WO2021120340A1 - Oled 显示器及其制作方法 - Google Patents

Oled 显示器及其制作方法 Download PDF

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Publication number
WO2021120340A1
WO2021120340A1 PCT/CN2020/070083 CN2020070083W WO2021120340A1 WO 2021120340 A1 WO2021120340 A1 WO 2021120340A1 CN 2020070083 W CN2020070083 W CN 2020070083W WO 2021120340 A1 WO2021120340 A1 WO 2021120340A1
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Prior art keywords
layer
driving circuit
organic light
oled display
display area
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PCT/CN2020/070083
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English (en)
French (fr)
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尹雪兵
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武汉华星光电半导体显示技术有限公司
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Priority to US16/761,537 priority Critical patent/US20210184168A1/en
Publication of WO2021120340A1 publication Critical patent/WO2021120340A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors

Definitions

  • the present invention relates to the field of display technology, in particular to an OLED display and a manufacturing method thereof.
  • Display panels such as Organic Light-Emitting Diode (OLED for short), have attracted great attention from academia and industry because of their huge development potential in the direction of solid-state lighting and flat panel displays.
  • Organic light-emitting diode (OLED) panels can be made lighter and thinner, so flexible display technology will be the future development trend.
  • OLED display can realize flexible display.
  • various presentation modes for flexible displays such as curved screens, curved screens, and curled screens.
  • increasing the screen-to-body ratio has also become the trend of display technology, especially mobile display. Therefore, the design of the display has also gone through the advanced road of slotting, V-grooving, water drop screen, and O-shaped digging screen. Among them, O-shaped The design and production of the digging screen is the most difficult.
  • the present invention proposes an OLED display structure design and manufacturing method.
  • the inverted trapezoidal structure is designed in the non-display area of the OLED display to effectively block the continuity of the light-emitting layer of the organic layer in the non-display area, so that the packaging can be completed Through laser cutting, the through hole design is completed. Since the organic layer does not have a channel directly connected to the outside world, the reliability of the screen is guaranteed.
  • An embodiment of the present invention provides an OLED display, and the OLED display includes:
  • a barrier layer disposed on the substrate, the barrier layer and the substrate have through holes passing through the barrier layer and the substrate, and the barrier layer has an inverted trapezoidal structure;
  • a TFT driving circuit is disposed on the barrier layer, the TFT driving circuit includes a plurality of TFT electrodes surrounding the through holes, and the TFT driving circuit is not provided with TFT electrodes at the through holes;
  • the organic light-emitting layer is disposed on the insulating layer.
  • the organic light-emitting layer is disconnected at the inverted trapezoidal structure to form a discontinuous film layer;
  • the length of the upper end surface of the inverted trapezoid structure is greater than the length of the lower end surface of the inverted trapezoid structure, and the thickness of the organic light emitting layer is less than the thickness of the inverted trapezoid structure.
  • the substrate has a hole area corresponding to the through hole, a display area corresponding to the TFT driving circuit, and is located between the hole area and the display area The non-display area of, wherein the inverted trapezoid structure is located in the non-display area.
  • the TFT driving circuit, the insulating layer and the organic light emitting layer are disconnected at the inverted trapezoidal structure to form an opening.
  • the encapsulation layer completely covers the opening formed at the inverted trapezoidal structure and the inverted trapezoid by the TFT driving circuit, the insulating layer, and the organic light emitting layer structure.
  • a crack stop wall structure is provided above the barrier layer in the non-display area close to the digging area.
  • the material of the crack stop wall structure and the material of the insulating layer are the same material.
  • the thickness of the inverted trapezoid structure is between 0.5 micrometer and 1 micrometer, and the angle ⁇ of the bottom end of the inverted trapezoidal structure is between 120 degrees and 150 degrees.
  • An embodiment of the present invention also provides an OLED display, and the OLED display includes:
  • a barrier layer disposed on the substrate, the barrier layer and the substrate have through holes passing through the barrier layer and the substrate, and the barrier layer has an inverted trapezoidal structure;
  • a TFT driving circuit is disposed on the barrier layer, the TFT driving circuit includes a plurality of TFT electrodes surrounding the through holes, and the TFT driving circuit is not provided with TFT electrodes at the through holes;
  • the organic light-emitting layer is disposed on the insulating layer.
  • the organic light-emitting layer is disconnected at the inverted trapezoidal structure to form a discontinuous film layer.
