WO2021244234A1 - 一种单晶炉热场结构、单晶炉及晶棒 - Google Patents
一种单晶炉热场结构、单晶炉及晶棒 Download PDFInfo
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- WO2021244234A1 WO2021244234A1 PCT/CN2021/093007 CN2021093007W WO2021244234A1 WO 2021244234 A1 WO2021244234 A1 WO 2021244234A1 CN 2021093007 W CN2021093007 W CN 2021093007W WO 2021244234 A1 WO2021244234 A1 WO 2021244234A1
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- Prior art keywords
- single crystal
- crucible
- crystal furnace
- heater
- thermal field
- Prior art date
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- 239000013078 crystal Substances 0.000 title claims abstract description 72
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 239000007770 graphite material Substances 0.000 claims description 8
- 239000012774 insulation material Substances 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 5
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 42
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 22
- 238000000034 method Methods 0.000 description 11
- 229910002804 graphite Inorganic materials 0.000 description 9
- 239000010439 graphite Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Definitions
- This application relates to the technical field of ingot preparation, and in particular to a single crystal furnace thermal field structure, a single crystal furnace and an ingot.
- Silicon carbide (SiC) deposition due to the existence of chemical reactions, the thickness of the heater will gradually decrease with the increase in the number of uses, which directly leads to the change of the material properties of the heater surface and the heating performance of the heater itself due to the thickness change Problems such as reduction will eventually reduce the service life of the heater and directly affect the quality of the product.
- the present application provides a single crystal furnace thermal field structure, a single crystal furnace and ingot rods, which can solve the problem of damage to the heater caused by the gas mixed with harmful impurities in the furnace in the related technology, which in turn affects the service life of the heater and even affects the preparation The quality of the product.
- An embodiment of the present application provides a single crystal furnace thermal field structure, including:
- a side heater, the side heater is arranged on the periphery of the crucible;
- the flow guide assembly is arranged between the side heater and the side wall of the crucible and below the crucible, and is used to form a gas flow channel with the outer wall of the crucible, and the gas The flow channel communicates with the outside of the furnace body to discharge gas outside the furnace body.
- the flow guide assembly includes a side heat conduction cylinder, a bottom heat conduction plate, and an exhaust cylinder
- the side heat conduction cylinder is disposed between the side heater and the crucible
- the bottom heat conduction plate is disposed Below the crucible
- the bottom end of the side heat conduction cylinder is sealed and connected to the bottom heat conduction plate
- the bottom heat conduction plate is provided with at least one exhaust hole
- the exhaust cylinder penetrates the exhaust In the hole, one end of the exhaust cylinder is connected to the gas flow channel, and the other end extends outside the furnace body.
- it also includes:
- the bottom heater, the bottom heater is arranged under the bottom heat conducting plate.
- the number of the exhaust holes is four, the four exhaust holes are arranged at intervals on the same circumference, and each exhaust hole is provided with an exhaust cylinder.
- the side heat conduction cylinder and the bottom heat conduction plate are made of graphite material.
- the graphite material is graphene.
- it also includes:
- a vacuum pump which is connected to an end of the exhaust cylinder protruding outside the furnace body, and is used to extract gas in the gas flow channel.
- it also includes:
- the filtering device is arranged between the exhaust cylinder and the vacuum pump, and is used for filtering impurity particles in the gas.
- it also includes:
- a side heat insulating material layer, the side heat insulating material layer is arranged between the side heater and the side wall of the furnace body;
- the bottom heat insulation material layer is arranged between the bottom heater and the bottom wall of the furnace body.
- it also includes:
- the deflector tube is arranged above the crucible.
- an embodiment further provides a single crystal furnace.
- the single crystal furnace includes a furnace body and a crucible arranged in the center of the furnace body, and further includes the single crystal furnace thermal field structure as described above.
- the gas passing into the single crystal furnace can be guided and discharged out of the furnace through the formed gas flow channel, so as to isolate and protect the heater in the furnace to avoid entrapment in the gas.
- the silicon monoxide caused damage to the heater, thereby increasing the service life of the heater in the furnace and ensuring the normal operation of the heater.
- FIG. 1 is a schematic structural diagram of a single crystal furnace thermal field structure provided by an embodiment of the application
- FIG. 2 is a schematic diagram of the arrangement relationship between the bottom heater and the exhaust cylinder provided by an embodiment of the application;
- Fig. 3 is a schematic cross-sectional view taken along the A-A section in Fig. 2.
