WO2020252899A1 - Oled 显示面板及制备方法 - Google Patents

Oled 显示面板及制备方法 Download PDF

Info

Publication number
WO2020252899A1
WO2020252899A1 PCT/CN2019/102543 CN2019102543W WO2020252899A1 WO 2020252899 A1 WO2020252899 A1 WO 2020252899A1 CN 2019102543 W CN2019102543 W CN 2019102543W WO 2020252899 A1 WO2020252899 A1 WO 2020252899A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
display panel
oled display
cathode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/102543
Other languages
English (en)
French (fr)
Inventor
赵舒宁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US16/616,984 priority Critical patent/US20210367186A1/en
Publication of WO2020252899A1 publication Critical patent/WO2020252899A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Definitions

  • This application relates to the field of display technology, and in particular to an OLED display panel and a manufacturing method.
  • OLED Organic Light-Emitting Display
  • bottom-emission type that is, emitting downward relative to the substrate
  • top-emission type that is, emitting upward relative to the substrate
  • the thickness of the cathode metal layer in the OLED display panel is too thin, resulting in excessive square resistance, which further causes the voltage drop from the edge of the OLED display panel to the center of the OLED display panel.
  • the present application provides an OLED display panel and a manufacturing method that can reduce the square resistance of the cathode metal layer in the OLED display panel, so as to solve the problem of the existing OLED display panel and the manufacturing method.
  • the thickness of the cathode metal layer in the OLED display panel is too large. The thinness causes the square resistance to be too large, which further makes the voltage drop from the edge of the OLED display panel to the center of the OLED display panel more obvious, and further leads to the technical problem of obvious uneven light emission when the OLED display panel is lit.
  • the present application provides an OLED display panel, including an array substrate and a color filter substrate that are arranged oppositely.
  • the array substrate includes a first substrate, a TFT layer, an anode metal layer, a pixel definition layer, and an OLED light-emitting layer arranged from bottom to top.
  • a cathode metal layer, the color filter substrate includes a second substrate, a black matrix, a color filter layer, and a protective layer;
  • a portion of the protective layer opposite to the cathode metal layer has a cathode auxiliary wiring layer, the cathode auxiliary wiring layer is in contact with the cathode metal layer, and the cathode auxiliary wiring layer has a thickness of 300 ⁇ 5000 Angstroms.
  • the material of the cathode auxiliary wiring layer is any one of ITO, IZO, and magnesium-silver alloy.
  • the cathode auxiliary wiring layer includes an ITO layer, a silver metal layer, and an ITO layer that are stacked.
  • the color filter layer includes a red color resist, a green color resist, and a blue color resist.
  • the red color resist, the green color resist, and the blue color resist The black matrix is arranged between any two, and the black matrix is arranged opposite to the pixel definition layer.
  • the present application also provides an OLED display panel, which includes an array substrate and a color filter substrate that are arranged oppositely.
  • the array substrate includes a first substrate, a TFT layer, an anode metal layer, a pixel definition layer, and an OLED light-emitting device arranged from bottom to top.
  • Layer and a cathode metal layer, the color filter substrate includes a second substrate, a black matrix, a color filter layer, and a protective layer;
  • a portion of the protective layer opposite to the cathode metal layer has a cathode auxiliary wiring layer, and the cathode auxiliary wiring layer is in contact with the cathode metal layer.
  • the material of the cathode auxiliary wiring layer is any one of ITO, IZO, and magnesium-silver alloy.
  • the cathode auxiliary wiring layer includes an ITO layer, a silver metal layer, and an ITO layer that are stacked.
  • the color filter layer includes a red color resist, a green color resist, and a blue color resist.
  • the red color resist, the green color resist, and the blue color resist The black matrix is arranged between any two, and the black matrix is arranged opposite to the pixel definition layer.
