WO2021237982A1 - 一种涂布方法和涂布系统 - Google Patents
一种涂布方法和涂布系统 Download PDFInfo
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- WO2021237982A1 WO2021237982A1 PCT/CN2020/115247 CN2020115247W WO2021237982A1 WO 2021237982 A1 WO2021237982 A1 WO 2021237982A1 CN 2020115247 W CN2020115247 W CN 2020115247W WO 2021237982 A1 WO2021237982 A1 WO 2021237982A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
Definitions
- This application relates to the field of semiconductor manufacturing, in particular to a coating method and coating system.
- the photoresist on the substrate In the semiconductor manufacturing process, it is often necessary to coat the photoresist on the substrate.
- the photoresist located in the central area of the substrate surface diffuses to the peripheral area under the action of centrifugal force, and finally A photoresist layer is formed on the surface of the substrate.
- the viscosity of the photoresist is usually large, resulting in uneven thickness of the photoresist after coating on the substrate, thereby affecting the quality of the manufactured semiconductor products.
- the purpose of the present application is to provide a coating method and coating system, which aims to solve the technical problem of uneven thickness of the photoresist after coating in the existing coating method, which affects the quality of the product.
- this application provides a coating method, including:
- Rotating the substrate causes the first liquid to spread on the surface of the substrate and causes the second liquid to spread on the surface of the first liquid.
- the second liquid can always be in the first liquid.
- the first liquid will spread to the edge of the substrate under the action of centrifugal force, and the second liquid will spread on the surface of the first liquid under the action of centrifugal force.
- the thickness from the center to the edge area will be more uniform.
- the method further includes:
- Rotating the substrate causes the first liquid to spread to a first area on the surface of the substrate.
- the surface of the first liquid in order to facilitate the drop of the second liquid on the first liquid, before the second liquid is dropped, the surface of the first liquid can be enlarged to the first area by rotating the substrate, so that the surface area of the first liquid is larger. Larger, it will be more convenient to drip the second liquid.
- the coating method further includes:
- the second liquid is removed from the surface of the first liquid.
- the second liquid removing the surface of the first liquid includes:
- the second liquid in the process of removing the second liquid on the surface of the first liquid, the second liquid is removed by baking evaporation. Since the second liquid is located on the surface of the first liquid, during the baking process, the second liquid is removed. The first liquid will evaporate after the second liquid has evaporated, and the removal of the second liquid can be precisely controlled by controlling the evaporation time.
- the boiling point of the first liquid is greater than the boiling point of the second liquid.
- the second liquid can be removed by controlling the temperature to be greater than the boiling point of the second liquid and less than the boiling point of the first liquid. Control the evaporation time, and the operation is more convenient.
- the first liquid includes photoresist.
- the thickness of the center area and the edge area is likely to be different when spreading on the substrate, so the thickness of the photoresist diffusion needs to be adjusted to improve the quality of the product .
- the second liquid includes perfluorooctane, tetrahydrofuran and methyl ethyl ketone.
- perfluorooctane, tetrahydrofuran and methyl ethyl ketone are common materials in semiconductor manufacturing, they are easy to obtain, and the boiling points of perfluorooctane, tetrahydrofuran and methyl ethyl ketone are relatively small. It is easier to remove by evaporation.
- this application also provides a coating system, including:
- a first liquid injection device for dripping a first liquid onto the substrate
- the second liquid injection device is used to drop a second liquid onto the substrate; wherein the second liquid and the first liquid are incompatible with each other, and the density of the first liquid is greater than that of the first liquid.
- the substrate rotating device is used to drive the substrate to rotate so that the first liquid is diffused on the surface of the substrate and the second liquid is diffused on the surface of the first liquid.
- the first liquid is dropped on the substrate by the first liquid injection device
- the second liquid is dropped on the substrate by the second liquid injection device
- the substrate is rotated by the substrate rotating device so that the first liquid is on the substrate.
- the surface diffusion of the second liquid and the diffusion of the second liquid on the surface of the first liquid, the squeezing of the surface of the first liquid by the gravity of the second liquid can make the thickness of the first liquid more uniform.
