number: WO2022052761A1
Application number: PCT/CN2021/113275
Authority: WO
Inventors: 黄河; 向阳辉
Original assignee: 中芯集成电路（宁波）有限公司上海分公司
Priority date: 2020-09-10
Filing date: 2021-08-18
Publication date: 2022-03-17
Also published as: CN114171501A

Abstract

The present invention relates to a radio frequency semiconductor device structure and a manufacturing method therefor. The radio frequency semiconductor device structure comprises: a substrate, a first surface of the substrate being a semiconductor layer; first radio frequency elements located on the semiconductor layer; a dielectric layer located on the semiconductor layer and covering the first radio frequency elements; a first microwave absorption layer provided above the first radio frequency elements; and/or a second microwave absorption layer provided below the first radio frequency elements; and/or a third microwave absorption layer provided between the adjacent first radio frequency elements. The first microwave absorption layer, the second microwave absorption layer, and the third microwave absorption layer in the present invention can absorb electromagnetic waves generated by radio frequency devices, thereby reducing electromagnetic coupling between radio frequency devices or between a radio frequency device and a semiconductor substrate.

Description

A kind of radio frequency semiconductor device structure and its manufacturing method

technical field

The invention relates to the field of semiconductor device manufacturing, in particular to a radio frequency semiconductor device structure and a manufacturing method thereof.

Background technique

Integrated devices are typically formed on substrates in the form of wafers, which are primarily used as supports for the fabrication of the devices. The upper surface and periphery of the integrated device are wrapped by a dielectric layer to isolate the micro-device units and interconnect lines that constitute the integrated device. With the improvement of the integration of semiconductor devices, especially radio frequency devices, the processing frequency of radio frequency devices is between about 3kHz and 300GHz. The signal between the two, its application is especially in the field of telecommunications. The influence of electromagnetic coupling between a radio frequency device and a substrate, between adjacent radio frequency devices, and between a radio frequency device and other devices or interconnects on the device performance becomes more and more obvious with the increase of frequency.

technical problem

Therefore, how to reduce the electromagnetic coupling of radio frequency devices is the main problem currently faced.

technical solutions

The purpose of the present invention is to provide a semiconductor device structure and a manufacturing method thereof, which can solve the problem of electromagnetic coupling between radio frequency devices or between radio frequency devices and a substrate.

In order to achieve the above purpose, the present invention provides a radio frequency semiconductor device structure, including:

a substrate, the first surface of the substrate is a semiconductor layer; the first radio frequency element is located in the semiconductor layer;

a dielectric layer, located on the semiconductor layer and covering the first radio frequency element;

The first microwave absorbing layer is arranged above the first radio frequency element; and/or the second microwave absorbing layer is arranged below the first radio frequency element; and/or the third microwave absorbing layer is arranged on the between adjacent first radio frequency components.

The present invention also provides a method for manufacturing a radio frequency semiconductor device structure, comprising:

providing a substrate, the first surface of which is a semiconductor layer;

forming a first radio frequency element on the semiconductor layer;

forming a first dielectric layer, forming a first interconnect structure in the first dielectric layer, and connecting the first radio frequency components;

forming a second dielectric layer and a first microwave absorption layer in the second dielectric layer on the first dielectric layer;

and/or, forming a second microwave absorption layer on the substrate layer;

And/or, a third microwave absorption layer is formed between the adjacent first radio frequency components.

beneficial effect

The beneficial effects of the present invention are:

A first microwave absorption layer is arranged above the first radio frequency element, and/or a second microwave absorption layer is arranged under the first radio frequency element, and/or a third microwave absorption layer is arranged between the first radio frequency elements. The /second/third microwave absorption layer can absorb electromagnetic waves generated by the first radio frequency element from different directions, thereby reducing electromagnetic coupling between the first radio frequency element and other electronic devices or semiconductor materials.

Further, the first microwave absorption layer is located between the first radio frequency element and the second radio frequency element, which can reduce the electromagnetic coupling generated between the first radio frequency element and the second radio frequency element.

Further, the substrate layer is made of semiconductor material, and a second microwave absorption layer is arranged in the substrate layer, or a second microwave absorption layer is arranged on the back of the substrate layer, which can reduce the electromagnetic coupling between the first radio frequency element and the substrate layer, and reduce electromagnetic waves. radiation, reducing power loss.

