WO2021002141A1 - 吸着装置及び真空処理装置 - Google Patents

吸着装置及び真空処理装置 Download PDF

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Publication number
WO2021002141A1
WO2021002141A1 PCT/JP2020/022121 JP2020022121W WO2021002141A1 WO 2021002141 A1 WO2021002141 A1 WO 2021002141A1 JP 2020022121 W JP2020022121 W JP 2020022121W WO 2021002141 A1 WO2021002141 A1 WO 2021002141A1
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Prior art keywords
substrate
guide hole
guide
elevating member
suction device
Prior art date
Application number
PCT/JP2020/022121
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English (en)
French (fr)
Inventor
弘敏 阪上
哲宏 大野
Original Assignee
株式会社アルバック
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Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to JP2020560499A priority Critical patent/JP6972386B2/ja
Priority to CN202080040321.8A priority patent/CN113939903A/zh
Priority to KR1020217035777A priority patent/KR102638389B1/ko
Publication of WO2021002141A1 publication Critical patent/WO2021002141A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Definitions

  • the present invention relates to an adsorption device that adsorbs and holds a substrate in a vacuum, and more particularly to a technique of an adsorption device that cools a substrate using a cooling gas.
  • adsorption devices have been widely used in sputtering devices and the like in order to precisely control the temperature of the substrate.
  • an adsorption device that adsorbs and holds the insulating substrate by a gradient force is widely used.
  • the cooling gas is introduced into the cooling space 151 of the main body 150 through a hole (not shown) to form the substrate 110.
  • the bottom surface is cooled.
  • an elevating member 115 for elevating and lowering the substrate 110 is provided in the through guide hole 152 communicating with the cooling space 151.
  • the lower surface of the substrate support portion 115b having a larger outer diameter than the drive portion 115a of the elevating member 115 is formed on the lower surface of the accommodating portion 154 of the through guide hole 152.
  • the substrate 110 is cooled while being pressed against the 155.
  • the present invention has been made to solve the above-mentioned problems of the prior art, and an object of the present invention is to prevent leakage of the cooling gas in an adsorption device for cooling the substrate using the cooling gas.
  • the purpose is to provide a technique for improving the cooling efficiency of the substrate.
  • the present invention made to solve the above problems has an adsorption electrode for adsorbing and holding a substrate in a dielectric, and a cooling space for cooling the substrate with a gas is provided in a portion on the adsorption side. It has a main body portion and an elevating member that supports and elevates the substrate through a through guide hole that communicates with the cooling space of the main body portion and penetrates the main body portion, and the elevating member is the substrate.
  • the substrate support portion has a substrate support portion that supports the substrate and a connecting portion that is connected to the substrate support portion and is driven by a drive mechanism, and the substrate support portion is used for cooling the through guide hole in a state where the substrate is not supported.
  • the connecting portion is arranged in the accommodating portion communicating with the space, and the connecting portion is arranged in the guide portion communicating with the accommodating portion of the through guide hole, and the connecting portion and the substrate support portion of the elevating member are arranged.
  • a sealing member is provided between the two and the support wall portion provided in the accommodating portion of the through guide hole to seal the guide portion of the through guide hole with respect to the accommodating portion.
  • the present invention is a suction device in which the elevating member is configured such that the seal member is brought into close contact with the support wall portion of the accommodating portion of the through guide hole by its own weight.
  • the present invention is an adsorption device in which the sealing member is an O-ring.
  • the present invention includes a vacuum chamber and any of the above-mentioned suction devices provided in the vacuum tank, and is configured to perform a predetermined process on a substrate sucked and held by the suction device. It is a processing device.
  • a seal member is provided between the connecting portion of the elevating member and the substrate support portion, and the seal member is brought into close contact with the support wall portion provided in the through guide hole to support the through guide hole. Since the guide portion is sealed with respect to the accommodating portion, the cooling gas introduced into the cooling space is placed on the guide portion side of the through guide hole in the adsorption device that cools the substrate using the cooling gas. Leakage can be prevented, which can improve the cooling efficiency of the substrate.
