WO2021139656A1 - 有机电致发光结构及其制作方法、显示装置 - Google Patents

有机电致发光结构及其制作方法、显示装置 Download PDF

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Publication number
WO2021139656A1
WO2021139656A1 PCT/CN2021/070358 CN2021070358W WO2021139656A1 WO 2021139656 A1 WO2021139656 A1 WO 2021139656A1 CN 2021070358 W CN2021070358 W CN 2021070358W WO 2021139656 A1 WO2021139656 A1 WO 2021139656A1
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Prior art keywords
layer
base substrate
anode
hole injection
intervals
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PCT/CN2021/070358
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English (en)
French (fr)
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刘李
卢鹏程
杨盛际
张逵
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京东方科技集团股份有限公司
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Priority to US17/423,864 priority Critical patent/US11871595B2/en
Publication of WO2021139656A1 publication Critical patent/WO2021139656A1/zh
Priority to US17/886,475 priority patent/US11968853B2/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • This application relates to the field of display technology, and in particular to an organic electroluminescence structure, a manufacturing method thereof, and a display device.
  • OLED Organic Light-Emitting Diodes
  • silicon-based OLED displays use monocrystalline silicon as an active drive backplane, they have excellent characteristics such as high pixel density, high integration, small size, easy portability, good shock resistance, and ultra-low power consumption. It is currently one of the hotspots in display technology research. One.
  • the existing silicon-based OLEDs are prone to crosstalk between different sub-pixels.
  • HIL hole injection layer directly in contact with each anode is a common layer provided throughout the entire layer. And it has low resistivity. Therefore, the HIL layer with low resistivity easily leads to conduction between sub-pixels.
  • the purpose of the present application is to provide an organic electroluminescence structure, a manufacturing method thereof, and a display device, which can improve the crosstalk problem caused by the low resistivity of the hole injection layer, thereby improving the display effect.
  • the first aspect of the application provides an organic electroluminescence structure, which includes:
  • the passivation protection layer is formed on one side of the base substrate; the side of the passivation protection layer away from the base substrate is formed with a plurality of inscribed portions arranged at intervals, and the inscribed portions have a direction toward the base substrate.
  • the first surface of the base substrate and the second surface away from the base substrate, the orthographic projection of the first surface on the base substrate is located on the front of the second surface on the base substrate In the projection, there is a non-zero distance between the edge of the first surface and the edge of the second surface;
  • the anode layer includes a plurality of anodes arranged at intervals, and each of the anodes is correspondingly formed on the second surface;
  • the organic light-emitting functional layer has a hole injection layer, the hole injection layer includes a plurality of hole injection blocks arranged at intervals, and each of the hole injection blocks is correspondingly formed on one of the anodes;
  • the cathode layer is formed on the side of the organic light-emitting function layer away from the anode layer.
  • the cross-sectional area of the inscribed portion gradually increases, and the cross-sectional area is a surface parallel to the base substrate.
  • the orthographic projection of the first surface on the base substrate is located in a central area of the orthographic projection of the second surface on the base substrate.
  • the thickness of the inscribed portion is greater than the thickness of the hole injection layer.
  • the thickness of the inscribed part is to
  • the anode is a transparent electrode.
  • it further includes a metal composite layer having a plurality of metal composite parts arranged at intervals, and each of the metal composite parts is connected to one of the anodes;
  • the metal composite part includes a metal protective film, a metal reflective film, and a first conductive connection block that are sequentially stacked and arranged on the base substrate, and the metal reflective film is located on the side of the inscribed part away from the anode, The first conductive connecting block passes through the inscribed portion and is connected to the anode.
  • a driving circuit is further included, which is arranged on a side of the metal composite layer close to the base substrate, wherein:
  • the driving circuit includes a transistor, the transistor and the metal composite layer are connected through a second first conductive connection block, the transistor has a semiconductor layer, and the semiconductor layer is located inside the base substrate.
  • the second aspect of the present application provides a manufacturing method of an organic electroluminescence structure, which includes:
  • a passivation protective layer and an anode layer are formed on one side of the base substrate; the side of the passivation protective layer away from the base substrate is formed with a plurality of inscribed portions arranged at intervals, and the inscribed portions have Facing the first surface of the base substrate and the second surface away from the base substrate, the orthographic projection of the first surface on the base substrate is located on the second surface on the base substrate In the orthographic projection, and there is a non-zero distance between the edge of the first surface and the edge of the second surface; the anode layer includes a plurality of anodes arranged at intervals, and each anode is correspondingly formed on the Second side
  • the hole injection layer includes a plurality of hole injection blocks arranged at intervals, and each of the hole injection blocks is formed in a corresponding On the anode
  • a cathode layer is formed on the side of the organic light-emitting function layer away from the anode layer.
  • Forming a passivation protection layer and an anode layer on one side of the base substrate includes:
  • the anode material and the side of the passivation protection material away from the base substrate are sequentially patterned to form the anode layer and the passivation protection layer with a plurality of inscribed portions arranged at intervals.
  • the anode material and the side of the passivation protection material away from the base substrate are sequentially patterned to form the anode layer and have a plurality of spaces.
  • the passivation protection layer of the inscribed part is provided, including:
  • the second dry engraving process which is mainly isotropic, is used to pattern the side of the passivation protection material away from the base substrate to form a plurality of inscribed portions arranged at intervals.
  • forming an organic light-emitting functional layer with a hole injection layer on the base substrate includes:
  • the hole injection material is vapor-deposited on the base substrate formed with the inscribed portion by an evaporation process to form a hole injection layer including a plurality of hole injection blocks arranged at intervals.
  • the third aspect of the present application provides a display device, which includes the organic electroluminescence structure described in any one of the above.
  • a hole injection layer can be subsequently formed by forming a plurality of spaced inscribed portions on the side of the passivation protection layer away from the base substrate At the same time, it plays a role of blocking, that is, the formed hole injection layer is divided into a plurality of spaced hole injection blocks, and each hole injection block corresponds to an anode. Since the hole injection blocks on each anode are arranged at intervals (ie, independent of each other), the conduction between the sub-pixels due to the low resistivity of the hole injection layer can be improved, thereby causing crosstalk problems and improving the display effect.
  • the organic electroluminescent structure does not need to add additional process steps to prepare, the preparation process is simple, and there is no need to add a photomask.
  • FIG. 1 is a schematic diagram of an organic electroluminescence structure according to an embodiment of the application.
  • FIG. 2 is a schematic diagram of the organic electroluminescence structure according to another embodiment of the application.
  • FIG. 3 is a schematic diagram of the organic electroluminescence structure according to another embodiment of the application.
  • FIG. 4 is a schematic diagram of a display device according to another embodiment of the application.
