WO2021079677A1 - 封止用樹脂組成物、及び半導体装置 - Google Patents

封止用樹脂組成物、及び半導体装置 Download PDF

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Publication number
WO2021079677A1
WO2021079677A1 PCT/JP2020/035983 JP2020035983W WO2021079677A1 WO 2021079677 A1 WO2021079677 A1 WO 2021079677A1 JP 2020035983 W JP2020035983 W JP 2020035983W WO 2021079677 A1 WO2021079677 A1 WO 2021079677A1
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silica
resin composition
particle size
sealing resin
sealing
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PCT/JP2020/035983
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English (en)
French (fr)
Japanese (ja)
Inventor
敦 木佐貫
明日美 伊藤
孝憲 小西
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パナソニックＩｐマネジメント株式会社
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Priority to CN202080073411.7A priority Critical patent/CN114585684A/zh
Priority to JP2021554180A priority patent/JPWO2021079677A1/ja
Publication of WO2021079677A1 publication Critical patent/WO2021079677A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/014—Additives containing two or more different additives of the same subgroup in C08K
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/20—Applications use in electrical or conductive gadgets
    • C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts

Definitions

  • the present disclosure relates to a sealing resin composition and a semiconductor device, and more specifically, is prepared from a sealing resin composition for sealing an electronic component such as a semiconductor element, and the sealing resin composition.
  • the present invention relates to a semiconductor device including a sealing material.
  • a resin composition is injected between the semiconductor chip and a bump electrode and the resin composition is cured to form a base material. Sealing between the semiconductor chip and the chip is performed.
  • a sealing epoxy resin composition containing a liquid epoxy resin, a curing agent containing a liquid aromatic amine, rubber particles, and an inorganic filler can be used to seal an element in an electronic component device. Proposed.
  • spherical silica spherical silica
  • the average particle size of the spherical silica is preferably 1 to 20 ⁇ m.
  • An object of the present disclosure is to provide a sealing resin composition capable of having good fluidity and easily sufficiently sealing gaps, and a semiconductor device including a cured product of the sealing resin composition. There is.
  • the sealing resin composition according to one aspect of the present disclosure contains a curable component (A) and a filler (B).
  • the filler (B) contains a first silica (B1) and a second silica (B2).
  • the average particle size of the first silica (B1) is 0.1 ⁇ m or more and 1.5 ⁇ m or less, and the standard deviation in the particle size distribution of the first silica (B1) is 0.01 or more and less than 1.0.
  • the average particle size of the second silica (B2) is more than 10% and 50% or less of the average particle size of the first silica (B1), and is a standard in the particle size distribution of the second silica (B2).
  • the deviation is 0.01 or more and less than 1.0.
  • the mass ratio of the second silica (B2) to the total amount of the filler (B) is 5% by mass or more and 40% by mass or less.
  • the semiconductor device includes a base material, a semiconductor chip mounted on the base material, and a sealing material for sealing a gap between the base material and the semiconductor chip, and the sealing material is provided.
  • the stopping material is made of a cured product of the sealing resin composition.
  • FIG. 1 is a schematic cross-sectional view showing a semiconductor device according to an embodiment of the present disclosure.
  • the resin composition for encapsulation contains a filler of a single particle group having a relatively small average particle size and a small standard deviation, the chix property of the resin composition is likely to be lowered, and therefore the dilatancy is improved.
  • Cheap it is difficult to maintain the fluidity of the resin composition, and when an attempt is made to seal the gap between the base material and the semiconductor chip with this resin composition, the resin composition flows to the outside of the object to be sealed. It was difficult to sufficiently seal the gaps, for example, it became easy to flow, or it became difficult to flow to fine gaps, resulting in unfilling.
  • the resin composition has good fluidity.
  • Patent Document 1 Japanese Unexamined Patent Publication No. 2010-189664
  • the sealing epoxy resin composition flows out from the gap between the base material and the semiconductor chip. It may be easy, and it may be difficult to sufficiently seal the gap.
  • the inventors did not excessively reduce or improve the thixophilicity of the sealing resin composition even if they contained particles having a relatively small average particle size and a small standard deviation. In addition, it is difficult to improve the dilatancy, and we have come up with a sealing resin composition that can sufficiently seal the gap between the base material and the semiconductor chip.
  • the sealing resin composition according to the present embodiment contains a curable component (A) and a filler (B).
  • the filler (B) contains a first silica (B1) and a second silica (B2).
