CN113939903A - 吸附装置以及真空处理装置 - Google Patents

吸附装置以及真空处理装置 Download PDF

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CN113939903A
CN113939903A CN202080040321.8A CN202080040321A CN113939903A CN 113939903 A CN113939903 A CN 113939903A CN 202080040321 A CN202080040321 A CN 202080040321A CN 113939903 A CN113939903 A CN 113939903A
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阪上弘敏
大野哲宏
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Ulvac Inc
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Abstract

本发明提供一种在使用冷却用气体冷却基板的吸附装置中防止冷却用气体的泄漏从而提高基板的冷却效率的技术。在本发明中，升降构件(15)构成为在不支承基板(10)的状态下，连结部(15a)配置在贯通孔(52)的引导部(53)内，并且基板支承部(15b)配置在贯通引导孔(52)的收容部(54)内。在升降构件(15)的连结部(15a)与基板支承部(15b)之间设有O形环(17)，通过与设置在贯通引导孔(52)的收容部(54)的支承壁部(55)密合地支承该O型环而将贯通引导孔(52)的收容部(54)相对于引导部(53)密封。

Description

吸附装置以及真空处理装置
技术领域
本发明涉及在真空中吸附保持基板的吸附装置，特别涉及使用冷却用气体冷却基板的吸附装置的技术。
背景技术
以往，为了精密地进行基板的温度控制，吸附装置被广泛应用在溅射装置等中。在真空中在玻璃等绝缘性基板上进行成膜等处理的装置中，广泛应用了利用梯度力吸附保持绝缘性基板的吸附装置。
近年来，在这种技术领域中，为了应对吸附的基板的大小不断增大，提出了如下方案：在吸附装置与基板之间设置冷却用空间，向该冷却用空间导入气体来冷却基板，从而进行其温度控制。
例如，如图3所示，在设置于载置台104上的现有的吸附装置105中，通过经由未图示的孔部向主体部150的冷却用空间151内导入冷却用气体来冷却基板110的下表面。
而且，在与冷却用空间151连通的贯通引导孔152内设有使基板110升降的升降构件115。
在现有技术中，在将冷却用气体导入冷却用空间151内之后，在将升降构件115的形成得比驱动部115a外径更大的基板支承部115b的下表面按压在贯通引导孔152的收容部154的底面155的状态下，进行基板110的冷却。
但是，在现有技术中存在如下问题，由于升降构件115的基板支承部115b的下表面与收容部154的底面155之间形成微小间隙，冷却用气体从该间隙向引导部153侧泄漏，导致难以提高冷却效率。
现有技术文献
专利文献
专利文献1：日本专利第4473145号公报。
发明内容
发明要解决的问题
本发明是为了解决上述现有技术的问题而完成的，其目的在于提供一种在使用冷却用气体冷却基板的吸附装置中，通过防止冷却用气体的泄漏来提高基板的冷却效率的技术。
用于解决问题的方案
为了解决上述问题而完成的本发明是一种吸附装置，其具有：主体部，其具有用于在电介质中吸附保持基板的吸附电极，在吸附侧的部分设有用气体冷却所述基板的冷却用空间；升降构件，其经由贯通引导孔支承所述基板并使其升降，所述贯通引导孔与所述主体部的冷却用空间连通且贯通该主体部，其中，所述升降构件构成为，具有支承所述基板的基板支承部以及与该基板支承部连结并被驱动机构驱动的连结部，并且，在不支承所述基板的状态下，所述基板支承部配置在与所述贯通引导孔的所述冷却用空间连通的收容部内，并且，所述连结部配置在与所述贯通引导孔的收容部连通的引导部内，在所述升降构件的所述连结部与所述基板支承部之间设有密封构件，通过与设置在所述贯通引导孔的收容部的支承壁部密合而支承所述密封构件，从而将所述贯通引导孔的引导部相对于所述收容部密封。
本发明是一种吸附装置，其中，所述升降构件构成为利用其自重使所述密封构件与所述贯通引导孔的收容部的支承壁部密合。
本发明是一种吸附装置，其中，所述密封构件是O形环。
本发明是一种真空处理装置，其构成为具有真空槽以及设置在所述真空槽内的上述任一种吸附装置，对被所述吸附装置吸附保持的基板进行规定的处理。
发明效果
在本发明的吸附装置中，在升降构件的连结部与基板支承部之间设有密封构件，通过与设置在贯通引导孔的支承壁部密合地支承该密封构件来将贯通引导孔的引导部相对于收容部密封，因此，在使用冷却用气体冷却基板的吸附装置中，能够防止导入冷却用空间的冷却用气体向贯通引导孔的引导部侧泄漏，由此能够提高基板的冷却效率。
此外，在本发明中，通过在升降构件侧设置密封构件，能够使贯通引导孔的内径尽可能地小，由此，无需牺牲吸附部分的有效面积就能够可靠地防止冷却用气体向贯通引导孔的引导部侧泄漏。
像这样，根据本发明的吸附装置，能够提供基板的冷却效率高的真空处理装置。
在本发明中，在升降构件构成为利用其自重使密封构件与主体部的收容部的支承壁部密合的情况下，由于无需将密封构件按压在收容部的支承壁部的结构(弹簧等)，因此能够提供结构简单的吸附装置以及真空处理装置。
附图说明
图1的(a)是作为本发明涉及的真空处理装置的一个实施方式的溅射装置的概略结构图；(b)是表示在同一溅射装置中使用的吸附装置的实施方式的概略结构图，是用于说明贯通引导孔的图；(c)是表示同一溅射装置中使用的吸附装置的实施方式的概略结构图，是用于说明在贯通引导孔内配置了升降构件的状态的图。
图2的(a)是表示本实施方式的升降构件的主要部分的剖视图；(b)是表示配置在贯通引导孔内的升降构件的主要部分的剖视图；(c)是本实施方式的吸附装置的主要部分剖视图，是表示将升降构件配置在主体部的贯通引导孔内的状态的图；(d)是本实施方式的吸附装置的主要部分剖视图中表示利用升降构件支承基板的状态的图。
图3是表示现有的吸附装置的例子的概略结构图。
具体实施方式
以下，参照附图对本发明的实施方式进行说明。
