WO2018152895A1 - 发光二极管显示器及其制作方法 - Google Patents

发光二极管显示器及其制作方法 Download PDF

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WO2018152895A1
WO2018152895A1 PCT/CN2017/076861 CN2017076861W WO2018152895A1 WO 2018152895 A1 WO2018152895 A1 WO 2018152895A1 CN 2017076861 W CN2017076861 W CN 2017076861W WO 2018152895 A1 WO2018152895 A1 WO 2018152895A1
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layer
anode
cathode
light emitting
disposed
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PCT/CN2017/076861
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English (en)
French (fr)
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韩佰祥
吕伯彦
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深圳市华星光电技术有限公司
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Priority to US15/519,839 priority Critical patent/US10276550B2/en
Publication of WO2018152895A1 publication Critical patent/WO2018152895A1/zh

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    • H—ELECTRICITY
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    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
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    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
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    • H10K50/00—Organic light-emitting devices
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    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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    • H01L33/52—Encapsulations

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a light emitting diode display and a method of fabricating the same.
  • LED display Light Emitting Diode display
  • LCD Liquid Crystal Display
  • PDP Plasma Display Panel
  • LED display Light Emitting Diode display
  • the LED display has the advantages of high luminous efficiency, long life and low energy consumption, and has been widely applied to outdoor display cards and large outdoor billboards, and also exists in home television or computer displays.
  • the LED display is a display screen for displaying various information such as text, graphics, images, animations, quotes, videos, and video signals by controlling the display mode of the semiconductor light-emitting diodes.
  • LEDs were only used as miniature indicators, and they were used in high-end equipment such as computers, audio and video recorders. With the continuous advancement of large-scale integrated circuits and computer technology, LED displays are rapidly emerging and gradually expanding into stock market stock machines. Digital cameras, PDAs, and mobile phones.
  • LED display integrates microelectronic technology, computer technology and information processing, with its bright color, wide dynamic range, high brightness, high definition, low working voltage, low power consumption, long life, impact resistance, colorful and working.
  • the advantages of stability and reliability have become the most advantageous next-generation display media.
  • LED display has been widely used in large squares, commercials, stadiums, information dissemination, news release, securities trading, etc., to meet the needs of different environments.
  • the light emitting diode display includes a base substrate 100, a thin film transistor (TFT) layer 200 disposed on the base substrate 100, and a first planar layer 300 on the TFT layer 200, a first anode 400 disposed on the first planar layer 300, and a second planar layer 500 disposed on the first anode 400 and the first planar layer 300 a first via 510 disposed on the second planar layer 500 and exposing the first anode 400, and a light emitting diode 600 disposed in the first via 510, disposed in the first via 510 is located around the light emitting diode 600 and located on the first anode 400 a cathode isolation layer 720, and a first cathode 730 disposed on the cathode isolation layer 720, the light emitting diode 600 and the second planar layer 500;
  • TFT thin film transistor
  • the light emitting diode 600 includes a light emitting body 610 and a second anode 620 and a second cathode 630 respectively connected to the two ends of the light emitting body 610.
  • the second anode 620 is connected to the first anode 400.
  • the second cathode 630 is in contact with the first cathode 730, and the first anode 400 and the first cathode 730 are separated by the cathode isolation layer 720.
  • the second flat layer 500 where the light-emitting diode 600 is located is generally prepared by using a transparent organic photoresist material, the second flat layer 500 cannot be The divergent light emitted by the light emitting diode 600 is gathered and reflected, thereby causing light leakage, reducing light utilization efficiency, and improving display energy consumption.
  • An object of the present invention is to provide a method for fabricating a light-emitting diode display, which can improve the light utilization efficiency of the light-emitting diode and improve display quality.
  • Another object of the present invention is to provide an LED display, which has better light utilization efficiency and better display quality.
  • the present invention first provides a method for fabricating an LED display, comprising the following steps:
  • Step 1 providing a TFT backplane, the TFT backplane includes a base substrate, a TFT layer disposed on the base substrate, a flat layer disposed on the TFT layer, and a flat layer disposed on the flat layer a first via; the TFT layer includes a drain corresponding to a lower portion of the first via;
  • Step 2 forming a first anode on the flat layer, the first anode covering the first via hole and contacting the drain through the first via hole, the first anode is a reflection electrode;
  • Step 3 providing a light emitting diode, the light emitting diode comprising a light emitting body and a second anode and a second cathode respectively connected to the two ends of the light emitting body;
  • Step 4 forming a cathode isolation layer around the light emitting diode on the first anode and the flat layer, a portion of the cathode isolation layer located in the first via hole completely covering the second anode and at least Exposing a top end of the second cathode;
  • Step 5 forming a first cathode on the cathode isolation layer and the light emitting diode, the first cathode is in contact with the second cathode, and the cathode is isolated by the cathode between the first cathode and the first anode The layers are isolated.
  • the TFT layer includes a gate electrode disposed on the substrate substrate, a gate protection layer disposed on the gate and the substrate, an active layer disposed on the gate protection layer, and An etch stop layer on the active layer and the gate protection layer, and a source and a drain provided on the etch stop layer, wherein the etch stop layer is respectively provided corresponding to the active layer a second via hole at both ends, wherein the source and the drain are respectively in contact with both ends of the active layer through the second via hole.