  • the average particle size of the first silica (B1) is 0.1 ⁇ m or more and 1.5 ⁇ m or less, and the standard deviation in the particle size distribution of the first silica (B1) is 0.01 or more and less than 1.0.
  • the average particle size of the second silica (B2) is more than 10% and 50% or less of the average particle size of the first silica (B1), and the standard deviation in the particle size distribution of the second silica (B2). Is 0.01 or more and less than 1.0.
  • the silica particles in each of the first silica (B1) and the second silica (B2) among the fillers (B) in the sealing resin composition have a standard deviation of 0.04 or more in the particle size distribution. Since it is 5 or less, the particle size of the silica particles is uniform.
  • the sealing resin composition is relatively free from excessively improving the viscosity. The viscosity can be maintained low and the fluidity can be ensured. Further, the dilatancy can be lowered by containing a plurality of kinds of particles having different average particle diameters having a relatively small standard deviation.
  • the sealing resin composition can have excellent moldability in sealing the gap between the base material and the semiconductor chip.
  • the mass ratio of the second silica (B2) to the total amount of the filler (B) in the sealing resin composition according to the present embodiment is 5% by mass or more and 40% by mass or less, so that it is relatively relatively as described above. Even if it has low fluidity, it can maintain good thixophilicity. As a result, even if the sealing resin composition is filled in the gap between the base material and the semiconductor chip, it does not easily flow out from the gap and can be sufficiently sealed.
  • the “average particle size” in the present disclosure is the volume average diameter.
  • the volume average diameter is calculated from the particle size distribution obtained by measuring with a laser diffraction / scattering method.
  • the particle size distribution can be measured by, for example, a laser diffraction type particle size distribution measuring device, and examples of the laser diffraction type particle size distribution measuring device include the LA-960 series manufactured by HORIBA, Ltd.
  • the "standard deviation in the particle size distribution" in the present disclosure is an index indicating the breadth and narrowness of the particle size distribution. From the standard deviation in the particle size distribution, it can be determined whether or not the particle size of the particles is uniform.
  • the standard deviation in the particle size distribution can be calculated as follows. Similar to the above average particle size (volume average diameter), the standard deviation can be calculated from the particle size data of each particle and the average particle size in the particle size distribution obtained by measuring by the laser diffraction / scattering method.
  • the sealing resin composition according to the present embodiment can be suitably used as a sealing material 4 for sealing between the base material 2 and the semiconductor chip 3 in the semiconductor device 1. ..
  • the sealing resin composition can be suitably used as an underfill material.
  • the sealing resin composition of the present embodiment even if the sealing material is sealed between the base material and the semiconductor chip with a cured product obtained by heating and curing the sealing resin composition, the sealing material and the sealing material are used. Adhesion to copper pillars in the base material or semiconductor chip can be ensured. The relationship between the sealing material and the copper pillars will be described later.
  • the sealing resin composition of the present embodiment contains a curable component (A) and a filler (B) as described above.
  • the components that can be contained in the sealing resin composition will be specifically described.
  • the sealing resin composition of the present embodiment contains a curable component (A).
  • the curable component (A) may be any curable component (A) that can be cured by heat or light.
  • the curable component (A) contains a thermosetting resin. Therefore, the curable component (A) can impart thermosetting property to the sealing resin composition.
  • the sealing resin composition is used for the sealing material 4 produced by injecting the sealing resin composition so as to cover the bump electrode 33 between the base material 2 and the semiconductor chip 3 and then heating and curing the mixture. be able to.
  • the curable component (A) can include, for example, at least one thermosetting resin selected from the group consisting of epoxy resin, maleimide resin, phenol resin, and cyanate resin.
  • the curable component (A) contains an epoxy resin.
  • the epoxy resin is not particularly limited as long as it is a compound having at least one epoxy group in one molecule, but the epoxy resin is specifically, for example, a phenol novolac type epoxy resin, a cresol novolac type epoxy resin, or the like.
  • Polyfunctional epoxy resin such as epoxy resin and alkyl-modified triphenol methane type epoxy resin; triphenylmethane type epoxy resin; tetrakisphenol ethane type epoxy resin; dicyclopentadiene type epoxy resin; stillben type epoxy resin; bisphenol A type epoxy resin , Bisphenol F type epoxy resin and other bisphenol type epoxy resin; biphenyl type epoxy resin; naphthalene type epoxy resin; alicyclic epoxy resin; bisphenol A type brom-containing epoxy resin and other brom-containing epoxy resin; One or more components selected from the group consisting of a glycidylamine type epoxy resin obtained by reacting polyamine with epichlorohydrin; and a glycidyl ester type epoxy resin obtained by reacting a polybasic acid such as phthalic acid or dimer acid with epichlorohydrin. Can be mentioned.
