WO2021238726A1 - 可拉伸显示面板及其制备方法、显示装置 - Google Patents

可拉伸显示面板及其制备方法、显示装置 Download PDF

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Publication number
WO2021238726A1
WO2021238726A1 PCT/CN2021/094412 CN2021094412W WO2021238726A1 WO 2021238726 A1 WO2021238726 A1 WO 2021238726A1 CN 2021094412 W CN2021094412 W CN 2021094412W WO 2021238726 A1 WO2021238726 A1 WO 2021238726A1
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Prior art keywords
slope
layer
buffer layer
flexible substrate
isolation
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PCT/CN2021/094412
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English (en)
French (fr)
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赵佳
刘政
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京东方科技集团股份有限公司
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Priority to US17/761,523 priority Critical patent/US20220367426A1/en
Publication of WO2021238726A1 publication Critical patent/WO2021238726A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5387—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a stretchable display panel, a preparation method thereof, and a display device.
  • the present disclosure provides a stretchable display panel, a preparation method thereof, and a display device.
  • the present disclosure discloses a stretchable display panel, which includes an island area provided with display devices, a bridge area provided with traces, and a hole area.
  • An isolation area is provided on the edge of the island area and/or the bridge area
  • the isolation region includes a slope layer and a plurality of isolation pillars arranged along the slope of the slope layer.
  • the ramp layer includes a flexible substrate and a first buffer layer provided on the flexible substrate, and the plurality of isolation pillars are provided on the first buffer layer.
  • the slope angle of the inclined surface of the flexible substrate is greater than 0 degrees and less than or equal to 30 degrees.
  • the slope angle of the slope of the first buffer layer is smaller than the slope angle of the slope of the flexible substrate.
  • it further includes a second buffer layer located between the flexible substrate and the first buffer layer, and the second buffer layer does not overlap with the plurality of isolation pillars.
  • it further includes a second buffer layer located between the flexible substrate and the first buffer layer, and the second buffer layer does not overlap the slope surface of the first buffer layer.
  • it further includes a patterned photoresist layer, and the patterned photoresist layer is located on the second buffer layer.
  • the isolation pillar includes at least one of a spacer layer, a planarization layer, and a source/drain layer.
  • the isolation region further includes a luminescent material layer covering the plurality of isolation pillars, and an encapsulation layer covering the luminescent material layer.
  • the present disclosure also discloses a method for preparing a stretchable display panel, the method including:
  • the preset process includes: expanding the hole pattern on the second buffer layer; half-etching the portion of the flexible substrate where the expanded hole pattern is exposed.
  • the forming a hole pattern on the second buffer layer includes:
  • the portion of the second buffer layer where the patterned photoresist layer is exposed is etched to form a hole pattern.
  • the method before or after half-etching the portion of the flexible substrate where the hole pattern is exposed, the method further includes:
  • the photoresist layer is etched in a direction away from the hole pattern to expose a part of the second buffer layer.
  • the expanding the hole pattern on the second buffer layer includes:
  • the etching the portion of the second buffer layer where the photoresist layer is exposed includes:
  • the part of the second buffer layer where the photoresist layer is exposed is etched by tetrafluoromethane gas.
  • the half-etching the portion of the flexible substrate where the hole pattern is exposed includes:
  • the portion of the flexible substrate where the hole pattern is exposed is half-etched by oxygen gas.
  • the slope angle of the slope of the slope layer is positively correlated with the number of executions of the preset process.
  • the slope angle of the slope of the slope layer is positively correlated with the etching duration of the half-etching of the portion of the flexible substrate where the expanded hole pattern is exposed.
  • the forming a plurality of isolation pillars along the slope of the slope layer includes: forming an isolation pillar film material on the slope of the slope layer, and forming the plurality of isolation pillars located in the isolation region through a patterning process .
  • the present disclosure also discloses a display device including the above-mentioned stretchable display panel.
  • Figure 1 shows a top view of a related stretchable display panel
  • Figure 2 shows a cross-sectional view of a related stretchable display panel
  • FIG. 3 shows a cross-sectional view of a stretchable display panel according to an embodiment of the present disclosure
  • FIG. 4 shows another cross-sectional view of a stretchable display panel according to an embodiment of the present disclosure
  • FIG. 5 shows a flow chart of the steps of a method for manufacturing a stretchable display panel according to an embodiment of the present disclosure
  • FIG. 6 shows a schematic diagram of a panel after a patterned photoresist layer is formed on the second buffer layer according to an embodiment of the present disclosure
  • FIG. 7 shows a schematic diagram of a panel after a portion of the second buffer layer exposed to the patterned photoresist layer is etched to form a hole pattern according to an embodiment of the present disclosure
  • FIG. 8 shows an embodiment of the present disclosure to etch the photoresist layer in a direction away from the hole pattern to expose a part of the second buffer layer, and half-etch the portion of the flexible substrate where the hole pattern is exposed.
  • FIG. 9 shows a schematic diagram of a panel after expanding the hole pattern on the second buffer layer according to an embodiment of the present disclosure
  • FIG. 10 shows a schematic diagram of a panel after the photoresist layer is etched away from the expanded hole pattern to expose a part of the second buffer layer according to an embodiment of the present disclosure
  • FIG. 11 shows a schematic diagram of a panel after continuing to expand the hole pattern on the second buffer layer according to an embodiment of the present disclosure
  • FIG. 12 shows a method of continuing to etch the photoresist layer in a direction away from the expanded hole pattern to expose a part of the second buffer layer and expose the hole pattern to the flexible substrate according to an embodiment of the present disclosure.
  • FIG. 13 shows a method of forming a hole area in a flexible substrate according to an embodiment of the present disclosure, and forming a substrate slope at the edge of the island area for arranging display devices and/or at the edge of the bridge area for arranging traces Schematic diagram of the rear panel;
  • FIG. 14 shows a schematic diagram of a panel after stripping the photoresist layer according to an embodiment of the present disclosure
  • FIG. 15 shows a schematic diagram of a panel after forming a first buffer layer covering the slope of the substrate according to an embodiment of the present disclosure, and obtaining the slope layer;
  • FIG. 16 shows a schematic diagram of a panel after a plurality of isolation pillars are formed along the slope of the slope layer according to an embodiment of the present disclosure.
  • FIG. 1 a top view of a stretchable display panel is shown.
  • FIG. 2 a cross-sectional view of a stretchable display panel is shown.
  • the stretchable display panel includes a display panel.
  • isolation pillars 12 are usually arranged at the edge of the island area 01 or the bridge area 02, as shown in FIG. 2, to prevent over-stretching.
