WO2021012333A1 - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

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Publication number
WO2021012333A1
WO2021012333A1 PCT/CN2019/101007 CN2019101007W WO2021012333A1 WO 2021012333 A1 WO2021012333 A1 WO 2021012333A1 CN 2019101007 W CN2019101007 W CN 2019101007W WO 2021012333 A1 WO2021012333 A1 WO 2021012333A1
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WO
WIPO (PCT)
Prior art keywords
layer
transparent electrode
display panel
area
electrode layer
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PCT/CN2019/101007
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English (en)
French (fr)
Inventor
杨薇薇
陈诚
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/754,632 priority Critical patent/US11329194B2/en
Publication of WO2021012333A1 publication Critical patent/WO2021012333A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1626—Constructional details or arrangements for portable computers with a single-body enclosure integrating a flat display, e.g. Personal Digital Assistants [PDAs]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637—Details related to the display arrangement, including those related to the mounting of the display in the housing
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1684—Constructional details or arrangements related to integrated I/O peripherals not covered by groups G06F1/1635 - G06F1/1675
    • G06F1/1686—Constructional details or arrangements related to integrated I/O peripherals not covered by groups G06F1/1635 - G06F1/1675 the I/O peripheral being an integrated camera
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1601—Constructional details related to the housing of computer displays, e.g. of CRT monitors, of flat displays
    • G06F1/1605—Multimedia displays, e.g. with integrated or attached speakers, cameras, microphones
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors

Definitions

  • the present invention relates to the field of display, in particular to a display panel and a display device.
  • OLED Organic Light-Emitting Diode
  • OLED Organic Light-Emitting Diode
  • It is a flexible OLED display device that has the characteristics of being bendable and easy to carry, and has become the main field of research and development in the field of display technology.
  • mobile phones generally dig holes in the screen camera position to make the camera area transparent, but this technology will affect the screen-to-body ratio and the picture experience is not good. Therefore, it is urgent to develop a camera under the screen without cutting the screen. When the camera is used, the screen directly above the camera is not displayed, and when the camera is not used, the screen is displayed normally. This technology can increase the screen-to-body ratio.
  • the object of the present invention is to provide a display panel and a display device, by thinning the first electrode of the thinned area, the optical transmittance of the thinned area can be increased, and finally the camera module can be improved Shooting performance.
  • the present invention provides a display device including a light-transmitting area, a thinning area, and a non-thinning area, the thinning area at least covers the light-transmitting area, the display panel includes: a substrate; On the substrate; a first electrode provided on the side of the thin film transistor layer away from the substrate; the thickness of the first electrode in the thinned area is smaller than that of the first electrode in the non-thinned area thickness.
  • the first electrode includes: a first transparent electrode layer; a first metal layer provided on the first transparent electrode layer; a second transparent electrode layer provided on the metal The layer is away from the side of the first transparent electrode layer.
  • the first electrode further includes: a third transparent electrode layer; a second metal layer disposed on the third transparent electrode layer; and a fourth transparent electrode layer , Arranged on the side of the second metal layer away from the third transparent electrode layer.
  • the thickness of the first metal layer is 40 nm to 140 nm; the thickness of the second metal layer is 5 nm to 80 nm.
  • the materials of the first metal layer and the second metal layer include metallic copper, metallic silver, silver alloy, metallic aluminum, and aluminum alloy; the first transparent electrode layer, the second transparent electrode layer, The materials of the third transparent electrode layer and the fourth transparent electrode layer include indium tin oxide.
  • the thinned area is the light-transmitting area; or the thinned area is a rectangular area along the long side direction of the display panel and the rectangular area covers the light-transmitting area.
  • the thin film transistor layer includes: a semiconductor layer provided on the substrate; a first gate insulating layer provided on the substrate and the semiconductor layer; a first gate provided on the first A side of the gate insulating layer away from the substrate; a second gate insulating layer is provided on the first gate insulating layer and the first gate; a second gate is provided on the second gate
  • the polar insulating layer is far from the first gate insulating layer; the interlayer insulating layer is provided on the second gate and the second gate insulating layer; the third metal layer is provided on the interlayer insulating A side of the layer away from the second gate insulating layer;
  • the first electrode is electrically connected to the third metal layer.