  • the inner diameter of the through guide hole can be made as small as possible by providing the sealing member on the elevating member side, whereby the through guide for the cooling gas can be guided without sacrificing the effective area of the suction portion. Leakage of the hole to the guide portion side can be reliably prevented.
  • the adsorption device of the present invention it is possible to provide a vacuum processing device having high substrate cooling efficiency.
  • the elevating member when the elevating member is configured such that the seal member is in close contact with the support wall portion of the accommodating portion of the main body due to its own weight, the seal member is pressed against the support wall portion of the accommodating portion (spring). Etc.) are not required, so that it is possible to provide a suction device and a vacuum processing device having a simple structure.
  • FIG. 1 Schematic configuration diagram of a sputtering apparatus according to an embodiment of the vacuum processing apparatus according to the present invention
  • FIG. 1 Schematic configuration diagram showing an example of a conventional adsorption device
  • FIG. 1A is a schematic configuration diagram of a sputtering apparatus according to an embodiment of the vacuum processing apparatus according to the present invention.
  • FIG. 1B is a schematic configuration diagram showing an embodiment of the suction device used in the sputtering device
  • FIG. 1C is a diagram for explaining a through guide hole
  • FIG. 1C is a suction device used in the sputtering device.
  • It is a schematic block diagram which shows the Embodiment, and is the figure for demonstrating the state which the elevating member is arranged in the through guide hole.
  • FIG. 2A is a cross-sectional view showing a main part of the elevating member according to the present embodiment
  • FIG. 2B is a cross-sectional view showing a main part of the elevating member arranged in the through guide hole.
  • c) is a cross-sectional view of a main part of the suction device of the present embodiment
  • FIG. 2 (d) is a view showing a state in which the elevating member is arranged in the through guide hole of the main body. It is a figure which shows the state which supported the substrate by the elevating member in the sectional view of the main part of.
  • the sputtering apparatus 1 of the present embodiment has a vacuum tank 2 connected to a vacuum exhaust system (not shown).
  • the inside of the vacuum chamber 2 is configured to introduce sputter gas, and the target 3 is arranged inside, for example, at the upper part.
  • This target 3 is connected to a sputter power supply (not shown) so that a negative bias voltage is applied.
  • the positive side of the sputtering power supply is grounded together with the vacuum chamber 2.
  • a suction device 5 for sucking and holding the substrate (adsorption target) 10 is provided on the stage 4 in the vacuum chamber 2.
  • a plurality of adsorption electrodes 11 are provided in a main body 50 made of a dielectric material such as various ceramics, and the adsorption electrodes 11 are configured to supply electric power from an adsorption power source (not shown). Has been done.
  • a cooling space 51 for cooling the substrate 10 is provided on the suction side portion of the main body 50 of the suction device 5.
  • a gas introduction hole (not shown) that communicates with the cooling space 51 and introduces the cooling gas into the space is provided.
  • a rare gas such as argon (Ar) gas, nitrogen (N 2 ) gas, or helium (He) can be used as the cooling gas.
  • the cooling space 51 is provided by forming a recess in the suction side portion of the main body 50, and is arranged so as to face the lower surface of the substrate 10 sucked on the suction device 5.
  • the main body 50 of the suction device 5 is provided with a plurality of through guide holes 52 that communicate with the cooling space 51 and penetrate the main body 50 to reach the stage 4.
  • the substrate 10 is placed on the suction device 5 or the substrate 10 is separated from the suction device 5 by supporting and raising and lowering the substrate 10 through the through guide holes 52. Elevating members 15 are provided respectively.
  • the through guide hole 52 has a guide portion 53 formed so as to extend in the vertical direction, and an accommodating portion 54 communicating with the cooling space 51 is provided at the upper end portion of the through guide hole 52.