  • the crack extends to the display device area, thereby causing damage to the display device.
  • the space for the spacers at the edge of the panel is somewhat insufficient, and therefore, the crack isolation effect of the panel is poor.
  • the encapsulation distance at the edge of the panel is short, which makes the encapsulation effect of the panel poor.
  • FIG. 3 shows a cross-sectional view of a stretchable display panel according to an embodiment of the present disclosure.
  • the stretchable display panel includes an island area 01 provided with a display device A, and a bridge area 02 provided with a trace B , And the hole area 03, the edge of the island area 01 and/or the bridge area 02 is provided with an isolation area 10, the isolation area 10 includes a slope layer 11 and a plurality of isolation areas arranged along the slope of the slope layer 11 Column 12.
  • the isolation region 10 at the edge of the island region 01 and/or the bridge region 02 may be set as a slope layer 11 having a slope, so that the isolation column 12 may be disposed along the slope of the slope layer 11.
  • FIG. 4 shows another cross-sectional view of the stretchable display panel of the embodiment of the present disclosure. Based on the viewing angle of FIG. The length of the slope of the layer 11 may be c.
  • the width of the isolation area of the stretchable display panel provided by the embodiments of the present disclosure can be larger, reaching (more than the ). Therefore, in the embodiment of the present disclosure, the inclined surface can increase the space for placing the isolation columns at the edge of the panel, so that more isolation columns can be placed in the space for the isolation column placement, and the crack isolation effect of the panel is enhanced. In addition, since the width of the isolation area of the panel is increased, that is, the packaging distance at the edge of the panel is extended, and therefore, the packaging effect of the panel is enhanced.
  • the ramp layer 11 includes a flexible substrate 111 and a first buffer layer 112 disposed on the flexible substrate 111, and the plurality of isolation pillars 12 are disposed on the first buffer layer. 112 on.
  • the flexible substrate 111 can ensure the stretchability of the panel, and the first buffer layer 112 can act as a buffer between the flexible substrate 111 and the isolation column 12.
  • the slope angle ⁇ of the inclined surface of the flexible substrate 111 is greater than 0 degrees and less than or equal to 30 degrees.
  • the slope angle of the inclined plane is the angle between the inclined plane and the horizontal plane.
  • the slope angle ⁇ of the slope of the flexible substrate 111 can be controlled to be greater than 0 degrees and less than or equal to 30 degrees, that is, the slope of the slope layer 11 can be set to be gentler, and it can be set on a gentler slope.
  • More isolation pillars 12 can further enhance the crack isolation effect of the panel, and the packaging distance at the edge of the panel is further extended. Therefore, the packaging effect of the panel can be further enhanced.
  • the slope angle of the slope of the first buffer layer is smaller than the slope angle of the slope of the flexible substrate.
  • the slope angle of the slope of the first buffer layer is the angle between the slope of the first buffer layer and the slope of the flexible substrate.
  • the slope angle of the slope of the first buffer layer is smaller than the slope angle of the flexible substrate, so that the overall slope of the slope layer 11 can be set slowly, so that more isolation columns 12 can be arranged on the slope layer 11 to further enhance the display panel. Crack isolation effect.
  • the isolation column 12 may be made of a metal material and/or an organic material, which is not specifically limited in the embodiment of the present disclosure.
  • the isolation region 10 may also include a conventional film structure such as a luminescent material layer covering the isolation pillar 12 and an encapsulation layer covering the luminescent material layer, which is not specifically limited in the embodiment of the present disclosure.
  • the luminescent material layer covering the isolation pillar 12, that is, the luminescent material layer of the display device portion extends to the portion of the isolation region 10.
  • the stretchable display panel includes an island area provided with display devices, a bridge area provided with traces, and a hole area.
  • the island area and/or the edge of the bridge area is provided with an isolation area, and the isolation area includes A slope layer and a plurality of isolation pillars arranged along the slope of the slope layer.
  • the isolation area at the edge of the panel can be set as a slope layer with a slope, and a plurality of isolation columns can be arranged on the slope of the slope layer. More isolation columns are placed in the space for the isolation column, which enhances the crack isolation effect of the panel.
  • the width of the isolation area of the panel is increased, that is, the packaging distance of the edge of the panel is extended, and therefore, the packaging effect of the panel is enhanced.
  • FIG. 5 there is shown a step flow chart of a manufacturing method of a stretchable display panel according to an embodiment of the present disclosure.
  • the manufacturing method includes the following steps:
  • Step 501 Provide a flexible substrate.
  • the flexible substrate 111 can be selected from flexible materials such as polyimide (PI), which is not specifically limited in the embodiment of the present disclosure.
  • PI polyimide
  • Step 502 forming a second buffer layer on the flexible substrate.
  • a second buffer layer 013 that functions as a buffer may be formed on the flexible substrate 111.
  • the second buffer layer 013 can be selected from SiNx, SiOx, and other materials, which are not specifically limited in the embodiment of the present disclosure.
  • Step 503 forming a hole pattern on the second buffer layer.
  • this step can be implemented in the following manners, including: forming a patterned photoresist layer on the second buffer layer; exposing the patterned photoresist layer to the second buffer layer The part is etched to form a hole pattern.
  • a photoresist can be coated on the second buffer layer 013, and then a patterned photoresist layer 00 can be formed on the second buffer layer 013 through process processes such as exposure, development, and etching, as shown in FIG. Show.
  • the portion of the second buffer layer 013 that exposes the patterned photoresist layer 00 can be etched, so that a hole pattern can be formed on the second buffer layer 013, as shown in FIG. 7. 7, after the hole pattern is etched on the second buffer layer 013, the edge of the second buffer layer 013 close to the hole pattern can naturally form a certain slope.
  • the step of etching the portion of the second buffer layer that exposes the patterned photoresist layer to form a hole pattern may specifically include: The methane gas etches the portion of the second buffer layer where the patterned photoresist layer is exposed to form a hole pattern.
  • tetrafluoromethane (CF 4 ) gas can be used to perform inductively coupled plasma (ICP) etching on the portion of the second buffer layer 013 that exposes the photoresist layer 00.
  • ICP inductively coupled plasma
  • the second buffer layer 013 is etched by tetrafluoromethane gas, so that damage to the photoresist layer 00 and the flexible substrate 111 can be avoided.
  • Step 504 Half-etch the portion of the flexible substrate where the hole pattern is exposed.
  • the following step may be further included: through an ashing process, the photoresist layer is etched in a direction away from the hole pattern to A part of the second buffer layer is exposed.
