WO2021256197A1 - Dispositif de traitement d'informations et procédé de pilotage de dispositif de traitement d'informations - Google Patents

Dispositif de traitement d'informations et procédé de pilotage de dispositif de traitement d'informations Download PDF

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Publication number
WO2021256197A1
WO2021256197A1 PCT/JP2021/019882 JP2021019882W WO2021256197A1 WO 2021256197 A1 WO2021256197 A1 WO 2021256197A1 JP 2021019882 W JP2021019882 W JP 2021019882W WO 2021256197 A1 WO2021256197 A1 WO 2021256197A1
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Prior art keywords
voltage
information processing
drive
fluctuation
changing element
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PCT/JP2021/019882
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English (en)
Japanese (ja)
Inventor
広幸 秋永
久 島
泰久 内藤
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国立研究開発法人産業技術総合研究所
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Priority to JP2022532437A priority Critical patent/JP7398841B2/ja
Publication of WO2021256197A1 publication Critical patent/WO2021256197A1/fr

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/48—Analogue computers for specific processes, systems or devices, e.g. simulators
    • G06G7/60—Analogue computers for specific processes, systems or devices, e.g. simulators for living beings, e.g. their nervous systems ; for problems in the medical field
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Definitions

  • the present invention relates to an information processing apparatus and a method for driving the information processing apparatus.
  • the present invention relates to a brain-type information processing apparatus using an analog resistance changing element and a method for driving the brain-type information processing apparatus.
  • IoT Internet of Things
  • a nerve cell is modeled as a multi-input 1-output element, and an input pattern is learned or inferred by a perceptron.
  • an analog resistance changing element is used for the perceptron, and an array structure in which crossbars are connected by word lines and bit lines is used for the product-sum operation.
  • the analog resistance changing element is also called a memristor or RAND (Resistive Analog Neuro Device).
  • the analog resistance changing element has a resistance switch effect in which the current value changes non-linearly when a voltage is applied to the insulating oxide film, and the resistance value changes in an analog manner due to the redox reaction induced by the current.
  • the process of lowering the resistance (SET) and the process of increasing the resistance (RESET) of the analog resistance changing element can be brought about by applying a drive pulse of a predetermined voltage.
  • flattening means that an event that high resistance occurs when a pulse is applied in the low resistance process or low resistance occurs when a pulse is applied in the high resistance process does not occur. In general, it may be included in a technique for reducing noise or increasing resistance to noise.
  • the first value is set.
  • the stored state the state in which the second value is stored when only one cell unit of the column cell is in the second state
  • the third value when both cell units of the column cell are in the second state.
  • Disclosed is a technique having non-volatility with good retention characteristics by setting a voltage that does not cause a disturbance that causes a state transition in a column cell so as to be in a memorized state (see, for example, Patent Document 3 below).
  • Patent Documents 1 to 3 the prior art only suppresses the generation of external noise and disturbance. Even if these conventional techniques for external noise countermeasures are simply applied to a brain-type information processing system, it is not possible to reduce the power required for pulse application and flatten the change in analog resistance.
  • SET low resistance
  • RESET high resistance
  • an object of the present invention to obtain an information processing apparatus and a driving method of an information processing apparatus capable of suppressing power consumption reduction and resistance change flattening of an analog resistance changing element with a simple configuration. do.
  • the information processing apparatus of the present invention comprises an analog resistance changing element composed of a pair of electrodes and an oxide layer provided between the pair of electrodes, and driving the analog resistance changing element. It is characterized by being provided with a drive circuit that superimposes and supplies voltage fluctuations having a fluctuation component on a signal.
  • the drive circuit is characterized in that it generates a voltage fluctuation that causes a sufficiently small current fluctuation as compared with the current change of the element caused by the drive pulse of a predetermined voltage required for the analog resistance change.
  • the drive pulse is a constant voltage of about several V, and the fluctuation is a voltage of about 1/10 of the drive pulse.
  • the drive pulse is more preferably characterized in that the voltage fluctuation is about 1/10 of the drive pulse of about 0.3 V to 5 V used in the electronic device for IoT.
  • the drive pulse has a voltage of about several V, and the voltage is variable from the initial voltage to the end voltage at a predetermined step voltage, and the voltage fluctuation is about 1/1000 of the drive pulse. do.