- the coating system further includes:
- the substrate baking device is used for baking the first liquid and the second liquid.
- the first liquid and the second liquid are diffused on the substrate and then put into the substrate baking device for baking, so that the second liquid can be evaporated and removed from the surface of the first liquid, and the second liquid is removed.
- the process is convenient.
- the first liquid includes photoresist
- the second liquid includes perfluorooctane, tetrahydrofuran, and methyl ethyl ketone.
- the coating system is used for the thickness control of the photoresist coating.
- the second liquid uses perfluorooctane, tetrahydrofuran and methyl ethyl ketone, which has good adaptability to the photoresist and is easy to remove , Can play a very good effect of making the photoresist coating more uniform.
- FIG. 1 is a flowchart of a coating method according to an embodiment of the application
- FIG. 2 is a schematic diagram of the substrate after dropping the first liquid according to an embodiment of the application
- FIG. 3 is a schematic diagram of the substrate after dropping the first liquid and the second liquid according to an embodiment of the application;
- FIG. 4 is a schematic diagram of the substrate after the first liquid and the second liquid are diffused according to an embodiment of the application;
- FIG. 5 is a schematic structural diagram of a coating system according to an embodiment of the application.
- the photoresist is first dropped onto the substrate, and then rotated to homogenize the photoresist. This process is prone to have a large difference in thickness between the center and the edge of the photoresist film.
- the specific performance is as follows: in the process of rotation, the photoresist extends from the center of the substrate to the edge of the substrate due to the centrifugal force of rotation, but the center part of the substrate has more photoresist attached, which will inevitably cause the substrate during the rotation and distribution process.
- the thickness of the central area is larger than the edge of the substrate, which makes the distribution of photoresist on the substrate uneven and affects the yield of subsequent photolithography and other processes.
- the present application provides a coating method, including:
- a second liquid that is immiscible with the first liquid is dropped on the first liquid, and the density of the first liquid is greater than the density of the second liquid, so that the second liquid can always be in the first liquid.
- the first liquid 20 is dropped on the substrate 10 only, the center and edge thickness of the first liquid 20 will be uneven. After diffusion, the first liquid 20 will also have uneven center and edge thickness on the substrate 10.
- the second liquid 30 that is incompatible with the first liquid 20 is dropped on the surface of the first liquid 20, and the second liquid 30 dropped on the surface of the first liquid 20 can be controlled by gravity.
- a partial depression is formed on the surface of the first liquid 20, which will reduce the thickness of the center of the first liquid 20.
- the first liquid 20 will diffuse to the edge of the substrate 10 under the action of centrifugal force, and the second liquid 30 will Under the action of centrifugal force, it spreads on the surface of the first liquid 20. As shown in FIG. 4, the surface of the first liquid 20 is squeezed by the second liquid 30. The thickness of the diffused first liquid 20 from the center to the edge area will Will be more uniform.
- the first liquid drops in the center of the surface of the substrate, so that when the substrate is rotated, the first liquid spreads from the center of the substrate to the surroundings, and the distribution on the substrate is more uniform.
- the second liquid drops in the center of the surface of the first liquid, so that the second liquid is more evenly distributed in the first liquid.
- the method of rotating the substrate includes first rotating the substrate clockwise at a first speed to a first preset time, and then rotating the substrate counterclockwise at a second speed to a second preset time, Among them, the first speed is greater than the second speed. In this way, the thickness of the first liquid from the center to the edge area can be more balanced through the action of the forward and reverse centrifugal force.
- the method further includes:
- the surface of the first liquid can be enlarged to the first area by rotating the substrate, so that the surface area of the first liquid is larger, and the second liquid is dropped. Time will be more convenient.
- the size of the first area is at least 1/3 of the total area of the substrate. That is to say, the size of the first area is 1/3-3/3 of the total area of the substrate, such as 1/3, 2/3, and 3/3, which is not limited in this application.
- the size of the first area may be set to 1/3 of the total area of the substrate.