Further, the projection of the first/second microwave absorbing layer in the direction of the surface of the substrate layer surrounds the projection of the first radio frequency element in the direction of the surface of the substrate layer, which can reduce the amount of the first radio frequency element and other electronic devices or semiconductor materials to a greater extent. electromagnetic coupling between them.

Further, the first/second/third microwave absorbing layer can be a single layer or a multi-layer, when it is a multi-layer, a better wave-absorbing effect can be achieved, and when it is a single-layer, the manufacturing process is convenient.

Description of drawings

In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained according to these drawings without creative efforts.

FIG. 1 shows a schematic diagram of the structure of a radio frequency semiconductor device according to Embodiment 1 of the present invention.

FIG. 2 to FIG. 8 are schematic diagrams of corresponding structures in different steps of the manufacturing method of the radio frequency semiconductor device structure according to Embodiment 2 of the present invention.

Description of reference numbers:

20-substrate layer; 21-insulating layer; 22-semiconductor layer; 10-1-first radio frequency element; 10-2-second radio frequency element; 23-dielectric layer; 23-1-first dielectric layer; 23-2 - second dielectric layer; 23-3 - third dielectric layer; 24 - first interconnect structure; 25 - first groove; 30-1 - first microwave absorbing layer; 30-2 - second microwave absorbing layer; 30-3-the third microwave absorption layer; 40-shallow trench isolation structure; 41-insulating medium.

Embodiments of the present invention

The structure of the radio frequency semiconductor device and the manufacturing method thereof of the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description and accompanying drawings. However, it should be noted that the concept of the technical solution of the present invention can be implemented in various forms, and is not limited to the specific implementation described here. example. The accompanying drawings are all in a very simplified form and in an inaccurate scale, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention.

The terms "first," "second," and the like, in the specification and claims are used to distinguish between similar elements, and are not necessarily used to describe a particular order or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances, eg, to enable the embodiments of the invention described herein to operate in other sequences than described or illustrated herein. Similarly, if a method described herein includes a series of steps, the order of the steps presented herein is not necessarily the only order in which the steps may be performed, and some of the steps described may be omitted and/or some not described herein Additional steps can be added to this method. If the components in a certain drawing are the same as the components in other drawings, although these components can be easily identified in all the drawings, in order to make the description of the drawings clearer, this specification will not refer to all the same components. Numbers are attached to each figure.

实施例Example 11

Embodiment 1 of the present invention provides a structure of a radio frequency semiconductor device. FIG. 1 is a schematic diagram of the structure of a radio frequency semiconductor device according to Embodiment 1 of the present invention. Please refer to FIG. 1. The structure of the radio frequency semiconductor device includes:

a substrate, the first surface of which is the semiconductor layer 22;

The first radio frequency element 10-1 is located in the semiconductor layer 22;

The dielectric layer 23 is located on the semiconductor layer 22 and covers the first radio frequency element 10-1;

The first microwave absorption layer 30-1 is disposed above the first radio frequency element 10-1; and/or the second microwave absorption layer 30-2 is disposed under the first radio frequency element 10-1; And/or, the third microwave absorption layer 30-3 is disposed between the adjacent first radio frequency elements 10-1.

The first microwave absorbing layer can cut off the electromagnetic coupling between the device and other devices on top of it and the interconnects; the second microwave absorbing layer can cut off the electromagnetic coupling between the device and the semiconductor substrate, and the third microwave absorbing layer can cut off the electromagnetic coupling between the devices effect.

In this embodiment, the substrate includes a substrate layer 20, an insulating layer 21 and the semiconductor layer 22 stacked in sequence from bottom to top, such as an SOI substrate, that is, the material of the substrate layer 20 is silicon, and the material of the insulating layer 21 is oxide Silicon, the material of the semiconductor layer 22 is also silicon, and the semiconductor layer 22 is specifically monocrystalline silicon. In other embodiments, the material of the substrate layer 20 or the semiconductor layer 22 may also be other semiconductor materials, such as germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), Gallium Arsenide (GaAs), Indium Phosphide (InP) or other III/V compound semiconductors. The substrate layer 20 may also be a non-semiconductor material, such as a ceramic substrate such as alumina, a quartz or glass substrate, and the like. The material of the insulating layer 21 may also be other insulating materials commonly used in semiconductor processes, such as silicon nitride or silicon oxynitride. In other embodiments, the substrate may also have other structures, for example, the first surface is a semiconductor layer, and the bottom of the first surface is a dielectric layer.