  • the voltage fluctuation is characterized by being any of white noise, Gaussian noise, which is easily generated by an electronic circuit, a sine wave, a triangular wave, and a square wave. Further, this does not apply as long as it gives fluctuations to the drive pulse of the voltage that drives the resistance change. Further, it is desirable that the frequency of the voltage fluctuation has a time determined as the reciprocal thereof equal to or less than the drive pulse width.
  • analog resistance changing element is connected to a selection transistor in memory cell units, and the drive circuit supplies the selection transistor with the drive signal superimposed with the voltage fluctuation.
  • the analog resistance changing element is arranged at a plurality of cross points where the word line and the bit line intersect, and the analog resistance changing element is driven and selected by the word line decoder and the bit line decoder, and the drive circuit is the drive circuit. It is characterized in that the drive signal in which the voltage fluctuation is superimposed is supplied to either the word line decoder or the bit line decoder.
  • a voltage having a fluctuation component is applied to a driving signal for driving an analog resistance changing element composed of a pair of electrodes and an oxide layer provided between the pair of electrodes. It is characterized by overlapping.
  • the drive signal is characterized in that it is a voltage fluctuation that causes a sufficiently small current fluctuation as compared with the current change of the element caused by the drive pulse of the voltage required for the analog resistance change.
  • the drive pulse is a constant voltage of about several V, and the voltage fluctuation is a voltage of about 1/10 of the drive pulse.
  • the drive pulse has a voltage of about several V, and the voltage is variable from the initial voltage to the end voltage at a predetermined step voltage, and the voltage fluctuation is characterized by a voltage of about 1/1000 of the drive pulse. And.
  • a larger resistance change is realized by superimposing a voltage having a fluctuation component on the drive signal that drives the analog resistance change element. That is, the resistance can be changed by the drive pulse of a lower voltage, so that the power consumption can be reduced.
  • the flattening of the low resistance (SET) process and the high resistance (RESET) process is realized. Smooth resistance changes improve controllability, improve the efficiency of correction processing in the brain-type information processing process, for example, correction of various errors for elements and circuits, and as a result, reduce the power consumption of the brain-type information processing circuit. And high speed can be realized.
  • the drive signal in addition to the method of continuously applying a drive pulse of a constant voltage, the voltage of the drive pulse can be variably applied for each step voltage.
  • FIG. 1 is a diagram showing a structural example of a resistance changing element according to an embodiment.
  • FIG. 2 is a plan view showing a structural example of an analog resistance changing element included in the information processing apparatus according to the embodiment.
  • FIG. 3 is a cross-sectional view of a contact hole portion located at the C point portion of FIG.
  • FIG. 4 is a diagram showing an enlarged cross-sectional TEM image of the oxide layer portion shown in FIG.
  • FIG. 5 is a chart showing a characteristic measurement result when voltage fluctuation is superimposed on the drive signal of the analog resistance changing element according to the embodiment.
  • FIG. 6 is a chart illustrating the reproducibility of the superimposition effect of the voltage fluctuation applied to the embodiment. (Part 1)
  • FIG. 1 is a diagram showing a structural example of a resistance changing element according to an embodiment.
  • FIG. 2 is a plan view showing a structural example of an analog resistance changing element included in the information processing apparatus according to the embodiment.
  • FIG. 3 is a cross-sectional view of
  • FIG. 7 is a chart illustrating the reproducibility of the superimposition effect of the voltage fluctuation applied to the embodiment.
  • FIG. 8 is a diagram showing a mounting example of the analog resistance changing element of the embodiment.
  • FIG. 9 is a diagram showing a mounting example of the analog resistance changing element of the embodiment.
  • Part 2 FIG. 10 is a chart showing characteristic measurement results when the analog resistance changing element according to another embodiment is driven by another driving method.
  • FIG. 1 is a diagram showing an example of the structure of RAND according to the embodiment.
  • RAND101 has a structure in which an insulating oxide layer is sandwiched between electrodes.
  • the upper electrode (TE) 111 and the lower electrode (BE) 112 are titanium nitride TiN, respectively, and the oxide layer (MO) 113 is TaOx (tantalum pentoxide).