  • the substrate has a hole area corresponding to the through hole, a display area corresponding to the TFT driving circuit, and is located between the hole area and the display area The non-display area of, wherein the inverted trapezoid structure is located in the non-display area.
  • the TFT driving circuit, the insulating layer and the organic light emitting layer are disconnected at the inverted trapezoidal structure to form an opening.
  • the encapsulation layer completely covers the opening formed at the inverted trapezoidal structure and the inverted trapezoid by the TFT driving circuit, the insulating layer, and the organic light emitting layer structure.
  • a crack stop wall structure is provided above the barrier layer in the non-display area close to the digging area.
  • the material of the crack stop wall structure and the material of the insulating layer are the same material.
  • the length of the upper end surface of the inverted trapezoidal structure is greater than the length of the lower end surface of the inverted trapezoidal structure.
  • the thickness of the inverted trapezoid structure is between 0.5 micrometer and 1 micrometer, and the angle ⁇ of the bottom end of the inverted trapezoidal structure is between 120 degrees and 150 degrees.
  • the thickness of the organic light-emitting layer is smaller than the thickness of the inverted trapezoid structure.
  • the embodiment of the present invention also provides a manufacturing method of an OLED display, including:
  • S1 forming a barrier layer on a substrate, the substrate having a display area, a digging area, and a non-display area located between the display area and the digging area;
  • TFT driving circuit in the display area of the substrate, the TFT driving circuit including a plurality of TFT electrodes surrounding the through holes, and the TFT driving circuit forming an opening in the non-display area;
  • a digging design is formed on the display, and the camera is placed under the digging area, which can increase the screen-to-body ratio.
  • the organic light-emitting layer film is automatically disconnected at the inverted trapezoidal structure of the flat layer, and the channel for lateral intrusion of water and oxygen is disconnected.
  • the hole area is cut by laser cutting Removal to form through holes, this process greatly reduces the difficulty of production.
  • FIG. 1 is a schematic diagram of the structure of an OLED display provided by an embodiment of the present invention.
  • FIG. 2 is one of the schematic diagrams of the manufacturing process of the OLED display provided by the embodiment of the present invention.
  • FIG. 3 is a second schematic diagram of the manufacturing process of an OLED display provided by an embodiment of the present invention.
  • FIG. 4 is the third schematic diagram of the manufacturing process of the OLED display provided by the embodiment of the present invention.
  • FIG. 5 is a fourth schematic diagram of the manufacturing process of an OLED display provided by an embodiment of the present invention.
  • FIG. 6 is a fifth schematic diagram of the manufacturing process of an OLED display provided by an embodiment of the present invention.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present application, “multiple” means two or more than two, unless otherwise specifically defined.
  • connection should be understood in a broad sense, unless otherwise clearly specified and limited.
  • it can be a fixed connection or a detachable connection.
  • Connected or integrally connected it can be mechanically connected, or electrically connected or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relationship.
  • connection should be understood according to specific circumstances.
  • the "on" or “under” of the first feature of the second feature may include direct contact between the first and second features, or may include the first and second features Not in direct contact but through other features between them.
  • the "above”, “above” and “above” of the first feature on the second feature include the first feature directly above and obliquely above the second feature, or it simply means that the first feature is higher in level than the second feature.
  • the “below”, “below” and “below” of the second feature of the first feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • the embodiment of the present invention provides an OLED display structure. As shown in FIG. 1, there is a digging area 1 in the area A of the OLED display, and the camera is placed under the digging area 1, so that the screen can be improved. Accounted for.
  • the digging area 1 is, for example, an O-shaped digging area 1.
  • This embodiment provides an OLED display, the OLED display including: a substrate;
  • a barrier layer disposed on the substrate, the barrier layer and the substrate have through holes passing through the barrier layer and the substrate, and the barrier layer has an inverted trapezoidal structure;
  • a TFT driving circuit is disposed on the barrier layer, the TFT driving circuit includes a plurality of TFT electrodes surrounding the through holes, and the TFT driving circuit is not provided with TFT electrodes at the through holes;
  • the organic light-emitting layer is disposed on the insulating layer.
  • the organic light-emitting layer is disconnected at the inverted trapezoidal structure to form a discontinuous film layer.
  • the substrate has a punched area corresponding to the through hole, a display area corresponding to the TFT driving circuit, and a non-display area located between the punched area and the display area, wherein the The inverted trapezoid structure is located in the non-display area.