In this embodiment, the material of the substrate layer 20 is P-type silicon with a resistance value greater than 10KOhm.cm. The reason for choosing a high resistance value is: when the first radio frequency component 10-1 above the substrate layer 20 is connected to an alternating current, the alternating current generates electromagnetic waves, and the electromagnetic waves radiate a part of the electric energy. Under certain conditions, the radiation loss increases, and the use of high-resistance materials can reduce electromagnetic wave radiation and reduce power loss.

The first radio frequency element 10 - 1 is formed in the semiconductor layer 22 . In this embodiment, specifically, the lower half of the first radio frequency element 10-1 is located in the semiconductor layer 22, and the upper half of the first radio frequency element 10-1 is located in the dielectric layer 23, that is, the dielectric layer 23 is located in the semiconductor layer 22. , cover the first radio frequency element 10-1. In another embodiment, the first radio frequency components may all be located in the semiconductor layer. The material of the dielectric layer 23 includes one or more combinations of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3) and aluminum nitride (AlN). The first radio frequency component 10-1 includes at least one of a diode, a triode, and a MOS transistor. In this embodiment, the first radio frequency element 10 - 1 is a MOS transistor, the source and drain of the MOS transistor are located in the semiconductor layer 22 , and the gate of the MOS transistor is located in the dielectric layer 23 above the semiconductor layer 22 . In this embodiment, the first radio frequency component 10-1 further includes a first interconnection structure 24 respectively connected to the source electrode, the drain electrode and the gate electrode.

Referring to FIG. 1 , in this embodiment, the radio frequency semiconductor device structure includes a first microwave absorption layer 30-1 disposed above the first radio frequency element 10-1, and the first microwave absorption layer 30-1 is specifically located in the dielectric layer 23, and also The second microwave absorption layer 30 - 2 is included under the first radio frequency element 10 - 1 , and the second microwave absorption layer 30 - 2 is specifically located in the substrate layer 20 . In other embodiments, the second microwave absorbing layer 30 - 1 may also be located in the insulating layer 21 , or on the backside of the substrate layer 20 , or the substrate layer 20 is the second microwave absorbing layer. It should be understood that the first microwave absorption layer 30-1 and the second microwave absorption layer 30-2 are respectively located above and below the first radio frequency device 10-1, and their purpose is to absorb the electromagnetic waves generated by the first radio frequency device 10-1. It is not limited in which layer it is located. For example, other structural layers are formed above or below the first radio frequency device 10-1, and the first microwave absorption layer 30-1 and the second microwave absorption layer 30-2 are also formed. It can be arranged in the corresponding structural layer.

In this embodiment, in order to better absorb electromagnetic waves, the projections of the first microwave absorption layer 30-1 and the second microwave absorption layer 30-2 on the surface of the substrate layer 20 surround the first radio frequency device 10-1 on the surface of the substrate layer. projection in the direction. In other embodiments, the projection of the first radio frequency device 10-1 may not completely surround the projection of the first or second microwave absorption layer, and the first microwave absorption layer is arranged in the region where the first radio frequency device 10-1 generates more electromagnetic waves layer or a second microwave absorbing layer.

Disposing the second microwave absorbing layer 30-2 in the substrate layer 20, or disposing the second microwave absorbing layer 30-2 on the back of the substrate layer, can cut off the electromagnetic coupling between the first radio frequency element 10-1 and the substrate layer 20, Reduce electromagnetic wave radiation and reduce power consumption.

In this embodiment, a shallow trench isolation structure is provided between adjacent first radio frequency components (MOS transistors in this embodiment, but may also be other transistors), and the first radio frequency components are provided in the shallow trench isolation structure. Three microwave absorbing layers 30-3. The shallow trench isolation structure is located in the semiconductor layer 22 and includes a trench, an insulating medium 41 located in the trench, the third microwave absorbing layer 30-3 is embedded in the insulating medium 41, and the third microwave absorbing layer 30-3 is embedded in the insulating medium 41. The microwave absorbing layer 30-3 may be wrapped around by the insulating medium 41, and the upper surface of the third microwave absorbing layer 30-3 may not be covered by the insulating medium 41, but may be covered by other medium layers. Figure 1 shows two MOS transistor structures, a shallow trench isolation structure is provided between two adjacent MOS transistor structures, and two third microwave absorption layers are provided in the shallow trench isolation structure between the two MOS transistors 30-3, a third microwave absorbing layer 30-3 is provided outside the source and drain of each MOS transistor. In other embodiments, a third microwave absorption layer 30-3 may be disposed between the two first radio frequency components. In the horizontal direction, a third microwave absorption layer 30-3 is disposed between two adjacent first radio frequency elements 10-1, which can block electromagnetic coupling between adjacent first radio frequency elements 10-1.

