WO2021074967A1 - Élément de réception de lumière - Google Patents

Élément de réception de lumière Download PDF

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Publication number
WO2021074967A1
WO2021074967A1 PCT/JP2019/040494 JP2019040494W WO2021074967A1 WO 2021074967 A1 WO2021074967 A1 WO 2021074967A1 JP 2019040494 W JP2019040494 W JP 2019040494W WO 2021074967 A1 WO2021074967 A1 WO 2021074967A1
Authority
WO
WIPO (PCT)
Prior art keywords
receiving element
substrate
light
light receiving
incident
Prior art date
Application number
PCT/JP2019/040494
Other languages
English (en)
Japanese (ja)
Inventor
詔子 辰己
允洋 名田
Original Assignee
日本電信電話株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電信電話株式会社 filed Critical 日本電信電話株式会社
Priority to JP2021552015A priority Critical patent/JP7280532B2/ja
Priority to PCT/JP2019/040494 priority patent/WO2021074967A1/fr
Priority to US17/762,314 priority patent/US20220416098A1/en
Publication of WO2021074967A1 publication Critical patent/WO2021074967A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/30—Optical coupling means for use between fibre and thin-film device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements

Abstract

L'impact de la lumière à partir de la surface supérieure d'un élément de réception de lumière est possible tout en réalisant une structure ayant une longueur de trajet optique étendue, et en conséquence, rend facile le montage optique. Dans l'élément de réception de lumière dans lequel une première couche semi-conductrice comprenant un premier semi-conducteur de type électriquement conducteur formé sur la surface supérieure d'un substrat, une couche d'absorption de lumière comprenant un semi-conducteur, une seconde couche semi-conductrice comprenant un second semi-conducteur de type électriquement conducteur, une première électrode formée en contact avec la première couche semi-conductrice, et une seconde électrode qui est formée en contact avec la seconde couche semi-conductrice et comprend une première couche réfléchissante comprenant du métal qui sont formées dans l'ordre dans la direction verticale sur la surface supérieure du substrat, la lumière incidente frappe la surface supérieure du substrat, et après avoir été réfléchie par la surface inférieure du substrat, est frappée par la couche d'absorption de lumière diagonalement par rapport à la direction verticale.
PCT/JP2019/040494 2019-10-15 2019-10-15 Élément de réception de lumière WO2021074967A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2021552015A JP7280532B2 (ja) 2019-10-15 2019-10-15 受光素子
PCT/JP2019/040494 WO2021074967A1 (fr) 2019-10-15 2019-10-15 Élément de réception de lumière
US17/762,314 US20220416098A1 (en) 2019-10-15 2019-10-15 Light Receiving Element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/040494 WO2021074967A1 (fr) 2019-10-15 2019-10-15 Élément de réception de lumière

Publications (1)

Publication Number Publication Date
WO2021074967A1 true WO2021074967A1 (fr) 2021-04-22

Family

ID=75538705

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/040494 WO2021074967A1 (fr) 2019-10-15 2019-10-15 Élément de réception de lumière

Country Status (3)

Country Link
US (1) US20220416098A1 (fr)
JP (1) JP7280532B2 (fr)
WO (1) WO2021074967A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11377130B2 (en) 2018-06-01 2022-07-05 Tetra Tech, Inc. Autonomous track assessment system
US10807623B2 (en) 2018-06-01 2020-10-20 Tetra Tech, Inc. Apparatus and method for gathering data from sensors oriented at an oblique angle relative to a railway track

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121777A (ja) * 1991-10-25 1993-05-18 Sumitomo Electric Ind Ltd 受光素子
JP2002151730A (ja) * 2000-11-14 2002-05-24 Sumitomo Electric Ind Ltd 半導体受光素子
JP2002344002A (ja) * 2001-03-12 2002-11-29 Matsushita Electric Ind Co Ltd 受光素子及び受光素子実装体
JP2011243675A (ja) * 2010-05-17 2011-12-01 Nippon Telegr & Teleph Corp <Ntt> アバランシェフォトダイオード
US9793424B2 (en) * 2014-08-12 2017-10-17 Samsung Electronics Co., Ltd. Photoelectric conversion device and optical signal receiving unit having photodiode
JP2018093149A (ja) * 2016-12-07 2018-06-14 日本電信電話株式会社 受光素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005294669A (ja) * 2004-04-02 2005-10-20 Nippon Telegr & Teleph Corp <Ntt> 表面入射型受光素子
JP2006344681A (ja) * 2005-06-07 2006-12-21 Sumitomo Electric Ind Ltd 受光素子及び受光素子モジュール

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121777A (ja) * 1991-10-25 1993-05-18 Sumitomo Electric Ind Ltd 受光素子
JP2002151730A (ja) * 2000-11-14 2002-05-24 Sumitomo Electric Ind Ltd 半導体受光素子
JP2002344002A (ja) * 2001-03-12 2002-11-29 Matsushita Electric Ind Co Ltd 受光素子及び受光素子実装体
JP2011243675A (ja) * 2010-05-17 2011-12-01 Nippon Telegr & Teleph Corp <Ntt> アバランシェフォトダイオード
US9793424B2 (en) * 2014-08-12 2017-10-17 Samsung Electronics Co., Ltd. Photoelectric conversion device and optical signal receiving unit having photodiode
JP2018093149A (ja) * 2016-12-07 2018-06-14 日本電信電話株式会社 受光素子

Also Published As

Publication number Publication date
JPWO2021074967A1 (fr) 2021-04-22
JP7280532B2 (ja) 2023-05-24
US20220416098A1 (en) 2022-12-29

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