WO2020261748A1 - スパッタリングターゲット及びスパッタリングターゲットの製造方法 - Google Patents
スパッタリングターゲット及びスパッタリングターゲットの製造方法 Download PDFInfo
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- WO2020261748A1 WO2020261748A1 PCT/JP2020/017912 JP2020017912W WO2020261748A1 WO 2020261748 A1 WO2020261748 A1 WO 2020261748A1 JP 2020017912 W JP2020017912 W JP 2020017912W WO 2020261748 A1 WO2020261748 A1 WO 2020261748A1
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- atomic
- thin film
- sputtering target
- oxide semiconductor
- mobility
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 229910052718 tin Inorganic materials 0.000 claims abstract description 136
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 131
- 229910052738 indium Inorganic materials 0.000 claims abstract description 82
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 23
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 21
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 20
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- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 46
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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Definitions
- the present invention relates to a sputtering target and a method for manufacturing the sputtering target.
- a thin-film transistor (TFT) using an In-Ga-Zn-O oxide semiconductor film (IGZO) as an active layer is higher than a conventional TFT using an amorphous silicon film as an active layer.
- IGZO In-Ga-Zn-O oxide semiconductor film
- Patent Document 1 discloses an organic EL display device in which the active layer of a TFT that drives an organic EL element is composed of IGZO.
- Patent Document 2 discloses a thin film transistor in which the channel layer (active layer) is composed of a-IGZO and the mobility is 5 cm 2 / Vs or more.
- Patent Document 3 discloses a thin film transistor in which the active layer is composed of IGZO and the on / off current ratio is 5 digits or more.
- JP-A-2009-31750 Japanese Unexamined Patent Publication No. 2011-216574 WO2010 / 092810
- an object of the present invention is to provide a sputtering target for producing a high-performance oxide semiconductor thin film in place of IGZO and a method for producing the same.
- the sputtering target according to one embodiment of the present invention is composed of an oxide sintered body containing indium, tin, and germanium, and the atomic ratio of germanium to the total of indium, tin, and germanium is 0. It is .07 or more and 0.40 or less, and the atomic ratio of tin to the total of indium, tin, and germanium is 0.04 or more and 0.60 or less.
- an oxide semiconductor thin film having a carrier concentration of 5 ⁇ 10 19 or less can be obtained.
- an oxide semiconductor thin film having a mobility of 10 or more can be obtained without depending on the content of Ge.
- the atomic ratio of indium to the total sum of indium, tin, and germanium is 0.3 or more, and the atomic ratio of germanium to the total sum of indium, tin, and germanium is 0.10 or more and 0.25 or less. It may be. As a result, an amorphous oxide semiconductor thin film can be obtained independently of the Sn content.
- the oxide sintered body is a first element which is at least one element selected from Si, Ti, Mg, Ca, Ba, Zr, Al, W, Ta, Hf, and B. It may further contain elements.
- the atomic ratio of indium, tin, germanium, and the first element to the sum of the first elements may be 0.10 or less.
- the oxide sintered body may further contain a second element which is at least one element selected from Sr, Ga and Zn.
- the relative density may be 97% or more.
- the specific resistance value may be 0.1 m ⁇ ⁇ cm or more and 10 m ⁇ ⁇ cm or less.
- the specific resistance value in the thickness direction may be within 0.8 or more and 1.2 or less with respect to the average value of the bulk specific resistance values.
- the oxide sintered body may contain at least one compound phase of In—O phase, In—Sn—O phase, and In—Ge—O phase.
- a molded body is formed by mixing indium oxide powder, tin oxide powder, and germanium oxide powder, and the temperature is 1500 ° C. or higher and 1600 ° C. or lower.
- the molded body is fired in an oxygen atmosphere to produce a sputtering target having an oxide sintered body.
- a sputtering target for manufacturing an oxide semiconductor thin film having high characteristics instead of IGZO instead of IGZO, and a manufacturing method thereof.
- FIG. 5 is a graph showing the Ge concentration dependence of the carrier concentration in an In—Sn—Ge—O-based material formed by fixing the Sn content to 5 atomic%. It is a graph which shows the evaluation result about the crystallinity of a thin film when the Ge content was fixed to 5 atomic%, and the Sn content was shaken to 5 atomic%, 20 atomic% and 40 atomic%. It is a flow chart which shows the manufacturing process of the sputtering target which concerns on this embodiment.
- the sputtering target oxide semiconductor sputtering target
- the characteristics of the oxide semiconductor film formed by using this sputtering target will be described.
- the oxide semiconductor film is used as an active layer (inversion layer) in a thin film transistor such as a so-called bottom gate type field effect transistor.
- oxide semiconductor material having high mobility ITO (In—Sn—O) type, IGZO (In—Ga—Zn—O) type and the like are generally typical. Since these oxide semiconductor materials have amorphous crystallinity immediately after film formation, patterning by a wet etching method can be easily performed. After patterning, it is activated by heat treatment to develop desired transistor characteristics.
- FIG. 1 shows the experimental results of evaluating the Ge content (atomic%) and the crystallinity of the obtained thin film in the In—Ge—O-based material formed by the sputtering method.
- FIGS. 2 and 3 show the measurement results of the mobility and carrier concentration of each of the above samples with the Hall effect measuring device.
- the mobility tends to decrease as the Ge content increases.
- the samples having a Ge content of 4.3 atomic% and 11 atomic% show a high value of 1 ⁇ 10 20 (/ cm 3 ), but the Ge content is 20.
- Atomic% samples drop to less than 1 ⁇ 10 18 (/ cm 3 ).
- the preferred range of carrier concentration is generally on the order of 10 18 to 10 19 (/ cm 3 ), and if it is less than 1 ⁇ 10 18 (/ cm 3 ), the mobility is significantly reduced and 1 ⁇ 10 20 If it exceeds (/ cm 3 ), the reliability of the switching operation is significantly reduced.
- FIGS. 4 and 5 show the Sn concentration dependence of crystallinity and mobility in In—Sn—Ge—O materials.
- a Hall effect measuring device was used to measure the mobility.
- a thin film sample in which the Ge content was fixed at 12 atomic%, and after film formation, the thin film sample was annealed in the air at 350 ° C (“ ⁇ ” in FIG. 5) and 400 ° C (“ ⁇ ” in FIG. 5) for 1 hour. was evaluated.
- the samples having a Sn content of 2.4 atomic%, 4.3 atomic% and 7.5 atomic% were all amorphous. From this, it is inferred that the In—Sn—Ge—O oxide thin film formed by the sputtering method is amorphous regardless of the Sn content.
- FIG. 5 no significant decrease in mobility was observed up to the Sn content of 30 atomic% (generally around 30 cm 2 / Vs), and the Sn content was increased to 60 atomic%. Even in this case, mobility of 10 cm 2 / Vs or more was obtained.
- FIGS. 6 and 7 show the Ge concentration dependence of the mobility and carrier concentration in the In—Sn—Ge—O-based material formed by fixing the Sn content to 5 atomic%.
- a Hall effect measuring device was used to measure the mobility and carrier concentration.
- a ternary sputtering method was adopted in which three targets of indium oxide, germanium oxide, and tin oxide were simultaneously sputtered in an oxygen atmosphere. After the film formation, the thin film samples that were annealed in the air at 350 ° C. (“ ⁇ ” in each figure) and 400 ° C. (“ ⁇ ” in each figure) for 1 hour were evaluated.
- the mobility was 10 cm 2 / Vs or more for all the samples. Further, as shown in FIGS. 6 and 7, the Ge content is in the range of 10 to 25 atomic%, the mobility is 15 cm 2 / Vs or more, and the carrier concentration is 1 ⁇ 10 18 to 1 ⁇ 10 19 (/ cm 3). ) Was confirmed.
- FIGS. 6 and 7 are for a sample formed by ternary sputtering, and the In—Sn—Ge—O system having a Ge content of 15 atomic% (Sn content of 5 atomic%).
- the mobility and carrier concentration measured for the sample formed by using the sintered body target are also shown in FIGS. 6 and 7.
- “ ⁇ " indicates a thin film sample that has been annealed at 350 ° C. in the air and " ⁇ " at 400 ° C. for 1 hour.
- the sintered target also shows the same electrical characteristics as the sample formed by the ternary sputtering method, the mobility is about 20 to 30 cm 2 / Vs, and the carrier concentration is about 5 ⁇ . It was confirmed that the value was 10 18 to 1 ⁇ 10 19 (/ cm 3 ).
- FIG. 8 shows the evaluation results of the crystallinity of the thin film when the Ge content was fixed at 5 atomic% and the Sn content was changed to 5 atomic%, 20 atomic% and 40 atomic%.
- a thin film sample that was annealed at 350 ° C. for 1 hour after film formation was evaluated.
- an amorphous In—Sn—Ge—O thin film can be obtained by setting the Sn content to 20 atomic% or more.
- the sputtering target may be a planar type target or a cylindrical rotary target.
- the sputtering target is composed of an oxide semiconductor thin film containing In, Sn and Ge.
- the atomic ratio of Ge / (In + Sn + Ge) is 0.07 or more and 0.4 or less.
- the upper and lower limits of the composition are rounded to the first decimal place (the same applies hereinafter).
- transistor characteristics having a mobility of 10 cm 2 / Vs or more can be obtained.
- the oxide semiconductor can be easily patterned using, for example, a oxalic acid-based etching solution.
- an oxide semiconductor thin film having a carrier concentration of 5 ⁇ 10 19 (/ cm 3 ) or less can be obtained.
- an oxide semiconductor thin film having a mobility of 10 cm 2 / Vs or more can be obtained regardless of the content of Ge. ..
- the active layer is composed of an oxide semiconductor thin film containing Sn
- the chemical resistance of the active layer can be enhanced. Therefore, it is not necessary to provide an etching stopper layer that protects the active layer from the etching solution in the patterning step of the source / drain electrode of the thin film transistor.
- the source / drain electrode can be easily formed by forming a metal layer using the active layer as a base film and then patterning the metal layer by a wet etching method.
- a oxalic acid-based etchant (95% oxalic acid) can be typically used, and examples thereof include ITO-06N (Kanto Chemical Co., Ltd.).
- the atomic ratio of Ge / (In + Sn + Ge) is 0.07 or more and 0.40 or less, more preferably 0.10 or more and 0.25 or less.
- an amorphous oxide semiconductor thin film can be obtained independently of the Sn content.