  • FIG. 6 is a schematic diagram after completing step S302;
  • Fig. 7 is a schematic diagram after step S3040 is completed.
  • Base substrate 11. Anode; 12. Hole injection block; 13. Hole transport layer; 14. Organic light-emitting layer; 15. Electron transport layer; 16. Electron injection layer; 17, Cathode layer; 18. Metal Protective film; 19. Metal reflective film; 20. First conductive connection block; 21. Passivation protective layer; 210. Inscribed part; 22. Packaging film; 23. Color film substrate; 24. Second conductive connection block; 25 26. Drain electrode; 27. Semiconductor layer; 28. Gate; 29. Gate insulating layer; 30. Hole injection waste.
  • the first solution is to introduce a hole injection layer with high resistivity to improve this problem.
  • the new hole injection layer is expensive to research, the introduction period is long, and the high resistivity of the hole injection layer will affect the injection of hole ions ,
  • the anode needs a larger voltage to obtain high hole ion implantation.
  • Solution 2 In the large-size OLED process, the usual way to improve this problem is to use a photomask with a pixel pattern during organic material evaporation to isolate the organic material between different sub-pixels, but the silicon-based OLED pixel size is small , This method is not suitable for silicon-based OLEDs.
  • the organic electroluminescence structure may include a base substrate 10, a passivation protection layer, an anode layer, and an organic light-emitting function. Layer and cathode layer; among them:
  • the base substrate 10 may be a silicon substrate, but is not limited to this, and may also be a type, depending on the specific situation.
  • the active layer ie, the semiconductor layer
  • the source electrode and the drain electrode of the transistor can be formed in the silicon substrate 101 through a doping process.
  • the base substrate 10 takes the base substrate 10 as a silicon substrate as an example.
  • the passivation protection layer 21 is formed on one side of the base substrate 10; the side of the passivation protection layer 21 away from the base substrate 10 is formed with a plurality of inscribed portions 210 arranged at intervals, and the inscribed portions 210 are facing the base substrate 10.
  • the first surface of the first surface and the second surface away from the base substrate 10, the orthographic projection of the first surface on the base substrate 10 is located in the orthographic projection of the second surface on the base substrate 10, and the edge of the first surface and the first surface There is a non-zero distance between the edges of the two sides. In other words, the edge of the orthographic projection of the first surface on the base substrate 10 and the edge of the orthographic projection of the second surface on the base substrate 10 do not coincide.
  • the hole injection layer can be subsequently formed as a barrier, that is: The hole injection layer is separated into a plurality of spaced hole injection blocks 12, so the design does not need to add additional process steps to prepare, and the preparation process is simple.
  • the anode layer may include a plurality of anodes 11 arranged at intervals, and each anode 11 is correspondingly formed on the second surface of the inscribed portion 210.
  • the area corresponding to each anode 11 can be understood as a sub-pixel area.
  • the anode 11 may be electrically connected to the source and drain electrodes in the silicon substrate.
  • the anode layer may be formed after patterning.
  • the organic light-emitting functional layer has a hole injection layer.
  • the hole injection layer includes a plurality of hole injection blocks 12 arranged at intervals, and each hole injection block 12 is correspondingly formed on an anode 11. Since the hole injection blocks 12 on each anode 11 in the present embodiment are arranged at intervals (ie, independent of each other), compared to the hole injection layer in the related art, the hole injection layer is a common layer (ie: the hole injection layer is not patterned). Even if the hole injection layer has a low resistivity, the conduction between the sub-pixels can be avoided, so that the crosstalk problem between the sub-pixels can be improved, and the display effect can be improved.
  • the organic light emitting functional layer not only has a hole injection layer, but also has a hole transport layer 13, an organic light emitting layer 14, an electron transport layer 15, and an electron injection layer 16.
  • the layer 14, the electron transport layer 15, and the electron injection layer 16 can be formed on the entire surface by evaporation and other processes, so as to reduce the use of a photomask with a pixel pattern, thereby reducing the cost; but not limited to this, the hole transport layer 13
  • the specific structures of the organic light-emitting layer 14, the electron transport layer 15, and the electron injection layer 16 can be determined according to specific requirements.
  • whole-surface formation (full-surface arrangement) mentioned in this application refers to a structure that has not been patterned and is integrally connected.
  • the organic electroluminescence structure of this embodiment is a silicon-based OLED
  • the organic light-emitting layer 14 in the organic light-emitting functional layer may be formed on the whole surface.
  • the material of the organic light-emitting layer 14 may preferably emit white light.
  • the organic electroluminescence structure needs to be matched with the color filter substrate 23 to form a display device together.
  • the cathode layer 17 is formed on the side of the organic light emitting function layer facing away from the anode layer.
  • the cathode layer 17 may be provided as a whole layer, that is, without patterning treatment, but it is not limited to this.
  • the specific structure of the cathode layer 17 may be determined according to specific requirements.
  • the material of the cathode layer may be a semi-transparent material, but it is not limited to this, and may also be a transparent material, depending on the specific situation.
  • the longitudinal section of the inscribed portion 210 in the passivation protection layer 21 in this embodiment may be an inverted trapezoid, and the longitudinal section may be a plane perpendicular to the base substrate 10; that is, from the first surface to the second surface In the two-sided direction, the cross-sectional area of the inscribed portion 210 gradually increases, which is convenient for manufacturing and molding; this cross-section is a plane perpendicular to the base substrate 10, but it is not limited to this.
  • the longitudinal section of the inscribed portion 210 may also be Type T, depending on the specific situation.
  • the orthographic projection of the first surface of the inscribed portion 210 on the base substrate 10 is located in the central area of the orthographic projection of the second surface on the base substrate 10, so that there is sufficient inscribed portion 210 everywhere. Cut the amount to ensure that when the hole injection layer is subsequently formed, a plurality of mutually independent hole injection blocks 12 can be separated. Preferably, the distance between the edge of the first surface and the edge of the second surface can be equal. .
  • the passivation protection layer 21 may be a single-layer or multi-layer structure, and the material of the passivation protection layer 21 may be an inorganic material, such as silicon oxide, etc., but is not limited to this, and may also be other inorganic insulating materials.
  • the thickness of the inscribed portion 210 in this example is greater than the thickness of the hole injection layer to ensure that when the hole injection layer is subsequently formed, a plurality of mutually independent hole injection blocks 12 can be separated.
  • the thickness of the inscribed portion 210 is to such as: Such a design can avoid the situation that the thickness of the inscribed portion is too small and the hole injection layer cannot be blocked, and it can also avoid the situation that the thickness of the inscribed portion is too large and the stability of the passivation protection layer 21 is weak, namely: While ensuring the existence of the inscribed portion can serve the purpose of blocking the hole injection layer, it can also ensure the structural stability of the entire passivation protection layer 21 and the protection effect of the passivation protection layer 21.