  • the oxide layer (MO) 113 has one layer or a plurality of layers of two or more.
  • the MO 113 is composed of two layers, MO1 (TaOx-L) 113-1 and MO2 (TaOx-H) 113-2.
  • TaOx-L and TaOx-H are Ta oxide films having different resistivityes, and the resistivity is TaOx-L ⁇ TaOx-H.
  • oxide layer (MO) 113 By forming the oxide layer (MO) 113 as a layer having a plurality of resistivity, more desired resistance change characteristics can be obtained.
  • the resistance change in RAND101 is based on the redox reaction induced by the current.
  • the conductance increases in the process of lowering the resistance (Set), and the conductance decreases in the process of increasing the resistance (Reset).
  • FIG. 2 is a plan view showing a structural example of an analog resistance changing element included in the information processing apparatus according to the embodiment.
  • the RAND 101 is arranged on the Si substrate 200.
  • a Drive voltage is applied to TE111 of RAND101.
  • MO oxide layer
  • FIG. 3 is a cross-sectional view of a contact hole portion located at point C in FIG. 2.
  • a 100 nm thermal oxide film (SiO 2 ) 300 is formed on the Si substrate 200.
  • a Si substrate 200 with a thermal oxide film of 100 nm can be used.
  • BE112 of RAND101 is provided on the Si substrate 200 with a thermal oxide film.
  • Two layers of MO1 (TaOx-L) 113-1 and MO2 (TaOx-H) 113-2 having different resistivity as shown in FIG. 1 are provided on the BE 112 as the oxide layer (MO) 113.
  • An insulating film 305 such as silicon oxide (SiO 2 ) is provided on the Si substrate 200, and the insulating film 305 is provided between the BE 112 and the MO 113 and covers the TE 111.
  • a part of TE111 and a part of BE112 are derived to the front surface of the insulating film 305, respectively.
  • MO113 shown in FIG. 3 is composed of two layers of MO113-1 and 113-2, has a recess (contact hole) at point C, and is joined to BE112.
  • RAND101 forms one circuit system from point A to point E in FIG.
  • FIG. 4 is a diagram showing an enlarged cross-sectional TEM image of the oxide layer portion shown in FIG. An image taken by a transmission electron microscope TEM (Transmission Electron Microscope) is shown, and the oxide layer 113 at the point C portion in FIG. 3 is enlarged.
  • Two layers of MO1 (TaOx-L) 113-1 and MO2 (TaOx-H) 113-2 are laminated as an oxide layer (MO) 113 on a TiN layer corresponding to BE1 and BE2 (112). ..
  • the oxide layer (MO) 113 can be appropriately selected so as to obtain a desired resistance value.
  • a TiN layer corresponding to TE111 is laminated on the MO 113, and an insulating film 405 (SiO 2 ) and a protective carbon film (C film) are formed on the TiN layer.
  • the layer thickness of TE111 is 60 nm
  • the layer thickness of two layers MO1 (TaOx-L) 113-1 and MO2 (TaOx-H) 113-2 is 30 nm, respectively
  • the layer thickness of BE112 is 20 nm.
  • the concave portion point C in FIG. 2, contact hole
  • the concave portion is 100 nm ⁇ 100 nm when viewed in a plane.
  • the oxide layer (MO) 113 is a Ta oxide film on the lower electrode (BE) 112 side. Set a large resistivity.
  • the oxide layer (MO) 113 has an upper electrode TE (111) and a lower electrode (BE). It has the same structure as the area of the interface with 112.
  • one of the oxide layer MO1 (113-1) and the oxide layer MO2 (113-2) is 1000 mOhm ( Set m ⁇ ) cm or more and the other to less than 1000 mOhm (m ⁇ ) cm. Further, the oxide layer MO1 (113-1) and the oxide layer MO2 (113-2) may be arranged on either the upper or lower layer.
  • the resistivity of the oxide layer (MO) 113 has a positive correlation with x of TaOx, and the film thickness can be reduced.
  • MO1 (113-1) and MO2 (113-2) the oxide layer (TaOx-H) having a high resistivity has a film thickness of 20 to 20 when the x of TaOx is 2 or more and 2.2 or less.