- the Ge content in the above range, when the atomic ratio of In / (In + Sn + Ge) is 0.3 or more, the high mobility of 15 to 35 cm 2 / Vs and 10 19 (/ cm 3 ) are obtained. It is possible to achieve both low carrier concentrations below the order.
- Sputtering targets are Si (silicon), Ti (titanium), Mg (magnesium), Ca (calcium), Zr (zirconium), Al (aluminum), W (tungsten), Ta (tantalum), Hf (hafnium) and B. It may further contain a first element ( ⁇ ), which is at least one element selected from (boron). These first elements ( ⁇ ) are elements that act as carrier killer of the active layer, contribute to the reduction of the carrier concentration in the thin film, and can improve the reliability of the switching operation of the thin film transistor.
- the amount of the first element ( ⁇ ) added is not particularly limited, and when the sum of In, Sn, Ge, and ⁇ is In + Sn + Ge + ⁇ , for example, the atomic ratio of ⁇ / (In + Sn + Ge + ⁇ ) is 0.10 or less. As a result, it is possible to stably realize a high mobility of 10 cm 2 / Vs or more while reducing the carrier concentration to the order of 10 18 (/ cm 3 ) or less.
- the sputtering target may further contain a second element ( ⁇ ), which is at least one element selected from Sr (strontium), Ga (gallium), and Zn (zinc).
- ⁇ is at least one element selected from Sr (strontium), Ga (gallium), and Zn (zinc).
- Sr sinrontium
- Ga gallium
- Zn zinc
- These second elements ( ⁇ ) are also additive elements whose mobility as a carrier killer is not sufficient, but their mobility is small, and they contribute to the improvement of crystallinity and the reduction of the carrier concentration in the thin film for switching. The reliability of operation can be improved.
- the amount of the second element ( ⁇ ) added is not particularly limited, and when the sum of In, Sn, Ge, and ⁇ is In + Sn + Ge + ⁇ , for example, the atomic ratio of ⁇ / (In + Sn + Ge + ⁇ ) is 0.25 or less. As a result, it is possible to stably realize a high mobility of 10 cm 2 / Vs or more while reducing the carrier concentration to the order of 10 18 (/ cm 3 ) or less.
- the relative density of the sputtering target with respect to the theoretical density is 97% or more.
- the bulk resistivity value of the sputtering target is 0.1 m ⁇ ⁇ cm or more and 10 m ⁇ ⁇ cm or less.
- the bulk resistivity value in the thickness direction of the sputtering target is within 0.8 or more and 1.2 or less with respect to the average value of the bulk resistivity values.
- the oxide sintered body contains at least one compound phase of In—O phase, In—Sn—O phase, and In—Ge—O phase.
- the fluctuation of the threshold voltage can be suppressed to a predetermined voltage or less, so that a highly reliable switching operation can be ensured for a long period of time.
- PBTS Positive Bias
- NBTS Negative Bias Temperature Stress
- the amount of change in the threshold voltage before and after the PBTS test in which the gate voltage of + 30 V was continuously applied for 60 minutes at a temperature of 60 ° C. was 0 V or more and 1 V or less.
- the amount of change in the threshold voltage before and after the NBTS test in which the gate voltage of ⁇ 30 V was continuously applied for 60 minutes at a temperature of 60 ° C. was -1 V or more and 0 V or less.
- the active layer is formed by forming a film using a sputtering target composed of sintered bodies of In, Sn, and Ge oxides, and then heat-treating (annealing) the active layer at a predetermined temperature.
- a sputtering target composed of sintered bodies of In, Sn, and Ge oxides
- heat-treating (annealing) the active layer at a predetermined temperature.
- an oxide semiconductor thin film having the same or substantially the same composition as the target is formed.
- an active layer having transistor characteristics with a mobility of 10 cm 2 / Vs or more is formed.
- the sputtering target is composed of a sintered body in which oxides of In, Sn and Ge such as In 2 O 3 , SnO 2 and GeO 2 are used as raw material powders and these are mixed in the above composition ratio.
- the oxide sintered body contained in the sputtering target is formed by mixing In 2 O 3 powder, SnO 2 powder, and GeO 2 powder to form a molded product in an oxygen atmosphere of 1500 ° C. or higher and 1600 ° C. or lower. Formed by firing.
- the raw material powder is granulated by a spray-drying method capable of performing drying and granulation at the same time.
- a spray-drying method capable of performing drying and granulation at the same time.
- the raw material powder contains at least indium oxide powder, powdered tin oxide powder, and germanium oxide.
- One or more kinds of powders selected from strontium powder, gallium oxide powder, zinc oxide powder and the like may be mixed.
- the average particle size of the granulated powder is 500 ⁇ m or less.
- the average particle size of the granulated powder exceeds 500 ⁇ m, cracks and cracks in the molded product become remarkable, and granular spots are generated on the surface of the fired product.
- a fired body is used as a target for sputtering, it may cause abnormal discharge or generation of particles.
- the more preferable average particle size of the granulated powder is 20 ⁇ m or more and 100 ⁇ m or less.
- the change in volume (compression rate) before and after CIP (Cold Isostatic Press) molding is small, cracks in the molded body are suppressed, and a long molded body is stably produced. If the average particle size is less than 20 ⁇ m, the powder tends to fly up and is difficult to handle.
- the "average particle size” means a value in which the integrated% of the particle size distribution measured by the sieving particle size distribution measuring device is 50%.
- the average particle size the value measured by "Robot Sifter RPS-105M” manufactured by Seishin Enterprise Co., Ltd. is used.
- the granulated powder is molded at a pressure of 100 MPa / cm 2 or more. As a result, a sintered body having a relative density of 97% or more can be obtained. If the molding pressure is less than 100 MPa, the molded body is fragile, difficult to handle, and the relative density of the sintered body decreases.
- the CIP method is adopted as the molding method.
- the form of the CIP may be a typical vertical load type vertical system, and a horizontal load type horizontal system is preferable. This is because when a long plate-shaped molded product is manufactured by a vertical CIP, the thickness may vary due to the deviation of the powder in the mold, or the molded product may crack due to its own weight during handling.
- the molded product of the grain powder is fired at a temperature of 1500 ° C. or higher and 1600 ° C. or lower. If the firing temperature is less than 1500 ° C., the conductivity and relative density will be low, making it unsuitable for target applications. On the other hand, when the firing temperature exceeds 1600 ° C., some components are evaporated, the composition of the fired body is deviated, and the strength of the fired body is lowered due to the coarsening of the crystal grains.
- the molded product is fired in the air or an oxidizing atmosphere. As a result, the target oxide sintered body is stably produced.
- a powder having an average particle diameter of 0.3 ⁇ m or more and 1.5 ⁇ m or less is used for producing the granulated powder.
- the mixing / crushing time can be shortened, and the dispersibility of the raw material powder in the granulated powder is improved.
- the angle of repose of the granulated powder is preferably 32 ° or less. As a result, the fluidity of the granulated powder is increased, and the moldability and sinterability are improved.
- FIG. 9 is a flow chart showing a manufacturing process of the sputtering target according to the present embodiment.
- the manufacturing method is not limited to this method.
- the sputtering target manufacturing method includes a weighing step (step 101), a crushing / mixing step (step 102), a granulation step (step 103), a molding step (step 104), and a firing step (step 105). It has a processing step (step 106).
- Indium oxide powder, tin oxide powder, and germanium oxide powder are used as the raw material powder. Each of these powders is weighed, pulverized and mixed with a ball mill or the like, and wet pulverized with water or the like to produce a slurry (steps 101 and 102).
- the raw material powder for example, one in which the average particle size of the primary particles is adjusted to 0.3 ⁇ m or more and 1.5 ⁇ m or less is used.
- the crushing / mixing step can be performed in a relatively short time.
- the dispersibility of each oxide particle in the obtained granulated powder is improved.
- each raw material powder is appropriately set depending on the conditions for performing sputtering and the application of the film to be formed.
- silicon oxide powder, titanium oxide powder, magnesium oxide powder, calcium oxide powder, barium oxide powder, zirconium oxide powder, aluminum oxide powder, tungsten oxide powder, tantalum oxide powder, hafnium oxide powder, and oxidation At least one or more of metal oxide powders such as boron powder, strontium oxide powder, gallium oxide powder, and zinc oxide powder may be further mixed.
- a binder, a dispersant, or the like may be added to the mixture of the raw material powders.
- the raw material powder is granulated by drying and classifying the slurry (step 103). Granulation is carried out for the purpose of fixing the ratio of the compounding components, improving the handleability of the raw material powder, and the like. By granulating, the bulk density, tap density, and angle of repose of the powder can be adjusted, and the occurrence of cracks in the molded body is suppressed during CIP molding of a long target.
- the granulation method is not particularly limited, and it is possible to directly dry the slurry using a spray dryer or the like to granulate. In addition, a dry granulation method that does not use a slurry is also applicable.
- the granulated powder is produced when the average particle size of the granulated powder is 500 ⁇ m or less, preferably 20 ⁇ m or more and 100 ⁇ m or less. As a result, a relatively long molded body is stably produced. When the average particle size of the granulated powder exceeds 500 ⁇ m, granular dots are generated on the surface of the fired body. When such a fired body is used as a target for sputtering, it causes abnormal discharge or generation of particles.
- the granulated powder preferably has high fluidity, and for example, the raw material powder is granulated so that the angle of repose is 32 ° or less. As a result, the fluidity of the granulated powder is increased, and the moldability and calcinability are improved. When the angle of repose is large, cracks are likely to occur in the molded body in the molding step (CIP), and color unevenness is likely to occur in the fired body in the firing step.
- CIP molding step
- the angle of repose of the granulated powder is controlled as follows. For example, when the slurry is dried, crushed and classified by a roll mill as a granulation method, the angle of repose is controlled by the treatment time and the number of treatments of the powder by the roll mill. On the other hand, when the granulation method is directly dried using a spray dryer or the like, the angle of repose is controlled by the slurry concentration, the viscosity, the conditions of the spray dryer and the like.
- the bulk density of the granulated powder is controlled as follows. For example, when the slurry is dried and crushed and classified with a roll mill as a granulation method, the bulk density is controlled by crushing and classifying the dried product once compressed by a press with a roll mill. On the other hand, when the granulation method is directly dried using a spray dryer or the like, the bulk density is controlled by the slurry concentration, the viscosity, the conditions of the spray dryer and the like.
- the granulated powder is molded into a predetermined shape (step 104). Typically, it is formed into a rectangular plate shape that gives the desired long target.
- the molding method the CIP method is typically adopted.
- a die pressing method or the like may be adopted.
