WO2021114416A1 - 一种显示面板及显示装置 - Google Patents

一种显示面板及显示装置 Download PDF

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Publication number
WO2021114416A1
WO2021114416A1 PCT/CN2019/129072 CN2019129072W WO2021114416A1 WO 2021114416 A1 WO2021114416 A1 WO 2021114416A1 CN 2019129072 W CN2019129072 W CN 2019129072W WO 2021114416 A1 WO2021114416 A1 WO 2021114416A1
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Prior art keywords
layer
light
black matrix
thickness
display panel
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PCT/CN2019/129072
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English (en)
French (fr)
Inventor
樊勇
孙洋
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/627,818 priority Critical patent/US11296143B2/en
Publication of WO2021114416A1 publication Critical patent/WO2021114416A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes

Definitions

  • the present invention relates to the technical field of display panels, in particular to a display panel and a display device.
  • Micro-light emitting diodes is a new type of light-emitting display technology that can provide display devices with higher brightness, better luminous efficiency and lower power consumption than OLED technology. It is a new generation of display after OLED. The technology has been favored and deployed by major manufacturers. MicroLED mainly arranges the miniature LEDs ( ⁇ 100um) on the substrate in an array to form an LED array with high density and small size.
  • FIG. 1 shows a schematic structural diagram of a display panel in the prior art, including a base substrate 11, a light shielding layer 12, a buffer layer 13, an active layer 14, an insulating layer 15, and a gate layer arranged in sequence. 16.
  • the self-luminous LED in the light-emitting layer 3 is a six-sided light-emitting chip, in the non-display direction adjacent to the black matrix layer, when emitting light, the black matrix layer has a certain degree of light absorption, so that the light emitted by the LED is partially absorbed by the BM. Absorbed, the brightness of the chip is reduced, which in turn affects the luminous efficiency of the device.
  • An object of the present invention is to provide a display panel, which can solve the problem that the light emitted by the LED is partially absorbed by the black matrix layer in the prior art, and the brightness of the chip is reduced, thereby affecting the luminous efficiency of the device.
  • the present invention provides a display panel including a substrate layer, a light-emitting layer, and a composite black matrix layer; wherein the light-emitting layer is disposed on the substrate layer, and the substrate layer on both sides of the light-emitting layer
  • the composite black matrix layer is respectively provided, wherein the composite black matrix layer includes a black matrix layer and a reflective layer.
  • the black matrix layer is disposed on the substrate layer, and the light-reflecting layer covers the side of the black matrix layer.
  • the light-reflecting layer provided on the black matrix layer continuously reflects and reuses the light that is obliquely incident on the black matrix layer in the light-emitting layer, and at the same time prevents the light emitted by the light-emitting layer from being affected by the black matrix layer. Absorb, improve the utilization of light.
  • the black matrix layer is disposed on the substrate, and the light-reflecting layer is disposed on the black matrix layer.
  • the thickness of the composite black matrix layer is less than 10 ⁇ m.
  • the thickness of the black matrix layer is less than 2 ⁇ m, and the thickness of the light-reflecting layer ranges from 2 to 8 ⁇ m.
  • the thickness of the black matrix layer is less than 2 ⁇ m, and the thickness of the light-reflecting layer ranges from 2 to 8 ⁇ m.
  • the light-reflecting layer is disposed on the substrate layer, and the black matrix layer is disposed on the light-reflecting layer.
  • the thickness of the light-reflecting layer is greater than the thickness of the light-emitting layer.
  • the thickness of the black matrix layer is less than 2 ⁇ m
  • the thickness of the reflective layer is in the range of 2-8 ⁇ m.
  • the constituent material of the light-reflecting layer is made of metal, organic material, inorganic material, or other materials with light-reflecting properties.
  • the light-reflecting layer can be formed by a patternable method such as sputtering, evaporation, and photolithography.
  • the constituent material of the light-reflecting layer is a photoresist material.
  • the light-emitting layer is provided with micron-level light-emitting diodes.
