WO2021106717A1 - Procédé de commande de système de traitement de substrat, et système de traitement de substrat - Google Patents

Procédé de commande de système de traitement de substrat, et système de traitement de substrat Download PDF

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Publication number
WO2021106717A1
WO2021106717A1 PCT/JP2020/043027 JP2020043027W WO2021106717A1 WO 2021106717 A1 WO2021106717 A1 WO 2021106717A1 JP 2020043027 W JP2020043027 W JP 2020043027W WO 2021106717 A1 WO2021106717 A1 WO 2021106717A1
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Prior art keywords
substrate
wafer
processing system
sensor module
radius
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PCT/JP2020/043027
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English (en)
Japanese (ja)
Inventor
亮太 後藤
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東京エレクトロン株式会社
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Publication of WO2021106717A1 publication Critical patent/WO2021106717A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Definitions

  • This disclosure relates to a control method of a substrate processing system and a substrate processing system.
  • a transfer arm that conveys a wafer to a processing chamber that performs a desired process such as a film forming process on the wafer is known.
  • the wafer is provided with notches such as an orientation flat and a notch for indicating the direction of the crystal axis.
  • Patent Document 1 discloses a position recognition device that calculates the center position of a semiconductor wafer from the detection data of a detection means including a plurality of sensors capable of detecting the position of the edge of the semiconductor wafer. Further, in Patent Document 2, the deviation of the gripping position of the substrate is acquired based on the signal indicating the passing timing of the substrate, and the conveying operation of the conveying mechanism is corrected based on the acquired deviation of the gripping position of the substrate to obtain the substrate.
  • a transport system for transporting to a target position is disclosed.
  • the position recognition device disclosed in Patent Document 1 uses a predetermined radius of the wafer to determine whether or not the sensor has detected the orientation flat formed on the wafer, and calculates the center position of the wafer. doing.
  • the radius of the wafer may change depending on the allowable range of dimensions, expansion due to heat during the process, tension in the film forming process, and the like. Therefore, with the method disclosed in Patent Document 1, there is a possibility that the sensor that detects the notch portion of the wafer cannot be suitably specified. Similarly, even with the method disclosed in Patent Document 2, when the radius of the wafer changes, there is a possibility that the deviation of the gripping position cannot be preferably obtained.
  • One aspect of the present disclosure provides a control method for a substrate processing system and a substrate processing system capable of identifying a detection point at which a notch is detected.
  • the control method of the substrate processing system includes a first chamber having a first mounting portion, a second chamber having a second mounting portion, and a substrate from the first chamber to the second chamber.
  • a first sensor module provided in a transport path from the first chamber to the second chamber and having at least three sensors for detecting the position of the outer edge of the substrate, and a control unit.
  • a method for controlling a substrate processing system which comprises a step of transporting the substrate and detecting the position of the outer edge of the substrate by the first sensor module, and a detection point of the first sensor module formed on the substrate. It has a step of determining whether or not it is detected in the cutout portion.
  • a control method of a substrate processing system and a substrate processing system capable of identifying a detection point at which a notch is detected are provided.
  • the plan view which shows the structure of an example of the substrate processing system which concerns on one Embodiment.
  • the flowchart which shows an example of the process of calculating the radius of a wafer.
  • An example of a table An example of a table.
  • the flowchart which shows an example of the process of calculating the center position of a wafer.
  • the plan view which shows the structure of an example of the substrate processing system which concerns on another embodiment.
  • FIG. 1 is a plan view showing a configuration of an example of a substrate processing system according to an embodiment.
  • the wafer W is shown with dot hatching.
  • the substrate processing system shown in FIG. 1 is a cluster structure (multi-chamber type) system.
  • the board processing system includes processing chambers PM (Process Module) 1 to 6, transfer chamber VTM (Vacuum Transfer Module), load lock chamber LLM (Load Lock Module), loader module LM (Loader Module) 1 to 2, and load port LP ( LoadPort) 1 to 4 and a control unit 100 are provided.
  • PM Process Module
  • VTM Vauum Transfer Module
  • load lock chamber LLM Load Lock Module
  • loader module LM Loader Module
  • load port LP LoadPort
  • the processing chambers PMs 1 to 6 are depressurized to a predetermined vacuum atmosphere, and inside the processing chambers PM1 to PM6, a desired process (etching process, film forming process, cleaning process, ashing process) is applied to the semiconductor wafer W (hereinafter, also referred to as “wafer W”). Etc.).
  • the processing chambers PM1 to PM6 are arranged adjacent to the transport chamber VTM.
  • the processing chambers PM1 to 6 and the transport chamber VTM communicate with each other by opening and closing the gate valves GV1 to 6.
  • the processing chamber PM1 has a mounting portion 111 on which the wafer W is mounted.
  • each of the processing chambers PM2 to PM2 has a mounting portion on which the wafer W is mounted.
  • the operation of each unit for processing in the processing chambers PM1 to PM6 is controlled by the control unit 100.