  • the longitudinal section of the anode 11 may be a regular trapezoid, but it is not limited to this, and may also have other shapes.
  • the anode 11 may be a transparent electrode.
  • the material of the anode 11 may include zinc (Zn), indium (In), or tin (Sn).
  • the anode 11 may be formed of oxides of zinc (Zn), indium (In) or tin (Sn), such as indium tin oxide (ITO), zinc oxide (ZnO), indium oxide (In2O3), tin oxide (SnO2) )Wait.
  • the material of the anode 11 may be composed of indium tin oxide (ITO).
  • the thickness of the anode 11 in this embodiment may be (Amy) to such as: In order to ensure good conductivity while having good transparency, but not limited to this, the thickness of the anode 11 can also be within other ranges, depending on the specific circumstances.
  • the organic electroluminescence structure may be top-emitting.
  • a metal may be formed on the side of the anode 11 facing the base substrate 10.
  • the composite layer, the metal composite layer may have a plurality of metal composite parts arranged at intervals, and each metal composite part is connected to an anode; the metal composite part can reflect the light emitted from the organic light emitting layer 14 to improve the display brightness.
  • the metal composite part may include a metal protective film 18, a metal reflective film 19, and a first conductive connection block 20 which are sequentially stacked on the base substrate 10; wherein, the metal reflective film 19 is located on the passivation protective layer 21 away from the anode.
  • the first conductive connecting block 20 is connected to the anode 11 through the passivation protection layer 21, that is, the passivation protection layer 21 is used to cover the metal composite layer to protect the metal composite layer to avoid metal The composite layer is oxidized and corroded.
  • the first conductive connection block 20 can be connected to the anode 11.
  • the metal protective film 18 can be connected to the source and drain electrodes in the silicon substrate, that is, the anode 11 can be connected to the source and drain electrodes in the silicon substrate through this metal composite part.
  • the orthographic projection of the metal reflective film 19 on the base substrate 10 may be located within the orthographic projection of the metal protective film 18 on the base substrate 10, or completely different from the orthographic projection of the metal protective film 18 on the base substrate 10. coincide.
  • the orthographic projection of the first conductive connection block 20 on the base substrate 10 may be within the orthographic projection of the first surface of the anode 11 on the base substrate 10.
  • the organic electroluminescence structure may further include a driving circuit, and the driving circuit is arranged on the side of the metal composite layer close to the base substrate.
  • the driving circuit may include a transistor, but is not limited to this, and may also include a capacitor and Signal lines, etc.
  • the transistor and the metal composite layer are connected through a second conductive connection block, specifically connected to the metal protective film 18 in the metal composite layer.
  • the transistor may have a semiconductor layer 27 located inside the base substrate 10, that is, when the base substrate 10 is a silicon substrate, the semiconductor layer 27 may belong to the silicon substrate. It should be understood that the transistor may also have a source electrode 25, a drain electrode 26, a gate 28, and a gate insulating layer 29.
  • the source electrode 25 and the drain electrode 26 may also form the inside of the silicon substrate. Specifically, Part of the structure in the silicon substrate can be processed through a doping process to form the semiconductor layer 27, the source electrode 25, and the drain electrode 26 of the transistor.
  • the material of the first conductive connection block 20 and the second conductive connection block 24 may be metallic tungsten, but it is not limited to this, and other conductive materials may also be used.
  • the metal reflective film 19 can be composed of a metal material with high reflectivity, such as aluminum, but is not limited to this, and other metal materials can also be used.
  • the metal protective film 18 can be a single-layer or multi-layer structure. The material of the metal protective film 18 can be one of titanium or titanium nitride.
  • the metal protective film 18 can be titanium nitride. It has high stability and does not react with other metals at room temperature. Therefore, titanium nitride is formed on one side of the metal reflective film 19 to protect the metal reflective film 19 and prevent the metal reflective film 19 from being oxidized and corroded; in addition, When the metal reflective film 19 is aluminum, since the chemical properties of titanium nitride are much related to the chemical properties of aluminum, there will be no similar compatibility problems, and titanium nitride has ultra-high heat resistance, so that it is on the first side of the aluminum layer. The titanium nitride layer is directly formed on the side, which does not reduce the conductivity of the aluminum layer, and then plays a protective role for the aluminum layer.
  • titanium nitride Due to the high resistivity of titanium nitride, when titanium nitride is used as a metal protective layer, the thickness of titanium nitride is not easy to be too thick.
  • the organic electroluminescence structure may further include an encapsulation film 22, which may be formed on the side of the cathode layer 17 away from the base substrate 10 for Protect the organic light-emitting functional layer in the organic electroluminescence structure.
  • the encapsulation film 22 may have a single-layer or multi-layer structure.
  • the encapsulation film 22 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer. The organic encapsulation layer and the inorganic encapsulation layer may be alternately arranged .
  • Another embodiment of the present application also provides a manufacturing method of an organic electroluminescence structure. As shown in FIG. 5, the manufacturing method may include:
  • Step S300 forming a base substrate 10
  • a passivation protection layer 21 and an anode layer are formed on one side of the base substrate 10; the passivation protection layer 21 is formed on the side of the passivation protection layer 21 away from the base substrate 10 with a plurality of inscribed portions 210 arranged at intervals, and the inscribed portions 210 It has a first surface facing the base substrate 10 and a second surface away from the base substrate 10.
  • the orthographic projection of the first surface on the base substrate 10 is within the orthographic projection of the second surface on the base substrate 10, and There is a non-zero distance between the edge of one surface and the edge of the second surface;
  • the anode layer includes a plurality of anodes 11 arranged at intervals, and each anode 11 is correspondingly formed on the second surface of the inscribed portion 210, as shown in FIG. 6 ;
  • Step S304 forming an organic light-emitting functional layer with a hole injection layer on the base substrate 10.
  • the hole injection layer includes a plurality of hole injection blocks 12 arranged at intervals, and each hole injection block 12 is correspondingly formed on an anode 11 ;
  • step S306 the cathode layer 17 is formed on the side of the organic light-emitting function layer away from the anode layer.
  • step S300 a base substrate 10 is formed. Since the preparation of the base substrate 10 is relatively mature, a detailed description will not be given here.
  • step S302 may include step S3020 and step S3022; wherein:
  • a passivation protection material and an anode material are sequentially formed on the base substrate 10; for example, the passivation protection material and the anode material can be formed on the base substrate 10 by magnetron sputtering, evaporation, or the like. on. It should be noted that the passivation protection material and the anode material are sequentially coated on the entire surface of the base substrate. The entire surface coating mentioned here means that the entire surface of the base substrate 10 is coated with this passivation. Protective materials and anode materials.
