WO2021077511A1 - 一种oled显示面板、其制备方法及其显示装置 - Google Patents

一种oled显示面板、其制备方法及其显示装置 Download PDF

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WO2021077511A1
WO2021077511A1 PCT/CN2019/119504 CN2019119504W WO2021077511A1 WO 2021077511 A1 WO2021077511 A1 WO 2021077511A1 CN 2019119504 W CN2019119504 W CN 2019119504W WO 2021077511 A1 WO2021077511 A1 WO 2021077511A1
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layer
color resist
light
emitting
oled
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PCT/CN2019/119504
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French (fr)
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刘世奇
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/622,946 priority Critical patent/US20210343791A1/en
Publication of WO2021077511A1 publication Critical patent/WO2021077511A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning

Definitions

  • the present invention relates to the technical field of flat display, in particular, an OLED display panel, a preparation method thereof, and a display device thereof.
  • OLED Organic Light-Emitting Diode
  • the organic light emitting diode display has self-luminescence, low driving voltage, high luminous efficiency, short response time, high definition and contrast, nearly 180° viewing angle, wide operating temperature range, and can realize flexible display and large-area full-color display Many other advantages make it widely used in the display field, lighting field and smart wear field, and there is a trend to replace the liquid crystal display.
  • One aspect of the present invention is to provide an OLED display panel whose functional layer adopts a new structural design, so that it can effectively prevent the pixel definition layer from affecting the light path of the light emitted by the light emitting layer, and at the same time, it can also make the The light emitted from the light-emitting layer can all pass through the color filter treatment of the corresponding color resist layer.
  • An OLED display panel which includes:
  • a substrate wherein a TFT device functional layer is provided on the substrate;
  • a color resist layer, the color resist layer is arranged on the side of the TFT device functional layer away from the substrate;
  • a planarization layer, the planarization layer is provided on the color resist layer;
  • An anode layer is arranged on the side of the planarization layer away from the color resist layer, and is electrically connected to the TFT device functional layer through a first via hole;
  • the OLED light-emitting layer is provided on the anode layer; wherein,
  • the projected area of the planarization layer on the substrate is the same size as the projected area of the color resist layer on the substrate.
  • the planarization layer involved in this case covers a relatively small area, which is only consistent with the projected area of the color resist layer on the substrate, and makes The anode provided thereon is flat, thereby preventing a short circuit between the cathode and the anode.
  • the arrangement of the planarization layer is such that it is consistent with the coverage area of the color resist layer in the light-emitting area of the OLED light-emitting layer. That is, the coverage area of the planarization layer in the light-emitting area is equal to the coverage area of the color resist layer in the light-emitting area, so as to ensure that the light emitted by the OLED light-emitting layer passes through the color resist layer. Perform color filter processing.
  • a pixel definition layer is provided on the device functional layer, and the OLED light-emitting layer is provided on the pixel definition layer.
  • a cathode layer is provided on the OLED light-emitting layer.
  • the surface of the pixel definition layer is flush with the surface of the anode disposed on the planarization layer. That is, the pixel definition layer and the planarized anode maintain a uniform height.
  • the surface of the pixel definition layer is higher than the surface of the anode and the light-emitting layer is confined therein. In this way, It can effectively prevent the pixel definition layer from affecting the light path of the light emitting layer (that is, the OLED light emitting layer), and can also improve the problem of residual photoresist of the pixel definition layer involved in the background art.
  • Another aspect of the present invention is to provide a method for manufacturing the OLED display panel of the present invention, which includes the following steps:
  • Step S1 Provide a substrate, and form the TFT device functional layer on the substrate;
  • Step S2 forming and patterning the color resist layer on the device functional layer
  • Step S3 performing film formation and patterning of the planarization layer on the color resist layer
  • Step S4 forming and patterning the anode layer on the planarization layer
  • Step S5 forming and patterning a pixel definition layer on the anode layer
  • Step S6 preparing the OLED light-emitting layer on the pixel definition layer
  • the projected area of the color resist layer and the remaining part of the planarization layer after the patterning are the same on the substrate.
  • the color resist layer and the planarization layer after the film formation are left after the patterning of the color resist layer and the planarization layer,
  • the coverage area in the light-emitting area is consistent.
  • step S5 the patterned surface height of the pixel definition layer is consistent with the height of the anode layer on the planarization layer.
  • step S6 the OLED light-emitting layer is vapor-deposited on the pixel defining layer over the entire surface.