  • x of 40 nm and TaOx exceeds 2.2, it can be set to 3 to 10 nm.
  • x of TaOx is less than 2.
  • the oxide layer (MO) 113 has two layers of MO1 (113-1) and MO2 under different conditions for the amount of oxygen in the reactive sputtering gas between MO1 (113-1) and MO2 (113-2). (113-2) and (113-2) are continuously formed into a film.
  • an annealing treatment may be performed in which the substrate is heated to 100 to 300 ° C. in a state of being assisted by radicals generated by applying RF power to argon gas containing oxygen.
  • x may be set to be larger than 2 on the side of MO1 (113-1) and MO2 (113-2) having a large amount of oxygen.
  • the pair of electrodes TE (111) and BE (112) are TiN, and the oxide layer (MO) 113 is TaOx, but the present invention is not limited to this.
  • the electrodes TE and BE can be appropriately selected from the metals of Pt, Au, Cu, TiAlN, TaN, W, Ir, and Ru, and the oxide layer MO can be HfOx, AlOx, SiOx, WOx, ZrOx in addition to TiOx.
  • These dielectrics and their compounds, or oxides and oxynitrides of electrodes can be selected.
  • the analog resistance changing element 100 forms a RAND 101 on a Si substrate 200.
  • a Drive voltage is applied to TE111 of RAND101, and BE112 is grounded.
  • the TiN film as the lower electrode (BE) 112 can be formed, for example, by reactive sputtering with Ar / N 2 gas using a Ti target. In addition, it can be formed by sputtering using a TiN ceramic target, chemical vapor deposition (CVD), and atomic layer deposition (ALD).
  • the lower electrode (BE) 112 is not limited to TiN, and TaN, W, Pt, and Ir may be used.
  • the lower electrode (BE) 112 is patterned by photolithography and reactive ion etching.
  • the entire front surface including the pattern of the lower electrode (BE) 112 is coated with the insulating film 305 of SiO 2 by CVD.
  • a hole structure (contact hole) C to be an element is formed on the insulating film (SiO 2) 305 on the lower electrode (BE) 112.
  • This hole structure C can be formed by lithography and etching on the insulating film 305.
  • the oxide layer (MO) 113 and the upper electrode 111 are patterned by lithography and reactive ion etching.
  • the entire front surface including the oxide layer (MO) 113 and the upper electrode 111 is coated with the insulating film 305 of SiO 2.
  • contact electrodes that are part of the upper electrode (TE) and the lower electrode (BE) are formed on the front surface, respectively.
  • the contact electrode has a Ti adhesion layer on the substrate side and an Au / Ti laminated structure in which Au is laminated on the Ti adhesion layer.
  • it can also be formed by a mixture of Au and Ti, Al or the like.
  • pattern drawing may be performed using a method such as electron beam lithography or nanoimprinting.
  • polishing processing by ion milling may be performed.
  • the element structure may be formed by lift-off, not limited to simply scraping.
  • a voltage fluctuation having a minute voltage height is superimposed on the drive voltage (Set / Reset pulse) for driving the analog resistance changing element 100 with respect to the voltage value of the drive voltage.
  • the voltage fluctuation can be sufficiently effective at a voltage sufficiently lower than the drive voltage, for example, a voltage value less than 1/10 of the drive voltage.
  • the voltage fluctuation superimposed on the drive signal is, for example, white noise or Gaussian noise that can be easily generated in an electronic circuit.
  • the frequency band (Bandwidth) is 30 MHz and the voltage amplitude (Amplitude) is 100 mVpp. (Peek to peak).
  • the type of voltage fluctuation may be, in addition to white noise, various waveforms such as repetition of a predetermined waveform, for example, a sine wave (sine wave), a triangular wave, or a square wave.
  • the voltage fluctuation is not limited as long as it gives a fluctuation to the drive pulse of the voltage that drives the resistance change. Further, it is desirable that the frequency of the voltage fluctuation has a time determined as the reciprocal thereof equal to or less than the drive pulse width.
  • FIG. 5 is a diagram showing a characteristic measurement result when voltage fluctuation is superimposed on the drive signal for the analog resistance changing element according to the embodiment.
  • the horizontal axis is time (number of pulses), and the vertical axis is current value ( ⁇ A).