  • it further includes a pixel defining layer, which is disposed on the thin film transistor layer and the first electrode, the pixel defining layer has a groove, and the first electrode is exposed in the groove.
  • the present invention also provides a display device including the display panel described above, and the display device further includes a camera module, the camera module being disposed under the display panel and corresponding to the light-transmitting area.
  • the present invention provides a display panel and a display device.
  • a first electrode by depositing the first transparent electrode layer, the first metal layer and the second transparent electrode layer on the display panel area, The first transparent electrode layer, the first metal layer and the second transparent electrode layer in the thinned area are etched away. Afterwards, the third transparent electrode layer, the second metal layer, and the fourth transparent electrode layer are deposited again to form the first electrode of the display panel, so as to achieve the effect of thinning the first electrode in the thinned area, The optical transmittance of the thinned area can be increased, and finally the shooting performance of the camera module can be improved.
  • the display panel directly above the camera module does not display; when the camera module is not used, the display device can display normally, realizing a true full screen technology.
  • Figure 1 is a plan view of a prior art display panel
  • Figure 2 is a plan view of a display panel provided by the present invention.
  • Figure 3 is a structural diagram of a display panel provided by the present invention.
  • FIG. 4 is a schematic diagram of the structure of the first electrode in the non-thinning area provided by the present invention.
  • FIG. 5 is a schematic diagram of the structure of the first electrode in the thinned area provided by the present invention.
  • FIG. 6 is a schematic structural diagram of a display device provided by the present invention.
  • Thinning area 110 non-thinning area 120; light transmitting area 130;
  • Planarization layer 1028 base layer 1011; barrier layer 1012;
  • Buffer layer 1013 first transparent electrode layer 1031; first metal layer 1032;
  • the fourth transparent electrode layer 1036 The fourth transparent electrode layer 1036.
  • the present invention provides a display panel 100 including a thinned area 110, a non-thinned area 120 and a light-transmitting area 130. Both the thinned area 110 and the non-thinned area 120 can display images to realize a true full screen.
  • the thinned area 110 at least covers the light-transmitting area 130 corresponding to the under-screen camera.
  • the thinned area 110 generally corresponds to the position of the opening 11 of the conventional display panel 10 as shown in FIG. 1.
  • the thinned area 110 may also cover the position of the opening 11 of the conventional display panel 10 and extend to the periphery of the conventional opening 11.
  • the shape of the thinned area 110 is a square, the width of the thinned area 110 is greater than the diameter of the conventional opening 11, and the length of the thinned area 110 is the length of the display panel 100.
  • the thinned area 110 may be the light-transmitting area 130 corresponding to the under-screen camera, or the thinned area 110 may be a rectangular area along the long side of the display panel and the rectangular area Cover the light-transmitting area 130 corresponding to the under-screen camera.
  • the display panel 100 includes a substrate 101, a thin film transistor layer 102, a first electrode 103 and a pixel defining layer 104.
  • the substrate 101 includes a base layer 1011, a barrier layer 1012 and a buffer layer 1013.
  • the material of the base layer 1011 is polyimide.
  • the barrier layer 1012 is provided on the base layer 1011, and the buffer layer 1013 is provided on the side of the barrier layer away from the base layer 1011.
  • the thin film transistor layer 102 is disposed on the substrate 101.
  • the thin film transistor layer 102 includes: a semiconductor layer 1021, a first gate insulating layer 1022, a first gate 1023, a second gate insulating layer 1024, a second gate 1025, an interlayer insulating layer 1026, and a third metal layer 1027 and a planarization layer 1028.
  • the semiconductor layer 1021 is disposed on the side of the buffer layer 1013 away from the barrier layer 1012; the material of the semiconductor layer 1021 is polycrystalline silicon or monocrystalline silicon.
  • the first gate insulating layer 1022 is provided on the buffer layer 1013 and the semiconductor layer 1021; the first gate insulating layer 1022 mainly functions to insulate the adjacent metal layers to prevent the operation from being affected.