  • the photoresist layer 00 can be etched in a direction away from the hole pattern through an ashing process to expose a part of the second buffer layer 013, that is, the photoresist layer 00 can be indented, as shown in FIG. 8 shown.
  • the shrinking of the photoresist layer 00 is for the subsequent etching of the second buffer layer 013.
  • the flexible substrate 111 will also have a certain risk of shrinking, that is to say, there is a risk of shrinking. There is a risk that the pattern of the etched flexible substrate 111 will be damaged, and the shrinking of the photoresist layer 00 before this step can avoid the risk of shrinking of the flexible substrate 111.
  • this step may be specifically implemented in the following manner, including: half-etching the portion of the flexible substrate where the hole pattern is exposed by oxygen gas.
  • a plasma reactive ion etching (Plasma Reactive Ion Etching, Plasma RIE) process can be used to perform oxygen (O 2 ) gas on the portion of the flexible substrate 111 that exposes the hole pattern in a direction perpendicular to the panel. Half-etched, as shown in Figure 8. By etching the flexible substrate 111 with oxygen gas, damage to the second buffer layer 013 can be avoided.
  • Plasma RIE plasma reactive ion etching
  • Step 505 Perform at least one preset process until a hole area is formed in the flexible substrate, and a substrate is formed at the edge of the island area for arranging display devices and/or at the edge of the bridge area for arranging wiring Slope; wherein, the preset process includes: expanding the hole pattern on the second buffer layer; half-etching the portion of the flexible substrate where the expanded hole pattern is exposed.
  • the step of expanding the hole pattern on the second buffer layer may specifically include: engraving the portion of the second buffer layer where the photoresist layer is exposed. eclipse.
  • the part of the second buffer layer 013 close to the hole area exposes the photoresist layer 00.
  • the part of the second buffer layer 013 exposed to the photoresist layer 00 can be etched away, so that the second buffer layer 013 is exposed to the photoresist layer 00.
  • the hole pattern on the buffer layer 013 is enlarged, as shown in FIG. 9.
  • the step of etching the portion of the second buffer layer that exposes the photoresist layer may specifically include: exposing the photoresist to the second buffer layer through tetrafluoromethane gas Part of the layer is etched.
  • tetrafluoromethane gas can be used to perform inductively coupled plasma (ICP) etching on the portion of the second buffer layer 013 that exposes the photoresist layer 00.
  • ICP inductively coupled plasma
  • the second buffer layer 013 is etched by tetrafluoromethane gas, so that damage to the photoresist layer 00 and the flexible substrate 111 can be avoided.
  • the method may further include the following step: applying an ashing process to the photoresist The layer is etched in a direction away from the expanded hole pattern to expose part of the second buffer layer.
  • the photoresist layer 00 can be etched in a direction away from the hole pattern through an ashing process to expose a part of the second buffer layer 013, that is, the photoresist layer 00 can be indented, as shown in FIG. 10 shown.
  • the shrinking of the photoresist layer 00 is to etch the second buffer layer 013 again.
  • the shrinking of the photoresist layer 00 before this step can avoid the risk of shrinking of the flexible substrate 111.
  • the step of half-etching the portion of the flexible substrate where the expanded hole pattern is exposed may specifically include: exposing the expanded hole to the flexible substrate through oxygen gas Part of the area pattern is half-etched.
  • a Plasma RIE process can be used to half-etch the portion of the flexible substrate 111 where the expanded hole pattern is exposed through oxygen gas in a direction perpendicular to the panel, as shown in FIG. 10.
  • the flexible substrate 111 is etched by oxygen gas to avoid damage to the second buffer layer 013.
  • the preset process can be repeated again to expand the hole pattern on the second buffer layer 013, as shown in FIG. 11, and half-etch the portion of the flexible substrate 111 where the expanded hole pattern is exposed, as shown in FIG. 12 shown.
  • the slope of the flexible substrate 111 becomes slower every time the preset process is passed through.
  • the preset process can be performed at least once until a hole area is formed on the flexible substrate 111, and formed on the edge of the island area for arranging the display device and/or on the edge of the bridge area for arranging the wiring.
  • Substrate ramp A as shown in Figure 13.
  • the slope angle of the substrate slope A is positively correlated with the execution times of the preset process, that is, the more the preset process is executed, the greater the slope angle of the substrate slope A is.
  • the slope angle of the substrate slope A is positively correlated with the etching time of half-etching the portion of the flexible substrate 111 that exposes the expanded hole pattern, that is, the flexible substrate 111 exposes the expanded hole pattern.
  • the preset process can be performed at least once until the desired slope angle of the substrate slope is reached while the hole area is formed. It should be noted that since the hole area needs to penetrate the panel, it is possible to expose the enlarged flexible substrate 111 to the flexible substrate 111 when the portion of the flexible substrate 111 corresponding to the hole area is very thin when the preset process is performed for the last time. The part of the hole pattern is fully etched to form the hole. Of course, it is also possible to perform full etching on the portion of the flexible substrate 111 corresponding to the hole area after the last execution of the preset process is completed to form the hole area, which is not specifically limited in the embodiment of the present disclosure.
  • At least one preset process is performed, and a hole area 03 is formed in the flexible substrate 111, and a substrate slope A is formed at the edge of the island area for setting the display device and/or at the edge of the bridge area for setting the wiring. After that, the photoresist layer 00 can be stripped off, as shown in FIG. 14.
  • Step 506 forming a first buffer layer covering the slope of the substrate to obtain a slope layer.
  • Step 507 forming a plurality of isolation pillars along the slope of the slope layer.
  • a plurality of isolation pillars 12 may be formed on the slope of the slope layer, as shown in FIG. 16.
  • the isolation column film 014 can be formed on the slope of the slope layer first, and then a patterning process is used to form a plurality of isolation columns 12 located in the isolation region.
  • the isolation column film 014 on the slope of the ramp layer can be the PS (pad spacer) layer, PLN (planarization) layer of the display device part, and the SD (source drain) layer of the thin film transistor. At least one of them extends to a part of the slope of the slope layer, that is, the isolation pillar 12 may specifically include at least one of a PS layer, a PLN layer, and an SD layer.
  • the isolation column 12 is the PLN isolation column 12.
  • the isolation column 12 is the SD+PLN isolation column 12, where the SD+PLN isolation column 12
  • the SD layer can be arranged close to the slope layer, and the PLN layer in the SD+PLN isolation column 12 can be located on the side of the SD layer away from the slope layer.
  • the slope angle of the slope layer is largely determined by the slope angle of the substrate slope, optionally, the slope angle of the slope layer and the preset process
  • the number of executions is positively correlated.
