WO2021114421A1 - 显示面板及其制作方法 - Google Patents

显示面板及其制作方法 Download PDF

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Publication number
WO2021114421A1
WO2021114421A1 PCT/CN2019/129150 CN2019129150W WO2021114421A1 WO 2021114421 A1 WO2021114421 A1 WO 2021114421A1 CN 2019129150 W CN2019129150 W CN 2019129150W WO 2021114421 A1 WO2021114421 A1 WO 2021114421A1
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Prior art keywords
layer
auxiliary electrode
sublayer
pixel
organic
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PCT/CN2019/129150
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English (en)
French (fr)
Inventor
谭伟
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深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US16/627,772 priority Critical patent/US11063235B2/en
Publication of WO2021114421A1 publication Critical patent/WO2021114421A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • This application relates to the technical field of display panels, and in particular to a display panel and a manufacturing method thereof.
  • OLED Organic Light Emitting Display
  • Existing OLED display panels usually include: a TFT substrate, an anode provided on the TFT substrate, an organic light-emitting layer provided on the anode, and a cathode provided on the organic light-emitting layer, and common cathodes such as top-emitting OLED display panels generally Use high transmittance metal or transparent oxide (Transparent Conductive Oxide, TCO); this kind of high transmittance metal cathode will have the problem of high surface resistance, especially for the common cathode surface resistance of large-size printed OLED display panels High will cause severe power supply voltage drop (IR-drop), resulting in poor in-plane brightness uniformity.
  • TCO Transparent Conductive Oxide
  • the embodiments of the present application provide a display panel and a manufacturing method thereof, which are used to solve the technical problem of high common cathode surface resistance of the existing large-size OLED display panel, severe power supply voltage drop, and poor in-plane brightness uniformity.
  • An embodiment of the present application provides a display panel, including:
  • a pixel definition layer is arranged on the substrate, and a plurality of pixel openings are opened on the pixel definition layer;
  • the auxiliary electrode layer is disposed adjacent to each of the pixel openings and is disposed on the pixel defining layer.
  • the auxiliary electrode layer includes a first auxiliary electrode sublayer disposed on the pixel defining layer, and a first auxiliary electrode sublayer disposed on the pixel defining layer.
  • a second auxiliary electrode sublayer on an auxiliary electrode sublayer, the first auxiliary electrode sublayer is provided with a groove near the pixel opening;
  • the electron transport layer is arranged on the pixel definition layer and the auxiliary electrode layer;
  • the cathode layer is arranged on the electron transport layer
  • the organic layer is arranged on the cathode layer.
  • the metal layer corresponds to the position of the groove portion and is arranged between the second auxiliary electrode sublayer and the cathode layer.
  • the thickness of the first auxiliary electrode sublayer is greater than the sum of the thicknesses of the electron transport layer, the cathode layer, and the organic layer.
  • an opening communicating with the groove portion is provided between the second auxiliary electrode sublayer and the organic layer, and the metal layer is provided at the opening, and It is connected to the second auxiliary electrode sublayer and the cathode layer.
  • the organic layer includes a first organic sublayer located above the pixel definition layer and a second organic sublayer disposed on the auxiliary electrode layer, and the first organic sublayer
  • the material of the sub-layer and the second organic sub-layer are the same, and the opening is opened between the first organic sub-layer and the second auxiliary electrode sub-layer.
  • the material of the first auxiliary electrode sublayer is aluminum or silver, and the material of the second auxiliary electrode sublayer is transparent oxide.
  • the material of the organic layer is a conductive pattern material
  • the material of the metal layer is a conductive electrode material
  • the display panel of the embodiment of the present application it further includes an anode layer disposed on the substrate and corresponding to the position of the pixel opening, and an organic light emitting layer disposed in the pixel opening and located on the anode layer ,
  • the electron transport layer is disposed on the organic light-emitting layer, the pixel definition layer and the auxiliary electrode layer.
  • a manufacturing method of a display panel including the following steps:
  • auxiliary electrode layer adjacent to each of the pixel openings is formed on the pixel defining layer;
  • the auxiliary electrode layer includes a first auxiliary electrode sublayer formed on the pixel defining layer, and a first auxiliary electrode sublayer formed on the pixel defining layer;
  • a second auxiliary electrode sublayer on the auxiliary electrode sublayer, the first auxiliary electrode sublayer forms a groove near the pixel opening;
  • An organic layer is formed on the cathode layer, and then a metal layer corresponding to the position of the groove portion is formed between the second auxiliary electrode sublayer and the cathode layer.