  • the first gate 1023 is provided on the side of the first gate insulating layer 1022 away from the buffer layer 1013; the second gate insulating layer 1024 is provided on the first gate 1023 and the second gate On a gate insulating layer 1022; the second gate 1025 is disposed on a side of the second gate insulating layer 1024 away from the first gate insulating layer 1022.
  • the interlayer insulating layer 1026 is disposed on the second gate insulating layer 1024 and the second gate 1025; the third metal layer 1027 is disposed on the interlayer insulating layer 1026 away from the second gate insulating layer One side of layer 1024.
  • the planarization layer 1028 is provided on the third metal layer 1027 and the interlayer insulating layer 1026.
  • the first electrode 103 is provided on the side of the thin film transistor layer away from the substrate 101.
  • the first electrode 103 is electrically connected to the third metal layer.
  • the thickness of the first electrode 103 in the thinned area 110 is smaller than the thickness of the first electrode 103 in the non-thinned area 120.
  • the first electrode 103 includes: a first transparent electrode layer 1031, a first metal layer 1032 and a second transparent electrode layer 1033.
  • the material of the first transparent electrode layer 1031 is indium tin oxide.
  • the first metal layer 1032 is disposed on the first transparent electrode layer 1031; the thickness of the first metal layer 1032 is 40 nm to 140 nm.
  • the material of the first metal layer 1032 includes metallic copper, metallic silver, silver alloy, metallic aluminum, and aluminum alloy. In the present invention, metallic silver material is preferred.
  • the second transparent electrode layer 1033 is disposed on a side of the metal layer away from the first transparent electrode layer 1031.
  • the material of the second transparent electrode layer 1033 is indium tin oxide.
  • the first electrode 103 further includes: a third transparent electrode layer 1034, a second metal layer 1035, and a fourth transparent electrode ⁇ 1036.
  • the third transparent electrode layer 1034 is provided on the side of the second transparent electrode layer 1033 away from the first metal layer 1032; in the thinned area 110, the first Three transparent electrode layers 1034 are provided on the thin film transistor layer 102.
  • the material of the third transparent electrode layer 1034 includes indium tin oxide.
  • the second metal layer 1035 is disposed on the third transparent electrode layer 1034; the thickness of the second metal layer 1035 is 5 nm to 80 nm.
  • the material of the second metal layer 1035 includes metallic copper or metallic silver with conductivity, and the present invention is preferably a metallic silver material.
  • the fourth transparent electrode layer 1036 is disposed on a side of the second metal layer 1035 away from the third transparent electrode layer 1034.
  • the material of the fourth transparent electrode layer 1036 is indium tin oxide.
  • the thickness of the first transparent electrode layer 1031, the second transparent electrode layer 1033, the third transparent electrode layer 1034, and the fourth transparent electrode layer 1036 are not specifically limited, and may be the same.
  • the first electrode 103 of the present invention is fabricated. Firstly, the first transparent electrode layer 1031, the first metal layer 1032, and the second transparent electrode layer 1033 are deposited on the display panel 100 area, and The three-layer structure is etched away in the thinned area 110, and then the third transparent electrode layer 1034, the second metal layer 1035, and the fourth transparent electrode are deposited again in the non-thinned area 120 and the thinned area 110 The layer 1036 forms the first electrode 103 of the display panel 100, thereby achieving the thinning of the first electrode 103 of the thinned area 110, which can increase the optical transmittance of the thinned area 110.
  • the pixel defining layer 104 is disposed on the thin film transistor layer and the first electrode 103.
  • the pixel defining layer 104 has a slot 105, and the first electrode 103 is exposed in the slot 105.
  • the uniformity of the display panel 100 can be adjusted through post-adjustment.
  • the present invention also provides a display device 20 including the display panel 100 and a camera module 21, the camera module 21 is disposed on the bottom surface of the display panel 100 and corresponds to the thinned area 110.
  • the camera module 21 is disposed at one end of the thinned area 110.