  • step S3022 the anode material and the passivation protection material are sequentially patterned on the side away from the base substrate 10 to form the anode layer and the passivation protection layer 21 with a plurality of inscribed portions 210 arranged at intervals.
  • this step S3022 may include: step S30220 and step S30222; wherein:
  • step S30220 a first dry etching process is used to pattern the anode material to form an anode layer.
  • This first dry engraving process can be mainly of homogeneity, but is not limited to this.
  • a second dry etching process based on isotropy is used to pattern the side of the passivation protection material away from the base substrate 10 to form a plurality of inscribed portions arranged at intervals.
  • the bias power can be controlled to make the etching dominated by isotropic, and then the passivation protection material is far away from the side of the base substrate 10 Perform patterning treatment.
  • a photolithography process may also be included; after the dry etching process is performed on the passivation protection material, a photoresist process may also be included.
  • the photolithography process and the glue removal process are relatively mature processes, and therefore, will not be described in detail here.
  • step S301 may be further included to form a driving circuit and a metal composite layer.
  • the structure and positional relationship of the driving circuit and the metal composite layer can be referred to the foregoing description of the organic electroluminescence structure, which will not be repeated here.
  • step S304 may include:
  • Step S3040 using an evaporation process to evaporate the hole injection material on the base substrate 10 formed with the inscribed portion 210 to form a hole injection layer including a plurality of hole injection blocks 12 arranged at intervals, as shown in FIG. 7
  • the hole injection block 12 wraps the anode 11, and this design increases the contact area between the hole injection block 12 and the anode 11, thereby improving carrier injection and improving the display effect.
  • the hole injection layer may further include a hole injection waste 30 formed on the base substrate 10 and located between adjacent anodes 11, and the hole injection waste 30 is separated from the hole injection block 12. It should be noted that since the hole injection waste 30 and the hole injection block 12 are already disconnected under the action of the inscribed portion 210, there is no need to remove the hole injection waste 30, which reduces the manufacturing difficulty.
  • the step S304 is not limited to the above step S3040.
  • the step S304 may further include the step S3042, namely: forming the hole transport layer 13, the organic light emitting layer 14, the electron transport layer 15, and the electron injection layer 16 in sequence.
  • the hole transport layer 13, the organic light emitting layer 14, the electron transport layer 15, and the electron injection layer 16 can be formed by an evaporation process, but it is not limited to this, and other forms can also be used.
  • the manufacturing method of the organic electroluminescence structure may further include step S308, namely: forming the encapsulation film 22 on the side of the cathode layer 17 away from the base substrate 10.