  • the auxiliary electrode layer adjacent to each pixel opening is formed on the pixel definition layer;
  • the auxiliary electrode layer includes an auxiliary electrode layer formed on the pixel definition layer
  • the first auxiliary electrode sub-layer and the second auxiliary electrode sub-layer formed on the first auxiliary electrode sub-layer, the first auxiliary electrode sub-layer forming a groove near the pixel opening includes:
  • first auxiliary electrode sublayer Forming a first auxiliary electrode sublayer on the pixel defining layer, and the thickness of the first auxiliary electrode sublayer is greater than the sum of the thicknesses of the electron transport layer, the cathode layer, and the organic layer;
  • a groove portion is formed at the first auxiliary electrode sublayer close to the pixel opening.
  • the organic layer is formed on the cathode layer, and then formed between the second auxiliary electrode sublayer and the cathode layer to be at a position corresponding to the recessed portion.
  • the corresponding metal layer includes:
  • a metal layer is formed at the opening between the second auxiliary electrode sublayer and the cathode layer by using a conductive electrode material mutually repelling the conductive pattern material of the organic layer.
  • the organic layer and the metal layer are both manufactured by evaporation.
  • the evaporation temperature of the organic layer is 150-250°C.
  • the vapor deposition temperature of the metal layer is 500-650°C.
  • An embodiment of the present application provides a display panel and a manufacturing method thereof.
  • An auxiliary electrode layer is provided on the pixel definition layer, and the second auxiliary electrode sublayer in the auxiliary electrode layer is electrically connected to the cathode layer by providing a metal layer. Connection, thereby reducing the resistance of the cathode layer, reducing the power supply voltage drop of the display panel, and ensuring the brightness uniformity in the display panel; in addition, the overall manufacturing method of the display panel structure is simple and efficient, suitable for large Mass production.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of a display panel provided by an embodiment of the application
  • FIG. 2 is a schematic diagram of the structure of an auxiliary electrode layer and pixel openings in a display panel provided by an embodiment of the application;
  • FIG. 3 is a schematic block diagram of a process flow of a manufacturing method of a display panel provided by an embodiment of the application.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present application, “multiple” means two or more than two, unless otherwise specifically defined.
  • connection should be understood in a broad sense, unless otherwise clearly specified and limited.
  • it can be a fixed connection or a detachable connection.
  • Connected or integrally connected it can be mechanically connected, or electrically connected or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relationship.
  • connection should be understood according to specific circumstances.
  • the "on" or “under” of the first feature of the second feature may include direct contact between the first and second features, or may include the first and second features Not in direct contact but through other features between them.
  • the "above”, “above” and “above” of the first feature on the second feature include the first feature directly above and obliquely above the second feature, or it simply means that the first feature is higher in level than the second feature.
  • the “below”, “below” and “below” of the second feature of the first feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • An embodiment of the present application provides a display panel, including:
  • the pixel definition layer 200 is disposed on the substrate 100, and a plurality of pixel openings 210 are opened on the pixel definition layer 200;
  • the auxiliary electrode layer 300 is disposed adjacent to each of the pixel openings 210 and is disposed on the pixel defining layer 200.
  • the auxiliary electrode layer 300 includes a first auxiliary electrode sublayer 310 disposed on the pixel defining layer 200, And a second auxiliary electrode sublayer 320 disposed on the first auxiliary electrode sublayer 310, the first auxiliary electrode sublayer 310 is provided with a groove portion 311 near the pixel opening 210;
  • the electron transport layer 400 is disposed on the pixel defining layer 200 and the auxiliary electrode layer 300;
  • the cathode layer 500 is disposed on the electron transport layer 400;
  • the organic layer 600 is disposed on the cathode layer 500.
  • the metal layer 700 corresponds to the position of the groove portion 311 and is disposed between the second auxiliary electrode sublayer 320 and the cathode layer 500.
  • an auxiliary electrode layer 300 is provided on the pixel defining layer 200, and the auxiliary electrode layer 300 is connected to the cathode layer 500 to reduce the resistance of the cathode layer 500, thereby ensuring The brightness uniformity within the display panel; specifically, the second auxiliary electrode sublayer 320 on the auxiliary electrode layer 300 is connected to the cathode layer 500 through the metal layer 700, so as to reduce the resistance of the cathode layer 500 Purpose; and by providing a groove portion 311 in the first auxiliary electrode sublayer 310 close to the pixel opening 210, the gap between the first auxiliary electrode sublayer 310 and the electron transport layer 400 can also be further enlarged The distance between the first auxiliary electrode sublayer 310 and the electron
  • the thickness of the first auxiliary electrode sublayer 310 is greater than the sum of the thicknesses of the electron transport layer 400, the cathode layer 500, and the organic layer 600; obviously, when the first auxiliary electrode sublayer When the thickness of 310 is greater than the sum of the thicknesses of the electron transport layer 400, the cathode layer 500, and the organic layer 600, the second auxiliary electrode sublayer 320 is located at a level higher than that of the organic layer 600 to avoid The second auxiliary electrode sub-layer 320 is in direct contact with the organic layer 600, resulting in the sealing of the groove portion 311 without a space for the metal layer 700.
