WO2021184909A1 - 阵列基板、显示装置 - Google Patents

阵列基板、显示装置 Download PDF

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Publication number
WO2021184909A1
WO2021184909A1 PCT/CN2020/140884 CN2020140884W WO2021184909A1 WO 2021184909 A1 WO2021184909 A1 WO 2021184909A1 CN 2020140884 W CN2020140884 W CN 2020140884W WO 2021184909 A1 WO2021184909 A1 WO 2021184909A1
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WIPO (PCT)
Prior art keywords
wiring
array substrate
conductive layer
trace
layer
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PCT/CN2020/140884
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English (en)
French (fr)
Inventor
赵重阳
Original Assignee
京东方科技集团股份有限公司
北京京东方显示技术有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方显示技术有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/417,293 priority Critical patent/US20220328527A1/en
Publication of WO2021184909A1 publication Critical patent/WO2021184909A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0223—Compensation for problems related to R-C delay and attenuation in electrodes of matrix panels, e.g. in gate electrodes or on-substrate video signal electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only

Definitions

  • the present disclosure relates to the field of display technology, and in particular to an array substrate and a display device.
  • GOA Gate on Array
  • the gate drive circuit In the field of display technology, in order to reduce the frame size of the array substrate, more and more products begin to adopt GOA (Gate on Array) technology, that is, the gate drive circuit is integrated on the array substrate.
  • the gate drive circuit usually needs to be driven by multiple clock signals to generate a shift signal.
  • multiple clock traces extend along the cascade direction of the shift register unit, and the clock signal needs to be transmitted from the clock trace to the gate drive circuit through the clock lead-out line. Because the length of the clock lead-out line is different, the clock lead-out line will be different. Different overlapping capacitors are generated from other structural layers (for example, the BM area at the edge of the color filter substrate), which results in different signal delays of the clock signal on different clock lead-out lines, and finally causes horizontal mura on the display panel.
  • a capacitance compensation area is usually provided in the edge wiring area of the array substrate, and each clock lead-out line has a different meander length in the capacitance compensation area, so that each clock leads The lines have the same length.
  • the capacitance compensation area will increase the frame width of the array substrate.
  • an array substrate which includes: a base substrate, a plurality of first wiring lines, a plurality of second wiring lines, and a plurality of connection electrodes.
  • a plurality of first traces are disposed on the first conductive layer; a plurality of second traces are disposed on the second conductive layer, and the first conductive layer and the second conductive layer are located in different layers; and a plurality of connecting electrodes are disposed on the third conductive layer.
  • the connecting electrode is connected to the first wiring and the second wiring respectively to connect the corresponding first wiring and the second wiring; wherein, the orthographic projection area of the connecting electrode on the base substrate is not complete same.
  • At least part of the second traces have different lengths; each of the second traces and the connection electrode connected to the second trace and the connection electrode connected to the second trace and the overlap capacitance generated by a target structure layer The sum is equal.
  • the third conductive layer and the first conductive layer and the second conductive layer are located in different layers, and the connection electrode is connected to the first wiring and the second conductive layer through a via hole, respectively. Two wiring connections.
  • the array substrate includes a transistor, the first conductive layer includes a gate layer for forming the gate of the transistor, and the second conductive layer includes a gate layer for forming the transistor.
  • the array substrate includes a substrate, and the second conductive layer is located on a side of the first conductive layer away from the substrate; the third conductive layer and the second conductive layer are The conductive layers are arranged in the same layer, and the connection electrode is connected to the first wiring through a via hole, and is connected to the second wiring in the same layer.
  • a plurality of the first traces extend along a first direction and are spaced apart along a second direction, and the second traces extend along the second direction and are distributed along the first direction. Distributed at intervals in one direction, wherein the first direction and the second direction are different.
  • the array substrate includes an edge wiring area, the first wiring and the second wiring are located in the edge wiring area, and the first wiring of the second wiring is One end is connected to the first wiring, and the second end of the second wiring extends to the edge of the edge wiring area.
  • the first trace is a clock trace in the gate drive circuit
  • the second trace is a clock lead-out line in the gate drive circuit
  • the clock trace It extends along the cascade direction of the shift register unit in the gate drive circuit and is used to provide a clock signal to the shift register unit
  • the first end of the clock lead-out line is connected to the clock trace
  • the second end of the lead wire extends to the edge of the edge wiring area to connect to the shift register unit in the gate driving circuit.
  • the clock trace is formed by a hollow metal grid
  • the orthographic projection of the connecting electrode on the array substrate is at least part of the metal grid on the front of the base substrate. The projections coincide.
  • the second trace includes a connecting portion, and an orthographic projection of the connecting portion on the base substrate and an orthographic projection of the connecting electrode on the base substrate are at least partially Coincident;
  • the connecting portion includes a main body extending in a third direction, an extension connected to the main body, the extension extending in a fourth direction, and the third direction is different from the fourth direction.
  • a display device including the above-mentioned array substrate.
  • FIG. 1 is a schematic diagram of the structure of an array substrate in the related art
  • FIG. 2 is a schematic diagram of the structure of a display panel in the related art
  • FIG. 3 is a schematic structural diagram of another exemplary embodiment of an array substrate in the related art
  • FIG. 4 is a schematic diagram of the structure of an exemplary embodiment of the disclosed array substrate
  • FIG. 5 is a schematic diagram of the structure of the first conductive layer in FIG. 4;
  • FIG. 6 is a schematic diagram of the structure of the second conductive layer in FIG. 4;
  • FIG. 7 is a schematic diagram of the structure of the third conductive layer in FIG. 4;
  • Figure 8 is a cross-sectional view of the dotted line A-A in Figure 4.
  • Figure 9 is a partial enlarged view of Figure 7;
  • FIG. 10 is a schematic structural diagram of another exemplary embodiment of the array substrate of the present disclosure.
  • FIG. 11 is a schematic diagram of the structure of the second conductive layer in FIG. 10;
  • FIG. 12 is a schematic diagram of the structure of the third conductive layer in FIG. 10;
  • Figure 13 is a partial enlarged view of Figure 11;
  • Figure 14 is a partial enlarged view of Figure 12;
  • 15 is a schematic structural diagram of another array substrate of the present disclosure.
  • Fig. 16 is a partial enlarged view of the second wiring CLK1' in Fig. 15;
  • Fig. 17 is a cross-sectional view at the dotted line A-A in Fig. 15.
  • FIG. 1 it is a schematic diagram of the structure of an array substrate in the related art.
  • a gate driving circuit GOA is integrated on the array substrate, and the gate driving circuit GOA needs to generate a shift signal according to a plurality of different clock signals.
