JP2023509531A - 単結晶炉のホットゾーン構造、単結晶炉及び結晶棒 - Google Patents
単結晶炉のホットゾーン構造、単結晶炉及び結晶棒 Download PDFInfo
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 20
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- 239000011261 inert gas Substances 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
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- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
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Abstract
Description
本開示は、2020年6月5日に中国で出願された中国特許出願番号202010505348.1の優先権を主張し、その内容の全ては、参照により本開示に組み込まれる。
本開示は、結晶棒の製造の技術分野に関し、具体的には、単結晶炉のホットゾーン構造、単結晶炉、及び結晶棒に関する。
本開示の一様態の実施例は、
前記坩堝の外周に設置される側部ヒーターと、
前記側部ヒーターと前記坩堝の側壁との間及び前記坩堝の下方を囲んで設けられ、前記坩堝の外壁との間にガス流路を形成するための導流部材と、を備え、
前記ガス流路が前記炉体の外部に連通されて、ガスを前記炉体の外部に排出する、単結晶炉のホットゾーン構造を提供する。
前記底部ヒーターと前記炉体の底壁との間に設けられる底部断熱材層と、をさらに備える。
本開示の実施例に係る単結晶炉のホットゾーン構造によれば、形成されるガス流路により単結晶炉内に流入するガスを、炉外に案内して排出し、これにより炉内のヒーターに対して隔離保護を行い、ガス中に巻き込まれた一酸化ケイ素がヒーターにダメージを与えることを防止することで、炉内のヒーターの耐用年数を向上させ、ヒーターが正常に作動するように確保する。
Claims (12)
- 単結晶炉に適用され、単結晶炉のホットゾーン構造であって、
前記単結晶炉は、炉体と、前記炉体の内部中央に設置される坩堝と、を備え、
前記単結晶炉のホットゾーン構造は、
前記坩堝の外周に設置される側部ヒーターと、
前記側部ヒーターと前記坩堝の側壁との間及び前記坩堝の下方を囲んで設けられ、前記坩堝の外壁との間にガス流路を形成するための導流部材と、を備え、
前記ガス流路が前記炉体の外部に連通されて、前記ガスを前記炉体の外部に排出する、単結晶炉のホットゾーン構造。 - 前記導流部材は、側部伝熱バレルと、底部伝熱板と、排気バレルと、を備え、前記側部伝熱バレルが前記側部ヒーターと前記坩堝との間に設置され、かつ前記坩堝の側壁を囲み、前記底部伝熱板が前記坩堝の下方に設置され、前記側部伝熱バレルの底端が前記底部伝熱板に密封接続され、前記底部伝熱板に少なくとも1つの排気孔が設けられており、前記排気バレルが前記排気孔内に穿設され、前記排気バレルの一端が前記ガス流路に連通され、他端が前記炉体の外に伸び出す、請求項1に記載の単結晶炉のホットゾーン構造。
- 前記底部伝熱板の下方に設置される底部ヒーターをさらに備える、請求項2に記載の単結晶炉のホットゾーン構造。
- 前記排気孔の数は四つであり、四つの前記排気孔が同一円周で間隔を置いて配列され、各前記排気孔内に一つの前記排気バレルが設置される、請求項2に記載の単結晶炉のホットゾーン構造。
- 前記側部伝熱バレルと前記底部伝熱板とが黒鉛材料からなる、請求項2に記載の単結晶炉のホットゾーン構造。
- 前記黒鉛材料はグラフェンである、請求項5に記載の単結晶炉のホットゾーン構造。
- 前記排気バレルが前記炉体の外に伸び出す一端に接続され、ガス流路内のガスを抽出するための真空ポンプをさらに備える、請求項2に記載の単結晶炉のホットゾーン構造。
- 前記排気バレルと前記真空ポンプとの間に設置され、ガス中の不純物粒子を濾過するためのフィルタ装置をさらに備える、請求項7に記載の単結晶炉のホットゾーン構造。
- 前記側部ヒーターと前記炉体の内側壁との間に設けられる側部断熱材層と、
前記底部ヒーターと前記炉体の底壁との間に設けられる底部断熱材層と、をさらに備える、請求項3に記載の単結晶炉のホットゾーン構造。 - 前記坩堝の上方に設置される導流バレルをさらに備える、請求項1に記載の単結晶炉のホットゾーン構造。
- 炉体と、前記炉体の内部中央に設置される坩堝と、を備え、請求項1~10のいずれか一項に記載の単結晶炉のホットゾーン構造をさらに備える、単結晶炉。
- 請求項11に記載の前記単結晶炉で製造される、結晶棒。
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CN202010505348.1 | 2020-06-05 | ||
CN202010505348.1A CN113755944A (zh) | 2020-06-05 | 2020-06-05 | 一种单晶炉热场结构、单晶炉及晶棒 |
PCT/CN2021/093007 WO2021244234A1 (zh) | 2020-06-05 | 2021-05-11 | 一种单晶炉热场结构、单晶炉及晶棒 |
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CN110699667A (zh) * | 2019-11-25 | 2020-01-17 | 美尔森银河新材料(烟台)有限公司 | 一种炭炭坩埚生产装置 |
CN115074829B (zh) * | 2022-07-13 | 2024-01-26 | 西安奕斯伟材料科技股份有限公司 | 拉晶炉 |
CN115852483B (zh) * | 2023-02-27 | 2023-05-16 | 杭州天桴光电技术有限公司 | 一种制备圆饼状氟化镁晶体镀膜材料的装置和方法 |
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JPH0214898A (ja) * | 1988-06-30 | 1990-01-18 | Kawasaki Steel Corp | シリコン単結晶製造装置 |
JPH0214989A (ja) * | 1989-05-16 | 1990-01-18 | Yamaha Motor Co Ltd | 自動二輪車のフレーム |
DE19628851A1 (de) * | 1996-07-17 | 1998-01-22 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung eines Einkristalls |
TWI265217B (en) * | 2002-11-14 | 2006-11-01 | Komatsu Denshi Kinzoku Kk | Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal |
JP4730937B2 (ja) * | 2004-12-13 | 2011-07-20 | Sumco Techxiv株式会社 | 半導体単結晶製造装置および製造方法 |
KR101044124B1 (ko) * | 2008-11-21 | 2011-06-28 | 주식회사 엘지실트론 | 실리콘 단결정 잉곳 제조장치의 클리닝 방법 및 클리닝 모듈 |
EP2801551A1 (en) * | 2013-05-08 | 2014-11-12 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Graphene with very high charge carrier mobility and preparation thereof |
JP6528710B2 (ja) * | 2016-04-11 | 2019-06-12 | 株式会社Sumco | シリコン試料の炭素濃度測定方法およびシリコン単結晶インゴットの製造方法 |
CN110592661A (zh) * | 2019-09-11 | 2019-12-20 | 上海新昇半导体科技有限公司 | 一种晶体生长装置 |
CN110592660A (zh) * | 2019-09-11 | 2019-12-20 | 上海新昇半导体科技有限公司 | 一种晶体生长装置 |
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DE112021000041T5 (de) | 2022-04-28 |
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