  • the substrate layer includes a base substrate, a buffer layer, an active layer, an insulating layer, a gate layer, an interlayer dielectric layer, a source/drain layer, a flat layer, and pixels arranged in sequence. Electrode layer.
  • the present invention also provides a display device, which includes a body on which the display panel related to the present invention is arranged.
  • the beneficial effect of the present invention is to provide a display panel and a display device.
  • a reflective layer is formed on the black matrix layer or a black matrix layer with light-shielding effect is formed on the reflective layer.
  • the chips shield each other from light leakage, and the light-reflecting layer can reflect the light emitted by the light-emitting layer to the upper layer to be emitted from the top, preventing the light emitted by the light-emitting layer from being absorbed by the black matrix layer, thereby increasing the brightness and improving the light-emitting efficiency of the device.
  • FIG. 1 is a schematic diagram of the structure of a display panel provided in the prior art
  • FIG. 2 is a schematic diagram of the structure of a display panel provided by Embodiment 1 of the present invention.
  • FIG. 3 is a schematic structural diagram of a display panel provided by Embodiment 2 of the present invention.
  • FIG. 2 is a schematic diagram of the structure of the display panel provided by this embodiment.
  • the present invention provides a display panel including a substrate layer 1, a light emitting layer 2, a black matrix layer 3, and a reflective layer arranged in sequence. Layer 4.
  • the light-emitting layer 2 is provided on the substrate layer 1, the substrate layer 1 on both sides of the light-emitting layer 2 is respectively provided with a black matrix layer 3, and the side and upper part of the black matrix layer 3 are covered with a light-reflecting layer 4.
  • the total thickness of the black matrix layer 3 and the reflective layer 4 above it is less than 10 ⁇ m, the thickness of the black matrix layer 3 is less than 2 ⁇ m, and the thickness of the reflective layer 4 ranges from 2 to 8 ⁇ m.
  • the light-emitting layer 2 is provided with a plurality of micron-level light-emitting diodes, and the light-reflecting layer 4 can reflect the light emitted by the micron-level light-emitting diodes in the light-emitting layer 2 to the upper layer to be emitted from the top, so as to prevent the light emitted by the light-emitting layer from being absorbed by the black matrix layer.
  • the brightness is improved and the luminous efficiency of the device is improved.
  • the constituent material of the reflective layer 4 is aluminum metal, which is formed by a sputtering method.
  • the material of the reflective layer 4 can also be other metals with reflective functions, or organic or inorganic materials with reflective functions that can be patterned through exposure, development, etching, etc., which are not limited herein.
  • the substrate layer 1 includes a base substrate 11, a buffer layer 12 disposed on the base substrate 11, an active layer 13 disposed on the buffer layer 12, an insulating layer 14 disposed on the active layer 13, and an insulating layer 14
  • the upper gate layer 15, the interlayer dielectric layer 16 provided on the gate layer 15, the source and drain layer 17 provided on the interlayer dielectric layer 16, the flat layer 18 provided on the source and drain layer 17 and the setting The pixel electrode layer 19 on the flat layer 18.
  • the base substrate 11 can be a glass substrate, or a PI film layer, that is, a polyimide film, which serves as the base of the display panel; the polyimide film is a thin-film insulating material with better performance in the world and has strong
  • the tensile strength is formed by polycondensation and casting of pyromellitic dianhydride and diaminodiphenyl ether in a strong polar solvent into a film and then imidization.
  • the material used for the insulating layer 14 is silicon nitride, silicon oxide, silicon oxynitride, etc. can also be used, and the details can be determined as needed and are not limited.
  • the flat layer 18 is made of a transparent organic material, has good elasticity and flexibility, and plays a role of flattening and buffering the stress of the film layer.
  • FIG. 3 shows a schematic diagram of the structure of the display panel provided by this embodiment.
  • the structure of the display panel in this embodiment is roughly the same as that of Embodiment 1.
  • the main difference is that the light-reflecting layer 4 is arranged on the substrate layer 1, and the black matrix layer 3 is arranged on the light-reflecting layer 4.