  • another aspect of the present invention is to provide a display device, which includes the OLED display panel related to the present invention.
  • the beneficial effect of the present invention is: the OLED display panel of the present invention adopts a new structure of the functional layer, so that it can effectively prevent the pixel definition layer from emitting light to the light-emitting layer. At the same time, the emitted light from the light-emitting layer can be filtered by the corresponding color resist layer.
  • the functional layers involved include a planarization layer, a pixel definition layer, and a light-emitting layer.
  • planarization layer For the planarization layer, compared with the prior art method of providing large-area coverage of the planarization layer, this case reduces the coverage area of the planarization layer, and only retains the planarization layer in the OLED light-emitting area. Make the anode disposed on it flat, so as to prevent the problem of short between the anode and the cathode; the specific method may be in the light-emitting area, the coverage of the planarization layer and the all disposed underneath.
  • the coverage area of the color resist layer is consistent, that is, the area of the planarization layer is equal to the area of the color resist layer, thereby ensuring that the light emitted by the light emitting layer (ie, the OLED light emitting layer in this case) will pass through the Color filter processing of color resist.
  • the height of the pixel definition layer is controlled to be flat.
  • the height of the anode is the same, that is, the upper surface of the pixel definition layer and the planarized anode surface maintain a uniform height, so as to effectively prevent the pixel definition layer from affecting the light path of the emitted light, and can also improve the The problem of residual photoresist in the pixel definition layer is described.
  • the light-emitting layer compared with the arrangement method in which the light-emitting layer in the prior art is arranged in the pixel definition layer, this case adopts the method of vapor-depositing the entire surface of the OLED light-emitting layer on the pixel definition layer, and at the same time
  • the definition of the light-emitting area also becomes: the sandwich structure area composed of the anode, the OLED device and the cathode.
  • FIG. 1 is a schematic diagram of the structure of an OLED display panel manufacturing method provided in an embodiment of the present invention after step S1 is completed;
  • Fig. 2 is a schematic diagram of the structure of the preparation method described in Fig. 1 after completion.
  • this case also involves a structure of an OLED display panel and a preparation method thereof, in order to avoid unnecessary repetition, the structure of the OLED display panel involved in this case will be described below in conjunction with the preparation method thereof.
  • An embodiment of the present invention provides a method for preparing an OLED display panel, which can be divided into two stages, wherein the first stage is the preparation stage of the TFT device functional layer, and the second stage is the preparation stage of the light-emitting functional layer .
  • the method involved in the present invention categorizes it as step S1, and for the second stage, it is divided into step S2 to step S7. details as follows:
  • Step S1 a substrate 100 is provided, and a TFT device functional layer is formed on the substrate; please refer to FIG. 1 for the completed structure diagram.
  • the functional layer includes a TFT device functional layer, specifically, a light shielding layer (LS) 1011 and a buffer layer (Buffer layer) 101 are deposited and patterned on a glass substrate or other base substrate 100, wherein the buffer The layer 101 may be a single layer or a laminated structure, and the specific materials used may be SiOx, SiNx/SiOx, AlOx/SiOx, and so on. Then, an IGZO or similar oxide semiconductor film layer 102, such as IZO, IGO, IGTO, IGZTO, etc., is deposited on the buffer layer 101, and patterned.
  • IGZO or similar oxide semiconductor film layer 102 such as IZO, IGO, IGTO, IGZTO, etc.
  • the gate insulating layer 103 can also be a single layer or a stacked structure, and the specific materials used are It can be SiOx, SiNx, AlOx, SiNx/SiOx, etc.; wherein the gate metal electrode layer 104 is preferably Cu/Mo stack, Cu/MoTi stack, Cu/Ti stack, Al/Mo stack, and CuNb Alloy single layer, etc.
  • an intermediate dielectric layer (ILD Layer) 105 is deposited and patterned and hole-opened.
  • the ILD layer 105 may be SiOx, SiOx/SiNx stack, or the like.
  • the source and drain (S/D) metal electrode layer 106 is deposited and patterned.
  • the S/D layer 106 is preferably a Cu/Mo laminate, Cu/MoTi laminate, Cu/Ti laminate, Al/Mo laminate, CuNb alloy single layer, and the like.
  • a passivation layer (PV) 108 is deposited, where the passivation layer 108 may be a single layer or a stacked structure, and the specific materials used may be SiNx, SiOx, SiOx/SiOx, and so on.
