WO2022000605A1 - 一种导电膜层、导电膜层制备方法及显示装置 - Google Patents

一种导电膜层、导电膜层制备方法及显示装置 Download PDF

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WO2022000605A1
WO2022000605A1 PCT/CN2020/103196 CN2020103196W WO2022000605A1 WO 2022000605 A1 WO2022000605 A1 WO 2022000605A1 CN 2020103196 W CN2020103196 W CN 2020103196W WO 2022000605 A1 WO2022000605 A1 WO 2022000605A1
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Prior art keywords
metal layer
layer
conductive film
metal
film layer
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PCT/CN2020/103196
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English (en)
French (fr)
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黄建龙
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武汉华星光电技术有限公司
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Priority to US16/979,185 priority Critical patent/US11942239B2/en
Publication of WO2022000605A1 publication Critical patent/WO2022000605A1/zh
Priority to US18/427,894 priority patent/US20240170180A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0036—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/008—Apparatus or processes specially adapted for manufacturing conductors or cables for manufacturing extensible conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Definitions

  • the present application relates to the field of display technology, and in particular, to a conductive film layer, a method for preparing the conductive film layer, and a display device.
  • SD is the channel for signal transmission.
  • a TI/Al/Ti three-layer structure is used.
  • the lower layer of Ti is connected to Poly-Si, which can form a good ohmic contact because the potential barrier of Ti is relatively low.
  • the middle Al is the main body of SD.
  • Al has good electrical conductivity and can transmit signals quickly.
  • the upper layer of Ti can protect the main Al and reduce oxidation.
  • Ti can prevent Al from bulging during heating, resulting in abnormal overlap. The problem.
  • the impedance of SD is getting smaller and smaller, and increasing the thickness of the SD layer Al is the main method at present.
  • SD is formed by three-layer metal film formation in the same process. Since Ti/etching speed is slower than Al, SD will form side etching, and black-level stripes will appear during lighting due to light refraction.
  • Embodiments of the present application provide a conductive film layer, a method for preparing the conductive film layer, and a display device, so as to solve the technical problem of black level stripes.
  • An embodiment of the present application provides a method for preparing a conductive film layer, including:
  • the substrate has a first surface and a second surface disposed oppositely;
  • a first metal layer and a second metal layer are formed on the first surface, the first metal layer is located on the first surface, and the second metal layer is located on the second metal layer away from the first metal layer side;
  • a third metal layer is formed on the side of the second metal layer away from the substrate, the third metal covers the edge of the second metal layer and is in contact with the first metal layer.
  • the method includes:
  • the first metal layer and the second metal layer are etched.
  • the method includes:
  • the third metal layer is etched.
  • the method includes:
  • the first metal layer, the second metal layer and the third metal layer form a complete conductive film layer.
  • the method includes:
  • a light shielding layer is provided on the side of the third metal layer away from the substrate, and the light shielding layer shields the reflected light on both sides of the second metal layer.
  • the material used for the first metal layer and the third metal layer is titanium, and the material used for the second metal layer is aluminum.
  • the thickness of the second metal layer is 4500A to 5500A.
  • the thickness of the second metal layer is 5000A.
  • the embodiment of the present application also provides a conductive film layer, comprising:
  • the first metal layer has a first surface and a second surface arranged oppositely;
  • the third metal layer is disposed on the side of the second metal layer away from the first metal layer, and the third metal covers the edge of the second metal layer and is in contact with the first metal layer.
  • the material used for the first metal layer and the third metal layer is titanium, and the material used for the second metal layer is aluminum.
  • the thickness of the second metal layer is 4500A to 5500A.
  • the thickness of the second metal layer is 5000A.
  • the first metal layer, the second metal layer and the third metal layer form a complete conductive film layer.
  • the first metal layer completely surrounds the second metal layer.
  • An embodiment of the present application provides a display device, including a conductive film layer, and the conductive film includes:
  • a first metal layer having oppositely arranged upper and lower surfaces
  • the third metal layer is disposed on the side of the second metal layer away from the first metal layer, and the third metal covers the edge of the second metal layer and is in contact with the first metal layer.
  • the material used for the first metal layer and the third metal layer is titanium, and the material used for the second metal layer is aluminum.