  • the array substrate in order to input different clock signals to the gate driving circuit GOA, the array substrate needs to be provided with multiple clock traces CLK1, CLK2, CLK3 and multiple clock lead lines CLK1', CLK2', CLK3'.
  • the multiple clock traces CLK1, CLK2, CLK3 extend along the first direction X of the cascade of shift register units, and are distributed along the second direction Y at intervals; multiple clock lead lines CLK1', CLK2', CLK3' extend along the second direction
  • the direction Y extends and is spaced apart along the first direction X.
  • the clock lead-out lines are arranged crosswise with multiple clock traces, in order to avoid short-circuiting the clock lead-out lines and the clock traces that do not need to be connected, the clock lead-out lines and the clock traces can be arranged on different conductive layers.
  • the target structure layer can be any structure layer that can generate overlapping capacitance with the clock lead-out line.
  • FIG. 2 it is a schematic structural diagram of a display panel in the related art.
  • the display panel may include an array substrate 31 and a color filter substrate 32.
  • the array substrate 31 and the color filter substrate 32 are encapsulated by an encapsulation layer 33.
  • Liquid crystal layer 34 The edge of the color filter substrate includes a BM area 321, and the target structure layer may be a BM area on the edge of the color filter substrate.
  • FIG. 3 it is a schematic structural diagram of another exemplary embodiment of an array substrate in the related art.
  • a capacitance compensation area 1 can be provided in the edge routing area of the array substrate.
  • Each clock lead-out line CLK1', CLK2', CLK3' has a different bending length in the capacitance compensation area. So that each clock lead wire has the same length.
  • the capacitance compensation area 1 will increase the frame width of the array substrate.
  • gate drive circuits of different structures require different numbers of clock traces and clock lead-out lines.
  • the shift register in the gate drive circuit also has a different connection with the clock lead-out line. .
  • FIG. 4 is a schematic diagram of an exemplary embodiment of the array substrate of the present disclosure
  • FIG. 5 is the structure of the first conductive layer in FIG. Structural schematic diagram
  • FIG. 6 is a schematic structural diagram of the second conductive layer in FIG. 4
  • FIG. 7 is a schematic structural diagram of the third conductive layer in FIG.
  • the array substrate includes: a base substrate 40, a plurality of first traces CLK1, CLK2, CLK3, a plurality of second traces CLK1', CLK2', CLK3', and a plurality of connecting electrodes 11, 12, 13.
  • a plurality of first traces are disposed on the first conductive layer; a plurality of second traces are disposed on the second conductive layer, and the first conductive layer and the second conductive layer are located in different layers; and a plurality of connecting electrodes are disposed on the third conductive layer. Layer, the connecting electrodes are respectively connected to the first and second wirings to connect the corresponding first and second wirings. As shown in FIG.
  • the first wiring CLK1 can be connected through The electrode 11 is connected to the second wiring CLK1', the first wiring CLK2 can be connected to the second wiring CLK2' through the connecting electrode 12, and the first wiring CLK3 can be connected to the second wiring CLK3' through the connecting electrode 13; ,
  • the orthographic projection areas of the connecting electrodes on the base substrate 40 are not completely the same. As shown in FIGS. 4 and 7, the orthographic projection areas of the connecting electrodes 11, 12, and 13 on the array substrate are not the same.
  • the first wiring may be a clock lead
  • the second wiring may be a clock lead-out line.
  • the second traces CLK1', CLK2', and CLK3' have different lengths.
  • the length of the second trace CLK1' can be less than the length of the second trace CLK2', and the length of the second trace CLK2' can be less than the length of the second trace.
  • the overlap capacitance between the BM area on the edge of the substrate); the overlap capacitance between the second trace CLK2' and the target structure layer (for example, the BM area on the edge of the color filter substrate) is smaller than the overlap capacitance between the second trace CLK3' and The overlap capacitance between the target structure layers (for example, it may be the BM area on the edge of the color filter substrate).
  • the present disclosure can compensate the overlap capacitance between the clock lead-out line and the target structure layer (for example, the BM area on the edge of the color filter substrate) by connecting electrodes 11, 12, 13 with different orthographic projection areas on the base substrate, where the connection
  • the orthographic projection area of the electrode 11 on the base substrate may be larger than the orthographic projection area of the connecting electrode 12 on the base substrate, and the orthographic projection area of the connecting electrode 12 on the base substrate may be greater than the orthographic projection area of the connecting electrode 13 on the base substrate.
  • the overlapping capacitance formed between the electrode 11 and the target structure layer is greater than the overlapping capacitance formed between the connecting electrode 12 and the target structure layer; the overlapping capacitance formed between the connecting electrode 12 and the target structure layer is larger than the connecting electrode 13 and the target structure
  • the overlapping capacitance formed between the layers because the connecting electrode 11 is electrically connected to the second wiring CLK1', the connecting electrode 12 is electrically connected to the second wiring CLK2', and the connecting electrode 13 is electrically connected to the second wiring CLK3', thereby ,
  • the total overlap capacitance formed by the connection electrode 11, the second wiring CLK1' and the target structure may be equal to the total overlap capacitance formed by the connection electrode 12, the second wiring CLK2' and the target structure, and may be equal to the connection electrode 13, the second wiring CLK2' and the target structure.
  • FIG. 4 only exemplarily shows three first traces and three second traces. It should be understood that the present disclosure does not account for the number of first traces and second traces.
  • the first trace and the second trace can also be other numbers.
  • the first wiring and the second wiring may also be other signal lines that transmit signals to other driving circuits.
  • the sum of the overlap capacitance generated by each of the second wiring and the connecting electrode connected to it and a target structure layer is equal. This setting can make the signal have the same delay time on each second trace. It should be understood that in other exemplary embodiments, the sum of the overlap capacitance generated by the second trace and the connection electrode connected to it and a target structure layer may not be equal, and the area of the connection electrode can be adjusted. Adjust the delay time of the signal on each second trace.
  • FIG. 8 is a cross-sectional view at the dashed line AA in FIG. Including the first wiring CLK1), the second conductive layer (including the second wiring CLK1') are located in different layers, the first wiring CLK1 may be arranged on one side of the base substrate, and the first wiring CLK1 is away from the base substrate 40
  • the first insulating layer 41 may be provided on one side of the first insulating layer
  • the second wiring CLK1' may be provided on the side of the first insulating layer 41 away from the base substrate 40
  • the second wiring CLK1' may be located on the side away from the base substrate 40
  • a second insulating layer 42 is provided.
  • the connecting electrode 11 may be connected to the first trace CLK1 through a second via 422 that penetrates the first insulating layer 41 and the second insulating layer 42, and the connecting electrode may be connected to the first trace CLK1 through a first via 421 that penetrates the second insulating layer. Connect with the second trace CLK1'.