  • the material of the first anode is a metal.
  • the material of the first anode includes one or more of molybdenum, aluminum, copper, titanium, and chromium.
  • the material of the cathode isolation layer is an organic insulating material; the first cathode is a transparent electrode.
  • the present invention also provides a light emitting diode display comprising a base substrate, a TFT layer disposed on the base substrate, a flat layer disposed on the TFT layer, and a first via disposed on the flat layer a first anode disposed on the flat layer and covering the first via hole, a light emitting diode disposed in the first via hole and located on the first anode, and disposed on the first anode And a cathode isolation layer on the flat layer and located around the light emitting diode, and a first cathode disposed on the cathode isolation layer and the light emitting diode;
  • the TFT layer includes a drain corresponding to a lower portion of the first via hole, and the first anode is in contact with the drain through the first via hole;
  • the light emitting diode includes a light emitting lamp body and a second anode and a second cathode respectively connected to two ends of the light emitting lamp body, the second anode is connected to the first anode, and the second cathode is connected to the first cathode a cathode contact;
  • a portion of the cathode isolation layer located in the first via hole completely covers the second anode and at least exposes a top end of the second cathode, and the first anode and the first cathode pass between The cathode isolation layer is isolated;
  • the first anode is a reflective electrode.
  • the TFT layer includes a gate electrode disposed on the substrate substrate, a gate protection layer disposed on the gate and the substrate, an active layer disposed on the gate protection layer, and An etch stop layer on the active layer and the gate protection layer, and a source and a drain provided on the etch stop layer, wherein the etch stop layer is respectively provided corresponding to the active layer a second via hole at both ends, wherein the source and the drain are respectively in contact with both ends of the active layer through the second via hole.
  • the material of the first anode is a metal.
  • the material of the first anode includes one or more of molybdenum, aluminum, copper, titanium, and chromium.
  • the material of the cathode isolation layer is an organic insulating material; the first cathode is a transparent electrode.
  • the present invention also provides a light emitting diode display comprising a base substrate, a TFT layer disposed on the base substrate, a flat layer disposed on the TFT layer, and a first via disposed on the flat layer a first anode disposed on the flat layer and covering the first via hole, disposed on the first a light emitting diode disposed in the via hole and located on the first anode, a cathode isolation layer disposed on the first anode and the flat layer and located around the light emitting diode, and being disposed on the cathode isolation layer and the light emitting diode First cathode
  • the TFT layer includes a drain corresponding to a lower portion of the first via hole, and the first anode is in contact with the drain through the first via hole;
  • the light emitting diode includes a light emitting lamp body and a second anode and a second cathode respectively connected to two ends of the light emitting lamp body, the second anode is connected to the first anode, and the second cathode is connected to the first cathode a cathode contact;
  • a portion of the cathode isolation layer located in the first via hole completely covers the second anode and at least exposes a top end of the second cathode, and the first anode and the first cathode pass between The cathode isolation layer is isolated;
  • the first anode is a reflective electrode
  • the TFT layer includes a gate electrode disposed on the substrate substrate, a gate protection layer disposed on the gate and the substrate, an active layer disposed on the gate protection layer, An etch stop layer disposed on the active layer and the gate protection layer, and a source and a drain disposed on the etch stop layer, wherein the etch stop layer is respectively provided corresponding to the a second via at both ends of the source layer, wherein the source and the drain are respectively in contact with both ends of the active layer through the second via;
  • the material of the first anode is metal
  • a light-emitting diode display can provide a light-emitting diode located in a first via hole by utilizing a reflection characteristic of the first anode by providing a first anode covering the first via hole and having a reflective property on the flat layer. The divergent light is gathered and reflected to improve light utilization and improve display quality.
  • FIG. 1 is a schematic structural view of a conventional light emitting diode display
  • FIG. 2 is a flow chart of a method of fabricating an LED display of the present invention
  • step 1 is a schematic diagram of step 1 of a method of fabricating an LED display of the present invention
  • step 2 is a schematic diagram of step 2 of a method for fabricating an LED display of the present invention
  • step 3 is a schematic diagram of step 3 of a method for fabricating an LED display of the present invention.
  • step 4 is a schematic diagram of step 4 of a method of fabricating an LED display of the present invention.
  • FIG. 7 is a schematic view showing a step 5 of a method for fabricating an LED display of the present invention and a schematic structural view of the LED display of the present invention.
  • the present invention first provides a method for fabricating an LED display, comprising the following steps:
  • a TFT backplane 80 is provided.
  • the TFT backplane 80 includes a base substrate 10, a TFT layer 20 disposed on the base substrate 10, and a TFT layer 20 disposed on the TFT layer 20. a flat layer 30 and a first via 31 disposed on the planar layer 30; the TFT layer 20 includes a drain 26 disposed under the first via 31.