- the molding pressure is 100 MPa / cm 2 or more.
- the molding pressure is less than 100 MPa, the molded body is fragile, difficult to handle, and the relative density of the sintered body tends to decrease.
- the molding pressure by setting the molding pressure to 100 MPa / cm 2 or more, a sintered body having a relative density of 97% or more can be obtained.
- Molding can be performed by either CIP or die pressing as long as a pressure of 100 MPa / cm 2 or more can be obtained.
- a pressure of 100 MPa / cm 2 or more can be obtained.
- the typical structure of CIP is a vertical load type (hereinafter referred to as vertical CIP) in which a pressure vessel for storing a pressure medium is arranged vertically.
- vertical CIP vertical load type
- warpage is likely to occur due to the nature of the isotropic pressure press. In the case of a molded product having a size of more than 2000 mm, this warpage causes cracking in handling in a subsequent process or the like.
- the molded product of the granulated powder is fired at a temperature of 1500 ° C. or higher and 1600 ° C. or lower (step 105). If the firing temperature is less than 1500 ° C., both the conductivity and the relative density become low, which makes it unsuitable for target applications. On the other hand, when the firing temperature exceeds 1600 ° C., the evaporation of any of the components becomes intense, and the composition of the fired body tends to deviate. Further, the coarsening of the crystal grains may cause a decrease in the strength of the fired body. By setting the firing temperature to 1500 ° C. or higher and 1600 ° C. or lower, a high-density (relative density 97% or higher) fired body is stably produced.
- the firing time (holding time at the firing temperature) is not particularly limited, and is, for example, 2 hours or more and 20 hours or less. As a result, a fired body for an oxide sputtering target having a relative density of 97% or more can be obtained.
- the atmosphere inside the furnace at the time of firing is considered to be the atmosphere or an oxidizing atmosphere.
- the pressure at the time of firing is, for example, normal pressure.
- a fired product having a specific resistance of 0.1 to 10 m ⁇ ⁇ cm can be obtained.
- the specific resistance of the fired body tends to decrease as the firing temperature is higher.
- it is preferable that the firing temperature is high.
- the fired body produced as described above is machined into a plate shape having a desired shape, size, and thickness to produce a sputtering target made of an In—Sn—Ge—O-based sintered body. (Step 106).
- the sputtering target is integrated with the backing plate by brazing.
- a long sputtering target having a length exceeding 1000 mm in the longitudinal direction can be produced.
- a large sputtering target that does not have a divided structure can be produced, so that deterioration of the film characteristics that may occur due to sputtering of the bonding material (wax material) that has penetrated into the gap (seam) of the divided portion is prevented, and stable formation is achieved.
- Membranes are possible.
- particles caused by reattachment (redepot) of sputtered particles deposited in the gap are less likely to be generated.
- weighing, the grinding and mixing process, in the raw material powder, for GeO 2 powder, by its crystallinity, may dispersibility in the slurry are different.
- the tetragonal GeO 2 crystals have the property of being difficult to dissolve in water, like In 2 O 3 and SnO 2 .
- hexagonal GeO 2 crystals have the property of being soluble in water. Therefore, during wet pulverization, by dissolving the hexagonal GeO 2 powder in a solvent (for example, pure water), the dispersibility of the GeO 2 component in the slurry can be further improved during wet pulverization.
- X-ray diffraction is used to appropriately adjust the mixing ratio of hexagonal crystals and tetragonal crystals in the GeO 2 crystal.
- the intensity ratio is a ratio of peak heights.
- X-ray diffractometer RINT manufactured by Rigaku Co., Ltd. Scanning method: 2 ⁇ / ⁇ method Target: Cu Tube voltage: 40kV Tube current: 20mA Scan speed: 2.000 ° / min Sampling width: 0.050 ° Divergence slit: 1 ° Scattering slit: 1 ° Light receiving slit: 0.3 mm
- FIG. 10 is a graph showing the distribution of specific resistance values in the depth direction of the sputtering target.
- the firing atmosphere and firing conditions By adjusting the firing atmosphere and firing conditions, it is possible to manufacture an oxide target with a uniform specific resistance value (bulk specific resistance) in the depth direction (thickness direction) from the surface of the sputtering target within the range of use as a product. Since the resistivity value is uniform in the depth direction, a film of the same quality is formed from the start to the end of film formation.
- the bulk resistivity value in the thickness direction is 0.8 or more and 1.2 or less with respect to the average value of the bulk resistivity values.
- the germanium oxide powder a mixed powder of hexagonal germanium oxide (GeO 2 ) and tetragonal germanium oxide (GeO 2 ) may be used, or hexagonal germanium oxide (GeO) may be used. Only 2 ) may be used.
- the germanium oxide powder in which the intensity ratio (tetragonal / tetragonal) between the main peak of the hexagonal crystal and the main peak of the tetragonal crystal is adjusted to 0.15 or less is used.
- the indium oxide powder cubic indium oxide (In 2 O 3 ) is used, and as the tin oxide powder, tetragonal tin oxide (SnO 2 ) is used.
- the specific resistance in the depth direction is used.
- a sintered body having a more uniform value can be obtained.
- the bulk resistivity value in the thickness direction is within 0.97 or more and 1.05 or less with respect to the average value of the bulk resistivity values.
- Table 1 is a table showing the relationship between the firing temperature (° C.) and the relative density (%). Further, in Table 1, as a mixed powder of hexagonal germanium oxide and tetragonal germanium oxide, the intensity ratio (tetragonal / tetragonal) between the main peak of the hexagonal crystal and the main peak of the tetragonal crystal is 0.15. Larger ones are used.
- the relative density of the sintered body is improved. Further, by setting the firing temperature to 1500 ° C. or higher, a sintered body having a relative density of 97% or higher can be obtained. Further, by setting the firing temperature to 1500 ° C. or higher, the specific resistance of the sintered body becomes 10 m ⁇ ⁇ cm or less.
- FIG. 11 is an XRD measurement result of the sintered body.
- the XRD pattern of the oxide sintered body is shown in the uppermost stage, and the In 2 O 3 phase, the In 2 (Ge 2 O 7 ) phase, and the In 4 Sn 3 O 12 are shown in order from the XRD pattern downward.
- the peak position (2 ⁇ ) of each solid phase derived from is shown.
- the sputtering target contains at least one compound phase of In—O phase, In—Sn—O phase, and In—Ge—O phase.
- FIG. 12 shows the XRD measurement results of the GeO 2 raw material powder.
- the XRD pattern of the hexagonal GeO 2 raw material powder is shown at the top, and the hexagonal GeO 2 raw material powder is immersed in pure water for 12 hours and then dried.
- the XRD pattern of the two raw material powders is shown, and below that, the peak position (2 ⁇ ) derived from the hexagonal GeO 2 phase is shown.
- Results in Figure 12 shows a front flooding, that there is no change in the XRD pattern of GeO 2 raw material powder of hexagonal drying after immersion. That is, the manufacturing method of this embodiment, utilizing a slurry containing GeO 2 raw material powder of hexagonal means effective.
- FIG. 13 is a graph showing the relationship between the heating temperature of the granulated powder and the shrinkage rate of the sintered body.
- the TMA result (shrinkage rate) when the granulated powder was heated differed depending on the type of crystal of the GeO 2 raw material powder among the raw material powders.
- the shrinkage rate is higher than when a mixed powder of hexagonal germanium oxide and tetragonal germanium oxide is used. ..
- the intensity ratio (tetragonal / tetragonal) between the main peak of the hexagonal crystal and the main peak of the tetragonal crystal is larger than 0.15. The one is used (hereinafter, the same). That is, it was found that when only hexagonal germanium oxide was used as the raw material powder for germanium oxide, the shrinkage rate was higher and the sinterability was improved.
- FIG. 14 (a) and 14 (b) are graphs showing the particle size distribution of the primary particles after wet pulverization.
- FIG. 14 (a) shows the results when a mixed powder of hexagonal germanium oxide and tetragonal germanium oxide was used as the raw material powder of germanium oxide in the raw material powder
- FIG. 14 (b) shows the results. Shows the results when only hexagonal germanium oxide) was used as the raw material powder for germanium oxide in the raw material powder.
- hexagonal crystals are used as the raw material powder for germanium oxide, as compared with the case where a mixed powder of hexagonal germanium oxide and tetragonal germanium oxide is used as the raw material powder.
- the particle size is smaller and the pulverizability is improved.
- FIGS. 15 (a) and 15 (b) are electron microscope images of the polished surface of the sintered body.
- FIG. 15 (a) shows the results when a mixed powder of hexagonal germanium oxide and tetragonal germanium oxide was used as the raw material powder of germanium oxide among the raw material powders
- FIG. 15 (b) shows the results. Shows the results when only hexagonal germanium oxide) was used as the raw material powder for germanium oxide in the raw material powder.
- the firing conditions in FIGS. 15 (a) and 15 (b) are the same.
- a raw material powder for germanium oxide As shown in FIGS. 15A and 15B, as a raw material powder for germanium oxide, a mixed powder of hexagonal germanium oxide and square germanium oxide is used as the raw material powder (FIG. 15). When only (a)) and hexagonal germanium oxide) are used, the particle size is smaller, and a sintered body having high dispersibility of the raw material powder can be obtained (FIG. 15 (b)).
- FIG. 16 is a schematic cross-sectional view showing the configuration of a thin film transistor in which the target according to the present embodiment is used.
- a so-called bottom gate type field effect transistor will be described as an example.
- the thin film transistor 100 of the present embodiment has a gate electrode 11, a gate insulating film 12, an active layer 13, a source electrode 14S, and a drain electrode 14D.
- the gate electrode 11 is made of a conductive film formed on the surface of the base material 10.
- the base material 10 is typically a transparent glass substrate.
- the gate electrode 11 is typically composed of a metal single layer film or a metal multilayer film such as molybdenum (Mo), titanium (Ti), aluminum (Al), copper (Cu), and is formed by, for example, a sputtering method. .. In this embodiment, the gate electrode 11 is made of molybdenum.
- the thickness of the gate electrode 11 is not particularly limited, and is, for example, 200 nm.
- the gate electrode 11 is formed by, for example, a sputtering method, a vacuum vapor deposition method, or the like.
- the active layer 13 functions as a channel layer of the thin film transistor 100.
- the film thickness of the active layer 13 is, for example, 10 nm to 200 nm.
- the active layer 13 is composed of an In—Sn—Ge—O oxide semiconductor thin film containing In (indium), Sn (tin) and Ge (germanium).