  • an opening communicating with the groove portion 311 is provided between the second auxiliary electrode sublayer 320 and the organic layer 600, and the metal layer 700 is disposed at the opening and is respectively It is connected to the second auxiliary electrode sublayer 320 and the cathode layer 500; it is understandable that the opening can be realized by etching or other manufacturing methods, or by making the second auxiliary electrode
  • the sub-layer 320 and the metal layer 700 are realized by having a structure with a certain height difference.
  • the organic layer 600 includes a first organic sublayer 610 located above the pixel defining layer 200 and a second organic sublayer 620 disposed on the auxiliary electrode layer 300, and the first organic sublayer 610 and the second organic sub-layer 620 are made of the same material, and the opening is opened between the first organic sub-layer 610 and the second auxiliary electrode sub-layer 320; it can be understood that because the auxiliary electrode The existence of the layer 300, and the thickness of the organic layer 600 is much smaller than the thickness of the auxiliary electrode layer 300, so that in the process of forming the organic layer 600, the organic layer 600 is segmented into the pixels.
  • the material of the organic layer 600 is a conductive pattern material (the ConducTorr Patterning Material, CPM), the material of the metal layer 700 is a conductor electrode material (the ConducTorr Electrode Material, CEM), the conductor pattern material and the conductor electrode material repel each other.
  • the conductive pattern material is a low-temperature organic material
  • the conductive electrode material is a metal
  • the conductive pattern material and the conductive electrode material in this embodiment are all from the company OTI Lumionics.
  • the organic layer 600 can be deposited first, and then the metal layer 700 can be deposited. Since the two repel each other, the metal The layer 700 has a self-assembly process, and the metal layer 700 is only deposited on the area that does not cover the organic layer 600, that is, the metal layer 700 is patterned in the negative pattern of the organic layer 600.
  • the vapor deposition temperature of the organic layer 600 is 150-250°C, and the vapor deposition temperature of the metal layer 700 is 500-650°C.
  • it further includes an anode layer 800 disposed on the substrate 100 and corresponding to the position of the pixel opening 210, and an organic light emitting layer disposed in the pixel opening 210 and located on the anode layer 800.
  • the electron transport layer 400 is disposed on the organic light-emitting layer 900, the pixel defining layer 200 and the auxiliary electrode layer 300.
  • the pixel defining layer 200 is disposed on the substrate 100 and partially covers For the anode layer 800, it can be understood that the portion of the anode layer 800 that is not covered by the pixel defining layer 200 corresponds to the pixel opening 210.
  • a method for manufacturing a display panel is also provided, as shown in FIG. 3, including the following steps:
  • Step S10 as shown in FIG. 4, a substrate 100 is provided, a pixel definition layer 200 is formed on the substrate 100, and a plurality of pixel openings 210 are formed on the pixel definition layer 200;
  • Step S20 as shown in FIGS. 5-6, an auxiliary electrode layer 300 adjacent to each of the pixel openings 210 is formed on the pixel defining layer 200;
  • the auxiliary electrode layer 300 includes forming on the pixel defining layer A first auxiliary electrode sublayer 310 on 200 and a second auxiliary electrode sublayer 320 formed on the first auxiliary electrode sublayer 310, the first auxiliary electrode sublayer 310 is formed close to the pixel opening 210 Groove portion 311;
  • Step S30 as shown in FIG. 7, an electron transport layer 400 and a cathode layer 500 are sequentially formed on the pixel definition layer 200 and the auxiliary electrode layer 300;
  • Step S40 as shown in FIG. 8, an organic layer 600 is formed on the cathode layer 500, and then an organic layer 600 is formed between the second auxiliary electrode sublayer 320 and the cathode layer 500 in a position corresponding to the recessed portion 311.
  • the corresponding metal layer 700 is formed on the cathode layer 500, and then an organic layer 600 is formed between the second auxiliary electrode sublayer 320 and the cathode layer 500 in a position corresponding to the recessed portion 311.