  • the thickness of the organic light-emitting layer is less than the thickness of the inverted trapezoid structure.
  • the OLED display structure includes a substrate 100, a buffer layer 201, a barrier layer 202, and a TFT driving circuit 200 arranged on the barrier layer 202. It also includes an organic light emitting layer 300 arranged on the TFT driving circuit 202, and a cover
  • the barrier layer 202 has an inverted trapezoidal structure in the O-shaped excavated area 1
  • the flat layer 205 in the TFT driving circuit 200 has an inverted trapezoidal structure in the O-shaped excavated area 1.
  • the TFT driving circuit, the insulating layer and the organic light emitting layer are disconnected at the inverted trapezoidal structure to form an opening.
  • the organic light emitting layer 300 is disconnected at the barrier layer 202 and the inverted trapezoidal structure of the flat layer 205.
  • the OLED display has a substrate 100 made of one of polyimide, polyethylene terephthalate and polycarbonate. Then, a buffer layer 201 is covered on the substrate 100.
  • the material of the buffer layer 201 is silicon oxide.
  • the thickness of the buffer layer 201 is between 0.5 ⁇ m and 1 ⁇ m.
  • the buffer layer 201 protects The substrate 100 and the function of blocking water and oxygen.
  • a barrier layer 202 is provided on the buffer layer 201, the material of the barrier layer 202 is silicon oxide, and the thickness of the barrier layer 202 is between 0.5 ⁇ m and 1 ⁇ m.
  • Two inverted trapezoidal structures were fabricated on the barrier layer 202 in the O-shaped digging area 1 through exposure and development: a first inverted trapezoidal structure 202a and a second inverted trapezoidal structure 202b.
  • the bottom angle ⁇ of the structure 202a and the second inverted trapezoidal structure 202b is between 120 degrees and 150 degrees.
  • the length of the upper end surface of the inverted trapezoid structure is greater than the length of the lower end surface of the inverted trapezoid structure.
  • a TFT driving circuit 200 is provided on the barrier layer 202.
  • the TFT driving circuit 200 includes at least a gate insulating layer 203, an insulating insulating layer 204, a flat layer 205, a pixel defining layer 206, and Photoresist layer 207.
  • the gate insulating layer 203 and the insulating insulating layer 204 are inorganic layers, including silicon oxide material and silicon nitride material;
  • the flat layer 205, the pixel definition layer 206, and the photoresist layer 207 are Organic layer.
  • the flat layer 205 is provided with two trapezoidal structures in the O-shaped digging area 1: a first trapezoidal structure 205a and a second trapezoidal structure 205b, the first trapezoidal structure 205a and the second trapezoidal structure
  • the structure 205b acts as a crack stop wall, and plays a role in preventing crack propagation during the cutting process.
  • a crack stop wall structure is arranged above the barrier layer in the non-display area close to the hole-digging area.
  • the pixel definition layer 206 and the photoresist layer 207 are also provided with a barrier structure to prevent the packaging liquid from overflowing when the display is packaged.
  • One or more barrier wall structures of the pixel definition layer 206 and the photoresist layer 207 may be provided.
  • a barrier wall is taken as an example for illustration.
  • the material of the crack arrest wall structure and the material of the insulating layer are the same material.
  • a layer of organic light emitting layer 300 is vapor-deposited on the TFT driving circuit 200.
  • the organic light emitting layer 300 includes: a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, a cathode, a cover optical layer, and a lithium fluoride protective layer. Since the overall thickness of the organic light-emitting layer 300 is less than 0.4 micrometers, each functional layer of the organic light-emitting layer 300 is not shown in the figure.
  • the first inverted trapezoidal structure 202a (not shown in the figure) and the second inverted trapezoidal structure 202b (not shown in the figure) are relatively special inverted trapezoidal structures, and the organic light-emitting layer 300
  • the overall thickness is relatively small. Therefore, when the organic light-emitting layer 300 is vapor-deposited, the organic light-emitting layer 300 will be disconnected at the first inverted trapezoidal structure 202a and the second inverted trapezoidal structure 202b to avoid continuous formation. ⁇ The film layer.
  • an encapsulation layer 400 is subsequently fabricated on the organic light-emitting layer 300, and the encapsulation layer completely covers the TFT driving circuit, the insulating layer, and the organic light-emitting layer in the inverted trapezoidal shape.