  • the present application also provides a method for manufacturing an OLED display panel, the method including:
  • a first glass substrate is provided, and a black matrix and a color filter layer are sequentially coated on the surface of the first glass substrate.
  • the black matrix is located between two adjacent color filter layers.
  • the surface of the filter layer is coated with a protective layer;
  • the color filter layer includes a red color resist, a green color resist, and a blue color resist, the red color resist, the green color resist
  • the black matrix is arranged between any two of the color resistance and the blue color resistance.
  • the thickness of the cathode auxiliary wiring layer ranges from 300 to 5000 angstroms.
  • the material of the cathode auxiliary wiring layer is any one of ITO, IZO, and magnesium-silver alloy.
  • the cathode auxiliary wiring layer includes an ITO layer, a silver metal layer, and an ITO layer that are stacked.
  • a cathode auxiliary wiring layer is added on the side of the color film substrate and is in contact with the cathode metal layer on the side of the array substrate, thereby reducing the surface area of the OLED top-emitting device.
  • the voltage drop of the cathode metal layer further improves the display effect of the OLED display panel.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of an OLED display panel of this application.
  • Fig. 2 is a flow chart of the method for manufacturing the OLED display panel of the present application.
  • 3A-3D are schematic diagrams of the manufacturing method of the OLED display panel shown in FIG. 2.
  • This application is directed to the existing OLED display panel and its manufacturing method.
  • the thickness of the cathode metal layer in the OLED display panel is too thin, resulting in too large square resistance, which further makes the voltage drop from the edge of the OLED display panel to the center of the OLED display panel more obvious Further, the OLED display panel has a technical problem of obvious uneven light emission when it is lit, and this embodiment can solve this defect.
  • the OLED display panel includes an array substrate 10 and a color filter substrate 20 that are arranged opposite to each other.
  • the array substrate 10 includes a first substrate 11, a TFT layer 12, an anode metal layer 13, and pixels arranged in sequence from bottom to top.
  • the color filter substrate 20 includes a second substrate 21, a black matrix 22, a color filter layer 23 and a protective layer 24, the array substrate 10 and the color filter layer
  • the film substrate 20 is sealed by an encapsulant 30 to obtain the OLED display panel;
  • a portion of the protective layer 24 opposite to the cathode metal layer 16 has a cathode auxiliary wiring layer 25, and the cathode auxiliary wiring layer 25 is in contact with the cathode metal layer 16.
  • the protective layer 24 can be made of photosensitive material.
  • the thickness of the cathode auxiliary wiring layer 25 ranges from 300 to 5000 angstroms.
  • the material of the cathode auxiliary wiring layer 25 is any one of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide) and a magnesium-silver alloy; preferably, the cathode auxiliary wiring layer 25 includes a stack ITO layer, silver metal layer and ITO layer are provided.
  • the color filter layer 23 includes a red color resist 231, a green color resist 232, and a blue color resist 233, any two of the red color resist 231, the green color resist 232, and the blue color resist 233
  • the black matrix 22 is arranged therebetween, and the black matrix 22 is arranged opposite to the pixel definition layer 14.
  • the thickness of the black matrix 22 ranges from 5000 to 50000 angstroms
  • the thickness of the red color resist 231, the green color resist 232 and the blue color resist 233 ranges from 5000 to 50000 angstroms
  • the thickness of the protective layer 24 ranges from 5000 to 50000 angstroms.
  • the material of the anode metal layer 13 is ITO or IZO
  • the anode metal layer 13 is preferably an ITO layer, a silver metal layer, and an ITO layer that are stacked; the thickness of the anode metal layer 13 ranges from 100 to 3000 Amy.
  • the pixel defining layer 14 is an organic photoresist, and the thickness of the pixel defining layer 14 ranges from 5000 to 50000 angstroms.
  • the material of the cathode metal layer 16 is magnesium silver alloy, aluminum, ITO or IZO, and the thickness of the cathode metal layer 16 ranges from 100 to 3000 angstroms.