图1的(a)是作为本发明涉及的真空处理装置的一个实施方式的溅射装置的概略结构图。图1的(b)是表示在同一溅射装置中使用的吸附装置的实施方式的概略结构图，是用于说明贯通引导孔的图；图1的(c)是表示同一溅射装置中使用的吸附装置的实施方式的概略结构图，是用于说明在贯通引导孔内配置了升降构件的状态的图。
图2的(a)是表示本实施方式的升降构件的主要部分的剖视图；图2的(b)是表示配置在贯通引导孔内的升降构件的主要部分的剖视图；图2的(c)是本实施方式的吸附装置的主要部分剖视图，是表示将升降构件配置在主体部的贯通引导孔内的状态的图；图2的(d)是本实施方式的吸附装置的主要部分剖视图，是表示利用升降构件支承基板的状态的图。
如图1的(a)所示，本实施方式的溅射装置1具有与未图示的真空排气系统连接的真空槽2。
该真空槽2内构成为导入溅射气体，在其内部的例如上部配置有靶材3。
该靶材3与未图示的溅射电源连接，被施加负的偏置电压。另外，溅射电源的正极侧与真空槽2一起接地。
在真空槽2内的载置台4上设有用于吸附保持基板(吸附对象)10的吸附装置5。
该吸附装置5构成为在由各种陶瓷等电介质制成的主体部50中设有多个吸附电极11，从未图示的吸附电源向这些吸附电极11分别供电。
如图1的(b)所示，在吸附装置5的主体部50的吸附侧的部分设有冷却基板10的冷却用空间51。
而且，在吸附装置5的主体部50内设有与冷却用空间51连通而向该空间导入冷却用气体的气体导入孔(未图示)。
在本发明中，例如能够使用氩(Ar)气、氮(N2)气、氦(He)气等稀有气体作为冷却用气体。
冷却用空间51通过在主体部50的吸附侧的部分形成凹部来设置，配置成与吸附在吸附装置5上的基板10的下表面相向。
在吸附装置5的主体部50设有与冷却用空间51连通并且贯通主体部50直到载置台4的多个贯通引导孔52。
在这些贯通引导孔52的内部分别设有用于经由贯通引导孔52支承并升降基板10来将基板10载置在吸附装置5上或使基板10从吸附装置5脱离的升降构件15。
贯通引导孔52具有以在竖直方向延伸的方式形成的引导部53，在贯通引导孔52的上端部设有与冷却用空间51连通的收容部54。
而且，在贯通引导孔52的引导部53与收容部54之间设有与后述的升降构件15的密封定位部15d相向，并且以从收容部54向引导部53内径变小的方式形成的锥状的支承壁部55(参照图2的(b))。
本实施方式的升降构件15由例如不锈钢等金属材料构成，具有：连结部15a，其由以在竖直方向延伸的方式形成且与驱动轴16(参照图1的(a))连结的圆柱状的轴构成；圆柱状的基板支承部15b，其设置在该连结部15a的上端部并支承基板10。
升降构件15构成为：在不支承基板10的状态下，基板支承部15b配置在贯通引导孔52的收容部54内，并且连结部15a配置在贯通孔52的引导部53内。
本实施方式的升降构件15一体地形成，例如，如图2的(a)所示，以连结部15a的外径小于基板支承部15b的外径的方式设定各自的尺寸。
在此，在基板支承部15b的连结部15a侧的部分设有以外径向连结部15a变小的方式形成锥状的密封定位部15d，在该密封定位部15d的连结部15a侧的部分设有直径比连结部15a小的圆柱状的槽部15e。
而且，在升降构件15的连结部15a与基板支承部15b之间设有O形环17(密封构件)，其将贯通引导孔52的收容部54相对于引导部53密封。
本实施方式的O形环17形成为具有比升降构件15的槽部15e的外径些许小的内径，且具有比基板支承部15b的外径小的外径。
而且，以在将O形环17安装在升降构件15的情况下，O形环17与上述密封定位部15d以及槽部15e密合，并且与连接部15a的上部的表面15f接触的方式，设定密封定位部15d、槽部15e和连接部15a的上部的表面15f的形状和尺寸，并设定O形环17的尺寸。
进而，如图2的(b)所示，以在将升降构件15配置在贯通引导孔52内的情况下O形环17与贯通引导孔52的支承壁部55密合的方式，设定O形环17的尺寸以及贯通引导孔52的支承壁部55的形状和尺寸。
另外，在本实施方式的升降构件15中，在基板支承部15b的上表面安装例如树脂、橡胶等弹性构件构成的平板状的保护构件15c。
如图2的(d)所示，该保护构件15c用于实现如下作用：在利用升降构件15支承基板10的情况下，不对基板10的背面造成损伤，并且不产生ESD(剥离带电)等问题。
在上述本实施方式的吸附装置5中，在升降构件15的连结部15a与基板支承部15b之间设有O形环17作为密封构件，通过与设置在贯通引导孔52的支承壁部55密合地支承该O形环来将贯通引导孔52的收容部54相对于引导部53密封，因此，在使用冷却用气体进行基板10的冷却的情况下，能够防止导入冷却用空间51的冷却用气体向贯通引导孔52的引导部53侧泄漏，由此能够提高基板10的冷却效率。
此外，在本实施方式中，通过在升降构件15侧设置O形环17，能够使贯通引导孔52的内径尽可能地小，由此，无需牺牲吸附部分的有效面积就能够可靠地防止冷却用气体向贯通引导孔52的引导部53侧泄漏。
像这样，根据本实施方式的吸附装置5，能够提供基板的冷却效率高的结构紧凑的真空处理装置1。
此外，在本实施方式中，升降构件15构成为通过其自重使O形环17与贯通引导孔52的收容部54的支承壁部55密合，因此，不需要将O形环17按压在收容部54的支承壁部55的结构，其结果是能够提供结构简单的吸附装置以及真空处理装置。
另外，本发明不限于上述实施方式，能够进行各种变更。
例如，在上述实施方式中，在升降构件15设置了锥状的密封定位部15d，并且在贯通引导孔52设置了锥状的支承壁部55，但本发明不限于此，例如能够将升降构件15的密封定位部15d以及贯通引导孔52的支承壁部55设置为与升降构件15和贯通引导孔52的长边方向正交。
进而，本发明不仅能够应用于溅射装置，还能够应用于例如蒸镀装置、蚀刻装置等各种真空处理装置。
附图标记说明
1：溅射装置(真空处理装置)；
2：真空槽；
3：靶材；
4：载置台；
5：吸附装置；
10：基板；
11：吸附电极；
15：升降构件；
15a：连结部；
15b：基板支承部；
15c：保护构件；
15d：密封定位部；
15e：槽部；
15f：上部的表面；
16：驱动机构；
17：O形环(密封构件)；
50：主体部；
51：冷却用空间；
52：贯通引导孔；
53.引导部；
54：收容部；
55：支承壁部。