  • the white square hole represents the first via 421
  • the black square hole represents the second via 422.
  • the array substrate may include a transistor, which may be a transistor in a pixel driving circuit
  • the first conductive layer may also include a gate layer for forming the gate of the transistor
  • the second conductive layer may also It may include a source-drain layer for forming the source and drain of the transistor.
  • the array substrate may include a pixel electrode, and the third conductive layer may further include a pixel electrode layer for forming the pixel electrode. That is, the first trace can be formed in the same layer as the gate layer and formed by a patterning process; the second trace can be formed in the same layer as the source and drain layer; and the connection electrode can be formed in the same layer as the pixel electrode layer.
  • the first wiring CLK1 and the second wiring CLK1' may be formed of metal or alloy.
  • the first wiring CLK1 and the second wiring CLK1' may be copper, silver, aluminum, or other metals or alloys.
  • the connecting electrode is arranged on the metal layer of the pixel electrode.
  • the connecting electrode can form a larger capacitance with the BM area of the color filter substrate; on the other hand, the transparent connecting electrode can also facilitate display
  • the encapsulating glue is cured through the array substrate through external ultraviolet rays; on the other hand, in the manufacturing process of the array substrate itself, it is necessary to pass a mask etching process to the pixel electrode layer and the pixel electrode layer before forming the pixel electrode layer.
  • the insulating layer between the active layers is etched to form a via hole connecting the pixel electrode and the source and drain of the driving transistor, the connecting electrode is arranged on the pixel electrode layer, and the connecting electrode is connected to the first and second wirings.
  • the via hole can be formed by sharing the above-mentioned mask etching process, thereby simplifying the manufacturing process.
  • each clock trace may include a plurality of first metal mesh lines extending in the first direction X and second metal mesh lines extending in the second direction Y.
  • the clock trace CLK1 includes There are a plurality of first metal grid lines 45 and second metal grid lines 46.
  • the connecting electrode may cover a plurality of adjacent second metal grid lines of the same clock trace in the first direction X.
  • the connecting electrode 11 may cover a plurality of adjacent second metal grid lines on the clock trace CLK1 in the first direction X.
  • Two metal grid lines 46; the connection electrode can cover at least one first metal grid line in the second direction Y, for example, the connection electrode 11 can cover two adjacent first metal grid lines in the second direction Y 45.
  • the array substrate may be provided with a plurality of second vias 422 at intervals in the first direction, the orthographic projection of the second vias on the base substrate is located within the range of the orthographic projection of the metal grid on the base substrate, and the connection electrodes may pass through a plurality of The second via hole is connected to a first metal grid line of the metal grid.
  • a plurality of second via holes may be correspondingly provided between every two adjacent second metal grid lines. For example, as shown in FIG. Three second via holes 422 are provided between the metal grid lines.
  • the array substrate may also be provided with a plurality of first vias 421 at intervals in the first direction X, and the orthographic projection of the first vias 421 on the base substrate may be located within the range of the orthographic projection of the second trace CLK1' on the base substrate
  • the connection electrode 11 may be electrically connected to the second wiring CLK1' through a plurality of first via holes 421.
  • a plurality of first vias 421 may be correspondingly provided between every two adjacent second metal grid lines. For example, as shown in FIG. Three first via holes 421 are provided between the second metal grid lines 46.
  • the thickness of each position of the second insulating layer 42 and the third conductive layer is approximately the same. Therefore, the portion 111 of the connecting electrode 11 located directly above the second wiring CLK1'
  • the connecting electrode 11 of other parts has a certain height difference, that is, a step difference.
  • the boundary between the 111 part and the other parts has a climbing structure A, and the shear stress of the connecting electrode is concentrated at the climbing structure.
  • the second trace CLK1' may include a connecting portion 61.
  • the orthographic projection of the connecting portion 61 on the base substrate and the orthographic projection of the connecting electrode on the base substrate at least partially overlap, so that the connecting electrode 11 passes through the connection
  • the portion 61 is connected to the second trace CLK1'.
  • the connecting portion 61 only extends in the first direction X, as shown in FIG. 9, it is a partial enlarged view of FIG.
  • the long boundary 112 (the position of the solid line, that is, the extension direction of the climbing structure) extends along the first direction X. Therefore, the shear stress of the connecting electrode 11 is mainly concentrated on the boundary 112, which easily causes the connecting electrode 11 to break along the boundary 112.
  • FIG. 10 is a schematic structural diagram of another exemplary embodiment of an array substrate of the present disclosure
  • FIG. 11 is a schematic structural diagram of the second conductive layer in FIG. 10 12 is a schematic diagram of the structure of the third conductive layer in FIG. 10.
  • Fig. 13 is a partial enlarged view of Fig. 11.
  • Fig. 14 is a partial enlarged view of Fig. 12.
  • the main difference between the array substrate shown in FIG. 10 and the array substrate shown in FIG. 4 is that the second wiring has a connecting portion with a different structure. As shown in FIG.
  • the second trace CLK1' may include a connecting portion 81, and the orthographic projection of the connecting portion 81 on the base substrate at least partially overlaps with the orthographic projection of the connecting electrode on the base substrate.
  • the connecting portion 81 may include a main body portion 811 extending along the third direction X', an extension portion 812 connected to the main body portion 811, the extension portion 812 extending along the fourth direction Y', and the third The direction is different from the fourth direction.
  • the principle of the bump structure of the connecting electrode is the same as that in FIG. Directional convex structure. Since the connecting portion 81 includes an extending portion 812, as shown in FIG.
  • the boundary 112 (the solid line position, that is, the extending direction of the climbing structure) between the convex portion 111 of the connecting electrode 11 and the other portion includes a portion extending in the third direction. And the part extending in the fourth direction, therefore, the connecting electrode 11 can disperse its shear stress in different directions, so that the connecting electrode is not easily broken.
  • the connecting portion of each second trace may include multiple protrusions, as shown in FIG. 11, the second trace CLK1' may include two protrusions, the second trace CLK2', the second trace CLK3' may include one protrusion.
  • the third direction may be the same as the extension direction of the first trace, and the fourth direction may be the same as the extension direction of the second trace.
  • the connecting electrode 11 may be connected to the first wiring CLK1 through the second via 422, and the connecting electrode may be connected to the second wiring CLK1' through the first via 421.
  • the white square hole represents the first via 421, and the black square hole represents the second via 422.
  • Each clock trace may include a plurality of first metal mesh lines extending in the first direction X and a second metal mesh line extending in the second direction Y.
  • the clock trace CLK1 includes a plurality of first metal mesh lines.