- the active layer 13 is formed by, for example, a sputtering method. The specific composition of the oxide semiconductor thin film will be described later.
- the gate insulating film 12 is formed between the gate electrode 11 and the active layer 13.
- the gate insulating film 12 is composed of, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a laminated film thereof.
- the film forming method is not particularly limited, and may be a CVD method, a sputtering method, a vapor deposition method, or the like.
- the film thickness of the gate insulating film 12 is not particularly limited, and is, for example, 200 nm to 400 nm.
- the source electrode 14S and the drain electrode 14D are formed on the active layer 13 so as to be separated from each other.
- the source electrode 14S and the drain electrode 14D can be made of, for example, a metal single-layer film such as aluminum, molybdenum, copper, or titanium, or a multilayer film of these metals. As will be described later, the source electrode 14S and the drain electrode 14D can be formed at the same time by patterning the metal film.
- the thickness of the metal film is, for example, 100 nm to 200 nm.
- the source electrode 14S and the drain electrode 14D are formed by, for example, a sputtering method, a vacuum vapor deposition method, or the like.
- the source electrode 14S and the drain electrode 14D are covered with the protective film 15.
- the protective film 15 is made of an electrically insulating material such as a silicon oxide film, a silicon nitride film, or a laminated film thereof.
- the protective film 15 is for shielding the element portion including the active layer 13 from the outside air.
- the film thickness of the protective film 15 is not particularly limited, and is, for example, 100 nm to 300 nm.
- the protective film 15 is formed by, for example, a CVD method.
- Annealing conditions are not particularly limited, and in this embodiment, it is carried out in the air at about 300 ° C. for 1 hour.
- the protective film 15 is provided with interlayer connection holes for connecting the source / drain electrodes 14S and 14D to the wiring layer (not shown) at appropriate positions.
- the wiring layer is for connecting the thin film transistor 100 to a peripheral circuit (not shown), and is made of a transparent conductive film such as ITO.
- the mobility and carrier concentration were measured with a Hall effect measuring instrument after annealing the oxide semiconductor thin film immediately after film formation at 350 ° C. for 1 hour in the atmosphere.
- the X-ray diffraction pattern of the thin film is measured using an X-ray diffraction measuring device, and if a significant peak is observed, it is evaluated as crystalline, and a broad pattern (halo pattern) without a significant peak is used. In some cases, it was evaluated as amorphous.
- the film forming conditions were a substrate temperature of 100 ° C., a sputter gas of a mixed gas of argon and oxygen (oxygen content ratio of 7%), and a film thickness of 50 nm.
- Example No. 2-1 Using the In—Sn—O target, the atomic ratios of each element in the total amount of In and Sn are 94.7 atomic% In: 94.7 atomic% and Sn: 5.3 atomic%, respectively, on the glass substrate.
- a Sn—O-based oxide semiconductor thin film was produced.
- the obtained thin film was crystalline.
- the mobility was 31.0 cm 2 / Vs and the carrier concentration was 6.4 E + 20 (6.4 ⁇ 10 20 ) / cm 3 .
- Example No. 2-2 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 90.2 atomic% and Sn: 4.9 atomic%, respectively.
- Ge An In—Sn—Ge—O-based oxide semiconductor thin film having a content of 4.9 atomic% was prepared. The obtained thin film was crystalline.
- the mobility was 36.5 cm 2 / Vs and the carrier concentration was 1.6 E + 20 (1.6 ⁇ 10 20 ) / cm 3 .
- Example No. 2-3 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 88.5 atomic% and Sn: 4.5 atomic%, respectively.
- Ge An In—Sn—Ge—O-based oxide semiconductor thin film having 7 atomic% was prepared. The obtained thin film was amorphous.
- the mobility was 33.2 cm 2 / Vs and the carrier concentration was 9.8E + 18 (9.8 ⁇ 10 18 ) / cm 3 .
- Example No. 2-4 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 83.5 atomic% and Sn: 4.3 atomic%, respectively. , Ge: 12.2 atomic%, In—Sn—Ge—O based oxide semiconductor thin film was prepared. The obtained thin film was amorphous. As a result of evaluating the electrical characteristics of the produced oxide semiconductor thin film, the mobility was 31.7 cm 2 / Vs and the carrier concentration was 7.4E + 18 (7.4 ⁇ 10 18 ) / cm 3 .
- Example No. 2-5 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 77.1 atomic% and Sn: 4.2 atomic%, respectively. , Ge: 18.7 atomic%, In—Sn—Ge—O-based oxide semiconductor thin film was prepared. The obtained thin film was amorphous. As a result of evaluating the electrical characteristics of the produced oxide semiconductor thin film, the mobility was 24.5 cm 2 / Vs and the carrier concentration was 8.9E + 18 (8.9 ⁇ 10 18 ) / cm 3 .
- Example No. 2-6 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 71.9 atomic%, Sn: 4 atomic% and Ge, respectively. : An In—Sn—Ge—O-based oxide semiconductor thin film having a content of 24.1 atomic% was prepared. The obtained thin film was amorphous. As a result of evaluating the electrical characteristics of the produced oxide semiconductor thin film, the mobility was 17.1 cm 2 / Vs and the carrier concentration was 9.5E + 17 (9.5 ⁇ 10 17 ) / cm 3 .
- Example No. 2--7 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 55.5 atomic% and Sn: 4.5 atomic%, respectively. , Ge: 40 atomic%, In—Sn—Ge—O-based oxide semiconductor thin film was prepared. The obtained thin film was amorphous. As a result of evaluating the electrical characteristics of the produced oxide semiconductor thin film, the mobility was 10.2 cm 2 / Vs and the carrier concentration was 4.5E + 16 (4.5 ⁇ 10 16 ) / cm 3 .
- Example No. 3-1 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 88 atomic%, Sn: 7 atomic%, Ge: 5 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced.
- the obtained thin film was amorphous.
- the mobility was 31.5 cm 2 / Vs and the carrier concentration was 2.9 E + 20 (2.9 ⁇ 10 20 ) / cm 3 .
- Example No. 3-2 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 86 atomic%, Sn: 7 atomic%, Ge: 7 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous.
- the mobility was 30.2 cm 2 / Vs and the carrier concentration was 1.0 E + 19 (1.0 ⁇ 10 19 ) / cm 3 .
- Example No. 3-3 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 80 atomic%, Sn: 7 atomic%, Ge: 13 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous.
- the mobility was 27.1 cm 2 / Vs and the carrier concentration was 7.3 E + 18 (7.3 ⁇ 10 18 ) / cm 3 .
- Example No. 3-4 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 53 atomic%, Sn: 7 atomic%, Ge: 40, respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced.
- the obtained thin film was amorphous.
- the mobility was 11.0 cm 2 / Vs and the carrier concentration was 8.1 E + 16 (8.1 ⁇ 10 16 ) / cm 3 .
- Example No. 4-1 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 77.1 atomic%, Sn: 18 atomic% and Ge, respectively. : An In—Sn—Ge—O-based oxide semiconductor thin film having a content of 4.9 atomic% was prepared. The obtained thin film was amorphous. As a result of evaluating the electrical characteristics of the produced oxide semiconductor thin film, the mobility was 31.5 cm 2 / Vs and the carrier concentration was 5.2 E + 20 (5.2 ⁇ 10 20 ) / cm 3 .
- Example No. 4-2 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 75 atomic%, Sn: 18 atomic%, Ge: 7 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced.
- the obtained thin film was amorphous.
- the mobility was 32.0 cm 2 / Vs and the carrier concentration was 3.1 E + 19 (3.1 ⁇ 10 19 ) / cm 3 .
- Example No. 4-3 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 71.4 atomic%, Sn: 18 atomic%, Ge, respectively.
- An In—Sn—Ge—O oxide semiconductor thin film containing 10.6 atomic% was prepared. The obtained thin film was amorphous.
- the mobility was 31.6 cm 2 / Vs and the carrier concentration was 1.7 E + 19 (1.7 ⁇ 10 19 ) / cm 3 .
- Example No. 4-4 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 42 atomic%, Sn: 18 atomic%, Ge: 40, respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced.
- the obtained thin film was amorphous.
- the mobility was 10.5 cm 2 / Vs and the carrier concentration was 6.6E + 11 (6.6 ⁇ 10 11 ) / cm 3 .
- Example No. 5-1 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 67 atomic%, Sn: 30 atomic%, Ge: 3 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced.
- the obtained thin film was amorphous.
- the mobility was 30.2 cm 2 / Vs and the carrier concentration was 5.6 E + 20 (5.6 ⁇ 10 20 ) / cm 3 .
- Example No. 5-2 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 63 atomic%, Sn: 30 atomic%, Ge: 7 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous.
- the mobility was 32.8 cm 2 / Vs and the carrier concentration was 3.3 E + 19 (3.3 ⁇ 10 19 ) / cm 3 .
- Example No. 5-3 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 60 atomic%, Sn: 30 atomic%, Ge: 10 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous.
- the mobility was 30.0 cm 2 / Vs and the carrier concentration was 1.5 E + 19 (1.5 ⁇ 10 19 ) / cm 3 .
- Example No. 5-4 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 30 atomic%, Sn: 30 atomic%, Ge: 40, respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous.
- the mobility was 11.5 cm 2 / Vs and the carrier concentration was 7.7E + 16 (7.7 ⁇ 10 16 ) / cm 3 .
- Example No. 6-1 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 36 atomic%, Sn: 60 atomic%, Ge: 4 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced.
- the obtained thin film was amorphous.
- the mobility was 25.2 cm 2 / Vs and the carrier concentration was 6.0 E + 20 (6.0 ⁇ 10 20 ) / cm 3 .
- Example No. 6-2 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 33 atomic%, Sn: 60 atomic%, Ge: 7 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous.
- the mobility was 18.2 cm 2 / Vs and the carrier concentration was 2.2 E + 19 (2.2 ⁇ 10 19 ) / cm 3 .
- Example No. 6-3 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 31 atomic%, Sn: 60 atomic%, Ge: 9 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced.
- the obtained thin film was amorphous.
- the mobility was 11.3 cm 2 / Vs and the carrier concentration was 1.6 E + 19 (1.6 ⁇ 10 19 ) / cm 3 .
- Example No. 6-4 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 2 atomic%, Sn: 58 atomic%, Ge: 40, respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous. Results of evaluation of the electric characteristics of the oxide semiconductor thin film prepared, mobility 3.5 cm 2 / Vs, the carrier concentration was 7.3E + 16 (7.3 ⁇ 10 16 ) / cm 3.