  • FIG. 4 Another embodiment of the present application also provides a display device, as shown in FIG. 4, which includes the organic electroluminescence structure described in any one of the above. But it is not limited to this.
  • the display device may further include a color film substrate 23, which may be formed on the organic electroluminescence The light-emitting side of the structure.
  • the specific type of the display device is not particularly limited.
  • the types of display devices commonly used in the field can be used, such as OLED displays, mobile phones, TVs, watches, etc.
  • the specific purpose of the equipment is selected accordingly, and will not be repeated here.
  • the display device in addition to the organic electroluminescence structure, the display device also includes other necessary components and components. Take the display as an example, such as a housing, a power cord, etc. The specific usage requirements of the ”should be supplemented accordingly, so I won’t repeat them here.

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Abstract

一种有机电致发光结构及其制作方法、显示装置。其中，有机电致发光结构包括：衬底基板（10）；钝化保护层（21），形成在衬底基板（10）的一侧；钝化保护层（21）远离衬底基板（10）的一侧形成有多个间隔设置的内切部（210），内切部（210）具有朝向衬底基板（10）的第一面及远离衬底基板（10）的第二面，第一面在衬底基板（10）上的正投影位于第二面在衬底基板（10）上的正投影内，且第一面的边缘与第二面的边缘之间具有非零间距；阳极层，包括多个间隔设置的阳极（11），每一阳极（11）对应形成在第二面上；有机发光功能层，具有空穴注入层，空穴注入层包括多个间隔设置的空穴注入块（12），每一空穴注入块（12）对应形成在一阳极（11）上；阴极层（17），形成在有机发光功能层背离阳极层的一侧，可改善串扰问题。

Description

有机电致发光结构及其制作方法、显示装置
交叉引用
本公开要求于2020年1月06日提交的申请号为202010009942.1名称为“有机电致发光结构及其制作方法、显示装置”的中国专利申请的优先权，该中国专利申请的全部内容通过引用全部并入本文。
技术领域
本申请涉及显示技术领域，具体而言，涉及一种有机电致发光结构及其制作方法、显示装置。
背景技术
OLED(Organic Light-Emitting Diodes，有机发光二极管)显示技术作为新型的显示技术，已广泛应用于智能手表、手机、平板电脑、显示器等领域。硅基OLED显示因为采用单晶硅作为有源驱动背板，具有高像素密度、高度集成、体积小、易于携带、抗震性能好、超低功耗等优异特性，是目前显示技术研究的热点之一。
但现有的硅基OLED容易出现不同亚像素之间发生串扰(Crosstalk)的问题，其中的一个重要原因是由于与各阳极直接接触的空穴注入层(HIL)为整层设置的共同层，且其具有低电阻率，因此，低电阻率的HIL层容易导致亚像素之间导通。
需要说明的是，在上述背景技术部分公开的信息仅用于加强对本申请的背景的理解，因此可以包括不构成对本领域普通技术人员已知的现有技术的信息。
公开内容
本申请的目的在于提供一种有机电致发光结构及其制作方法、显示装置，可以改善由于空穴注入层的低电阻率导致的串扰问题，从而可提高显示效果。
本申请第一方面提供了一种有机电致发光结构，其包括：
衬底基板；
钝化保护层，形成在所述衬底基板的一侧；所述钝化保护层远离所述衬底基板的一侧形成有多个间隔设置的内切部，所述内切部具有朝向所述衬底基板的第一面及远离所述衬底基板的第二面，所述第一面在所述衬底基板上的正投影位于所述第二面在所述衬底基板上的正投影内，且所述第一面的边缘与所述第二面的边缘之间具有非零间距；
阳极层，包括多个间隔设置的阳极，每一所述阳极对应形成在所述第二面上；
有机发光功能层，具有空穴注入层，所述空穴注入层包括多个间隔设置的空穴注入块，每一所述空穴注入块对应形成在一所述阳极上；
阴极层，形成在所述有机发光功能层背离所述阳极层的一侧。
在本申请的一种示例性实施例中，
自所述第一面至所述第二面的方向上，所述内切部的横截面面积逐渐增大，所述横截面为与所述衬底基板平行的面。
在本申请的一种示例性实施例中，
所述第一面在所述衬底基板上的正投影位于所述第二面在所述衬底基板上的正投影的中心区域。
在本申请的一种示例性实施例中，
所述内切部的厚度大于所述空穴注入层的厚度。
在本申请的一种示例性实施例中，
所述内切部的厚度为
Figure PCTCN2021070358-appb-000001
至
Figure PCTCN2021070358-appb-000002
在本申请的一种示例性实施例中，所述阳极为透明电极。
在本申请的一种示例性实施例中，还包括金属复合层，具有多个间隔设置的金属复合部，每一所述金属复合部与一所述阳极连接；
所述金属复合部包括依次层叠设置在所述衬底基板上的金属保护膜、金属反射膜及第一导电连接块，所述金属反射膜位于所述内切部远离所述阳极的一侧，所述第一导电连接块穿过所述内切部与所述阳极连接。
在本申请的一种示例性实施例中，还包括驱动电路，设置在所述金属复合层靠近所述衬底基板的一侧，其中，
所述驱动电路包括晶体管，所述晶体管与所述金属复合层通过第二第一导电连接块连接，所述晶体管具有半导体层，所述半导体层位于所 述衬底基板的内部。
本申请第二方面提供了一种有机电致发光结构的制作方法，其包括：
形成一衬底基板；
在所述衬底基板的一侧形成钝化保护层及阳极层；所述钝化保护层远离所述衬底基板的一侧形成有多个间隔设置的内切部，所述内切部具有朝向所述衬底基板的第一面及远离所述衬底基板的第二面，所述第一面在所述衬底基板上的正投影位于所述第二面在所述衬底基板上的正投影内，且所述第一面的边缘与所述第二面的边缘之间具有非零间距；所述阳极层包括多个间隔设置的阳极，每一所述阳极对应形成在所述第二面上；
在所述衬底基板上形成具有空穴注入层的有机发光功能层，所述空穴注入层包括多个间隔设置的空穴注入块，每一所述空穴注入块对应形成在一所述阳极上；
在所述有机发光功能层背离所述阳极层的一侧形成阴极层。
在本申请的一种示例性实施例中，
在所述衬底基板的一侧形成钝化保护层及阳极层，包括：
在所述衬底基板上依次形成钝化保护材料和阳极材料；