  • the slope angle of the slope of the slope layer is positively correlated with the etching duration of the half-etching of the portion of the flexible substrate where the expanded hole pattern is exposed. Therefore, in practical applications, it is possible to increase the number of executions of the preset process within a reasonable range, and/or to perform half-etching on the part of the flexible substrate where the enlarged hole pattern is exposed, so as to obtain a slower time.
  • More isolation posts can be set on the gentler slope layer slope, so as to further enhance the crack isolation effect of the panel, and the packaging distance of the panel edge is further extended, therefore, the packaging effect of the panel can be further enhanced.
  • the preparation method may also include conventional steps such as forming an encapsulation layer, which is not specifically limited in the embodiment of the present disclosure.
  • a method for preparing a stretchable display panel may include: providing a flexible substrate; forming a second buffer layer on the flexible substrate; forming a hole pattern on the second buffer layer; The portion of the flexible substrate that exposes the pattern of the hole area is half-etched; at least one preset process is performed until the hole area is formed in the flexible substrate, and at the edge and/or of the island area where the display device is arranged. Or forming a substrate slope at the edge of the bridge area used for arranging traces; forming a first buffer layer covering the substrate slope to obtain a slope layer; forming a plurality of isolation pillars along the slope of the slope layer.
  • the preset process includes: expanding the hole pattern on the second buffer layer; half-etching the portion of the flexible substrate where the expanded hole pattern is exposed.
  • a slope layer can be formed in the isolation area at the edge of the island region and/or the bridge region of the stretchable display panel, and a plurality of isolation columns can be formed along the slope of the slope layer.
  • the inclined plane can increase the space for the isolation column at the edge of the panel, so that more isolation columns can be placed in the space for the isolation column, and the crack isolation effect of the panel is enhanced.
  • the width of the isolation area of the panel is increased, that is, the packaging distance of the edge of the panel is extended, and therefore, the packaging effect of the panel is enhanced.
  • the embodiment of the present disclosure also discloses a display device including the above-mentioned stretchable display panel.
  • the stretchable display panel includes an island area provided with display devices, a bridge area provided with traces, and a hole area.
  • the island area and/or the edge of the bridge area is provided with an isolation area, and the isolation area includes A slope layer and a plurality of isolation pillars arranged along the slope of the slope layer.