- Example 7-1 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 91 atomic%, Sn: 2 atomic%, Ge: 7 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced.
- the obtained thin film was crystalline.
- the mobility was 35.2 cm 2 / Vs and the carrier concentration was 8.9E + 19 (8.9 ⁇ 10 19 ) / cm 3 .
- Example 7-2 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 89 atomic%, Sn: 4 atomic%, Ge: 7 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous.
- the mobility was 33.2 cm 2 / Vs and the carrier concentration was 9.8E + 18 (9.8 ⁇ 10 18 ) / cm 3 .
- Example 7-3 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 86 atomic%, Sn: 7 atomic%, Ge: 7 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous.
- the mobility was 30.2 cm 2 / Vs and the carrier concentration was 1.0 E + 19 (1.0 ⁇ 10 19 ) / cm 3 .
- Example 7-4 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 73 atomic%, Sn: 20 atomic%, Ge: 7 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced.
- the obtained thin film was amorphous.
- the mobility was 32.0 cm 2 / Vs and the carrier concentration was 3.1 E + 19 (3.1 ⁇ 10 19 ) / cm 3 .
- Example 7-5 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 63 atomic%, Sn: 30 atomic%, Ge: 7 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous.
- the mobility was 30.8 cm 2 / Vs and the carrier concentration was 3.3E + 19 (3.3 ⁇ 10 19 ) / cm 3 .
- Example 7-6 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 33 atomic%, Sn: 60 atomic%, Ge: 7 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous.
- the mobility was 18.2 cm 2 / Vs and the carrier concentration was 2.2 E + 19 (2.2 ⁇ 10 19 ) / cm 3 .
- Example No. 8-1 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 58 atomic%, Sn: 2 atomic%, Ge: 40, respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced.
- the obtained thin film was amorphous.
- the mobility was 8.2 cm 2 / Vs and the carrier concentration was 3.8E + 16 (3.8 ⁇ 10 16 ) / cm 3 .
- Example No. 8-2 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 56 atomic%, Sn: 4 atomic%, Ge: 40, respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous.
- the mobility was 10.2 cm 2 / Vs and the carrier concentration was 4.5E + 16 (4.5 ⁇ 10 16 ) / cm 3 .
- Example No. 8-3 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 53 atomic%, Sn: 7 atomic%, Ge: 40, respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous.
- the mobility was 11.0 cm 2 / Vs and the carrier concentration was 8.1 E + 16 (8.1 ⁇ 10 16 ) / cm 3 .
- Example No. 8-4 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 40 atomic%, Sn: 20 atomic%, Ge: 40, respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous.
- the mobility was 10.5 cm 2 / Vs and the carrier concentration was 6.6 E + 16 (6.6 ⁇ 10 16 ) / cm 3 .
- Example No. 8-5 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 30 atomic%, Sn: 30 atomic%, Ge: 40, respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced. The obtained thin film was amorphous.
- the mobility was 11.5 cm 2 / Vs and the carrier concentration was 7.7E + 16 (7.7 ⁇ 10 16 ) / cm 3 .
- Example No. 8-6 Using the Sn-Ge-O target, the atomic ratio of each element in the total amount of Sn and Ge is Sn: 60 atomic% and Ge: 40 atomic%, respectively, on the glass substrate.
- An oxide semiconductor thin film was prepared. The obtained thin film was amorphous. Results of evaluation of the electric characteristics of the oxide semiconductor thin film prepared, mobility 3.5 cm 2 / Vs, the carrier concentration was 7.3E + 16 (7.3 ⁇ 10 16 ) / cm 3.
- Example 9-1 Using a target in which Ti is added as the first element ( ⁇ ) to an In—Sn—Ge—O material, the atomic ratio of each element to the total amount of In, Sn, Ge and Ti is calculated on the glass substrate.
- In—Sn—Ge—Ti—O-based oxide semiconductor thin films having In: 80 atomic%, Sn: 7 atomic%, Ge: 10 atomic%, and Ti: 3 atomic% were prepared, respectively.
- the obtained thin film was amorphous.
- the mobility was 21.8 cm 2 / Vs and the carrier concentration was 2.3 E + 18 (2.3 ⁇ 10 18 ) / cm 3 .
- Example 9-2 Using a target in which Ti is added as the first element ( ⁇ ) to the In—Sn—Ge—O material, the atomic ratio of each element to the total amount of In, Sn, Ge and Ti is calculated on the glass substrate.
- In—Sn—Ge—Ti—O-based oxide semiconductor thin films having In: 79 atomic%, Sn: 7 atomic%, Ge: 10 atomic%, and Ti: 4 atomic%, respectively, were produced.
- the obtained thin film was amorphous.
- the mobility was 18.8 cm 2 / Vs and the carrier concentration was 1.9 E + 18 (1.9 ⁇ 10 18 ) / cm 3 .
- Example 9-3 Using a target in which Ti is added as the first element ( ⁇ ) to the In—Sn—Ge—O material, the atomic ratio of each element to the total amount of In, Sn, Ge and Ti is calculated on the glass substrate.
- In—Sn—Ge—Ti—O-based oxide semiconductor thin films having In: 76 atomic%, Sn: 7 atomic%, Ge: 10 atomic%, and Ti: 7 atomic%, respectively, were produced.
- the obtained thin film was amorphous.
- the mobility was 15.0 cm 2 / Vs and the carrier concentration was 7.9 E + 17 (7.9 ⁇ 10 17 ) / cm 3 .
- Example 9-4 Using a target in which Ti is added as the first element ( ⁇ ) to the In—Sn—Ge—O material, the atomic ratio of each element to the total amount of In, Sn, Ge and Ti is calculated on the glass substrate.
- In—Sn—Ge—Ti—O-based oxide semiconductor thin films having In: 71 atomic%, Sn: 7 atomic%, Ge: 10 atomic%, and Ti: 12 atomic%, respectively, were produced.
- the obtained thin film was amorphous.
- the mobility was 6.5 cm 2 / Vs and the carrier concentration was 1.2 E + 17 (1.2 ⁇ 10 17 ) / cm 3 .
- Example 9-5 Using a target in which Ca is added as the first element ( ⁇ ) to the In—Sn—Ge—O material, the atomic ratio of each element to the total amount of In, Sn, Ge and Ti is calculated on the glass substrate.
- In—Sn—Ge—Ca—O-based oxide semiconductor thin films having In: 82 atomic%, Sn: 7 atomic%, Ge: 10 atomic%, and Ca: 1 atomic% were prepared, respectively.
- the obtained thin film was amorphous.
- the mobility was 25.9 cm 2 / Vs and the carrier concentration was 9.0 E + 18 (9.0 ⁇ 10 18 ) / cm 3 .
- Example 9-6 Using a target in which Ca is added as the first element ( ⁇ ) to an In—Sn—Ge—O material, the atomic ratio of each element to the total amount of In, Sn, Ge and Ti is calculated on the glass substrate.
- In—Sn—Ge—Ca—O-based oxide semiconductor thin films having In: 80 atomic%, Sn: 7 atomic%, Ge: 10 atomic%, and Ca: 3 atomic% were prepared, respectively.
- the obtained thin film was amorphous.
- the mobility was 20.5 cm 2 / Vs and the carrier concentration was 3.4 E + 18 (3.4 ⁇ 10 18 ) / cm 3 .
- Example 9-7 Using a target in which Ca is added as the first element ( ⁇ ) to the In—Sn—Ge—O material, the atomic ratio of each element to the total amount of In, Sn, Ge and Ti is calculated on the glass substrate.
- In—Sn—Ge—Ca—O-based oxide semiconductor thin films having In: 78 atomic%, Sn: 7 atomic%, Ge: 10 atomic%, and Ca: 5 atomic% were prepared, respectively.
- the obtained thin film was amorphous.
- the mobility was 18.9 cm 2 / Vs and the carrier concentration was 1.9 E + 18 (1.9 ⁇ 10 18 ) / cm 3 .
- Example 9-8 Using a target in which Ca is added as the first element ( ⁇ ) to the In—Sn—Ge—O material, the atomic ratio of each element to the total amount of In, Sn, Ge and Ti is calculated on the glass substrate.
- In—Sn—Ge—Ca—O-based oxide semiconductor thin films having In: 71 atomic%, Sn: 7 atomic%, Ge: 10 atomic%, and Ca: 12 atomic% were prepared, respectively.
- the obtained thin film was amorphous.
- the mobility was 8.9 cm 2 / Vs and the carrier concentration was 6.1 E + 17 (6.1 ⁇ 10 17 ) / cm 3 .
- Example 9-9 Using a target in which Ga is added as a second element ( ⁇ ) to an In—Sn—Ge—O material, the atomic ratio of each element to the total amount of In, Sn, Ge and Ti is calculated on the glass substrate.
- In—Sn—Ge—Ga—O-based oxide semiconductor thin films having In: 79.5 atomic%, Sn: 7 atomic%, Ge: 10 atomic%, and Ga: 3.5 atomic% were prepared, respectively.
- the obtained thin film was amorphous.
- the mobility was 26.6 cm 2 / Vs and the carrier concentration was 7.2 E + 18 (7.2 ⁇ 10 18 ) / cm 3 .
- Example 9-10 Using a target in which Ga is added as a second element ( ⁇ ) to an In—Sn—Ge—O material, the atomic ratio of each element to the total amount of In, Sn, Ge and Ti is calculated on the glass substrate.
- In—Sn—Ge—Ga—O-based oxide semiconductor thin films having In: 75.6 atomic%, Sn: 7 atomic%, Ge: 10 atomic%, and Ga: 7.4 atomic%, respectively, were produced.
- the obtained thin film was amorphous.
- the mobility was 22.4 cm 2 / Vs and the carrier concentration was 3.6E + 18 (3.6 ⁇ 10 18 ) / cm 3 .
- Example 9-11 Using a target in which Ga is added as a second element ( ⁇ ) to an In—Sn—Ge—O material, the atomic ratio of each element to the total amount of In, Sn, Ge and Ti is calculated on the glass substrate.
- In—Sn—Ge—Ga—O-based oxide semiconductor thin films having In: 69.7 atomic%, Sn: 7 atomic%, Ge: 10 atomic%, and Ga: 13.3 atomic%, respectively, were produced. The obtained thin film was amorphous.
- the mobility was 17.6 cm 2 / Vs and the carrier concentration was 2.4E + 18 (2.4 ⁇ 10 18 ) / cm 3 .