  • an auxiliary electrode layer 300 adjacent to each pixel opening 210 is formed on the pixel definition layer 200; the auxiliary electrode layer 300 includes an auxiliary electrode layer 300 formed on the pixel definition layer 200; The first auxiliary electrode sublayer 310 on the layer 200 and the second auxiliary electrode sublayer 320 formed on the first auxiliary electrode sublayer 310, the first auxiliary electrode sublayer 310 is close to the pixel opening 210
  • Forming the groove portion 311 includes:
  • the material of the first auxiliary electrode sublayer 310 is different from the material of the second auxiliary electrode sublayer 320.
  • the material of the first auxiliary electrode sublayer 310 is aluminum or silver.
  • the material of the second auxiliary electrode sub-layer 320 is a transparent oxide. Through the difference between the first auxiliary electrode sub-layer 310 and the second auxiliary electrode sub-layer 320, only the first auxiliary electrode can be used.
  • the sub-layer 310 is etched without etching the second auxiliary electrode sub-layer 320, and the first auxiliary electrode sub-layer 310 is etched to form a groove portion 311.
  • the organic layer 600 is formed on the cathode layer 500, and then the organic layer 600 is formed between the second auxiliary electrode sublayer 320 and the cathode layer 500.
  • the metal layer 700 corresponding to the position of the groove portion 311 includes:
  • Step S41 forming an organic layer 600 on the cathode layer 500, and the material of the organic layer 600 is a conductive pattern material;
  • a metal layer 700 is formed at the opening between the second auxiliary electrode sublayer 320 and the cathode layer 500 by using a conductive electrode material mutually repelling the conductive pattern material of the organic layer 600.
  • the material of the organic layer 600 is a conductive pattern material (the ConducTorr Patterning Material, CPM)
  • the material of the metal layer 700 is a conductor electrode material (the ConducTorr Electrode Material, CEM)
  • the conductor pattern material and the conductor electrode material repel each other. It can be understood that because the conductor pattern material and the conductor electrode material have mutually repelling properties, in actual production,