  • the thickness of the second metal layer is 4500A to 5500A.
  • the thickness of the second metal layer is 5000A.
  • the first metal layer, the second metal layer and the third metal layer form a complete conductive film layer.
  • the first metal layer completely surrounds the second metal layer.
  • the method for preparing the conductive film layer first provides a substrate, the substrate has a first surface and a second surface disposed opposite to each other, and the first surface and the second surface are oppositely arranged.
  • a first metal layer and a second metal layer are formed on the surface, the first metal layer is located on the first surface, and the second metal layer is located on the side of the second metal layer away from the first metal layer.
  • a third metal layer is formed on the side of the second metal layer away from the substrate, the third metal covers the edge of the second metal layer and is in contact with the first metal layer.
  • the second metal layer of the intermediate layer can be completely wrapped by the first metal layer to avoid light refraction, thereby fundamentally solving the black-level stripes caused by the lateral etching of the second metal layer.
  • FIG. 1 is a schematic flowchart of a method for preparing a conductive film layer provided by an embodiment of the present application.
  • FIG. 2 is a schematic diagram of a scene of a method for preparing a conductive film layer provided by an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a conductive film layer provided by an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a display device provided by an embodiment of the present application.
  • Embodiments of the present application provide a conductive film layer, a method for preparing the conductive film layer, and a display device. The following describes the method for preparing the conductive film layer in detail.
  • FIG. 1 is a schematic flowchart of a method for preparing a conductive film layer provided by an embodiment of the present application.
  • FIG. 2 is a schematic diagram of a scene of a method for preparing a conductive film layer provided by an embodiment of the present application.
  • a preparation method of a conductive film layer comprising the steps:
  • the substrate 20 has a first surface 20a and a second surface 20b disposed opposite to each other.
  • the substrate 20 may be an array substrate 20 .
  • the first surface 20 a is the upper surface 11 a of the substrate 20
  • the second surface 20 b is the lower surface 11 b of the substrate 20 .
  • the positions of the first surface 20a and the second surface 20b may also be interchanged in some embodiments.
  • first metal layer 11 and a second metal layer 12 Form a first metal layer 11 and a second metal layer 12 on the first surface 20a, the first metal layer 11 is located on the first surface 20a, and the second metal layer 12 is located on the second metal layer The layer 12 is away from the side of the first metal layer 11 .
  • first metal layer 11 and the second metal layer 12 on the first surface 20a may be formed by processes such as coating/exposure, development, etching, and photoresist removal, respectively.
  • the method includes:
  • the first metal layer 11 and the second metal layer 12 are etched.
  • the first metal layer 11 is made of titanium
  • the second metal layer 12 is made of aluminum.
  • the etching speed of the second metal layer 12 is higher than that of the second metal layer 12.
  • the first metal layer 11 and therefore the second metal layer 12 is narrower than the first metal layer 11 , which makes it more convenient for the third metal layer 13 to include the second metal layer 12 .
  • the third metal layer 13 may be formed by processes such as coating/exposure, development, etching, and photoresist removal, respectively. At the same time, the outside of the third metal layer 13 wraps the second metal layer 12 to prevent the side surface of the second metal layer 12 from refracting light. Thus, the phenomenon of black-level stripes is avoided.
  • the method includes:
  • the third metal layer 13 is etched, so that the first metal layer 11 , the second metal layer 12 and the third metal layer 13 form a complete conductive film layer 10 .
  • the method includes:
  • a light shielding layer 30 is provided on the side of the third metal layer 13 away from the substrate 20 , and the light shielding layer 30 shields the reflected light on both sides of the second metal layer 12 .
  • the light shielding layer 30 blocks the reflected light on both sides of the second metal layer 12 , which can further avoid the possibility of black-level stripes appearing in the display device 100 .
  • the material used for the first metal layer 11 and the third metal layer 13 is titanium, and the material used for the second metal layer 12 is aluminum.
  • the first metal layer 11 , the second metal layer 12 , and the third metal layer 13 may also use other metal materials.
  • the metal materials specifically used for the first metal layer 11 , the second metal layer 12 , and the third metal layer 13 are not limited.
  • the thickness of the second metal layer 12 is 4500A to 5500A.