- Example 9-12 Using a target in which Ga is added as the second element ( ⁇ ) to the In—Sn—Ge—O material, the atomic ratio of each element to the total amount of In, Sn, Ge and Ti is calculated on the glass substrate.
- In—Sn—Ge—Ga—O-based oxide semiconductor thin films having In: 59 atomic%, Sn: 7 atomic%, Ge: 10 atomic%, and Ga: 24 atomic%, respectively, were produced.
- the obtained thin film was amorphous.
- the mobility was 10.2 cm 2 / Vs and the carrier concentration was 1.0 E + 18 (1.0 ⁇ 10 18 ) / cm 3 .
- the mobility tends to increase as the In content increases, and the carrier concentration tends to decrease as the Ge content increases.
- the carrier concentration in the membrane can be suppressed to 10 19 / cm 3 orders or less.
- a high mobility of about 20 to 35 cm 2 / Vs can be obtained.
- by suppressing the Ge content to 40 atomic% or less it becomes easy to obtain a mobility of 10 cm 2 / Vs or more.
- the higher the Sn content the easier it is to obtain an amorphous thin film.
- the Sn content is preferably optimized according to the Ge content, and the Sn content should be 60 atomic% or less in order to secure a mobility of 10 cm 2 / Vs or more. preferable.
- the carrier concentration decreases as the content of the first element ( ⁇ ) or the second element ( ⁇ ) increases, even in the In—Sn—Ge-based oxide semiconductor. It was confirmed that it functions as a carrier killer. Since the mobility is also reduced by the addition of the first element ( ⁇ ) or the second element ( ⁇ ), in order to secure the mobility of 10 cm 2 / Vs or more, the mobility of the first element ( ⁇ ) is reduced.
- the content is preferably 10 atomic% or less, and the content of the second element ( ⁇ ) is preferably 25 atomic% or less.
- the minimum content of the first element ( ⁇ ) or the second element ( ⁇ ) is not particularly limited as long as the effect as a carrier killer can be confirmed, and may be 1 atomic% or less.
- Example No. 10-1 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 83 atomic%, Sn: 10 atomic%, Ge: 7 respectively.
- An atomic% In—Sn—Ge—O-based oxide semiconductor thin film was prepared by a sputtering method.
- a thin film transistor having the structure shown in FIG. 16 was prepared using the prepared oxide semiconductor thin film as an active layer, and the transistor characteristics (mobility, threshold voltage (Vth), PBTS ( ⁇ Vth), NBTS ( ⁇ Vth)) of each were evaluated.
- PBTS was defined as the amount of change in the threshold voltage after applying a gate voltage of + 30 V for 60 minutes at a temperature of 60 ° C.
- NBTS was defined as the amount of change in the threshold voltage after applying a gate voltage of ⁇ 30 V for 60 minutes at a temperature of 60 ° C.
- the film forming conditions were a substrate temperature of 100 ° C., a sputter gas of a mixed gas of argon and oxygen (oxygen content ratio of 7%), and a film thickness of 50 nm.
- the mobility was 44.3 cm 2 / Vs
- the threshold voltage (Vth) was 3.6 V
- the PBTS (Vth) was + 0.6 V
- the NBTS (Vth) was -1.0 V.
- Example No. 10-2 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 73 atomic%, Sn: 20 atomic%, Ge: 7 respectively.
- An In—Sn—Ge—O-based oxide semiconductor thin film having an atomic% was produced by a sputtering method.
- a thin film transistor having the structure shown in FIG. 16 was prepared using the prepared oxide semiconductor thin film as an active layer, and the transistor characteristics (mobility, threshold voltage (Vth), PBTS ( ⁇ Vth), NBTS ( ⁇ Vth)) of each were evaluated. As a result of the evaluation, the mobility was 40.2 cm 2 / Vs, the threshold voltage (Vth) was 3.5 V, the PBTS (Vth) was + 0.6 V, and the NBTS (Vth) was ⁇ 1.4 V.
- Example No. 10-3 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 75 atomic%, Sn: 10 atomic%, Ge: 15 respectively.
- An atomic% In—Sn—Ge—O-based oxide semiconductor thin film was prepared by a sputtering method.
- a thin film transistor having the structure shown in FIG. 16 was prepared using the prepared oxide semiconductor thin film as an active layer, and the transistor characteristics (mobility, threshold voltage (Vth), PBTS ( ⁇ Vth), NBTS ( ⁇ Vth)) of each were evaluated. As a result of the evaluation, the mobility was 37.2 cm 2 / Vs, the threshold voltage (Vth) was 3.8 V, the PBTS (Vth) was + 0.7 V, and the NBTS (Vth) was -0.9 V.
- Example No. 10-4 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 65 atomic%, Sn: 20 atomic%, Ge: 15 respectively.
- An atomic% In—Sn—Ge—O-based oxide semiconductor thin film was prepared by a sputtering method.
- a thin film transistor having the structure shown in FIG. 16 was prepared using the prepared oxide semiconductor thin film as an active layer, and the transistor characteristics (mobility, threshold voltage (Vth), PBTS ( ⁇ Vth), NBTS ( ⁇ Vth)) of each were evaluated. As a result of the evaluation, the mobility was 31.2 cm 2 / Vs, the threshold voltage (Vth) was 4.0 V, the PBTS (Vth) was + 0.6 V, and the NBTS (Vth) was -1.0 V.
- Example No. 10-5 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 70 atomic%, Sn: 10 atomic%, Ge: 20 respectively.
- An atomic% In—Sn—Ge—O-based oxide semiconductor thin film was prepared by a sputtering method.
- a thin film transistor having the structure shown in FIG. 16 was prepared using the prepared oxide semiconductor thin film as an active layer, and the transistor characteristics (mobility, threshold voltage (Vth), PBTS ( ⁇ Vth), NBTS ( ⁇ Vth)) of each were evaluated. As a result of the evaluation, the mobility was 20.1 cm 2 / Vs, the threshold voltage (Vth) was 4.1 V, the PBTS (Vth) was + 1.0 V, and the NBTS (Vth) was -0.7 V.
- Example No. 10-6 Using the In—Sn—Ge—O target, the atomic ratios of each element in the total amount of In, Sn and Ge on the glass substrate are In: 60 atomic%, Sn: 20 atomic%, Ge: 20 respectively.
- An atomic% In—Sn—Ge—O-based oxide semiconductor thin film was prepared by a sputtering method.
- a thin film transistor having the structure shown in FIG. 16 was prepared using the prepared oxide semiconductor thin film as an active layer, and the transistor characteristics (mobility, threshold voltage (Vth), PBTS ( ⁇ Vth), NBTS ( ⁇ Vth)) of each were evaluated. As a result of the evaluation, the mobility was 19.8 cm 2 / Vs, the threshold voltage (Vth) was 4.2 V, the PBTS (Vth) was + 0.9 V, and the NBTS (Vth) was -0.6 V.
- the so-called bottom gate type (reverse stagger type) transistor has been described as an example, but the present invention can also be applied to a top gate type (stagger type) thin film transistor.
- the above-mentioned thin film transistor can be used as a TFT for an active matrix type display panel such as a liquid crystal display or an organic EL display.
- the above-mentioned transistor can be used as a transistor element of various semiconductor devices or electronic devices.
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Abstract
Description
これにより、10cm2/Vs以上の移動度を有するトランジスタ特性を得ることができる。
Ge/(In+Sn+Ge)の原子比を0.07以上とすることで、Snの含有量に依存することなく、アモルファスの酸化物半導体薄膜を得ることができる。
Sn/(In+Sn+Ge)の原子比を0.04以上とすることで、キャリア濃度が5×1019以下の酸化物半導体薄膜を得ることができる。
Sn/(In+Sn+Ge)の原子比を0.60以下とすることで、Geの含有量に依存することなく、移動度10以上の酸化物半導体薄膜を得ることができる。
これにより、Snの含有量に依存することなく、アモルファスの酸化物半導体薄膜を得ることができる。
走査方法:2θ/θ法
ターゲット:Cu
管電圧:40kV
管電流:20mA
スキャンスピード:2.000°/分
サンプリング幅:0.050°
発散スリット:1°
散乱スリット:1°
受光スリット:0.3mm