  • the transport chamber VTM is decompressed to a predetermined vacuum atmosphere. Further, inside the transfer chamber VTM, a transfer device ARM1 for transporting the wafer W is provided inside the transfer chamber VTM.
  • the transfer device ARM1 carries in and out the wafer W between the processing chambers PM1 to 6 and the transfer chamber VTM according to the opening and closing of the gate valves GV1 to 6. Further, the transfer device ARM1 carries in and out the wafer W between the load lock chamber LLM and the transfer chamber VTM according to the opening and closing of the gate valve GV7.
  • the operation of the transfer device ARM1 and the opening / closing of the gate valves GV1 to 7 are controlled by the control unit 100.
  • the transport device ARM1 is configured as an articulated arm including, for example, a base, a first link, a second link, and an end effector 124.
  • the end effector 124 of the transport device ARM1 is illustrated, and other illustrations are omitted.
  • a holding portion for holding the wafer W is provided on the tip end side of the end effector 124.
  • the actuator that drives the transport device ARM1 is controlled by the control unit 100.
  • sensor modules S1 to 7 for detecting the wafer W are provided inside the transport chamber VTM.
  • the sensor module S1 determines whether or not the wafer W is held when the transfer device ARM1 carries the wafer W into the processing chamber PM1 or when the wafer W is carried out from the processing chamber PM1, and the eccentricity of the held wafer W. Detect the amount.
  • the detection method of the sensor module S1 will be described later with reference to FIG. 2 and the like.
  • the sensor modules S2 to 6 determine whether or not the wafer W is held when the transfer device ARM1 carries the wafer W into the processing chambers PM2 to 6 or when the wafer W is carried out from the processing chambers PM2 to 6. , The amount of eccentricity of the held wafer W is detected.
  • the sensor module S7 determines whether or not the wafer W is held when the transfer device ARM1 carries the wafer W into the load lock chamber LLM or when the wafer W is carried out from the load lock chamber LLM, and the held wafer W. Detects the amount of eccentricity.
  • the detection method of the sensor module S7 will be described later with reference to FIG. 3 and the like.
  • an optical passage sensor can be used for the sensor modules S1 to 7, for example.
  • the detected values of the sensor modules S1 to 7 are input to the control unit 100.
  • the load lock chamber LLM is provided between the transport chamber VTM and the loader modules LM1 and LM2.
  • the load lock chamber LLM can switch between an air atmosphere and a vacuum atmosphere.
  • the load lock chamber LLM and the vacuum atmosphere transfer chamber VTM communicate with each other by opening and closing the gate valve GV7.
  • the load lock chamber LLM and the loader module LM1 in the air atmosphere communicate with each other by opening and closing the gate valve GV8.
  • the load lock chamber LLM and the loader module LM2 in the air atmosphere communicate with each other by opening and closing the gate valve GV9.
  • the load lock chamber LLM has a mounting portion 131 on which the wafer W is mounted. Switching between the vacuum atmosphere and the atmospheric atmosphere in the load lock chamber LLM is controlled by the control unit 100.
  • the loader modules LM1 and LM2 have an atmospheric atmosphere, for example, a downflow of clean air is formed. Further, inside the loader module LM1, a transport device ARM2 for transporting the wafer W is provided inside the loader module LM1. The transfer device ARM2 carries in and out the wafer W between the load lock chamber LLM and the loader module LM1 according to the opening and closing of the gate valve GV8. Similarly, inside the loader module LM2, a transfer device ARM3 for transporting the wafer W is provided inside the loader module LM2. The transfer device ARM3 carries in and out the wafer W between the load lock chamber LLM and the loader module LM2 according to the opening and closing of the gate valve GV9. The operation of the transfer devices ARM2 and 3 and the opening and closing of the gate valves GV8 and 9 are controlled by the control unit 100.
  • the transport device ARM2 is configured as an articulated arm including, for example, a base, a first link, a second link, and an end effector 144.
  • the end effector 144 of the transport device ARM2 is illustrated, and other illustrations are omitted.
  • a holding portion for holding the wafer W is provided on the tip end side of the end effector 144.
  • the actuator that drives the transport device ARM2 is controlled by the control unit 100.
  • the transport device ARM3 is configured as an articulated arm similar to the transport device ARM2.
  • Load ports LP1 and LP1 and 2 are provided on the wall surface of the loader module LM1. Further, load ports LP3 and 4 are provided on the wall surface of the loader module LM2.
  • a carrier C containing a wafer W or an empty carrier C is attached to the load ports LP1 to LP4.
  • the carrier C for example, FOUP (Front Opening Unified Pod) or the like can be used.
  • the transfer device ARM2 can take out the wafer W housed in the load ports LP1 and LP2 by holding it in the holding portion of the transfer device ARM2. Further, the wafer W held in the holding portion can be accommodated in the load ports LP1 and LP1 and 2. Similarly, the transfer device ARM3 can hold the wafer W housed in the load ports LP3 and 4 by the holding portion of the transfer device ARM3 and take it out. Further, the wafer W held in the holding portion can be accommodated in the load ports LP3 and 4.