  • the present invention provides a display panel 100 and a display device 20.
  • the first transparent electrode layer 1031, the first metal layer 1032, and the The second transparent electrode layer 1033 is etched away from the three-layer structure in the thinned area 110, and then the third transparent electrode layer 1034, the third transparent electrode layer 1034, the third transparent electrode layer 1034, and the The second metal layer 1035 and the fourth transparent electrode layer 1036 form the first electrode 103 of the display panel 100, so as to realize the thinning of the first electrode 103 of the thinned area 110, which can increase the reduction.
  • the optical transmittance of the thin area 110 ultimately improves the shooting performance of the camera module.
  • the display panel 100 directly above the camera module 21 does not display; when the camera module is not used, the display device 10 can display normally, and a truly comprehensive display is achieved through this design. Screen technology.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)

Abstract

本发明提供一种显示面板及显示装置，在制作第一电极的时候，通过在所述显示面板区域沉积所述第一透明电极层、所述第一金属层以及所述第二透明电极层，将所述减薄区将第一透明电极层及第一金属层及第二透明电极层蚀刻掉。之后再次沉积所述第三透明电极层、所述第二金属层以及所述第四透明电极层形成所述显示面板的第一电极。

Description

显示面板及显示装置 技术领域
本发明涉及显示领域，尤其是涉及一种显示面板及显示装置。
 背景技术
有机发光二极管（Organic Light-Emitting Diode，OLED）由于其重量轻、自发光、广视角、驱动电压低、发光效率高功耗低以及响应速度快等优点，应用范围越来越广泛。是柔性OLED显示装置具有可弯折易携带的特点，成为显示技术领域研究和开发的主要领域。目前手机一般会将屏幕摄像头位置挖孔，使得摄像头区域透光，但这种技术会影响屏占比，并且画面体验不佳，所以急需开发一种摄像头置于屏幕下方，不对屏幕进行切割，在使用摄像头时，摄像头正上方屏幕不显示，不使用摄像头时，屏幕正常显示的技术，该技术可增大屏占比。
 技术问题
因此，有必要提出一种新的显示面板，提高显示面板的屏占比及光学透过率，提升画面体验，实现真正的全面屏技术。
 技术解决方案
本发明的目的在于，提供一种显示面板及显示装置，通过对所述减薄区的第一电极进行减薄，可以增大所述减薄区的光学透过率，最终提高所述摄像模块的拍摄性能。
本发明提供一种显示装置，包括透光区、减薄区以及非减薄区，所述减薄区至少覆盖所述透光区，所述显示面板包括：基板；薄膜晶体管层，设于所述基板上；第一电极，设于所述薄膜晶体管层远离所述基板的一侧；所述第一电极在所述减薄区的厚度小于所述第一电极在所述非减薄区的厚度。
进一步地，在所述减薄区，所述第一电极包括：第一透明电极层；第一金属层，设于所述第一透明电极层上；第二透明电极层，设于所述金属层远离所述第一透明电极层的一侧。