  • the TFT device layer included in the functional layer and the passivation layer provided thereon are merely illustrative, and in other different embodiments, the functional layer may be composed of other device layers, specifically It depends on the need, and there is no limit.
  • Step S2 forming a color resist layer 115 and patterning it on the passivation layer 108 of the device functional layer;
  • Step S3 forming and patterning the planarization layer 114 on the color resist layer 115;
  • Step S4 forming and patterning the anode layer 113 on the planarization layer 114;
  • Step S5 forming and patterning the pixel definition layer 111 on the anode layer 113;
  • Step S6 preparing the OLED light-emitting layer 110 on the pixel defining layer 111.
  • Step S7 preparing a cathode layer 112 and an encapsulation layer (not shown) on the OLED light-emitting layer.
  • the OLED display panel involved in this case overcomes the defects in the prior art. details as follows:
  • the OLED panel involved in the present invention includes the planarization layer 114.
  • the coverage of the planarization layer 114 is reduced in this case. Area, the planarization layer 114 is only stored in the light-emitting area of the OLED light-emitting layer, and the anode layer provided thereon is flattened, so as to prevent a short circuit between the anode layer and the cathode layer.
  • the specific method used may be that in the light-emitting area, the coverage area of the planarization layer 114 is consistent with the coverage area of the color resist layer 115 disposed thereunder, that is, the area of the planarization layer 114 is equal to the coverage area of the color resist layer 115.
  • the area of the color resist layer 115 further ensures that the light emitted by the OLED light-emitting layer 110 will pass the color filtering process of the color resist layer 115.
  • the pixel definition layer 111 included in it compared to the pixel definition layer in the prior art in which the anode is higher than the anode and the light-emitting layer 110 is confined therein, the pixel definition layer is defined in this case.
  • the height of 111 is controlled to be the same height as the planarized anode 113, that is, the upper surface of the pixel definition layer 111 and the planarized anode 113 surface maintain a uniform height, thereby effectively preventing the pixel definition layer 111 from pairing
