WO2021068413A1 - 一种显示面板 - Google Patents

一种显示面板 Download PDF

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Publication number
WO2021068413A1
WO2021068413A1 PCT/CN2019/127072 CN2019127072W WO2021068413A1 WO 2021068413 A1 WO2021068413 A1 WO 2021068413A1 CN 2019127072 W CN2019127072 W CN 2019127072W WO 2021068413 A1 WO2021068413 A1 WO 2021068413A1
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Prior art keywords
layer
display panel
source
disposed
substrate
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PCT/CN2019/127072
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English (en)
French (fr)
Inventor
周阳
蔡在秉
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/771,234 priority Critical patent/US11778872B2/en
Publication of WO2021068413A1 publication Critical patent/WO2021068413A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED

Definitions

  • the present invention relates to the field of display technology, in particular to a display panel.
  • Organic Light-Emitting Display Device (Full English Name: Organic Light-Emitting Diode, abbreviated as OLED) is also known as organic electro-laser display device and organic light-emitting semiconductor.
  • OLED Organic Light-Emitting Diode
  • the working principle of OLED is: when the power is supplied to the appropriate voltage, the positive electrode holes and the negative electrode charges will be combined in the light-emitting layer, and under the action of the Coulomb force, they will recombine with a certain probability to form excitons in the excited state (electron-hole Yes), and this excited state is unstable in a normal environment.
  • the excitons of the excited state recombine and transfer energy to the luminescent material, making it transition from the ground state energy level to the excited state, and the excited state energy is through the radiative relaxation process It produces photons, releases light energy, and produces light.
  • the three primary colors of red, green and blue are produced according to the different formulas, which constitute the basic colors.
  • OLED has the advantages of low voltage demand, high power saving efficiency, fast response, light weight, thin thickness, simple structure, low cost, wide viewing angle, almost infinitely high contrast, low power consumption, and extremely high response speed. It has become today's One of the most important display technologies.
  • An object of the present invention is to provide a display panel, which can solve the problem that when the existing display panel bends the bending area, the existing bending radius is uncontrollable, which easily causes the metal traces in the bending area to break, which reduces Issues such as the reliability of the display panel.
  • an embodiment of the present invention provides a display panel, which is defined with a bending area and a non-bending area, which includes a substrate, an insulating layer, and a source and drain layer.
  • the insulating layer is disposed on the substrate; the source and drain layers are disposed on the insulating layer; wherein the source and drain layers in the non-bending area include a plurality of metal traces arranged at intervals; wherein The source and drain layers of the bending area are provided with grooves at positions corresponding to the metal traces, and conductive materials are filled in the grooves.
  • the display panel further includes a semiconductor device layer, and the semiconductor device layer is disposed on the substrate.
  • the semiconductor device layer includes: an active layer, a gate insulating layer, and a gate layer. Wherein the active layer is disposed on the substrate; the gate insulating layer is disposed on the active layer; the gate layer is disposed on the gate insulating layer; and the insulating layer is disposed on On the gate layer.
  • the display panel further includes: a flat layer, the flat layer is disposed on the source and drain layer; and a pixel definition layer, the pixel definition layer is disposed on the flat layer.
  • the groove penetrates the pixel definition layer and the flat layer to the source and drain layer.
  • the display panel further includes a backing plate, and the backing plate is disposed on a side of the substrate away from the source and drain layer.
  • the backing plate is provided with conductive bridges at intervals corresponding to the position of the groove, and the groove penetrates the pixel definition layer, the flat layer, the source and drain layer, and the insulating layer until it penetrates the substrate.
  • the conductive bridge is formed by one or more of 3D printing technology and electroplating.
  • the shape of the side surface of the contact surface between the backing plate and the bent substrate includes an arc or a rectangle.
  • the groove is formed by one or more of laser, wet etching, and dry etching.
  • the conductive material includes one or more of conductive ink, graphene dispersion liquid, and polyaniline solution.
  • the conductive material uses an electro-hydraulic inkjet technology to use negative voltage printing to fill the groove.