  • the thickness of the second metal layer 12 may be 4500A, 5000A, 5200A, 5500A, or the like.
  • the thickness of the metal layer of the present application is thicker than that of the existing second metal layer 12 , which can reduce the resistance of the conductive film layer 10 .
  • the thickness of the second metal layer 12 is thicker, it is easier to cause refraction at the edge of the second metal layer 12, so that black-level stripes appear. With this method of the present application, the edge of the second metal layer 12 can be prevented from refraction, and black-level stripes can be avoided.
  • the method for preparing the conductive film layer 10 in the embodiment of the present application first provides a substrate 20, the substrate 20 has a first surface 20a and a second surface 20b disposed opposite to each other, and the first metal layer 11 and the first metal layer 11 and the second surface 20b are formed on the first surface 20a.
  • a third metal layer 13 is formed on one side of the two metal layers 12 away from the substrate 20 , and the third metal covers the edge of the second metal layer 12 and is in contact with the first metal layer 11 .
  • the second metal layer 12 of the intermediate layer can be completely wrapped by the first metal layer 11 to avoid the refraction of light, so as to fundamentally solve the black level stripes caused by the lateral etching of the second metal layer 12
  • FIG. 3 is a schematic structural diagram of a conductive film layer provided by an embodiment of the present application.
  • the embodiment of the present application provides a conductive film layer 10 including a first metal layer 11 , a second metal layer 12 and a third metal layer 13 .
  • the first metal layer 11 has an upper surface 11 a and a lower surface 11 b arranged oppositely.
  • the second metal layer 12 is disposed on the upper surface 11a
  • the third metal layer 13 is disposed on the side of the second metal layer 12 away from the first metal layer 11, and the third metal covers the second metal layer 12 edge and in contact with the first metal layer 11 .
  • the material used for the first metal layer 11 and the third metal layer 13 is titanium, and the material used for the second metal layer 12 is aluminum. It can be understood that, the first metal layer 11 , the second metal layer 12 , and the third metal layer 13 may also use other metal materials. In the embodiments of the present application, the metal materials specifically used for the first metal layer 11 , the second metal layer 12 , and the third metal layer 13 are not limited.
  • the thickness of the second metal layer 12 is 4500A to 5500A.
  • the thickness of the second metal layer 12 may be 4500A, 5000A, 5200A, 5500A, and the like.
  • the thickness of the metal layer of the present application is thicker than that of the existing second metal layer 12 , which can reduce the resistance of the conductive film layer 10 .
  • the thickness of the second metal layer 12 is thicker, it is easier to cause refraction at the edge of the second metal layer 12, so that black-level stripes appear. With this method of the present application, the edge of the second metal layer 12 can be prevented from refraction, and black-level stripes can be avoided.
  • the second metal layer 12 of the intermediate layer can be completely wrapped by the first metal layer 11 to avoid light refraction, so as to fundamentally solve the black level stripes caused by the lateral etching of the second metal layer 12 .
  • FIG. 4 is a schematic structural diagram of a display device according to an embodiment of the present application.
  • Embodiments of the present application provide a display device 100 including the conductive film layer 10 described above. Since the conductive film layer 10 is described in detail in the above embodiments, the conductive film layer 10 will not be described in detail in the embodiments of the present application.
  • the display device 100 provided by the embodiment of the present application can completely wrap the second metal layer of the intermediate layer through the first metal layer to avoid light refraction, thereby fundamentally solving the black level stripes caused by the lateral etching of the second metal layer .