  • the light path of the emitted light emitted by the OLED affects, and can also improve the problem of residual photoresist in the pixel definition layer 111.
  • the light-emitting area defined by it is: a sandwich structure area composed of an anode 113, an OLED light-emitting layer 110, and a cathode 112; and is compared with the light-emitting layer in the prior art. It is a method of setting in the pixel defining layer.
  • the light-emitting layer involved in the present invention is realized by evaporating the OLED light-emitting layer 110 on the pixel defining layer 111 on the entire surface.
  • another aspect of the present invention is to provide a display device, which includes the OLED display panel of the present invention.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

一种OLED显示面板、其制备方法及显示装置，OLED显示面板包括基板（100），基板（100）上设置有TFT器件功能层，TFT器件功能层上设置有色阻层（115），色阻层（115）上设置有平坦化层（114），平坦化层（114）上设置有阳极层（112）和OLED发光层（110）；平坦化层（114）在基板（100）上的投影面积与色阻层（115）在基板（100）上的投影面积大小相等。

Description

一种OLED显示面板、其制备方法及其显示装置
本申请要求于2019年10月23日提交中国专利局、申请号为201911012832.4、发明名称为“一种OLED显示面板、其制备方法及其显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及平面显示技术领域，尤其是，其中的一种OLED显示面板、其制备方法及其显示装置。
 背景技术
已知，随着平面显示技术的不断发展，新型的平面显示器也开始全面取代CRT显示器，成为市场上的主流显示设备。其中最开始被市场接受的是平面液晶显示器（Liquid Crystal Display，LCD），由于其自身具有的轻、薄等性能，使得其很快被市场接受，并进而获得广泛的推广应用，这同时也使得其市场占有率很高。
但随着显示技术的发展，液晶显示器还是存有一定的显示性能上的缺陷，因此，业界也是不断进行新型的平面显示技术的开发，这其中就包括有机发光二极管显示器（Organic Light-Emitting Diode,OLED）。
其中所述有机发光二极管显示器具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，以及可实现柔性显示与大面积全色显示等诸多优点，使其在显示领域、照明领域及智能穿戴等领域有着广泛地应用，并有取代液晶显示器的趋势。
而随着人们对面板显示质量的高要求，漏光问题逐渐受到重视。由于漏光会使得色域值减少，色域减少会使显示画面的显示质量降低，色彩的对比度和饱和度均会受到影响。
因此，确有必要来开发一种新型的OLED显示面板，来克服现有技术中的缺陷。
 技术问题
本发明的一个方面是提供一种OLED显示面板，其功能层采用新型的结构设计，使得其能有效的防止其像素定义层对于其发光层发出的出射光的光路影响，同时，还能使得所述发光层的出射光均能经过其对应的色阻层的滤色处理。
 技术解决方案
本发明采用的技术方案如下：
一种OLED显示面板，其包括：
基板，其中所述基板上设置有TFT器件功能层；
色阻层，所述色阻层设于所述TFT器件功能层远离所述基板的一侧；
平坦化层，所述平坦化层设于所述色阻层上；
阳极层，所述阳极层设于所述平坦化层远离所述色阻层一侧，并通过第一过孔与所述TFT器件功能层电连接；
OLED发光层，所述OLED发光层设于所述阳极层上；其中，
所述平坦化层在所述基板的投影面积与所述色阻层在所述基板上的投影面积大小相等。
也就是说，相比较现有技术而言，本案涉及的所述平坦化层，其所覆盖的区域相对较少，其只是与所述色阻层在所述基板上的投影面积一致，并使其上设置的所述阳极平坦，进而防止所述阴极和所述阳极之间出现短路（short）问题。
进一步的，其中所述平坦化层的设置方式使得其与所述色阻层在所述OLED发光层的发光区内的覆盖区域范围一致。即所述平坦化层在所述发光区内的覆盖面积等于所述色阻层在所述发光区内的覆盖面积，从而保证所述OLED发光层发出的光，均会经过所述色阻层进行滤色处理。
进一步的，在不同实施方式中，其中所述器件功能层上设置有像素定义层，所述OLED发光层设置于所述像素定义层上。