  • the TFT layer 20 includes a gate electrode 21 disposed on the substrate substrate 10, a gate protection layer 22 disposed on the gate electrode 21 and the substrate substrate 10, and the gate protection layer An active layer 23 on the layer 22, an etch stop layer 24 disposed on the active layer 23 and the gate protection layer 22, and a source 25 and a drain 26 disposed on the etch stop layer 24.
  • a second via 242 corresponding to each end of the active layer 23 is disposed on the etch stop layer 24, and the source 25 and the drain 26 pass through the second via 242 and the active Both ends of layer 23 are in contact.
  • Step 2 as shown in FIG. 4, forming a first anode 40 on the flat layer 30, the first anode 40 covering the first via hole 31 and passing through the first via hole 31 and the drain
  • the poles 26 are in contact, and the first anode 40 is a reflective electrode.
  • the material of the first anode 40 is metal.
  • the material of the first anode 40 includes one or more of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), and chromium (Cr).
  • Mo molybdenum
  • Al aluminum
  • Cu copper
  • Ti titanium
  • Cr chromium
  • Step 3 as shown in Figure 5, providing a light-emitting diode 60, the light-emitting diode 60 includes a light-emitting lamp body 61 and a second anode 62 and a second cathode 63 respectively connected to the two ends of the light-emitting lamp body 61;
  • the second anode 62 of the light emitting diode 60 is connected to the first anode 40 of the TFT back plate 80 by soldering.
  • the first anode 40 is a reflective electrode, the divergent light emitted by the light emitting diode 60 can be gathered and reflected to improve light utilization efficiency.
  • Step 4 as shown in FIG. 6, a cathode isolation layer 72 around the light emitting diode 60 is formed on the first anode 40 and the flat layer 30, and the cathode isolation layer 72 is located in the first via hole 31.
  • the portion completely covers the second anode 62 and at least exposes the top end of the second cathode 63.
  • the cathode isolation layer 72 is an insulating material, so that the first anode 40 can be isolated from the subsequently prepared first cathode 73 to prevent short circuits from being formed.
  • the step 4 may form the cathode isolation layer 72 by inkjet printing, or may form the cathode isolation layer 72 by an organic material coating process in combination with a yellow light process.
  • the material of the cathode isolation layer 72 is an organic insulating material.
  • Step 5 as shown in FIG. 7, a first cathode 73 is formed on the cathode isolation layer 72 and the light emitting diode 60, and the first cathode 73 is in contact with the second cathode 63, and the first cathode 73 is The first anodes 40 are isolated by the cathode isolation layer 72.
  • the first cathode 73 is formed by an evaporation method.
  • the first cathode 73 is a transparent electrode.
  • the material of the first cathode 73 is a transparent conductive metal oxide such as indium tin oxide (ITO).
  • ITO indium tin oxide
  • the light-emitting diode display of the present invention constitutes a top-emitting light-emitting diode display, and the side of the first cathode 73 is a light-emitting surface.
  • the reflection characteristic of the first anode 40 can be utilized in the first via 31.
  • the divergent light emitted by the light-emitting diode 60 is gathered and reflected to improve light utilization and improve display quality.
  • the present invention further provides an LED display including a base substrate 10 , a TFT layer 20 disposed on the base substrate 10 , and a TFT layer disposed on the TFT layer.
  • a flat layer 30 on the top layer 30 a first via hole 31 disposed on the flat layer 30, and a first anode 40 disposed on the flat layer 30 and covering the first via hole 31.
  • a light emitting diode 60 in the first via hole 31 and located on the first anode 40 a cathode isolation layer 72 disposed on the first anode 40 and the flat layer 30 and located around the light emitting diode 60, And a first cathode 73 disposed on the cathode isolation layer 72 and the light emitting diode 60;
  • the TFT layer 20 includes a drain 26 disposed under the first via 31, and the first anode 40 is in contact with the drain 26 through the first via 31;
  • the light emitting diode 60 includes a light emitting body 61 and a second anode 62 and a second cathode 63 respectively connected to the two ends of the light emitting body 61.
  • the second anode 62 is connected to the first anode 40.
  • the second cathode 63 is in contact with the first cathode 73;
  • a portion of the cathode isolation layer 72 located in the first via 31 completely covers the second anode 62 and at least exposes a top end of the second cathode 63, the first anode 40 and the first
  • the cathodes 73 are separated by the cathode isolation layer 72;
  • the first anode 40 is a reflective electrode, and can collect and reflect the divergent light emitted by the LED 60 to improve light utilization.
  • the TFT layer 20 includes a gate electrode 21 disposed on the substrate substrate 10, a gate protection layer 22 disposed on the gate electrode 21 and the substrate substrate 10, and the gate protection layer An active layer 23 on the layer 22, an etch stop layer 24 disposed on the active layer 23 and the gate protection layer 22, and a source 25 and a drain 26 disposed on the etch stop layer 24.
  • a second via 242 corresponding to each end of the active layer 23 is disposed on the etch stop layer 24, and the source 25 and the drain 26 pass through the second via 242 and the active Both ends of layer 23 are in contact.
  • the material of the first anode 40 is metal.
  • the material of the first anode 40 includes one or more of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), and chromium (Cr).
  • Mo molybdenum
  • Al aluminum
  • Cu copper
  • Ti titanium
  • Cr chromium
  • the material of the cathode isolation layer 72 is an organic insulating material.