进一步地，在所述减薄区以及非减薄区，所述第一电极还包括：第三透明电极层；第二金属层，设于所述第三透明电极层上；第四透明电极层，设于所述第二金属层远离所述第三透明电极层的一侧。
进一步地，所述第一金属层的厚度为40nm~140nm；所述第二金属层的厚度为5nm~80nm。
进一步地，所述第一金属层以及所述第二金属层的材料包括金属铜、金属银、银合金、金属铝及铝合金；所述第一透明电极层、所述第二透明电极层、所述第三透明电极层以及所述第四透明电极层的材料包括氧化铟锡。
进一步地，所述减薄区为所述透光区；或所述减薄区为沿所述显示面板长边方向的长方形区域且所述长方形区域覆盖所述透光区。
进一步地，所述薄膜晶体管层包括：半导体层，设于所述基板上；第一栅极绝缘层，设于所述基板以及所述半导体层上；第一栅极，设于所述第一栅极绝缘层远离所述基板的一侧；第二栅极绝缘层，设于所述第一栅极绝缘层以及所述第一栅极上；第二栅极，设于所述第二栅极绝缘层远离所述第一栅极绝缘层上；层间绝缘层，设于所述第二栅极以及所述第二栅极绝缘层上；第三金属层，设于所述层间绝缘层远离所述第二栅极绝缘层的一侧；
进一步地，所述第一电极电性连接所述第三金属层。
进一步地，还包括像素限定层，设于所述薄膜晶体管层以及所述第一电极上，所述像素限定层具有一开槽，所述第一电极暴露于所述开槽中。
本发明还提供一种显示装置，包括前文所述的显示面板，所述显示装置还包括一摄像模块，所述摄像模块设于所述显示面板下且对应所述透光区。
 有益效果
本发明提供一种显示面板及显示装置，在制作第一电极的时候，通过在所述显示面板区域沉积所述第一透明电极层、所述第一金属层以及所述第二透明电极层，将所述减薄区的第一透明电极层及第一金属层及第二透明电极层蚀刻掉。之后再次沉积所述第三透明电极层、所述第二金属层以及所述第四透明电极层形成所述显示面板的第一电极，实现所述减薄区的第一电极薄化的效果，可以增大所述减薄区的光学透过率，最终提高所述摄像模块的拍摄性能。当在使用所述摄像模块时，所述摄像模块正上方的显示面板并不显示；当不使用所述摄像模块时，所述显示装置可以正常显示的技术，实现真正的全面屏技术。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术显示面板的平面图；
图2为本发明提供的显示面板的平面图；
图3为本发明提供的显示面板的结构图；
图4为本发明提供的非减薄区第一电极的结构示意图；
图5为本发明提供的减薄区第一电极的结构示意图；
图6为本发明提供的显示装置的结构示意图；
显示面板100；显示装置20；
减薄区110；非减薄区120；透光区130；
基板101；薄膜晶体管层102；第一电极103；
像素限定层104；开槽105；半导体层1021；
第一栅极绝缘层1022；第一栅极1023；第二栅极绝缘层1024；
第二栅极1025；层间绝缘层1026；源漏极层1027；
平坦化层1028；基层1011；阻隔层1012；
缓冲层1013；第一透明电极层1031；第一金属层1032；
第二透明电极层1033；第三透明电极层1034；第二金属层1035；
第四透明电极层1036。
本发明实施方式
以下是各实施例的说明是参考附加的图式，用以例示本发明可以实施的特定实施例。本发明所提到的方向用语，例如上、下、前、后、左、右、内、外、侧等，仅是参考附图式的方向。本发明提到的元件名称，例如第一、第二等，仅是区分不同的元部件，可以更好的表达。在图中，结构相似的单元以相同标号表示。
本文将参照附图来详细描述本发明的实施例。本发明可以表现为许多不同形式，本发明不应仅被解释为本文阐述的具体实施例。本发明提供实施例是为了解释本发明的实际应用，从而使本领域其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改方案。
如图2所示，本发明提供一种显示面板100，包括减薄区110、非减薄区120以及透光区130。所述减薄区110以及非减薄区120都可以进行画面显示，实现真正的全面屏。所述减薄区110至少覆盖屏下摄像头对应的透光区130。
所述减薄区110一般对应如图1所示的传统显示面板10的开孔11位置。所述减薄区110也可以覆盖传统显示面板10的开孔11位置并且向传统开孔11外围扩展。在本发明中，所述减薄区110的形状为方形，所述减薄区110的宽度大于传统开孔11的直径，而所述减薄区110的长度为所述显示面板100的长度。