  • the organic layer 600 is deposited first, and then the metal layer 700 is deposited. Since the two repel each other, the metal layer 700 has a self-assembly process.
  • the metal layer 700 is only deposited on the uncovered organic layer 600.
  • the metal layer 700 is patterned in the negative pattern of the organic layer 600; specifically, the metal layer 700 will be formed in a place without the organic layer 600, that is, the opening in this application
  • the location; the vapor deposition temperature of the organic layer 600 is 150-250 °C, the vapor deposition temperature of the metal layer 700 is 500-650 °C.
  • the present application provides an auxiliary electrode layer 300 on the pixel definition layer 200 and a metal layer 700 to electrically connect the second auxiliary electrode sublayer 320 in the auxiliary electrode layer 300 to the cathode layer 500. Therefore, the resistance of the cathode layer 500 is reduced, the power supply voltage drop of the display panel is also reduced, and the brightness uniformity in the display panel is ensured; in addition, the overall manufacturing method of the display panel structure is simple and efficient, and is suitable for mass production. .

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Abstract

一种显示面板及其制作方法,包括基板、像素定义层、辅助电极层、电子传输层、阴极层、有机层和金属层，像素定义层上开设有多个像素开口；辅助电极层包括依次设置于像素定义层上的第一辅助电极子层和第二辅助电极子层，第一辅助电极子层上设有凹槽部；金属层与凹槽部位置相对应，且设置于第二辅助电极子层与阴极层之间。

Description

显示面板及其制作方法 技术领域
本申请涉及显示面板技术领域，尤其涉及一种显示面板及其制作方法。
 背景技术
有机电致发光(Organic Light Emitting Display，OLED)器件因其具有自发光、全固态、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全彩显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
 技术问题
现有的OLED显示面板通常包括：TFT基板，设于TFT基板上的阳极、设于阳极上的有机发光层，及设于有机发光层上的阴极，而诸如顶发光OLED显示面板的共阴极一般采用透过率高的金属或者透明氧化物（Transparent Conductive Oxide，TCO）；此种透过率高的金属阴极会存在面电阻高的问题，特别是对于大尺寸打印OLED显示面板的共阴极面电阻高会导致严重的电源电压降(IR-drop)，使得面内亮度均一性差。
 技术解决方案
本申请实施例提供一种显示面板及其制作方法，用于解决现有大尺寸OLED显示面板共阴极面电阻高，会存在严重的电源电压降，导致面内亮度均一性差的技术问题。
本申请实施例提供一种显示面板，包括：
基板；
像素定义层，设置于所述基板上，所述像素定义层上开设有多个像素开口；
辅助电极层，邻设于各所述像素开口并设置于所述像素定义层上，所述辅助电极层包括设置于所述像素定义层上的第一辅助电极子层、以及设置于所述第一辅助电极子层上的第二辅助电极子层，所述第一辅助电极子层靠近所述像素开口处设有凹槽部；
电子传输层，设置于所述像素定义层和所述辅助电极层上；
阴极层，设置于所述电子传输层上；
有机层，设置于所述阴极层上；及
金属层，与所述凹槽部位置相对应，且设置于所述第二辅助电极子层与所述阴极层之间。
在本申请实施例的显示面板中，所述第一辅助电极子层的厚度大于所述电子传输层、阴极层和所述有机层的厚度之和。
在本申请实施例的显示面板中，所述第二辅助电极子层与所述有机层之间设有与所述凹槽部连通的开口，所述金属层设置于所述开口处，并分别与所述第二辅助电极子层和所述阴极层相连。