  • the first cathode 73 is a transparent electrode.
  • the material of the first cathode 73 is a transparent conductive metal oxide such as indium tin oxide (ITO).
  • ITO indium tin oxide
  • the light-emitting diode 60 located in the first via 31 can be utilized by the reflection characteristic of the first anode 40.
  • the emitted divergent light is gathered and reflected to improve light utilization and improve display quality.
  • the present invention provides an LED display and a method of fabricating the same.
  • the method for fabricating the LED display of the present invention by forming a first anode covering the first via hole and having a reflective property on the flat layer, the light-emitting diode located in the first via hole can be emitted by utilizing the reflection characteristic of the first anode. The divergent light is gathered and reflected to improve light utilization and improve display quality.
  • the reflection characteristic of the first anode can be utilized to be located in the first via hole. The divergent light emitted by the internal light-emitting diodes is gathered and reflected to improve light utilization and improve display quality.

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Abstract

一种发光二极管显示器及其制作方法。发光二极管显示器的制作方法通过在平坦层（30）上形成包覆第一过孔（31）且具有反射特性的第一阳极（40），可以利用第一阳极的反射特性对位于第一过孔内的发光二极管发出的发散光进行聚拢和反射，提高光线利用率，提升显示品质。发光二极管显示器通过在平坦层上设置包覆第一过孔且具有反射特性的第一阳极，可以利用第一阳极的反射特性对位于第一过孔内的发光二极管发出的发散光进行聚拢和反射，提高光线利用率，提升显示品质。

Description

发光二极管显示器及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种发光二极管显示器及其制作方法。
背景技术
随着科技的进步，市面上已发展出各式各样的显示器产品，如液晶显示器(Liquid Crystal Display，LCD)、电浆显示器(Plasma Display Panel，PDP)及发光二极管显示器(Light Emitting Diode display，LED display)等。其中，发光二极管显示器具有发光效率高、寿命长及低耗能等优点，已普遍应用于户外显示牌与大型户外广告牌，也存在于家用电视或计算机的显示器。
发光二极管显示器是一种通过控制半导体发光二极管的显示方式，用来显示文字、图形、图像、动画、行情、视频、录像信号等各种信息的显示屏幕。
发光二极管的技术进步是扩大市场需求及应用的最大推动力。最初，发光二极管只是作为微型指示灯，在计算机、音响和录像机等高档设备中应用，随着大规模集成电路和计算机技术的不断进步，发光二极管显示器正在迅速崛起，逐渐扩展到证券行情股票机、数码相机、掌上电脑(PDA)以及手机领域。
发光二极管显示器集微电子技术、计算机技术、信息处理于一体，以其色彩鲜艳、动态范围广、亮度高、清晰度高、工作电压低、功耗小、寿命长、耐冲击、色彩艳丽和工作稳定可靠等优点，成为最具优势的新一代显示媒体，发光二极管显示器已广泛应用于大型广场、商业广告、体育场馆、信息传播、新闻发布、证券交易等，可以满足不同环境的需要。
图1为现有的发光二极管显示器的结构示意图，如图1所示，所述发光二极管显示器包括衬底基板100、设于所述衬底基板100上的薄膜晶体管(TFT)层200、设于所述TFT层200上的第一平坦层300、设于所述第一平坦层300上的第一阳极400、设于所述第一阳极400与第一平坦层300上的第二平坦层500、设于所述第二平坦层500上且暴露出所述第一阳极400的第一过孔510、设于所述第一过孔510内的发光二极管600、设于所述第一过孔510内位于所述发光二极管600周围且位于所述第一阳极400上的 阴极隔离层720、以及设于所述阴极隔离层720、发光二极管600及第二平坦层500上的第一阴极730；