总的来说，所述减薄区110可以为所述屏下摄像头对应的透光区130，或者，所述减薄区110为沿所述显示面板长边方向的长方形区域且所述长方形区域覆盖所述屏下摄像头对应的透光区130。
如图3所示，所述显示面板100包括：基板101、薄膜晶体管层102、第一电极103以及像素限定层104。
所述基板101包括基层1011、阻隔层1012以及缓冲层1013。所述基层1011的材料为聚酰亚胺。
所述阻隔层1012设于所述基层1011上，所述缓冲层1013设于所述则隔层远离所述基层1011的一侧。
所述薄膜晶体管层102设于所述基板101上。
所述薄膜晶体管层102包括：半导体层1021、第一栅极绝缘层1022、第一栅极1023、第二栅极绝缘层1024、第二栅极1025、层间绝缘层1026、第三金属层1027以及平坦化层1028。
所述半导体层1021设于所述缓冲层1013远离所述阻隔层1012的一侧；所述半导体层1021的材料为多晶硅或单晶硅。
所述第一栅极绝缘层1022设于所述缓冲层1013以及所述半导体层1021上；所述第一栅极绝缘层1022主要起到将相邻的金属层之间绝缘，防止影响工作。
所述第一栅极1023设于所述第一栅极绝缘层1022远离所述缓冲层1013的一侧；所述第二栅极绝缘层1024设于所述第一栅极1023以及所述第一栅极绝缘层1022上；所述第二栅极1025设于所述第二栅极绝缘层1024远离所述第一栅极绝缘层1022的一侧。
所述层间绝缘层1026设于所述第二栅极绝缘层1024以及第二栅极1025上；所述第三金属层1027设于所述层间绝缘层1026远离所述第二栅极绝缘层1024的一侧。
所述平坦化层1028设于所述第三金属层1027以及所述层间绝缘层1026上。
所述第一电极103设于所述薄膜晶体管层远离所述基板101的一侧。所述第一电极103电性连接所述第三金属层。
所述第一电极103在所述减薄区110的厚度小于所述第一电极103在所述非减薄区120的厚度。
如图4所示，在所述非减薄区120，所述第一电极103包括：第一透明电极层1031、第一金属层1032以及第二透明电极层1033。
所述第一透明电极层1031的材料为氧化铟锡。
所述第一金属层1032设于所述第一透明电极层1031上；所述第一金属层1032的厚度为40nm~140nm。
所述第一金属层1032的材料包括金属铜、金属银、银合金、金属铝及铝合金，本发明优选为金属银材料。
所述第二透明电极层1033设于所述金属层远离所述第一透明电极层1031的一侧。所述第二透明电极层1033的材料为氧化铟锡。
同时参照图4及图5所示，在所述减薄区110以及非减薄区120，所述第一电极103还包括：第三透明电极层1034、第二金属层1035以及第四透明电极层1036。
在所述非减薄区120，所述第三透明电极层1034设于所述第二透明电极层1033远离所述第一金属层1032的一侧；在所述减薄区110，所述第三透明电极层1034设于所述薄膜晶体管层102上。
所述第三透明电极层1034的材料包括氧化铟锡。
所述第二金属层1035设于所述第三透明电极层1034上；所述第二金属层1035的厚度为5nm~80nm。
所述第二金属层1035的材料包括具有导电性的金属铜或金属银，本发明优选为金属银材料。
所述第四透明电极层1036设于所述第二金属层1035远离所述第三透明电极层1034的一侧。所述第四透明电极层1036的材料为氧化铟锡。
所述第一透明电极层1031、所述第二透明电极层1033、所述第三透明电极层1034以及所述第四透明电极层1036厚度并不做具体限定，可以相同。
本发明具体地第一电极103制作步骤，首先在所述显示面板100区域沉积所述第一透明电极层1031、所述第一金属层1032以及所述第二透明电极层1033，并在所述减薄区110刻蚀掉三层结构，接着在所述非减薄区120以及减薄区110再次沉积所述第三透明电极层1034、所述第二金属层1035以及所述第四透明电极层1036形成所述显示面板100的第一电极103，进而实现对所述减薄区110的第一电极103进行减薄，可以增大所述减薄区110的光学透过率。
所述像素限定层104设于所述薄膜晶体管层以及第一电极103上，所述像素限定层104具有一开槽105，所述第一电极103暴露于所述开槽105中。
对于所述减薄区110的所述第一电极103减薄可通过后期调试来调整所述显示面板100的均一性。