  • the encapsulation layer 400 includes a first inorganic barrier layer 401, an organic barrier layer 402 and a second inorganic barrier layer 403.
  • the first inorganic barrier layer 401 blocks the intrusion of water and oxygen, and then remove the O-shaped hole on the first inorganic barrier layer 401
  • the organic barrier layer 402 is fabricated in other regions outside the region corresponding to region 1, and the organic barrier layer 402 can release stress.
  • the second inorganic barrier layer 403 is fabricated on the organic barrier layer 402. The second inorganic barrier layer 403 covers the organic barrier layer 402 and the O-shaped holed region 1.
  • laser cutting is used to cut all the film layers in the O-shaped digging area 1 to form through holes. That is, there is a through hole penetrating the OLED display in the O-shaped hole area 1.
  • the embodiment of the present invention also provides a manufacturing method of an OLED display, including:
  • S2 forms an inverted trapezoid structure on the barrier layer of the non-display area
  • TFT driving circuit in the display area of the substrate, the TFT driving circuit including a plurality of TFT electrodes surrounding the through holes, and the TFT driving circuit forming an opening in the non-display area;
  • the barrier layer is etched into an inverted trapezoid pattern structure in the digging area through exposure and development, the thickness of the barrier layer is about 0.5-1 micron, and the angle ⁇ of the inverted trapezoid structure is in the range of 120°-150° .
  • the thickness of the organic layer does not exceed 0.3 microns, it cannot cover the inverted trapezoidal steps, and discontinuous cross-sections will be formed at the inverted trapezoidal structure. Therefore, there is no need to design an opening cover for the digging area when the organic layer is evaporated. Avoidance greatly reduces the difficulty of production.