  • the guide portion 53 of the through guide hole 52 and the accommodating portion 54 face each other with the seal positioning portion 15d of the elevating member 15 described later, and the inner diameter is reduced from the accommodating portion 54 toward the guide portion 53.
  • the formed tapered support wall portion 55 is provided (see FIG. 2B).
  • the elevating member 15 of the present embodiment is made of a metal material such as stainless steel, and is composed of a columnar shaft formed so as to extend in the vertical direction and connected to a drive mechanism 16 (see FIG. 1A). It has a connecting portion 15a and a columnar substrate supporting portion 15b provided at the upper end portion of the connecting portion 15a to support the substrate 10.
  • the substrate support portion 15b is arranged in the accommodating portion 54 of the through guide hole 52, and the connecting portion 15a is arranged in the guide portion 53 of the through guide hole 52 in a state where the substrate 10 is not supported. It is configured as follows.
  • the elevating member 15 of the present embodiment is integrally formed, and each dimension is set so that the outer diameter of the connecting portion 15a is smaller than the outer diameter of the substrate supporting portion 15b, for example, as shown in FIG. 2A. It is set.
  • a seal positioning portion 15d formed in a tapered shape so that the outer diameter becomes smaller toward the connecting portion 15a is provided on the portion of the substrate support portion 15b on the connecting portion 15a side, and the seal positioning portion 15d is provided.
  • a columnar groove portion 15e having a diameter smaller than that of the connecting portion 15a is provided on the portion on the connecting portion 15a side.
  • an O-ring 17 (seal member) is provided between the connecting portion 15a of the elevating member 15 and the substrate support portion 15b to seal the accommodating portion 54 of the through guide hole 52 with respect to the guide portion 53.
  • the O-ring 17 of the present embodiment is formed so as to have an inner diameter slightly smaller than the outer diameter of the groove portion 15e of the elevating member 15 and an outer diameter smaller than the outer diameter of the substrate support portion 15b.
  • the seal positioning portion is brought into close contact with the seal positioning portion 15d and the groove portion 15e described above, and also in contact with the upper surface 15f of the connecting portion 15a.
  • the shape and dimensions of the upper surface 15f of the 15d, the groove portion 15e and the connecting portion 15a are set, and the dimensions of the O-ring 17 are set.
  • the O-ring 17 of the O-ring 17 is in close contact with the support wall portion 55 of the through guide hole 52 when the elevating member 15 is arranged in the through guide hole 52.
  • the dimensions and the shape and dimensions of the support wall portion 55 of the through guide hole 52 are set.
  • a flat plate-shaped protective member 15c made of an elastic member such as resin or rubber is mounted on the upper surface of the substrate support portion 15b.
  • the protective member 15c does not damage the back surface of the substrate 10 when the substrate 10 is supported by the elevating member 15, and causes problems such as ESD (peeling charge). It is intended to play a role of not letting you.
  • an O-ring 17 is provided as a sealing member between the connecting portion 15a of the elevating member 15 and the substrate support portion 15b, and the O-ring 17 is provided in the through guide hole 52. Since the accommodating portion 54 of the through guide hole 52 is sealed with respect to the guide portion 53 by supporting the substrate 10 in close contact with the supporting wall portion 55, when the substrate 10 is cooled using the cooling gas. It is possible to prevent the cooling gas introduced into the cooling space 51 from leaking to the guide portion 53 side of the through guide hole 52, thereby improving the cooling efficiency of the substrate 10.
  • the inner diameter of the through guide hole 52 can be made as small as possible, thereby cooling without sacrificing the effective area of the suction portion. It is possible to reliably prevent the gas for leaking to the guide portion 53 side of the through guide hole 52.
  • the suction device 5 of the present embodiment it is possible to provide the vacuum processing device 1 having a compact structure with high substrate cooling efficiency.