  • the grid lines and the second metal grid lines 46, wherein the plurality of first metal grid lines include adjacent first metal grid lines 451 and 452.
  • the array substrate may be provided with a plurality of second vias 422 at intervals in the first direction, and the orthographic projection of the second vias 422 on the base substrate is located within the range of the orthographic projection of the first metal grid line 451 on the base substrate.
  • the electrode may be connected to the first metal grid line 451 through a plurality of second via holes 422.
  • the orthographic projection of the main body portion 811 of the second trace CLK1' on the base substrate may be located within the range of the orthographic projection of the first metal grid line 452 on the base substrate, and the array substrate may be provided with a plurality of first lines spaced in the first direction.
  • the orthographic projection of the first via 421 on the base substrate may be located within the orthographic projection range of the main portion 811 of the second trace CLK1' on the base substrate, and the connection electrode 11 may pass through the plurality of first vias.
  • the hole 421 is electrically connected to the main body 811 of the second trace CLK1'.
  • the extension portion 812 of the second trace CLK1' may extend along the second direction Y, so that the orthographic projection of the extension portion 812 on the base substrate coincides with the orthographic projection of the first metal grid line 451 on the base substrate.
  • the first via hole 421 may be provided between the second via holes 422.
  • connection electrode 11 the first wiring CLK1, and the second wiring CLK1'
  • other correspondingly connected connection electrodes, the first wiring, and the second wiring of the via holes can be arranged in the same way as the connection electrode 11, the first wiring CLK1, the second wiring CLK1'. .
  • FIG. 15 is a schematic structural diagram of another array substrate of the present disclosure
  • FIG. 16 is a schematic diagram of the second trace CLK1' in FIG. Partially enlarged view
  • Fig. 17 is a cross-sectional view at the dotted line A-A in Fig. 15.
  • the array substrate may include: a base substrate 61, a plurality of first wirings CLK1, CLK2, CLK3, a plurality of second wirings CLK1', CLK2', CLK3', and a plurality of connecting electrodes 11, 12, 13.
  • a plurality of first traces are disposed on the first conductive layer; a plurality of second traces are disposed on the second conductive layer, and the first conductive layer and the second conductive layer are located in different layers; and a plurality of connecting electrodes are disposed on the third conductive layer.
  • the connecting electrodes are respectively connected to the first and second wirings to connect the corresponding first and second wirings. As shown in FIG.
  • the first wiring CLK1 can be connected to The electrode 11 is connected to the second wiring CLK1', the first wiring CLK2 can be connected to the second wiring CLK2' through the connecting electrode 12, and the first wiring CLK3 can be connected to the second wiring CLK3' through the connecting electrode 13; ,
  • the orthographic projection area of the connecting electrode on the base substrate is not exactly the same.
  • the third conductive layer can be arranged in the same layer as the second conductive layer, that is, formed by a patterning process.