  • the OLED display panel provided by the present application adds a cathode auxiliary wiring layer 25 on the side of the color filter substrate 20 and contacts with the cathode metal layer on the side of the array substrate 10, effectively reducing the cathode metal layer 16
  • the voltage drop further improves the uneven luminescence of the OLED display panel during lighting.
  • the present application also provides a manufacturing method flow of an OLED display panel, the method includes:
  • a first glass substrate 41 is provided.
  • a black matrix 42 and a color filter layer 43 are sequentially coated on the surface of the first glass substrate 41, and the black matrix 42 is located between two adjacent color filter layers 43 Then, a protective layer 44 is coated on the surface of the color filter layer 43.
  • the S10 further includes:
  • a first glass substrate 41 is provided, and a layer of black matrix 42 is deposited on the surface of the first glass substrate 41.
  • the thickness of the black matrix 42 ranges from 5000 to 50000 angstroms, and the black matrix area is defined by yellow light;
  • a red photoresist 431, a green photoresist 432, and a blue photoresist 433 are sequentially coated on the surface of the first glass substrate 41 to form a color filter layer 43.
  • the red photoresist 431, the green photoresist 432 and The black matrix 42 is arranged between any two of the blue color resistors 433, and the thicknesses of the red color resistors 431, the green color resistors 432, and the blue color resistors 433 are all in the range of 5000 to 50000 angstroms. ; Then, a protective layer 44 is coated on the surface of the color filter layer 43, and the protective layer 44 is used to protect the red color resist 431, the green color resist 432 and the blue color resist 433, so The thickness of the protective layer 44 ranges from 5000 to 50000 angstroms.
  • the protective layer 44 can be made of photosensitive material, as shown in FIG. 3A.
  • the S20 further includes:
  • a cathode auxiliary wiring layer 45 is deposited on the surface of the protective layer 44, and the cathode auxiliary wiring area is defined by yellow light, and the color filter substrate 40 is obtained.
  • the thickness of the cathode auxiliary wiring layer 45 ranges from 300 to 5000 angstroms.
  • the material of the cathode auxiliary wiring layer 45 is any one of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide) and a magnesium-silver alloy; preferably, the cathode auxiliary wiring layer 45 includes a stack The ITO layer, the silver metal layer and the ITO layer are set as shown in FIG. 3B.
  • the S30 further includes:
  • a second glass substrate 51 is provided, and a TFT layer 52 is formed on the second glass substrate 51; then an anode metal layer 53 is deposited on the TFT layer 52, and the anode area of the OLED is defined by yellow light.
  • the material of the anode metal layer 53 may preferably be ITO or IZO, and the anode metal layer 53 may also preferably be an ITO layer, a silver metal layer, and an ITO layer that are stacked; the thickness of the anode metal layer 53 ranges from 100 to 3000 Angstroms; then a layer of organic photoresist is coated on the anode metal layer 53 to form a pixel definition layer 54, using yellow light to define the OLED light-emitting area, and the thickness of the pixel definition layer 54 ranges from 5000 to 50000 Angstroms Afterwards, the OLED light-emitting material is evaporated on the pixel defining layer 54 to form an OLED light-emitting layer 55; finally, a cathode metal layer 56 is deposited
  • the S40 further includes:
  • the array substrate 50 and the color filter substrate 40 are encapsulated by an encapsulant 60, so that the cathode auxiliary wiring layer 45 is in contact with the cathode metal layer 56, and finally an OLED display panel is manufactured, as shown in FIG. 3D Show.
  • a cathode auxiliary wiring layer is added on the side of the color film substrate and is in contact with the cathode metal layer on the side of the array substrate, thereby reducing the surface area of the OLED top-emitting device.