  • the curable component (A) may contain a photocurable resin.
  • the curable component (A) can impart photocurability to the sealing resin composition.
  • the sealing resin composition is injected between the base material 2 and the semiconductor chip 3 and then irradiated with light such as ultraviolet rays to cure. It can be used for the sealing material 4 produced by the above.
  • the photocurable resin may contain an appropriate photopolymerizable component.
  • the photopolymerizable component includes a monofunctional (meth) acrylate such as 2- (meth) acryloyloxyethyl phthalic acid, and pentaerythritol.
  • a monofunctional (meth) acrylate such as 2- (meth) acryloyloxyethyl phthalic acid, and pentaerythritol.
  • At least one compound selected from the group consisting of polyfunctional (meth) acrylates such as tri (meth) acrylates can be mentioned.
  • (meth) acrylic means at least one of acrylic and methacrylic, and for example, (meth) acrylate is one or both of acrylate and methacrylic.
  • the viscosity of the curable component (A) at 25 ° C. is preferably 100 mPa ⁇ s or more and 20 Pa ⁇ s or less.
  • the viscosity of the curable component (A) can be measured using, for example, a B-type rotational viscometer under the condition of a rotational speed of 50 rpm.
  • the filler (B) contains silica. Specifically, in the present embodiment, the filler (B) contains the first silica (B1) and the second silica (B2). That is, the sealing resin composition contains the first silica (B1) and the second silica (B2).
  • the average particle size of the first silica (B1) is 0.1 ⁇ m or more and 1.5 ⁇ m or less, and the standard deviation in the particle size distribution of the first silica (B1) is 0.01 or more and less than 1.0. Since the standard deviation in the particle size distribution of the first silica (B1) is 0.01 or more and less than 1.0, it can be said that the first silica (B1) is silica having a uniform particle size.
  • particles having the same particle size does not mean that the particle sizes of the particles contained in the first silica (B1) are exactly the same, but as described above, the average particle size It means that there is almost no difference in the particle size of each particle within the range of 0.1 ⁇ m or more and 1.5 ⁇ m or less. Since the average particle size of the first silica (B1) is 0.1 ⁇ m or more and 1.5 ⁇ m or less, it is a relatively fine particle and does not contain large silica, so that there is a gap between the base material and the semiconductor chip. In sealing, it is easy to inject the resin composition for sealing into a narrow gap.
  • the average particle size of the first silica (B1) is more preferably 0.1 ⁇ m or more and 1.0 ⁇ m or less. Further, it is preferable that the standard deviation in the particle size distribution of the first silica (B1) is 0.01 or more and 0.6 or less, more preferably 0.02 or more and 0.40 or less, and 0.02 or more and 0.36. The following is more preferable, and 0.05 or more and 0.36 or less is particularly preferable.
  • the average particle size of the second silica (B2) is more than 10% and 50% or less of the average particle size of the first silica (B1), and the standard deviation in the particle size distribution of the second silica (B2) is 0. It is 0.01 or more and less than 1.0.
  • the average particle size of the second silica (B2) is not particularly limited as long as it satisfies the above, but the average particle size of the second silica (B2) is, for example, 0.01 ⁇ m or more and 0.75 ⁇ m or less. Can be done.
  • the standard deviation in the particle size distribution of the second silica (B2) is preferably 0.01 or more and 0.10 or less, more preferably 0.02 or more and 0.08 or less, and 0.03 or more and 0.08 or less. Is more preferable, and 0.04 or more and 0.06 or less is particularly preferable.
  • the sealing resin composition of the present embodiment flows while maintaining a low viscosity. Sex can be ensured.
  • the filler (B) also preferably contains a third silica (B3). That is, the sealing resin composition preferably contains the first silica (B1), the second silica (B2), and the third silica (B3).
  • the average particle size of the third silica (B3) is not particularly limited as long as it is smaller than the average particle size of the second silica (B2).
  • the average particle size of the third silica (B3) is preferably 0.1% or more and 10% or less of the average particle size of the first silica (B1).