  • the isolation area at the edge of the panel can be set as a slope layer with a slope, and a plurality of isolation columns can be arranged on the slope of the slope layer. More isolation columns are placed in the space for the isolation column, which enhances the crack isolation effect of the panel.
  • the width of the isolation area of the panel is increased, that is, the packaging distance of the edge of the panel is extended, and therefore, the packaging effect of the panel is enhanced.

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Abstract

可拉伸显示面板及其制备方法、显示装置，涉及显示技术领域。其中，可拉伸显示面板包括设置有显示器件(A)的岛区(01)、设置有走线(B)的桥区(02)，以及孔区(03)，所述岛区(01)和/或所述桥区(02)的边缘设置有隔离区域(10)，所述隔离区域(10)包括斜坡层(11)以及沿所述斜坡层(11)的斜面设置的多个隔离柱(12)。

Description

可拉伸显示面板及其制备方法、显示装置
相关申请的交叉引用
本公开要求在2020年05月28日提交中国专利局、申请号为202010467790.X、名称为“一种可拉伸显示面板及其制备方法、显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及显示技术领域，特别是涉及一种可拉伸显示面板及其制备方法、显示装置。
背景技术
如今，随着人们对于显示装置的空间扩展性的要求越来越高，关于可拉伸显示面板的研究也越来越多，可拉伸显示面板正逐渐成为显示技术领域中一个重要的发展方向。
概述
本公开提供一种可拉伸显示面板及其制备方法、显示装置。
本公开公开了一种可拉伸显示面板，包括设置有显示器件的岛区、设置有走线的桥区，以及孔区，所述岛区和/或所述桥区的边缘设置有隔离区域，所述隔离区域包括斜坡层以及沿所述斜坡层的斜面设置的多个隔离柱。
可选地，所述斜坡层包括柔性衬底以及设置在所述柔性衬底上的第一缓冲层，所述多个隔离柱设置在所述第一缓冲层上。
可选地，所述柔性衬底的斜面坡度角大于0度，且小于或等于30度。
可选地，所述第一缓冲层的斜面坡度角小于所述柔性衬底的斜面坡度角。
可选地，还包括位于所述柔性衬底和所述第一缓冲层之间的第二缓冲层，所述第二缓冲层与所述多个隔离柱没有交叠。
可选地，还包括位于所述柔性衬底和所述第一缓冲层之间的第二缓冲层，所述第二缓冲层与所述第一缓冲层的斜坡面没有交叠。
可选地，还包括图案化的光刻胶层，所述图案化的光刻胶层位于所述第 二缓冲层上。
可选地，所述隔离柱包括垫隔物层、平坦化层和源漏极层中的至少一种。
可选地，所述隔离区域还包括覆盖所述多个隔离柱的发光材料层，以及覆盖所述发光材料层的封装层。
本公开还公开了一种可拉伸显示面板的制备方法，所述方法包括：
提供柔性衬底；
在所述柔性衬底上形成第二缓冲层；
在所述第二缓冲层上形成孔区图案；
对所述柔性衬底露出所述孔区图案的部分进行半刻蚀；
执行至少一次预设工艺，直至在所述柔性衬底形成孔区，以及在用于设置显示器件的岛区的边缘和/或在用于设置走线的桥区的边缘形成衬底斜坡；
形成覆盖所述衬底斜坡的第一缓冲层，得到斜坡层；
沿所述斜坡层的斜面形成多个隔离柱；
其中，所述预设工艺包括：扩大所述第二缓冲层上的孔区图案；对所述柔性衬底露出扩大后的所述孔区图案的部分进行半刻蚀。
可选地，所述在所述第二缓冲层上形成孔区图案，包括：
在所述第二缓冲层上形成图案化的光刻胶层；以及
对所述第二缓冲层露出所述图案化的光刻胶层的部分进行刻蚀，形成孔区图案。
可选地，所述对所述柔性衬底露出所述孔区图案的部分进行半刻蚀之前或之后，还包括：
通过灰化工艺，将所述光刻胶层沿远离所述孔区图案的方向进行刻蚀，以露出部分所述第二缓冲层。
可选地，所述扩大所述第二缓冲层上的孔区图案，包括：
对所述第二缓冲层露出所述光刻胶层的部分进行刻蚀。
可选地，所述对所述第二缓冲层露出所述光刻胶层的部分进行刻蚀，包括：
通过四氟甲烷气体对所述第二缓冲层露出所述光刻胶层的部分进行刻蚀。
可选地，所述对所述柔性衬底露出所述孔区图案的部分进行半刻蚀，包括：
通过氧气气体对所述柔性衬底露出所述孔区图案的部分进行半刻蚀。
可选地，所述斜坡层的斜面坡度角与所述预设工艺的执行次数呈正相关。
可选地，所述斜坡层的斜面坡度角与所述对所述柔性衬底露出扩大后的所述孔区图案的部分进行半刻蚀的刻蚀时长呈正相关。
可选地，所述沿所述斜坡层的斜面形成多个隔离柱，包括：在所述斜坡层的斜面上形成隔离柱膜材，通过构图工艺，形成位于隔离区域的所述多个隔离柱。
本公开还公开了一种显示装置，包括上述可拉伸显示面板。
上述说明仅是本公开技术方案的概述，为了能够更清楚了解本公开的技术手段，而可依照说明书的内容予以实施，并且为了让本公开的上述和其它目的、特征和优点能够更明显易懂，以下特举本公开的具体实施方式。
附图简述
为了更清楚地说明本公开实施例或相关技术中的技术方案，下面将对实施例或相关技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1示出了相关的一种可拉伸显示面板的俯视图；
图2示出了相关的一种可拉伸显示面板的截面图；
图3示出了本公开实施例的可拉伸显示面板的一种截面图；
图4示出了本公开实施例的一种可拉伸显示面板的另一种截面图；
图5示出了本公开实施例的一种可拉伸显示面板的制备方法的步骤流程图；
图6示出了本公开实施例的一种在第二缓冲层上形成图案化的光刻胶层后的面板示意图；
图7示出了本公开实施例的一种对第二缓冲层露出图案化的光刻胶层的部分进行刻蚀，形成孔区图案后的面板示意图；
图8示出了本公开实施例的一种将光刻胶层沿远离孔区图案的方向进行刻蚀，以露出部分第二缓冲层，以及对柔性衬底露出孔区图案的部分进行半刻蚀后的面板示意图；
图9示出了本公开实施例的一种扩大第二缓冲层上的孔区图案后的面板示意图；
图10示出了本公开实施例的一种将光刻胶层沿远离扩大后的孔区图案的方向进行刻蚀，以露出部分第二缓冲层后的面板示意图；
图11示出了本公开实施例的一种继续扩大第二缓冲层上的孔区图案后的面板示意图；
图12示出了本公开实施例的一种继续将光刻胶层沿远离扩大后的孔区图案的方向进行刻蚀，以露出部分第二缓冲层，以及对柔性衬底露出孔区图案的部分进行半刻蚀后的面板示意图；