  • the elevating member 15 is configured such that the O-ring 17 is in close contact with the support wall portion 55 of the accommodating portion 54 of the through guide hole 52 due to its own weight, the O-ring 17 is provided.
  • the configuration of pressing against the support wall portion 55 of the accommodating portion 54 becomes unnecessary, and as a result, a suction device and a vacuum processing device having a simple configuration can be provided.
  • the elevating member 15 is provided with the tapered seal positioning portion 15d, and the through guide hole 52 is provided with the tapered support wall portion 55, but the present invention is not limited to this.
  • the seal positioning portion 15d of the elevating member 15 and the support wall portion 55 of the through guide hole 52 may be provided so as to be orthogonal to the longitudinal direction of the elevating member 15 and the through guide hole 52.
  • the present invention can be applied not only to a sputtering apparatus but also to various vacuum processing apparatus such as a vapor deposition apparatus and an etching apparatus.

Abstract

冷却用ガスを用いて基板の冷却を行う吸着装置において、冷却用ガスの漏れを防止することによって基板の冷却効率を向上させる技術を提供する。本発明では、昇降部材１５が、基板１０を支持しない状態において、連結部１５ａが貫通ガイド孔５２のガイド部５３内に配置されるとともに、基板支持部１５ｂが貫通ガイド孔５２の収容部５４内に配置されるように構成されている。昇降部材１５の連結部１５ａと基板支持部１５ｂとの間に、昇降部材１５の連結部１５ａを貫通ガイド孔５２の収容部５４に設けた支持壁部５５と密着して支持することで貫通ガイド孔５２の収容部５４をガイド部５３に対して密閉するＯリング１７が設けられている。

Description

吸着装置及び真空処理装置
　本発明は、真空中で基板を吸着保持する吸着装置に関し、特に、冷却用ガスを用いて基板の冷却を行う吸着装置の技術に関する。
　従来より、スパッタリング装置などでは基板の温度制御を精密に行うために吸着装置が広く用いられている。真空中でガラス等の絶縁性基板上に成膜等の処理を行う装置においては、グラディエント力によって絶縁性基板を吸着保持する吸着装置が広く用いられている。
　近年、この種の技術分野では、吸着する基板の大きさが大きくなってきたことに対応するため、吸着装置と基板との間に冷却用空間を設け、この冷却用空間にガスを導入して基板を冷却してその温度制御を行うことが提案されている。
　例えば図３に示すように、ステージ１０４上に設けられた従来の吸着装置１０５では、図示しない孔部を介して冷却用ガスを本体部１５０の冷却用空間１５１内に導入することによって基板１１０の下面を冷却するようにしている。