In-Sn-Oターゲットを用いて、ガラス基板上に、In及びSnの合計量に占める各元素の原子比がそれぞれ、In:94.7原子%、Sn:5.3原子%であるIn-Sn-O系酸化物半導体薄膜を作製した。得られた薄膜は、結晶質であった。作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は31.0cm2/Vs、キャリア濃度は6.4E+20(6.4×1020)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:90.2原子%、Sn:4.9原子%、Ge:4.9原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、結晶質であった。作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は36.5cm2/Vs、キャリア濃度は1.6E+20(1.6×1020)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:88.5原子%、Sn:4.5原子%、Ge:7原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は33.2cm2/Vs、キャリア濃度は9.8E+18(9.8×1018)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:83.5原子%、Sn:4.3原子%、Ge:12.2原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は31.7cm2/Vs、キャリア濃度は7.4E+18(7.4×1018)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:77.1原子%、Sn:4.2原子%、Ge:18.7原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は24.5cm2/Vs、キャリア濃度は8.9E+18(8.9×1018)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:71.9原子%、Sn:4原子%、Ge:24.1原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は17.1cm2/Vs、キャリア濃度は9.5E+17(9.5×1017)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:55.5原子%、Sn:4.5原子%、Ge:40原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は10.2cm2/Vs、キャリア濃度は4.5E+16(4.5×1016)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:88原子%、Sn:7原子%、Ge:5原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は31.5cm2/Vs、キャリア濃度は2.9E+20(2.9×1020)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:86原子%、Sn:7原子%、Ge:7原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は30.2cm2/Vs、キャリア濃度は1.0E+19(1.0×1019)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:80原子%、Sn:7原子%、Ge:13原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は27.1cm2/Vs、キャリア濃度は7.3E+18(7.3×1018)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:53原子%、Sn:7原子%、Ge:40原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は11.0cm2/Vs、キャリア濃度は8.1E+16(8.1×1016)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:77.1原子%、Sn:18原子%、Ge:4.9原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は31.5cm2/Vs、キャリア濃度は5.2E+20(5.2×1020)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:75原子%、Sn:18原子%、Ge:7原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は32.0cm2/Vs、キャリア濃度は3.1E+19(3.1×1019)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:71.4原子%、Sn:18原子%、Ge:10.6原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は31.6cm2/Vs、キャリア濃度は1.7E+19(1.7×1019)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:42原子%、Sn:18原子%、Ge:40原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は10.5cm2/Vs、キャリア濃度は6.6E+11(6.6×1011)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:67原子%、Sn:30原子%、Ge:3原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は30.2cm2/Vs、キャリア濃度は5.6E+20(5.6×1020)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:63原子%、Sn:30原子%、Ge:7原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は32.8cm2/Vs、キャリア濃度は3.3E+19(3.3×1019)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:60原子%、Sn:30原子%、Ge:10原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は30.0cm2/Vs、キャリア濃度は1.5E+19(1.5×1019)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:30原子%、Sn:30原子%、Ge:40原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は11.5cm2/Vs、キャリア濃度は7.7E+16(7.7×1016)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:36原子%、Sn:60原子%、Ge:4原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は25.2cm2/Vs、キャリア濃度は6.0E+20(6.0×1020)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:33原子%、Sn:60原子%、Ge:7原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は18.2cm2/Vs、キャリア濃度は2.2E+19(2.2×1019)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:31原子%、Sn:60原子%、Ge:9原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は11.3cm2/Vs、キャリア濃度は1.6E+19(1.6×1019)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:2原子%、Sn:58原子%、Ge:40原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度3.5cm2/Vs、キャリア濃度は7.3E+16(7.3×1016)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:91原子%、Sn:2原子%、Ge:7原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、結晶質であった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は35.2cm2/Vs、キャリア濃度は8.9E+19(8.9×1019)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:89原子%、Sn:4原子%、Ge:7原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度33.2cm2/Vs、キャリア濃度は9.8E+18(9.8×1018)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:86原子%、Sn:7原子%、Ge:7原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度30.2cm2/Vs、キャリア濃度は1.0E+19(1.0×1019)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:73原子%、Sn:20原子%、Ge:7原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度32.0cm2/Vs、キャリア濃度は3.1E+19(3.1×1019)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:63原子%、Sn:30原子%、Ge:7原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度30.8cm2/Vs、キャリア濃度は3.3E+19(3.3×1019)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:33原子%、Sn:60原子%、Ge:7原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度18.2cm2/Vs、キャリア濃度は2.2E+19(2.2×1019)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:58原子%、Sn:2原子%、Ge:40原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は8.2cm2/Vs、キャリア濃度は3.8E+16(3.8×1016)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:56原子%、Sn:4原子%、Ge:40原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度10.2cm2/Vs、キャリア濃度は4.5E+16(4.5×1016)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:53原子%、Sn:7原子%、Ge:40原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度11.0cm2/Vs、キャリア濃度は8.1E+16(8.1×1016)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:40原子%、Sn:20原子%、Ge:40原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度10.5cm2/Vs、キャリア濃度は6.6E+16(6.6×1016)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:30原子%、Sn:30原子%、Ge:40原子%であるIn-Sn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度11.5cm2/Vs、キャリア濃度は7.7E+16(7.7×1016)/cm3であった。
Sn-Ge-Oターゲットを用いて、ガラス基板上に、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、Sn:60原子%、Ge:40原子%であるSn-Ge-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度3.5cm2/Vs、キャリア濃度は7.3E+16(7.3×1016)/cm3であった。
In-Sn-Ge-O系材料に第1の元素(α)としてTiを添加したターゲットを用いて、ガラス基板上に、In、Sn、Ge及びTiの合計量に占める各元素の原子比がそれぞれ、In:80原子%、Sn:7原子%、Ge:10原子%、Ti:3原子%であるIn-Sn-Ge-Ti-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は21.8cm2/Vs、キャリア濃度は2.3E+18(2.3×1018)/cm3であった。
In-Sn-Ge-O系材料に第1の元素(α)としてTiを添加したターゲットを用いて、ガラス基板上に、In、Sn、Ge及びTiの合計量に占める各元素の原子比がそれぞれ、In:79原子%、Sn:7原子%、Ge:10原子%、Ti:4原子%であるIn-Sn-Ge-Ti-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は18.8cm2/Vs、キャリア濃度は1.9E+18(1.9×1018)/cm3であった。
In-Sn-Ge-O系材料に第1の元素(α)としてTiを添加したターゲットを用いて、ガラス基板上に、In、Sn、Ge及びTiの合計量に占める各元素の原子比がそれぞれ、In:76原子%、Sn:7原子%、Ge:10原子%、Ti:7原子%であるIn-Sn-Ge-Ti-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は15.0cm2/Vs、キャリア濃度は7.9E+17(7.9×1017)/cm3であった。
In-Sn-Ge-O系材料に第1の元素(α)としてTiを添加したターゲットを用いて、ガラス基板上に、In、Sn、Ge及びTiの合計量に占める各元素の原子比がそれぞれ、In:71原子%、Sn:7原子%、Ge:10原子%、Ti:12原子%であるIn-Sn-Ge-Ti-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は6.5cm2/Vs、キャリア濃度は1.2E+17(1.2×1017)/cm3であった。
In-Sn-Ge-O系材料に第1の元素(α)としてCaを添加したターゲットを用いて、ガラス基板上に、In、Sn、Ge及びTiの合計量に占める各元素の原子比がそれぞれ、In:82原子%、Sn:7原子%、Ge:10原子%、Ca:1原子%であるIn-Sn-Ge-Ca-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は25.9cm2/Vs、キャリア濃度は9.0E+18(9.0×1018)/cm3であった。
In-Sn-Ge-O系材料に第1の元素(α)としてCaを添加したターゲットを用いて、ガラス基板上に、In、Sn、Ge及びTiの合計量に占める各元素の原子比がそれぞれ、In:80原子%、Sn:7原子%、Ge:10原子%、Ca:3原子%であるIn-Sn-Ge-Ca-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は20.5cm2/Vs、キャリア濃度は3.4E+18(3.4×1018)/cm3であった。
In-Sn-Ge-O系材料に第1の元素(α)としてCaを添加したターゲットを用いて、ガラス基板上に、In、Sn、Ge及びTiの合計量に占める各元素の原子比がそれぞれ、In:78原子%、Sn:7原子%、Ge:10原子%、Ca:5原子%であるIn-Sn-Ge-Ca-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は18.9cm2/Vs、キャリア濃度は1.9E+18(1.9×1018)/cm3であった。
In-Sn-Ge-O系材料に第1の元素(α)としてCaを添加したターゲットを用いて、ガラス基板上に、In、Sn、Ge及びTiの合計量に占める各元素の原子比がそれぞれ、In:71原子%、Sn:7原子%、Ge:10原子%、Ca:12原子%であるIn-Sn-Ge-Ca-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は8.9cm2/Vs、キャリア濃度は6.1E+17(6.1×1017)/cm3であった。
In-Sn-Ge-O系材料に第2の元素(β)としてGaを添加したターゲットを用いて、ガラス基板上に、In、Sn、Ge及びTiの合計量に占める各元素の原子比がそれぞれ、In:79.5原子%、Sn:7原子%、Ge:10原子%、Ga:3.5原子%であるIn-Sn-Ge-Ga-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は26.6cm2/Vs、キャリア濃度は7.2E+18(7.2×1018)/cm3であった。