图13示出了本公开实施例的一种在柔性衬底形成孔区，以及在用于设置显示器件的岛区的边缘和/或在用于设置走线的桥区的边缘形成衬底斜坡后的面板示意图；
图14示出了本公开实施例的一种剥离光刻胶层后的面板示意图；
图15示出了本公开实施例的一种形成覆盖衬底斜坡的第一缓冲层，得到斜坡层后的面板示意图；并且
图16示出了本公开实施例的一种沿斜坡层的斜面形成多个隔离柱后的面板示意图。
详细描述
为使本公开的上述目的、特征和优点能够更加明显易懂，下面结合附图和具体实施方式对本公开作进一步详细的说明。显然，所描述的实施例是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
参照图1，示出了一种可拉伸显示面板的俯视图，参照图2，示出了一种可拉伸显示面板的截面图，如图1所示，可拉伸显示面板包括设置有显示器件A的岛区01、设置有走线B的桥区02，以及用于提供变形的孔区03。在实际应用中，对于具有类似结构的可拉伸显示面板，通常在其岛区01或桥区02的边缘会设置隔离柱12，如图2所示，用来防止因拉伸过度所产生的裂纹延伸至显示器件区，从而造成显示器件的损坏。但是，对于上述可拉伸显示 面板，面板边缘的隔离柱放置空间有些不足，因此，面板的裂纹隔离效果较差。另外，面板边缘的封装距离较短，使得面板的封装效果较差。
图3示出了本公开实施例的可拉伸显示面板的一种截面图，参照图3，可拉伸显示面板包括设置有显示器件A的岛区01、设置有走线B的桥区02，以及孔区03，所述岛区01和/或所述桥区02的边缘设置有隔离区域10，所述隔离区域10包括斜坡层11以及沿所述斜坡层11的斜面设置的多个隔离柱12。
在本公开实施例中，可以将岛区01和/或桥区02边缘的隔离区域10设置为具有斜面的斜坡层11，从而隔离柱12可以沿斜坡层11的斜面设置。图4示出了本公开实施例的可拉伸显示面板的另一种截面图，基于图4的视角，斜坡层11的底边距离可以为a2，斜坡层11的最大高度可以为b，斜坡层11的斜面长度可以为c，同时参照图2，相关的可拉伸显示面板的隔离区域宽度为a1，在a1＝a2的情况下，本公开实施例提供的可拉伸显示面板的隔离区域宽度可以达到
Figure PCTCN2021094412-appb-000001
(大于a1)。而在a1＜a2的情况下，本公开实施例提供的可拉伸显示面板的隔离区域宽度则可以更大，达到
Figure PCTCN2021094412-appb-000002
(大于
Figure PCTCN2021094412-appb-000003
)。因此，在本公开实施例中，斜面可以增大面板边缘的隔离柱放置空间，从而可以在隔离柱放置空间放置更多的隔离柱，增强了面板的裂纹隔离效果。另外，由于面板的隔离区域宽度增大，也即是延长了面板边缘的封装距离，因此，增强了面板的封装效果。
可选地，参照图3，所述斜坡层11包括柔性衬底111以及设置在所述柔性衬底111上的第一缓冲层112，所述多个隔离柱12设置在所述第一缓冲层112上。
其中，柔性衬底111可保证面板的可拉伸性，第一缓冲层112可以在柔性衬底111与隔离柱12之间起缓冲作用。
可选地，参照图3，所述柔性衬底111的斜面坡度角α大于0度，且小于或等于30度。
其中，斜面坡度角也即斜面与水平面之间的角度。可以将柔性衬底111的斜面坡度角α控制在大于0度，且小于或等于30度的范围内，也即是可以将斜坡层11的坡度设置的较缓，较缓的斜面上便可以设置更多的隔离柱12，从而进一步增强面板的裂纹隔离效果，并且，面板边缘的封装距离进一步延 长，因此，还可以进一步增强面板的封装效果。
可选地，所述第一缓冲层的斜面坡度角小于所述柔性衬底的斜面坡度角。
其中，第一缓冲层的斜面坡度角，即第一缓冲层的斜面与柔性衬底的斜面之间的夹角。第一缓冲层的斜面坡度角小于柔性衬底的斜面坡度角，可以使得斜坡层11的整体坡度设置较缓，这样可以在斜坡层11上设置更多的隔离柱12，以进一步增强显示面板的裂纹隔离效果。
可选地，还包括位于所述柔性衬底和所述第一缓冲层之间的第二缓冲层，所述第二缓冲层与所述多个隔离柱没有交叠。其中，第二缓冲层与多个隔离柱没有交叠，即第二缓冲层与多个隔离柱没有接触，或者没有重叠。此外，第二缓冲层也可以与第一缓冲层的斜坡面没有交叠，即第二缓冲层与第一缓冲层的斜坡面没有接触，或者没有重叠。可选地，在具体应用中，隔离柱12可以采用金属材料和/或有机物材料，本公开实施例对此不作具体限定。
此外，隔离区域10还可以包括覆盖隔离柱12的发光材料层，以及覆盖发光材料层的封装层等常规膜层结构，本公开实施例对此不作具体限定。其中，覆盖隔离柱12的发光材料层也即显示器件部分的发光材料层延伸至隔离区域10的部分。
在本公开实施例中，可拉伸显示面板包括设置有显示器件的岛区、设置有走线的桥区，以及孔区，岛区和/或桥区的边缘设置有隔离区域，隔离区域包括斜坡层以及沿斜坡层的斜面设置的多个隔离柱。在本公开实施例中，可以将面板边缘的隔离区域设置为具有斜面的斜坡层，并在斜坡层的斜面上设置多个隔离柱，斜面可以增大面板边缘的隔离柱放置空间，从而可以在隔离柱放置空间放置更多的隔离柱，增强了面板的裂纹隔离效果。另外，由于面板的隔离区域宽度增大，也即是延长了面板边缘的封装距离，因此，增强了面板的封装效果。
参照图5，示出了本公开实施例的一种可拉伸显示面板的制备方法的步骤流程图，该制备方法包括以下步骤：
步骤501：提供柔性衬底。
在实际应用中，柔性衬底111可以选用聚酰亚胺(Polyimide，PI)等柔性材料，本公开实施例对此不作具体限定。
步骤502：在所述柔性衬底上形成第二缓冲层。
在本步骤中，可以在柔性衬底111上形成起缓冲作用的第二缓冲层013。在实际应用中，第二缓冲层013可以选用SiNx、SiOx等材料，本公开实施例对此不作具体限定。
步骤503：在所述第二缓冲层上形成孔区图案。
可选地，本步骤具体可以通过下述方式实现，包括：在所述第二缓冲层上形成图案化的光刻胶层；对所述第二缓冲层露出所述图案化的光刻胶层的部分进行刻蚀，形成孔区图案。
首先，可以在第二缓冲层013上涂覆光刻胶，然后可以通过曝光、显影、刻蚀等工艺流程，在第二缓冲层013上形成图案化的光刻胶层00，如图6所示。之后，可以对第二缓冲层013露出图案化的光刻胶层00的部分进行刻蚀，从而可以在第二缓冲层013上形成孔区图案，如图7所示。参照图7，在第二缓冲层013上刻蚀出孔区图案之后，第二缓冲层013靠近孔区图案的边缘可以自然地形成一定的坡度。
在本公开实施例中，可选地，所述对所述第二缓冲层露出所述图案化的光刻胶层的部分进行刻蚀，形成孔区图案的步骤，具体可以包括：通过四氟甲烷气体对所述第二缓冲层露出所述图案化的光刻胶层的部分进行刻蚀，形成孔区图案。
在实际应用中，可以通过四氟甲烷(CF 4)气体，对第二缓冲层013露出光刻胶层00的部分进行感应耦合等离子体(inductively coupled plasma，ICP)刻蚀。通过四氟甲烷气体对第二缓冲层013进行刻蚀，可以避免对光刻胶层00和柔性衬底111的损伤。