　そして、冷却用空間１５１と連通する貫通ガイド孔１５２内に、基板１１０を昇降させる昇降部材１１５が設けられている。
　この従来技術では、冷却用ガスを冷却用空間１５１内に導入した後、昇降部材１１５の駆動部１１５ａより外径を大きく形成した基板支持部１１５ｂの下面を貫通ガイド孔１５２の収容部１５４の底面１５５に押し付けた状態で、基板１１０の冷却を行う。
　しかし、従来技術においては、昇降部材１１５の基板支持部１１５ｂの下面と収容部１５４の底面１５５との間にわずかな隙間ができ、この隙間から冷却用ガスがガイド部１５３側に漏れることにより、冷却効率を向上させることが困難であるという課題がある。
特許第４４７３１４５号公報
　本発明は、上記従来技術の課題を解決するためになされたもので、その目的とするところは、冷却用ガスを用いて基板の冷却を行う吸着装置において、冷却用ガスの漏れを防止することによって基板の冷却効率を向上させる技術を提供することにある。
　上記課題を解決するためになされた本発明は、誘電体中に基板を吸着保持するための吸着電極を有し、吸着側の部分に前記基板をガスを用いて冷却する冷却用空間が設けられた本体部と、前記本体部の冷却用空間に連通し且つ当該本体部を貫通する貫通ガイド孔を介して前記基板を支持して昇降させる昇降部材とを有し、前記昇降部材は、前記基板を支持する基板支持部と、当該基板支持部に連結され駆動機構によって駆動される連結部とを有するとともに、前記基板を支持しない状態において、前記基板支持部が、前記貫通ガイド孔の前記冷却用空間に連通する収容部内に配置されるとともに、前記連結部が、前記貫通ガイド孔の収容部に連通するガイド部内に配置されるように構成され、前記昇降部材の前記連結部と前記基板支持部との間に、前記貫通ガイド孔の収容部に設けた支持壁部と密着して支持することで前記貫通ガイド孔のガイド部を前記収容部に対して密閉するシール部材が設けられている吸着装置である。
　本発明は、前記昇降部材は、その自重によって前記シール部材が前記貫通ガイド孔の収容部の支持壁部と密着するように構成されている吸着装置である。
　本発明は、前記シール部材がＯリングである吸着装置である。
　本発明は、真空槽と、前記真空槽内に設けられた上記いずれかの吸着装置とを備え、前記吸着装置によって吸着保持された基板に対して所定の処理を行うように構成されている真空処理装置である。
　本発明の吸着装置では、昇降部材の連結部と基板支持部との間にシール部材を設け、このシール部材を貫通ガイド孔に設けた支持壁部と密着させて支持することで貫通ガイド孔のガイド部を収容部に対して密閉するようにしたことから、冷却用ガスを用いて基板の冷却を行う吸着装置において、冷却用空間に導入された冷却用ガスが貫通ガイド孔のガイド部側に漏れることを防止することができ、これにより基板の冷却効率を向上させることができる。
　また、本発明においては、昇降部材側にシール部材を設けることによって、貫通ガイド孔の内径をできるだけ小さくすることができ、これにより吸着部分の有効面積を犠牲にすることなく冷却用ガスの貫通ガイド孔のガイド部側への漏れを確実に防止することができる。
　このように、本発明の吸着装置によれば、基板の冷却効率が高い真空処理装置を提供することができる。
　本発明において、昇降部材が、その自重によってシール部材が本体部の収容部の支持壁部と密着するように構成されている場合には、シール部材を収容部の支持壁部に押し付ける構成（ばね等）が不要になるので、簡素な構成の吸着装置並びに真空処理装置を提供することができる。
（ａ）：本発明に係る真空処理装置の一実施の形態であるスパッタリング装置の概略構成図、（ｂ）：同スパッタリング装置に用いる吸着装置の実施の形態を示す概略構成図で、貫通ガイド孔を説明するための図、（ｃ）：同スパッタリング装置に用いる吸着装置の実施の形態を示す概略構成図で、貫通ガイド孔内に昇降部材が配置された状態を説明するための図 （ａ）：本実施の形態の昇降部材の要部を示す断面図、（ｂ）：貫通ガイド孔内に配置された昇降部材の要部を示す断面図、（ｃ）：本実施の形態の吸着装置の要部断面図で、昇降部材を本体部の貫通ガイド孔内に配置した状態を示す図、（ｄ）：本実施の形態の吸着装置の要部断面図で、昇降部材によって基板を支持した状態を示す図 従来の吸着装置の例を示す概略構成図