  • the light-reflecting layer 4 continuously reflects and reuses the light from the light-emitting layer 2 obliquely to the black matrix layer 3, and at the same time prevents the light emitted by the light-emitting layer 2 from being absorbed by the black matrix layer 3, thereby improving the utilization of light.
  • the thickness of the light-reflecting layer 4 is greater than the thickness of the light-emitting layer 2, the thickness of the black matrix layer 3 is less than 2 ⁇ m, and the thickness of the light-reflecting layer 4 ranges from 2 to 8 ⁇ m.
  • Another object of the present invention is to provide a display device including a body on which the display panel related to the present invention is arranged.
  • the beneficial effect of the present invention is to provide a display panel and a display device.
  • a reflective layer is formed on the black matrix layer or a black matrix layer with a light shielding effect is formed on the reflective layer, which satisfies the role of RGB three-color chips to shield each other from light leakage
  • the light-reflecting layer can reflect the light emitted by the light-emitting layer to the upper layer to be emitted from the top, preventing the light emitted by the light-emitting layer from being absorbed by the black matrix layer, thereby increasing the brightness and improving the luminous efficiency of the device.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

一种显示面板及显示装置，显示面板包括基板层(1)、发光层(2)和复合黑色矩阵层；其中所述发光层(2)设置于所述基板层(1)上，所述发光层(2)两侧的所述基板层(1)上分别设置有所述复合黑色矩阵层，其中所述复合黑色矩阵层包括黑色矩阵层(3)和反光层(4)。

Description

一种显示面板及显示装置 技术领域
本发明涉及显示面板技术领域，特别涉及一种显示面板及显示装置。
 背景技术
微米级发光二极管（Micro-light emitting diodes）是一种新型发光显示技术，可提供比OLED技术亮度更高，发光效率更好，功耗更低的显示器件，是目前继OLED之后新一代的显示技术，深受各大厂商垂青和布局。MicroLED主要是将微缩后的LED（<100um）在基板上进行阵列排布，而形成具有高密度微小尺寸的LED阵列。
将MicroLED作为显示屏幕时，首先要实现MicroLED全彩化，其中最直接的方法是将RGB三种颜色LED芯片分别转移到基板上，再进行封装。传统的LCD全彩化工艺中，由于RGB三种颜色光阻距离较近，会发生漏光等现象，造成屏幕对比度降低，为克服这一问题，通常在彩色滤光片的制程中采用在RGB三色光阻之间增加黑色矩阵层(Black Matrix，BM）的方式来遮蔽漏光区，来提高对比度。