  • the drive signal (pulse condition) supplied to the analog resistance changing element 100 was 1.95 V for Set, ⁇ 2.05 V for Set, and a cycle of 100 ns.
  • the voltage fluctuation superimposed on the drive signal is Gaussian Noise
  • the frequency band is 30 MHz
  • the voltage amplitude is 100 mVpp.
  • FIG. 5A shows a state in which only the drive signal is supplied to the analog resistance changing element 100 (that is, an existing drive state), and shows a state in which the drive voltage (Set / Reset) for three cycles is applied.
  • FIG. 5A shows a characteristic that the resistance is lowered by the Set pulse in one cycle and the current value is continuously increased correspondingly. Further, the resistance is increased by the Reset pulse, and the current value is continuously decreased.
  • This state is measured as a phenomenon in which the current value changes in a sawtooth shape with respect to the number of pulses on the horizontal axis.
  • the current change amount iOFF in the Set process and the Reset process is 1 ⁇ A or less. Further, it is shown that the amount of change in current, that is, the magnitude of change in analog resistance tends to increase as the pulsed voltage value increases as long as the element is not destroyed.
  • the current waveform for each of the applied pulses P1 to Pn is not continuous. High resistance may occur when a pulse is applied in the process of low resistance.
  • the current value repeatedly rises and falls each time a pulse is applied. For example, it is a disordered (irregular) waveform in which the current value rises in the pulse P2 after the pulse P1, the current value falls in the pulse P3, and then the current value rises in the pulse P4.
  • the current value does not rise (increase) smoothly in the Set process, but shows a discontinuous (irregular) change.
  • the current value does not smoothly decrease (decrease) and shows irregular changes as in the Set process.
  • FIG. 5B shows the characteristics when the voltage fluctuation is superimposed (ON) on the drive signal. It is shown that even in the drive signal (pulse condition) in which the current change amount iOFF is only 1 ⁇ A or less, the current change amount iON is increased by superimposing the voltage fluctuation with a slight fluctuation width of 100 mVpp.
  • the voltage (100 mVpp) applied as the voltage fluctuation is a voltage sufficiently lower than the drive voltage (Set: 1.95 V, Reset: -2.05 V), for example, a voltage value less than 1/10 of the drive voltage. Sufficient effect has been obtained.
  • the change state of the current value becomes smoother (continuous, one side of the serrated waveform) as shown in FIGS. 5 (b) and 5 (c) each time the measurement is repeated. Was observed to become flat).
  • the fluctuation width of the voltage fluctuation is larger than, for example, the current fluctuation value in the discontinuous waveform shown in the partial enlargement of FIG. 5 (a) (for example, the current fluctuation value when a pair of drive pulses P1-P2 is applied).
  • the current change in the Set process and the Reset process can be continuously performed. That is, the voltage fluctuation may be a voltage fluctuation that causes a sufficiently small current fluctuation as compared with the current change of the element caused by the drive pulse of the voltage required for the analog resistance change.
  • the resistance value of the analog resistance changing element 100 appears as the reciprocal of the change in the current value. Therefore, according to the embodiment, the change in the resistance value of the analog resistance changing element 100 can be smoothed by superimposing the voltage fluctuation on the drive signal. At the same time, the amount of current change can be increased.
  • a smooth resistance change can be obtained by removing noise of the resistance change component in the analog resistance change element 100, and the power consumption and speed of the product-sum circuit can be reduced and increased. Become.
  • FIG. 6 is a chart illustrating the reproducibility of the superimposition effect of the voltage fluctuation applied to the embodiment.
  • the voltage fluctuation application conditions were Gaussian Noise
  • the frequency band (Bandwidth) was 30 MHz
  • the voltage amplitude (Amplitude) was 100 mVpp.
  • the drive voltage (Set / Reset voltage) of the analog resistance changing element 100 is set to a lower voltage condition than the example (optimal condition) of FIG. 5, Set is 1.85 V, Set is -1. The cycle is .95V and 100ns.
  • FIG. 6A is a state in which the voltage fluctuation is superimposed on the drive signal (ON)
  • FIG. 6B is a state in which the voltage fluctuation is not superimposed on the drive signal (OFF).