- the size of the first area is 1-3 times of the initial area size of the second liquid, such as 1.5 times, 2 times, 2.5 times, and 3 times, which is not limited in this application.
- the size of the first area can be set to 1.2 times the initial area of the second liquid.
- the coating method further includes:
- the second liquid Since the function of the second liquid is to squeeze the surface of the first liquid by gravity after the first liquid rotates and diffuses to make the thickness of the first liquid uniform, the second liquid needs to be removed after the diffusion of the first liquid is completed.
- the second liquid removing the surface of the first liquid includes:
- the second liquid is removed by baking evaporation. Since the second liquid is located on the surface of the first liquid, during the baking process, the second liquid evaporates the first liquid. The liquid will evaporate, and the removal of the second liquid can be precisely controlled by controlling the evaporation time.
- the removing the second liquid from the surface of the first liquid further includes: removing the second liquid by adsorption; or removing the second liquid by laser ablation.
- the second liquid can be sucked away from the surface of the first liquid by the adsorption device or the second liquid can be ablated and peeled off by the laser device.
- the second liquid includes a volatile liquid. In this way, there is no need to process the second liquid, and the second liquid can automatically volatilize from the surface of the first liquid, so that the removal process of the second liquid is easier.
- the boiling point of the first liquid is greater than the boiling point of the second liquid.
- the second liquid can be removed by controlling the temperature to be greater than the boiling point of the second liquid and less than the boiling point of the first liquid. Control the evaporation time, and the operation is more convenient.
- the surface tension of the first liquid is less than the surface tension of the substrate, and the surface tension of the second liquid is less than the surface tension of the first liquid, so that the first liquid is more likely to be on the substrate. Diffusion and spreading makes it easier for the second liquid to spread and spread on the surface of the first liquid.
- the first liquid includes photoresist.
- the first liquid also includes a liquid with a relatively high viscosity such as resin.
- the second liquid includes perfluorooctane, tetrahydrofuran, and methyl ethyl ketone.
- perfluorooctane, tetrahydrofuran and methyl ethyl ketone are common materials in semiconductor manufacturing, they are easy to obtain, and the boiling points of perfluorooctane, tetrahydrofuran and methyl ethyl ketone are relatively small, so they are easier to evaporate Remove.
- the present application also provides a coating system, including:
- a first liquid injection device for dripping a first liquid onto the substrate
- the second liquid injection device is used to drop a second liquid onto the substrate; wherein the second liquid and the first liquid are incompatible with each other, and the density of the first liquid is greater than that of the first liquid.
- the substrate rotating device is used to drive the substrate to rotate so that the first liquid is diffused on the surface of the substrate and the second liquid is diffused on the surface of the first liquid.
- the first liquid is dropped on the substrate through the first liquid injection device
- the second liquid is dropped on the substrate through the second liquid injection device
- the substrate is rotated by the substrate rotating device so that the first liquid is on the substrate.
- Surface diffusion and diffusion of the second liquid on the surface of the first liquid, and squeezing the surface of the first liquid by the gravity of the second liquid can make the thickness of the first liquid more uniform.
- the coating system further includes:
- the substrate baking device is used for baking the first liquid and the second liquid.
- the first liquid and the second liquid are diffused on the substrate and then put into the substrate baking device for baking, so that the second liquid can be evaporated and removed from the surface of the first liquid to remove the second liquid
- the substrate baking device for baking so that the second liquid can be evaporated and removed from the surface of the first liquid to remove the second liquid
- the first liquid includes photoresist
- the second liquid includes perfluorooctane, tetrahydrofuran, and methyl ethyl ketone.
- the coating system of the present application is used to control the thickness of photoresist coating.
- the second liquid adopts perfluorooctane, tetrahydrofuran and methyl ethyl ketone, which has good adaptability to the photoresist, and is easy to remove and can be used. To achieve a very good effect of making the photoresist coating more uniform.
- the present application provides a coating method and coating system, wherein the coating method includes: providing a substrate, and dropping a first liquid on the substrate; Drop the second liquid; rotate the substrate to spread the first liquid on the surface of the substrate and spread the second liquid on the surface of the first liquid.