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  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

一种导电膜层、导电膜层制备方法及显示装置，包括：第一金属层（11），具有相对设置的上表面（11a）和下表面（11b）；第二金属层（12），设置在所述上表面（11a）；第三金属层（13），设置在所述第二金属层（12）远离所述第一金属层（11）的一面，且所述第三金属层（13）覆盖所述第二金属层（12）边缘并与所述第一金属层（11）接触。通过第三金属层（13）可以将中间层的第二金属层（12）完全包裹，避免有光的折射，从而根本上解决第二金属层（12）的侧向蚀刻引起的黑阶条纹。

Description

一种导电膜层、导电膜层制备方法及显示装置 技术领域
本申请涉及显示技术领域，具体涉及一种导电膜层、导电膜层制备方法及显示装置。
 背景技术
面板行业中，SD是信号传输的通道，一般采用TI/Al/Ti三层架构，其中下层Ti与Poly-Si相接因为Ti的势垒比较低可以形成很好的欧姆接触。中间Al为SD主体，Al的导电性比较好，信号可以快速传输，上层Ti一方面可以起到保护主体Al的作用减少氧化，另一方面Ti可以阻止Al在加热时出现凸起导致搭接异常的问题。随着手机性能的不断提升，需求SD越来越小的阻抗，增加SD层Al的厚度是目前的主要方式。SD是三层金属在同一道制程中依次成膜形成，由于Ti/蚀刻速度慢于Al，因此SD会形成侧向蚀刻，由于光的折射在点灯时出现黑阶条纹。
 技术问题
本申请实施例提供一种导电膜层、导电膜层制备方法及显示装置，以解决出现黑阶条纹的技术问题。
 技术解决方案
本申请实施例提供一种导电膜层的制备方法，包括：
提供一基板，所述基板具有相对设置的第一面和第二面；
在所述第一面形成第一金属层和第二金属层，所述第一金属层位于所述第一面，所述第二金属层位于所述第二金属层远离所述第一金属层的一面；
在所述第二金属层远离所述基板的一面形成第三金属层，所述第三金属覆盖所述第二金属层边缘并与所述第一金属层接触。
在一些实施例中，所述在所述第一面形成第一金属层和第二金属层之后，包括：
对所述第一金属层和第二金属层进行蚀刻。
在一些实施例中，所述在所述第二金属层远离所述基板的一面形成第三金属层之后，包括：
对所述第三金属层进行蚀刻。
在一些实施例中，所述对所述第三金属层进行蚀刻之后，包括：
所述第一金属层第二金属层以及第三金属层形成一个完整的导电膜层。
在一些实施例中，所述对所述第三金属层进行蚀刻之后，包括：
在所述第三金属层远离所述基板的一侧设置遮光层，所述遮光层遮挡住所述第二金属层两侧的反射光。
在一些实施例中，所述第一金属层和第三金属层采用的材料为钛，所述第二金属层采用的材料为铝。
在一些实施例中，所述第二金属层的厚度为4500A至5500A。
在一些实施例中，所述第二金属层的厚度为5000A。
本申请实施例还提供一种导电膜层，包括：
第一金属层，具有相对设置的第一面和第二面；
第二金属层，设置在所述第一面；
第三金属层，设置在所述第二金属层远离所述第一金属层的一面，且所述第三金属覆盖所述第二金属层边缘并与所述第一金属层接触。
在一些实施例中，所述第一金属层和第三金属层采用的材料为钛，所述第二金属层采用的材料为铝。
在一些实施例中，所述第二金属层的厚度为4500A至5500A。
在一些实施例中，所述第二金属层的厚度为5000A。
在一些实施例中，所述第一金属层第二金属层以及第三金属层形成一个完整的导电膜层。
在一些实施例中，所述第一金属层将所述第二金属层完全包裹。
本申请实施例提供一种显示装置，包括导电膜层，所述导电膜包括：
第一金属层，具有相对设置的上表面和下表面；
第二金属层，设置在所述上表面；
第三金属层，设置在所述第二金属层远离所述第一金属层的一面，且所述第三金属覆盖所述第二金属层边缘并与所述第一金属层接触。
在一些实施例中，所述第一金属层和第三金属层采用的材料为钛，所述第二金属层采用的材料为铝。
在一些实施例中，所述第二金属层的厚度为4500A至5500A。
在一些实施例中，所述第二金属层的厚度为5000A。
在一些实施例中，所述第一金属层第二金属层以及第三金属层形成一个完整的导电膜层。
在一些实施例中，所述第一金属层将所述第二金属层完全包裹。
 有益效果