　以下、本発明の実施の形態を図面を参照して説明する。
　図１（ａ）は、本発明に係る真空処理装置の一実施の形態であるスパッタリング装置の概略構成図である。図１（ｂ）は、同スパッタリング装置に用いる吸着装置の実施の形態を示す概略構成図で、貫通ガイド孔を説明するための図、図１（ｃ）は、同スパッタリング装置に用いる吸着装置の実施の形態を示す概略構成図で、貫通ガイド孔内に昇降部材が配置された状態を説明するための図である。
　図２（ａ）は、本実施の形態の昇降部材の要部を示す断面図、図２（ｂ）は、貫通ガイド孔内に配置された昇降部材の要部を示す断面図、図２（ｃ）は、本実施の形態の吸着装置の要部断面図で、昇降部材を本体部の貫通ガイド孔内に配置した状態を示す図、図２（ｄ）は、本実施の形態の吸着装置の要部断面図で、昇降部材によって基板を支持した状態を示す図である。
　図１（ａ）に示すように、本実施の形態のスパッタリング装置１は、図示しない真空排気系に接続された真空槽２を有している。
　この真空槽２内は、スパッタガスを導入するように構成され、その内部の例えば上部に、ターゲット３が配置されている。
　このターゲット３は、図示しないスパッタ電源に接続され、負のバイアス電圧が印加されるようになっている。なお、スパッタ電源のプラス側は真空槽２と共に接地されている。
　真空槽２内のステージ４上には、基板（吸着対象物）１０を吸着保持するための吸着装置５が設けられている。
　この吸着装置５は、種々のセラミックス等の誘電体からなる本体部５０中に複数の吸着電極１１が設けられており、これら吸着電極１１に、図示しない吸着電源からそれぞれ電力を供給するように構成されている。
　図１（ｂ）に示すように、吸着装置５の本体部５０の吸着側の部分には、基板１０を冷却する冷却用空間５１が設けられている。
　そして、吸着装置５の本体部５０内には、冷却用空間５１と連通して当該空間に冷却用ガスを導入するガス導入孔（図示せず）が設けられている。
　本発明では、冷却用ガスとして、例えばアルゴン（Ａｒ）ガス、窒素（Ｎ2）ガス、ヘリウム（Ｈｅ）等の希ガスを用いることができる。
　冷却用空間５１は、本体部５０の吸着側の部分に凹部を形成することによって設けられ、吸着装置５上に吸着された基板１０の下面と対向するように配置されている。
　吸着装置５の本体部５０には、冷却用空間５１に連通し且つ本体部５０を貫通してステージ４に到る複数の貫通ガイド孔５２が設けられている。
　これら貫通ガイド孔５２の内部には、貫通ガイド孔５２を介して基板１０を支持して昇降させることにより基板１０を吸着装置５上に載置し又は基板１０を吸着装置５から離脱させるための昇降部材１５がそれぞれ設けられている。
　貫通ガイド孔５２は、鉛直方向に延びるように形成されたガイド部５３を有し、貫通ガイド孔５２の上端部には、冷却用空間５１と連通する収容部５４が設けられている。
　そして、貫通ガイド孔５２のガイド部５３と収容部５４との間には、後述する昇降部材１５のシール位置決め部１５ｄと対向し、収容部５４からガイド部５３に向って内径が小さくなるように形成されたテーパ状の支持壁部５５が設けられている（図２（ｂ）参照）。
　本実施の形態の昇降部材１５は、例えばステンレス等の金属材料からなるもので、鉛直方向に延びるように形成され駆動機構１６（図１（ａ）参照）に連結された円柱状のシャフトからなる連結部１５ａと、この連結部１５ａの上端部に設けられ基板１０を支持する円柱状の基板支持部１５ｂとを有している。
　昇降部材１５は、基板１０を支持しない状態において、基板支持部１５ｂが貫通ガイド孔５２の収容部５４内に配置されるとともに、連結部１５ａが貫通ガイド孔５２のガイド部５３内に配置されるように構成されている。
　本実施の形態の昇降部材１５は、一体的に形成され、例えば図２（ａ）に示すように、連結部１５ａの外径が基板支持部１５ｂの外径より小さくなるようにそれぞれの寸法が設定されている。