请参阅图1，图1所示为现有技术中的显示面板的结构示意图，包括依次设置的衬底基板11、遮光层12、缓冲层13、有源层14、绝缘层15、栅极层16、源漏极层17、平坦层18、黑色矩阵层2和发光层3。由于发光层3中自发光的LED为六面发光芯片，与黑色矩阵层相邻的非显示方向上，在发光时会因为黑色矩阵层具有一定的吸光性，使得LED所发出的光线部分被BM所吸收，芯片亮度降低，进而影响器件的发光效率。
因此，确有必要来开发一种新型的显示面板，以克服现有技术的缺陷。
 技术问题
本发明的一个目的是提供一种显示面板，其能够解决现有技术中LED所发出的光线部分被黑色矩阵层所吸收，芯片亮度降低，进而影响器件的发光效率等问题。
 技术解决方案
为实现上述目的，本发明提供一种显示面板，包括基板层、发光层和复合黑色矩阵层；其中所述发光层设置于所述基板层上，所述发光层两侧的所述基板层上分别设置有所述复合黑色矩阵层，其中所述复合黑色矩阵层包括黑色矩阵层和反光层。
进一步的，在其他实施方式中，其中所述黑色矩阵层设置于所述基板层上，所述反光层覆盖在所述黑色矩阵层的侧部上。
其中所述黑色矩阵层上设置的所述反光层，将所述发光层中斜射到所述黑色矩阵层上的光线不断反射重新利用，同时避免所述发光层发出的光被所述黑色矩阵层吸收，提高光线的利用率。
进一步的，在其他实施方式中，其中所述黑色矩阵层设置在所述基板上，所述反光层设置在所述黑色矩阵层上。
进一步的，在其他实施方式中，其中所述复合黑色矩阵层的厚度小于10μm。
进一步的，在其他实施方式中，其中所述黑色矩阵层的厚度小于2μm，所述反光层的厚度范围为2-8μm。
进一步的，在其他实施方式中，其中所述黑色矩阵层的厚度小于2μm，所述反光层的厚度范围为2-8μm。
进一步的，在其他实施方式中，其中所述反光层设置于所述基板层上，所述黑色矩阵层设置于所述反光层上。
进一步的，在其他实施方式中，其中所述反光层的厚度大于所述发光层的厚度。
进一步的，在其他实施方式中，其中其中所述黑色矩阵层的厚度小于2μm，所述反光层的厚度范围为2-8μm。
进一步的，在其他实施方式中，其中所述反光层的构成材料采用金属、有机材料、无机材料或其他具有反光特性的材料。
进一步的，在其他实施方式中，其中所述反光层可通过溅镀、蒸镀、光刻等可图形化的方法形成的。
进一步的，在其他实施方式中，其中所述反光层的构成材料采用光阻材料。
进一步的，在其他实施方式中，其中所述发光层中设置有微米级发光二极管。
进一步的，在其他实施方式中，其中所述基板层包括依次设置的衬底基板、缓冲层、有源层、绝缘层、栅极层、层间介质层、源漏极层、平坦层和像素电极层。
为实现上述目的，本发明还提供了一种显示装置，其包括本体，所述本体上设置有本发明涉及的所述显示面板。
 有益效果
相对于现有技术，本发明的有益效果在于提供一种显示面板及显示装置，在黑色矩阵层上形成一层反光层或者在反光层上形成具有遮光作用的黑色矩阵层，既满足RGB三色芯片相互遮蔽漏光的作用，同时反光层可将发光层发出的光反射至上层由顶端发出，避免发光层发出的光被黑色矩阵层吸收，从而使亮度提高，提升器件的发光效率。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中提供的显示面板的结构示意图；
图2为本发明实施例1提供的显示面板的结构示意图；
图3为本发明实施例2提供的显示面板的结构示意图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本发明的示例性实施例的目的。但是本发明可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
实施例1
请参阅图2，图2为本实施例提供的显示面板的结构示意图，为实现上述目的，本发明提供一种显示面板，包括依次设置的基板层1、发光层2、黑色矩阵层3和反光层4。
发光层2设置于基板层1上，发光层2两侧的基板层1上分别设置有黑色矩阵层3，黑色矩阵层3的侧部和上部覆盖有反光层4。
黑色矩阵层3和其上部的反光层4的总厚度小于10μm，黑色矩阵层3的厚度小于2μm，反光层4的厚度范围为2-8μm。
其中发光层2中设置有多个微米级发光二极管，其中反光层4可将发光层2中微米级发光二极管发出的光反射至上层由顶端发出，避免发光层发出的光被黑色矩阵层吸收，从而使亮度提高，提升器件的发光效率。