本申请实施例所提供的导电膜层、导电膜层制备方法及显示装置，导电膜层制备方法首先提供一基板，所述基板具有相对设置的第一面和第二面，在所述第一面形成第一金属层和第二金属层，所述第一金属层位于所述第一面，所述第二金属层位于所述第二金属层远离所述第一金属层的一面，在所述第二金属层远离所述基板的一面形成第三金属层，所述第三金属覆盖所述第二金属层边缘并与所述第一金属层接触。本申请通过第一金属层可以将中间层的第二金属层完全包裹，避免有光的折射，从而根本上解决第二金属层的侧向蚀刻引起的黑阶条纹。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的导电膜层制备方法流程示意图。
图2为本申请实施例提供的导电膜层制备方法场景示意图。
图3为本申请实施例提供的导电膜层的结构示意图。
图4为本申请实施例提供的显示装置的结构示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
需要说明的是，在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
本申请实施例提供一种导电膜层、导电膜层制备方法及显示装置，以下对导电膜层制备方法做详细介绍。
请参阅图1和图2所示，图1为本申请实施例提供的导电膜层制备方法流程示意图。图2为本申请实施例提供的导电膜层制备方法场景示意图。其中，一种导电膜层的制备方法，包括步骤：
101、提供一基板20，所述基板20具有相对设置的第一面20a和第二面20b。
需要说明的是，基板20可以为阵列基板20，通常情况下第一面20a为基板20的上表面11a，第二面20b为基板20的下表面11b。当然，在一些实施例中第一面20a和第二面20b的位置也可以互换。
102、在所述第一面20a形成第一金属层11和第二金属层12，所述第一金属层11位于所述第一面20a，所述第二金属层12位于所述第二金属层12远离所述第一金属层11的一面。
需要说明的是，在第一面20a形成第一金属层11和第二金属层12可以分别通过涂布/曝光、显影、刻蚀、去光阻等工艺形成。
在一些实施例中，所述在所述第一面20a形成第一金属层11和第二金属层12之后，包括：
对所述第一金属层11和第二金属层12进行蚀刻。
需要说明的是，第一金属层11采用钛，第二金属层12采用铝，对所述第一金属层11和第二金属层12进行蚀刻时，因为第二金属层12的刻蚀速度大于第一金属层11，因此第二金属层12比第一金属层11窄，这样更方便第三金属层13包括第二金属层12。
103、在所述第二金属层12远离所述基板20的一面形成第三金属层13，所述第三金属覆盖所述第二金属层12边缘并与所述第一金属层11接触。
需要说明的是，第三金属层13可以分别通过涂布/曝光、显影、刻蚀、去光阻等工艺形成。同时，第三金属层13外侧包裹住第二金属层12，避免第二金属层12的侧面折射光线。从而避免出现黑阶条纹的现象。
在一些实施例中，所述在所述第二金属层12远离所述基板20的一面形成第三金属层13之后，包括：
（1）对所述第三金属层13进行蚀刻。
需要说明的是，对第三金属层13进行蚀刻，从而使得第一金属层11、第二金属层12以及第三金属层13形成一个完整的导电膜层10。
在一些实施例中，所述对所述第三金属层13进行蚀刻之后，包括：
（1）在所述第三金属层13远离所述基板20的一侧设置遮光层30，所述遮光层30遮挡住所述第二金属层12两侧的反射光。
需要说明的是，遮光层30挡住第二金属层12两侧的反射光，这样能够进一步的避免的显示装置100出现黑阶条纹的可能。
在一些实施例中，所述第一金属层11和第三金属层13采用的材料为钛，所述第二金属层12采用的材料为铝。
可以理解的是，第一金属层11、第二金属层12、第三金属层13还可以采用其他金属材料。本申请实施例中对第一金属层11、第二金属层12以及第三金属层13具体采用的金属材料不做限定。
在一些实施例中，所述第二金属层12的厚度为4500A至5500A。
需要说明的是，第二金属层12的厚度可以为4500A、5000A、5200A以及5500A等。本申请金属层的厚度相对于现有的第二金属层12的厚度要厚，这样可以降低导电膜层10的阻抗。又因为第二金属层12的厚度更厚，这样更加容易在第二金属层12的边缘产生折射，从而出现黑阶条纹。而采用本申请的这种方法，能够防止第二金属层12的边缘产生折射，避免黑阶条纹。
本申请实施例的导电膜层10制备方法首先提供一基板20，所述基板20具有相对设置的第一面20a和第二面20b，在所述第一面20a形成第一金属层11和第二金属层12，所述第一金属层11位于所述第一面20a，所述第二金属层12位于所述第二金属层12远离所述第一金属层11的一面，在所述第二金属层12远离所述基板20的一面形成第三金属层13，所述第三金属覆盖所述第二金属层12边缘并与所述第一金属层11接触。本申请通过第一金属层11可以将中间层的第二金属层12完全包裹，避免有光的折射，从而根本上解决第二金属层12的侧向蚀刻引起的黑阶条纹