  • the control unit 100 has a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), and an HDD (Hard Disk Drive).
  • the control unit 100 may have other storage areas such as SSD (Solid State Drive) as well as HDD.
  • a recipe in which process procedures, process conditions, and transfer conditions are set is stored in a storage area such as an HDD or RAM.
  • the CPU controls the processing of the wafer W in each processing chamber PM according to the recipe, and controls the transfer of the wafer W.
  • the HDD or RAM may store a program for executing the processing of the wafer W and the transfer of the wafer W in each processing chamber PM.
  • the program may be stored in a storage medium and provided, or may be provided from an external device via a network.
  • the control unit 100 opens the gate valve GV8.
  • the control unit 100 controls the transfer device ARM2 to take out the wafer W from the carrier C of the load port LP1 and place it on the mounting unit 131 of the load lock chamber LLM.
  • the control unit 100 closes the gate valve GV8.
  • the control unit 100 controls the exhaust device (not shown) of the load lock chamber LLM to exhaust the air in the room, and switches the load lock chamber LLM from the atmospheric atmosphere to the vacuum atmosphere.
  • the control unit 100 opens the gate valve GV7.
  • the control unit 100 controls the transport device ARM1 to insert the end effector 124 into the load lock chamber LLM up to a preset teaching point, and holds the wafer W mounted on the mounting portion 131 of the load lock chamber LLM. Then, it is transported to the transport chamber VTM.
  • the transport chamber VTM As will be described later with reference to FIG. 4, when the wafer W is transported from the load lock chamber LLM to the transport chamber VTM, the radius of the wafer W is calculated using the sensor module S7.
  • the control unit 100 closes the gate valve GV7.
  • the control unit 100 opens the gate valve GV1.
  • the control unit 100 controls the transfer device ARM1 to insert the end effector 124 into the processing chamber PM1 up to a preset teaching point, and mounts the holding wafer W on the mounting portion 111 of the processing chamber PM1. ..
  • the center position of the wafer W is calculated using the sensor module S1.
  • the control unit 100 controls the transfer device ARM1 and adjusts the position of the wafer W based on the calculated center position of the wafer W.
  • the control unit 100 closes the gate valve GV1.
  • the control unit 100 controls the processing chamber PM1 to perform a desired processing on the wafer W.
  • the control unit 100 opens the gate valve GV1.
  • the control unit 100 controls the transfer device ARM1 to insert the end effector 124 into the processing chamber PM1 up to a preset teaching point, and holds the wafer W mounted on the mounting portion 111 of the processing chamber PM1. , Transport to the transport chamber VTM.
  • the control unit 100 closes the gate valve GV1.
  • the control unit 100 opens the gate valve GV7.
  • the control unit 100 controls the transport device ARM1 to insert the end effector 124 into the load lock chamber LLM up to a preset teaching point, and mounts the holding wafer W on the mounting portion 131 of the load lock chamber LLM. Place.
  • the control unit 100 closes the gate valve GV7.
  • the control unit 100 controls an intake device (not shown) of the load lock chamber LLM to supply, for example, clean air to the room, and switches the load lock chamber LLM from a vacuum atmosphere to an air atmosphere.
  • the control unit 100 opens the gate valve GV9.
  • the control unit 100 controls the transfer device ARM3 to take out the wafer W mounted on the mounting unit 131 of the load lock chamber LLM and accommodates the wafer W in the carrier C of the load port LP3.
  • the control unit 100 closes the gate valve GV9.
  • the wafer W may be similarly transported / transported to the processing chambers PM2 to PM1.
  • FIG. 2 is an example of a schematic diagram illustrating the configuration of the sensor module S1 and the detection procedure of the sensor module S1.
  • the sensor module S1 has two sensors 11 and 12.
  • the sensor module S1 having the two sensors 11 and 12 is also referred to as a “two sensor type sensor module”.
  • the sensors 11 and 12 are, for example, optical pass sensors, and are wafers W that pass above when the wafer W is transported from the transport chamber VTM to the processing chamber PM1 or from the processing chamber PM1 to the transport chamber VTM. Detect the edge of.
  • the sensors 11 and 12 are arranged at predetermined intervals. Further, the sensors 11 and 12 may be arranged on the opposite side of the reference line 10. Further, the sensors 11 and 12 may be arranged symmetrically with respect to the reference line 10.
  • the reference line 10 is, for example, a line that passes through the center of the mounting portion 111 of the processing chamber PM1 and extends in the transfer direction of the wafer W by the transfer device ARM1.
  • the position of the detection point 21 is detected by the sensor 11 by transporting the wafer W upward along the reference line 10. Further, the position of the detection point 22 is detected by the sensor 12. By further transporting the wafer W, the position of the detection point 23 is detected by the sensor 11. Further, the position of the detection point 24 is detected by the sensor 12.
  • the detected value of the sensor module S1 is input to the control unit 100.