在本申请实施例的显示面板中，所述有机层包括位于所述像素定义层上方的第一有机子层和设置于所述辅助电极层上的第二有机子层，且所述第一有机子层和所述第二有机子层的材料相同，所述开口开设于所述第一有机子层与所述第二辅助电极子层之间。
在本申请实施例的显示面板中，所述第一辅助电极子层的材料为铝或银，所述第二辅助电极子层的材料为透明氧化物。
在本申请实施例的显示面板中，所述有机层的材料为导体图形材料，所述金属层的材料为导体电极材料，所述导体图形材料与所述导体电极材料互相排斥。
在本申请实施例的显示面板中，还包括设置于所述基板上且与所述像素开口位置相对应的阳极层、以及设置于所述像素开口内且位于所述阳极层上的有机发光层，所述电子传输层设置于所述有机发光层、像素定义层和所述辅助电极层上。
根据本申请的上述目的，还提供一种显示面板的制作方法，包括以下步骤：
提供一基板，在所述基板上形成像素定义层，所述像素定义层上形成有多个像素开口；
在所述像素定义层上形成邻设于各所述像素开口的辅助电极层；所述辅助电极层包括形成于所述像素定义层上的第一辅助电极子层、以及形成于所述第一辅助电极子层上的第二辅助电极子层，所述第一辅助电极子层靠近所述像素开口处形成凹槽部；
在所述像素定义层和所述辅助电极层上依次形成电子传输层和阴极层；及
在所述阴极层上形成有机层，然后在所述第二辅助电极子层与所述阴极层之间形成与所述凹槽部位置相对应的金属层。
在本申请实施例显示面板的制作方法中，所述在所述像素定义层上形成邻设于各所述像素开口的辅助电极层；所述辅助电极层包括形成于所述像素定义层上的第一辅助电极子层、以及形成于所述第一辅助电极子层上的第二辅助电极子层，所述第一辅助电极子层靠近所述像素开口处形成凹槽部包括：
在所述像素定义层上形成第一辅助电极子层，且所述第一辅助电极子层的厚度大于所述电子传输层、阴极层和所述有机层的厚度之和；
在所述第一辅助电极子层上形成第二辅助电极子层；
在所述第一辅助电极子层靠近所述像素开口处形成凹槽部。
在本申请实施例显示面板的制作方法中，所述在所述阴极层上形成有机层，然后在所述第二辅助电极子层与所述阴极层之间形成与所述凹槽部位置相对应的金属层，包括：
在所述阴极层上形成有机层，所述有机层的材料为导体图形材料；
采用与所述有机层的导体图形材料相互排斥的导体电极材料在所述第二辅助电极子层与所述阴极层之间的开口处形成金属层。
在本申请实施例显示面板的制作方法中，所述有机层和所述金属层均采用蒸镀的方式制作而成。
在本申请实施例显示面板的制作方法中，所述有机层的蒸镀温度为150~250℃。
在本申请实施例显示面板的制作方法中，所述金属层的蒸镀温度为500~650℃。
 有益效果
本申请实施例提供的一种显示面板及其制作方法，在像素定义层上设置辅助电极层，并通过设置金属层使所述辅助电极层中的第二辅助电极子层与所述阴极层电性连接，从而降低了所述阴极层的电阻，也降低了显示面板的电源电压降，保证了显示面板面内的亮度均一性；此外，该显示面板结构整体的制作方法简单高效，适于大批量生产。
 附图说明
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。
图1为本申请实施例提供的显示面板的剖面结构示意图；
图2为本申请实施例提供的显示面板中辅助电极层与像素开口的结构示意图；
图3为本申请实施例提供的显示面板的制作方法的流程示意框图；及
图4-8为本申请实施例提供的显示面板的制作方法的结构形成流程图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
具体的，请参阅图1至图2，本申请实施例提供一种显示面板，包括：
基板100；
像素定义层200，设置于所述基板100上，所述像素定义层200上开设有多个像素开口210；
辅助电极层300，邻设于各所述像素开口210并设置于所述像素定义层200上，所述辅助电极层300包括设置于所述像素定义层200上的第一辅助电极子层310、以及设置于所述第一辅助电极子层310上的第二辅助电极子层320，所述第一辅助电极子层310靠近所述像素开口210处设有凹槽部311；
电子传输层400，设置于所述像素定义层200和所述辅助电极层300上；
阴极层500，设置于所述电子传输层400上；
有机层600，设置于所述阴极层500上；及
金属层700，与所述凹槽部311位置相对应，且设置于所述第二辅助电极子层320与所述阴极层500之间。
可以理解的是，现有透过率高的金属阴极会存在面电阻高的问题，特别是在大尺寸OLED显示面板中由于共阴极面电阻高，会存在严重的电源电压降，导致显示面板内内亮度均一性较差；本申请通过在所述像素定义层200上设置辅助电极层300，通过使辅助电极层300与所述阴极层500相连，以降低所述阴极层500的电阻，从而保证显示面板面内的亮度均一性；具体的，所述辅助电极层300上的第二辅助电极子层320通过所述金属层700与所述阴极层500连接，实现降低所述阴极层500电阻的目的；而通过在所述第一辅助电极子层310靠近所述像素开口210处设置凹槽部311的方式，也可进一步扩大所述第一辅助电极子层310与所述电子传输层400之间的距离；避免所述第一辅助电极子层310与所述电子传输层400连接影响所述显示面板的显示效果；此外，所述第一辅助电极子层310的材料与所述第二辅助电极子层320的材料不相同，具体的，所述第一辅助电极子层310的材料为铝或银，所述第二辅助电极子层320的材料为透明氧化物。