  • the standard deviation in the particle size distribution of the third silica (B3) is preferably 0.01 or more and less than 1.0, more preferably 0.01 or more and 0.1 or less, and 0.02 or more and 0.09 or less. If it is, it is more preferable, if it is 0.03 or more and 0.08 or less, it is further preferable, and if it is 0.04 or more and 0.06 or less, it is particularly preferable.
  • the sealing resin composition contains the third silica (B3), the sealing resin composition can be made particularly less fluid, and the sealing resin composition can be made less fluid. However, it may have even better chixing properties.
  • the mass ratio of the third silica (B3) is preferably 5% by mass or more and 40% by mass or less with respect to the total amount of the filler (B). If the mass ratio of the third silica (B3) to the total amount of the filler (B) is 5% by mass or more, the thixophilicity can be improved, and if it is 40% by mass or less, good fluidity can be maintained. it can.
  • d B1 an average particle diameter of the first silica (B1), the second silica (B2) an average particle diameter d B2, and a third average particle size of the silica (B3) and d B3
  • the first silica (B1), the second silica (B2), and the third silica (B3) the following relationship is established.
  • 1.5 ⁇ m ⁇ average particle size d B1 > average particle size d B2 > average particle size d B3 That is, as described above, the average particle size of the first silica (B1) is larger than either the average particle size of the second silica (B2) or the average particle size of the third silica (B3). Further, the average particle size of the second silica (B2) is larger than the average particle size (B3) of the third silica.
  • each of the first silica (B1) and the second silica (B2) is wet silica.
  • the wet silica is an amorphous silica synthesized in a liquid.
  • the wet silica can be produced by at least one method selected from the group consisting of a sedimentation method and a sol-gel method.
  • Wet silica is particularly preferably produced by the sol-gel method.
  • the average particle size of the wet silica particles can be kept relatively small, such as 0.1 ⁇ m or more and 1.5 ⁇ m or less, and the particle size distribution can be less likely to vary.
  • the sol-gel method is a synthesis method for obtaining a solid substance from a sol state in which fine particles such as colloids are dispersed in a solution through a gel state in which fluidity is lost, and an appropriate method may be adopted as the synthesis method.
  • the third silica (B3) is also preferably wet silica.
  • the third silica (B3) is also preferably wet silica produced by the sol-gel method.
  • each of the first silica (B1), the second silica (B2), and the third silica (B3) can be easily adjusted to be silica particles having a uniform particle size.
  • the fact that the first silica (B1) of the present disclosure is produced by the sol-gel method can be confirmed by cutting the appropriate particles of the first silica (B1) and observing the cross section thereof. Specifically, for example, a cured product of the sealing resin composition is cut, the cut surface is observed with an electron microscope or the like, and the image obtained by the electron microscope is visually confirmed to produce a sol-gel method. It can be judged that it was done. It can be confirmed that the second silica (B2) and the third silica (B3) are produced by the sol-gel method in the same manner as the first silica (B1).
  • the first silica (B1) is preferably surface-treated with a coupling agent.
  • the surface treatment of silica is possible, for example, by reacting a wet silica produced by a sol-gel method with a coupling agent (for example, a silane coupling agent).
  • a coupling agent for example, a silane coupling agent.
  • the silica is surface-treated, the dispersibility in the sealing resin composition can be improved.
  • the curable component (A) in the sealing resin composition contains an epoxy resin which is a thermosetting resin, the dispersibility can be significantly improved. Further, in this case, the viscosity of the sealing resin composition can be further reduced.
  • the second silica (B2) and the third silica (B3) are preferably surface-treated with a coupling agent.
  • the coupling agent includes, for example, a silane coupling agent having at least one functional group selected from the group consisting of an epoxy group, an amino group, a (meth) acryloyl group, and a phenyl group.
  • silica is preferably surface-treated with a silane coupling agent having a phenyl group.
  • the filler (B) becomes more familiar with the curable component (A) in the sealing resin composition, and the dispersibility of the sealing resin composition can be further improved.
  • the mass ratio of the first silica (B1) to the second silica (B2) in the filler (B) is preferably in the range of 60:40 to 98: 2.
  • the mass ratio of the first silica (B1) to the second silica (B2) to the third silica (B3) is from 60:30:10. It is preferable if it is within the range of 90: 8: 2.
  • the filler (B) may contain a filler other than silica as long as it does not interfere with the effects of the present disclosure.
  • the particle size of the filler (B) is controlled even when the filler (B) contains a filler other than silica. Therefore, it is preferable that the filler (B) does not contain a filler other than silica having an average particle size of 0.1 ⁇ m or more and 1.5 ⁇ m or less and a particle size distribution of more than 1%.