  • the first wiring CLK1 is arranged on one side of the base substrate 61, and the side of the first wiring CLK1 away from the base substrate 61 is provided with a first insulating layer 41, and the connecting electrode 11 may be located on the first wiring CLK1 away from the substrate.
  • One side of the base substrate 61; the connecting electrode 11 can be connected to the first wiring CLK1 through a via hole penetrating the first insulating layer 41, and connected to the second wiring CLK1' in the same layer.
  • a plurality of the first traces may extend along the first direction X and be spaced apart along the second direction Y, and the second traces may extend along the second direction.
  • Y extends and is spaced apart along the first direction X, wherein the first direction X and the second direction Y are different. Since the first wiring and the second wiring are arranged crosswise, in order to prevent the second wiring from being short-circuited with the first wiring that does not need to be connected, the second wiring and the first wiring need to be provided on different conductive layers.
  • the array substrate may include an edge wiring area
  • the first wiring and the second wiring may be located in the edge wiring area, and the first end of the second wiring The first trace is connected, and the second end of the second trace extends to the edge of the edge trace area.
  • the clock trace may be formed by a hollow metal grid. This structure can also facilitate the curing of the packaging glue through external ultraviolet rays through the array substrate when the display panel is packaged in the box.
  • the exemplary embodiment also provides a display panel including the above-mentioned array substrate.
  • This exemplary embodiment also provides a display device including the above-mentioned array substrate.
  • the display device may be a display device such as a TV, a mobile phone, or a tablet computer.

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Abstract

本公开涉及显示技术领域，提出一种阵列基板、显示装置。该阵列基板包括：衬底基板、多条第一走线、多条第二走线、多个连接电极。多条第一走线设置于第一导电层；多条第二走线设置于第二导电层，所述第一导电层和第二导电层位于不同层；多个连接电极设置于第三导电层，所述连接电极分别与第一走线和第二走线连接，以连接相对应的所述第一走线和第二走线；其中，连接电极在衬底基板的正投影面积不完全相同。该阵列基板能够解决由于第二走线长度不一致，从而导致的第二走线上信号延时不一致的问题。

Description

阵列基板、显示装置
相关申请的交叉引用
本申请要求于2020年03月19日递交的、名称为《阵列基板、显示装置》的中国专利申请第202010197224.1号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开涉及显示技术领域，尤其涉及一种阵列基板、显示装置。
背景技术
在显示技术领域中，为了减小阵列基板的边框尺寸，越来越多的产品开始采用GOA(Gate on Array)技术，即将栅极驱动电路集成在阵列基板上。在GOA技术中，栅极驱动电路通常需要通过多个时钟信号驱动以生成移位信号。相关技术中，多条时钟走线沿移位寄存器单元的级联方向延伸，时钟信号需要通过时钟引出线从时钟走线传递到栅极驱动电路，由于时钟引出线的长度不同，时钟引出线会与其他结构层(例如彩膜基板边沿的BM区域)产生不同的交叠电容，从而导致时钟信号在不同时钟引出线上产生不同的信号延时，最终造成显示面板出现横纹Mura。
相关技术中，为避免显示面板出现横纹Mura，通常在阵列基板的边沿走线区设置电容补偿区域，每根时钟引出线在该电容补偿区域具有不同的蜿蜒长度，从而使得每根时钟引出线具有相同的长度。
然而，电容补偿区域会增加阵列基板的边框宽度。
需要说明的是，在上述背景技术部分公开的信息仅用于加强对本公开的背景的理解，因此可以包括不构成对本领域普通技术人员已知的现有技术的信息。
公开内容
根据本公开的一个方面，提供一种阵列基板，该阵列基板包括：衬底基板、多条第一走线、多条第二走线、多个连接电极。多条第一走线设置于第一导电层；多条第二走线设置于第二导电层，所述第一导电层和第二导电层位于不同层；多个连接电极设置于第三导电层，所述连接电极分别与第一走线和第二走线连接，以连接相对应的所述第一走线和第二走线；其中，连接电极在衬底基板的正投影面积不完全相同。
本公开的一种示例性实施例中，至少部分所述第二走线具有不同的长度；每条所述第二走线和与其连接的所述连接电极与一目标结构层产生的交叠电容之和均相等。
本公开的一种示例性实施例中，所述第三导电层和所述第一导电层、第二导电层位于不同层，所述连接电极分别通过过孔与所述第一走线、第二走线连接。
本公开的一种示例性实施例中，所述阵列基板包括晶体管，所述第一导电层包括用于形成所述晶体管栅极的栅极层，所述第二导电层包括用于形成所述晶体管源漏极的源漏层；所述阵列基板包括像素电极，所述第三导电层包括用于形成所述像素电极的像素电极层。
本公开的一种示例性实施例中，所述阵列基板包括基板，所述第二导电层位于所述第一导电层背离所述基板的一侧；所述第三导电层与所述第二导电层同层设置，所述连接电极通过过孔与所述第一走线连接，且与所述第二走线同层连接。
本公开的一种示例性实施例中，多条所述第一走线沿第一方向延伸且沿第二方向间隔分布，所述第二走线沿所述第二方向延伸且沿所述第一方向间隔分布，其中，所述第一方向和所述第二方向不同。