所述发光二极管600包括发光灯体610以及分别连接于所述发光灯体610两端的第二阳极620与第二阴极630，所述第二阳极620与所述第一阳极400相连接，所述第二阴极630与所述第一阴极730相接触，并且所述第一阳极400与所述第一阴极730之间通过所述阴极隔离层720隔离开。
上述发光二极管显示器中，由于所述发光二极管600发出的光线具有发散特性，而所述发光二极管600所在的第二平坦层500通常采用透明有机光阻材料制备，因此所述第二平坦层500无法对所述发光二极管600发出的发散光进行聚拢和反射，从而造成光线泄漏，降低光线利用率，且提升显示器能耗。
发明内容
本发明的目的在于提供一种发光二极管显示器的制作方法，能够提高发光二极管的光线利用率，提升显示品质。
本发明的目的还在于提供一种发光二极管显示器，发光二极管的光线利用率较好，具有较好的显示品质。
为实现上述目的，本发明首先提供一种发光二极管显示器的制作方法，包括如下步骤：
步骤1、提供TFT背板，所述TFT背板包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层、及设于所述平坦层上的第一过孔；所述TFT层包括对应于所述第一过孔下方设置的漏极；
步骤2、在所述平坦层上形成第一阳极，所述第一阳极包覆所述第一过孔并通过所述第一过孔与所述漏极相接触，所述第一阳极为反射电极；
步骤3、提供发光二极管，所述发光二极管包括发光灯体以及分别连接于所述发光灯体两端的第二阳极与第二阴极；
将所述发光二极管转移至所述TFT背板的第一过孔内，并且将所述发光二极管的第二阳极与所述TFT背板的第一阳极连接在一起；
步骤4、在所述第一阳极及平坦层上形成位于所述发光二极管周围的阴极隔离层，所述阴极隔离层位于所述第一过孔内的部分完全包覆所述第二阳极并至少暴露出所述第二阴极的顶端；
步骤5、在所述阴极隔离层及发光二极管上形成第一阴极，所述第一阴极与所述第二阴极相接触，所述第一阴极与所述第一阳极之间通过所述阴极隔离层隔离开。
所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极保护层、设于所述栅极保护层上的有源层、设于所述有源层与栅极保护层上的刻蚀阻挡层、以及设于所述刻蚀阻挡层上的源极与漏极，所述刻蚀阻挡层上设有分别对应所述有源层两端的第二过孔，所述源极与漏极分别通过所述第二过孔与所述有源层的两端相接触。
所述第一阳极的材料为金属。
所述第一阳极的材料包括钼、铝、铜、钛、铬中的一种或多种。
所述阴极隔离层的材料为有机绝缘材料；所述第一阴极为透明电极。
本发明还提供一种发光二极管显示器，包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层、设于所述平坦层上的第一过孔、设于所述平坦层上且包覆所述第一过孔的第一阳极、设于所述第一过孔内且位于所述第一阳极上的发光二极管、设于所述第一阳极及平坦层上且位于所述发光二极管周围的阴极隔离层、以及设于所述阴极隔离层及发光二极管上的第一阴极；
所述TFT层包括对应于所述第一过孔下方设置的漏极，所述第一阳极通过所述第一过孔与所述漏极相接触；
所述发光二极管包括发光灯体以及分别连接于所述发光灯体两端的第二阳极与第二阴极，所述第二阳极与所述第一阳极相连接，所述第二阴极与所述第一阴极相接触；
所述阴极隔离层位于所述第一过孔内的部分完全包覆所述第二阳极并至少暴露出所述第二阴极的顶端，所述第一阳极与所述第一阴极之间通过所述阴极隔离层隔离开；
所述第一阳极为反射电极。
所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极保护层、设于所述栅极保护层上的有源层、设于所述有源层与栅极保护层上的刻蚀阻挡层、以及设于所述刻蚀阻挡层上的源极与漏极，所述刻蚀阻挡层上设有分别对应所述有源层两端的第二过孔，所述源极与漏极分别通过所述第二过孔与所述有源层的两端相接触。
所述第一阳极的材料为金属。
所述第一阳极的材料包括钼、铝、铜、钛、铬中的一种或多种。
所述阴极隔离层的材料为有机绝缘材料；所述第一阴极为透明电极。
本发明还提供一种发光二极管显示器，包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层、设于所述平坦层上的第一过孔、设于所述平坦层上且包覆所述第一过孔的第一阳极、设于所述第一 过孔内且位于所述第一阳极上的发光二极管、设于所述第一阳极及平坦层上且位于所述发光二极管周围的阴极隔离层、以及设于所述阴极隔离层及发光二极管上的第一阴极；
所述TFT层包括对应于所述第一过孔下方设置的漏极，所述第一阳极通过所述第一过孔与所述漏极相接触；
所述发光二极管包括发光灯体以及分别连接于所述发光灯体两端的第二阳极与第二阴极，所述第二阳极与所述第一阳极相连接，所述第二阴极与所述第一阴极相接触；
所述阴极隔离层位于所述第一过孔内的部分完全包覆所述第二阳极并至少暴露出所述第二阴极的顶端，所述第一阳极与所述第一阴极之间通过所述阴极隔离层隔离开；
所述第一阳极为反射电极；
其中，所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极保护层、设于所述栅极保护层上的有源层、设于所述有源层与栅极保护层上的刻蚀阻挡层、以及设于所述刻蚀阻挡层上的源极与漏极，所述刻蚀阻挡层上设有分别对应所述有源层两端的第二过孔，所述源极与漏极分别通过所述第二过孔与所述有源层的两端相接触；
其中，所述第一阳极的材料为金属。
本发明的有益效果：本发明提供的一种发光二极管显示器的制作方法，通过在平坦层上形成包覆第一过孔且具有反射特性的第一阳极，可以利用第一阳极的反射特性对位于第一过孔内的发光二极管发出的发散光进行聚拢和反射，提高光线利用率，提升显示品质。本发明提供的一种发光二极管显示器，通过在平坦层上设置包覆第一过孔且具有反射特性的第一阳极，可以利用第一阳极的反射特性对位于第一过孔内的发光二极管发出的发散光进行聚拢和反射，提高光线利用率，提升显示品质。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的发光二极管显示器的结构示意图；