  • the sealing resin composition may contain components other than the components described above.
  • the sealing resin composition may contain an appropriate additive.
  • additives include curing agents, curing accelerators, fluxes, viscosity modifiers, surface modifiers, silane coupling agents, defoaming agents, leveling agents, low stress agents, pigments and the like.
  • the sealing resin composition can be obtained, for example, by blending the above components and, if necessary, adding an appropriate solvent and mixing.
  • the sealing resin composition can be prepared, for example, by the following method.
  • a mixture is obtained by simultaneously or sequentially blending the components that can be contained in the sealing resin composition described above. This mixture is stirred and mixed while performing heat treatment and cooling treatment as necessary.
  • a resin composition for sealing can be obtained.
  • a disper, a planetary mixer, a ball mill, a three-roll, a bead mill and the like can be applied in an appropriate combination as necessary.
  • the viscosity of the sealing resin composition at 25 ° C. is preferably less than 35 Pa ⁇ s. In this case, when molding the sealing resin composition, the coating workability by jet dispensing and the discharge stability can be improved. Further, in this case, good filling property under the semiconductor chip can be achieved.
  • the viscosity of the sealing resin composition at 25 ° C. is more preferably 25 Pa ⁇ s or less, and even more preferably 20 Pa ⁇ s or less.
  • the lower limit of the viscosity of the sealing resin composition at 25 ° C. is not particularly limited, but is, for example, 500 mPa ⁇ s or more.
  • the sealing resin composition can be cured by giving an appropriate stimulus such as heat or light depending on the type of the curable component (A).
  • a cured product of the sealing resin composition is obtained.
  • the sealing resin composition contains a thermosetting resin as the curable component (A)
  • it can be cured by heating.
  • the conditions for heating for example, the heating temperature, the heating time, the maximum heating temperature, and the like may be appropriately adjusted according to the type of the curable component (A), the type of the curing agent, and the like.
  • a photocurable resin is contained as the curable component (A)
  • it can be cured by irradiating with light such as ultraviolet rays.
  • the conditions for irradiating light such as the amount of irradiation light and the irradiation time, may be appropriately adjusted according to the type of the curable component (A), the type of the curing agent, and the like.
  • the sealing resin composition may be molded into, for example, a sheet or a paste.
  • the sheet-shaped sealing resin composition is superposed on the semiconductor chip 3 to form a semiconductor. It can be mounted while aligning with the chip 3 from above the base material 2. Further, the semiconductor chip 3 can be mounted while aligning the semiconductor chip 3 from above the base material 2 in a state where the sealing resin composition formed into a sheet is stacked on the base material 2. Therefore, similarly to the liquid sealing resin composition, the sheet-shaped sealing resin composition is also a pre-supplied underfill material for sealing between the base material 2 and the semiconductor chip 3. It is also possible to preferably use it.
  • FIG. 1 shows an example of the semiconductor device 1 of the present embodiment.
  • the semiconductor device 1 includes a base material 2 that supports the semiconductor chip 3, a semiconductor chip 3 that is face-down mounted on the base material 2, and a sealing material 4 that seals a gap between the semiconductor chip 3.
  • the sealing material 4 is made of a cured product of the liquid sealing resin composition described above.
  • the semiconductor device 1 and its manufacturing method will be described.
  • the semiconductor device 1 includes a base material 2 provided with a conductor wiring 21, a semiconductor chip 3 provided with a bump electrode 33 and mounted on the base material 2 by joining the bump electrode 33 to the conductor wiring, and a bump electrode 33.
  • a sealing material 4 for covering is provided.
  • the sealing material 4 is a cured product of the sealing resin composition described above.
  • the base material 2 is, for example, a mother substrate, a package substrate, or an interposer substrate.
  • the base material 2 includes an insulating substrate made of glass epoxy, polyimide, polyester, ceramic, etc., and a conductor wiring 21 made of a conductor such as copper formed on the surface of the insulating substrate.
  • the conductor wiring 21 includes, for example, an electrode pad.
  • the semiconductor chip 3 is a flip chip type chip such as BGA (ball grid array), LGA (land grid array), or CSP (chip size package).
  • the semiconductor chip 3 may be a PoP (package on package) type chip.
  • the semiconductor chip 3 includes a plurality of bump electrodes 33.
  • the bump electrode 33 includes solder.