　ここで、基板支持部１５ｂの連結部１５ａ側の部分には、連結部１５ａに向って外径が小さくなるようにテーパ状に形成されたシール位置決め部１５ｄが設けられ、このシール位置決め部１５ｄの連結部１５ａ側の部分に、連結部１５ａより小径の円柱状の溝部１５ｅが設けられている。
　そして、昇降部材１５の連結部１５ａと基板支持部１５ｂとの間に、貫通ガイド孔５２の収容部５４をガイド部５３に対して密閉するＯリング１７（シール部材）が設けられている。
　本実施の形態のＯリング１７は、昇降部材１５の溝部１５ｅの外径より若干小さな内径を有し、かつ、基板支持部１５ｂの外径より小さい外径を有するように形成されている。
　そして、Ｏリング１７を昇降部材１５に取り付けた場合に、Ｏリング１７が上述したシール位置決め部１５ｄ及び溝部１５ｅに密着するとともに、連結部１５ａの上部の面１５ｆに接触するように、シール位置決め部１５ｄ、溝部１５ｅ及び連結部１５ａの上部の面１５ｆの形状と寸法が設定され、またＯリング１７の寸法が設定されている。
　さらに、図２（ｂ）に示すように、Ｏリング１７は、昇降部材１５を貫通ガイド孔５２内に配置した場合に貫通ガイド孔５２の支持壁部５５と密着するように、Ｏリング１７の寸法並びに貫通ガイド孔５２の支持壁部５５の形状及び寸法が設定されている。
　なお、本実施の形態の昇降部材１５は、基板支持部１５ｂの上面に、例えば樹脂やゴム等の弾性部材からなる平板状の保護部材１５ｃが装着されている。
　この保護部材１５ｃは、図２（ｄ）に示すように、昇降部材１５によって基板１０を支持した場合に、基板１０の裏面に傷をつけず、また、ＥＳＤ（剥離帯電）等の問題を発生させない役割を果たすためのものである。
　以上述べた本実施の形態の吸着装置５では、昇降部材１５の連結部１５ａと基板支持部１５ｂとの間にシール部材としてＯリング１７が設けられ、このＯリング１７を貫通ガイド孔５２に設けた支持壁部５５と密着させて支持することで貫通ガイド孔５２の収容部５４をガイド部５３に対して密閉するようにしたことから、冷却用ガスを用いて基板１０の冷却を行う場合に、冷却用空間５１に導入された冷却用ガスが貫通ガイド孔５２のガイド部５３側に漏れることを防止でき、これにより基板１０の冷却効率を向上させることができる。
　また、本実施の形態においては、昇降部材１５側にＯリング１７を設けることによって、貫通ガイド孔５２の内径をできるだけ小さくすることができ、これにより吸着部分の有効面積を犠牲にすることなく冷却用ガスが貫通ガイド孔５２のガイド部５３側へ漏れることを確実に防止することができる。
　このように、本実施の形態の吸着装置５によれば、基板の冷却効率が高いコンパクトな構成の真空処理装置１を提供することができる。
　また、本実施の形態においては、昇降部材１５が、その自重によってＯリング１７が貫通ガイド孔５２の収容部５４の支持壁部５５と密着するように構成されていることから、Ｏリング１７を収容部５４の支持壁部５５に押し付ける構成が不要になり、その結果、簡素な構成の吸着装置並びに真空処理装置を提供することができる。
　なお、本発明は上述した実施の形態に限られず、種々の変更を行うことができる。
　例えば、上記実施の形態では、昇降部材１５にテーパ状のシール位置決め部１５ｄを設けるとともに、貫通ガイド孔５２にテーパ状の支持壁部５５を設けるようにしたが、本発明はこれに限られず、例えば昇降部材１５のシール位置決め部１５ｄ及び貫通ガイド孔５２の支持壁部５５を、昇降部材１５及び貫通ガイド孔５２の長手方向と直交するように設けることもできる。
　さらに、本発明はスパッタリング装置のみならず、例えば蒸着装置やエッチング装置等の種々の真空処理装置に適用することができる。
　１…スパッタリング装置（真空処理装置）
　２…真空槽
　３…ターゲット
　４…ステージ
　５…吸着装置
１０…基板
１１…吸着電極
１５…昇降部材
１５ａ…連結部
１５ｂ…基板支持部
１５ｃ…保護部材
１５ｄ…シール位置決め部
１５ｅ…溝部
１５ｆ…上部の面
１６…駆動機構
１７…Ｏリング（シール部材）
５０…本体部
５１…冷却用空間
５２…貫通ガイド孔
５３…ガイド部
５４…収容部
５５…支持壁部 

Claims (4)

  1. 　誘電体中に基板を吸着保持するための吸着電極を有し、吸着側の部分に前記基板をガスを用いて冷却する冷却用空間が設けられた本体部と、