In this embodiment, the radio frequency semiconductor device structure further includes a second radio frequency element 10-2, which is located above the first radio frequency element 10-1 and in the dielectric layer 23, where the first microwave absorption layer 30-1 is located. between the first radio frequency element 10-1 and the second radio frequency element 10-2. The second radio frequency element 10-2 includes at least one of a capacitor, an inductor and a resistor. The first microwave absorption layer 30-1 is arranged between the first radio frequency element 10-1 and the second radio frequency element 10-2, which can block the electromagnetic coupling between the first radio frequency element 10-1 and the second radio frequency element 10-2 .

The material of the first microwave absorption layer 30-1 or the second microwave absorption layer 30-2 or the third microwave absorption layer 30-3 includes thermoplastic resin and electromagnetic wave absorption particles distributed in the thermoplastic resin. In this embodiment, the thermoplastic resin includes polyurethane acrylic resin, polyimide resin, polybenzoxazole resin, and benzocyclobutene resin. The electromagnetic wave absorbing particles include: porous glassy carbon spheres, amorphous titanium ceramic particles, carbonyl iron particles, fine carbon particles, mixtures of carbon and metal particles, silicon carbide-carbon, ferric oxide hollow spheres, graphene-carbonyl A mixture of iron powder and ferric tetroxide. wherein the metal particles in the mixture of carbon and metal particles include at least one of copper particles, aluminum particles, Co particles, Fe-Co alloy particles, Ni particles, Fe-Ni alloy particles, Fe particles, or any combination thereof .

The first microwave absorbing layer 30-1 is a single layer; or, it is at least two layers, and two adjacent first microwave absorbing layers 30-1 are in contact with or separated from each other, and the material of each layer of the first microwave absorbing layer is same or different; and/or, the second microwave absorbing layer 30-2 is a single layer; or, at least two layers, two adjacent second microwave absorbing layers are in contact with or separated from each other, each layer of the second microwave absorbing layer 30-2 is a single layer; The materials of the microwave absorbing layers are the same or different; and/or, the third microwave absorbing layer 30-3 is a single layer; or, at least two layers, two adjacent third microwave absorbing layers are in contact with or separated from each other, each The materials of the third microwave absorbing layer are the same or different. The total thickness of the first microwave absorption layer 30-1 and/or the second microwave absorption layer 30-2 is 0.5 micrometers to 50 micrometers, such as 1 micrometer, 10 micrometers, 20 micrometers, and the like.

The frequency range of electromagnetic waves absorbed by the first microwave absorption layer 30-1 and/or the second microwave absorption layer 30-2 and/or the third microwave absorption layer 30-3 is 300kHz～300GHz, such as 1MHz, 100MHz , 1GHz, etc.

实施例Example 22

Embodiment 2 of the present invention provides a method for manufacturing a radio frequency semiconductor device structure, including:

S01: a substrate is provided, and the first surface of the substrate is a semiconductor layer;

S02: forming a first radio frequency element on the semiconductor layer;

S03: forming a first dielectric layer, forming a first interconnect structure in the first dielectric layer, and connecting the first radio frequency components;

S04: forming a second dielectric layer and a first microwave absorbing layer in the second dielectric layer on the first dielectric layer; and/or, forming a second microwave absorbing layer on the substrate layer; and/or , a third microwave absorption layer is formed between the adjacent first radio frequency components.

Step S0N does not represent a sequential order.

Below, please refer to FIG. 2 to FIG. 8 to describe the manufacturing method of the radio frequency semiconductor device structure.