  • the present invention relates to a display panel.
  • the present invention provides a groove at the position of the source and drain layer of the bending area corresponding to the metal wiring, and the groove is filled with conductive material.
  • the metal traces are connected through conductive materials, so that the metal traces in the bending area do not need to consider the problem of stress balance, thereby reducing the bending radius, reducing the frame width, increasing the screen-to-body ratio, and ultimately bringing customers a better visual experience;
  • a backing plate is provided, and conductive bridges are arranged at the positions of the backing plate corresponding to the grooves. The conductive bridges can better connect the metal traces and prevent the metal traces from being too thick. Low leads to the phenomenon that conductive materials cannot connect to metal traces.
  • FIG. 1 is a schematic diagram of the structure of a display panel according to Embodiment 1 of the present invention.
  • FIG 2 is an A-A cross-sectional view of the structure diagram of the display panel of the embodiment 1 of the present invention.
  • Fig. 3 is a schematic plan view of the source and drain layers of the present invention.
  • FIG. 4 is a schematic diagram of the structure of the display panel according to the second embodiment of the present invention.
  • FIG. 5 is a B-B cross-sectional view of a schematic diagram of the structure of the display panel according to Embodiment 2 of the present invention.
  • Fig. 6 is a schematic diagram of the structure of the backing plate of the second embodiment of the present invention.
  • FIG. 7 is a C-C cross-sectional view of a schematic structural diagram of a display panel of Embodiment 2 of the present invention.
  • FIG. 8 is a schematic structural diagram of a display panel of Embodiment 3 of the present invention.
  • FIG. 9 is a D-D cross-sectional view of a schematic structural diagram of a display panel of Embodiment 3 of the present invention.
  • FIG. 10 is a schematic diagram of the structure of the backing plate of Embodiment 3 of the present invention.
  • the component can be directly placed on the other component; there may also be an intermediate component on which the component is placed , And the intermediate component is placed on another component.
  • a component is described as “installed to” or “connected to” another component, both can be understood as directly “installed” or “connected”, or a component is “installed to” or “connected to” through an intermediate component Another component.
  • a display panel 100 is defined with a bending area 101 and a non-bending area 102, which includes: a substrate 1, a semiconductor device layer 2, an insulating layer 3, a source and drain layer 4, and a flat Layer 5, pixel definition layer 6, and support pillar 7.
  • the semiconductor device layer 2 is arranged on the substrate 1.
  • the semiconductor device layer 2 includes: an active layer, a gate insulating layer, and a gate layer.
  • the active layer is disposed on the substrate; the gate insulating layer is disposed on the active layer; the gate layer is disposed on the gate insulating layer; details are not described herein again.
  • the insulating layer 3 is arranged on the semiconductor device layer 2; specifically, the insulating layer 3 is arranged on the gate layer.
  • the insulating layer 3 mainly functions as an insulation, preventing the source and drain layer 4 from directly contacting the gate layer in the semiconductor device layer 2 to form a short circuit, which affects the display of the display panel 100.
  • the source-drain layer 4 is disposed on the insulating layer 3; the flat layer 5 is disposed on the source-drain layer 4; the pixel definition layer 6 is disposed on the flat layer 5; the support The pillar 7 is arranged on the pixel definition layer 6.
  • the source-drain layer 4 of the non-bending area 102 includes a plurality of metal traces 41 spaced apart from each other.
  • the source and drain layers 4 of the bending area 101 are provided with a groove 8 at a position corresponding to the metal trace 41, and the groove 8 is filled with a conductive material 9 .
  • the groove 8 penetrates the pixel definition layer 6 and the flat layer 5 to the source and drain layer 4.
  • the metal trace 41 is connected through the conductive material 9, so that the metal trace 41 in the bending area 101 does not need to consider the stress balance, thereby reducing the bending radius, reducing the frame width, increasing the screen-to-body ratio, and ultimately bringing better customers Visual experience.