  • the application of the drive voltage (Set / Reset) shows the state of 3 cycles (measured 13 times).
  • FIGS. 6 (c) to 6 (e) show a state in which the superimposition (ON) of the high voltage fluctuation is continued.
  • FIG. 6D shows a state in which the drive voltage is applied for 3 cycles (measured 15 times)
  • FIG. 6 (e) shows a state in which the drive voltage is applied for 8 cycles (measured 8 times).
  • FIG. 7 is a chart illustrating the reproducibility of the superimposition effect of the voltage fluctuation applied to the embodiment.
  • the conditions for applying the voltage fluctuation were a sine wave (Sin Noise), a frequency band (Bandwidth) of 30 MHz, and a voltage amplitude (Amplitude) of 100 mVpp.
  • FIG. 7 shows a state in which the superimposition of the voltage fluctuation shown in FIG. 7A is ON, and thereafter, FIG. 7B shows a state in which the superimposition of the voltage fluctuation is OFF and the superimposition is repeatedly turned ON / OFF. It should be noted that FIGS. 7 (f) and 7 (g) show a state in which ON is continued.
  • the drive voltage (Set / Reset voltage) of the analog resistance changing element 100 is set to a lower voltage condition than in the example of FIG. 6, Set is 1.80 V, Set is -1. The cycle is .85V and 200ns.
  • the analog resistance changing element 100 is used during the period when the voltage fluctuation superimposition is ON, regardless of whether the voltage fluctuation superimposition is continuously turned ON or ON / OFF is repeated. It has been shown that the change in the current value of can be a smooth and stable sawtooth waveform.
  • FIG. 8 and 9 are diagrams showing a mounting example of the analog resistance changing element of the embodiment.
  • FIG. 8 is a configuration example using the selection transistor 802, which is a typical circuit configuration used for a product-sum circuit or the like.
  • An analog resistance changing element 100 constituting a memory cell and a selection transistor 802 are connected between the bit line (BL) and the source line (SL).
  • the source of the selection transistor 802 is connected to the source line (SL), the drain is connected to one end of the analog resistance changing element 100, and the other end of the analog resistance changing element 100 is connected to the bit line (BL).
  • a drive driver (WL Driver) 801 is connected to the gate of the selection transistor 802 via a word line (WL).
  • the drive driver 801 superimposes and supplies a drive signal (Set / Reset pulse) and a voltage fluctuation to the selection transistor 802. That is, the drive driver can be configured by adding a function of generating the above-mentioned voltage fluctuation and superimposing it on the drive signal to the existing drive signal (Set / Reset pulse) generation function of 801.
  • the present invention does not depend on whether the resistance change is an analog type or a digital type. Therefore, even for a normal non-volatile memory, the voltage fluctuation is superimposed on the drive signal to make it non-volatile. It is effective in reducing the operating voltage of the non-volatile memory.
  • FIG. 9 is an example of a crosspoint type cell configuration, in which analog resistance changing elements 100 are arranged in a matrix at each crosspoint of a plurality of word lines (WL) and a plurality of bit lines (BL) intersecting each other.
  • the bit line decoder 902 selects one bit line (BL) corresponding to the supplied address
  • the word line decoder 903 selects one word line (WL).
  • the voltage pulse / fluctuation generation circuit 901 superimposes and supplies a drive signal (Set / Reset pulse) and a voltage fluctuation to the analog resistance changing element 100 selected on the cross point. That is, the voltage pulse / fluctuation generation circuit 901 can be configured by adding a function of generating the voltage fluctuation described above and superimposing it on the drive signal to the existing drive signal (Set / Reset pulse) generation function. Here, the voltage pulse / fluctuation generation circuit 901 may superimpose the voltage fluctuation on either the word line (WL) or the bit line (BL), or one of them.
  • a plurality of analog resistance changing elements are formed in RAND units, and an arbitrary analog resistance changing element 100 is selected for each cross point. And can be operated.
  • the present invention can be applied to various drive circuits having a function of superimposing voltage fluctuations on drive signals.
  • the voltage fluctuation is a voltage sufficiently lower than the drive voltage, for example, a voltage value less than 1/10 of the drive voltage, the power required to drive the analog resistance changing element 100 is reached.