Referring to FIG. 2 , in this embodiment, the substrate includes a substrate layer 20 , an insulating layer 21 and the semiconductor layer 22 stacked in sequence from bottom to top. In this embodiment, the substrate is specifically an SOI substrate, that is, the material of the substrate layer 20 is silicon, the material of the insulating layer 21 is silicon oxide, and the material of the semiconductor layer 22 is also silicon, specifically monocrystalline silicon. In other embodiments, the materials of the substrate layer 20 , the insulating layer 21 and the semiconductor layer 22 refer to the relevant descriptions in Embodiment 1, and are not repeated here.

Referring to FIG. 3 , this embodiment further includes forming a second microwave absorbing layer 30 - 2 in the substrate layer 20 , and the forming method is as follows: coating a second microwave absorbing material layer on the back of the substrate layer 20 , and forming a second microwave absorbing material layer on the backside of the substrate layer 20 . The microwave absorbing material layer is cured by light or heating to form the second microwave absorbing layer 30-2; or, a second groove is formed from the back of the substrate layer 20, and a second microwave absorbing material layer is coated to fill the first microwave absorbing material layer. Two grooves, remove the second microwave absorbing material layer outside the second groove, and leave the second microwave absorbing material layer in the second groove as the second microwave absorbing layer 30-2. The second microwave absorbing layer 30-2 may be exposed on the backside of the substrate layer 20, or may be formed on the backside of the substrate layer 20 and the surface of the second microwave absorbing layer 30-2 after the second microwave absorbing layer 30-2 is formed A material layer consistent with the material of the substrate layer 20 covers the second microwave absorbing layer 30-2.

For the material of the second microwave absorbing material layer, refer to Embodiment 1, and details are not repeated here. According to the material of the second microwave absorbing material layer, a corresponding process is used to solidify the second microwave absorbing material layer into a sheet shape. For example, the second microwave absorbing material layer is cured by light irradiation or heating. When the second microwave absorbing material layer is formed in the second groove, before or after curing the second microwave absorbing material layer, the second microwave absorbing material layer located outside the second groove is removed, leaving the second microwave absorbing material layer. The second microwave absorbing material layer in the groove serves as the second microwave absorbing layer 30-2. The second grooves may be formed on the backside of the substrate layer 20 through a dry etching process.

Referring to FIG. 4, a first radio frequency element 10-1 is formed on the semiconductor layer 22. In this embodiment, the first radio frequency element 10-1 is a MOS transistor, and the source and drain of the MOS transistor are formed in the semiconductor layer 22. The gate of the MOS transistor is formed above the surface of the semiconductor layer 22 . In other embodiments, the first radio frequency element may also be a diode or a triode.

In this embodiment, before forming the MOS transistors, a shallow trench isolation structure is formed in the semiconductor layer 22 to electrically isolate two adjacent MOS transistors. The shallow trench isolation structure includes: a trench located in the Dielectric 41 in the trench. In this embodiment, a third microwave absorbing layer 30-3 is formed in the insulating medium 41, and the third microwave absorbing layer 30-3 can be surrounded by the insulating medium 41. In this embodiment, the third microwave absorbing layer 30-3 The upper surface of -3 is not covered with the insulating medium 41. When the first medium layer is formed in the subsequent process, the first medium layer covers the upper surface of the third microwave absorption layer. In this embodiment, the method for forming the third microwave absorbing layer in the shallow trench isolation structure is as follows: forming a trench in the semiconductor layer through an etching process, and using thermal oxidation or deposition on the bottom surface and the bottom surface of the trench. An oxide layer is formed on the sidewall, the oxide layer does not fill the trench, and then a third microwave absorption layer is filled in the trench where the oxide layer is formed. In another embodiment, the method for forming the third microwave absorption layer in the shallow trench isolation structure is: forming a trench in the semiconductor layer through an etching process, filling the trench with an insulating material, and forming a recess in the insulating material a groove, a third microwave absorbing layer is formed in the groove, and then an insulating material is formed on the third microwave absorbing layer to cover the third microwave absorbing layer, the insulating material wraps the third microwave absorbing layer, and the insulating material constitutes an insulating medium , the upper surface of the insulating medium is flush with the upper surface of the semiconductor layer.

Referring to FIG. 5, a first dielectric layer 23-1 is formed on the semiconductor layer 22 and the first radio frequency element 10-1, and a first interconnect structure 24 is formed in the first dielectric layer 23-1 to connect the first Radio frequency component 10-1.