  • the groove 8 can also penetrate the pixel definition layer 6, the flat layer 5, the source and drain layer 4, the insulating layer 3, the semiconductor device layer 2, and the substrate 1 from top to bottom, and the groove 8
  • the groove 8 is filled with a conductive material 9 so that the metal trace 41 can also be connected, so that the metal trace 41 in the bending area 101 does not need to consider the stress balance problem, thereby reducing the bending radius, reducing the frame width, and increasing the screen-to-body ratio , And ultimately bring better visual experience to customers.
  • the groove 8 is formed by one or more of laser, wet etching, and dry etching.
  • the wet etching is a pure chemical reaction process, which refers to the use of a chemical reaction between the solution and the pre-etched material to remove the part that is not masked by the masking film material to achieve the purpose of etching. It has the advantages of good selectivity, good repeatability, high production efficiency, simple equipment and low cost.
  • dry etching methods including: sputtering and ion beam milling, plasma etching (Plasma Etching), high-pressure plasma etching, high-density plasma (HDP) etching, reactive ion etching (RIE). It has the advantages of good anisotropy, high selection ratio, controllability, flexibility, good repeatability, safe operation of thin lines, easy automation, no chemical waste, no pollution in the treatment process, and high cleanliness.
  • the conductive material 9 includes one or more of conductive ink, graphene dispersion, and polyaniline solution.
  • the conductive ink is mainly a paste ink made of conductive materials (gold, silver, copper and carbon) dispersed in a binder, commonly known as paste ink.
  • the display panel 100 of this embodiment further includes a backing plate 10, and the backing plate 10 is disposed on the side of the substrate 1 away from the source and drain layer 4.
  • the shape of the contact side surface of the backing plate 10 and the substrate 1 after bending is rectangular.
  • the groove 8 can penetrate through the pixel definition layer 6, the flat layer 5 and reach the source and drain layer 4, and then the groove 8 is filled with conductive material, so that the metal trace 41 can be connected, so that the metal trace 41 can be connected.
  • the metal trace 41 in the bending area 101 does not need to consider the stress balance problem, thereby reducing the bending radius, reducing the frame width, increasing the screen-to-body ratio, and ultimately bringing a better visual experience to customers.
  • conductive bridges 11 are provided at intervals in the position of the backing plate 10 corresponding to the groove 8.
  • the groove 8 should penetrate the pixel definition layer 6, the planarization layer 5, the source and drain layer 4, the insulating layer 3, the semiconductor device layer 2, and the substrate 1 from top to bottom. Otherwise, the conductive bridge 11 cannot conduct electricity.
  • the material 9 works together to achieve the effect of connecting the metal trace 41. Therefore, the metal trace 41 can be better connected through the conductive bridge 11, and the phenomenon that the thickness of the metal trace 41 is too low can prevent the conductive material 9 from being connected to the metal trace 41.
  • the conductive bridge 11 is formed by one or more of 3D printing technology and electroplating.
  • the 3D printing technology is a kind of rapid prototyping technology. It is based on a digital model file, using powdered metal or plastic and other bondable materials to construct objects by stacking and accumulating layer by layer (ie "Layered Modeling Method").
  • the most prominent advantage of 3D printing technology is that it can directly generate parts of any shape from computer graphics data without machining or any molds, thereby greatly shortening the product development cycle, increasing productivity and reducing production costs.
  • the electroplating is a process in which a thin layer of other metals or alloys are plated on the surface of some metals using the principle of electrolysis.
  • Electroplating can enhance the corrosion resistance of metals (corrosion-resistant metals are mostly used for coating metals), increase hardness, prevent abrasion, improve conductivity, smoothness, heat resistance and surface aesthetics.
  • the difference between this embodiment and Embodiment 2 is that the display panel 100 further includes a backing plate 10, and the backing plate 10 is disposed on the substrate 1 away from the source and drain layers. 4 side.
  • the shape of the contact side surface of the backing plate 10 and the base plate 1 after being bent is an arc shape.
