WO2017202115A1 - 薄膜晶体管及其制作方法、衬底基板及显示装置 - Google Patents

薄膜晶体管及其制作方法、衬底基板及显示装置 Download PDF

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WO2017202115A1
WO2017202115A1 PCT/CN2017/076951 CN2017076951W WO2017202115A1 WO 2017202115 A1 WO2017202115 A1 WO 2017202115A1 CN 2017076951 W CN2017076951 W CN 2017076951W WO 2017202115 A1 WO2017202115 A1 WO 2017202115A1
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metal oxide
layer
gate
oxide pattern
base substrate
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PCT/CN2017/076951
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English (en)
French (fr)
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刘凤娟
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京东方科技集团股份有限公司
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Priority to US15/559,098 priority Critical patent/US20190088784A1/en
Publication of WO2017202115A1 publication Critical patent/WO2017202115A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/467—Chemical or electrical treatment, e.g. electrolytic etching using masks
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Definitions

  • the present disclosure relates to the field of manufacturing of displays, and more particularly to a thin film transistor and a method of fabricating the same, a substrate and a display device.
  • a semiconductor pattern 2 is generally deposited on the substrate 1 and then a gate is formed over the semiconductor pattern.
  • the electrode G and the gate G are used as a mask, and a region of the semiconductor pattern 2 that is not blocked by the gate G is subjected to a conductor treatment by a conductor process such as plasma processing to form a source S and a drain D.
  • a conductor process such as plasma processing to form a source S and a drain D.
  • the effect of the conductor obtained by the plasma treatment method is unstable, and there is a risk that the source-drain resistance increases in the later stage, thereby affecting the reliability of the device.
  • the thin film transistor fabricated by the method has a source S, a drain D and a semiconductor layer therebetween formed by a layer structure, which causes a large off-state current. The stability of the operation of the thin film transistor is reduced, which ultimately affects the display effect of the picture.
  • the present disclosure provides a method of fabricating a thin film transistor, including:
  • the etching solution chemically reacts with a surface of the first metal oxide pattern that does not fall into the mask region to form a conductor as a source and a drain.
  • the method for manufacturing the disclosure further includes:
  • the gate insulating layer falls into a region of the gate and separates the gate from the second metal oxide; the gate serves as a mask for etching the second metal oxide pattern .
  • sequentially forming a gate insulating layer and a gate on the substrate formed with the semiconductor layer including:
  • the gate insulating layer is etched by etching the insulating material layer that does not fall into the gate region by using the gate as a mask.
  • the etching solution is a mixed solution of acetic acid, phosphoric acid and nitric acid.
  • the etching solution is an acidic etching solution.
  • forming the semiconductor layer on the base substrate comprises: sequentially depositing a first metal oxide layer and a second metal oxide layer on the base substrate; and performing a patterning process on the first metal oxide layer and the second The metal oxide layer is patterned to obtain the first metal oxide pattern formed by the first metal oxide layer, and the second metal oxide formed by the second metal oxide layer Compound graphics.
  • forming the semiconductor layer on the base substrate comprises: forming the first metal oxide pattern on the base substrate by one patterning process; depositing the second metal oxide covering the first metal oxide pattern Object graphics.
  • the present disclosure also provides a thin film transistor comprising:
  • the semiconductor layer includes: a first metal oxide pattern and a second metal oxide pattern; the second metal oxide pattern falls within a region of the first metal oxide pattern, and the first metal oxide A surface of the region not covered by the second metal oxide pattern is formed with a conductor as the source and the drain.
  • the thin film transistor of the present disclosure further includes:
  • the gate insulating layer falls within a region of the gate and separates the gate from the second metal oxide, the second metal oxide pattern falling within a region of the gate.
  • the present disclosure also provides an array substrate including the above thin film transistor.
  • the array substrate further includes:
  • a buffer layer is formed between the semiconductor layer and the base substrate.
  • the array substrate further includes:
  • planar layer covering the semiconductor layer, and data lines and pixel electrodes formed on the planar layer;
  • the flat layer has a first via and a second via, the first via is disposed opposite to the source, the second via is disposed opposite the drain, and the data line passes through the A first via is connected to the source, and the pixel electrode is connected to the drain through the second via.