- the exhaust port is arranged at the upper position of the side insulation tube, so that the gas does not flow through the side heater and the bottom thermal field components, so as to protect the heater and the lower thermal field.
- the specific implementation of this method is extremely complicated.
- the design of the side vent will greatly increase the number of types of thermal field accessories and the difficulty of design, which directly leads to an increase in cost; in addition, under this structure, the airflow containing silicon monoxide Crystals will be generated in the thermal field components above the liquid level, and once the crystals fall into the melt, they will directly cause the crystals to lose their single crystal characteristics, resulting in product waste.
- an embodiment of the present application provides a single crystal furnace thermal field structure.
- the single crystal furnace thermal field structure is applied to a single crystal furnace.
- the single crystal furnace includes a furnace body 13 and The crucible in the inner center of the body 13, the single crystal furnace thermal field structure may include: a side heater 3 and a flow guide assembly, wherein the side heater 3 is arranged on the periphery of the crucible, that is, the furnace body 13 Between the inner wall and the crucible, the side heater 3 is used to heat the crucible on the outer side of the crucible; the guide assembly is arranged between the side heater 3 and the side wall of the crucible and below the crucible, It is used to form a gas flow channel with the outer wall of the crucible, and the gas flow channel communicates with the outside of the furnace body to discharge the gas out of the furnace body 13, that is to say, the guide assembly and the outer wall of the crucible form a gas flow When the gas is introduced into the furnace, the gas will be discharged from the
- the flow guide assembly may include a side heat conduction cylinder 1, a bottom heat conduction plate 2 and an exhaust cylinder 6, wherein the side heat conduction cylinder 1 is arranged between the side heater 3 and the crucible, That is, the side heat conduction cylinder 1 is arranged around the periphery of the crucible, and the bottom heat conduction plate 2 is arranged below the crucible. At least one exhaust hole is opened on the top, and the exhaust cylinder 6 is inserted into the exhaust hole, and one end of the exhaust cylinder 6 is connected to the gas flow channel, and the other end extends out of the furnace body 13; ,
- the side heat conduction cylinder 1, the bottom heat conduction plate 2 and the outer wall of the crucible form a gas flow channel.
- the side heater 3 Since the side heater 3 is located on the periphery of the side heat conduction cylinder 1, the gas flow channel and the side heater 3 are located respectively The two sides of the side heat conduction cylinder 1 are isolated by the side heat conduction cylinder 1, and the bottom heat conduction plate 2 is provided with an exhaust hole. By piercing the exhaust cylinder 6 in the exhaust hole, the gas flow channel can be connected to the The outside of the furnace body 13 is conducted so that the gas can flow out of the furnace body 13 from the gas flow channel smoothly.
- the single crystal furnace thermal field structure further includes a bottom heater 4, which is used to heat the crucible from the bottom of the crucible, and the bottom heater 4 is arranged under the bottom heat conducting plate 2. Therefore, the gas flow channel and the bottom heater 4 are respectively located on both sides of the bottom heat conducting plate 2 and are isolated by the bottom heat conducting plate 2 so as to prevent harmful substances such as silicon monoxide entrapped in the gas from damaging the bottom heater 4.
- the number of vent holes opened on the bottom heat conducting plate 2 may be four, and the four vent holes are arranged at intervals on the same circumference, and each vent hole is penetrated with an exhaust cylinder 6 Therefore, the gas flow channel can quickly and efficiently discharge the gas out of the furnace body 13 through the four exhaust cylinders 6 described above.
- the number of exhaust holes can be increased or decreased according to different requirements.
- the exhaust cylinder 6 needs to pass through the plane where the bottom heater 4 is located.
- the specific arrangement depends on the actual shape and structure of the bottom heater 4, for example, the heating area of the bottom heater 4
- the exhaust cylinder 6 can be arranged on the periphery of the bottom heater 4, and when the heating area of the bottom heater 4 is large, it is necessary to provide an exhaust hole on the bottom heater 4 so that the exhaust cylinder 6 can pass through .
- the side heat-conducting cylinder 1 and the bottom heat-conducting plate 2 are made of graphite material.
- the graphite material should have high thermal conductivity, usually the thermal conductivity can reach 1500W/MK, so as to ensure the side heater 3 and the heat generated by the bottom heater 4 can quickly pass through the side heat conduction cylinder 1 and the bottom heat conduction plate 2 to reach the crucible, so as not to affect the heating efficiency and heating capacity of the side heater 3 and the bottom heater 4, and Avoid affecting the thermal field distribution generated by the side heater 3 and the bottom heater 4; and the graphite material has high temperature resistance, stable chemical properties, and corrosion resistance, which can adapt to the high temperature scene in the single crystal furnace and has a long service life.