  • the organic light-emitting layer forms a discontinuous film layer at the inverted trapezoidal structure, which can prevent the lateral intrusion of water vapor.

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Abstract

本发明公开了一种OLED显示器及其制作方法，所述OLED显示器包括：基底、阻隔层、TFT驱动电路、绝缘层、有机发光层以及封装层；所述阻隔层具有倒梯形结构；所述有机发光层在所述倒梯形结构处断开。通过设计倒梯形结构，使得有机发光层膜层在平坦层的倒梯形结构处自动断开，断开水氧侧向入侵的通道，在完成封装之后，通过激光镭射切割的方式，形成通孔，此工艺大大降低了制作难度。

Description

OLED显示器及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示器及其制作方法。
 背景技术
显示面板，如有机发光二极管（Organic Light-Emitting Diode，简称：OLED）因其在固态照明和平板显示的方向拥有巨大的发展潜力而得到了学术界和产业界的极大关注。有机发光二极管（OLED）平板可以做的更轻更薄，因而柔性显示技术将是未来的发展趋势。
OLED显示的最大优点是可以实现柔性显示。柔性显示的呈现方式各种各样，如曲面屏，弯折屏，卷曲屏等。同时提升屏占比也成为显示技术尤其是移动显示的趋势潮流，因此显示屏的设计也经历了挖槽，V-挖槽，水滴屏，O型挖孔屏的进阶之路，其中O型挖孔屏的设计及制作难度最大。
 技术问题
本发明提出了一种OLED显示器结构设计及制作方法，在OLED显示器的非显示区域内设计倒梯形的结构可以有效阻断有机层发光层在非显示区域内的连续性，从而可以在完成封装之后，通过激光镭射切割，完成通孔设计，由于有机层没有与外界直接连接的通道，因此保证了屏幕的可靠性。
 技术解决方案
本发明提供的技术方案如下：
本发明实施例提供一种OLED显示器，所述OLED显示器包括：
基底；
阻隔层，设置于所述基底上，所述阻隔层和所述基底具有穿过所述阻隔层和所述基底的通孔，所述阻隔层具有倒梯形结构；
TFT驱动电路，设置于所述阻隔层上，所述TFT驱动电路包括围绕所述通孔的多个TFT电极，所述TFT驱动电路在所述通孔处不设TFT电极；
绝缘层，设置在所述TFT驱动电路上，所述绝缘层包括暴露所述通孔的开口；
有机发光层，设置在所述绝缘层上；以及
封装层，设置在所述有机发光层上；
其中，所述有机发光层在所述倒梯形结构处断开，形成不连续的膜层；
所述倒梯形结构的上端面长度大于所述倒梯形结构的下端面的长度，所述有机发光层的厚度小于所述倒梯形结构的厚度。
根据本发明实施例所提供的OLED显示器，所述基底具有与所述通孔对应的挖孔区域、与所述TFT驱动电路对应的显示区域以及位于所述挖孔区域与所述显示区域之间的非显示区域，其中，所述倒梯形结构位于所述非显示区域中。
根据本发明实施例所提供的OLED显示器，所述TFT驱动电路、所述绝缘层和所述有机发光层在所述倒梯形结构处断开，形成开口。
根据本发明实施例所提供的OLED显示器，所述封装层完全覆盖所述TFT驱动电路、所述绝缘层和所述有机发光层在所述倒梯形结构处形成的所述开口以及所述倒梯形结构。
根据本发明实施例所提供的OLED显示器，在所述非显示区域内靠近所述挖孔区域的所述阻隔层上方设置有止裂墙结构。
根据本发明实施例所提供的OLED显示器，所述止裂墙结构的材料与所述绝缘层的材料为相同材料。
根据本发明实施例所提供的OLED显示器，所述倒梯形结构的厚度为0.5微米到1微米之间，所述倒梯形结构的底端θ角为120度到150度之间。
本发明实施例还提供一种OLED显示器，所述OLED显示器包括：
基底；
阻隔层，设置于所述基底上，所述阻隔层和所述基底具有穿过所述阻隔层和所述基底的通孔，所述阻隔层具有倒梯形结构；
TFT驱动电路，设置于所述阻隔层上，所述TFT驱动电路包括围绕所述通孔的多个TFT电极，所述TFT驱动电路在所述通孔处不设TFT电极；
绝缘层，设置在所述TFT驱动电路上，所述绝缘层包括暴露所述通孔的开口；
有机发光层，设置在所述绝缘层上；以及
封装层，设置在所述有机发光层上；
其中，所述有机发光层在所述倒梯形结构处断开，形成不连续的膜层。
根据本发明实施例所提供的OLED显示器，所述基底具有与所述通孔对应的挖孔区域、与所述TFT驱动电路对应的显示区域以及位于所述挖孔区域与所述显示区域之间的非显示区域，其中，所述倒梯形结构位于所述非显示区域中。
根据本发明实施例所提供的OLED显示器，所述TFT驱动电路、所述绝缘层和所述有机发光层在所述倒梯形结构处断开，形成开口。