对所述阳极材料、所述钝化保护材料远离所述衬底基板的一侧依次进行图案化处理，以形成所述阳极层和具有多个间隔设置的内切部的钝化保护层。
在本申请的一种示例性实施例中，对所述阳极材料、所述钝化保护材料远离所述衬底基板的一侧依次进行图案化处理，以形成所述阳极层和具有多个间隔设置的内切部的钝化保护层，包括：
采用第一干刻工艺对所述阳极材料进行图案化处理，以形成所述阳极层；
采用以各项同性为主的第二干刻工艺对所述钝化保护材料远离所述衬底基板的一侧进行图案化处理，以形成多个间隔设置的内切部。
在本申请的一种示例性实施例中，在所述衬底基板上形成具有空穴注入层的有机发光功能层，包括：
采用蒸镀工艺将空穴注入材料蒸镀在形成有所述内切部的衬底基板 上，以形成包括多个间隔设置的空穴注入块的空穴注入层。
本申请第三方面提供了一种显示装置，其包括上述任一项所述的有机电致发光结构。
本申请提供的技术方案可以达到以下有益效果：
本申请所提供的有机电致发光结构及其制作方法、显示装置，通过将钝化保护层中远离衬底基板的一侧形成多个间隔设置的内切部，可在后续形成空穴注入层时起到隔断作用，即：将形成的空穴注入层隔断成多个间隔设置的空穴注入块，每一空穴注入块对应形成一阳极上。由于各阳极上的空穴注入块间隔设置(即：相互独立)，因此，可以改善由于空穴注入层的低电阻率而导致亚像素之间导通，从而发生串扰问题，提高了显示效果。此外，该有机电致发光结构不需要增加额外的工艺步骤来制备，制备流程简单，且不需要增加光罩。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本申请。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本申请的实施例，并与说明书一起用于解释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请一实施例所述的有机电致发光结构的示意图；
图2为本申请另一实施例所述的有机电致发光结构的示意图；
图3为本申请又一实施例所述的有机电致发光结构的示意图；
图4为本申请另一实施例所述的显示装置的示意图；
图5为本申请一实施例所述的有机电致发光结构的流程图；
图6为完成步骤S302之后的示意图；
图7为完成步骤S3040之后的示意图。
图1至图7中的标记：
10、衬底基板；11、阳极；12、空穴注入块；13、空穴传输层；14、 有机发光层，15、电子传输层；16、电子注入层；17、阴极层；18、金属保护膜；19、金属反射膜；20、第一导电连接块；21、钝化保护层；210、内切部；22、封装薄膜；23、彩膜基板；24、第二导电连接块；25、源电极；26、漏电极；27、半导体层；28、栅极；29、栅绝缘层；30、空穴注入废料。
具体实施方式
现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的实施方式；相反，提供这些实施方式使得本发明将全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。图中相同的附图标记表示相同或类似的结构，因而将省略它们的详细描述。
虽然本说明书中使用相对性的用语，例如“上”“下”来描述图标的一个组件对于另一组件的相对关系，但是这些术语用于本说明书中仅出于方便，例如根据附图中所述的示例的方向。能理解的是，如果将图标的装置翻转使其上下颠倒，则所叙述在“上”的组件将会成为在“下”的组件。当某结构在其它结构“上”时，有可能是指某结构一体形成于其它结构上，或指某结构“直接”设置在其它结构上，或指某结构通过另一结构“间接”设置在其它结构上。
用语“一个”、“一”、“该”、“所述”和“至少一个”用以表示存在一个或多个要素/组成部分/等；用语“包括”和“具有”用以表示开放式的包括在内的意思并且是指除了列出的要素/组成部分/等之外还可存在另外的要素/组成部分/等。
相关技术中，为了改善由于空穴注入层的低电阻率而导致不同亚像素之间发生串扰的问题，提出以下方案：
方案一，导入高电阻率的空穴注入层，以改善此问题，但是新的空穴注入层研究成本大，导入周期长，并且空穴注入层的高电阻率将会影响空穴离子的注入，阳极需要更大的电压来获得高的空穴离子注入。
方案二，在大型尺寸的OLED工艺中，通常改善此问题的方法是在有机材料蒸镀时使用具有像素图形的光罩，使不同亚像素间上的有机材 料隔离，但硅基OLED像素尺寸小，此方法不适用于硅基OLED。
基于上述技术问题，本申请一实施例提供了一种有机电致发光结构，如图1所示，此有机电致发光结构可包括衬底基板10、钝化保护层、阳极层、有机发光功能层及阴极层；其中：
此衬底基板10可为硅基板，但不限于此，也可为种类，视具体情况而定。举例而言，通过掺杂工艺在硅基板101中可形成晶体管的有源层(即半导体层)、源极和漏极。具体地，下面以衬底基板10为硅基板为例进行说明。
钝化保护层21形成在衬底基板10的一侧；钝化保护层21远离衬底基板10的一侧形成有多个间隔设置的内切部210，内切部210具有朝向衬底基板10的第一面及远离衬底基板10的第二面，第一面在衬底基板10上的正投影位于第二面在衬底基板10上的正投影内，且第一面的边缘与第二面的边缘之间具有非零间距。也就是说，第一面在衬底基板10上的正投影边缘与第二面在衬底基板10上的正投影边缘不重合。
本实施例中，通过将钝化保护层21远离衬底基板10的一侧形成有多个间隔设置的内切部210，可在后续形成空穴注入层时起到隔断作用，即：将形成的空穴注入层隔断成多个间隔设置的空穴注入块12，这样设计不需要增加额外的工艺步骤来制备，制备流程简单。
阳极层可包括多个间隔设置的阳极11，每一阳极11对应形成在内切部210的第二面上。其中，每个阳极11对应的区域可理解为一亚像素区。举例而言，在衬底基板10为硅基板时，该阳极11可与硅基板中的源、漏电极电连接。本实施例中，阳极层可为经过图案化处理之后形成。
有机发光功能层具有空穴注入层，此空穴注入层包括多个间隔设置的空穴注入块12，每一空穴注入块12对应形成在一阳极11上。由于本实施例中各阳极11上的空穴注入块12间隔设置(即：相互独立)，相比于相关技术中空穴注入层为整层设置的共同层(即：空穴注入层未经图案化处理且为一体连接)的方案，即使空穴注入层具有低电阻率，也可避免亚像素之间导通的情况，从而可改善亚像素之间发生串扰的问题，继而可提高显示效果。
应当理解的是，该有机发光功能层不仅具有空穴注入层，还具有空穴传输层13、有机发光层14、电子传输层15及电子注入层16，其中，空穴传输层13、有机发光层14、电子传输层15及电子注入层16均可采用蒸镀等工艺整面形成，以减少对具有像素图形的光罩的使用，从而可降低成本；但不限于此，空穴传输层13、有机发光层14、电子传输层15及电子注入层16的具体结构可根据具体需求而定。
需要说明的是，本申请中提到的整面形成(整面设置)指的是未经图案化处理且为一体连接的结构。
其中，在本实施例的有机电致发光结构为硅基OELD时，该有机发光功能层中的有机发光层14可为整面形成，此时，该有机发光层14的材料可优选为出射白光的材料，且该有机电致发光结构需与彩膜基板23相匹配以共同形成显示设备。
阴极层17形成在有机发光功能层背离阳极层的一侧。举例而言，阴极层17可为整层设置，即：未经图案化处理，但不限于此，该阴极层17的具体结构可根据具体需求而定。举例而言，此阴极层的材料可为半透明材料，但不限于此，也可为透明材料，视具体情况而定。
下面结合附图对本申请实施例所描述的有机电致发光结构进行详细描述。