  • the bump electrode 33 includes a pillar 31 and a solder bump 32 provided at the tip of the pillar 31.
  • the solder bump 32 is made of solder, so that the bump electrode 33 includes solder.
  • the pillar 31 is made of copper, for example.
  • the melting point of the solder included in the bump electrode 33 (for example, the solder in the solder bump 32) is not particularly limited, but may be a temperature at which it can be melted at a mounting temperature (for example, 220 to 260 ° C.) or lower when mounting a semiconductor chip. ..
  • the composition of the solder is not particularly limited and may be an appropriate composition, and for example, Sn-Ag-based solder and Sn-Ag-Cu-based solder can be used.
  • the structure of the bump electrode 33 including solder is not limited to the above.
  • the bump electrode 33 may include only spherical solder bumps 32 (solder balls). That is, the bump electrode 33 does not have to include pillars.
  • the sealing resin composition of the present embodiment is particularly preferably used in sealing the gap between the semiconductor chip 3 having the bump electrode 33 provided with the copper pillar 31 (Cu pillar) and the base material 2. Can be done.
  • the conventional sealing resin composition contains a filler such as silica
  • the area around the Cu pillar is covered with the sealing resin composition, and when it is cured and sealed, the area around the Cu pillar is sealed. Separation sometimes occurred between silica and the resin component in the stop resin composition. Therefore, the reliability of the semiconductor device may be lowered.
  • the filler (B) contains the first silica (B1), the second silica (B2), and if necessary, the third silica (B3).
  • the filler (B) contains the first silica (B1), the second silica (B2), and if necessary, the third silica (B3).
  • the sealing material produced from the resin composition of the present embodiment and the Cu pillar are less likely to be peeled off, so that the gap between the base material 2 and the semiconductor chip 3 in the semiconductor device 1 is the sealing resin composition. It is considered that it is easy to fill well depending on the object. That is, it is considered that the sealing resin composition of the present embodiment can sufficiently easily seal the gap between the base material 2 and the semiconductor chip 3. Further, when the sealing resin composition contains silica that has been surface-treated, the above effect is more remarkable, and therefore, the insulation reliability of the semiconductor device 1 can be further improved.
  • the sealing material 4 fills the entire gap between the base material 2 and the semiconductor chip 3. As a result, the sealing material 4 covers the entire bump electrode 33 and covers the joint between the bump electrode 33 and the conductor wiring 21. That is, the sealing material 4 is a so-called underfill.
  • the manufacturing method of the semiconductor device 1 will be described by giving an example.
  • the manufacturing method of the semiconductor device 1 is not limited to the method described below, and the semiconductor device 1 is a sealing resin composition with the base material 2. It suffices if the gap between the semiconductor chip 3 and the semiconductor chip 3 can be covered and sealed.
  • a base material 2 having a conductor wiring 21 and a semiconductor chip 3 having a bump electrode 33 are prepared, the semiconductor chip 3 is placed on the base material 2, and the bump electrode 33 is placed on the conductor wiring 21.
  • the sealing resin composition is arranged so as to cover the bump electrode 33, and the sealing resin composition and the bump electrode 33 are heat-treated to cure and seal the sealing resin composition.
  • the stopper 4 is manufactured, and the bump electrode 33 and the conductor wiring 21 are electrically connected.
  • the sealing resin composition may be arranged so as to cover the bump electrode 33.
  • the semiconductor chip 3 may be arranged on the base material 2 and the bump electrode 33 may be arranged on the conductor wiring 21.
  • the sealing resin composition may be placed on the semiconductor chip 3 and the base material 2 at any time. It may be placed in any position.
  • the sealing resin composition is placed on the base material 2, and then the semiconductor chip 3 is placed on the base material 2 and the base material 2 is placed.
  • the sealing resin composition is interposed between the semiconductor chip 3 and the semiconductor chip 3, and the bump electrode 33 is arranged on the conductor wiring 21.
  • the sealing resin composition is arranged so as to cover the bump electrode 33.
  • the semiconductor chip 3 is arranged on the base material 2 so that the bump electrode 33 is arranged on the conductor wiring 21, and then the sealing resin composition is placed between the base material 2 and the semiconductor chip 3.
  • the sealing resin composition may be interposed between the base material 2 and the semiconductor chip 3, and the sealing resin composition may be arranged so as to cover the bump electrode 33.
  • the encapsulating resin composition is arranged on the semiconductor chip 3 so as to cover the bump electrode 33.