- the coating method of the present application is due to the first There is a second liquid that is immiscible with the first liquid, and the density of the first liquid is greater than the density of the second liquid, so that the second liquid can always be on top of the first liquid. Rotate the substrate. The liquid will spread to the edge of the substrate under the action of centrifugal force, and the second liquid will spread on the surface of the first liquid under the action of centrifugal force. The thickness of the liquid will be more uniform.
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Abstract
一种涂布方法及涂布系统,其中,涂布方法包括:提供一基板(10),在基板(10)之上滴第一液体(20);在第一液体(20)之上滴与第一液体(20)不互溶且密度大于第一液体(20)的第二液体(30);旋转基板(10)使第一液体(20)在基板(10)的表面扩散以及使第二液体(30)在第一液体(20)的表面扩散。涂布方法由于在第一液体(20)之上滴有与第一液体(20)不互溶且密度小于第一液体(20)的第二液体(30),旋转基板(10),第一液体(20)在离心力的作用下会向基板(10)的边缘扩散,第二液体(30)则会在离心力的作用下在第一液体(20)的表面扩散,第一液体(20)的表面由于受到第二液体(30)的挤压作用,扩散后第一液体(20)的中心至边缘区域的厚度将会更加的均匀。
Description
本申请涉及半导体制造领域,尤其涉及一种涂布方法及涂布系统。
在半导体制造过程中,经常需要在基板上涂覆光刻胶,在基板上涂覆光刻胶时,先是将基板固定设置在转盘的承载面上,然后采用喷嘴将一定量的光刻胶喷涂在基板的表面的中央区域,之后控制转盘旋转,带动基板绕基板的中心旋转,在基板旋转的过程中,位于基板表面的中央区域的光刻胶在离心力的作用下向周边区域扩散,最终在基板表面上形成光刻胶层。
然而在实现光刻胶扩散的过程中,由于光刻胶的粘度通常较大,导致光刻胶在基板上的涂布后的厚度不均一,从而影响到制作的半导体产品质量。
因此,现有技术还有待于发展和改进。
发明内容
鉴于上述现有技术的不足,本申请的目的在于提供一种涂布方法及涂布系统,旨在解决现有涂布方法光刻胶涂布后厚度不均一,影响产品质量的技术问题。
一方面,本申请提供了一种涂布方法,包括:
提供一基板,在所述基板之上滴第一液体;
在所述第一液体之上滴第二液体,其中,所述第一液体与所述第二液体之间互不相溶,且所述第一液体的密度大于所述第二液体的密度;
旋转所述基板使所述第一液体在所述基板的表面扩散以及使所述第二液体在所述第一液体的表面扩散。
在上述实现过程中,由于在第一液体之上滴有与第一液体互不相溶的第二液体,且第一液体的密度大于第二液体的密度,这样第二液体就能始终处于第一液体之上,旋转基板,第一液体在离心力的作用下会向基板的边缘扩散,第二液体则会在离心力的作用下在第一液体的表面扩散,第一液体的表面由于受到第二液体的挤压作用,中心至边缘区域的厚度将会更加的均一。