图2为本发明的发光二极管显示器的制作方法的流程图；
图3为本发明的发光二极管显示器的制作方法的步骤1的示意图；
图4为本发明的发光二极管显示器的制作方法的步骤2的示意图；
图5为本发明的发光二极管显示器的制作方法的步骤3的示意图；
图6为本发明的发光二极管显示器的制作方法的步骤4的示意图；
图7为本发明的发光二极管显示器的制作方法的步骤5的示意图暨本发明的发光二极管显示器的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明首先提供一种发光二极管显示器的制作方法，包括如下步骤：
步骤1、如图3所示，提供TFT背板80，所述TFT背板80包括衬底基板10、设于所述衬底基板10上的TFT层20、设于所述TFT层20上的平坦层30、及设于所述平坦层30上的第一过孔31；所述TFT层20包括对应于所述第一过孔31下方设置的漏极26。
具体的，所述TFT层20包括设于所述衬底基板10上的栅极21、设于所述栅极21与衬底基板10上的栅极保护层22、设于所述栅极保护层22上的有源层23、设于所述有源层23与栅极保护层22上的刻蚀阻挡层24、以及设于所述刻蚀阻挡层24上的源极25与漏极26，所述刻蚀阻挡层24上设有分别对应所述有源层23两端的第二过孔242，所述源极25与漏极26分别通过所述第二过孔242与所述有源层23的两端相接触。
步骤2、如图4所示，在所述平坦层30上形成第一阳极40，所述第一阳极40包覆所述第一过孔31并通过所述第一过孔31与所述漏极26相接触，所述第一阳极40为反射电极。
具体的，所述第一阳极40的材料为金属。
优选的，所述第一阳极40的材料包括钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)、铬(Cr)中的一种或多种。
步骤3、如图5所示，提供发光二极管60，所述发光二极管60包括发光灯体61以及分别连接于所述发光灯体61两端的第二阳极62与第二阴极63；
将所述发光二极管60转移至所述TFT背板80的第一过孔31内，并且将所述发光二极管60的第二阳极62与所述TFT背板80的第一阳极40连 接在一起。
具体的，所述步骤3中，通过焊接的方式将所述发光二极管60的第二阳极62与所述TFT背板80的第一阳极40连接在一起。
由于所述第一阳极40为反射电极，因此能够对所述发光二极管60发出的发散光进行聚拢和反射，提高光线利用率。
步骤4、如图6所示，在所述第一阳极40及平坦层30上形成位于所述发光二极管60周围的阴极隔离层72，所述阴极隔离层72位于所述第一过孔31内的部分完全包覆所述第二阳极62并至少暴露出所述第二阴极63的顶端。
所述阴极隔离层72为绝缘材料，因此可以将所述第一阳极40与后续制备的第一阴极73隔离开来，防止形成短路。
具体的，所述步骤4可以采用喷墨打印的方法形成阴极隔离层72，也可以采用有机材料涂布制程结合黄光制程的方法形成阴极隔离层72。
优选的，所述阴极隔离层72的材料为有机绝缘材料。
步骤5、如图7所示，在所述阴极隔离层72及发光二极管60上形成第一阴极73，所述第一阴极73与所述第二阴极63相接触，所述第一阴极73与所述第一阳极40之间通过所述阴极隔离层72隔离开。
具体的，所述步骤5采用蒸镀法形成所述第一阴极73。
具体的，所述第一阴极73为透明电极。
优选的，所述第一阴极73的材料为透明导电金属氧化物，如氧化铟锡(ITO)。
在所述第一阳极40为反射电极，所述第一阴极73为透明电极的情况下，本发明的发光二极管显示器构成顶发光发光二极管显示器，所述第一阴极73一侧为出光面。
上述发光二极管显示器的制作方法，通过在平坦层30上形成包覆第一过孔31且具有反射特性的第一阳极40，可以利用第一阳极40的反射特性对位于第一过孔31内的发光二极管60发出的发散光进行聚拢和反射，提高光线利用率，提升显示品质。
请参阅图7，基于上述发光二极管显示器的制作方法，本发明还提供一种发光二极管显示器，包括衬底基板10、设于所述衬底基板10上的TFT层20、设于所述TFT层20上的平坦层30、设于所述平坦层30上的第一过孔31、设于所述平坦层30上且包覆所述第一过孔31的第一阳极40、设于所述第一过孔31内且位于所述第一阳极40上的发光二极管60、设于所述第一阳极40及平坦层30上且位于所述发光二极管60周围的阴极隔离层72、 以及设于所述阴极隔离层72及发光二极管60上的第一阴极73；
所述TFT层20包括对应于所述第一过孔31下方设置的漏极26，所述第一阳极40通过所述第一过孔31与所述漏极26相接触；
所述发光二极管60包括发光灯体61以及分别连接于所述发光灯体61两端的第二阳极62与第二阴极63，所述第二阳极62与所述第一阳极40相连接，所述第二阴极63与所述第一阴极73相接触；
所述阴极隔离层72位于所述第一过孔31内的部分完全包覆所述第二阳极62并至少暴露出所述第二阴极63的顶端，所述第一阳极40与所述第一阴极73之间通过所述阴极隔离层72隔离开；
所述第一阳极40为反射电极，能够对所述发光二极管60发出的发散光进行聚拢和反射，提高光线利用率。
具体的，所述TFT层20包括设于所述衬底基板10上的栅极21、设于所述栅极21与衬底基板10上的栅极保护层22、设于所述栅极保护层22上的有源层23、设于所述有源层23与栅极保护层22上的刻蚀阻挡层24、以及设于所述刻蚀阻挡层24上的源极25与漏极26，所述刻蚀阻挡层24上设有分别对应所述有源层23两端的第二过孔242，所述源极25与漏极26分别通过所述第二过孔242与所述有源层23的两端相接触。