  • the semiconductor chip 3 is arranged on the base material 2 so that the sealing resin composition is interposed between the base material 2 and the semiconductor chip 3 and the bump electrode 33 is arranged on the conductor wiring 21. To do.
  • the sealing resin composition is arranged so as to cover the bump electrode 33.
  • the sealing resin composition When the sealing resin composition is placed on the base material 2 or the sealing resin composition is placed on the semiconductor chip 3, for example, a method using a dispenser, a screen printing method, an inkjet method, a dipping method, or the like can be used. Place the sealing resin composition.
  • the heat treatment of the sealing resin composition and the bump electrode 33 is performed using, for example, a reflow furnace.
  • the heat treatment may be performed by an appropriate method using equipment other than the reflow furnace.
  • the sealing resin composition and the bump electrode 33 are heat-treated, the solder in the bump electrode 33 melts, so that the bump electrode 33 and the conductor wiring 21 are electrically connected, and the sealing resin composition.
  • the sealing material 4 is produced by curing the solder.
  • the semiconductor device 1 is obtained.
  • the conditions of the heat treatment may be appropriately set according to the composition of the sealing resin composition.
  • the maximum heating temperature is preferably 220 ° C. or higher and 260 ° C. or lower, for example.
  • the present invention is not limited to the above, and the maximum heating temperature may be appropriately set according to the composition of the sealing resin composition and the like.
  • -Silica 2 Silica produced by the sol-gel method and surface-treated with a silane coupling agent having a phenyl group (average particle size 0.3 ⁇ m. Standard deviation in particle size distribution is 0.04 or more and 0.5 or less).
  • .. -Silica 3 Silica produced by the sol-gel method and surface-treated with a silane coupling agent having a phenyl group (average particle size 0.1 ⁇ m. Standard deviation in particle size distribution is 0.04 or more and 0.5 or less).
  • .. -Silica 4 Spherical silica (Product name SE2030 manufactured by Admatex Co., Ltd. Average particle size 0.6 ⁇ m. Standard deviation in particle size distribution is 1.0 or more).
  • -Silica 5 Spherical silica (Product name 0.5um SE-E1 manufactured by Admatex Co., Ltd. Average particle size 0.5 ⁇ m. Standard deviation in particle size distribution is 1.0 or more).
  • -Silica 6 Silica produced by the sol-gel method and surface-treated with a silane coupling agent having a phenyl group (average particle size 50 nm, standard deviation in particle size distribution is 0.04 or more and 0.5 or less).
  • -Silica 7 Silica produced by the sol-gel method and surface-treated with a silane coupling agent having a phenyl group (average particle size 10 nm, standard deviation in particle size distribution is 0.04 or more and 0.5 or less).
  • -Epoxy resin 1 Bisphenol F type epoxy resin (manufactured by Toto Kasei Co., Ltd., product name YDF8170, epoxy equivalent 175eq./g).
  • -Epoxy resin 2 Amino epoxy resin (product name 636 manufactured by jRR Co., Ltd.).
  • (Additive) -Curing agent Aromatic amine (Nippon Kayaku Co., Ltd. product name Kayabad AA. Amine equivalent 65 eq./g).
  • -Colorant Carbon black (product name MA100 manufactured by jER Co., Ltd.).
  • -Coupling agent Epoxysilane (silane coupling agent.
  • Product name KBM403 manufactured by Shin-Etsu Chemical Co., Ltd.
  • -Modifier Polymethylsilsesquioxane powder (product name MSP-SN08 manufactured by Nikko Rika Co., Ltd.).
  • -Curing accelerator imidazole compound (product name 2E4MA manufactured by Shikoku Chemicals Corporation).
  • Viscosity 1. Using a B-type viscometer (model number TVB-10 manufactured by Toki Sangyo Co., Ltd.), the viscosity of the resin composition prepared in 1. 6 Measured under the condition of rotation speed of 50 rpm. Based on the obtained measurement results, evaluation was made according to the following criteria. A: The viscosity was less than 25 Pa ⁇ s. B: The viscosity was 25 Pa ⁇ s or more and 35 Pa ⁇ s or less. C: The viscosity was 35 Pa ⁇ or more.
  • the viscosity was measured in the same manner as in. Subsequently, the rotation speed of 50 rpm was changed to 1/10 of the rotation speed of 5 rpm, and the viscosity was measured. From the viscosity before changing the rotation speed (at low speed) and the viscosity after changing the rotation speed (at high speed), the rate of change in viscosity (viscosity at low speed / viscosity at high speed) is calculated and calculated. The viscosity index was used. Based on the obtained Chixo index, the evaluation was made according to the following criteria. A: The Chixo index was 0.7 or more and less than 1.5. B: The Chixo index was 1.5 or more and less than 2.5. C: The Chixo index was 2.5 or higher.