可选地,所述在所述基板之上滴第一液体之后且在所述第一液体之上滴第二液体之 前还包括:
旋转所述基板使所述第一液体在所述基板的表面扩散至第一面积。
在上述实现过程中,为了方便第二液体滴在第一液体之上,在滴第二液体之前,可以通过旋转基板使第一液体的表面扩大至第一面积,这样第一液体的表面面积更大,滴第二液体时将会更加方便。
可选地,所述涂布方法还包括:
去除所述第一液体的表面的所述第二液体。
在上述实现过程中,由于第二液体的作用就是在第一液体旋转扩散后通过重力对第一液体的表面进行挤压使第一液体的厚度均匀,所以在第一液体扩散完成之后就需要对第二液体进行去除。
可选地,所述去除所述第一液体的表面的所述第二液体包括:
对所述第一液体和所述第二液体进行烘烤,使所述第二液体从所述第一液体的表面挥发。
在上述实现过程中,在去除第一液体表面的第二液体的过程中,通过烘烤蒸发形式去除第二液体,由于第二液体位于第一液体的表面,所以在烘烤的过程中,第二液体蒸发完第一液体才会蒸发,可以通过控制蒸发时间精准的控制第二液体的去除。
可选地,所述第一液体的沸点大于所述第二液体的沸点。
在上述实现过程中,由于第一液体的沸点大于第二液体的沸点,这样可以通过控制温度大于第二液体的沸点且小于第一液体的沸点来实现第二液体的去除,过程中无需精准的控制蒸发时间,操作更加方便。
可选地,所述第一液体包括光刻胶。
在上述实现过程中,由于光刻胶的粘度较大,在基板上扩散时容易出现中心区域和边缘区域厚度不一的情况,所以需要对光刻胶扩散的厚度进行调整,从而提高产品的质量。
可选地,所述第二液体包括全氟辛烷、四氢呋喃和甲基乙基酮。
在上述实现过程中,由于全氟辛烷、四氢呋喃和甲基乙基酮均是半导体制造中常见的材料,容易获取,且全氟辛烷、四氢呋喃和甲基乙基酮的沸点均较小,比较容易通过蒸发的方式去除。
另一方面,基于同样的发明构思,本申请还提供了一种涂布系统,包括:
基板;
第一液体注入装置,用于向所述基板之上滴第一液体;
第二液体注入装置,用于向所述基板之上滴第二液体;其中,所述第二液体与所述第一液体之间互不相溶,且所述第一液体的密度大于所述第二液体的密度;
基板旋转装置,用于驱动所述基板旋转,以使所述第一液体在所述基板的表面扩散以及使所述第二液体在所述第一液体的表面扩散。
在上述实现过程中,通过第一液体注入装置向基板上滴第一液体,通过第二液体注入装置向所述基板之上滴第二液体,之后通过基板旋转装置旋转基板使第一液体在基板的表面扩散以及使第二液体在第一液体的表面扩散,通过第二液体的重力对第一液体的表面进行挤压可以使第一液体的厚度更加均匀。
可选地,所述的涂布系统还包括:
基板烘烤装置,用于对所述第一液体和所述第二液体进行烘烤。
在上述实现过程中,将第一液体和第二液体在基板上扩散后放入到基板烘烤装置进行烘烤,这样第二液体便能够从第一液体的表面蒸发去除,除去第二液体的过程方便。
可选地,所述第一液体包括光刻胶,所述第二液体包括全氟辛烷、四氢呋喃和甲基乙基酮。
在上述实现过程中,涂布系统用于光刻胶涂布的厚度控制,第二液体采用全氟辛烷、四氢呋喃和甲基乙基酮与光刻胶具有很好的适应性,且容易去除,能够起到很好的使光刻胶涂布更加均匀的效果。
图1为本申请一实施例的一种涂布方法的流程图;
图2为本申请一实施例的滴第一液体后的基板示意图;
图3为本申请一实施例的滴第一液体和第二液体后的基板示意图;
图4为本申请一实施例的第一液体和第二液体扩散后的基板示意图;
图5为本申请一实施例的一种涂布系统的结构示意图。
为了便于理解本申请,下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施方式。但是,本申请可以以许多不同的形式来实现,并不限于本文所描述的实施方式。相反地,提供这些实施方式的目的是使对本申请的公开内容理解 的更加透彻全面。