  • the groove 8 can penetrate through the pixel definition layer 6, the flat layer 5 and reach the source and drain layer 4, and then the groove 8 is filled with conductive material, so that the metal trace 41 can be connected, so that the metal trace 41 can be connected.
  • the metal trace 41 in the bending area 101 does not need to consider the stress balance problem, thereby reducing the bending radius, reducing the frame width, increasing the screen-to-body ratio, and ultimately bringing a better visual experience to customers.
  • the backing plate 10 is provided with conductive bridges 11 at intervals corresponding to the positions of the grooves 8. At this time, the grooves 8 should penetrate the pixel definition layer from top to bottom. 6.
  • the conductive bridge 11 can better connect the metal trace 41 to prevent the phenomenon that the conductive material 9 cannot connect to the metal trace 41 because the thickness of the metal trace 41 is too low.

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Abstract

一种显示面板（100），一方面，通过在弯折区（101）的源漏极层（4）对应于金属走线（41）的位置处设有凹槽（8），凹槽（8）内填充有导电材料（9），通过导电材料（9）连接金属走线（41），从而可以使弯折区（101）的金属走线（41）不用考虑应力平衡问题，从而降低弯折半径，降低边框宽度，提高屏占比，最终给客户带来更好的视觉体验；另一方面，还通过设置垫板（10），并在垫板（10）对应于凹槽（8）的位置间隔设有导电桥（11），通过导电桥（11）能够更好的连接金属走线（41），防止金属走线（41）厚度太低导致导电材料（9）无法连通金属走线（41）的现象发生。

Description

一种显示面板
本申请要求于2019年10月12日提交中国专利局、申请号为201910966960.6、发明名称为“一种显示面板”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示技术领域，具体涉及一种显示面板。
 背景技术
有机发光显示装置(英文全称：Organic Light-Emitting Diode, 简称OLED)又称为有机电激光显示装置、有机发光半导体。OLED的工作原理是：当电力供应至适当电压时，正极空穴与阴极电荷就会在发光层中结合，在库伦力的作用下以一定几率复合形成处于激发态的激子（电子-空穴对），而此激发态在通常的环境中是不稳定的，激发态的激子复合并将能量传递给发光材料，使其从基态能级跃迁为激发态，激发态能量通过辐射驰豫过程产生光子，释放出光能，产生光亮，依其配方不同产生红、绿和蓝RGB三基色，构成基本色彩。
OLED具有电压需求低、省电效率高、反应快、重量轻、厚度薄，构造简单，成本低、广视角、几乎无穷高的对比度、较低耗电、极高反应速度等优点，已经成为当今最重要的显示技术之一。