如图1所示，本实施例中钝化保护层21中内切部210的纵截面可为倒梯形，此纵截面可为与衬底基板10垂直的面；即：自第一面至第二面的方向上，内切部210的横截面面积逐渐增大，便于制作成型；此横截面为与衬底基板10垂直的面，但不限于此，内切部210的纵截面也可为T型，视具体情况而定。可选地，内切部210中第一面在衬底基板10上的正投影位于第二面在衬底基板10上的正投影的中心区域，以使得内切部210各处有足够的内切量，从而保证在后续形成空穴注入层时，能够隔断处多个相互独立的空穴注入块12，优选地，第一面的边缘与第二面的边缘之间各处距离可均相等。
其中，该钝化保护层21可为单层或多层结构，此钝化保护层21的材料可为无机材料，例如，氧化硅等，限不限于此，也可为其他无机绝缘材料。
需要说明的是，本实例中内切部210的厚度大于空穴注入层的厚度，以保证在后续形成空穴注入层时，能够隔断处多个相互独立的空穴注入块12。可选地，该内切部210的厚度为
Figure PCTCN2021070358-appb-000003
至
Figure PCTCN2021070358-appb-000004
比如：
Figure PCTCN2021070358-appb-000005
Figure PCTCN2021070358-appb-000006
等，这样设计可避免内切部的厚度过小而导致无法隔断空穴注入层的情况，还可避免内切部的厚度过大导致钝化保护层21结构稳定性较弱的情况，即：在保证内切部的存在能够起到隔断空穴注入层的目的的同时，还可保证整个钝化保护层21的结构稳定性及钝化保护层21的保护作用。
阳极11的纵截面可为正梯形，但不限于此，也可为其他形状。其中，阳极11可为透明电极。举例而言，此阳极11的材料可能包含锌(Zn)、铟(In)或锡(Sn)。特别地，阳极11可能由锌(Zn)、铟(In)或锡(Sn)的氧化物形成，如氧化铟锡(ITO)、氧化锌(ZnO)、氧化铟(In2O3)、氧化锡(SnO2)等。尤其地，阳极11的材料可能由氧化铟锡(ITO)组成。此外，本实施例中阳极11的厚度可为
Figure PCTCN2021070358-appb-000007
(埃米)至
Figure PCTCN2021070358-appb-000008
比如：
Figure PCTCN2021070358-appb-000009
等，以在保证良好导电性的同时，具有良好的透明性，但不限于此，该阳极11的厚度也可在其他取值范围内，视具体情况而定。
本实施例中，该有机电致发光结构可为顶发射，为了保证有机电致发光结构的发光亮度，如图2至图4所示，可在阳极11朝向衬底基板10的一侧形成金属复合层，该金属复合层可具有多个间隔设置的金属复合部，每一金属复合部与一阳极连接；该金属复合部可对有机发光层14中发出的光进行反射，以提高显示亮度。
详细说明，此金属复合部可包括依次层叠设置在衬底基板10上的金属保护膜18、金属反射膜19及第一导电连接块20；其中，金属反射膜19位于钝化保护层21远离阳极11的一侧，第一导电连接块20穿过钝化保护层21与阳极11连接，也就是说，钝化保护层21用于覆盖金属复合层，以对金属复合层起到，以避免金属复合层被氧化、腐蚀。需要说明的是，此第一导电连接块20可与阳极11连接，在衬底基板10为硅基板时，该金属保护膜18可与硅基板中的源、漏电极连接，也就是说，阳极11可通过此金属复合部与硅基板中的源、漏电极连接。
可选地，金属反射膜19在衬底基板10上的正投影可位于金属保护膜18在衬底基板10上的正投影内，或与金属保护膜18在衬底基板10上的正投影完全重合。而第一导电连接块20在衬底基板10上的正投影可位于阳极11的第一面在衬底基板10上的正投影内。
进一步地，该有机电致发光结构还可包括驱动电路，此驱动电路设置在金属复合层靠近衬底基板的一侧，其中，该驱动电路可包括晶体管，但不限于此，还可包括电容及信号线等。此晶体管与金属复合层通过第二导电连接块连接，具体与金属复合层中的金属保护膜18连接。本实施例中，晶体管可具有半导体层27，此半导体层27位于衬底基板10的内部，即：在衬底基板10为硅基板时，半导体层27可属于硅基板的部分。应当理解的是，晶体管还可具有源电极25、漏电极26、栅极28及栅绝缘层29，需要说明的是，此源电极25、漏电极26也可形成硅基板的内部，具体地，可通过掺杂工艺对硅基板中的部分结构进行处理，以形成晶体管的半导体层27、源电极25、漏电极26。举例而言，第一导电连接块20、第二导电连接块24的材料可为金属钨，但不限于此，也可采用其他导电材料。金属反射膜19可由反射率较高的金属材料组成，如铝，但不限于此，也可采用其他金属材料。金属保护膜18可单层或多层结构，该金属保护膜18的材料可为钛或氮化钛中的一种，可选地，该金属保护膜18可为氮化钛，该氮化钛具有高稳定性，常温下不与其他金属发生反应，因此，将金属反射膜19的一侧形成氮化钛，以用来保护金属反射膜19，防止金属反射膜19被氧化、腐蚀；另外，在金属反射膜19为铝时，由于氮化钛的化学性质与铝的化学性质相关很多，不会存在相似相溶问题，且氮化钛具有超高的抗热性，从而在铝层的一侧直接形成氮化钛层，不会降低铝层的导电性能，进而起到对铝层的保护作用。
由于氮化钛电阻率较高，因此，在氮化钛作为金属保护层时，氮化钛的厚度不易过厚。
值得说明的是，如图3和图4所示，该有机电致发光结构还可包括封装薄膜22，此封装薄膜22可形成在阴极层17背离所述衬底基板10的一侧，用于对有机电致发光结构中的有机发光功能层进行保护。其中， 该封装薄膜22可为单层或多层结构，可选地，此封装薄膜22可包括至少一层有机封装层和至少一层无机封装层，此有机封装层与无机封装层可交替设置。
本申请另一实施例还提供了一种有机电致发光结构的制作方法，如图5所示，该制作方法可包括：
步骤S300，形成一衬底基板10；
步骤S302，在衬底基板10的一侧形成钝化保护层21及阳极层；钝化保护层21远离衬底基板10的一侧形成有多个间隔设置的内切部210，内切部210具有朝向衬底基板10的第一面及远离衬底基板10的第二面，第一面在衬底基板10上的正投影位于第二面在衬底基板10上的正投影内，且第一面的边缘与第二面的边缘之间具有非零间距；阳极层包括多个间隔设置的阳极11，每一阳极11对应形成在内切部210的第二面上，如图6所示；
步骤S304，在衬底基板10上形成具有空穴注入层的有机发光功能层，空穴注入层包括多个间隔设置的空穴注入块12，每一空穴注入块12对应形成在一阳极11上；
步骤S306，在有机发光功能层背离阳极层的一侧形成阴极层17。
应当理解的是，此制作方法制作出的有机电致发光结构的结构及材料选取具体可参考前述实施例中对有机电致发光结构的描述内容，因此，本实施例不再对有机电致发光结构的具体结构、材料选取及有益效果进行详细赘述。
其中，在步骤S300中，形成一衬底基板10，由于衬底基板10的制备较成熟，因此，在此不做详细说明。
可选地，步骤S302可包括步骤S3020和步骤S3022；其中：
在步骤S3020中，在衬底基板10上依次形成钝化保护材料和阳极材料；举例而言，此钝化保护材料和阳极材料可通过磁控溅射、蒸镀等方式形成在衬底基板10上。需要说明的是，钝化保护材料和阳极材料依次整面涂覆在衬底基板上，此处提到的整面涂覆即指在衬底基板10的整个面上均涂覆有此钝化保护材料和阳极材料。
在步骤S3022中，对阳极材料、钝化保护材料远离衬底基板10的一 侧依次进行图案化处理，以形成阳极层和具有多个间隔设置的内切部210的钝化保护层21。具体地，该步骤S3022可包括：步骤S30220和步骤S30222；其中：
在步骤S30220中，采用第一干刻工艺对阳极材料进行图案化处理，以形成阳极层。此第一干刻工艺可以各项同性为主，但不限于此。
在步骤S30222中，采用以各项同性为主的第二干刻工艺对钝化保护材料远离衬底基板10的一侧进行图案化处理，以形成多个间隔设置的内切部。举例而言，在采用第一干刻工艺对阳极材料进行图案化处理之后，可通过控制偏压功率使刻蚀以各项同性为主，然后对钝化保护材料远离衬底基板10的一侧进行图案化处理。