  • the control unit 100 calculates the center position of the wafer W based on the posture of the transfer device ARM1 (position and speed of the end effector 124) and the detected value of the sensor module S1.
  • FIG. 3 is an example of a schematic diagram illustrating the configuration of the sensor module S7 and the detection procedure of the sensor module S7.
  • the sensor module S7 has three sensors 31 to 33.
  • the sensor module S7 having three sensors 31 to 33 is also referred to as a “three sensor type sensor module”.
  • the sensors 31 to 33 are, for example, optical pass sensors, which pass above when the wafer W is transported from the transport chamber VTM to the load lock chamber LLM, or from the load lock chamber LLM to the transport chamber VTM. The edge of the wafer W is detected.
  • the sensors 31 to 33 are arranged at predetermined intervals. Further, the sensors 31 and 32 may be arranged on the opposite side of the reference line 30.
  • the sensors 31 and 32 may be arranged symmetrically with respect to the reference line 30.
  • the reference line 30 is, for example, a line that passes through the center of the mounting portion 131 of the load lock chamber LLM and extends in the transfer direction of the wafer W by the transfer device ARM1.
  • the senor 33 is arranged at a distance equal to or larger than the opening width of the notch 50 from the sensor 32.
  • the sensor 33 is shown as being provided between the sensor 31 and the sensor 32, but the present invention is not limited to this, and the sensor 33 is provided outside between the sensor 31 and the sensor 32. You may be.
  • the position of the detection point 41 is detected by the sensor 31 by transporting the wafer W upward along the reference line 30. Further, the position of the detection point 42 is detected by the sensor 32. Further, the position of the detection point 45 is detected by the sensor 33. By further transporting the wafer W, the position of the detection point 43 is detected by the sensor 31. Further, the position of the detection point 44 is detected by the sensor 32. Further, the position of the detection point 46 is detected by the sensor 33.
  • the detected value of the sensor module S7 is input to the control unit 100.
  • the control unit 100 calculates the radius of the wafer W and the center position of the wafer W based on the posture of the transport device ARM1 (position and speed of the end effector 124) and the detected value of the sensor module S7.
  • the control unit 100 estimates the radius of the wafer W and the center position of the wafer W by imagining a triangle from the detection point and obtaining the circumscribed circle of the triangle.
  • the wafer W is provided with a notch 50 for indicating the direction of the crystal axis.
  • the sensor 11 to 12, 31 to 33
  • detects an edge detection point 22 in the example of FIG. 2 and detection point 42 in the example of FIG. 3
  • the detection point is determined.
  • the center position of the wafer W estimated from the including triangle (for example, in the example of FIG. 2, the triangle consisting of detection points 21, 22, 23, and in the example of FIG. 3, the triangle consisting of detection points 41, 42, 43) is determined. There is a risk of deviating from the actual center position of the wafer W.
  • FIG. 4 is a flowchart showing an example of a process of calculating the radius of the wafer W based on the detected value of the sensor module S7.
  • step S101 the control unit 100 acquires 6 detection points 41 to 46 (see FIG. 3) from the sensor module S7. Specifically, the control unit 100 controls the transfer device ARM1 to transfer the wafer W from the load lock chamber LLM to the transfer chamber VTM. At this time, the detection points 41 to 46 are detected by the wafer W passing over the sensor module S7.
  • step S102 the control unit 100 forms a plurality of triangles from the six detection points 41 to 46.
  • at least four triangles are formed.
  • the formed four triangles are also referred to as triangles T1 to T4.
  • step S103 the control unit 100 calculates the circumscribed circle radius and the circumscribed circle center of each of the triangles T1 to T4 formed in step S102, respectively.
  • step S104 the control unit 100 calculates the average value of the circumscribed circle radii from the circumscribed circle radii of the triangles T1 to T4 calculated in step S103.
  • step S105 the control unit 100 determines whether or not the detection points 41 to 46 are detected at the positions where the notches 50 are formed.
  • the mounting accuracy is a value indicating how much displacement is allowed from the normal position when the wafer W is mounted on the mounting portion 111.
  • the mounting accuracy is a value indicating how much displacement is allowed from the normal position when the wafer W is mounted on the mounting portion 111.
  • step S108 When the detection points 41 to 46 are detected at the positions where the notches 50 are formed (S105 ⁇ Yes), the process of the control unit 100 proceeds to step S108.
  • the detection points 41 to 46 are not detected at the position where the notch 50 is formed (S105 / No), the process of the control unit 100 proceeds to step S106.
  • step S106 the control unit 100 determines that the detection points 41 to 46 are not detected at the position where the notch 50 is formed.
  • step S107 the control unit 100 calculates the radius of the wafer W.
  • the radius of the wafer W is calculated based on the detection points 41 to 46 (or the points selected from the detection points 41 to 46). For example, the average of the circumscribed circle radii of each triangle T1 to T4 may be used as the radius of the wafer W. One of the circumscribed circle radii of the triangles T1 to T4 may be selected as the radius of the wafer W. Then, the process of the control unit 100 is terminated.