First, a first dielectric layer 23-1 is formed by physical vapor deposition or chemical vapor deposition, covering the semiconductor layer 22 and the first radio frequency element 10-1. The material of the first dielectric layer 23-1 includes one or more combinations of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3) and aluminum nitride (AlN). Then, through holes that penetrate the first dielectric layer 23-1 and are separated from each other are formed above the corresponding regions of the source, drain and gate of the MOS transistor. The through holes can be formed by a dry etching process. The dry etching process Including but not limited to reactive ion etching (RIE), ion beam etching, plasma etching. The bottom of the through hole exposes the source electrode, the drain electrode and the gate electrode, a conductive material is formed in the through hole and the peripheral region of the through hole, and the first interconnect structure 24 is formed by patterning the conductive material. Conductive materials are composed of molybdenum (Mo), aluminum (Al), copper (Cu), tungsten (W), tantalum (Ta), platinum (Pt), ruthenium (Ru), rhodium (Rh), iridium (Ir), chromium ( Cr), titanium (Ti), gold (Au), osmium (Os), rhenium (Re), palladium (Pd) and other metals, or a laminate of the above metals.

6 and 7, a second dielectric layer and a first microwave absorption layer 30-1 in the second dielectric layer are formed on the first dielectric layer 23-1.

In this embodiment, the steps of forming the second dielectric layer 23-2 on the first dielectric layer 23-1 and the first microwave absorbing layer 30-1 in the second dielectric layer 23-2 include: forming A second dielectric layer 23-2 with a first groove 25; coating a first microwave absorbing material layer to fill the first groove 25 and covering the second dielectric layer 23-2; curing the The first microwave absorbing material layer 30-1; the first microwave absorbing material layer located outside the first groove 25 is removed, and the first microwave absorbing material layer in the first groove 25 remains as the first microwave Absorber layer 30-1.

Referring to FIG. 6 , the method for forming the second dielectric layer 23-2 with the first grooves 25 is: forming a dielectric material through a deposition process, covering the first dielectric layer 23-1 and the first interconnect structure, and performing dry etching The process forms a first groove 25 in the dielectric material over the first interconnect structure and the first radio frequency component 10-1. In this embodiment, in order to better absorb electromagnetic waves, the projection of the first groove 25 on the surface of the substrate layer 20 surrounds the projection of the first radio frequency element 10 - 1 on the surface of the substrate layer 20 . The material of the second dielectric layer 23-2 refers to the material of the first dielectric layer 23-1.

Referring to FIG. 7 , a first microwave absorbing material layer is coated to fill the first groove and cover the second dielectric layer. For the material of the first microwave absorbing material layer, refer to Embodiment 1, and details are not repeated here. According to the material of the first microwave absorbing material layer, a corresponding process is used to solidify the first microwave absorbing material layer into a sheet shape. For example, the first microwave absorbing material layer is cured by light irradiation or heating. Before or after curing the first microwave absorbing material layer, the first microwave absorbing material layer outside the first groove is removed, and the first microwave absorbing material layer in the first groove remains as the first microwave Absorber layer 30-1.

Referring to FIG. 8 , this embodiment further includes forming a third dielectric layer 23-3 on the second dielectric layer 23-2 and a second radio frequency element 10-2 located in the third dielectric layer. The second radio frequency element 10- 2 includes at least one of capacitance, inductance and resistance. The second radio frequency element 10-2 is located above the first microwave absorption layer 30-1, and the first microwave absorption layer 30-1 can reduce the generation of radiation generated between the first radio frequency element 10-1 and the second radio frequency element 10-2. Electromagnetic coupling.

The first microwave absorbing layer 30-1, the second microwave absorbing layer 30-2 or the third microwave absorbing layer 30-3 may be a single layer or a multi-layer. The structure can achieve better wave absorption effect, and when it is a single layer, the manufacturing process is convenient. The thickness of the first microwave absorption layer 30-1, the second microwave absorption layer 30-2 or the third microwave absorption layer 30-3 is 0.5 micrometers to 50 micrometers, such as 2 micrometers, 8 micrometers, 30 micrometers, and the like.

It should be noted that each embodiment in this specification is described in a related manner, and the same and similar parts between the various embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. . In particular, for the method embodiments, since they are basically similar to the structural embodiments, the description is relatively simple, and reference may be made to some descriptions of the structural embodiments for related parts.

The above description is only a description of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any changes and modifications made by those of ordinary skill in the field of the present invention based on the above disclosure all belong to the protection scope of the claims.