根据本发明实施例所提供的OLED显示器，所述封装层完全覆盖所述TFT驱动电路、所述绝缘层和所述有机发光层在所述倒梯形结构处形成的所述开口以及所述倒梯形结构。
根据本发明实施例所提供的OLED显示器，在所述非显示区域内靠近所述挖孔区域的所述阻隔层上方设置有止裂墙结构。
根据本发明实施例所提供的OLED显示器，所述止裂墙结构的材料与所述绝缘层的材料为相同材料。
根据本发明实施例所提供的OLED显示器，所述倒梯形结构的上端面长度大于所述倒梯形结构的下端面的长度。
根据本发明实施例所提供的OLED显示器，所述倒梯形结构的厚度为0.5微米到1微米之间，所述倒梯形结构的底端θ角为120度到150度之间。
根据本发明实施例所提供的OLED显示器，所述有机发光层的厚度小于所述倒梯形结构的厚度。
本发明实施例还提供一种OLED显示器的制作方法，包括：
S1、在基底上形成阻隔层，所述基底具有显示区域、挖孔区域和位于所述显示区域与所述挖孔区域之间的非显示区域；
S2、在所述非显示区域的所述阻隔层上形成倒梯形结构；
S3、在所述基底的所述显示区域中制作TFT驱动电路，所述TFT驱动电路包括围绕所述通孔的多个TFT电极，所述TFT驱动电路在所述非显示区域形成开口；
S4、在所述TFT驱动电路上形成绝缘层，所述绝缘层在所述非显示区域形成开口；
S5、在所述绝缘层上形成有机发光层，所述有机发光层在所述倒梯形结构处断开，形成不连续膜层，所述有机发光层在所述非显示区域形成开口；以及
S6、在所述TFT驱动电路、所述绝缘层和所述有机发光层上覆盖封装层。
 有益效果
在显示器上形成挖孔设计，摄像头置于挖孔区域下方，可以提高屏占比。通过设计倒梯形结构，使得有机发光层膜层在平坦层的倒梯形结构处自动断开，断开水氧侧向入侵的通道，在完成封装之后，通过激光镭射切割的方式，将挖孔区域切除，形成通孔，此工艺大大降低了制作难度。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的一种OLED显示器结构示意图。
图2为本发明实施例提供的OLED显示器制作流程示意图之一。
图3为本发明实施例提供的OLED显示器制作流程示意图之二。
图4为本发明实施例提供的OLED显示器制作流程示意图之三。
图5为本发明实施例提供的OLED显示器制作流程示意图之四。
图6为本发明实施例提供的OLED显示器制作流程示意图之五。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
本发明实施例提供一种OLED显示器结构，如图1所示，在所述OLED显示器的A区域具有一处挖孔区域1，摄像头置于所述挖孔区域1下方，因此可以提高屏幕的屏占比。挖孔区域1例如为O型挖孔区域1。
本实施例提供一种OLED显示器，所述OLED显示器包括：基底；
阻隔层，设置于所述基底上，所述阻隔层和所述基底具有穿过所述阻隔层和所述基底的通孔，所述阻隔层具有倒梯形结构；
TFT驱动电路，设置于所述阻隔层上，所述TFT驱动电路包括围绕所述通孔的多个TFT电极，所述TFT驱动电路在所述通孔处不设TFT电极；
绝缘层，设置在所述TFT驱动电路上，所述绝缘层包括暴露所述通孔的开口；
有机发光层，设置在所述绝缘层上；以及
封装层，设置在所述有机发光层上；
其中，所述有机发光层在所述倒梯形结构处断开，形成不连续的膜层。
其中，所述基底具有与所述通孔对应的挖孔区域、与所述TFT驱动电路对应的显示区域以及位于所述挖孔区域与所述显示区域之间的非显示区域，其中，所述倒梯形结构位于所述非显示区域中。以及所述有机发光层的厚度小于所述倒梯形结构的厚度。
所述OLED显示器结构包括基底100，缓冲层201，阻隔层202以及设置在所述阻隔层202之上的TFT驱动电路200，还包括：设置在TFT驱动电路202上的有机发光层300，以及覆盖所述有机发光层300的封装层400；其中，所述封装层400包括：依次在所述有机发光层300上的第一无机阻隔层401、有机阻隔层402和第二无机阻隔层403。其中，在所述阻隔层202在所述O型挖孔区域1内为倒梯形结构，所述TFT驱动电路200中的平坦层205在所述O型挖孔区域1内也为倒梯形结构，所述TFT驱动电路、所述绝缘层和所述有机发光层在所述倒梯形结构处断开，形成开口。所述有机发光层300在所述阻隔层202以及所述平坦层205的所述倒梯形结构处断开。