  • the voltage drop of the cathode metal layer further improves the display effect of the OLED display panel.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED显示面板及制备方法，包括阵列基板和彩膜基板，所述阵列基板包括第一衬底、TFT层、阳极金属层、像素定义层、OLED发光层以及阴极金属层，所述彩膜基板包括第二衬底、黑色矩阵、彩色滤光层以及保护层；其中，所述保护层与所述阴极金属层相对的部位具有阴极辅助走线层，所述阴极辅助走线层与所述阴极金属层相接触。

Description

OLED显示面板及制备方法 技术领域
本申请涉及显示技术领域，尤其涉及一种OLED显示面板及制备方法。
 背景技术
目前有机电致发光显示装置（Organic Light-Emitting Display，OLED）相对于液晶显示装置具有自发光、反应快、亮度高、色彩鲜艳等优点，被认为是下一代显示技术。根据发光方向的不同，OLED显示装置可以分为底发射型（即相对于基板向下发光）和顶发射型（即相对于基板向上发光）等类型。为了增加OLED顶发射型器件的透过率，需要尽可能将阴极做薄，但阴极越薄，其方块电阻的阻值越大，导致OLED顶发射型器件电压降严重，使得在OLED显示面板边缘给阴极信号后，从OLED显示面板边缘到OLED显示面板中心电压降越明显，进一步导致OLED显示面板在点亮时出现明显的发光不均现象。
综上所述，现有的OLED显示面板及制备方法，由于OLED显示面板中的阴极金属层的厚度过薄，导致其方阻过大，进一步使从OLED显示面板边缘到OLED显示面板中心电压降越明显，更进一步导致OLED显示面板在点亮时出现明显的发光不均现象。
 技术问题
现有的OLED显示面板及制备方法，由于OLED显示面板中的阴极金属层的厚度过薄，导致其方阻过大，进一步使从OLED显示面板边缘到OLED显示面板中心电压降越明显，更进一步导致OLED显示面板在点亮时出现明显的发光不均现象。
 技术解决方案
本申请提供一种OLED显示面板及制备方法，能够减少OLED显示面板中的阴极金属层的方阻，以解决现有的OLED显示面板及制备方法，由于OLED显示面板中的阴极金属层的厚度过薄，导致其方阻过大，进一步使从OLED显示面板边缘到OLED显示面板中心电压降越明显，更进一步导致OLED显示面板在点亮时出现明显的发光不均现象的技术问题。
为解决上述问题，本申请提供的技术方案如下：
本申请提供一种OLED显示面板，包括相对设置的阵列基板和彩膜基板，所述阵列基板包括由下到上设置的第一衬底、TFT层、阳极金属层、像素定义层、OLED发光层以及阴极金属层，所述彩膜基板包括第二衬底、黑色矩阵、彩色滤光层以及保护层；
其中，所述保护层与所述阴极金属层相对的部位具有阴极辅助走线层，所述阴极辅助走线层与所述阴极金属层相接触，所述阴极辅助走线层的厚度范围为300~5000埃米。
在本申请实施例所提供的OLED显示面板中，所述阴极辅助走线层的材料为ITO、IZO以及镁银合金中的任意一种。
在本申请实施例所提供的OLED显示面板中，所述阴极辅助走线层包括层叠设置的ITO层、银金属层以及ITO层。
在本申请实施例所提供的OLED显示面板中，所述彩色滤光层包括红色色阻、绿色色阻以及蓝色色阻，所述红色色阻、所述绿色色阻以及所述蓝色色阻的任意二者之间设置有所述黑色矩阵，所述黑色矩阵与所述像素定义层相对设置。
本申请还提供一种OLED显示面板，包括相对设置的阵列基板和彩膜基板，所述阵列基板包括由下到上设置的第一衬底、TFT层、阳极金属层、像素定义层、OLED发光层以及阴极金属层，所述彩膜基板包括第二衬底、黑色矩阵、彩色滤光层以及保护层；