除非另有定义,本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施方式的目的,不是旨在于限制本申请。
现有光刻胶旋转涂布工艺中,首先光刻胶滴入基板上,然后以旋转匀胶,此工艺易存在中心与边缘光刻胶膜厚相差较大的情况。具体表现为:在旋转的过程中,光刻胶由于旋转离心力的作用下从基板中心向基板边缘延伸分布,但是基板中心部分由于附着的光刻胶比较多,在旋转分布过程中势必会造成基板中心区域的厚度比基板边缘大,使光刻胶在基板的分布不均匀,影响后续光刻等工艺的良率。
基于此,本申请希望提供一种能够解决上述技术问题的方案,其详细内容将在后续实施例中得以阐述。
参见图1,本申请提供了一种涂布方法,包括:
S100、提供一基板,在所述基板之上滴第一液体;
S200、在所述第一液体之上滴第二液体,其中,所述第一液体与所述第二液体之间互不相溶,且所述第一液体的密度大于所述第二液体的密度;
S300、旋转所述基板使所述第一液体在所述基板的表面扩散以及使所述第二液体在所述第一液体的表面扩散,通过所述第二液体对所述第一液体的表面进行挤压使所述第一液体的厚度均匀。
本申请的涂布方法由于在第一液体之上滴有与第一液体互不相溶的第二液体,且第一液体的密度大于第二液体的密度,这样第二液体就能始终处于第一液体之上,参见图2,只在基板10上滴第一液体20,第一液体20的中心和边缘厚度不均,扩散后第一液体20在基板10也会存在边缘中心和边缘厚度不均的缺陷,参见图3,通过在第一液体20的表面在滴有与第一液体20不相容的第二液体30,滴在第一液体20表面的第二液体30通过重力的作用能够在第一液体20的表面形成部分凹陷,将降低第一液体20中心的厚度,之后,旋转基板10,第一液体20在离心力的作用下会向基板10的边缘扩散,第二液体30则会在离心力的作用下在第一液体20的表面扩散,参见图4,第一液体20的表面由于受到第二液体30的挤压作用,扩散后的第一液体20的中心至边缘区域的厚度将会更加的均一。
在某些实施方式中,所述第一液体滴在所述基板的表面的中心,这样旋转基板,第一液体从基板的中心向四周扩散,在基板上的分布更加均匀。
在某些实施方式中,所述第二液体滴在所述第一液体的表面的中心,这样第二液体在第一液体分布也会更加均匀。
在某些实施方式中,旋转所述基板的方法包括先以第一速度顺时针旋转所述基板至第一预设时间,之后以第二速度逆时针旋转所述基板至第二预设时间,其中,第一速度大于第二速度。这样可以通过正反向的离心力的作用可以使第一液体的中心至边缘区域的厚度更加均衡。
在某些实施方式中,所述在所述基板之上滴第一液体之后且在所述第一液体之上滴第二液体之前还包括:
S110、旋转所述基板使所述第一液体在所述基板的表面扩散至第一面积。
为了方便第二液体滴在第一液体之上,在滴第二液体之前,可以通过旋转基板使第一液体的表面扩大至第一面积,这样第一液体的表面面积更大,滴第二液体时将会更加方便。
在某些实施方式中,所述第一面积的大小至少为所述基板的总面积的1/3。也就是说,所述第一面积的大小为基板总面积的1/3-3/3,比如1/3、2/3和3/3,本申请在此不做限定。为了第二次旋转基板时第一液体不会从基板的边缘溢出,所述第一面积的大小可以设置成基板总面积的1/3。
在某些实施方式中,所述第一面积的大小为所述第二液体的初始面积大小的1-3倍,比如1.5倍、2倍、2.5倍和3倍,本申请在此不做限定,当然为了便于第二液体滴在第一液体上并对第一液体起到更好的挤压效果,比如第一面积的大小可以设置为第二液体初始面积大小的1.2倍。
参见图1,在某些实施方式中,所述涂布方法还包括:
S400、去除所述第一液体的表面的所述第二液体。