  • the present disclosure also provides a display device including the above array substrate.
  • two different metal oxide patterns are sequentially deposited as a semiconductor layer.
  • the upper metal oxide pattern is etched and chemically reacted with the exposed underlying metal oxide pattern to form a conductor as a source and a drain.
  • the channel layer is not located in the same layer, and the structure can effectively reduce the off-state current of the thin film transistor.
  • FIG. 1 is a schematic view showing formation of a source and a drain in a semiconductor layer by a plasma treatment process in the related art
  • 2A-2C are schematic flow charts of a method of fabricating a thin film transistor of the present disclosure
  • FIG. 3 is a schematic diagram of forming a top gate thin film transistor by the fabrication method of the present disclosure
  • 4A-4E are detailed flowcharts of fabricating a top gate thin film transistor according to the method of fabricating the present disclosure
  • FIG. 5 is a schematic structural view of an array substrate through the present disclosure.
  • the present disclosure provides a solution to the technical problem of a large off-state current and a poor device reliability of a top gate type oxide thin film transistor in the related art.
  • an embodiment of the present disclosure provides a method of fabricating a thin film transistor, including:
  • Step 1 referring to FIG. 2A, a semiconductor layer 2 formed on a base substrate 1; the semiconductor layer 2 sequentially includes: a first metal oxide pattern 21 and a second metal oxide pattern 22, and the second metal oxide pattern 22 is covered a first metal oxide pattern 21;
  • Step 2 referring to FIG. 2B, etching the second metal oxide pattern 22 that does not fall into the mask region of the mask by using a mask mask; wherein, referring to FIG. 2C, acidic
  • the etching solution also chemically reacts with the surface of the first metal oxide pattern 21 that does not fall into the mask mask region to form a conductor as the source S and the drain D.
  • the acidic etching solution of the present embodiment may be a mixed solution of acetic acid, phosphoric acid and nitric acid, which can effectively dissolve the second metal oxide (In 2 O 3 ) e (NO) f (ZnO) g and chemically react with the first metal oxide (In 2 O 3 ) a (SnO 2 ) b (MO) c (ZnO) d to form a more conductive tin-rich layer on the surface .
  • the second metal oxide pattern 22 which is not etched away in this embodiment is higher as a part of the semiconductor pattern than the source S and the drain D, and the structure design can make the source S The off-state current of the drain D and the drain D are effectively reduced, thereby effectively increasing the switching rate of the thin film transistor.
  • the manufacturing method of the embodiment further includes: before the step 2: On the base substrate having the semiconductor layers 21, 22, a gate insulating layer 3 and a gate electrode 4 are sequentially formed; wherein the gate insulating layer 3 of the present embodiment falls into the region of the gate electrode 4, and the gate electrode 4 and the semiconductor are The layers 21, 22 are separated.
  • the pattern of the multiplex gate 4 of the present embodiment is used as a mask to etch the second metal oxide pattern 22. Since the etching step does not refer to a new mask, it is effectively reduced in manufacturing cost and has high practical value.
  • the fabrication process of the thin film transistor includes:
  • Step 41 referring to FIG. 4A, sequentially depositing a first metal oxide layer and a second metal oxide layer on the base substrate, and patterning the first metal oxide layer and the second metal oxide layer by one patterning process Processing, obtaining a first metal oxide pattern 21 formed by the first metal oxide layer, and a second metal oxide pattern 22 formed by the second metal oxide layer (of course, as another possible solution of step 41, Forming a first metal oxide pattern 21 by a patterning process, and then directly depositing a second metal oxide pattern 22 capable of covering the first metal oxide pattern 21);
  • Step 42 referring to FIG. 4B, sequentially depositing an insulating material layer 3 and a conductive material layer 4;
  • Step 43 referring to FIG. 4C, the conductive material layer 4 is patterned by a patterning process to form a gate G;
  • Step 44 referring to FIG. 4D, using the gate G as a mask, etching the insulating material layer 3 that does not fall into the gate G region, to obtain the gate insulating layer 3 falling into the gate G region;
  • Step 45 referring to FIG. 4E, using the gate G as a mask, an acidic etching solution is used to etch away the second metal oxide pattern 22 that does not fall into the gate G region.