具体的，所述第一阳极40的材料为金属。
优选的，所述第一阳极40的材料包括钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)、铬(Cr)中的一种或多种。
优选的，所述阴极隔离层72的材料为有机绝缘材料。
具体的，所述第一阴极73为透明电极。
优选的，所述第一阴极73的材料为透明导电金属氧化物，如氧化铟锡(ITO)。
上述发光二极管显示器，通过在平坦层30上设置包覆第一过孔31且具有反射特性的第一阳极40，可以利用第一阳极40的反射特性对位于第一过孔31内的发光二极管60发出的发散光进行聚拢和反射，提高光线利用率，提升显示品质。
综上所述，本发明提供一种发光二极管显示器及其制作方法。本发明的发光二极管显示器的制作方法，通过在平坦层上形成包覆第一过孔且具有反射特性的第一阳极，可以利用第一阳极的反射特性对位于第一过孔内的发光二极管发出的发散光进行聚拢和反射，提高光线利用率，提升显示品质。本发明的发光二极管显示器，通过在平坦层上设置包覆第一过孔且具有反射特性的第一阳极，可以利用第一阳极的反射特性对位于第一过孔 内的发光二极管发出的发散光进行聚拢和反射，提高光线利用率，提升显示品质。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种发光二极管显示器的制作方法，包括如下步骤：
    步骤1、提供TFT背板，所述TFT背板包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层、及设于所述平坦层上的第一过孔；所述TFT层包括对应于所述第一过孔下方设置的漏极；
    步骤2、在所述平坦层上形成第一阳极，所述第一阳极包覆所述第一过孔并通过所述第一过孔与所述漏极相接触，所述第一阳极为反射电极；
    步骤3、提供发光二极管，所述发光二极管包括发光灯体以及分别连接于所述发光灯体两端的第二阳极与第二阴极；
    将所述发光二极管转移至所述TFT背板的第一过孔内，并且将所述发光二极管的第二阳极与所述TFT背板的第一阳极连接在一起；
    步骤4、在所述第一阳极及平坦层上形成位于所述发光二极管周围的阴极隔离层，所述阴极隔离层位于所述第一过孔内的部分完全包覆所述第二阳极并至少暴露出所述第二阴极的顶端；
    步骤5、在所述阴极隔离层及发光二极管上形成第一阴极，所述第一阴极与所述第二阴极相接触，所述第一阴极与所述第一阳极之间通过所述阴极隔离层隔离开。
  2. 如权利要求1所述的发光二极管显示器的制作方法，其中，所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极保护层、设于所述栅极保护层上的有源层、设于所述有源层与栅极保护层上的刻蚀阻挡层、以及设于所述刻蚀阻挡层上的源极与漏极，所述刻蚀阻挡层上设有分别对应所述有源层两端的第二过孔，所述源极与漏极分别通过所述第二过孔与所述有源层的两端相接触。
  3. 如权利要求1所述的发光二极管显示器的制作方法，其中，所述第一阳极的材料为金属。
  4. 如权利要求3所述的发光二极管显示器的制作方法，其中，所述第一阳极的材料包括钼、铝、铜、钛、铬中的一种或多种。
  5. 如权利要求1所述的发光二极管显示器的制作方法，其中，所述阴极隔离层的材料为有机绝缘材料；所述第一阴极为透明电极。
  6. 一种发光二极管显示器，包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层、设于所述平坦层上的第一过孔、设于所述平坦层上且包覆所述第一过孔的第一阳极、设于所述第一过孔内且位于 所述第一阳极上的发光二极管、设于所述第一阳极及平坦层上且位于所述发光二极管周围的阴极隔离层、以及设于所述阴极隔离层及发光二极管上的第一阴极；
    所述TFT层包括对应于所述第一过孔下方设置的漏极，所述第一阳极通过所述第一过孔与所述漏极相接触；
    所述发光二极管包括发光灯体以及分别连接于所述发光灯体两端的第二阳极与第二阴极，所述第二阳极与所述第一阳极相连接，所述第二阴极与所述第一阴极相接触；
    所述阴极隔离层位于所述第一过孔内的部分完全包覆所述第二阳极并至少暴露出所述第二阴极的顶端，所述第一阳极与所述第一阴极之间通过所述阴极隔离层隔离开；
    所述第一阳极为反射电极。
  7. 如权利要求6所述的发光二极管显示器，其中，所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极保护层、设于所述栅极保护层上的有源层、设于所述有源层与栅极保护层上的刻蚀阻挡层、以及设于所述刻蚀阻挡层上的源极与漏极，所述刻蚀阻挡层上设有分别对应所述有源层两端的第二过孔，所述源极与漏极分别通过所述第二过孔与所述有源层的两端相接触。
  8. 如权利要求6所述的发光二极管显示器，其中，所述第一阳极的材料为金属。
  9. 如权利要求8所述的发光二极管显示器，其中，所述第一阳极的材料包括钼、铝、铜、钛、铬中的一种或多种。
  10. 如权利要求6所述的发光二极管显示器，其中，所述阴极隔离层的材料为有机绝缘材料；所述第一阴极为透明电极。
  11. 一种发光二极管显示器，包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的平坦层、设于所述平坦层上的第一过孔、设于所述平坦层上且包覆所述第一过孔的第一阳极、设于所述第一过孔内且位于所述第一阳极上的发光二极管、设于所述第一阳极及平坦层上且位于所述发光二极管周围的阴极隔离层、以及设于所述阴极隔离层及发光二极管上的第一阴极；
    所述TFT层包括对应于所述第一过孔下方设置的漏极，所述第一阳极通过所述第一过孔与所述漏极相接触；
    所述发光二极管包括发光灯体以及分别连接于所述发光灯体两端的第二阳极与第二阴极，所述第二阳极与所述第一阳极相连接，所述第二阴极 与所述第一阴极相接触；