  • Fluidity Two flat glass plates are placed on a heatable pedestal (stage) with a width of 30 ⁇ m (gap), and the temperature of the stage is set to 90 ° C. The plate was heated. After the temperature of the glass plate reaches 90 ° C., in the gap of 30 ⁇ m, the above 1. The resin composition prepared in the above was injected, and the gap was made to flow by utilizing the capillary phenomenon. The time from the start of injection until the resin composition traveled a distance of 30 mm was measured. Based on the results obtained by the measurement, the evaluation was made according to the following criteria. A: The time required to advance 30 mm was less than 300 seconds. B: The time required to advance by 30 mm was 300 seconds or more and less than 500 seconds. C: The time required to advance 30 mm was 500 seconds or more.

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
PCT/JP2020/035983 2019-10-24 2020-09-24 封止用樹脂組成物、及び半導体装置 WO2021079677A1 (ja)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024032673A (ja) * 2022-08-29 2024-03-12 ケーシーシー コーポレーション エポキシ樹脂組成物

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63230729A (ja) * 1987-03-20 1988-09-27 Sumitomo Chem Co Ltd 半導体封止用樹脂組成物
JPH02167362A (ja) * 1988-08-04 1990-06-27 Polyplastics Co 電子部品封止用樹脂組成物及び電子部品
JPH06100313A (ja) * 1992-09-17 1994-04-12 Shin Etsu Chem Co Ltd 表面処理シリカ並びにその製造方法及び半導体封止用樹脂組成物用充填剤
JP2004352783A (ja) * 2003-05-27 2004-12-16 Matsushita Electric Works Ltd 封止用樹脂組成物
WO2018070237A1 (ja) * 2016-10-14 2018-04-19 日立化成株式会社 封止用樹脂組成物、電子部品装置及び電子部品装置の製造方法
WO2019163861A1 (ja) * 2018-02-21 2019-08-29 パナソニックＩｐマネジメント株式会社 封止用樹脂組成物、積層シート、硬化物、半導体装置及び半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4802421B2 (ja) * 2001-08-31 2011-10-26 住友ベークライト株式会社 エポキシ樹脂組成物及び半導体装置
TWI432477B (zh) * 2010-08-18 2014-04-01 Benq Materials Corp 環氧樹脂組成物
JP5758686B2 (ja) * 2011-04-21 2015-08-05 株式会社日本触媒 非晶質シリカ粒子
JPWO2013133015A1 (ja) * 2012-03-07 2015-07-30 東レ株式会社 半導体装置の製造方法および半導体装置の製造装置
JP5937403B2 (ja) * 2012-04-02 2016-06-22 デンカ株式会社 スラリー組成物及びそれを用いた樹脂組成物
JP6302902B2 (ja) * 2013-06-14 2018-03-28 東レ・ダウコーニング株式会社 反応性シリコーン組成物、反応性熱可塑体、硬化物、および光半導体装置
JP7225546B2 (ja) * 2018-03-01 2023-02-21 味の素株式会社 封止用樹脂組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63230729A (ja) * 1987-03-20 1988-09-27 Sumitomo Chem Co Ltd 半導体封止用樹脂組成物
JPH02167362A (ja) * 1988-08-04 1990-06-27 Polyplastics Co 電子部品封止用樹脂組成物及び電子部品
JPH06100313A (ja) * 1992-09-17 1994-04-12 Shin Etsu Chem Co Ltd 表面処理シリカ並びにその製造方法及び半導体封止用樹脂組成物用充填剤
JP2004352783A (ja) * 2003-05-27 2004-12-16 Matsushita Electric Works Ltd 封止用樹脂組成物
WO2018070237A1 (ja) * 2016-10-14 2018-04-19 日立化成株式会社 封止用樹脂組成物、電子部品装置及び電子部品装置の製造方法
WO2019163861A1 (ja) * 2018-02-21 2019-08-29 パナソニックＩｐマネジメント株式会社 封止用樹脂組成物、積層シート、硬化物、半導体装置及び半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024032673A (ja) * 2022-08-29 2024-03-12 ケーシーシー コーポレーション エポキシ樹脂組成物

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