进一步的，在不同实施方式中，其中所述OLED发光层上设置有阴极层。
进一步的，在不同实施方式中，其中所述像素定义层的表面与设置在所述平坦化层上的阳极的表面平齐。即所述像素定义层与平坦化的阳极保持统一的高度，相对于现有技术中，所述像素定义层表面高出所述阳极表面并将所述发光层限定于其内而言，如此，能够有效的防止所述像素定义层对所述发光层（即所述OLED发光层）出射光的光路影响，并且还能够改善背景技术中涉及的所述像素定义层光阻残留的问题。
进一步的，本发明的又一方面为提供一种本发明涉及的所述OLED显示面板的制备方法，其包括以下步骤：
步骤S1、提供一基板，在所述基板上形成所述TFT器件功能层；
步骤S2、在所述器件功能层上进行所述色阻层的成膜及其图形化；
步骤S3、在所述色阻层上进行所述平坦化层的成膜及其图形化；
步骤S4、在所述平坦化层上进行所述阳极层的成膜及其图形化；
步骤S5、在所述阳极层上进行像素定义层的成膜及其图形化；以及
步骤S6、在所述像素定义层上进行所述OLED发光层的制备；
其中在所述步骤S3和步骤S4中，其中所述色阻层和所述平坦化层图形化后保留的部分在所述基板上的投影面积大小相等。
进一步的，在不同实施方式中，其中在所述步骤S3和步骤S4中，成膜后的色阻层和平坦化层在图形化后保留下的所述色阻层和所述平坦化层，在所述发光区内的覆盖区域范围是一致的。
进一步的，在不同实施方式中，在步骤S5中，其中所述像素定义层图形化后的表面高度与所述平坦化层上的所述阳极层高度一致。
进一步的，在不同实施方式中，在步骤S6中，其中所述OLED发光层是整面蒸镀于所述像素定义层上。
进一步的，本发明的又一方面是提供一种显示装置，其包括本发明涉及的所述OLED显示面板。
 有益效果
相对于现有技术，本发明的有益效果是：本发明涉及的一种OLED显示面板，其功能层采用新型的结构设置，使得其能有效的防止其像素定义层对于其发光层发出的出射光的光路影响，同时，还能使得所述发光层的出射光均能经过其对应的色阻层的滤色处理，这其中涉及的功能层包括平坦化层、像素定义层和发光层。
其中对于所述平坦化层而言，相对于现有技术中的所述平坦化层大面积覆盖的设置方式，本案减少所述平坦化层的覆盖面积，只在OLED发光区域存留平坦化层，使其上设置的所述阳极平坦，从而防止所述阳极和阴极之间短路（short）问题；具体采用的方式可以是在所述发光区，所述平坦化层的覆盖范围与其下设置的所述色阻层的覆盖区域范围一致，即所述平坦化层的面积等于所述色阻层的面积，进而保证所述发光层（即本案中的OLED发光层）发出的光均会经过所述色阻的滤色处理。
对于所述像素定义层而言，相对于现有技术中的像素定义层高出阳极层并将所述发光层限定于其内的设置方式，本案将所述像素定义层的高度控制为与平坦化的所述阳极相同的高度，即所述像素定义层的上表面与平坦化的阳极表面保持统一的高度，从而有效的防止所述像素定义层对出射光的光路影响，并且还可以改善所述像素定义层存在的光阻残留的问题。
而对于所述发光层而言，相对于现有技术中的发光层是设置在像素定义层中的设置方式，本案是采用整面蒸镀OLED发光层于所述像素定义层上的方式，同时对于发光区域的界定也是变为：阳极、OLED器件及阴极所构成的三明治结构区域。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明的一个实施方式中提供的一种OLED显示面板制备方法，其步骤S1完成后的结构示意图；
图2为图1所述的制备方法，其完成后的结构示意图。
 本发明的实施方式
以下将结合附图和实施例，对本发明涉及的一种OLED显示面板、其制备方法及其显示装置的技术方案作进一步的详细描述。
其中由于本案同时涉及一种OLED显示面板的结构及其制备方法，为避免不必要的赘述，以下将结合其制备方法对本案涉及的所述OLED显示面板的结构进行说明。
本发明的一个实施方式提供了一种OLED显示面板的制备方法，其可以划分为两个阶段，其中第一阶段为TFT器件功能层的制备阶段，而第二阶段则为发光功能层的制备阶段。其中对于所述第一阶段，本发明涉及的方法将其统一归为步骤S1，而对于第二阶段，则将其划分为步骤S2至步骤S7。具体如下：
步骤S1、提供一基板100，在所述基板上形成TFT器件功能层；其中完成后的结构图示，请参阅图1所示。
其中所述功能层包括TFT器件功能层，具体为在玻璃基板或是其他衬底基板100上沉积遮光层（LS）1011和缓冲层（Buffer层）101并对其进行图形化，其中所述缓冲层101可以为单层或是叠层结构，具体采用的材料可以为SiOx、SiNx/SiOx、AlOx/SiOx等等。然后在所述缓冲层101上沉积IGZO或类似的氧化物半导体膜层102，例如，IZO、IGO、IGTO、IGZTO等，并对其进行图案化处理。
然后沉积栅极绝缘层（GI）103及栅极金属电极（GE）层104并对其进行图案化，其中所述栅极绝缘层103也可以是单层或是叠层结构，具体采用的材料可为SiOx、SiNx、AlOx、SiNx/SiOx等等；其中所述栅极金属电极层104优选为Cu/Mo叠层、Cu/MoTi叠层、Cu/Ti叠层、Al/Mo叠层以及CuNb合金单层等。
然后沉积中间电介质层（ILD Layer）105并对其图案化及开孔处理，其中所述ILD层105可为SiOx、SiOx/SiNx叠层等。沉积源漏极（S/D）金属电极层106并对其图案化。其中所述S/D层106优选为Cu/Mo叠层、Cu/MoTi叠层、Cu/Ti叠层、Al/Mo叠层以及CuNb合金单层等。