  • the increase can be suppressed, and the increase in the power consumption of the drive circuit and the information processing device can be suppressed.
  • a drive method is used in which a drive pulse having a constant voltage is continuously applied to the analog resistance changing element 100 at a predetermined cycle.
  • the driving method of the analog resistance changing element 100 is different.
  • the applied voltage having a predetermined pulse width is varied from the initial value to the ending voltage for each predetermined step voltage.
  • the conditions for applying the drive pulse in the Set process are an initial value (Initial Voltage) of 1 V, a step voltage (Voltage Step) of 0.05 V, a supply pulse number (No. of Pulse) of 13, and an end voltage (Finish). Voltage) is 1.6 V, and the pulse width (Pulse Wid) is 5 ⁇ s.
  • initial value Initial Voltage
  • step voltage Voltage Step
  • supply pulse number No. of Pulse
  • Finish end voltage
  • Voltage is 1.6 V
  • the pulse width (Pulse Wid) is 5 ⁇ s.
  • the drive pulse in the Set process is 1 V for the analog resistance changing element 100 in the Reset state
  • the second pulse is 1.05 V, 1.1 V, ..., 1.55 V.
  • increases by 0.05V and the final pulse becomes 1.6V.
  • the voltage may be applied under the conditions for applying the drive pulse opposite to that in the Set process.
  • FIG. 10 is a chart showing the characteristic measurement results when the analog resistance changing element according to another embodiment is driven by another driving method.
  • the horizontal axis is the resistance value of the analog resistance changing element 100 under the application condition of the drive pulse (Resistance [k ⁇ ], and the vertical axis is the Weibull plot (Ln [Ln (1 / (1-F (R_i))). ]).
  • the analog resistance changing element 100 is in the low resistance state.
  • the measurement was repeated under the condition of the presence or absence of high frequency noise.
  • the resistance value at the time when the drive voltage was 1.3 V was weibull plotted, and the variation in the resistance value was evaluated.
  • Measurement is 1. No high frequency noise 50 times, 2. With high frequency noise (Gaussian noise 1 mV, 20 MHz) 55 times, 3. No high frequency noise 50 times, 4. It was set to 50 times with high frequency noise (Gaussian noise 1 mV, 2 MHz). 1.2.3.4. The reproducibility of the measurement was made by alternately performing the measurement in the order of, that is, the measurement without high frequency noise and with high frequency noise.
  • the driving condition is the condition with noise 2.4.
  • the condition without noise 1.3 It was clarified that the resistance distribution became smaller as the resistance became lower than that. As described above, the small resistance distribution makes it possible for the analog resistance changing element 100 of the other embodiment to suppress the current variation.
  • the voltage of the high frequency noise can be made lower than that of the above-described embodiment.
  • the drive pulse is about several V (for example, ⁇ 2 V), and the voltage fluctuation (high frequency noise) is about 1/10 of the drive pulse (for example, ⁇ 100 mV).
  • the drive pulse is several V (for example, ⁇ 1 V to ⁇ 1.6 V), while the voltage fluctuation (high frequency noise) is 1/1000 of the drive pulse (for example, ⁇ 1 mV), which is much lower. can do.
  • the resistance value corresponding to each step voltage is changed. Can be obtained with good reproducibility. For example, even if Set / Reset is repeated, when the drive pulse is 1.2V, a predetermined resistance value corresponding to this 1.2V can always be obtained.
  • the information processing apparatus includes an analog resistance changing element composed of a pair of electrodes and an oxide layer provided between the pair of electrodes, and an analog resistance changing element. It is provided with a drive circuit that superimposes and supplies a voltage fluctuation having a fluctuation component on the drive signal. According to such a configuration, it becomes possible to suppress a sudden resistance change in the process of lowering the resistance (SET) and the process of increasing the resistance (RESET) when the analog resistance changing element is driven.
  • the drive circuit generates a drive pulse having a predetermined voltage as a drive signal, and as a voltage fluctuation, from the current fluctuation value in a discontinuous waveform generated when the resistance value of the analog resistance changing element changes based on the drive pulse.
  • the drive pulse has a constant voltage of about several V, and the voltage fluctuation can be a voltage of about 1/10 of the drive pulse.