本公开的一种示例性实施例中，所述阵列基板包括边沿走线区，所述第一走线和所述第二走线位于所述边沿走线区，所述第二走线的第一端连接所述第一走线，所述第二走线的第二端延伸至所述边沿走线区的边沿。
本公开的一种示例性实施例中，所述第一走线为栅极驱动电路中的时钟走线，所述第二走线为栅极驱动电路中的时钟引出线；所述时钟走线沿所述栅极驱动电路中移位寄存器单元的级联方向延伸，用于向所述移位寄存器单元提供时钟信号；所述时钟引出线的第一端连接所述时钟走线，所述时钟引出线的第二端延伸至所述边沿走线区的边沿，以连接所述栅极驱动电路中的移位寄存器单元。
本公开的一种示例性实施例中，所述时钟走线由镂空的金属网格形成，所述连接电极在所述阵列基板的正投影至少和部分所述金属网格在衬底基板的正投影重合。
本公开的一种示例性实施例中，所述第二走线包括连接部，所述连接部在所述衬底基板的正投影与所述连接电极在所述衬底基板的正投影至少部分重合；所述连接部包括沿第三方向延伸的主体部、连接于所述主体部的延伸部，所述延伸部沿第四方向延伸，且所述第三方向与所述第四方向不同。
根据本公开的一个方面，提供一种显示装置，该显示装置包括上述的阵列基板。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本公开。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本公开的实施例， 并与说明书一起用于解释本公开的原理。显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为相关技术中一种阵列基板的结构示意图；
图2为相关技术中一种显示面板的结构示意图；
图3为相关技术中阵列基板另一种示例性实施例的结构示意图；
图4为本公开阵列基板一种示例性实施例的结示意图；
图5为图4中第一导电层的结构示意图；
图6为图4中第二导电层的结构示意图；
图7为图4中第三导电层的结构示意图；
图8为图4中虚线A-A处的剖视图；
图9为图7的局部放大图；
图10为本公开阵列基板另一种示例性实施例的结构示意图；
图11为图10中第二导电层的结构示意图；
图12为图10中第三导电层的结构示意图；
图13为图11中的局部放大图；
图14为图12中的局部放大图；
图15为本公开另一种阵列基板的结构示意图；
图16为图15中第二走线CLK1’的局部放大图；
图17为图15中虚线A-A处的剖视图。
具体实施方式
现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的范例；相反，提供这些实施方式使得本公开将更加全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施方式中。在下面的描述中，提供许多具体细节从而给出对本公开的实施方式的充分理解。然而，本领域技术人员将意识到，可以实践本公开的技术方案而省略所述特定细节中的一个或更多，或者可以采用其它的方法、组元、装置、步骤等。在其它情况下，不详细示出或描述公知技术方案以避免喧宾夺主而使得本公开的各方面变得模糊。
此外，附图仅为本公开的示意性图解，并非一定是按比例绘制。图中相同的附图标记表示相同或类似的部分，因而将省略对它们的重复描述。附图中所示的一些方框图是功能 实体，不一定必须与物理或逻辑上独立的实体相对应。可以采用软件形式来实现这些功能实体，或在一个或多个硬件模块或集成电路中实现这些功能实体，或在不同网络和/或处理器装置和/或微控制器装置中实现这些功能实体。
用语“一个”、“一”、“该”和“所述”用以表示存在一个或多个要素/组成部分/等；用语“包括”和“具有”用以表示开放式的包括在内的意思并且是指除了列出的要素/组成部分/等之外还可存在另外的要素/组成部分/等；用语“第一”和“第二”等仅作为标记使用，不是对其对象的数量限制。
如图1所示，为相关技术中一种阵列基板的结构示意图。该阵列基板上集成有栅极驱动电路GOA，栅极驱动电路GOA需要根据多个不同的时钟信号以生成移位信号。如图1所示，为向栅极驱动电路GOA输入不同的时钟信号，阵列基板需要设置多条时钟走线CLK1、CLK2、CLK3和多条时钟引出线CLK1’、CLK2’、CLK3’。多条时钟走线CLK1、CLK2、CLK3沿移位寄存器单元的级联的第一方向X延伸，且沿第二方向Y间隔分布；多条时钟引出线CLK1’、CLK2’、CLK3’沿第二方向Y延伸，且沿第一方向X间隔分布。其中，由于时钟引出线与多个时钟走线交叉设置，为避免时钟引出线与非需要连接的时钟走线短路，时钟引出线和时钟走线可以设置于不同的导电层。根据图1可以看出，由于时钟引出线连接时钟走线的位置不同(黑点位置为连接位置)，时钟引出线CLK1’、CLK2’、CLK3’具有不同的长度，不同长度的时钟引出线会与目标结构层产生不同的交叠电容从而会导致时钟信号在不同的时钟引出线上产生不同的信号延时，最终造成显示面板出现横纹Mura。该目标结构层可以为能够与时钟引出线产生交叠电容的任一结构层。如图2所示，为相关技术中一种显示面板的结构示意图，该显示面板可以包括阵列基板31和彩膜基板32，阵列基板31和彩膜基板32通过封装层33封装位于其之间的液晶层34。彩膜基板的边沿包括有BM区域321，目标结构层可以为彩膜基板边沿的BM区域。
相关技术中，如图3所示，为相关技术中阵列基板另一种示例性实施例的结构示意图。为解决上述横纹Mura的技术问题，可以在阵列基板的边沿走线区设置电容补偿区域1，每根时钟引出线CLK1’、CLK2’、CLK3’在该电容补偿区域具有不同的弯折长度，从而使得每个时钟引出线具有相同的长度。然而，电容补偿区域1会增加阵列基板的边框宽度。应该理解的是，在相关技术中，不同结构的栅极驱动电路需要不同条数的时钟走线和时钟引出线，同时，栅极驱动电路中移位寄存器也与时钟引出线具有不同的连接方式。
基于此，本示例性实施例提供一种阵列基板，如图4-7所示，图4为本公开阵列基板一种示例性实施例的结示意图，图5为图4中第一导电层的结构示意图，图6为图4中第二导电层的结构示意图，图7为图4中第三导电层的结构示意图。该阵列基板包括：衬底 基板40、多条第一走线CLK1、CLK2、CLK3，多条第二走线CLK1’、CLK2’、CLK3’、多个连接电极11、12、13。多条第一走线设置于第一导电层；多条第二走线设置于第二导电层，所述第一导电层和第二导电层位于不同层；多个连接电极设置于第三导电层，所述连接电极分别与第一走线和第二走线连接，以连接相对应的所述第一走线和第二走线，如图4所示，第一走线CLK1可以通过连接电极11与第二走线CLK1’连接，第一走线CLK2可以通过连接电极12与第二走线CLK2’连接，第一走线CLK3可以通过连接电极13与第二走线CLK3’连接；其中，连接电极在衬底基板40的正投影面积不完全相同，如图4、7所示，连接电极11、12、13在阵列基板上的正投影面积不相同。
本示例性实施例中，第一走线可以为时钟引线，第二走线可以为时钟引出线。第二走线CLK1’、CLK2’、CLK3’具有不同的长度，其中，第二走线CLK1’的长度可以小于第二走线CLK2’的长度，第二走线CLK2’的长度可以小于第二走线CLK3’的长度。因此，第二走线CLK1’与一目标结构层(例如，可以是彩膜基板边沿的BM区域)之间的交叠电容小于第二走线CLK2’与目标结构层(例如，可以是彩膜基板边沿的BM区域)之间的交叠电容；第二走线CLK2’与目标结构层(例如，可以是彩膜基板边沿的BM区域)之间的交叠电容小于第二走线CLK3’与目标结构层(例如，可以是彩膜基板边沿的BM区域)之间的交叠电容。本公开可以通过在衬底基板具有不同正投影面积的连接电极11、12、13补偿时钟引出线与目标结构层(例如，彩膜基板边沿的BM区域)之间的交叠电容，其中，连接电极11在衬底基板的正投影面积可以大于连接电极12在衬底基板的正投影面积，连接电极12在衬底基板的正投影面积可以大于连接电极13在衬底基板的正投影面积，连接电极11与目标结构层之间形成的交叠电容大于连接电极12与目标结构层之间形成的交叠电容；连接电极12与目标结构层之间形成的交叠电容大于连接电极13与目标结构层之间形成的交叠电容，由于连接电极11与第二走线CLK1’电连接，连接电极12与第二走线CLK2’电连接，连接电极13与第二走线CLK3’电连接，从而，连接电极11、第二走线CLK1’与目标结构形成的总交叠电容可以等于连接电极12、第二走线CLK2’与目标结构形成的总交叠电容，同时可以等于连接电极13、第二走线CLK3’与目标结构形成的总交叠电容。从而栅极驱动信号在每条第二走线上可以具有相同的延时时长，进而避免了显示面板出现横纹Mura。