 技术问题
随着显示技术的发展，显示面板的窄边框和高屏占比已经成为一大趋势。所谓屏占比就是屏幕面积与整机面积的比例，较高的屏占比能够给用户带来更好的视觉体验。为了实现显示面板的窄边框和高屏占比，需要将显示面板的非显示区向与出光面相背的一侧进行弯折。而现有技术中，对弯折区进行弯折时，弯折半径不可控，容易导致弯折区内金属走线断裂，降低了显示面板的可靠性。因此需要寻求一种新型的显示面板以解决上述问题。
 技术解决方案
本发明的一个目的是提供一种显示面板，其能够解决现有的显示面板对弯折区进行弯折时，存在的弯折半径不可控，容易导致弯折区内金属走线断裂，降低了显示面板的可靠性等问题。
为了解决上述问题，本发明的一个实施方式提供了一种显示面板，定义有弯折区和非弯折区，其中包括：基板、绝缘层、源漏极层。其中所述绝缘层设置于所述基板上；所述源漏极层设置于所述绝缘层上；其中所述非弯折区的源漏极层包括若干条相互间隔设置的金属走线；其中所述弯折区的源漏极层在对应于所述金属走线的位置处设有凹槽，所述凹槽内填充有导电材料。
进一步的，其中所述显示面板还包括半导体器件层，所述半导体器件层设置于所述基板上。其中所述半导体器件层包括：有源层、栅极绝缘层、栅极层。其中所述有源层设置于所述基板上；所述栅极绝缘层设置于所述有源层上；所述栅极层设置于所述栅极绝缘层上；其中所述绝缘层设置于所述栅极层上。
进一步的，其中所述显示面板还包括：平坦层，所述平坦层设置于所述源漏极层上；以及像素定义层，所述像素定义层设置于所述平坦层上。其中所述凹槽贯穿所述像素定义层、平坦层直至所述源漏极层中。
进一步的，其中所述显示面板还包括垫板，所述垫板设置于所述基板远离所述源漏极层的一侧。
进一步的，其中所述垫板对应于所述凹槽的位置间隔设有导电桥，所述凹槽贯穿所述像素定义层、平坦层、源漏极层、绝缘层直至贯穿所述基板。
进一步的，其中所述导电桥通过3D打印技术、电镀方式中的一种或多种制备形成。
进一步的，其中所述垫板与弯折后的所述基板的接触面的侧面形状包括弧形或者矩形。
进一步的，其中所述凹槽通过激光、湿法蚀刻、干法蚀刻中的一种或多种制备形成。
进一步的，其中所述导电材料包括导电油墨、石墨烯分散液、聚苯胺溶液中的一种或多种。
进一步的，其中所述导电材料通过电液式喷墨技术使用负向电压打印填充所述凹槽。
 有益效果
本发明涉及一种显示面板，一方面，本发明通过在所述弯折区的源漏极层对应于所述金属走线的位置处设有凹槽，所述凹槽内填充有导电材料。通过导电材料连接金属走线，从而可以使弯折区域的金属走线不用考虑应力平衡问题，从而降低弯折半径，降低边框宽度，提高屏占比，最终给客户带来更好的视觉体验；另一方面，本发明还通过设置垫板，并在所述垫板对应于所述凹槽的位置间隔设有导电桥，通过导电桥能够更好的连接金属走线，防止金属走线厚度太低导致导电材料无法连通金属走线的现象发生。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例1的显示面板结构示意图。
图2是本发明实施例1的显示面板结构示意图的A-A剖面图。
图3是本发明源漏极层的平面示意图。
图4是本发明实施例2的显示面板的结构示意图。
图5是本发明实施例2的显示面板结构示意图的B-B剖面图。
图6是本发明实施例2的垫板结构示意图。
图7是本发明实施例2的显示面板结构示意图的C-C剖面图。
图8是本发明实施例3的显示面板的结构示意图。
图9是本发明实施例3的显示面板结构示意图的D-D剖面图。
图10是本发明实施例3的垫板结构示意图。
图中部件标识如下：
100、显示面板             101、弯折区
102、非弯折区
1、基板                   2、半导体器件层
3、绝缘层                 4、源漏极层
5、平坦层                 6、像素定义层
7、支撑柱                 8、凹槽
9、导电材料               10、垫板
11、导电桥                41、金属走线
 本发明的实施方式