Claims

A radio frequency semiconductor device structure, characterized in that it includes:

a substrate, the first surface of which is a semiconductor layer;

a first radio frequency element, located in the semiconductor layer;

a dielectric layer, located on the semiconductor layer and covering the first radio frequency element;

The first microwave absorbing layer is arranged above the first radio frequency element; and/or the second microwave absorbing layer is arranged below the first radio frequency element; and/or the third microwave absorbing layer is arranged on the between adjacent first radio frequency components.
The radio frequency semiconductor device structure according to claim 1, wherein the substrate comprises a substrate layer, an insulating layer and the semiconductor layer stacked in sequence from bottom to top.
The radio frequency semiconductor device structure according to claim 1, wherein the material of the first microwave absorbing layer or the second microwave absorbing layer or the third microwave absorbing layer comprises: thermoplastic resin and materials distributed in the Electromagnetic wave absorbing particles in thermoplastic resins.
The radio frequency semiconductor device structure according to claim 3, wherein the thermoplastic resin comprises: urethane acrylic resin, polyimide resin, polybenzoxazole resin or benzocyclobutene resin.
The radio frequency semiconductor device structure according to claim 3, wherein the electromagnetic wave absorbing particles comprise: porous glassy carbon spheres, amorphous titanium ceramic particles, carbonyl iron particles, fine carbon particles, a mixture of carbon and metal particles, Silicon carbide-carbon, ferric oxide hollow spheres, and mixture particles of graphene-carbonyl iron powder and ferric oxide.
The radio frequency semiconductor device structure according to claim 5, wherein the metal particles comprise at least one of copper particles, aluminum particles, Co particles, Fe-Co alloy particles, Ni particles, Fe-Ni alloy particles, and Fe particles One, or any combination of them.
The radio frequency semiconductor device structure according to claim 1, wherein the first microwave absorbing layer is a single layer; or, the first microwave absorbing layer is at least two layers, and two adjacent first microwave absorbing layers are in contact with or separated from each other, and each The materials of the first microwave absorbing layer are the same or different;

And/or, the second microwave absorbing layer is a single layer; or, at least two layers, two adjacent second microwave absorbing layers are in contact with or separated from each other, and the materials of each second microwave absorbing layer are the same or different;

And/or, the third microwave absorbing layer is a single layer; or, at least two layers, two adjacent third microwave absorbing layers are in contact with or separated from each other, and the materials of each layer of the third microwave absorbing layer are the same or different.
The radio frequency semiconductor device structure according to claim 1, further comprising: a second radio frequency element located above the first radio frequency element and in the dielectric layer;

The first microwave absorption layer is located between the first radio frequency element and the second radio frequency element.
The radio frequency semiconductor device structure according to claim 1, wherein,

There is a shallow trench isolation structure between the adjacent first radio frequency elements, and the third microwave absorption layer is arranged in the shallow trench isolation structure;

The shallow trench isolation structure is located in the semiconductor layer and includes a trench, an insulating medium located in the trench, and the third microwave absorption layer is embedded in the insulating medium.
The radio frequency semiconductor device structure according to claim 9, wherein the first radio frequency element comprises: a transistor, and a shallow trench isolation structure is provided between adjacent transistors;

The shallow trench isolation structure between adjacent transistors is provided with the third microwave absorption layer.
The radio frequency semiconductor device structure according to claim 1, wherein the first microwave absorption layer is located in the dielectric layer.
The radio frequency semiconductor device structure according to claim 2, wherein the second microwave absorption layer is located in the insulating layer, or located in the substrate layer or located on the backside of the substrate, or, the The substrate layer is the second microwave absorption layer.
The radio frequency semiconductor device structure according to claim 1, wherein the electromagnetic wave frequency range absorbed by the first microwave absorbing layer and/or the second microwave absorbing layer and/or the third microwave absorbing layer ranges from 300 kHz to 300 kHz. 300GHz.
The radio frequency semiconductor device structure according to claim 2, wherein the projection of the first microwave absorption layer or the second microwave absorption layer in the direction of the surface of the substrate layer is the same as that of the first radio frequency device. The projections on the substrate layer are provided with overlapping portions.
The radio frequency semiconductor device structure according to claim 2, wherein the projection of the first microwave absorption layer or the second microwave absorption layer in the direction of the surface of the substrate layer surrounds the first radio frequency device at the The projection on the surface direction of the substrate layer.
The radio frequency semiconductor device structure according to claim 1, wherein the first radio frequency element comprises at least one of a diode, a triode, and a MOS transistor.
The radio frequency semiconductor device structure according to claim 8, wherein the second radio frequency element comprises at least one of a capacitor, an inductor and a resistor.
The radio frequency semiconductor device structure according to claim 1, wherein the thickness of the first microwave absorption layer and/or the second microwave absorption layer is 0.5 micrometers to 50 micrometers.
The radio frequency semiconductor device structure according to claim 2, wherein the semiconductor layer is a single crystal silicon layer, the substrate layer is a silicon layer, and the insulating layer is silicon oxide.
A method for manufacturing a radio frequency semiconductor device structure, comprising:

providing a substrate, the first surface of which is a semiconductor layer;

forming a first radio frequency element on the semiconductor layer;

forming a first dielectric layer, forming a first interconnect structure in the first dielectric layer, and connecting the first radio frequency components;

forming a second dielectric layer and a first microwave absorption layer in the second dielectric layer on the first dielectric layer;

and/or, forming a second microwave absorption layer in the substrate under the first radio frequency element;

And/or, a third microwave absorption layer is formed between the adjacent first radio frequency components.
The method for manufacturing a semiconductor device structure according to claim 20, wherein the substrate comprises a substrate layer, an insulating layer and the semiconductor layer stacked in sequence from bottom to top, and the second microwave absorbing layer is located on the second microwave absorbing layer. in the substrate layer.
The method for manufacturing a semiconductor device structure according to claim 20, wherein the microwave absorbing layer comprises: a thermoplastic resin and microwave absorbing particles distributed in the thermoplastic resin.
The method of manufacturing a semiconductor device structure according to claim 20, wherein:

The step of forming a second dielectric layer on the first dielectric layer and a first microwave absorbing layer in the second dielectric layer includes:

forming a second dielectric layer having a first groove;

coating a first microwave absorbing material layer to fill the first groove and cover the second dielectric layer;

performing light irradiation or heating to cure the first microwave absorbing material layer;

The first microwave absorbing material layer located outside the first groove is removed, and the first microwave absorbing material layer in the first groove is left as the first microwave absorbing layer.
The method for fabricating a semiconductor device structure according to claim 21, wherein forming the second microwave absorbing layer on the substrate layer comprises:

A second microwave absorbing material layer is coated on the back of the substrate layer, and the second microwave absorbing material layer is cured by light or heating to form the second microwave absorbing layer;

Or, forming a second groove from the back of the substrate layer, coating a second microwave absorbing material layer to fill the second groove, removing the second microwave absorbing material layer located outside the second groove, and leaving the remaining The second microwave absorbing material layer in the second groove is used as the second microwave absorbing layer.
The method for manufacturing a semiconductor device structure according to claim 20, wherein forming a third microwave absorbing layer between adjacent first radio frequency elements comprises: forming a third microwave absorption layer between adjacent first radio frequency elements A shallow trench isolation structure; the shallow trench isolation structure is located in the semiconductor layer, and includes: a trench, an insulating medium located in the trench, and the third microwave absorption layer is formed in the insulating medium.
The method for manufacturing a semiconductor device structure according to claim 20, wherein the thermoplastic resin comprises: urethane acrylic resin, polyimide resin, polybenzoxazole resin or benzocyclobutene resin, and the thermoplastic resin comprises: Electromagnetic wave absorbing particles include: porous glassy carbon spheres, amorphous titanium ceramic particles, carbonyl iron particles, fine carbon particles, mixtures of carbon and metal particles, silicon carbide-carbon, ferric oxide hollow spheres, graphene-carbonyl iron powder Mixture granules with ferric oxide.
The method for manufacturing a semiconductor device structure according to claim 26, wherein the metal particles include copper particles, aluminum particles, Co particles, Fe-Co alloy particles, Ni particles, Fe-Ni alloy particles, Fe particles at least one of them, or any combination of them.
The method for manufacturing a semiconductor device structure according to claim 21, wherein the projection of the first microwave absorbing layer and/or the second microwave absorbing layer in the direction of the surface of the substrate layer surrounds the first microwave absorbing layer The projection of the radio frequency device in the direction of the surface of the substrate layer.