  • step S108 the control unit 100 compares the magnitude relationship between the circumscribed circle radii of the triangles T1 to T4 calculated in step S103 and the average value of the circumscribed circle radii calculated in step S104, and determines the determination result pattern.
  • the case where the circumscribed circle radius is larger than the average value is indicated by " ⁇ ”
  • the case where the circumscribed circle radius is smaller than the average value is indicated by "x”.
  • the circumscribed circle radius of triangle T1 is larger than the average value
  • the circumscribed circle radius of triangle T2 is smaller than the average value
  • the circumscribed circle radius of triangle T3 is larger than the average value
  • the circumscribed circle radius of triangle T4 is smaller than the average value.
  • step S109 the control unit 100 determines from the table stored in advance in the control unit 100 that it matches the determination result pattern generated in step S108.
  • FIG. 5 is an example of a table.
  • the determination result patterns of the triangles T1 to T4 when the detection points 41 to 46 are the detection points at the positions where the notches 50 are formed are stored in association with each other. For example, when the detection point 41 is the detection point at the position where the notch 50 is formed, the determination result pattern of " ⁇ ⁇ ⁇ ⁇ " is stored. When the detection point 42 is the detection point at the position where the notch 50 is formed, the determination result pattern of "XXXX" is stored. When the detection point 43 is the detection point at the position where the notch 50 is formed, the determination result pattern of "XXXXX" is stored.
  • the triangles T1 to T4 are set so that the determination result pattern corresponding to each detection point 41 to 46 is unique.
  • the table uses one of the triangles. It may have been created.
  • a triangle having a narrow shape for example, a triangle consisting of detection points 42, 45 and other detection points, a triangle consisting of detection points 44, 46 and other detection points, etc.
  • the three detection points can be separated from each other, and the error of the calculated circumscribed circle radius and the center of the circumscribed circle can be reduced.
  • step S108 when the determination result pattern of " ⁇ ⁇ ⁇ ⁇ " is generated in step S108, the detection point 41 is determined from the table as matching the determination result pattern in step S109, and the process of the control unit 100 proceeds to step S110. .. If the determination result pattern generated in step S108 does not match any of the tables, the process of the control unit 100 proceeds to step S110 as not applicable.
  • step S110 the control unit 100 determines whether or not there is a determination result pattern corresponding to the table. If there is no determination result pattern corresponding to the table (S110 / No), the process of the control unit 100 proceeds to step S106, and it is determined that the detection points 41 to 46 are not detected at the positions where the notches 50 are formed. When there is a determination result pattern corresponding to the table (S110 ⁇ Yes), the process of the control unit 100 proceeds to step S111, and the detection point determined in step S109 (here, the detection point 41) is the position where the notch 50 is formed. Identify as.
  • the radius of the wafer W is calculated excluding the detection point at the position where the notch 50 specified in step S111 is formed.
  • the radius of the wafer W is calculated based on the detection points 42 to 46 (or the points selected from the detection points 42 to 46). For example, the average of the circumscribed circle radii of each triangle not including the detection point 41 may be used as the radius of the wafer W. Of the circumscribed circle radii of each triangle that does not include the detection point 41, any circumscribed circle radius may be selected as the radius of the wafer W. Then, the process of the control unit 100 is terminated.
  • FIG. 6 is a flowchart showing an example of a process of calculating the center position of the wafer W based on the detected value of the sensor module S1.
  • step S201 the control unit 100 acquires four detection points 21 to 24 (see FIG. 2) from the sensor module S1. Specifically, the control unit 100 controls the transfer device ARM1 to transfer the wafer W from the transfer chamber VTM to the processing chamber PM1. At this time, the detection points 21 to 24 are detected by the wafer W passing over the sensor module S1.
  • step S202 the control unit 100 forms a plurality of triangles from the four detection points 21 to 24. Here, four triangles are formed.
  • step S203 the control unit 100 calculates the circumscribed circle radius and the circumscribed circle center of each triangle formed in step S202, respectively.
  • step S204 the control unit 100 determines whether or not the variation in the center of the circumscribed circle of each triangle calculated in step S203 falls within the range of mounting accuracy.
  • the process of the control unit 100 proceeds to step S205. If the variation at the center of the circumscribed circle does not fall within the range of mounting accuracy (S204 / No), the process of the control unit 100 proceeds to step S207.
  • step S205 the control unit 100 determines that the detection points 21 to 24 are not detected at the position where the notch 50 is formed.
  • step S206 the control unit 100 calculates the radius of the wafer W and the center position of the wafer W.
  • the center position of the wafer W is calculated based on the detection points 21 to 24 (or points selected from the detection points 21 to 24).
  • the average position of the center of the circumscribed circle of each triangle may be the center position of the wafer W.
  • the centers of the circumscribed circles of each triangle one of the centers of the circumscribed circles may be selected as the center position of the wafer W.
  • the process of the control unit 100 is terminated.