本示例性实施例中，图4仅示例性的画出了3条第一走线和3条第二走线，应该理解的是，本公开不对第一走线和第二走线的条数进行限定，第一走线和第二走线还可以为其他条数。在其他示例性实施例中，第一走线和第二走线还可以为向其他驱动电路传输信号的其他信号线。
本示例性实施例中，每条所述第二走线和与其连接的所述连接电极与一目标结构层产生的交叠电容之和均相等。该设置可以使得信号在每条第二走线上具有相同的延时时长。应该理解的是，在其他示例性实施例中，所述第二走线和与其连接的所述连接电极与一目标结构层产生的交叠电容之和可以不相等，通过调节连接电极的面积可以调节信号在各条第二走线上的延时时长。
本示例性实施例中，如图4、8所示，图8为图4中虚线A-A处的剖视图，所述第三导电层(包括有连接电极层11)可以和所述第一导电层(包括第一走线CLK1)、第二导电层(包括第二走线CLK1’)位于不同层，第一走线CLK1可以设置于衬底基板的一侧，第一走线CLK1背离衬底基板40的一侧可以设置有第一绝缘层41，第二走线CLK1’可以设置于第一绝缘层41背离衬底基板40的一侧，第二走线CLK1’背离衬底基板40的一侧可以设置有第二绝缘层42。所述连接电极11可以通过贯穿第一绝缘层41、第二绝缘层42的第二过孔422与所述第一走线CLK1连接，连接电极可以通过贯穿第二绝缘层的第一过孔421与第二走线CLK1’连接。如图4所示，白色方孔表示第一过孔421，黑色方孔表示第二过孔422。其中，所述阵列基板可以包括晶体管，该晶体管可以为像素驱动电路中的晶体管，所述第一导电层还可以包括用于形成所述晶体管栅极的栅极层，所述第二导电层还可以包括用于形成所述晶体管源漏极的源漏层。所述阵列基板可以包括像素电极，所述第三导电层还可以包括用于形成所述像素电极的像素电极层。即，第一走线可以和栅极层同层成型，通过一次构图工艺形成；第二走线可以和源漏层同层成型；连接电极可以和像素电极层同层成型。其中，第一走线CLK1和第二走线CLK1’可以由金属或合金形成，例如，第一走线CLK1和第二走线CLK1’可以为铜、银、铝等金属或合金。将连接电极设置于像素电极金属层，一方面，由于像素电极层靠近彩膜基板，连接电极可以与彩膜基板的BM区域形成较大的电容；另一方面，透明的连接电极还可以便于显示面板在对盒封装时，通过外部紫外线透过阵列基板对封装胶进行固化；再一方面，在阵列基板自身制作过程中，形成像素电极层之前需要通过一次掩膜刻蚀工艺对像素电极层和有源层之间的绝缘层进行刻蚀，以形成连接像素电极和驱动晶体管源漏极的过孔，将连接电极设置于像素电极层，连接连接电极和第一走线、第二走线的过孔可以共用上述掩膜刻蚀工艺形成，从而简化了制作工艺。
本示例性实施例中，如图4所示，所述时钟走线CLK1、CLK2、CLK3可以由镂空的金属网格形成，该金属网格的镂空区域可以为矩形。所述连接电极11、12、13在所述衬底基板的正投影至少和部分所述金属网格在衬底基板的正投影重合，从而可以使得连接电极11、12、13可以分别通过第二过孔422与对应的金属网格连接。如图4所示，每条时 钟走线可以包括多根沿第一方向X延伸的第一金属网格线和沿第二方向Y延伸的第二金属网格线，例如，时钟走线CLK1包括有多根第一金属网格线45和第二金属网格线46。连接电极可以在第一方向X上覆盖同一时钟走线的相邻的多条第二金属网格线，例如，连接电极11在第一方向X上覆盖时钟走线CLK1上相邻的多条第二金属网格线46；连接电极可以在第二方向Y上覆盖至少一条第一金属网格线，例如，连接电极11可以在第二方向Y上覆盖两条相邻的第一金属网格线45。阵列基板可以在第一方向上间隔设置多个第二过孔422，第二过孔的在衬底基板的正投影位于金属网格在衬底基板的正投影范围内，连接电极可以通过多个第二过孔与金属网格的一条第一金属网格线连接。其中，在第一方向X上，每相邻的两条第二金属网格线之间可以对应设置多个第二过孔，例如图4所示，阵列基板在每相邻的两条第二金属网格线之间设置有3个第二过孔422。阵列基板还可以在第一方向X上间隔设置多个第一过孔421，第一过孔421的在衬底基板的正投影可以位于第二走线CLK1’在衬底基板的正投影范围内，连接电极11可以通过多个第一过孔421与第二走线CLK1’电连接。其中，在第一方向X上，每相邻的两条第二金属网格线之间可以对应设置多个第一过孔421，例如，图4所示，阵列基板在每相邻的两条第二金属网格线46之间设置有3个第一过孔421。
如图8所示，由于阵列基板制作工艺的原因，第二绝缘层42和第三导电层每个位置的厚度近似相等，因此，连接电极11位于第二走线CLK1’正上方的部分111与其他部分的连接电极11具有一定高度差，即段差，111部分与其他部分的边界具有爬坡结构A，连接电极的剪切应力集中在该爬坡结构处。如图6所示，第二走线CLK1’可以包括连接部61，该连接部61在衬底基板的正投影与连接电极在衬底基板的正投影至少部分重合，以使连接电极11通过连接部61与第二走线CLK1’连接，当连接部61仅沿第一方向X延伸时，如图9所示，为图7的局部放大图，连接电极11凸起的111部分与其他部分的长边界112(实线位置，即爬坡结构的延伸方向)沿第一方向X延伸，因此，连接电极11的剪切应力主要集中在边界112上，从而容易造成连接电极11沿边界112断裂。
本示例性实施例中，如图10、11、12、13所示，图10为本公开阵列基板另一种示例性实施例的结构示意图，图11为图10中第二导电层的结构示意图，图12为图10中第三导电层的结构示意图。图13为图11中的局部放大图。图14为图12中的局部放大图。图10所示的阵列基板与图4所示的阵列基板主要区别在于第二走线具有不同结构的连接部。如图13所示，所述第二走线CLK1’可以包括连接部81，所述连接部81在所述衬底基板上的正投影与所述连接电极在衬底基板的正投影至少部分重合；所述连接部81可以包括沿第三方向X’延伸的主体部811、连接于所述主体部811的延伸部812，所述延伸部812 沿第四方向Y’延伸，且所述第三方向与所述第四方向不同。如图14所示，与图8中连接电极存在凸起结构的原理相同，连接电极11在衬底基板正投影与连接部81在衬底基板正投影重合的部位111为沿垂直于衬底基板方向的凸起结构。由于连接部81包括延伸部812，如图14所示，连接电极11的凸起部位111与其他部分的边界112(实线位置，即爬坡结构的延伸方向)包括沿第三方向延伸的部分和沿第四方向延伸的部分，因此，该连接电极11可以将其剪切应力分散在不同的方向上，从而使得该连接电极不易折断。其中，每条第二走线的连接部可以包括多个凸起部，如图11所示，第二走线CLK1’可以包括两个凸起部，第二走线CLK2’、第二走线CLK3’可以包括1个凸起部。本示例性实施例中，所述第三方向可以与所述第一走线的延伸方向相同，所述第四方向可以与所述第二走线的延伸方向相同。
如图10、13所示，所述连接电极11可以通过第二过孔422与所述第一走线CLK1连接，连接电极可以通过第一过孔421与第二走线CLK1’连接。如图10所示，白色方孔表示第一过孔421，黑色方孔表示第二过孔422。每条时钟走线可以包括多根沿第一方向X延伸的第一金属网格线和沿第二方向Y延伸的第二金属网格线，例如，时钟走线CLK1包括有多根第一金属网格线和第二金属网格线46，其中，多根第一金属网格线包括相邻的第一金属网格线451、452。阵列基板可以在第一方向上间隔设置多个第二过孔422，第二过孔422的在衬底基板的正投影位于第一金属网格线451在衬底基板的正投影范围内，连接电极可以通过多个第二过孔422与第一金属网格线451连接。第二走线CLK1’的主体部811在衬底基板的正投影可以位于第一金属网格线452在衬底基板正投影的范围内，阵列基板可以在第一方向上间隔设置多个第一过孔421，第一过孔421的在衬底基板的正投影可以位于第二走线CLK1’的主体部811在衬底基板的正投影范围内，连接电极11可以通过该多个第一过孔421与第二走线CLK1’的主体部811电连接。第二走线CLK1’的延伸部812可以沿第二方向Y延伸，以使延伸部812在衬底基板的正投影与第一金属网格线451在衬底基板的正投影部分重合，从而还可以在第二过孔422之间设置第一过孔421。