  • the etched second metal oxide pattern 22 exposes the first metal oxide pattern 21, and the acidic etching solution chemically reacts with the exposed first metal oxide pattern 21 to The surface generates a source S and a drain D;
  • the present embodiment skillfully utilizes an acidic etching solution to etch the second metallization pattern while simultaneously applying the first metallization pattern.
  • Part of the area is conductorized to form a source and a drain.
  • the method is simple in process and uses a gate as a mask, so the cost is low.
  • the photoresist used for etching the gate can be retained, and the gate is used as a mask.
  • the mask may refer to the gate and the overall structure of the remaining photoresist.
  • FIG. 4E Another embodiment of the present disclosure further provides a thin film transistor corresponding to the above manufacturing method, as shown in FIG. 4E, including:
  • the second metal oxide pattern 22 covers a partial region of the first metal oxide pattern 21, and a surface of the region where the first metal oxide 21 is not covered by the second metal oxide pattern 22 is formed as the source S and The conductor of the above drain D.
  • the thin film transistor of the present embodiment further includes a gate G and a gate insulating layer 3; the gate insulating layer 3 falls into a region of the gate G, and separates the gate G from the semiconductor layer, and the second metal is oxidized.
  • the object pattern 22 falls within the area of the gate G.
  • the thin film transistor of the present embodiment is produced by the above-described method for fabricating a thin film transistor, and therefore, the same technical effects can be achieved.
  • another embodiment of the present disclosure also provides an array substrate including the above thin film transistor.
  • the array substrate of the present embodiment adopts the thin film transistor structure formed on the base substrate 1 in FIG. 4, and further referring to FIG. 5, in this embodiment, a buffer layer is further added between the base substrate 1 and the thin film transistor.