  • the drive pulse may be about ⁇ 2 V, and the voltage fluctuation may be about ⁇ 100 mV at a frequency of 30 MHz, and the drive voltage can be suppressed.
  • the drive pulse is a voltage of about several V
  • the voltage can be varied from the initial voltage to the end voltage at a predetermined step voltage
  • the voltage fluctuation can be a voltage of about 1/1000 of the drive pulse.
  • the high frequency noise can be any of Gaussian noise, white noise, sine wave, triangular wave, and square wave. As described above, various general-purpose noises can be used as the voltage fluctuation.
  • the analog resistance changing element can be connected to the selection transistor in memory cell units, and the drive circuit can be configured to supply the drive signal in which the voltage fluctuation is superimposed to the selection transistor.
  • the analog resistance changing element is arranged at a plurality of cross points where the word line and the bit line intersect, the analog resistance changing element is driven and selected by the word line decoder and the bit line decoder, and the drive circuit is the word line decoder.
  • it can be configured to supply a drive signal in which voltage fluctuations are superimposed to one of the bit line decoders.
  • a plurality of analog resistance changing elements can be easily selectively driven by using a general-purpose circuit configuration.
  • the drive signal for driving the analog resistance change element is superposed with the voltage fluctuation and supplied, and the power consumption at the time of driving is reduced and the resistance change process is achieved.
  • Flattening can be achieved.
  • the noise of the resistance change component can be removed, the resistance change becomes smooth, and the power consumption and the speed of the product-sum circuit can be reduced and increased. Further, it becomes possible to simultaneously obtain low power consumption and high reliability of the analog resistance changing element.
  • the present invention can be applied to electronic devices and information processing devices equipped with artificial intelligence, particularly brain-type information processing devices used in the field of edge computing.

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Abstract

Ce dispositif de traitement d'informations de type cerveau comprend un élément à changement de résistance analogique composé d'une paire d'électrodes et d'une couche d'oxyde disposée entre la paire d'électrodes, et un circuit de pilotage qui superpose et fournit des fluctuations de tension qui présentent des composantes de fluctuation sur/à des signaux de pilotage de l'élément à changement de résistance analogique. En superposant des fluctuations de tension qui provoquent des fluctuations de courant dans les signaux de pilotage, il est possible de réduire au minimum les changements de résistance irréguliers dans un processus d'abaissement de résistance (SET) et dans un processus d'augmentation de résistance (RESET) pendant le pilotage de l'élément à changement de résistance analogique. Du fait de la minimisation de la caractéristique de changement de résistance irrégulier, le bruit de la composante de changement de résistance peut être éliminé, le changement de résistance devient lisse, la consommation d'énergie du dispositif de traitement d'informations de type cerveau peut être réduite, et la vitesse du dispositif peut être augmentée.
PCT/JP2021/019882 2020-06-19 2021-05-25 Dispositif de traitement d'informations et procédé de pilotage de dispositif de traitement d'informations WO2021256197A1 (fr)

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WO2023181624A1 (fr) * 2022-03-22 2023-09-28 ソニーセミコンダクタソリューションズ株式会社 Mémoire non volatile, dispositif de stockage, et procédé de commande de mémoire non volatile

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JP2003283003A (ja) * 2002-03-27 2003-10-03 Sharp Corp 集積回路装置及びニューロ素子
WO2018100790A1 (fr) * 2016-11-30 2018-06-07 国立研究開発法人科学技術振興機構 Circuit neuronal, système et circuit de commutation

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US9342780B2 (en) * 2010-07-30 2016-05-17 Hewlett Packard Enterprise Development Lp Systems and methods for modeling binary synapses
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FR3007867B1 (fr) * 2013-06-26 2018-02-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Neurone artificiel comprenant une memoire resistive
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JP2003283003A (ja) * 2002-03-27 2003-10-03 Sharp Corp 集積回路装置及びニューロ素子
WO2018100790A1 (fr) * 2016-11-30 2018-06-07 国立研究開発法人科学技術振興機構 Circuit neuronal, système et circuit de commutation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023181624A1 (fr) * 2022-03-22 2023-09-28 ソニーセミコンダクタソリューションズ株式会社 Mémoire non volatile, dispositif de stockage, et procédé de commande de mémoire non volatile

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