应该理解的是，接电极11、第一走线CLK1、第二走线CLK1’之间的过孔还可以有其他的设置方式。同时，其他对应连接的连接电极、第一走线、第二走线之间的过孔设置方式可以与连接电极11、第一走线CLK1、第二走线CLK1’之间过孔设置方式相同。
应该理解的是，在其他示例性实施例中，所述第一导电层、第二导电层还可以设置于其他导电层。第三导电层还可以位于其他导电层，例如，如图15、16、17所示，图15为本公开另一种阵列基板的结构示意图，图16为图15中第二走线CLK1’的局部放大图。图17为图15中虚线A-A处的剖视图。该阵列基板可以包括：衬底基板61、多条第一走线 CLK1、CLK2、CLK3，多条第二走线CLK1’、CLK2’、CLK3’、多个连接电极11、12、13。多条第一走线设置于第一导电层；多条第二走线设置于第二导电层，所述第一导电层和第二导电层位于不同层；多个连接电极设置于第三导电层，所述连接电极分别与第一走线和第二走线连接，以连接相对应的所述第一走线和第二走线，如图15所示，第一走线CLK1可以通过连接电极11与第二走线CLK1’连接，第一走线CLK2可以通过连接电极12与第二走线CLK2’连接，第一走线CLK3可以通过连接电极13与第二走线CLK3’连接；其中，连接电极在衬底基板的正投影面积不完全相同。如图16、17所示，所述第三导电层可以与所述第二导电层同层设置，即通过一次构图工艺成型。第一走线CLK1设置于衬底基板61的一侧，第一走线CLK1背离衬底基板61的一侧设置有第一绝缘层41，连接电极11可以位于第一走线CLK1背离所述衬底基板61的一侧；所述连接电极11可以通过贯穿第一绝缘层41的过孔与所述第一走线CLK1连接，且与所述第二走线CLK1’同层连接。
本示例性实施例中，如图4所示，多条所述第一走线可以沿第一方向X延伸且沿第二方向Y间隔分布，所述第二走线可以沿所述第二方向Y延伸且沿所述第一方向X间隔分布，其中，所述第一方向X和所述第二方向Y不同。由于第一走线与第二走线交叉设置，为避免第二走线与非需要连接的第一走线短路，第二走线和第一走线需要设置于不同的导电层。
本示例性实施例中，所述阵列基板可以包括边沿走线区，所述第一走线和所述第二走线可以位于所述边沿走线区，所述第二走线的第一端连接所述第一走线，所述第二走线的第二端延伸至所述边沿走线区的边沿。
本示例性实施例中，如图4所示，所述时钟走线可以由镂空的金属网格形成。该结构还可以便于显示面板在对盒封装时，通过外部紫外线透过阵列基板对封装胶进行固化。
本示例性实施例还提供一种显示面板，该显示面板包括上述的阵列基板。
本示例性实施例还提供一种显示装置，该显示装置包括上述的阵列基板。该显示装置可以为电视、手机、平板电脑等显示装置。
本领域技术人员在考虑说明书及实践这里公开的内容后，将容易想到本公开的其他实施例。本申请旨在涵盖本公开的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本公开的真正范围和精神由权利要求指出。
应当理解的是，本公开并不局限于上面已经描述并在附图中示出的精确结构，并且可 以在不脱离其范围进行各种修改和改变。本公开的范围仅由所附的权利要求来限定。

Claims (11)

  1. 一种阵列基板，其中，包括：
    衬底基板；
    多条第一走线，设置于第一导电层；
    多条第二走线，设置于第二导电层，所述第一导电层和第二导电层位于不同层；
    多个连接电极，设置于第三导电层，所述连接电极分别与第一走线和第二走线连接，以连接相对应的所述第一走线和第二走线；
    其中，连接电极在衬底基板的正投影面积不完全相同。
  2. 根据权利要求1所述的阵列基板，其中，至少部分所述第二走线具有不同的长度；
    每条所述第二走线和与其连接的所述连接电极与一目标结构层产生的交叠电容之和均相等。
  3. 根据权利要求1所述的阵列基板，其中，所述第三导电层和所述第一导电层、第二导电层位于不同层，所述连接电极分别通过过孔与所述第一走线、第二走线连接。
  4. 根据权利要求1所述的阵列基板，其中，所述阵列基板包括晶体管，所述第一导电层包括用于形成所述晶体管栅极的栅极层，所述第二导电层包括用于形成所述晶体管源漏极的源漏层；
    所述阵列基板包括像素电极，所述第三导电层包括用于形成所述像素电极的像素电极层。
  5. 根据权利要求1所述的阵列基板，其中，
    所述阵列基板包括基板，所述第二导电层位于所述第一导电层背离所述基板的一侧；
    所述第三导电层与所述第二导电层同层设置，所述连接电极通过过孔与所述第一走线连接，且与所述第二走线同层连接。
  6. 根据权利要求1所述的阵列基板，其中，多条所述第一走线沿第一方向延伸且沿第二方向间隔分布，所述第二走线沿所述第二方向延伸且沿所述第一方向间隔分布，其中，所述第一方向和所述第二方向不同。
  7. 根据权利要求6所述的阵列基板，其中，所述阵列基板包括边沿走线区，所述第一走线和所述第二走线位于所述边沿走线区，所述第二走线的第一端连接所述第一走线，所述第二走线的第二端延伸至所述边沿走线区的边沿。
  8. 根据权利要求7所述的阵列基板，其中，
    所述第一走线为栅极驱动电路中的时钟走线，所述第二走线为栅极驱动电路中 的时钟引出线；
    所述时钟走线沿所述栅极驱动电路中移位寄存器单元的级联方向延伸，用于向所述移位寄存器单元提供时钟信号；
    所述时钟引出线的第一端连接所述时钟走线，所述时钟引出线的第二端延伸至所述边沿走线区的边沿，以连接所述栅极驱动电路中的移位寄存器单元。
  9. 根据权利要求8所述的阵列基板，其中，所述时钟走线由镂空的金属网格形成，所述连接电极在所述阵列基板的正投影至少和部分所述金属网格在衬底基板的正投影重合。
  10. 根据权利要求3所述的阵列基板，其中，所述第二走线包括连接部，所述连接部在所述衬底基板的正投影与所述连接电极在所述衬底基板的正投影至少部分重合；
    所述连接部包括沿第三方向延伸的主体部、连接于所述主体部的延伸部，所述延伸部沿第四方向延伸，且所述第三方向与所述第四方向不同。
  11. 一种显示装置，其中，包括权利要求1-10任一项所述的阵列基板。
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CN111384066B (zh) * 2020-03-19 2022-03-08 京东方科技集团股份有限公司 阵列基板、显示装置
CN111624827B (zh) * 2020-06-28 2023-01-10 京东方科技集团股份有限公司 阵列基板、显示面板和显示装置
CN211577626U (zh) * 2020-08-24 2020-09-25 深圳市华星光电半导体显示技术有限公司 显示面板
US11874575B2 (en) * 2020-08-24 2024-01-16 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel having first and second wires extended and arranged in the same direction in the bezel region
CN112433415A (zh) * 2020-12-02 2021-03-02 深圳市华星光电半导体显示技术有限公司 阵列基板、显示面板及电子设备
CN113325637A (zh) 2021-05-31 2021-08-31 Tcl华星光电技术有限公司 显示面板
CN113189808A (zh) * 2021-06-09 2021-07-30 合肥京东方显示技术有限公司 一种阵列基板、显示面板及显示设备
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