  • the buffer layer buffer can isolate the damage caused by the thermal stress of the base substrate 1 on the thin film transistor.
  • the array substrate of this embodiment further includes:
  • the flat layer 5 has a first via hole and a second via hole, the first via hole is opposite to the source in the thin film transistor, the second via hole is opposite to the drain electrode in the thin film transistor, and the data line 52 passes through The first via is connected to the source S, and the pixel electrode 53 is connected to the drain D through the second via.
  • the present disclosure also provides a display panel including the above array substrate. Since the thin film transistor provided by the present disclosure is employed, a more stable display screen can be provided, and the user experience effect is improved.

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  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种薄膜晶体管及其制作方法、衬底基板及显示装置。制作方法包括：在衬底基板（1）上形成半导体层（2），半导体层包括：第一金属氧化物图形（21）和覆盖该第一金属氧化物图形的第二金属氧化物图形（22）；通过掩膜版，使用刻蚀液对未落入掩膜版区域的第二金属氧化物图形进行刻蚀；掩膜版落入第二金属氧化物图形的区域内，刻蚀液与未落入掩膜版区域的第一金属氧化物图形的表面发生化学反应，形成作为源极（S）和漏极（D）的导体。

Description

薄膜晶体管及其制作方法、衬底基板及显示装置
相关申请的交叉引用
本申请主张在2016年5月26日在中国提交的中国专利申请No.201610362366.2的优先权，其全部内容通过引用包含于此。
技术领域
本公开文本涉及显示器的制作领域，特别是指一种薄膜晶体管及其制作方法、衬底基板及显示装置。
背景技术
如图1所示，在相关技术中的显示器的顶栅型金属氧化物薄膜晶体管的制作方法中，一般是先在衬底基板1上沉积一层半导体图形2，之后在该半导体图形上方形成栅极G，并以栅极G为掩膜版，通过等离子体处理等导体化工艺，对未被栅极G遮挡的半导体图形2的区域进行导体化处理，以形成源极S和漏极D。该方法的好处是制作工艺以及薄膜晶体管的图层结构都相对简单。
但是，等离子体处理的方法获得的导体化效果不稳定，后期会存在源漏电阻增大的风险，从而影响器件的可靠性。并且从图1中可以看出，通过该方法制作的薄膜晶体管，源极S、漏极D以及其之间的半导体层是由一个图层结构形成的，该结构会使关态电流较大，薄膜晶体管工作的稳定性降低，最终影响画面的显示效果。
发明内容
本公开文本的目的是提供一种能够改善薄膜晶体管关态电流及稳定性的技术方案。
为实现上述目的，一方面，本公开文本提供一种薄膜晶体管的制作方法，用包括：
在衬底基板上形成半导体层，所述半导体层依次包括：第一金属氧化物 图形和第二金属氧化物图形，所述第二金属氧化物图形覆盖所述第一金属氧化物图形；
通过掩膜版，使用刻蚀液，对未落入该掩膜版区域的第二金属氧化物图形进行刻蚀；其中，所述掩膜版落入所述第二金属氧化物图形的区域内，所述刻蚀液与未落入掩膜版区域的第一金属氧化物图形的表面发生化学反应，形成作为源极和漏极的导体。
可选地，本公开文本的制作方法还包括：
在形成有所述半导体层的衬底基板上，依次形成栅绝缘层和栅极；
其中，所述栅绝缘层落入所述栅极的区域内，并将所述栅极与所述第二金属氧化物相隔；所述栅极作为刻蚀第二金属氧化物图形的掩膜版。
可选地，在形成有所述半导体层的衬底基板上，依次形成栅绝缘层和栅极，包括：