    所述阴极隔离层位于所述第一过孔内的部分完全包覆所述第二阳极并至少暴露出所述第二阴极的顶端，所述第一阳极与所述第一阴极之间通过所述阴极隔离层隔离开；
    所述第一阳极为反射电极；
    其中，所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极保护层、设于所述栅极保护层上的有源层、设于所述有源层与栅极保护层上的刻蚀阻挡层、以及设于所述刻蚀阻挡层上的源极与漏极，所述刻蚀阻挡层上设有分别对应所述有源层两端的第二过孔，所述源极与漏极分别通过所述第二过孔与所述有源层的两端相接触；
    其中，所述第一阳极的材料为金属。
  12. 如权利要求11所述的发光二极管显示器，其中，所述第一阳极的材料包括钼、铝、铜、钛、铬中的一种或多种。
  13. 如权利要求11所述的发光二极管显示器，其中，所述阴极隔离层的材料为有机绝缘材料；所述第一阴极为透明电极。
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102302593B1 (ko) * 2017-07-13 2021-09-15 삼성전자주식회사 발광 소자, 이를 포함하는 패키지, 및 이의 제조 방법
CN107359188A (zh) * 2017-08-28 2017-11-17 惠科股份有限公司 显示面板及其制造方法
WO2020077538A1 (zh) * 2018-10-16 2020-04-23 深圳市汇顶科技股份有限公司 具有薄膜晶体管器件的集成装置及其制备方法
US11367767B2 (en) 2018-11-01 2022-06-21 Boe Technology Group Co., Ltd. Light emitting diode and fabrication method thereof, array substrate and display panel
KR102578350B1 (ko) * 2018-11-27 2023-09-13 엘지디스플레이 주식회사 표시 장치
JP2021026099A (ja) * 2019-08-02 2021-02-22 株式会社ジャパンディスプレイ 表示装置
CN112713166B (zh) * 2019-10-25 2023-02-17 成都辰显光电有限公司 显示面板、电子设备及显示面板的制作方法
CN112242413B (zh) * 2020-10-10 2022-10-04 武汉华星光电技术有限公司 灯板及显示装置
WO2022209823A1 (ja) * 2021-03-30 2022-10-06 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
CN116897383A (zh) * 2021-03-30 2023-10-17 日亚化学工业株式会社 图像显示装置的制造方法和图像显示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1822384A (zh) * 2005-02-18 2006-08-23 株式会社半导体能源研究所 半导体器件及其制造方法
CN101101391A (zh) * 2006-07-04 2008-01-09 株式会社半导体能源研究所 显示装置以及电子器械

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020080597A1 (en) * 2000-12-21 2002-06-27 Durel Corporation EL lamp for a front lit display
JP4922571B2 (ja) * 2005-04-14 2012-04-25 シチズン電子株式会社 発光ユニット
TWI499099B (zh) * 2009-12-30 2015-09-01 Epistar Corp 具有保護層之半導體發光元件
KR101292119B1 (ko) * 2012-03-21 2013-08-09 강성석 형광 램프의 제조 방법 및 이로 제조된 형광 램프
US9029880B2 (en) * 2012-12-10 2015-05-12 LuxVue Technology Corporation Active matrix display panel with ground tie lines
US9093627B2 (en) * 2012-12-21 2015-07-28 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
CN104183606A (zh) * 2014-08-07 2014-12-03 京东方科技集团股份有限公司 显示基板及其制造方法、显示装置
CN105405943A (zh) * 2015-05-21 2016-03-16 美科米尚技术有限公司 微型发光二极管
CN106206672A (zh) * 2016-09-09 2016-12-07 深圳市华星光电技术有限公司 Amoled器件及其制作方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1822384A (zh) * 2005-02-18 2006-08-23 株式会社半导体能源研究所 半导体器件及其制造方法
CN101101391A (zh) * 2006-07-04 2008-01-09 株式会社半导体能源研究所 显示装置以及电子器械

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