如图6所示，本发明还提供一种显示装置20，包括所述的显示面板100以及摄像模块21，所述摄像模块21设于所述显示面板100底面且对应所述减薄区110。所述摄像模块21设置于所述减薄区110的其中一端。
本发明提供一种显示面板100及显示装置20，在制作第一电极103的时候，通过在所述显示面板100区域沉积所述第一透明电极层1031、所述第一金属层1032以及所述第二透明电极层1033，并在所述减薄区110刻蚀掉上述三层结构，接着在所述非减薄区120以及减薄区110再次沉积所述第三透明电极层1034、所述第二金属层1035以及所述第四透明电极层1036形成所述显示面板100的第一电极103，进而实现对所述减薄区110的第一电极103进行减薄，可以增大所述减薄区110的光学透过率，最终提高所述摄像模块的拍摄性能。
当在使用所述摄像模块21时，所述摄像模块21正上方的显示面板100并不显示；当不使用所述摄像模块时，所述显示装置10可以正常显示，通过此设计实现真正的全面屏技术。
本发明的技术范围不仅仅局限于所述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对所述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。

Claims (10)

  1.   一种显示面板，其中，包括透光区、减薄区以及非减薄区，所述减薄区至少覆盖所述透光区，
    所述显示面板包括：
    基板；
    薄膜晶体管层，设于所述基板上；
    第一电极，设于所述薄膜晶体管层远离所述基板的一侧；
    所述第一电极在所述减薄区的厚度小于所述第一电极在所述非减薄区的厚度。
  2.   根据权利要求1所述的显示面板，其中，在所述非减薄区，所述第一电极包括：
    第一透明电极层；
    第一金属层，设于所述第一透明电极层上；
    第二透明电极层，设于所述金属层远离所述第一透明电极层的一侧。
  3.   根据权利要求2所述的显示面板，其中，在所述减薄区以及非减薄区，所述第一电极还包括：
    第三透明电极层，设于所述非减薄区的第二透明电极层和所述减薄区的薄膜晶体管层上；
    第二金属层，设于所述第三透明电极层上；
    第四透明电极层，设于所述第二金属层远离所述第三透明电极层的一侧。
  4.   根据权利要求3所述的显示面板，其中，
    所述第一金属层的厚度为40nm~140nm；
    所述第二金属层的厚度为5nm~80nm。
  5.   根据权利要求3所述的显示面板，其中，
    所述第一金属层以及所述第二金属层的材料包括金属铜、金属银、银合金、金属铝及铝合金；所述第一透明电极层、所述第二透明电极层、所述第三透明电极层以及所述第四透明电极层的材料包括氧化铟锡。
  6. 根据权利要求1所述的显示面板，其中，
    所述减薄区为所述透光区；或
    所述减薄区为沿所述显示面板长边方向的长方形区域且所述长方形区域覆盖所述透光区。
  7. 根据权利要求1所述的显示面板，其中，
    所述薄膜晶体管层包括：
    半导体层，设于所述基板上；
    第一栅极绝缘层，设于所述基板以及所述半导体层上；
    第一栅极，设于所述第一栅极绝缘层远离所述基板的一侧；
    第二栅极绝缘层，设于所述第一栅极绝缘层以及所述第一栅极上；
    第二栅极，设于所述第二栅极绝缘层远离所述第一栅极绝缘层上；
    层间绝缘层，设于所述第二栅极以及所述第二栅极绝缘层上；
    第三金属层，设于所述层间绝缘层远离所述第二栅极绝缘层的一侧。
  8. 根据权利要求7所述的显示面板，其中，
    所述第一电极电性连接所述第三金属层。
  9. 根据权利要求1所述的显示面板，其中，还包括像素限定层，设于所述薄膜晶体管层以及所述第一电极上，所述像素限定层具有一开槽，所述第一电极暴露于所述开槽中。
  10. 一种显示装置，其中，包括如权利要求1所述的显示面板，所述显示装置还包括一摄像模块，所述摄像模块设于所述显示面板下且对应所述透光区。
PCT/CN2019/101007 2019-07-23 2019-08-16 显示面板及显示装置 WO2021012333A1 (zh)

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