由于第二液体的作用就是在第一液体旋转扩散后通过重力对第一液体的表面进行挤压使第一液体的厚度均匀,所以在第一液体扩散完成之后就需要对第二液体进行去除。
在某些实施方式中,所述去除所述第一液体的表面的所述第二液体包括:
对所述第一液体和所述第二液体进行烘烤,使所述第二液体从所述第一液体的表面挥发。
在去除第一液体表面的第二液体的过程中,通过烘烤蒸发形式去除第二液体,由于第二液体位于第一液体的表面,所以在烘烤的过程中,第二液体蒸发完第一液体才会蒸发,可以通过控制蒸发时间精准的控制第二液体的去除。
在另一些实施方式中,所述去除所述第一液体的表面的所述第二液体还包括:通过吸附去除所述第二液体;或者通过激光烧蚀去除所述第二液体。比如,在第一液体在基板上扩散完成之后,可以通过吸附装置将第二液体从第一液体的表面吸走或者是可以通过激光装置对第二液体进行烧蚀剥离。
在某些实施方式中,所述第二液体包括易挥发液体。这样无需对第二液体进行处理,第二液体即可自行从第一液体的表面自动挥发,这样第二液体的去除过程更加简单。
在某些实施方式中,所述第一液体的沸点大于所述第二液体的沸点。
在上述实现过程中,由于第一液体的沸点大于第二液体的沸点,这样可以通过控制温度大于第二液体的沸点且小于第一液体的沸点来实现第二液体的去除,过程中无需精准的控制蒸发时间,操作更加方便。
在某些实施方式中,所述第一液体的表面张力小于所述基板的表面张力,所述第二液体的表面张力小于所述第一液体的表面张力,这样第一液体更加容易在基板上扩散铺展,第二液体更加容易在第一液体的表面扩散铺展。
在某些实施方式中,所述第一液体包括光刻胶。
由于光刻胶的粘度较大,在基板上扩散时容易出现中心区域和边缘区域厚度不一的情况,所以需要对光刻胶扩散的厚度进行调整,从而提高半导体产品的质量,在另一些实施方式中,所述第一液体还包括树脂等粘度较高的液体。
在某些实施方式中,所述第二液体包括全氟辛烷、四氢呋喃和甲基乙基酮。
由于全氟辛烷、四氢呋喃和甲基乙基酮均是半导体制造中常见的材料,容易获取,且全氟辛烷、四氢呋喃和甲基乙基酮的沸点均较小,比较容易通过蒸发的方式去除。
此外,参见图5,基于同样的发明构思,本申请还提供了一种涂布系统,包括:
基板;
第一液体注入装置,用于向所述基板之上滴第一液体;
第二液体注入装置,用于向所述基板之上滴第二液体;其中,所述第二液体与所述第一液体之间互不相溶,且所述第一液体的密度大于所述第二液体的密度;
基板旋转装置,用于驱动所述基板旋转,以使所述第一液体在所述基板的表面扩散以及使所述第二液体在所述第一液体的表面扩散。
本申请的涂布系统,通过第一液体注入装置向基板上滴第一液体,通过第二液体注入装置向基板之上滴第二液体,之后通过基板旋转装置旋转基板使第一液体在基板的表面扩散以及使第二液体在第一液体的表面扩散,通过第二液体的重力对第一液体的表面 进行挤压可以使第一液体的厚度更加均匀。
在某些实施方式中,所述的涂布系统还包括:
基板烘烤装置,用于对所述第一液体和所述第二液体进行烘烤。
本申请的涂布系统,将第一液体和第二液体在基板上扩散后放入到基板烘烤装置进行烘烤,这样第二液体便能够从第一液体的表面蒸发去除,除去第二液体的过程方便。
在某些实施方式中,所述第一液体包括光刻胶,所述第二液体包括全氟辛烷、四氢呋喃和甲基乙基酮。
本申请的涂布系统用于光刻胶涂布的厚度控制,第二液体采用全氟辛烷、四氢呋喃和甲基乙基酮与光刻胶具有很好的适应性,且容易去除,能够起到很好的使光刻胶涂布更加均匀的效果。
综上所述,本申请提供了一种涂布方法及涂布系统,其中,所述涂布方法包括:提供一基板,在所述基板之上滴第一液体;在所述第一液体之上滴第二液体;旋转所述基板使所述第一液体在所述基板的表面扩散以及使所述第二液体在所述第一液体的表面扩散,本申请的涂布方法由于在第一液体之上滴有与第一液体互不相溶的第二液体,且第一液体的密度大于第二液体的密度,这样第二液体就能始终处于第一液体之上,旋转基板,第一液体在离心力的作用下会向基板的边缘扩散,第二液体则会在离心力的作用下在第一液体的表面扩散,第一液体的表面由于受到第二液体的挤压作用,扩散后第一液体的厚度将会更加的均一。