在一实施例中，所述第一辅助电极子层310的厚度大于所述电子传输层400、阴极层500和所述有机层600的厚度之和；显然，当所述第一辅助电极子层310的厚度大于所述电子传输层400、阴极层500和所述有机层600的厚度之和时，所述第二辅助电极子层320所处的水平面会高于与所述有机层600，避免所述第二辅助电极子层320与所述有机层600直接接触，造成所述凹槽部311的封闭而没有所述金属层700的制作空间。
在一实施例中，所述第二辅助电极子层320与所述有机层600之间设有与所述凹槽部311连通的开口，所述金属层700设置于所述开口处，并分别与所述第二辅助电极子层320和所述阴极层500相连；可以理解的是，所述开口可以通过蚀刻或其它制作方式实现，也可通过如前所述的使所述第二辅助电极子层320与所述金属层700具备一定的高度差的结构来实现。
承上，所述有机层600包括位于所述像素定义层200上方的第一有机子层610和设置于所述辅助电极层300上的第二有机子层620，且所述第一有机子层610和所述第二有机子层620的材料相同，所述开口开设于所述第一有机子层610与所述第二辅助电极子层320之间；可以理解的是，由于所述辅助电极层300的存在，并且所述有机层600的厚度远小于所述辅助电极层300的厚度，使得在形成所述有机层600的过程中，使得所述有机层600分段为形成于所述像素定义层200上方的第一有机子层610和形成于所述辅助电极层300上的第二有机子层620；进一步的，在制作所述电子传输层400和所述阴极层500也会造成前述分段现象，在此不再赘述。
在一实施例中，所述有机层600的材料为导体图形材料（the ConducTorr Patterning Material，CPM），所述金属层700的材料为导体电极材料（the ConducTorr Electrode Material,CEM），所述导体图形材料与所述导体电极材料互相排斥。具体的，所述导体图形材料是一种低温有机材料，所述导体电极材料是一种金属，本实施例中的所述导体图形材料和所述导体电极材料均来自公司OTI Lumionics。
由于所述导体图形材料与所述导体电极材料具有互相排斥的性质，故在实际生产中，可以先沉积所述有机层600，然后沉积所述金属层700，由于两者互相排斥，所述金属层700存在一个自组装的过程，所述金属层700仅沉积在未覆盖所述有机层600的区域，即所述金属层700在所述有机层600的负图案中完成图案化。所述有机层600的蒸镀温度为150~250℃，所述金属层700的蒸镀温度为500~650℃。
在一实施例中，还包括设置于所述基板100上且与所述像素开口210位置相对应的阳极层800、以及设置于所述像素开口210内且位于所述阳极层800上的有机发光层900，所述电子传输层400设置于所述有机发光层900、像素定义层200和所述辅助电极层300上，具体的，所述像素定义层200设置于所述基板100上并部分覆盖所述阳极层800，可以理解的是，所述阳极层800未被所述像素定义层200覆盖的部分与所述像素开口210相对应。
根据本申请的上述目的，还提供一种显示面板的制作方法，如图3所示，包括以下步骤：
步骤S10，如图4所示，提供一基板100，在所述基板100上形成像素定义层200，所述像素定义层200上形成有多个像素开口210；
步骤S20，如图5-图6所示，在所述像素定义层200上形成邻设于各所述像素开口210的辅助电极层300；所述辅助电极层300包括形成于所述像素定义层200上的第一辅助电极子层310、以及形成于所述第一辅助电极子层310上的第二辅助电极子层320，所述第一辅助电极子层310靠近所述像素开口210处形成凹槽部311；
步骤S30，如图7所示，在所述像素定义层200和所述辅助电极层300上依次形成电子传输层400和阴极层500；
步骤S40，如图8所示，在所述阴极层500上形成有机层600，然后在所述第二辅助电极子层320与所述阴极层500之间形成与所述凹槽部311位置相对应的金属层700。
在一实施例中，在所述步骤S20中，在所述像素定义层200上形成邻设于各所述像素开口210的辅助电极层300；所述辅助电极层300包括形成于所述像素定义层200上的第一辅助电极子层310、以及形成于所述第一辅助电极子层310上的第二辅助电极子层320，所述第一辅助电极子层310靠近所述像素开口210处形成凹槽部311包括：
S21，在所述像素定义层200上形成第一辅助电极子层310，且所述第一辅助电极子层310的厚度大于所述电子传输层400、阴极层500和所述有机层600的厚度之和；
S22，在所述第一辅助电极子层310上形成第二辅助电极子层320；
S23，在所述第一辅助电极子层310靠近所述像素开口210处形成凹槽部311。
在所述，所述第一辅助电极子层310的材料与所述第二辅助电极子层320的材料不相同，具体的，所述第一辅助电极子层310的材料为铝或银，所述第二辅助电极子层320的材料为透明氧化物，通过所述第一辅助电极子层310与所述第二辅助电极子层320之间的差异，可以采用只对所述第一辅助电极子层310蚀刻而不蚀刻所述第二辅助电极子层320的制作方式，在所述第一辅助电极子层310上蚀刻形成凹槽部311。
在一实施例中，在所述步骤S40中，所述在所述阴极层500上形成有机层600，然后在所述第二辅助电极子层320与所述阴极层500之间形成与所述凹槽部311位置相对应的金属层700，包括：
步骤S41，在所述阴极层500上形成有机层600，所述有机层600的材料为导体图形材料；
步骤S42，采用与所述有机层600的导体图形材料相互排斥的导体电极材料在所述第二辅助电极子层320与所述阴极层500之间的开口处形成金属层700。