在形成有所述半导体层的衬底基板上，依次沉积绝缘材料层和导电材料层；
通过构图工艺，对所述导电材料层进行图案化处理，得到栅极；
以所述栅极为掩膜版，对未落入所述栅极区域内的绝缘材料层进行刻蚀，得到栅绝缘层。
可选地，所述第一金属氧化物的材料为含锡金属氧化物(In2O3)a(SnO2)b(MO)c(ZnO)d，其中，0≤a≤1、0＜b≤1、0≤c≤1、0≤d≤1，且a+b+c+d＝1，M为Ga、Al、Mg中的任一种元素；所述第二金属氧化物的材料为(In2O3)e(NO)f(ZnO)g，其中，0≤e≤1、0≤f≤1、0≤g≤1，且e+f+g＝1，N为Ga、Al、Mg中的任一种元素。
可选地，所述刻蚀液为醋酸系、磷酸系和硝酸系的混合溶液。
可选地，所述刻蚀液为酸性的刻蚀液。
可选地，在衬底基板上形成半导体层包括：在衬底基板上依次沉积第一金属氧化物层和第二金属氧化物层；通过一次构图工艺，对第一金属氧化物层和第二金属氧化物层进行图案化处理，得到由第一金属氧化物层所形成的所述第一金属氧化物图形，以及由第二金属氧化物层形成的所述第二金属氧 化物图形。
可选地，在衬底基板上形成半导体层包括：通过一次构图工艺在衬底基板上形成所述第一金属氧化物图形；沉积覆盖所述第一金属氧化物图形的所述第二金属氧化物图形。
另一方面，本公开文本还提供一种薄膜晶体管，包括：
半导体层、源极和漏极；
所述半导体层包括：第一金属氧化物图形和第二金属氧化物图形；所述第二金属氧化物图形落入所述第一金属氧化物图形的区域内，且所述第一金属氧化物未被所述第二金属氧化物图形覆盖的区域的表面形成有作为所述源极和所述漏极的导体。
可选地，本公开文本的薄膜晶体管还包括：
栅极以及栅绝缘层；
所述栅绝缘层落入所述栅极的区域内，并将所述栅极与所述第二金属氧化物相隔，所述第二金属氧化物图形落入所述栅极的区域内。
此外，本公开文本还提供一种包括有上述薄膜晶体管的阵列基板。
可选地，上述阵列基板还包括：
在形成所述半导体层与所述衬底基板之间的缓冲层。
可选地，上述阵列基板还包括：
覆盖所述半导体层的平坦层，以及形成在所述平坦层上的数据线和像素电极；
所述平坦层具有第一过孔和第二过孔，所述第一过孔与所述源极相对设置，所述第二过孔与所述漏极相对设置，所述数据线通过所述第一过孔与所述源极连接，所述像素电极通过所述第二过孔与所述漏极连接。
此外，本公开文本还提供一种包括上述阵列基板的显示装置。
本公开文本的上述技术方案的有益效果如下：
在本公开文本的方案中，依次沉积两种不同的金属氧化物图形作为半导体层。巧妙利用酸性刻蚀溶液，对上层金属氧化物图形进行刻蚀，并与暴露出来的下层金属氧化物图形发生化学反应，形成作为源极和漏极的导体。相 比于顶栅结构金属氧化物薄膜晶体管现有技术通过等离子体处理工艺形成源极和漏极的技术方案，本公开文本的化学方法生成的导体的电阻更稳定，且源漏极和薄膜晶体管的沟道层不位于同一层，该结构能够有效降低薄膜晶体管的关态电流。
附图说明
为了更清楚地说明本申请实施例的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请中记载的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。以下附图并未刻意按实际尺寸等比例缩放绘制，重点在于示出本申请的主旨。
图1为相关技术中的通过等离子体处理工艺在半导体层形成源极和漏极的示意图；
图2A-图2C为本公开文本的薄膜晶体管的制作方法的流程示意图；
图3为通过本公开文本的制作方法形成顶栅薄膜晶体管的示意图；
图4A-图4E为本公开文本的制作方法制作顶栅薄膜晶体管的详细流程图；
图5为通过本公开文本的阵列基板的结构示意图。
具体实施方式
下面将结合本公开文本一些实施例中的附图，对本公开文本一些实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开文本一部分实施例，而不是全部的实施例。基于本公开文本中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开文本保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本公开文本所属领域内具有一般技能的人士所理解的通常意义。本公开文本专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”或者“一”等类似词语也不表示数量限制，而是表示存在至少一个。“连接”或 者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也相应地改变。
本公开文本针对相关技术中的顶栅型氧化物薄膜晶体管的关态电流较大和器件可靠度差的技术问题，提供一种解决方案。
一方面，本公开文本的实施例提供一种薄膜晶体管的制作方法，包括：