步骤504：对所述柔性衬底露出所述孔区图案的部分进行半刻蚀。
在本公开实施例中，可选地，在本步骤之前或之后，还可以包括以下步骤：通过灰化工艺，将所述光刻胶层沿远离所述孔区图案的方向进行刻蚀，以露出部分所述第二缓冲层。
其中，可以通过灰化工艺，将光刻胶层00沿远离孔区图案的方向进行刻蚀，以露出部分第二缓冲层013，也即是可以对光刻胶层00进行内缩，如图8所示。内缩光刻胶层00是为了后续对第二缓冲层013进行刻蚀，在本步骤之后内缩光刻胶层00，柔性衬底111也会存在一定的内缩风险，也即是存在半刻蚀后的柔性衬底111图案被破坏的风险，而在本步骤之前内缩光刻胶层 00，则可以避免柔性衬底111的内缩风险。
可选地，本步骤具体可以通过下述方式实现，包括：通过氧气气体对所述柔性衬底露出所述孔区图案的部分进行半刻蚀。
在实际应用中，可以采用等离子体反应离子刻蚀(Plasma Reactive Ion Etching，Plasma RIE)工艺，通过氧气(O 2)气体，对柔性衬底111露出孔区图案的部分沿垂直于面板的方向进行半刻蚀，如图8所示。通过氧气气体对柔性衬底111进行刻蚀，可以避免对第二缓冲层013的损伤。
步骤505：执行至少一次预设工艺，直至在所述柔性衬底形成孔区，以及在用于设置显示器件的岛区的边缘和/或在用于设置走线的桥区的边缘形成衬底斜坡；其中，所述预设工艺包括：扩大所述第二缓冲层上的孔区图案；对所述柔性衬底露出扩大后的所述孔区图案的部分进行半刻蚀。
在本公开实施例中，可选地，所述扩大所述第二缓冲层上的孔区图案的步骤，具体可以包括：对所述第二缓冲层露出所述光刻胶层的部分进行刻蚀。
在经过灰化工艺后，第二缓冲层013靠近孔区的部分露出光刻胶层00，之后，便可以将第二缓冲层013露出光刻胶层00的部分刻蚀掉，从而使得第二缓冲层013上的孔区图案得到扩大，如图9所示。
可选地，所述对所述第二缓冲层露出所述光刻胶层的部分进行刻蚀步骤，具体又可以包括：通过四氟甲烷气体对所述第二缓冲层露出所述光刻胶层的部分进行刻蚀。
在实际应用中，可以通过四氟甲烷气体，对第二缓冲层013露出光刻胶层00的部分进行感应耦合等离子体(inductively coupled plasma，ICP)刻蚀。通过四氟甲烷气体对第二缓冲层013进行刻蚀，可以避免对光刻胶层00和柔性衬底111的损伤。
可选地，所述对所述柔性衬底露出扩大后的所述孔区图案的部分进行半刻蚀的步骤之前或之后，还可以包括以下步骤：通过灰化工艺，将所述光刻胶层沿远离扩大后的所述孔区图案的方向进行刻蚀，以露出部分所述第二缓冲层。
其中，可以通过灰化工艺，将光刻胶层00沿远离孔区图案的方向进行刻蚀，以露出部分第二缓冲层013，也即是可以对光刻胶层00进行内缩，如图10所示。内缩光刻胶层00是为了后续再次对第二缓冲层013进行刻蚀，在本 步骤之前内缩光刻胶层00，可以避免柔性衬底111的内缩风险。
可选地，所述对所述柔性衬底露出扩大后的所述孔区图案的部分进行半刻蚀的步骤，具体可以包括：通过氧气气体对所述柔性衬底露出扩大后的所述孔区图案的部分进行半刻蚀。
在实际应用中，可以采用Plasma RIE工艺，通过氧气气体，对柔性衬底111露出扩大后的孔区图案的部分沿垂直于面板的方向进行半刻蚀，如图10所示。通过氧气气体对柔性衬底111进行刻蚀，可以避免对第二缓冲层013的损伤。
然后，可以再次重复执行预设工艺，扩大第二缓冲层013上的孔区图案，如图11所示，并对柔性衬底111露出扩大后的孔区图案的部分进行半刻蚀，如图12所示。
在本公开实施例中，每经过一次预设工艺，柔性衬底111的坡度会变得越缓。在具体应用时，可以执行至少一次预设工艺，直至在柔性衬底111形成孔区，以及在用于设置显示器件的岛区的边缘和/或在用于设置走线的桥区的边缘形成衬底斜坡A，如图13所示。其中，衬底斜坡A的斜面坡度角与预设工艺的执行次数呈正相关，也即是预设工艺的执行次数越多，衬底斜坡A的斜面坡度角越大。衬底斜坡A的斜面坡度角与对柔性衬底111露出扩大后的孔区图案的部分进行半刻蚀的刻蚀时长呈正相关，也即是对柔性衬底111露出扩大后的孔区图案的部分进行半刻蚀的刻蚀时长越长，衬底斜坡A的斜面坡度角越大。
在实际应用中，可以执行至少一次预设工艺，直至在形成孔区的同时，达到想要的衬底斜坡的斜面坡度角。需要说明的是，由于孔区需要贯通面板，因此，可以在最后一次执行预设工艺时，在柔性衬底111对应孔区的部分剩余很薄的情况下，对柔性衬底111露出扩大后的孔区图案的部分进行全刻蚀，从而形成孔区。当然，也可以是在最后一次执行预设工艺执行完毕之后，再对柔性衬底111对应孔区的部分进行全刻蚀，从而形成孔区，本公开实施例对此不作具体限定。
至少一次预设工艺执行完毕，并在柔性衬底111形成孔区03，以及在用于设置显示器件的岛区的边缘和/或在用于设置走线的桥区的边缘形成衬底斜坡A之后，可以剥离光刻胶层00，如图14所示。
步骤506：形成覆盖所述衬底斜坡的第一缓冲层，得到斜坡层。
在本步骤中，由于第二缓冲层013在预设工艺等阶段被多次刻蚀，因此，柔性衬底111的衬底斜坡上只有极少的第二缓冲层013覆盖。因此，可以在衬底斜坡上形成覆盖衬底斜坡的第一缓冲层112，如图15所示，从而得到斜坡层，其中，第一缓冲层112可以在衬底斜坡与后续设置的隔离柱12之间起到缓冲作用。
步骤507：沿所述斜坡层的斜面形成多个隔离柱。
在本步骤中，可以在斜坡层的斜面上形成多个隔离柱12，如图16所示。具体地，首先可以在斜坡层的斜面上形成隔离柱膜材014，然后再通过构图工艺，形成位于隔离区域的多个隔离柱12。
在实际应用中，斜坡层斜面上的隔离柱膜材014，可以是显示器件部分的PS(垫隔物)层、PLN(平坦化)层，以及薄膜晶体管的SD(源漏极)层中的至少一者延伸至斜坡层斜面上的部分，也即是隔离柱12具体可以包括PS层、PLN层和SD层中的至少一种。
例如，将显示器件部分的PLN层延伸至斜坡层斜面上的部分作为隔离柱膜材014，则隔离柱12即为PLN隔离柱12。再例如，将显示器件部分的SD层和PLN层延伸至斜坡层斜面上的部分作为隔离柱膜材014，则隔离柱12即为SD+PLN隔离柱12，其中，SD+PLN隔离柱12中的SD层可以靠近斜坡层设置，SD+PLN隔离柱12中的PLN层可以位于SD层远离斜坡层的一侧。
在本公开实施例中，由于斜坡层的斜面坡度角在极大程度上决定于衬底斜坡的斜面坡度角，因此，可选地，所述斜坡层的斜面坡度角与所述预设工艺的执行次数呈正相关。可选地，所述斜坡层的斜面坡度角与所述对所述柔性衬底露出扩大后的所述孔区图案的部分进行半刻蚀的刻蚀时长呈正相关。因此，在实际应用中，可以通过在合理范围内增加预设工艺的执行次数，和/或对柔性衬底露出扩大后的孔区图案的部分进行半刻蚀的刻蚀时长，从而获得较缓的斜坡层斜面，较缓的斜面上便可以设置更多的隔离柱，从而进一步增强面板的裂纹隔离效果，并且，面板边缘的封装距离进一步延长，因此，还可以进一步增强面板的封装效果。
此外，该制备方法还可以包括形成封装层等常规步骤，本公开实施例对此不作具体限定。