承上，所述有机层600的材料为导体图形材料（the ConducTorr Patterning Material，CPM），所述金属层700的材料为导体电极材料（the ConducTorr Electrode Material,CEM），所述导体图形材料与所述导体电极材料互相排斥，可以理解的是，由于所述导体图形材料与所述导体电极材料具有互相排斥的性质，故在实际生产中，可以先沉积所述有机层600，然后沉积所述金属层700，由于两者互相排斥，所述金属层700存在一个自组装的过程，所述金属层700仅沉积在未覆盖所述有机层600的区域，即所述金属层700在所述有机层600的负图案中完成图案化；具体的，所述金属层700会形成于没有所述有机层600的地方，即本申请中的所述开口的位置；所述有机层600的蒸镀温度为150~250℃，所述金属层700的蒸镀温度为500~650℃。
综上，本申请通过在像素定义层200上设置辅助电极层300，并通过设置金属层700使所述辅助电极层300中的第二辅助电极子层320与所述阴极层500电性连接，从而降低了所述阴极层500的电阻，也降低了显示面板的电源电压降，保证了显示面板面内的亮度均一性；此外，该显示面板结构整体的制作方法简单高效，适于大批量生产。
可以理解的是，对本领域普通技术人员来说，可以根据本申请的技术方案及其发明构思加以等同替换或改变，而所有这些改变或替换都应属于本申请所附的权利要求的保护范围。

Claims (13)

  1. 一种显示面板，包括：
    基板；
    像素定义层，设置于所述基板上，所述像素定义层上开设有多个像素开口；
    辅助电极层，邻设于各所述像素开口并设置于所述像素定义层上，所述辅助电极层包括设置于所述像素定义层上的第一辅助电极子层、以及设置于所述第一辅助电极子层上的第二辅助电极子层，所述第一辅助电极子层靠近所述像素开口处设有凹槽部；
    电子传输层，设置于所述像素定义层和所述辅助电极层上；
    阴极层，设置于所述电子传输层上；
    有机层，设置于所述阴极层上；及
    金属层，与所述凹槽部位置相对应，且设置于所述第二辅助电极子层与所述阴极层之间。
  2. 如权利要求1所述的显示面板，其中，所述第一辅助电极子层的厚度大于所述电子传输层、阴极层和所述有机层的厚度之和。
  3. 如权利要求1所述的显示面板，其中，所述第二辅助电极子层与所述有机层之间开设有与所述凹槽部连通的开口，所述金属层设置于所述开口处，并分别与所述第二辅助电极子层和所述阴极层相连。
  4. 如权利要求3所述的显示面板，其中，所述有机层包括位于所述像素定义层上方的第一有机子层和设置于所述辅助电极层上的第二有机子层，且所述第一有机子层和所述第二有机子层的材料相同，所述开口开设于所述第一有机子层与所述第二辅助电极子层之间。
  5. 如权利要求1所述的显示面板，其中，所述第一辅助电极子层的材料为铝或银，所述第二辅助电极子层的材料为透明氧化物。
  6. 如权利要求1所述的显示面板，其中，所述有机层的材料为导体图形材料，所述金属层的材料为导体电极材料，所述导体图形材料与所述导体电极材料互相排斥。
  7. 如权利要求1所述的显示面板，其中，还包括设置于所述基板上且与所述像素开口位置相对应的阳极层、以及设置于所述像素开口内且位于所述阳极层上的有机发光层，所述电子传输层设置于所述有机发光层、像素定义层和所述辅助电极层上。
  8. 一种显示面板的制作方法，包括以下步骤：
    提供一基板，在所述基板上形成像素定义层，所述像素定义层上形成有多个像素开口；
    在所述像素定义层上形成邻设于各所述像素开口的辅助电极层；所述辅助电极层包括形成于所述像素定义层上的第一辅助电极子层、以及形成于所述第一辅助电极子层上的第二辅助电极子层，所述第一辅助电极子层靠近所述像素开口处形成凹槽部；
    在所述像素定义层和所述辅助电极层上依次形成电子传输层和阴极层；及
    在所述阴极层上形成有机层，然后在所述第二辅助电极子层与所述阴极层之间形成与所述凹槽部位置相对应的金属层。
  9. 如权利要求8所述显示面板的制作方法，其中，所述在所述像素定义层上形成邻设于各所述像素开口的辅助电极层；所述辅助电极层包括形成于所述像素定义层上的第一辅助电极子层、以及形成于所述第一辅助电极子层上的第二辅助电极子层，所述第一辅助电极子层靠近所述像素开口处形成凹槽部包括：
    在所述像素定义层上形成第一辅助电极子层，且所述第一辅助电极子层的厚度大于所述电子传输层、阴极层和所述有机层的厚度之和；
    在所述第一辅助电极子层上形成第二辅助电极子层；及
    在所述第一辅助电极子层靠近所述像素开口处形成凹槽部。
  10. 如权利要求9所述显示面板的制作方法，其中，所述在所述阴极层上形成有机层，然后在所述第二辅助电极子层与所述阴极层之间形成与所述凹槽部位置相对应的金属层，包括：
    在所述阴极层上形成有机层，所述有机层的材料为导体图形材料；
    采用与所述有机层的导体图形材料相互排斥的导体电极材料在所述第二辅助电极子层与所述阴极层之间的开口处形成金属层。
  11. 如权利要求10所述显示面板的制作方法，其中，所述有机层和所述金属层均采用蒸镀的方式制作而成。
  12. 如权利要求11所述显示面板的制作方法，其中，所述有机层的蒸镀温度为150~250℃。
  13. 如权利要求11所述显示面板的制作方法，其中，所述金属层的蒸镀温度为500~650℃。
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