最后沉积钝化层（PV）108，其中所述钝化层108可以是单层或是叠层结构，具体采用的材料可为SiNx、SiOx、SiOx/SiOx等等。
进一步的，其中所述功能层包括的TFT器件层和其上设置的钝化层，仅为举例性说明，而在其他不同实施方式中，所述功能层可以是由其他器件层构成，具体可随需要而定，并无限定。
进一步的，对于所述第二阶段制备发光功能层阶段，包括的步骤具体如下，且完成后的结构图示，请参阅图2所示。
步骤S2、在所述器件功能层的所述钝化层108上进行色阻层115的成膜及其图形化；
步骤S3、在所述色阻层115上进行平坦化层114的成膜及其图形化；
步骤S4、在所述平坦化层114上进行阳极层113的成膜及其图形化；
步骤S5、在所述阳极层113上进行像素定义层111的成膜及其图形化；
步骤S6、在所述像素定义层111上进行所述OLED发光层110的制备；以及
步骤S7、在所述OLED发光层上制备阴极层112及封装层（未图示）。
对于发光功能层所包括的像素定义层111、色阻层115、平坦化层114、阳极113、OLED发光层110以及阴极层112而言，本案对其中的一些功能层采用了新型的结构设置，从而使得本案涉及的所述OLED显示面板克服了现有技术中的缺陷。具体如下：
其中本发明涉及的所述OLED面板，其所包括的所述平坦化层114，相对于现有技术中的所述平坦化层大面积覆盖的设置方式，本案减少所述平坦化层114的覆盖面积，只在OLED发光层的发光区域存留所述平坦化层114，并使其上设置的所述阳极层平坦，从而防止所述阳极层和阴极层之间出现短路（short）问题。其中具体采用的方式可以是在所述发光区内，所述平坦化层114的覆盖范围与其下设置的所述色阻层115的覆盖区域范围一致，即所述平坦化层114的面积等于所述色阻层115的面积，进而保证所述OLED发光层110发出的光均会经过所述色阻层115的滤色处理。
进一步的，对于其所包括的所述像素定义层111，相对于现有技术中的像素定义层高出阳极并将所述发光层110限定于其内的设置方式，本案将所述像素定义层111的高度控制为与平坦化的所述阳极113相同的高度，即所述像素定义层111的上表面与平坦化的阳极113表面保持统一的高度，从而有效的防止所述像素定义层111对所述OLED发出的出射光的光路影响，并且还可以改善所述像素定义层111存在的光阻残留的问题。
进一步的，本发明涉及的所述OLED显示面板，其所定义的所述发光区域为：阳极113、OLED发光层110及阴极112所构成的三明治结构区域；且相对于现有技术中的发光层是设置在像素定义层中的设置方式，本发明涉及的所述发光层是采用整面蒸镀OLED发光层110于所述像素定义层111上的方式实现。
进一步的，本发明的又一方面是提供一种显示装置，其包括本发明涉及的OLED 显示面板。
本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。

Claims (10)

  1. 一种OLED显示面板，其包括：
    基板，其中所述基板上设置有TFT器件功能层；
    色阻层，所述色阻层设于所述TFT器件功能层远离所述基板的一侧；
    平坦化层，所述平坦化层设于所述色阻层上；
    阳极层，所述阳极层设于所述平坦化层远离所述色阻层一侧，并通过第一过孔与所述TFT器件功能层电连接；
    OLED发光层，所述OLED发光层设于所述阳极层上；其中，
    所述平坦化层在所述基板上的投影面积与所述色阻层在所述基板上的投影面积大小相等。
  2. 根据权利要求1所述的OLED显示面板；其中，其中所述平坦化层的设置方式使得其与所述色阻层在所述OLED发光层的发光区内的覆盖区域范围一致。
  3. 根据权利要求1所述的OLED显示面板；其中，其中所述器件功能层上设置有像素定义层，所述像素定义层设有开口区，其中所述色阻层、平坦化层以及所述OLED发光层均设置于所述像素定义层的所述开口区内。
  4. 根据权利要求3所述的OLED显示面板；其中，其中所述像素定义层的表面与设置在所述平坦化层上的阳极的表面平齐。
  5. 根据权利要求1所述的OLED显示面板；其中，其中所述像素定义层上还设置有阴极层和封装层。
  6. 一种制备根据权利要求1所述的OLED显示面板的制备方法；其中，其包括以下步骤：
    步骤S1、提供一基板，在所述基板上形成所述TFT器件功能层；
    步骤S2、在所述器件功能层上进行所述色阻层的成膜及其图形化；
    步骤S3、在所述色阻层上进行所述平坦化层的成膜及其图形化；
    步骤S4、在所述平坦化层上进行所述阳极层的成膜及其图形化；
    步骤S5、在所述阳极层上进行像素定义层的成膜及其图形化；以及
    步骤S6、在所述像素定义层上进行所述OLED发光层的制备；
    其中在所述步骤S3和步骤S4中，其中所述色阻层和所述平坦化层图形化后保留的部分在所述基板上的投影面积大小相等。
  7. 根据权利要求6所述的制备方法；其中，在所述步骤S3和步骤S4中，其中成膜后的色阻层和平坦化层在图形化后保留下的所述色阻层和所述平坦化层，在所述OLED发光层的发光区内的覆盖区域范围是一致的。
  8. 根据权利要求6所述的制备方法；其中，在步骤S5中，其中所述像素定义层图形化后的表面高度与所述平坦化层上的所述阳极层的高度一致。
  9. 根据权利要求6所述的制备方法；其中，在步骤S6中，其中所述OLED发光层是整面蒸镀于所述像素定义层上。
  10. 一种显示装置，其包括权利要求1所述的OLED显示面板。
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