步骤1，参考图2A，在衬底基板1上形成的半导体层2；该半导体层2依次包括：第一金属氧化物图形21和第二金属氧化物图形22，第二金属氧化物图形22覆盖第一金属氧化物图形21；
步骤2，参考图2B，通过掩膜版mask，使用酸性的刻蚀液，对未落入该掩膜版mask区域的第二金属氧化物图形22进行刻蚀；其中，参考图2C，酸性的刻蚀液还与未落入掩膜版mask区域的第一金属氧化物图形21的表面发生化学反应，生成作为源极S和漏极D的导体。
作为示例性介绍，本实施例的所述第一金属氧化物的材料为含锡金属氧化物(In2O3)a(SnO2)b(MO)c(ZnO)d，其中，0≤a≤1、0＜b≤1、0≤c≤1、0≤d≤1，且a+b+c+d＝1，M为Ga、Al、Mg中的任一种元素；所述第二金属氧化物的材料为(In2O3)e(NO)f(ZnO)g，其中，0≤e≤1、0≤f≤1、0≤g≤1，且e+f+g＝1，N为Ga、Al、Mg中的任一种元素。
对应上述半导体层的材料，本实施例的酸性刻蚀液可以是醋酸系、磷酸系和硝酸系的混合溶液，能够有效溶解掉上述第二金属氧化物(In2O3)e(NO)f(ZnO)g，并与第一金属氧化物(In2O3)a(SnO2)b(MO)c(ZnO)d发生化学反应，在其表面生成一层导电性更高的富锡层。
显然，通过图2C可以看出，本实施例的未被刻蚀掉的第二金属氧化物图形22作为半导体图形一部分要高于源极S、漏极D，采用该结构设计可以使源极S和漏极D的关态电流得到有效降低，从而有效提高薄膜晶体管的开关率。
进一步地，参考图3，本实施例的制作方法在步骤2之前还包括：在形 成有半导体层21、22的衬底基板上，依次形成栅绝缘层3和栅极4；其中，本实施例的栅绝缘层3落入栅极4的区域内，并将栅极4与半导体层21、22相隔。
在上述步骤2中，本实施例复用栅极4的图形作为掩膜版使用，对第二金属氧化物图形22进行刻蚀。由于该刻蚀步骤并没有引用新的掩膜版，因此在制作成本上得到了有效降低，具有很高的实用价值。
下面结合一个实际应用，对本实施例的薄膜晶体管的制作方法进行详细介绍。
在本实际应用中，薄膜晶体管的制作流程包括：
步骤41，参考图4A，在衬底基板上依次沉积第一金属氧化物层和第二金属氧化物层，并通过一次构图工艺，对第一金属氧化物层和第二金属氧化物层进行图案化处理，得到由第一金属氧化物层所形成的第一金属氧化物图形21，以及由第二金属氧化物层形成的第二金属氧化物图形22(当然作为步骤41的其他可行方案，可以通过一次构图工艺先形成第一金属氧化物图形21，之后直接沉积能够覆盖该第一金属氧化物图形21的第二金属氧化物图形22即可)；
步骤42，参考图4B，依次沉积绝缘材料层3和导电材料层4；
步骤43，参考图4C，通过一次构图工艺，对导电材料层4进行图案化处理，形成栅极G；
步骤44，参考图4D，以栅极G为掩膜版，对未落入所述栅极G区域内的绝缘材料层3进行刻蚀，得到落入栅极G区域内的栅绝缘层3；
步骤45，参考图4E，以栅极G为掩膜版，使用酸性的刻蚀液，刻蚀掉未落入栅极G区域内的第二金属氧化物图形22。在刻蚀过程中，刻蚀掉的第二金属氧化物图形22会暴露出来第一金属氧化物图形21，酸性刻蚀液与该暴露出来的第一金属氧化物图形21发生化学反应，使其表面生成源极S和漏极D；
显然，通过上述步骤41-步骤45的描述可以知道，本实施例巧妙地利用酸性刻蚀液，对第二金属化物图形进行刻蚀，并同时对第一金属化物图形的 部分区域进行导体化处理，形成源极和漏极。该方法工艺简单，且使用栅极作为掩膜版，因此成本低廉。
此外，需要说明的是，作为上述实际应用的另一可行方案，本实施例在对栅极进行图案化处理后，可以保留刻蚀栅极所使用的光刻胶，在后续以栅极作为掩膜版刻蚀栅绝缘层和第二金属氧化物图形时，该掩膜版可以是指栅极以及保留的光刻胶的整体结构。
此外，本公开文本的另一实施例还提供一种对应上述制作方法的薄膜晶体管，如图4E所示，包括：
由第一金属氧化物图形21和第二金属氧化物图形22形成的半导体层、源极S和漏极D；
其中，第二金属氧化物图形22覆盖第一金属氧化物图形21的部分区域，且第一金属氧化物21未被第二金属氧化物图形22覆盖的区域的表面形成有作为上述源极S和上述漏极D的导体。
具体地，本实施例的薄膜晶体管还包括有栅极G以及栅绝缘层3；该栅绝缘层3落入栅极G的区域内，并将栅极G与半导体层相隔，且第二金属氧化物图形22落入栅极G的区域内。
本实施例的薄膜晶体管是通过上述薄膜晶体管的制作方法所制作得到的，因此均能够实现相同的技术效果。
此外，本公开文本的另一实施例还提供一种包括有上述薄膜晶体管的阵列基板。在实际应用中，假设本实施例的阵列基板采用图4中在衬底基板1上形成的薄膜晶体管结构，进一步参考图5，本实施例在衬底基板1与薄膜晶体管之间又加入缓冲层buffer，该缓冲层buffer能够隔绝衬底基板1的热应力对薄膜晶体管造成的破坏。