  • step S207 the control unit 100 determines whether or not one of the circumscribed circle radii of each triangle can be regarded as having the same value as the radius of the wafer W calculated by the process shown in FIG.
  • the equivalent value means a value that can be regarded as the same value in terms of calculation accuracy.
  • the process of the control unit 100 proceeds to step S208. If there is not one circumscribed circle that can be regarded as having the same value as the radius of the wafer W (S207 / No), the process of the control unit 100 proceeds to step S210. Even if the radius of the wafer W to be referred to cannot be calculated, 100 of the control unit is determined to be step S207 / No, and the process of 100 of the control unit proceeds to step S210.
  • step S208 the control unit 100 identifies the detection points 21 to 24 that are not used in the circumscribed circle that can be regarded as having the same value as the radius of the wafer W as the detection points at the positions where the notches 50 are formed. To do.
  • step S209 the center position of the wafer W is calculated excluding the detection point at the position where the notch 50 specified in step S208 is formed. That is, the center of the circumscribed circle, which can be regarded as the same value as the radius of the wafer W, is calculated as the center position of the wafer W. Then, the process of the control unit 100 is terminated.
  • step S210 the control unit 100 causes the wafer W to exit the processing chamber PM1, offset, and then enter the processing chamber PM1 again.
  • the offset amount here is equal to or greater than the opening width of the notch 50. This makes it possible to prevent the notch 50 from passing over the sensors 11 and 12 again when the wafer W is re-entered into the processing chamber PM1. Then, the process of the control unit 100 returns to step S201. Thereby, the position of the outer edge of the wafer W can be detected at the position where the notch 50 is not formed.
  • the mounting accuracy is improved in the system in which the wafer W is transferred between the load lock chamber LLM and each of the processing chambers PM1 to 6 via the transport chamber VTM. be able to.
  • a method of detecting the center position of the wafer W in the substrate processing system according to the reference example will be described.
  • a triangle is formed from four detection points, and it is determined whether or not the radius R of the outer peripheral circle of each triangle is within the radius range of the wafer W given in advance. Then, it is determined that the detection point is at the position where the notch 50 is formed.
  • the radius of the wafer W must allow a certain dimensional difference (for example, 300 ⁇ 0.2 mm), and both the tolerance of the radius of the wafer W and the detection accuracy (mounting accuracy) of the center position of the wafer W are compatible. It was difficult to get it done.
  • the center position of the wafer W can be accurately positioned. It can be obtained, and the mounting accuracy when mounting the wafer W on the mounting portions 111 of the processing chambers PM1 to PM6 can be improved.
  • the wafer W is transported from the load lock chamber LLM to each of the processing chambers PM1 to 6, and the processed wafer W is transported from each of the processing chambers PM1 to 6 to the load lock chamber LLM. ..
  • a 3-sensor type sensor module (see FIG. 3) is used for the sensor module S7 through which each transport path passes in common, and a 2-sensor type sensor module (see FIG. 3) is used for the sensor modules S1 to 6 of each processing chamber PM1 to PM6. 2) can be used, so that the number of sensors can be reduced and the cost of the substrate processing system can be reduced.
  • FIG. 7 is a plan view showing a configuration of an example of a substrate processing system according to another embodiment.
  • the wafer W is shown with dot hatching.
  • the substrate processing system shown in FIG. 7 is a system having a cluster structure similar to the substrate processing system shown in FIG. 1, and has a processing chamber PM1 to 6, a transport chamber VTM, a load lock chamber LLM, a loader module LM1-2, and a load port. It includes LPs 1 to 4 and a control unit 100.
  • the sensor module S1 in the processing chamber PM1 is changed to a 3-sensor type sensor module (see FIG. 3) as compared with the substrate processing system shown in FIG. It's different.
  • the configuration of the sensor module S1 is the same as the configuration of the sensor module S7 shown in FIG. 3, and redundant description will be omitted.
  • serial transfer is performed as shown in the paths 153 to 155 of the wafer W.
  • at least one sensor module (see FIG. 3) of at least three sensor types is arranged in each path 153 to 155 for transporting the wafer W from one chamber to another via the transport chamber VTM. Ru.
  • the wafer W mounted on the mounting portion 131 of the load lock chamber LLM is conveyed to the processing chamber PM1 and placed on the mounting portion 111 of the processing chamber PM1.
  • the radius of the wafer W is calculated based on the flow shown in FIG.
  • the center position of the wafer W is calculated based on the flow shown in FIG.
  • the mounting position of the wafer W is adjusted based on the calculated center position of the wafer W.
  • the wafer W is subjected to the desired first processing.
  • the radius of the wafer W may change due to expansion due to heat during the process, tension in the film forming process, and the like.
  • the wafer W mounted on the mounting portion 111 of the processing chamber PM1 is conveyed to the processing chamber PM2, and the mounting portion of the processing chamber PM2 is transported. Place on.
  • the radius of the wafer W is calculated based on the flow shown in FIG.
  • the center position of the wafer W is calculated based on the flow shown in FIG.
