WO2009044896A1 - 酸化インジウム系透明導電膜の製造方法 - Google Patents

酸化インジウム系透明導電膜の製造方法 Download PDF

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Publication number
WO2009044896A1
WO2009044896A1 PCT/JP2008/068105 JP2008068105W WO2009044896A1 WO 2009044896 A1 WO2009044896 A1 WO 2009044896A1 JP 2008068105 W JP2008068105 W JP 2008068105W WO 2009044896 A1 WO2009044896 A1 WO 2009044896A1
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Prior art keywords
indium oxide
transparent conductive
conductive film
oxide transparent
producing indium
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PCT/JP2008/068105
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English (en)
French (fr)
Inventor
Seiichiro Takahashi
Norihiko Miyashita
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Mitsui Mining & Smelting Co., Ltd.
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Publication date
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Priority to JP2008550299A priority Critical patent/JPWO2009044896A1/ja
Publication of WO2009044896A1 publication Critical patent/WO2009044896A1/ja

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    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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Abstract

　酸化インジウムと必要に応じて錫を含有すると共に添加元素を含有する酸化物焼結体を具備するスパッタリングターゲットを用いて膜を成膜し、酸化インジウムと必要に応じて錫を含有すると共に添加元素を含有し且つアモルファスな透明導電膜を得るに際し、成膜時の水の分圧を１×１０-5Ｐａ以下とする。
PCT/JP2008/068105 2007-10-03 2008-10-03 酸化インジウム系透明導電膜の製造方法 WO2009044896A1 (ja)

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JP2008550299A JPWO2009044896A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜の製造方法

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JP2007-260438 2007-10-03
JP2007260438 2007-10-03

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WO2009044896A1 true WO2009044896A1 (ja) 2009-04-09

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WO (1) WO2009044896A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011132567A (ja) * 2009-12-24 2011-07-07 Asahi Glass Co Ltd 導電フィルムの製造方法、および合わせガラス
WO2012043570A1 (ja) * 2010-09-29 2012-04-05 東ソー株式会社 酸化物焼結体及びその製造方法、スパッタリングターゲット、酸化物透明導電膜及びその製造方法、並びに太陽電池

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3730669A4 (en) 2017-12-22 2020-12-23 Lg Chem, Ltd. METHOD FOR MANUFACTURING A TRANSPARENT CONDUCTIVE FILM
CN114008237B (zh) * 2019-06-28 2024-06-25 株式会社爱发科 溅射靶及溅射靶的制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002284570A (ja) * 2001-03-23 2002-10-03 Tosoh Corp 酸化物焼結体およびスパッタリングターゲット
JP2005135649A (ja) * 2003-10-28 2005-05-26 Mitsui Mining & Smelting Co Ltd 酸化インジウム系透明導電膜及びその製造方法
WO2007058248A1 (ja) * 2005-11-18 2007-05-24 Idemitsu Kosan Co., Ltd. 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002284570A (ja) * 2001-03-23 2002-10-03 Tosoh Corp 酸化物焼結体およびスパッタリングターゲット
JP2005135649A (ja) * 2003-10-28 2005-05-26 Mitsui Mining & Smelting Co Ltd 酸化インジウム系透明導電膜及びその製造方法
WO2007058248A1 (ja) * 2005-11-18 2007-05-24 Idemitsu Kosan Co., Ltd. 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011132567A (ja) * 2009-12-24 2011-07-07 Asahi Glass Co Ltd 導電フィルムの製造方法、および合わせガラス
WO2012043570A1 (ja) * 2010-09-29 2012-04-05 東ソー株式会社 酸化物焼結体及びその製造方法、スパッタリングターゲット、酸化物透明導電膜及びその製造方法、並びに太陽電池
US9399815B2 (en) 2010-09-29 2016-07-26 Tosoh Corporation Sintered oxide material, method for manufacturing same, sputtering target, oxide transparent electrically conductive film, method for manufacturing same, and solar cell

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KR20100071091A (ko) 2010-06-28
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