    　前記本体部の冷却用空間に連通し且つ当該本体部を貫通する貫通ガイド孔を介して前記基板を支持して昇降させる昇降部材とを有し、
    　前記昇降部材は、前記基板を支持する基板支持部と、当該基板支持部に連結され駆動機構によって駆動される連結部とを有するとともに、前記基板を支持しない状態において、前記基板支持部が、前記貫通ガイド孔の前記冷却用空間に連通する収容部内に配置されるとともに、前記連結部が、前記貫通ガイド孔の収容部に連通するガイド部内に配置されるように構成され、
    　前記昇降部材の前記連結部と前記基板支持部との間に、前記貫通ガイド孔の収容部に設けた支持壁部と密着して支持することで前記貫通ガイド孔のガイド部を前記収容部に対して密閉するシール部材が設けられている吸着装置。
  2. 　前記昇降部材は、その自重によって前記シール部材が前記貫通ガイド孔の収容部の支持壁部と密着するように構成されている請求項１記載の吸着装置。
  3. 　前記シール部材がＯリングである請求項１又は２のいずれか１項記載の吸着装置。
  4. 　真空槽と、
    　前記真空槽内に設けられた請求項１記載の吸着装置とを備え、
    　前記吸着装置によって吸着保持された基板に対して所定の処理を行うように構成されている真空処理装置。 
PCT/JP2020/022121 2019-07-02 2020-06-04 吸着装置及び真空処理装置 WO2021002141A1 (ja)

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JPH06349750A (ja) * 1993-05-05 1994-12-22 Applied Materials Inc 半導体処理中に基板の熱移動を確保する装置及び方法
JP2008187102A (ja) * 2007-01-31 2008-08-14 Tokyo Electron Ltd 基板処理装置
JP2010021405A (ja) * 2008-07-11 2010-01-28 Hitachi High-Technologies Corp プラズマ処理装置
WO2013054776A1 (ja) * 2011-10-13 2013-04-18 株式会社アルバック 真空処理装置

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JP2000195935A (ja) * 1998-12-25 2000-07-14 Nec Kyushu Ltd 半導体製造装置
KR100646318B1 (ko) * 2005-08-19 2006-11-23 동부일렉트로닉스 주식회사 플라즈마 식각 장치
JP6224958B2 (ja) * 2013-02-20 2017-11-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN105810612B (zh) * 2016-03-24 2018-12-21 京东方科技集团股份有限公司 一种显示基板冷却设备

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JPH0432230A (ja) * 1990-05-29 1992-02-04 Tokyo Electron Ltd ドライ洗浄装置
JPH06349750A (ja) * 1993-05-05 1994-12-22 Applied Materials Inc 半導体処理中に基板の熱移動を確保する装置及び方法
JP2008187102A (ja) * 2007-01-31 2008-08-14 Tokyo Electron Ltd 基板処理装置
JP2010021405A (ja) * 2008-07-11 2010-01-28 Hitachi High-Technologies Corp プラズマ処理装置
WO2013054776A1 (ja) * 2011-10-13 2013-04-18 株式会社アルバック 真空処理装置

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