  • the mounting position of the wafer W is adjusted based on the calculated center position of the wafer W.
  • the wafer W is subjected to a desired second processing.
  • the wafer W mounted on the mounting portion of the processing chamber PM2 is conveyed to the load lock chamber LLM and mounted on the mounting portion 131.
  • the radius and the center position of the wafer W are calculated based on the flow shown in FIG.
  • the mounting position of the wafer W is adjusted based on the calculated center position of the wafer W.
  • the center position of the wafer W is accurate. It can be obtained well, and the mounting accuracy when mounting the wafer W on the mounting portion 111 of the processing chamber PM1 can be improved.
  • the substrate processing system even if the radial dimension of the wafer W is changed by performing the desired processing on the wafer W in the processing chamber PM1 in the configuration of serial transfer, the processing has been completed.
  • the center position of the wafer W can be obtained with high accuracy, and the mounting accuracy when the processed wafer W is mounted on the mounting portion 111 of the next processing chamber PM2 can be improved.
  • the sensor modules S3 to 6 are shown as 2-sensor type sensor modules (see FIG. 2), but the sensor modules S3 to 6 also have 3 sensor types in each path of the wafer W. At least one or more sensor modules (see FIG. 3) may be arranged.
  • the radius of the wafer W is calculated when the wafer W passes through the sensor module S7, and the center position of the wafer W is calculated when the wafer W passes through the sensor module S1. , Not limited to this.
  • the radius and the center position of the wafer W may be calculated based on the flow shown in FIG.
  • the control unit 100 calculates the radius of the wafer W and the center position of the wafer W.
  • the radius of the wafer W and the center position of the wafer W are calculated based on the detection points 41 to 46 (or points selected from the detection points 41 to 46).
  • the average position of the center of the circumscribed circle of each triangle T1 to T4 may be the center position of the wafer W.
  • One of the centers of the circumscribed circles of the triangles T1 to T4 may be selected as the center position of the wafer W.
  • the radius of the wafer W and the wafer W are excluded from the detection point (here, the detection point 41) at the position where the notch 50 specified in step S111 is formed. Calculate the center position of. That is, the radius of the wafer W and the center position of the wafer W are calculated based on the detection points 42 to 46 (or points selected from the detection points 42 to 46).
  • the average position of the center of the circumscribed circle of each triangle that does not include the detection point 41 may be the center position of the wafer W.
  • the centers of the circumscribed circles of each triangle that does not include the detection point 41 one of the centers of the circumscribed circles may be selected as the center position of the wafer W.
  • the sensor module S1 may be a 3-sensor type sensor module (see FIG. 3), and the sensor modules S2 and S7 may be a 2-sensor type sensor module (see FIG. 2).
  • the radius and center position of the wafer W can be accurately obtained by the sensor module S1 provided in the path 153, and the mounting accuracy when the wafer W is mounted on the mounting portion 111 of the processing chamber PM1 is improved. Can be done. Further, the radius of the wafer W can be accurately obtained by the sensor module S1 provided in the path 154, and the center position of the wafer W can be accurately obtained by the sensor module S2 provided in the path 154.
  • the mounting accuracy when mounting the wafer W on the unit 111 can be improved.
  • the two-sensor type sensor modules S2 and S7 will be arranged on the path 155.
  • the center position of the wafer W is calculated based on the flow shown in FIG. 6 when the wafer W passes through the sensor module S7.
  • higher mounting accuracy is not required as when mounting the wafer W on the mounting portions 111 of the processing chambers PM1 and PM1 and PM1 and 2. That is, in the flow shown in FIG. 6, the allowable mounting accuracy range of step S204 is increased.
  • step S204 when the variation at the center of the circumscribed circle does not fall within the range of mounting accuracy (S204 / No), the process of the control unit 100 proceeds to step S207.
  • 100 of the control unit is determined to be step S207 / No, and the process of 100 of the control unit proceeds to step S210.
  • FIG. 8 is a plan view showing the configuration of an example of the substrate processing system according to still another embodiment.
  • the wafer W is shown with dot hatching.
  • the substrate processing system shown in FIG. 8 is a system having a cluster structure similar to the substrate processing system shown in FIG. 1, and has a processing chamber PM1 to 6, a transport chamber VTM, a load lock chamber LLM, a loader module LM1-2, and a load port. It includes LPs 1 to 4 and a control unit 100.
  • the processing chamber PM1 has mounting portions 111 to 114 on which a total of four wafers W are mounted in a 2 ⁇ 2 matrix in a plan view.
  • the processing chambers PMs 2 to 6 each have a mounting portion on which four wafers W are mounted.
  • the load lock chamber LLM has mounting portions 131 to 134 on which a total of four wafers W are mounted in a 2 ⁇ 2 matrix in a plan view. Further, the arrangement of the mounting portions 111 to 114 of the processing chambers PM1 to 6 and the arrangement of the mounting portions 131 to 134 of the load lock chamber LLM are the same.