- the graphite material may include graphene, and graphene has very good thermal conductivity.
- the single crystal furnace thermal field structure further includes a filter device (not shown in the figure), and the filter device is arranged between the exhaust cylinder 6 and the vacuum pump for filtering the flow. Impurity particles in the passed gas to avoid pollution.
- the single crystal furnace thermal field structure further includes: a side insulation material layer 71 and a bottom insulation material layer 72, and the side insulation material layer 71 is disposed on the side heater 3 and Between the inner side walls of the furnace body 13; and the bottom insulation material layer 72 is arranged between the bottom heater 4 and the bottom wall of the furnace body 13, and the side insulation material layer 71 and the bottom insulation material layer 72 can play a role Good heat insulation effect prevents the heat in the furnace body 13 from radiating outside.
- the uppermost side heat-insulating material layer 71 also plays a role in blocking the gas in the furnace.
- the length of the side heat-conducting cylinder 1 can also be appropriately extended to protect the side heat-insulating material layer 71 Isolation protection is also carried out.
- the single crystal furnace thermal field structure further includes a deflector tube 14, which is arranged above the crucible, and the crucible includes a graphite crucible 11 and is arranged at the top of the crucible.
- the quartz crucible 10 in the graphite crucible 11 the bottom of the graphite crucible 11 is connected to the crucible shaft 12, and the crucible shaft 12 is used to drive the crucible to rotate so that the inside of the crucible is heated evenly.
- the seed crystal is pulled to grow the crystal to obtain the ingot 8; in the process of pulling the seed crystal, the ingot 8 and Inert gas is introduced into the gap between the guide cylinders 14, as shown in the gas flow trajectory 5 in the figure, the inert gas flows to the solid-liquid interface under the diversion action of the guide cylinder 14 to control the temperature of the solid-liquid interface. Then it flows into the gas flow channel, and finally flows out of the furnace from the bottom of the furnace body 13 through the exhaust cylinder 6.
- the side The heater 3 and the bottom heater 4 are well insulated and protected, thereby avoiding the damage of the side heater 3 and the bottom heater 4 by silicon monoxide, and improving the service life of the side heater 3 and the bottom heater 4 It also avoids the instability of the process and the problem of product quality caused by the surface properties and thickness changes of the side heater 3 and the bottom heater 4, and also prevents the melt from splashing to the side heater 3 and the side heater during the secondary feeding process.
- the gas flow law in the furnace is controllable, which facilitates effective management of the solid-liquid interface temperature through inert gas.
- the single crystal furnace includes a furnace body and a crucible arranged in the center of the furnace body.
- the single crystal furnace further includes: the single crystal as described above.
- Furnace thermal field structure Because the thermal field structure of the single crystal furnace in the above embodiment can guide the gas passing into the single crystal furnace out of the furnace through the formed gas flow channel, so as to isolate and protect the heater in the furnace and avoid the entrapment in the gas. Silicon monoxide damages the heater, thereby increasing the service life of the heater in the furnace and ensuring the normal operation of the heater. Therefore, the single crystal furnace in the embodiment of the present application also has the above-mentioned beneficial effects. In order to avoid repetition, it is not here. Repeat it again.