应当理解的是,本申请的应用不限于上述的举例,对本领域普通技术人员来说,可以根据上述说明加以改进或变换,所有这些改进和变换都应属于本申请所附权利要求的保护范围。
Claims (20)
- 一种涂布方法,其特征在于,包括:提供一基板,在所述基板之上滴第一液体;在所述第一液体之上滴第二液体,其中,所述第一液体与所述第二液体之间互不相溶,且所述第一液体的密度大于所述第二液体的密度;旋转所述基板使所述第一液体在所述基板的表面扩散,以及使所述第二液体在所述第一液体的表面扩散。
- 根据权利要求1所述的涂布方法,其特征在于,所述在所述基板之上滴第一液体之后且在所述第一液体之上滴第二液体之前还包括:旋转所述基板使所述第一液体在所述基板的表面扩散至第一面积。
- 根据权利要求1或2所述的涂布方法,其特征在于,所述涂布方法还包括:去除所述第一液体的表面的所述第二液体。
- 根据权利要求3所述的涂布方法,其特征在于,所述去除所述第一液体的表面的所述第二液体包括:对所述第一液体和所述第二液体进行烘烤,使所述第二液体从所述第一液体的表面挥发。
- 根据权利要求1所述的涂布方法,其特征在于,所述第一液体的沸点大于所述第二液体的沸点。
- 根据权利要求1所述的涂布方法,其特征在于,所述第一液体包括光刻胶。
- 根据权利要求1所述的涂布方法,其特征在于,所述第二液体包括全氟辛烷、四氢呋喃和甲基乙基酮。
- 根据权利要求1所述的涂布方法,其特征在于,所述第一液体滴在所述基板的表面的中心。
- 根据权利要求1所述的涂布方法,其特征在于,所述第二液体滴在所述第一液体的表面的中心。
- 根据权利要求1所述的涂布方法,其特征在于,所述旋转所述基板包括:先以第一速度顺时针旋转所述基板至第一预设时间,之后以第二速度逆时针旋转所述基板至第二预设时间,其中,所述第一速度大于所述第二速度。
- 根据权利要求2所述的涂布方法,其特征在于,所述第一面积的大小至少为所述基板的总面积的1/3。
- 根据权利要求2所述的涂布方法,其特征在于,所述第一面积的大小为所述第 二液体的初始面积大小的1-3倍。
- 根据权利要求3所述的涂布方法,其特征在于,所述去除所述第一液体的表面的所述第二液体还包括:通过吸附去除所述第二液体;或者通过激光烧蚀去除所述第二液体。
- 根据权利要求1所述的涂布方法,其特征在于,所述第一液体的表面张力小于所述基板的表面张力,所述第二液体的表面张力小于所述第一液体的表面张力。
- 根据权利要求1所述的涂布方法,其特征在于,所述第二液体包括易挥发液体。
- 一种涂布系统,其特征在于,包括:基板;第一液体注入装置,用于向所述基板之上滴第一液体;第二液体注入装置,用于向所述第一液体之上滴第二液体;其中,所述第二液体与所述第一液体之间互不相溶,且所述第一液体的密度大于所述第二液体的密度;基板旋转装置,用于驱动所述基板旋转,以使所述第一液体在所述基板的表面扩散,以及使所述第二液体在所述第一液体的表面扩散。
- 根据权利要求16所述的涂布系统,其特征在于,还包括:基板烘烤装置,用于对所述第一液体和所述第二液体进行烘烤。
- 根据权利要求16所述的涂布系统,其特征在于,所述第一液体包括光刻胶。
- 根据权利要求16所述的涂布系统,其特征在于,所述第二液体包括全氟辛烷、四氢呋喃和甲基乙基酮。
- 根据权利要求16所述的涂布系统,其特征在于,所述第一液体的沸点大于所述第二液体的沸点。
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