在本实施例中，反光层4的构成材料采用铝金属，铝金属是通过溅镀方法形成的。在其他实施方式中，反光层4的构成材料也可以采用其他具有反射功能的金属，或通过曝光显影、刻蚀等可图形化具有反光作用的有机材料或无机材料等，在此不做限定。
基板层1包括衬底基板11、设置于衬底基板11上的缓冲层12、设置于缓冲层12上的有源层13、设置于有源层13上的绝缘层14、设置于绝缘层14上的栅极层15、设置于栅极层15上的层间介质层16、设置于层间介质层16上的源漏极层17、设置于源漏极层17上的平坦层18和设置于平坦层18上的像素电极层19。
衬底基板11可为玻璃基板，或PI膜层，即聚酰亚胺薄膜，作为显示面板的基底；所述聚酰亚胺薄膜是世界上性能较好的薄膜类绝缘材料，具有较强的拉伸强度，由均苯四甲酸二酐和二氨基二苯醚在强极性溶剂中经缩聚并流延成膜再经亚胺化而成。
在本实施例中，绝缘层14采用的材料为氮化硅，也可以使用氧化硅和氮氧化硅等，具体可以随需要而定，并无限定。平坦层18采用透明的有机材料，具有良好的弹性和柔韧性，起到平坦化及缓冲膜层应力的作用。
实施例2
请参阅图3，图3所示为本实施例提供的显示面板的结构示意图，本实施例中的显示面板结构与实施例1大致相同，其相同的结构可参照上述方式，此处不再赘述，其主要不同之处在于，反光层4设置于基板层1上，黑色矩阵层3设置于反光层4上。
反光层4将发光层2斜射到黑色矩阵层3上的光线不断反射重新利用，同时避免发光层2发出的光被黑色矩阵层3吸收，提高光线的利用率。
在本实施例中，反光层4的厚度大于发光层2的厚度，黑色矩阵层3的厚度小于2μm，反光层4的厚度范围为2-8μm。
实施例3
本发明的另一目的是提供一种显示装置，其包括本体，所述本体上设置有本发明涉及的所述显示面板。
本发明的有益效果在于提供一种显示面板及显示装置，在黑色矩阵层上形成一层反光层或者在反光层上形成具有遮光作用的黑色矩阵层，既满足RGB三色芯片相互遮蔽漏光的作用，同时反光层可将发光层发出的光反射至上层由顶端发出，避免发光层发出的光被黑色矩阵层吸收，从而使亮度提高，提升器件的发光效率。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (18)

  1. 一种显示面板，其中，包括基板层、发光层和复合黑色矩阵层；其中所述发光层设置于所述基板层上，所述发光层两侧的所述基板层上分别设置有所述复合黑色矩阵层，其中所述复合黑色矩阵层包括黑色矩阵层和反光层。
  2. 根据权利要求1所述的显示面板，其中，所述黑色矩阵层设置于所述基板层上，所述反光层覆盖在所述黑色矩阵层的侧部上。
  3. 根据权利要求1所述的显示面板，其中，所述黑色矩阵层设置在所述基板上，所述反光层设置在所述黑色矩阵层上。
  4. 根据权利要求1所述的显示面板，其中，所述复合黑色矩阵层的厚度小于10μm。
  5. 根据权利要求2所述的显示面板，其中，所述黑色矩阵层的厚度小于2μm，所述反光层的厚度范围为2-8μm。
  6. 根据权利要求3所述的显示面板，其中，所述黑色矩阵层的厚度小于2μm，所述反光层的厚度范围为2-8μm。
  7. 根据权利要求1所述的显示面板，其中，所述反光层设置于所述基板层上，所述黑色矩阵层设置于所述反光层上。
  8. 根据权利要求7所述的显示面板，其中，所述反光层的厚度大于所述发光层的厚度。
  9. 根据权利要求1所述的显示面板，其中，所述反光层的构成材料采用金属或有机材料。
  10. 一种显示装置，其包括本体，其中，其包括本体，所述本体上设置有根据权利要求1所述的显示面板。
  11. 根据权利要求1所述的显示装置，其中，所述黑色矩阵层设置于所述基板层上，所述反光层覆盖在所述黑色矩阵层的侧部上。
  12. 根据权利要求1所述的显示装置，其中，所述黑色矩阵层设置在所述基板上，所述反光层设置在所述黑色矩阵层上。
  13. 根据权利要求1所述的显示装置，其中，所述复合黑色矩阵层的厚度小于10μm。
  14. 根据权利要求11所述的显示装置，其中，所述黑色矩阵层的厚度小于2μm，所述反光层的厚度范围为2-8μm。
  15. 根据权利要求12所述的显示装置，其中，所述黑色矩阵层的厚度小于2μm，所述反光层的厚度范围为2-8μm。
  16. 根据权利要求1所述的显示装置，其中，所述反光层设置于所述基板层上，所述黑色矩阵层设置于所述反光层上。
  17. 根据权利要求15所述的显示装置，其中，所述反光层的厚度大于所述发光层的厚度。
  18. 根据权利要求1所述的显示装置，其中，所述反光层的构成材料采用金属或有机材料。
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