进一步地，本实施例的阵列基板还包括有：
覆盖半导体层的平坦层51，以及形成在平坦层51上的数据线52和像素电极53；
其中，平坦层5具有第一过孔和第二过孔，该第一过孔与薄膜晶体管中的源极相对设置，第二过孔与薄膜晶体管中的漏极相对设置，数据线52通过 第一过孔与源极S连接，像素电极53通过第二过孔与漏极D连接。
此外，本公开文本还提供包括有上述阵列基板的显示面板，由于采用了本公开文本所提供的薄膜晶体管，因此能够提供更加稳定的显示画面，提升了用户的体验效果。
以上所述是本公开文本的可选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开文本所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本公开文本的保护范围。

Claims (14)

  1. 一种薄膜晶体管的制作方法，包括：
    在衬底基板上形成半导体层，所述半导体层依次包括：第一金属氧化物图形和第二金属氧化物图形，所述第二金属氧化物图形覆盖所述第一金属氧化物图形；
    通过掩膜版，使用刻蚀液对未落入该掩膜版区域的第二金属氧化物图形进行刻蚀，其中，所述掩膜版落入所述第二金属氧化物图形的区域内，所述刻蚀液与未落入掩膜版区域的第一金属氧化物图形的表面发生化学反应，形成作为源极和漏极的导体。
  2. 根据权利要求1所述的制作方法，还包括：
    在形成有所述半导体层的衬底基板上，依次形成栅绝缘层和栅极，
    其中，所述栅绝缘层落入所述栅极的区域内，并将所述栅极与所述第二金属氧化物相隔；所述栅极作为刻蚀第二金属氧化物图形的掩膜版。
  3. 根据权利要求2所述的制作方法，其中，
    在形成有所述半导体层的衬底基板上，依次形成栅绝缘层和栅极，包括：
    在形成有所述半导体层的衬底基板上，依次沉积绝缘材料层和导电材料层；
    通过构图工艺，对所述导电材料层进行图案化处理，得到栅极；
    以所述栅极为掩膜版，对未落入所述栅极区域内的绝缘材料层进行刻蚀，得到栅绝缘层。
  4. 根据权利要求1所述的制作方法，其中，
    所述第一金属氧化物的材料为含锡金属氧化物(In2O3)a(SnO2)b(MO)c(ZnO)d，其中，0≤a≤1、0＜b≤1、0≤c≤1、0≤d≤1，且a+b+c+d＝1，M为Ga、Al、Mg中的任一种元素；
    所述第二金属氧化物的材料为(In2O3)e(NO)f(ZnO)g，其中，0≤e≤1、0≤f≤1、0≤g≤1，且e+f+g＝1，N为Ga、Al、Mg中的任一种元素。
  5. 根据权利要求4所述的制作方法，其中，
    所述刻蚀液为醋酸系、磷酸系和硝酸系的混合溶液。
  6. 根据权利要求1所述的制作方法，其中所述刻蚀液为酸性的刻蚀液。
  7. 根据权利要求1所述的制作方法，其中在衬底基板上形成半导体层包括：
    在衬底基板上依次沉积第一金属氧化物层和第二金属氧化物层；
    通过一次构图工艺，对第一金属氧化物层和第二金属氧化物层进行图案化处理，得到由第一金属氧化物层所形成的所述第一金属氧化物图形，以及由第二金属氧化物层形成的所述第二金属氧化物图形。
  8. 根据权利要求1所述的制作方法，其中在衬底基板上形成半导体层包括：
    通过一次构图工艺在衬底基板上形成所述第一金属氧化物图形；
    沉积覆盖所述第一金属氧化物图形的所述第二金属氧化物图形。
  9. 一种薄膜晶体管，包括：
    半导体层、源极和漏极，
    其中，所述半导体层包括：第一金属氧化物图形和第二金属氧化物图形；所述第二金属氧化物图形落入所述第一金属氧化物图形的区域内，且所述第一金属氧化物未被所述第二金属氧化物图形覆盖的区域的表面形成有作为所述源极和所述漏极的导体。
  10. 根据权利要求9所述的薄膜晶体管，还包括：
    栅极以及栅绝缘层，
    其中，所述栅绝缘层落入所述栅极的区域内，并将所述栅极与所述第二金属氧化物相隔，所述第二金属氧化物图形落入所述栅极的区域内。
  11. 一种阵列基板，包括：
    衬底基板，以及在所述衬底基板上形成的如权利要求9或10所述的薄膜晶体管。
  12. 根据权利要求11所述的阵列基板，还包括：
    设置在半导体层与衬底基板之间的缓冲层。
  13. 根据权利要求11所述的阵列基板，还包括：
    覆盖所述半导体层的平坦层，以及形成在所述平坦层上的数据线和像素电极，
    其中，所述平坦层具有第一过孔和第二过孔，所述第一过孔与所述源极相对设置，所述第二过孔与所述漏极相对设置，所述数据线通过所述第一过孔与所述源极连接，所述像素电极通过所述第二过孔与所述漏极连接。
  14. 一种显示装置，包括如权利要求11-13中任一项所述的阵列基板。
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