其中，在对阳极材料进行干刻工艺处理之前，还可包括光刻工艺；在对钝化保护材料进行干刻工艺处理之后，还可包括去胶(此胶可为光刻胶)工艺，由于光刻工艺和去胶工艺为比较成熟工艺，因此，不在此处进行详细说明。
需要说明的是，在步骤S300之后，及在步骤S302之前，还可包括步骤S301，形成驱动电路、金属复合层。该驱动电路、金属复合层的结构及位置关系可参考前述对有机电致发光结构描述，在此不再重复赘述。
可选地，步骤S304可包括：
步骤S3040，采用蒸镀工艺将空穴注入材料蒸镀在形成有内切部210的衬底基板10上，以形成包括多个间隔设置的空穴注入块12的空穴注入层，如图7所示；需要说明的是，此空穴注入块12包裹住阳极11，这样设计提高了空穴注入块12与阳极11的接触面积，从而可提高载流子注入，提高显示效果。
此外，该空穴注入层还可包括形成在衬底基板10上并位于相邻阳极11之间的空穴注入废料30，此空穴注入废料30与空穴注入块12隔断开。需要说明的是，由于空穴注入废料30与空穴注入块12已经在内切部210的作用下断开，因此不需要去除空穴注入废料30，这样降低可制作难度。
其中，该步骤S304不限于上述步骤S3040，在步骤S3040之后，该 步骤S304还可包括步骤S3042，即：依次形成空穴传输层13、有机发光层14、电子传输层15及电子注入层16。其中，空穴传输层13、有机发光层14、电子传输层15及电子注入层16可采用蒸镀工艺形成，但不限于此，也可采用其他形式。
在步骤S306之后，有机电致发光结构的制作方法还可包括步骤S308，即：在阴极层17背离衬底基板10的一侧形成封装薄膜22。
本申请又一实施例还提供了一种显示装置，如图4所示，包括上述任一项所描述的有机电致发光结构。但不限于此，在有机电致发光结构中的有机发光层14为整面设置、且出射白光时，此显示装置还可包括彩膜基板23，该彩膜基板23可形成在有机电致发光结构的出光侧。
根据本申请的实施例，该显示装置的具体类型不受特别的限制，本领域常用的显示装置类型均可，具体例如OLED显示器、手机、电视、手表等等，本领域技术人员可根据该显示设备的具体用途进行相应地选择，在此不再赘述。
需要说明的是，该显示装置除了有机电致发光结构以外，还包括其他必要的部件和组成，以显示器为例，具体例如外壳、电源线，等等，本领域善解人意可根据该显示装置的具体使用要求进行相应地补充，在此不再赘述。
需要说明的是，尽管在附图中以特定顺序描述了本申请中方法的各个步骤，但是，这并非要求或者暗示必须按照该特定顺序来执行这些步骤，或是必须执行全部所示的步骤才能实现期望的结果。附加的或备选的，可以省略某些步骤，将多个步骤合并为一个步骤执行，以及/或者将一个步骤分解为多个步骤执行等，均应视为本申请的一部分。
应可理解的是，本申请不将其应用限制到本说明书提出的部件的详细结构和布置方式。本申请能够具有其他实施方式，并且能够以多种方式实现并且执行。前述变形形式和修改形式落在本申请的范围内。应可理解的是，本说明书公开和限定的本申请延伸到文中和/或附图中提到或明显的两个或两个以上单独特征的所有可替代组合。所有这些不同的组合构成本申请的多个可替代方面。本说明书的实施方式说明了已知用于实现本申请的最佳方式，并且将使本领域技术人员能够利用本申请。

Claims (13)

  1. 一种有机电致发光结构，其中，包括：
    衬底基板；
    钝化保护层，形成在所述衬底基板的一侧；所述钝化保护层远离所述衬底基板的一侧形成有多个间隔设置的内切部，所述内切部具有朝向所述衬底基板的第一面及远离所述衬底基板的第二面，所述第一面在所述衬底基板上的正投影位于所述第二面在所述衬底基板上的正投影内，且所述第一面的边缘与所述第二面的边缘之间具有非零间距；
    阳极层，包括多个间隔设置的阳极，每一所述阳极对应形成在所述第二面上；
    有机发光功能层，具有空穴注入层，所述空穴注入层包括多个间隔设置的空穴注入块，每一所述空穴注入块对应形成在一所述阳极上；
    阴极层，形成在所述有机发光功能层背离所述阳极层的一侧。
  2. 根据权利要求1所述的有机电致发光结构，其中，
    自所述第一面至所述第二面的方向上，所述内切部的横截面面积逐渐增大，所述横截面为与所述衬底基板平行的面。
  3. 根据权利要求2所述的有机电致发光结构，其中，
    所述第一面在所述衬底基板上的正投影位于所述第二面在所述衬底基板上的正投影的中心区域。
  4. 根据权利要求1所述的有机电致发光结构，其中，
    所述内切部的厚度大于所述空穴注入层的厚度。
  5. 根据权利要求4所述的有机电致发光结构，其中，
    所述内切部的厚度为
    Figure PCTCN2021070358-appb-100001
    至
    Figure PCTCN2021070358-appb-100002
  6. 根据权利要求1所述的有机电致发光结构，其中，所述阳极为透明电极。
  7. 根据权利要求5所述的有机电致发光结构，其中，还包括金属复合层，具有多个间隔设置的金属复合部，每一所述金属复合部与一所述阳极连接；
    所述金属复合部包括依次层叠设置在所述衬底基板上的金属保护膜、金属反射膜及第一导电连接块，所述金属反射膜位于所述内切部远离所 述阳极的一侧，所述第一导电连接块穿过所述内切部与所述阳极连接。
  8. 根据权利要求7所述的有机电致发光结构，其中，还包括驱动电路，设置在所述金属复合层靠近所述衬底基板的一侧，其中，
    所述驱动电路包括晶体管，所述晶体管与所述金属复合层通过第二第一导电连接块连接，所述晶体管具有半导体层，所述半导体层位于所述衬底基板的内部。
  9. 一种有机电致发光结构的制作方法，其中，包括：
    形成一衬底基板；
    在所述衬底基板的一侧形成钝化保护层及阳极层；所述钝化保护层远离所述衬底基板的一侧形成有多个间隔设置的内切部，所述内切部具有朝向所述衬底基板的第一面及远离所述衬底基板的第二面，所述第一面在所述衬底基板上的正投影位于所述第二面在所述衬底基板上的正投影内，且所述第一面的边缘与所述第二面的边缘之间具有非零间距；所述阳极层包括多个间隔设置的阳极，每一所述阳极对应形成在所述第二面上；
    在所述衬底基板上形成具有空穴注入层的有机发光功能层，所述空穴注入层包括多个间隔设置的空穴注入块，每一所述空穴注入块对应形成在一所述阳极上；
    在所述有机发光功能层背离所述阳极层的一侧形成阴极层。
  10. 根据权利要求9所述的制作方法，其中，在所述衬底基板的一侧形成钝化保护层及阳极层，包括：
    在所述衬底基板上依次形成钝化保护材料和阳极材料；
    对所述阳极材料、所述钝化保护材料远离所述衬底基板的一侧依次进行图案化处理，以形成所述阳极层和具有多个间隔设置的内切部的钝化保护层。
  11. 根据权利要求10所述的制作方法，其中，对所述阳极材料、所述钝化保护材料远离所述衬底基板的一侧依次进行图案化处理，以形成所述阳极层和具有多个间隔设置的内切部的钝化保护层，包括：
    采用第一干刻工艺对所述阳极材料进行图案化处理，以形成所述阳极层；
    采用以各项同性为主的第二干刻工艺对所述钝化保护材料远离所述衬底基板的一侧进行图案化处理，以形成多个间隔设置的内切部。
  12. 根据权利要求9所述的制作方法，其中，在所述衬底基板上形成具有空穴注入层的有机发光功能层，包括：
    采用蒸镀工艺将空穴注入材料蒸镀在形成有所述内切部的衬底基板上，以形成包括多个间隔设置的空穴注入块的空穴注入层。
  13. 一种显示装置，其中，包括权利要求1至8中任一项所述的有机电致发光结构。
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