  • the transport device ARM1 is configured as an articulated arm including a base 121, a first link 122, a second link 123, and an end effector 124.
  • One end side of the first link 122 is rotatably attached to the base 121 with the vertical direction as a rotation axis.
  • the base 121 can move the first link 122 up and down in the vertical direction.
  • One end side of the second link 123 is rotatably attached to the other end side of the first link 122 with the vertical direction as a rotation axis.
  • the base end side of the end effector 124 is rotatably attached to the other end side of the second link 123 with the vertical direction as a rotation axis.
  • a plurality of holding portions for holding the wafer W are provided on the tip end side of the end effector 124.
  • the actuator that drives the elevating and lowering of the first link 122, the joint between the base 121 and the first link 122, the joint between the first link 122 and the second link 123, and the joint between the second link 123 and the end effector 124 is a control unit. Controlled by 100.
  • the end effector 124 is formed in a fork shape whose tip side branches, and has a base end portion 240 and two blades (fork branch portions) 241,242 extending from the base end portion 240.
  • the blades 241,242 extend in the same direction from the base end portion 240 and are formed at the same height.
  • the blade 241 has holding portions 243 and 244 that hold a plurality of wafers W along the longitudinal direction of the blade 241.
  • the blade 242 has holding portions 245 and 246 that hold a plurality of wafers W along the longitudinal direction of the blade 242. In this way, the four wafers W held by the end effector 124 are held at the same height (on the same plane).
  • Two sets of sensor modules S1 to S7 are provided so as to correspond to the two blades 241,242.
  • the sensor module S7 is a sensor module having three sensors 31 to 33.
  • the sensor modules S1 to 6 are also of the three sensor type so that at least one sensor module (see FIG. 3) of the three sensor type is arranged in each path of the wafer W.
  • a sensor module (see FIG. 3) may be arranged.
  • Wafers W mounted on the mounting portions 131 to 134 of the load lock chamber LLM are conveyed to the processing chamber PM1 and placed on the mounting portions 111 to 114 of the processing chamber PM1.
  • the radius of each wafer W is calculated based on the flow shown in FIG.
  • the center position of each wafer W is calculated based on the flow shown in FIG. Based on the calculated center position of each wafer W, the transfer device ARM1 is controlled to adjust the mounting position of the wafer W.
  • the flow shown in FIG. 4 is processed for each wafer W.
  • the flow shown in FIG. 6 is basically processed for each wafer W.
  • the center position is calculated (S206 or S209) in the first to third wafers W of the four wafers W and S207 / No is determined in the fourth wafer W
  • the wafer W is offset. Reinsert.
  • the center position is calculated on the fourth wafer W (S206 or S209).
  • the positional relationship between the notch 50 of the first wafer W and the sensor module S1 also changes, so that the first wafer W may be determined to be S207 / No.
  • offsetting and re-entry may be repeated again until the center positions of the four wafers W are calculated. Further, the center position of the first wafer W determined to be S207 / No due to the offset may be the center position calculated before the offset. As a result, the number of redoes can be reduced.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Procédé de commande d'un système de traitement de substrat et système de traitement de substrat avec lesquels il est possible d'identifier un point de détection auquel une partie découpée a été détectée. Le procédé commande un système de traitement de substrat pourvu : d'une première chambre ayant une première partie de montage ; d'une seconde chambre ayant une seconde partie de montage ; d'un dispositif de transfert pour transférer un substrat de la première chambre à la seconde chambre ; d'un premier module de capteur disposé dans un itinéraire de transfert de la première chambre à la seconde chambre et ayant au moins trois capteurs pour détecter la position d'un bord extérieur du substrat ; et d'une unité de commande. Le procédé comprend une étape consistant à transférer le substrat et à détecter la position du bord extérieur du substrat au moyen du premier module de capteur, et une étape consistant à déterminer si le point de détection par le premier module de capteur a été détecté au niveau d'une partie découpée formée dans le substrat.
PCT/JP2020/043027 2019-11-28 2020-11-18 Procédé de commande de système de traitement de substrat, et système de traitement de substrat WO2021106717A1 (fr)

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JP2019215253 2019-11-28

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009088398A (ja) * 2007-10-02 2009-04-23 Olympus Corp 円盤体の求心方法
JP2012222195A (ja) * 2011-04-11 2012-11-12 Tokyo Electron Ltd 基板搬送方法、基板搬送装置、及び塗布現像装置
JP2013161915A (ja) * 2012-02-03 2013-08-19 Tokyo Electron Ltd 基板搬送装置、基板搬送方法及び記憶媒体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009088398A (ja) * 2007-10-02 2009-04-23 Olympus Corp 円盤体の求心方法
JP2012222195A (ja) * 2011-04-11 2012-11-12 Tokyo Electron Ltd 基板搬送方法、基板搬送装置、及び塗布現像装置
JP2013161915A (ja) * 2012-02-03 2013-08-19 Tokyo Electron Ltd 基板搬送装置、基板搬送方法及び記憶媒体

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