在本公开实施例中，可拉伸显示面板的制备方法可以包括：提供柔性衬底；在所述柔性衬底上形成第二缓冲层；在所述第二缓冲层上形成孔区图案；对所述柔性衬底露出所述孔区图案的部分进行半刻蚀；执行至少一次预设工艺，直至在所述柔性衬底形成孔区，以及在用于设置显示器件的岛区的边缘和/或在用于设置走线的桥区的边缘形成衬底斜坡；形成覆盖所述衬底斜坡的第一缓冲层，得到斜坡层；沿所述斜坡层的斜面形成多个隔离柱。其中，所述预设工艺包括：扩大所述第二缓冲层上的孔区图案；对所述柔性衬底露出扩大后的所述孔区图案的部分进行半刻蚀。在本公开实施例中，通过上述方法，可以在可拉伸显示面板的岛区和/或桥区边缘的隔离区域形成斜坡层，以及沿斜坡层的斜面形成多个隔离柱。斜面可以增大面板边缘的隔离柱放置空间，从而可以在隔离柱放置空间放置更多的隔离柱，增强了面板的裂纹隔离效果。另外，由于面板的隔离区域宽度增大，也即是延长了面板边缘的封装距离，因此，增强了面板的封装效果。
本公开实施例还公开了一种显示装置，包括上述可拉伸显示面板。
在本公开实施例中，可拉伸显示面板包括设置有显示器件的岛区、设置有走线的桥区，以及孔区，岛区和/或桥区的边缘设置有隔离区域，隔离区域包括斜坡层以及沿斜坡层的斜面设置的多个隔离柱。在本公开实施例中，可以将面板边缘的隔离区域设置为具有斜面的斜坡层，并在斜坡层的斜面上设置多个隔离柱，斜面可以增大面板边缘的隔离柱放置空间，从而可以在隔离柱放置空间放置更多的隔离柱，增强了面板的裂纹隔离效果。另外，由于面板的隔离区域宽度增大，也即是延长了面板边缘的封装距离，因此，增强了面板的封装效果。
对于前述的各方法实施例，为了简单描述，故将其都表述为一系列的动作组合，但是本领域技术人员应该知悉，本公开并不受所描述的动作顺序的限制，因为依据本公开，某些步骤可以采用其他顺序或者同时进行。其次，本领域技术人员也应该知悉，说明书中所描述的实施例均属于优选实施例，所涉及的动作和模块并不一定是本公开所必须的。
本说明书中的各个实施例均采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似的部分互相参见即可。
最后，还需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、商品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、商品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、商品或者设备中还存在另外的相同要素。
以上对本公开所提供的一种可拉伸显示面板及其制备方法、显示装置，进行了详细介绍，本文中应用了具体个例对本公开的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本公开的方法及其核心思想；同时，对于本领域的一般技术人员，依据本公开的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本公开的限制。

Claims (19)

  1. 一种可拉伸显示面板，其中，包括设置有显示器件的岛区、设置有走线的桥区，以及孔区，所述岛区和/或所述桥区的边缘设置有隔离区域，所述隔离区域包括斜坡层以及沿所述斜坡层的斜面设置的多个隔离柱。
  2. 根据权利要求1所述的显示面板，其中，所述斜坡层包括柔性衬底以及设置在所述柔性衬底上的第一缓冲层，所述多个隔离柱设置在所述第一缓冲层上。
  3. 根据权利要求2所述的显示面板，其中，所述柔性衬底的斜面坡度角大于0度，且小于或等于30度。
  4. 根据权利要求2所述的显示面板，其中，所述第一缓冲层的斜面坡度角小于所述柔性衬底的斜面坡度角。
  5. 根据权利要求2所述的显示面板，还包括位于所述柔性衬底和所述第一缓冲层之间的第二缓冲层，所述第二缓冲层与所述多个隔离柱没有交叠。
  6. 根据权利要求2所述的显示面板，其中，还包括位于所述柔性衬底和所述第一缓冲层之间的第二缓冲层，所述第二缓冲层与所述第一缓冲层的斜坡面没有交叠。
  7. 根据权利要求5或6所述的显示面板，其中，还包括图案化的光刻胶层，所述图案化的光刻胶层位于所述第二缓冲层上。
  8. 根据权利要求1所述的显示面板，其中，所述隔离柱包括垫隔物层、平坦化层和源漏极层中的至少一种。
  9. 根据权利要求1所述的显示面板，其中，所述隔离区域还包括覆盖所述多个隔离柱的发光材料层，以及覆盖所述发光材料层的封装层。
  10. 一种可拉伸显示面板的制备方法，其中，所述方法包括：
    提供柔性衬底；
    在所述柔性衬底上形成第二缓冲层；
    在所述第二缓冲层上形成孔区图案；
    对所述柔性衬底露出所述孔区图案的部分进行半刻蚀；
    执行至少一次预设工艺，直至在所述柔性衬底形成孔区，以及在用于设置显示器件的岛区的边缘和/或在用于设置走线的桥区的边缘形成衬底斜坡；
    形成覆盖所述衬底斜坡的第一缓冲层，得到斜坡层；
    沿所述斜坡层的斜面形成多个隔离柱；
    其中，所述预设工艺包括：扩大所述第二缓冲层上的孔区图案；对所述柔性衬底露出扩大后的所述孔区图案的部分进行半刻蚀。
  11. 根据权利要求10所述的方法，其中，所述在所述第二缓冲层上形成孔区图案，包括：
    在所述第二缓冲层上形成图案化的光刻胶层；以及
    对所述第二缓冲层露出所述图案化的光刻胶层的部分进行刻蚀，形成孔区图案。
  12. 根据权利要求11所述的方法，其中，所述对所述柔性衬底露出所述孔区图案的部分进行半刻蚀之前或之后，还包括：
    通过灰化工艺，将所述光刻胶层沿远离所述孔区图案的方向进行刻蚀，以露出部分所述第二缓冲层。
  13. 根据权利要求11所述的方法，其中，所述扩大所述第二缓冲层上的孔区图案，包括：
    对所述第二缓冲层露出所述光刻胶层的部分进行刻蚀。
  14. 根据权利要求13所述的方法，其中，所述对所述第二缓冲层露出所述光刻胶层的部分进行刻蚀，包括：
    通过四氟甲烷气体对所述第二缓冲层露出所述光刻胶层的部分进行刻蚀。
  15. 根据权利要求10所述的方法，其中，所述对所述柔性衬底露出所述孔区图案的部分进行半刻蚀，包括：
    通过氧气气体对所述柔性衬底露出所述孔区图案的部分进行半刻蚀。
  16. 根据权利要求10所述的方法，其中，所述斜坡层的斜面坡度角与所述预设工艺的执行次数呈正相关。
  17. 根据权利要求10所述的方法，其中，所述斜坡层的斜面坡度角与所述对所述柔性衬底露出扩大后的所述孔区图案的部分进行半刻蚀的刻蚀时长呈正相关。
  18. 根据权利要求10所述的方法，其中，所述沿所述斜坡层的斜面形成多个隔离柱，包括：在所述斜坡层的斜面上形成隔离柱膜材，通过构图工艺，形成位于隔离区域的所述多个隔离柱。
  19. 一种显示装置，其中，包括权利要求1-9任一项所述的可拉伸显示面板。
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