请参阅图3，图3为本申请实施例提供的导电膜层的结构示意图。其中，本申请实施例提供一种导电膜层10包括第一金属层11、第二金属层12以及第三金属层13，第一金属层11具有相对设置的上表面11a和下表面11b，第二金属层12设置在所述上表面11a，第三金属层13设置在所述第二金属层12远离所述第一金属层11的一面，且所述第三金属覆盖所述第二金属层12边缘并与所述第一金属层11接触。
其中，所述第一金属层11和第三金属层13采用的材料为钛，所述第二金属层12采用的材料为铝。可以理解的是，第一金属层11、第二金属层12、第三金属层13还可以采用其他金属材料。本申请实施例中对第一金属层11、第二金属层12以及第三金属层13具体采用的金属材料不做限定。
其中，所述第二金属层12的厚度为4500A至5500A。第二金属层12的厚度可以为4500A、5000A、5200A以及5500A等。本申请金属层的厚度相对于现有的第二金属层12的厚度要厚，这样可以降低导电膜层10的阻抗。又因为第二金属层12的厚度更厚，这样更加容易在第二金属层12的边缘产生折射，从而出现黑阶条纹。而采用本申请的这种方法，能够防止第二金属层12的边缘产生折射，避免黑阶条纹。
本申请通过第一金属层11可以将中间层的第二金属层12完全包裹，避免有光的折射，从而根本上解决第二金属层12的侧向蚀刻引起的黑阶条纹。
请参阅图4，图4为本申请实施例提供的显示装置的结构示意图。本申请实施例提供一种显示装置100，包括以上所述的导电膜层10。由于上述实施例中对导电膜层10进行了详细描述，因此，本申请实施例中对导电膜层10不再做过多的赘述。
本申请实施例所提供的显示装置100通过第一金属层可以将中间层的第二金属层完全包裹，避免有光的折射，从而根本上解决第二金属层的侧向蚀刻引起的黑阶条纹。
以上对本申请实施例提供的一种导电膜层、导电膜层制备方法及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种导电膜层的制备方法，其中，包括：
    提供一基板，所述基板具有相对设置的第一面和第二面；
    在所述第一面形成第一金属层和第二金属层，所述第一金属层位于所述第一面，所述第二金属层位于所述第二金属层远离所述第一金属层的一面；
    在所述第二金属层远离所述基板的一面形成第三金属层，所述第三金属覆盖所述第二金属层边缘并与所述第一金属层接触。
  2. 根据权利要求1所述的导电膜层的制备方法，其中，所述在所述第一面形成第一金属层和第二金属层之后，包括：
    对所述第一金属层和第二金属层进行蚀刻。
  3. 根据权利要求2所述的导电膜层的制备方法，其中，所述在所述第二金属层远离所述基板的一面形成第三金属层之后，包括：
    对所述第三金属层进行蚀刻。
  4. 根据权利要求3所述的导电膜层的制备方法，其中，所述对所述第三金属层进行蚀刻之后，包括：
    所述第一金属层第二金属层以及第三金属层形成一个完整的导电膜层。
  5. 根据权利要求4所述的导电膜层的制备方法，其中，所述对所述第三金属层进行蚀刻之后，包括：
    在所述第三金属层远离所述基板的一侧设置遮光层，所述遮光层遮挡住所述第二金属层两侧的反射光。
  6. 根据权利要求1所述的导电膜层的制备方法，其中，所述第一金属层和第三金属层采用的材料为钛，所述第二金属层采用的材料为铝。
  7. 根据权利要求1所述的导电膜层的制备方法，其中，所述第二金属层的厚度为4500A至5500A。
  8. 根据权利要求3所述的导电膜层的制备方法，其中，所述第二金属层的厚度为5000A。
  9. 一种导电膜层，其中，包括：
    第一金属层，具有相对设置的上表面和下表面；
    第二金属层，设置在所述上表面；
    第三金属层，设置在所述第二金属层远离所述第一金属层的一面，且所述第三金属覆盖所述第二金属层边缘并与所述第一金属层接触。
  10. 根据权利要求9所述的导电膜层，其中，所述第一金属层和第三金属层采用的材料为钛，所述第二金属层采用的材料为铝。
  11. 根据权利要求9所述的导电膜层，其中，所述第二金属层的厚度为4500A至5500A。
  12. 根据权利要求11所述的导电膜层，其中，所述第二金属层的厚度为5000A。
  13. 根据权利要求9所述的导电膜层，其中，所述第一金属层第二金属层以及第三金属层形成一个完整的导电膜层。
  14. 根据权利要求9所述的导电膜层，其中，所述第一金属层将所述第二金属层完全包裹。
  15. 一种显示装置，其中，包括导电膜层，所述导电膜包括：
    第一金属层，具有相对设置的上表面和下表面；