- an embodiment also provides an ingot, which is prepared by using the single crystal furnace as described above, and the ingot prepared by using the single crystal furnace is higher in quality and has fewer defects.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
- Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
- Furnace Details (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (12)
- 一种单晶炉热场结构,应用于单晶炉,所述单晶炉包括炉体和设置于所述炉体内部中央的坩埚,包括:侧部加热器,所述侧部加热器设置于所述坩埚外围;导流组件,所述导流组件围设于所述侧部加热器和所述坩埚的侧壁之间以及所述坩埚的下方,用于与所述坩埚的外壁形成气体流动通道,所述气体流动通道与所述炉体的外部连通以将气体排出所述炉体外。
- 根据权利要求1所述的单晶炉热场结构,其中,所述导流组件包括侧部导热筒、底部导热板和排气筒,所述侧部导热筒设置于所述侧部加热器和所述坩埚之间并包围所述坩埚的侧壁,所述底部导热板设置于所述坩埚下方,所述侧部导热筒的底端与所述底部导热板密封连接,所述底部导热板上开设有至少一个排气孔,所述排气筒穿设于所述排气孔内,所述排气筒的一端连通所述气体流动通道,另一端伸出于所述炉体外。
- 根据权利要求2所述的单晶炉热场结构,其中,还包括:底部加热器,所述底部加热器设置于所述底部导热板的下方。
- 根据权利要求2所述的单晶炉热场结构,其中,所述排气孔的数量为四个,四个所述排气孔在同一圆周上间隔布设,每一所述排气孔内设置有一所述排气筒。
- 根据权利要求2所述的单晶炉热场结构,其中,所述侧部导热筒和所述底部导热板采用石墨材料制成。
- 根据权利要求5所述的单晶炉热场结构,其中,所述石墨材料为石墨烯。
- 根据权利要求2所述的单晶炉热场结构,其中,还包括:真空泵,所述真空泵与所述排气筒伸出于所述炉体外的一端连接,用于抽取气体流动通道内的气体。
- 根据权利要求7所述的单晶炉热场结构,其中,还包括:过滤装置,所述过滤装置设置于所述排气筒和所述真空泵之间,用于过滤气体中的杂质颗粒。
- 根据权利要求3所述的单晶炉热场结构,其中,还包括:侧部隔热材料层,所述侧部隔热材料层设置于所述侧部加热器和所述炉体的内侧壁之间;底部隔热材料层,所述底部隔热材料层设置于所述底部加热器和所述炉体的底壁之间。
- 根据权利要求1所述的单晶炉热场结构,其中,还包括:导流筒,所述导流筒设置于所述坩埚上方。
- 一种单晶炉,所述单晶炉包括炉体和设置于所述炉体内部中央的坩埚,其中,还包括:如权利要求1-10中任一项所述的单晶炉热场结构。
- 一种晶棒,其中,所述晶棒采用如权利要求11所述的单晶炉制备得到。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US17/603,928 US20220307156A1 (en) | 2020-06-05 | 2021-05-11 | Single Crystal Pulling Apparatus Hot-Zone Structure, Single Crystal Pulling Apparatus and Crystal Ingot |
JP2022542035A JP2023509531A (ja) | 2020-06-05 | 2021-05-11 | 単結晶炉のホットゾーン構造、単結晶炉及び結晶棒 |
DE112021000041.1T DE112021000041T5 (de) | 2020-06-05 | 2021-05-11 | Einkristall-ziehvorrichtung-heisszonenstruktur, einkristall-ziehvorrichtung und kristallblock |
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CN202010505348.1 | 2020-06-05 | ||
CN202010505348.1A CN113755944A (zh) | 2020-06-05 | 2020-06-05 | 一种单晶炉热场结构、单晶炉及晶棒 |
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DE (1) | DE112021000041T5 (zh) |
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CN110699667A (zh) * | 2019-11-25 | 2020-01-17 | 美尔森银河新材料(烟台)有限公司 | 一种炭炭坩埚生产装置 |
CN115074829B (zh) * | 2022-07-13 | 2024-01-26 | 西安奕斯伟材料科技股份有限公司 | 拉晶炉 |
CN115852483B (zh) * | 2023-02-27 | 2023-05-16 | 杭州天桴光电技术有限公司 | 一种制备圆饼状氟化镁晶体镀膜材料的装置和方法 |
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CN110592660A (zh) * | 2019-09-11 | 2019-12-20 | 上海新昇半导体科技有限公司 | 一种晶体生长装置 |
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JPH0214989A (ja) * | 1989-05-16 | 1990-01-18 | Yamaha Motor Co Ltd | 自動二輪車のフレーム |
DE19628851A1 (de) * | 1996-07-17 | 1998-01-22 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung eines Einkristalls |
TWI265217B (en) * | 2002-11-14 | 2006-11-01 | Komatsu Denshi Kinzoku Kk | Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal |
JP4730937B2 (ja) * | 2004-12-13 | 2011-07-20 | Sumco Techxiv株式会社 | 半導体単結晶製造装置および製造方法 |
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2021
- 2021-05-11 DE DE112021000041.1T patent/DE112021000041T5/de active Pending
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- 2021-05-11 KR KR1020217035390A patent/KR20210137220A/ko not_active Application Discontinuation
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- 2021-05-11 WO PCT/CN2021/093007 patent/WO2021244234A1/zh active Application Filing
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CN110592660A (zh) * | 2019-09-11 | 2019-12-20 | 上海新昇半导体科技有限公司 | 一种晶体生长装置 |
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JP2023509531A (ja) | 2023-03-08 |
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KR20210137220A (ko) | 2021-11-17 |
DE112021000041T5 (de) | 2022-04-28 |
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US20220307156A1 (en) | 2022-09-29 |
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