如图2所示，所述OLED显示器具有一基底100，所述基底100为聚酰亚胺、聚对苯二甲酸乙二醇酯和聚碳酸酯其中一种材料制成。然后，在所述基底100上覆盖一层缓冲层201，所述缓冲层201的材料为氧化硅，所述缓冲层201的厚度为0.5微米到1微米之间，所述缓冲层201起到保护基底100和阻隔水氧的功能。在所述缓冲层201之上设有一阻隔层202，所述阻隔层202的材料为氧化硅，所述阻隔层202的厚度为0.5微米到1微米之间。通过曝光显影的方式在所述O型挖孔区域1内的所述阻隔层202上制作了两个倒梯形结构：第一倒梯形结构202a和第二倒梯形结构202b，所述第一倒梯形结构202a和所述第二倒梯形结构202b的底角θ角为120度到150度之间。其中，所述倒梯形结构的上端面长度大于所述倒梯形结构的下端面的长度。
如图3所示，在所述阻隔层202之上设置有TFT驱动电路200，所述TFT驱动电路200至少包括：栅极绝缘层203、绝缘隔绝层204、平坦层205、像素定义层206以及光阻层207。其中，所述栅极绝缘层203和所述绝缘隔绝层204为无机层，包含氧化硅材料以及氮化硅材料；所述平坦层205、所述像素定义层206以及所述光阻层207为有机层。其中，在所述平坦层205在所述O型挖孔区域1内设有两个梯形结构：第一梯形结构205a和第二梯形结构205b，所述第一梯形结构205a和所述第二梯形结构205b作为止裂墙，在切割的过程之中，起到阻止裂纹扩展的作用。在所述非显示区域内靠近所述挖孔区域的所述阻隔层上方设置有止裂墙结构。所述像素定义层206以及所述光阻层207也都设有挡墙结构，防止显示器在封装的时候封装液溢出。所述像素定义层206以及所述光阻层207的挡墙结构可以设置一个或多个，本实施例以一个挡墙为例说明。其中，所述止裂墙结构的材料与所述绝缘层的材料为相同材料。
如图4所示，在所述TFT驱动电路200上蒸镀有一层有机发光层300。所述有机发光层300包括：空穴注入层、空穴传输层、发光层、电子传输层、电子注入层、阴极、覆盖光学层以及氟化锂保护层。由于所述有机发光层300的整体厚度要小于0.4微米，因此有机发光层300的各个功能层并未在图中画出。而且，由于所述第一倒梯形结构202a（图中未标出）和所述第二倒梯形结构202b（图中未标出）是比较特殊的倒梯形结构，并且所述有机发光层300的整体厚度比较小，因此在蒸镀所述有机发光层300的时候，所述有机发光层300会在所述第一倒梯形结构202a和所述第二倒梯形结构202b处断开，避免形成连续的膜层。
如图5和图6所示，随后在所述有机发光层300上制作封装层400，所述封装层完全覆盖所述TFT驱动电路、所述绝缘层和所述有机发光层在所述倒梯形结构处形成的所述开口以及所述倒梯形结构。所述封装层400包括第一无机阻隔层401，有机阻隔层402以及第二无机阻隔层403。在所述有机发光层300上覆盖所述第一无机阻隔层401，所述第一无机阻隔层401阻隔水氧的入侵，接着在所述第一无机阻隔层401上除去所述O型挖孔区域1所对应的区域外的其他区域制作所述有机阻隔层402，所述有机阻隔层402可以缓释应力，然后在所述有机阻隔层402上制作所述第二无机阻隔层403，所述第二无机阻隔层403覆盖所述有机阻隔层402以及所述O型挖孔区域1。
如图6所示，利用镭射切割，将所述O型挖孔区域1的所有膜层切除，形成通孔。即在所述O型挖孔区域1具有一贯穿所述OLED显示器的通孔。
本发明实施例还提供了一种OLED显示器的制作方法，包括：
S1、S1、在基底上形成阻隔层，所述基底具有显示区域、挖孔区域和位于所述显示区域与所述挖孔区域之间的非显示区域；
S2在所述非显示区域的所述阻隔层上形成倒梯形结构；
S3、在所述基底的所述显示区域中制作TFT驱动电路，所述TFT驱动电路包括围绕所述通孔的多个TFT电极，所述TFT驱动电路在所述非显示区域形成开口；
S4、在所述TFT驱动电路上形成绝缘层，所述绝缘层在所述非显示区域形成开口；
S5、在所述绝缘层上形成有机发光层，所述有机发光层在所述倒梯形结构处断开，形成不连续膜层，所述有机发光层在所述非显示区域形成开口；
S6、在所述TFT驱动电路、所述绝缘层和所述有机发光层上覆盖封装层。
本发明提供的OLED显示器，通过曝光显影的方式在挖孔区域将阻隔层蚀刻出倒梯形图案结构，阻隔层厚度在0.5-1微米左右，倒梯形结构的θ角在120°-150°范围内。在后期制作有机发光层时，由于有机层的厚度不超过0.3微米无法覆盖倒梯形台阶，会在倒梯形结构处形成不连续的断面，因此蒸镀有机层时无需设计开口罩对挖孔区域进行避让，大大降低了制作难度。同时，有机发光层在倒梯形结构处形成不连续膜层，可以阻止水汽的侧向入侵。
以上对本申请实施例所提供的一种OLED显示器及其制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (17)

  1. 一种OLED显示器，所述OLED显示器包括：
    基底；