Claims (4)

1.一种吸附装置，其具有：
主体部，其具有用于在电介质中吸附保持基板的吸附电极，在吸附侧的部分设有用气体冷却所述基板的冷却用空间；以及
升降构件，其经由贯通引导孔支承所述基板并使其升降，所述贯通引导孔与所述主体部的冷却用空间连通且贯通该主体部，其中，
所述升降构件构成为具有支承所述基板的基板支承部以及与该基板支承部连结并被驱动机构驱动的连结部，并且，在不支承所述基板的状态下，所述基板支承部配置在与所述贯通引导孔的所述冷却用空间连通的收容部内，并且所述连结部配置在与所述贯通引导孔的收容部连通的引导部内，
在所述升降构件的所述连结部与所述基板支承部之间设有密封构件，通过与设置在所述贯通引导孔的收容部的支承壁部密合地支承所述密封构件，从而将所述贯通引导孔的引导部相对于所述收容部密封。
2.根据权利要求1所述的吸附装置，其中，
所述升降构件构成为利用其自重使所述密封构件与所述贯通引导孔的收容部的支承壁部密合。
3.根据权利要求1或2中的任一项所述的吸附装置，其中，
所述密封构件是O形环。
4.一种真空处理装置，其具有：
真空槽；以及
设置在所述真空槽内的权利要求1所述的吸附装置，
所述真空处理装置构成为对被所述吸附装置吸附保持的基板进行规定的处理。
CN202080040321.8A 2019-07-02 2020-06-04 吸附装置以及真空处理装置 Pending CN113939903A (zh)

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JPH0432230A (ja) * 1990-05-29 1992-02-04 Tokyo Electron Ltd ドライ洗浄装置
US5366002A (en) * 1993-05-05 1994-11-22 Applied Materials, Inc. Apparatus and method to ensure heat transfer to and from an entire substrate during semiconductor processing
JP2000195935A (ja) * 1998-12-25 2000-07-14 Nec Kyushu Ltd 半導体製造装置
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JP2010021405A (ja) * 2008-07-11 2010-01-28 Hitachi High-Technologies Corp プラズマ処理装置
JP5876065B2 (ja) * 2011-10-13 2016-03-02 株式会社アルバック 真空処理装置
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