以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的 ，本发明并没有限定每个组件的尺寸和厚度。
当某些组件，被描述为“在”另一组件“上”时，所述组件可以直接置于所述另一组件上；也可以存在一中间组件，所述组件置于所述中间组件上，且所述中间组件置于另一组件上。当一个组件被描述为“安装至”或“连接至”另一组件时，二者可以理解为直接“安装”或“连接”，或者一个组件通过一中间组件“安装至”或“连接至”另一个组件。
实施例1
如图1、图2所示，一种显示面板100，定义有弯折区101和非弯折区102，其中包括：基板1、半导体器件层2、绝缘层3、源漏极层4、平坦层5、像素定义层6以及支撑柱7。
其中所述半导体器件层2设置于所述基板1上。具体的，所述半导体器件层2包括：有源层、栅极绝缘层、栅极层。其中所述有源层设置于所述基板上；所述栅极绝缘层设置于所述有源层上；所述栅极层设置于所述栅极绝缘层上；在此不再赘述。
其中所述绝缘层3设置于所述半导体器件层2上；具体的，所述绝缘层3设置于所述栅极层上。所述绝缘层3主要是起绝缘作用，防止源漏极层4与半导体器件层2中的栅极层直接接触形成短路，影响显示面板100的显示。
所述源漏极层4设置于所述绝缘层3上；所述平坦层5设置于所述源漏极层4上；所述像素定义层6设置于所述平坦层5上；所述支撑柱7设置于所述像素定义层6上。
如图3所示，所述非弯折区102的源漏极层4包括若干条相互间隔设置的金属走线41。
如图1、图2所示，所述弯折区101的源漏极层4在对应于所述金属走线41的位置处设有凹槽8，所述凹槽8内填充有导电材料9。所述凹槽8贯穿所述像素定义层6、平坦层5直至所述源漏极层4中。通过导电材料9连接金属走线41，从而可以使弯折区101的金属走线41不用考虑应力平衡问题，从而降低弯折半径，降低边框宽度，提高屏占比，最终给客户带来更好的视觉体验。
实际上，所述凹槽8也可以由上至下贯穿所述像素定义层6、平坦层5、源漏极层4、绝缘层3、半导体器件层2以及所述基板1，在所述凹槽8中填充导电材料9，由此同样可以连接金属走线41，从而可以使弯折区101的金属走线41不用考虑应力平衡问题，从而降低弯折半径，降低边框宽度，提高屏占比，最终给客户带来更好的视觉体验。
具体的，其中所述凹槽8通过激光、湿法蚀刻、干法蚀刻中的一种或多种制备形成。其中湿法刻蚀是一个纯粹的化学反应过程，是指利用溶液与预刻蚀材料之间的化学反应来去除未被掩蔽膜材料掩蔽的部分而达到刻蚀目的。其具有选择性好、重复性好、生产效率高、设备简单、成本低等优点。所述干法刻蚀方式有很多，具体的包括:溅射与离子束铣蚀，等离子刻蚀(Plasma Etching)，高压等离子刻蚀，高密度等离子体(HDP)刻蚀，反应离子刻蚀(RIE)。其具有各向异性好，选择比高，可控性、灵活性、重复性好，细线条操作安全，易实现自动化，无化学废液，处理过程未引入污染，洁净度高等优点。
其中所述导电材料9包括导电油墨、石墨烯分散液、聚苯胺溶液中的一种或多种。所述导电油墨主要是用导电材料(金、银、铜和碳)分散在连结料中制成的糊状油墨，俗称糊剂油墨。
实施例2
如图4、图 5所示，本实施例所述的显示面板100还包括垫板10，所述垫板10设置于所述基板1远离所述源漏极层4的一侧。本实施例中所述垫板10与所述基板1弯折后的接触侧面形状为矩形。其中所述凹槽8可以贯穿所述像素定义层6、平坦层5直至所述源漏极层4中，然后在凹槽8中填充导电材料，由此可以连接金属走线41，从而可以使弯折区101的金属走线41不用考虑应力平衡问题，从而降低弯折半径，降低边框宽度，提高屏占比，最终给客户带来更好的视觉体验。
如图6、图7所示，更优选的，其中所述垫板10对应于所述凹槽8的位置间隔设有导电桥11。此时所述凹槽8应该自上而下贯穿所述像素定义层6、平坦层5、源漏极层4、绝缘层3、半导体器件层2以及基板1，否则，导电桥11无法与导电材料9共同合作，达到连接金属走线41的效果。由此可以通过导电桥11能够更好的连接金属走线41，防止金属走线41厚度太低导致导电材料9无法连通金属走线41的现象发生。