    第二金属层，设置在所述上表面；
    第三金属层，设置在所述第二金属层远离所述第一金属层的一面，且所述第三金属覆盖所述第二金属层边缘并与所述第一金属层接触。
  16. 根据权利要求15所述的显示装置，其中，所述第一金属层和第三金属层采用的材料为钛，所述第二金属层采用的材料为铝。
  17. 根据权利要求15所述的显示装置，其中，所述第二金属层的厚度为4500A至5500A。
  18. 根据权利要求17所述的显示装置，其中，所述第二金属层的厚度为5000A。
  19. 根据权利要求15所述的显示装置，其中，所述第一金属层第二金属层以及第三金属层形成一个完整的导电膜层。
  20. 根据权利要求15所述的显示装置，其中，所述第一金属层将所述第二金属层完全包裹。
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Publication number Priority date Publication date Assignee Title
CN113495388B (zh) * 2021-06-30 2023-12-01 Tcl华星光电技术有限公司 显示面板及显示面板的制备方法
CN117317110A (zh) * 2022-06-21 2023-12-29 合肥京东方瑞晟科技有限公司 一种布线基板及其制备方法、发光面板、显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030127648A1 (en) * 1997-06-11 2003-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing it
CN107170679A (zh) * 2017-05-19 2017-09-15 京东方科技集团股份有限公司 一种导电图形的制作方法、导电图形及显示基板
CN108735761A (zh) * 2017-04-20 2018-11-02 京东方科技集团股份有限公司 导电图案结构及其制备方法、阵列基板和显示装置
CN110098236A (zh) * 2019-05-14 2019-08-06 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
CN110462830A (zh) * 2019-06-27 2019-11-15 京东方科技集团股份有限公司 显示基板及其制备方法、显示面板和显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3614618A (en) * 1970-05-06 1971-10-19 Ncr Co Magnetic susceptibility tester
JP5131505B2 (ja) * 2001-04-27 2013-01-30 Ｎｌｔテクノロジー株式会社 液晶表示装置
CN102929454A (zh) * 2011-08-12 2013-02-13 宸鸿科技(厦门)有限公司 电容式触控面板及降低其金属导体可见度的方法
CN103365013B (zh) * 2013-07-01 2016-03-02 京东方科技集团股份有限公司 一种阵列基板、液晶显示屏及显示装置
CN109256399B (zh) * 2018-10-31 2021-02-02 武汉天马微电子有限公司 一种显示面板及显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030127648A1 (en) * 1997-06-11 2003-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing it
CN108735761A (zh) * 2017-04-20 2018-11-02 京东方科技集团股份有限公司 导电图案结构及其制备方法、阵列基板和显示装置
CN107170679A (zh) * 2017-05-19 2017-09-15 京东方科技集团股份有限公司 一种导电图形的制作方法、导电图形及显示基板
CN110098236A (zh) * 2019-05-14 2019-08-06 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
CN110462830A (zh) * 2019-06-27 2019-11-15 京东方科技集团股份有限公司 显示基板及其制备方法、显示面板和显示装置

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