In-Sn-Ge-O系材料に第2の元素(β)としてGaを添加したターゲットを用いて、ガラス基板上に、In、Sn、Ge及びTiの合計量に占める各元素の原子比がそれぞれ、In:75.6原子%、Sn:7原子%、Ge:10原子%、Ga:7.4原子%であるIn-Sn-Ge-Ga-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は22.4cm2/Vs、キャリア濃度は3.6E+18(3.6×1018)/cm3であった。
In-Sn-Ge-O系材料に第2の元素(β)としてGaを添加したターゲットを用いて、ガラス基板上に、In、Sn、Ge及びTiの合計量に占める各元素の原子比がそれぞれ、In:69.7原子%、Sn:7原子%、Ge:10原子%、Ga:13.3原子%であるIn-Sn-Ge-Ga-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は17.6cm2/Vs、キャリア濃度は2.4E+18(2.4×1018)/cm3であった。
In-Sn-Ge-O系材料に第2の元素(β)としてGaを添加したターゲットを用いて、ガラス基板上に、In、Sn、Ge及びTiの合計量に占める各元素の原子比がそれぞれ、In:59原子%、Sn:7原子%、Ge:10原子%、Ga:24原子%であるIn-Sn-Ge-Ga-O系酸化物半導体薄膜を作製した。得られた薄膜は、アモルファスであった。
作製した酸化物半導体薄膜の電気特性を評価した結果、移動度は10.2cm2/Vs、キャリア濃度は1.0E+18(1.0×1018)/cm3であった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:83原子%、Sn:10原子%、Ge:7原子%であるIn-Sn-Ge-O系酸化物半導体薄膜をスパッタ法で作製した。作製した酸化物半導体薄膜を活性層として図16に示した構造の薄膜トランジスタを作製し、各々のトランジスタ特性(移動度、閾値電圧(Vth)、PBTS(ΔVth)、NBTS(ΔVth))を評価した。
NBTS(ΔVth)は、60℃の温度下で、-30Vのゲート電圧を60分間印加した後の閾値電圧の変化量とした。
成膜条件としては、基板温度は100℃、スパッタガスはアルゴン及び酸素の混合ガス(酸素含有比率7%)、膜厚は50nmとした。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:73原子%、Sn:20原子%、Ge:7原子%であるIn-Sn-Ge-O系酸化物半導体薄膜をスパッタ法で作製した。作製した酸化物半導体薄膜を活性層として図16に示した構造の薄膜トランジスタを作製し、各々のトランジスタ特性(移動度、閾値電圧(Vth)、PBTS(ΔVth)、NBTS(ΔVth))を評価した。
評価の結果、移動度は40.2cm2/Vs、閾値電圧(Vth)は3.5V、PBTS(Vth)は+0.6V、NBTS(Vth)は-1.4Vであった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:75原子%、Sn:10原子%、Ge:15原子%であるIn-Sn-Ge-O系酸化物半導体薄膜をスパッタ法で作製した。作製した酸化物半導体薄膜を活性層として図16に示した構造の薄膜トランジスタを作製し、各々のトランジスタ特性(移動度、閾値電圧(Vth)、PBTS(ΔVth)、NBTS(ΔVth))を評価した。
評価の結果、移動度は37.2cm2/Vs、閾値電圧(Vth)は3.8V、PBTS(Vth)は+0.7V、NBTS(Vth)は-0.9Vであった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:65原子%、Sn:20原子%、Ge:15原子%であるIn-Sn-Ge-O系酸化物半導体薄膜をスパッタ法で作製した。作製した酸化物半導体薄膜を活性層として図16に示した構造の薄膜トランジスタを作製し、各々のトランジスタ特性(移動度、閾値電圧(Vth)、PBTS(ΔVth)、NBTS(ΔVth))を評価した。
評価の結果、移動度は31.2cm2/Vs、閾値電圧(Vth)は4.0V、PBTS(Vth)は+0.6V、NBTS(Vth)は-1.0Vであった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:70原子%、Sn:10原子%、Ge:20原子%であるIn-Sn-Ge-O系酸化物半導体薄膜をスパッタ法で作製した。作製した酸化物半導体薄膜を活性層として図16に示した構造の薄膜トランジスタを作製し、各々のトランジスタ特性(移動度、閾値電圧(Vth)、PBTS(ΔVth)、NBTS(ΔVth))を評価した。
評価の結果、移動度は20.1cm2/Vs、閾値電圧(Vth)は4.1V、PBTS(Vth)は+1.0V、NBTS(Vth)は-0.7Vであった。
In-Sn-Ge-Oターゲットを用いて、ガラス基板上に、In、Sn及びGeの合計量に占める各元素の原子比がそれぞれ、In:60原子%、Sn:20原子%、Ge:20原子%であるIn-Sn-Ge-O系酸化物半導体薄膜をスパッタ法で作製した。作製した酸化物半導体薄膜を活性層として図16に示した構造の薄膜トランジスタを作製し、各々のトランジスタ特性(移動度、閾値電圧(Vth)、PBTS(ΔVth)、NBTS(ΔVth))を評価した。
評価の結果、移動度は19.8cm2/Vs、閾値電圧(Vth)は4.2V、PBTS(Vth)は+0.9V、NBTS(Vth)は-0.6Vであった。
11…ゲート電極
12…ゲート絶縁膜
13…活性層
14S…ソース電極
14D…ドレイン電極
15…保護膜
100…薄膜トランジスタ
Claims (11)
- インジウム、スズ、及びゲルマニウムを含む酸化物焼結体で構成され、
インジウム、スズ、及びゲルマニウムの総和に対するゲルマニウムの原子比が0.07以上0.40以下であり、
インジウム、スズ、及びゲルマニウムの総和に対するスズの原子比が0.04以上0.60以下である
スパッタリングターゲット。 - 請求項1記載のスパッタリングターゲットであって、
インジウム、スズ、及びゲルマニウムの総和に対するインジウムの原子比が0.3以上であり、インジウム、スズ、及びゲルマニウムの総和に対するゲルマニウムの原子比が0.10以上0.25以下である
スパッタリングターゲット。 - 請求項1または2に記載のスパッタリングターゲットであって、
前記酸化物焼結体は、Si、Ti、Mg、Ca、Ba、Zr、Al、W、Ta、Hf、及びBから選択される少なくとも1つの元素である第1の元素をさらに含有する
スパッタリングターゲット。 - 請求項3に記載のスパッタリングターゲットであって、
インジウム、スズ、ゲルマニウム、及び前記第1の元素の総和に対する前記第1の元素の原子比が0.10以下である
スパッタリングターゲット。 - 請求項1~4のいずれか1つに記載のスパッタリングターゲットであって、
前記酸化物焼結体は、Sr、Ga及びZnから選択される少なくとも1つの元素である第2の元素をさらに含有する
スパッタリングターゲット。 - 請求項5に記載のスパッタリングターゲットであって、
前記第2の元素をβとしたとき、インジウム、スズ、ゲルマニウム、及び前記第2の元素の総和に対する前記第2の元素の原子比が0.25以下である
スパッタリングターゲット。 - 請求項1~6に記載のスパッタリングターゲットであって、
相対密度が97%以上である
スパッタリングターゲット。 - 請求項1~7に記載のスパッタリングターゲットであって、
比抵抗値が0.1mΩ・cm以上10mΩ・cm以下である
スパッタリングターゲット。 - 請求項1~8に記載のスパッタリングターゲットであって、
厚み方向における比抵抗値が前記バルク比抵抗値の平均値に対して0.8以上1.2以下に収まっている
スパッタリングターゲット。 - 請求項1~9のいずれか1つに記載のスパッタリングターゲットであって、
前記酸化物焼結体は、In-O相、In-Sn-O相、及びIn-Ge-O相の少なくとも1つの化合物相を含む
スパッタリングターゲット。 - 酸化インジウム粉末、酸化スズ粉末、及び酸化ゲルマニウム粉末を混合して成形体を形成し、1500℃以上1600℃以下の酸素雰囲気中で前記成形体を焼成して、酸化物焼結体を有するスパッタリングターゲットを製造する
スパッタリングターゲットの製造方法。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007058248A1 (ja) * | 2005-11-18 | 2007-05-24 | Idemitsu Kosan Co., Ltd. | 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ |
JP2012033854A (ja) * | 2010-04-20 | 2012-02-16 | Kobe Steel Ltd | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ |
JP2013070010A (ja) * | 2010-11-26 | 2013-04-18 | Kobe Steel Ltd | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ |
JP2013093561A (ja) * | 2011-10-07 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | 酸化物半導体膜及び半導体装置 |
JP2014031312A (ja) * | 2007-07-06 | 2014-02-20 | Sumitomo Metal Mining Co Ltd | 酸化物焼結体とその製造方法、ターゲット、及びそれを用いて得られる透明導電膜ならびに透明導電性基材 |
JP2015030896A (ja) * | 2013-08-05 | 2015-02-16 | 出光興産株式会社 | スパッタリングターゲット及び酸化物透明導電膜 |
JP2017054502A (ja) * | 2015-08-31 | 2017-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置、又は該半導体装置を有する電子機器 |
WO2018074083A1 (ja) * | 2016-10-21 | 2018-04-26 | 株式会社ブイ・テクノロジー | 酸化物半導体装置及びその製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3896218B2 (ja) * | 1998-10-26 | 2007-03-22 | 株式会社神戸製鋼所 | インジウム−ゲルマニウム系蒸着ターゲット及びその製造方法 |
JP2001307553A (ja) * | 2000-04-24 | 2001-11-02 | Geomatec Co Ltd | 透明導電膜およびその製造方法並びにその用途 |
KR101251134B1 (ko) * | 2007-01-18 | 2013-04-04 | 주식회사 엘지화학 | 투명 도전 산화막, 이의 제조방법, 인듐-주석 복합 산화물,및 소결체 |
JP2009031750A (ja) | 2007-06-28 | 2009-02-12 | Fujifilm Corp | 有機el表示装置およびその製造方法 |
WO2009044896A1 (ja) * | 2007-10-03 | 2009-04-09 | Mitsui Mining & Smelting Co., Ltd. | 酸化インジウム系透明導電膜の製造方法 |
CN102171160A (zh) * | 2008-09-25 | 2011-08-31 | Jx日矿日石金属株式会社 | 透明导电膜制造用的氧化物烧结体 |
JP5552440B2 (ja) | 2009-02-13 | 2014-07-16 | 株式会社アルバック | トランジスタの製造方法 |
JP5591523B2 (ja) * | 2009-11-19 | 2014-09-17 | 出光興産株式会社 | 長期成膜時の安定性に優れたIn−Ga−Zn−O系酸化物焼結体スパッタリングターゲット |
KR101158193B1 (ko) | 2010-01-27 | 2012-06-19 | 미츠비시 쥬고교 가부시키가이샤 | 풍력 발전 장치 및 풍력 발전 장치의 요 선회 제어 방법 |
CN102742015A (zh) * | 2010-02-01 | 2012-10-17 | 日本电气株式会社 | 无定形氧化物薄膜、使用所述无定形氧化物薄膜的薄膜晶体管及其制造方法 |
JP5168599B2 (ja) | 2010-03-31 | 2013-03-21 | 独立行政法人科学技術振興機構 | 薄膜トランジスタの製造方法 |
JP2013001919A (ja) * | 2011-06-13 | 2013-01-07 | Idemitsu Kosan Co Ltd | In2O3−ZnO系スパッタリングターゲット及び酸化物導電膜 |
JP5735190B1 (ja) | 2015-01-22 | 2015-06-17 | Jx日鉱日石金属株式会社 | 酸化物焼結体、スパッタリングターゲット及び酸化物薄膜 |
CN112335058B (zh) * | 2018-06-21 | 2024-03-08 | 株式会社爱发科 | 氧化物半导体薄膜、薄膜晶体管及其制造方法、以及溅射靶材 |
-
2020
- 2020-04-27 JP JP2020543832A patent/JP7128284B2/ja active Active
- 2020-04-27 KR KR1020217041471A patent/KR20220009453A/ko not_active Application Discontinuation
- 2020-04-27 US US17/597,191 patent/US12012650B2/en active Active
- 2020-04-27 CN CN202080044257.0A patent/CN114008237B/zh active Active
- 2020-04-27 WO PCT/JP2020/017912 patent/WO2020261748A1/ja active Application Filing
- 2020-05-06 TW TW109114967A patent/TWI809271B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007058248A1 (ja) * | 2005-11-18 | 2007-05-24 | Idemitsu Kosan Co., Ltd. | 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ |
JP2014031312A (ja) * | 2007-07-06 | 2014-02-20 | Sumitomo Metal Mining Co Ltd | 酸化物焼結体とその製造方法、ターゲット、及びそれを用いて得られる透明導電膜ならびに透明導電性基材 |
JP2012033854A (ja) * | 2010-04-20 | 2012-02-16 | Kobe Steel Ltd | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ |
JP2013070010A (ja) * | 2010-11-26 | 2013-04-18 | Kobe Steel Ltd | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ |
JP2013093561A (ja) * | 2011-10-07 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | 酸化物半導体膜及び半導体装置 |
JP2015030896A (ja) * | 2013-08-05 | 2015-02-16 | 出光興産株式会社 | スパッタリングターゲット及び酸化物透明導電膜 |
JP2017054502A (ja) * | 2015-08-31 | 2017-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置、又は該半導体装置を有する電子機器 |
WO2018074083A1 (ja) * | 2016-10-21 | 2018-04-26 | 株式会社ブイ・テクノロジー | 酸化物半導体装置及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023162849A1 (ja) * | 2022-02-25 | 2023-08-31 | 株式会社アルバック | スパッタリングターゲット、スパッタリングターゲットの製造方法、酸化物半導体薄膜、薄膜半導体装置及びその製造方法 |
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