其中所述导电桥11通过3D打印技术、电镀方式中的一种或多种制备形成。所述3D打印技术，属于快速成形技术的一种，它是一种数字模型文件为基础，运用粉末状金属或塑料等可粘合材料，通过逐层堆叠累积的方式来构造物体的技术（即“积层造形法”）。3D打印技术最突出的优点是无需机械加工或任何模具，就能直接从计算机图形数据中生成任何形状的零件，从而极大地缩短产品的研制周期，提高生产率和降低生产成本。所述电镀(Electroplating)就是利用电解原理在某些金属表面上镀上一薄层其它金属或合金的过程，是利用电解作用使金属或其它材料制件的表面附着一层金属膜的工艺从而起到防止金属氧化(如锈蚀)，提高耐磨性、导电性、反光性、抗腐蚀性(硫酸铜等)及增进美观等作用。电镀能增强金属的抗腐蚀性(镀层金属多采用耐腐蚀的金属)、增加硬度、防止磨耗、提高导电性、光滑性、耐热性和表面美观。
实施例3
如图8、图9所示，本实施例与实施例2不同之处在于：所述显示面板100还包括垫板10，所述垫板10设置于所述基板1远离所述源漏极层4的一侧。本实施例中所述垫板10与所述基板1弯折后的接触侧面形状为弧形。其中所述凹槽8可以贯穿所述像素定义层6、平坦层5直至所述源漏极层4中，然后在凹槽8中填充导电材料，由此可以连接金属走线41，从而可以使弯折区101的金属走线41不用考虑应力平衡问题，从而降低弯折半径，降低边框宽度，提高屏占比，最终给客户带来更好的视觉体验。
如图10所示，更优选的，其中所述垫板10对应于所述凹槽8的位置间隔设有导电桥11，此时所述凹槽8应该自上而下贯穿所述像素定义层6、平坦层5、源漏极层4、绝缘层3、半导体器件层2以及基板1，否则，导电桥11无法与导电材料9共同合作，达到连接金属走线41的效果。通过导电桥11能够更好的连接金属走线41，防止金属走线41厚度太低导致导电材料9无法连通金属走线41的现象发生。
以上对本发明所提供的显示面板进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明，但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种显示面板，定义有弯折区和非弯折区，其中包括：
    基板；
    绝缘层，所述绝缘层设置于所述基板上；
    源漏极层，所述源漏极层设置于所述绝缘层上；
    其中所述非弯折区的源漏极层包括若干条相互间隔设置的金属走线；
    其中所述弯折区的源漏极层对应于所述金属走线的位置处设有凹槽，所述凹槽内填充有导电材料。
  2. 根据权利要求1所述的显示面板，其中还包括：半导体器件层，所述半导体器件层设置于所述基板上；
    所述半导体器件层包括：
    有源层，所述有源层设置于所述基板上；
    栅极绝缘层，所述栅极绝缘层设置于所述有源层上；
    栅极层，所述栅极层设置于所述栅极绝缘层上；
    其中所述绝缘层设置于所述栅极层上。
  3. 根据权利要求1所述的显示面板，其中还包括：
    平坦层，所述平坦层设置于所述源漏极层上；以及
    像素定义层，所述像素定义层设置于所述平坦层上；
    其中所述凹槽贯穿所述像素定义层、平坦层直至所述源漏极层中。
  4. 根据权利要求3所述的显示面板，其中还包括垫板，所述垫板设置于所述基板远离所述源漏极层的一侧。
  5. 根据权利要求4所述的显示面板，其中所述垫板对应于所述凹槽的位置间隔设有导电桥，所述凹槽贯穿所述像素定义层、平坦层、源漏极层、绝缘层直至贯穿所述基板。
  6. 根据权利要求5所述的显示面板，其中所述导电桥通过3D打印技术、电镀方式中的一种或多种制备形成。
  7. 根据权利要求4所述的显示面板，其中所述垫板与弯折后的所述基板的接触面的侧面形状包括弧形或者矩形。
  8. 根据权利要求1所述的显示面板，其中所述凹槽通过激光、湿法蚀刻、干法蚀刻中的一种或多种制备形成。
  9. 根据权利要求1所述的显示面板，其中所述导电材料包括导电油墨、石墨烯分散液、聚苯胺溶液中的一种或多种。
  10. 根据权利要求1所述的显示面板，其中所述导电材料通过电液式喷墨技术使用负向电压打印填充所述凹槽。
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