    阻隔层，设置于所述基底上，所述阻隔层和所述基底具有穿过所述阻隔层和所述基底的通孔，所述阻隔层具有倒梯形结构；
    TFT驱动电路，设置于所述阻隔层上，所述TFT驱动电路包括围绕所述通孔的多个TFT电极，所述TFT驱动电路在所述通孔处不设TFT电极；
    绝缘层，设置在所述TFT驱动电路上，所述绝缘层包括暴露所述通孔的开口；
    有机发光层，设置在所述绝缘层上；以及
    封装层，设置在所述有机发光层上；
    其中，所述有机发光层在所述倒梯形结构处断开，形成不连续的膜层；
    所述倒梯形结构的上端面长度大于所述倒梯形结构的下端面的长度，所述有机发光层的厚度小于所述倒梯形结构的厚度。
  2. 根据权利要求1所述的OLED显示器，其中所述基底具有与所述通孔对应的挖孔区域、与所述TFT驱动电路对应的显示区域以及位于所述挖孔区域与所述显示区域之间的非显示区域，其中，所述倒梯形结构位于所述非显示区域中。
  3. 根据权利要求2所述的OLED显示器，其中所述TFT驱动电路、所述绝缘层和所述有机发光层在所述倒梯形结构处断开，形成开口。
  4. 根据权利要求3所述的OLED显示器，其中所述封装层完全覆盖所述TFT驱动电路、所述绝缘层和所述有机发光层在所述倒梯形结构处形成的所述开口以及所述倒梯形结构。
  5. 根据权利要求2所述的OLED显示器，其中在所述非显示区域内靠近所述挖孔区域的所述阻隔层上方设置有止裂墙结构。
  6. 根据权利要求5所述的OLED显示器，其中所述止裂墙结构的材料与所述绝缘层的材料为相同材料。
  7. 根据权利要求1所述的OLED显示器，其中所述倒梯形结构的厚度为0.5微米到1微米之间，所述倒梯形结构的底端θ角为120度到150度之间。
  8. 一种OLED显示器，所述OLED显示器包括：
    基底；
    阻隔层，设置于所述基底上，所述阻隔层和所述基底具有穿过所述阻隔层和所述基底的通孔，所述阻隔层具有倒梯形结构；
    TFT驱动电路，设置于所述阻隔层上，所述TFT驱动电路包括围绕所述通孔的多个TFT电极，所述TFT驱动电路在所述通孔处不设TFT电极；
    绝缘层，设置在所述TFT驱动电路上，所述绝缘层包括暴露所述通孔的开口；
    有机发光层，设置在所述绝缘层上；以及
    封装层，设置在所述有机发光层上；
    其中，所述有机发光层在所述倒梯形结构处断开，形成不连续的膜层。
  9. 根据权利要求8所述的OLED显示器，其中所述基底具有与所述通孔对应的挖孔区域、与所述TFT驱动电路对应的显示区域以及位于所述挖孔区域与所述显示区域之间的非显示区域，其中，所述倒梯形结构位于所述非显示区域中。
  10. 根据权利要求9所述的OLED显示器，其中所述TFT驱动电路、所述绝缘层和所述有机发光层在所述倒梯形结构处断开，形成开口。
  11. 根据权利要求10所述的OLED显示器，其中所述封装层完全覆盖所述TFT驱动电路、所述绝缘层和所述有机发光层在所述倒梯形结构处形成的所述开口以及所述倒梯形结构。
  12. 根据权利要求9所述的OLED显示器，其中在所述非显示区域内靠近所述挖孔区域的所述阻隔层上方设置有止裂墙结构。
  13. 根据权利要求12所述的OLED显示器，其中所述止裂墙结构的材料与所述绝缘层的材料为相同材料。
  14. 根据权利要求8所述的OLED显示器，其中所述倒梯形结构的上端面长度大于所述倒梯形结构的下端面的长度。
  15. 根据权利要求14所述的OLED显示器，其中所述倒梯形结构的厚度为0.5微米到1微米之间，所述倒梯形结构的底端θ角为120度到150度之间。
  16. 根据权利要求8所述的OLED显示器，其中所述有机发光层的厚度小于所述倒梯形结构的厚度。
  17. 一种OLED显示器的制作方法，包括：
    S1、在基底上形成阻隔层，所述基底具有显示区域、挖孔区域和位于所述显示区域与所述挖孔区域之间的非显示区域；
    S2、在所述非显示区域的所述阻隔层上形成倒梯形结构；
    S3、在所述基底的所述显示区域中制作TFT驱动电路，所述TFT驱动电路包括围绕所述通孔的多个TFT电极，所述TFT驱动电路在所述非显示区域形成开口；
    S4、在所述TFT驱动电路上形成绝缘层，所述绝缘层在所述非显示区域形成开口；
    S5、在所述绝缘层上形成有机发光层，所述有机发光层在所述倒梯形结构处断开，形成不连续膜层，所述有机发光层在所述非显示区域形成开口；以及
    S6、在所述TFT驱动电路、所述绝缘层和所述有机发光层上覆盖封装层。
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