其中，所述保护层与所述阴极金属层相对的部位具有阴极辅助走线层，所述阴极辅助走线层与所述阴极金属层相接触。
在本申请实施例所提供的OLED显示面板中，所述阴极辅助走线层的材料为ITO、IZO以及镁银合金中的任意一种。
在本申请实施例所提供的OLED显示面板中，所述阴极辅助走线层包括层叠设置的ITO层、银金属层以及ITO层。
在本申请实施例所提供的OLED显示面板中，所述彩色滤光层包括红色色阻、绿色色阻以及蓝色色阻，所述红色色阻、所述绿色色阻以及所述蓝色色阻的任意二者之间设置有所述黑色矩阵，所述黑色矩阵与所述像素定义层相对设置。
本申请还提供一种OLED显示面板的制备方法，所述方法包括：
S10，提供第一玻璃基板，在所述第一玻璃基板表面依次涂布黑色矩阵以及彩色滤光层，所述黑色矩阵位于相邻的两所述彩色滤光层之间，之后在所述彩色滤光层的表面涂布保护层；
S20，在所述保护层的表面沉积阴极辅助走线层，利用黄光定义出阴极辅助走线区域，得到彩膜基板；
S30，提供第二玻璃基板，在所述第二玻璃基板上形成TFT层，接着在所述TFT层的上方沉积一层阳极金属层，之后在所述阳极金属层的上方涂布一层有机光阻形成像素定义层，然后在所述像素定义层以及所述阳极金属层的表面上依次制备OLED发光层以及阴极金属层，得到阵列基板；
S40，将所述阵列基板与所述彩膜基板进行封装，使所述阴极辅助走线层与所述阴极金属层相接触，最后制成OLED显示面板。
在本申请实施例所提供的OLED显示面板的制备方法中，，所述S10中，所述彩色滤光层包括红色色阻、绿色色阻以及蓝色色阻，所述红色色阻、所述绿色色阻以及所述蓝色色阻的任意二者之间设置有所述黑色矩阵。
在本申请实施例所提供的OLED显示面板的制备方法中，，所述S20中，所述阴极辅助走线层的厚度范围为300~5000埃米。
在本申请实施例所提供的OLED显示面板的制备方法中，，所述S20中，所述阴极辅助走线层的材料为ITO、IZO以及镁银合金中的任意一种。
在本申请实施例所提供的OLED显示面板的制备方法中，，所述S20中，所述阴极辅助走线层包括层叠设置的ITO层、银金属层以及ITO层。
 有益效果
本申请的有益效果为：本申请所提供的OLED显示面板及制备方法，在彩膜基板侧增加了阴极辅助走线层并与阵列基板侧的阴极金属层接触，降低了OLED顶射型器件上阴极金属层的电压降，进一步改善了OLED显示面板的显示效果。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请OLED显示面板截面结构示意图。
图2为本申请OLED显示面板的制备方法流程图。
图3A-3D为图2所述OLED显示面板的制备方法示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
本申请针对现有的OLED显示面板及制备方法，由于OLED显示面板中的阴极金属层的厚度过薄，导致其方阻过大，进一步使从OLED显示面板边缘到OLED显示面板中心电压降越明显，更进一步导致OLED显示面板在点亮时出现明显的发光不均现象的技术问题，本实施例能够解决该缺陷。
如图1所示，为本申请提供的OLED显示面板截面结构示意图。具体的，所述OLED显示面板包括相对设置的阵列基板10和彩膜基板20，所述阵列基板10包括由下到上依次设置的第一衬底11、TFT层12、阳极金属层13、像素定义层14、OLED发光层15以及阴极金属层16，所述彩膜基板20包括第二衬底21、黑色矩阵22、彩色滤光层23以及保护层24，所述阵列基板10和所述彩膜基板20通过封装胶30密封起来，得到所述OLED显示面板；
其中，所述保护层24与所述阴极金属层16相对的部位具有阴极辅助走线层25，所述阴极辅助走线层25与所述阴极金属层16相接触。优选地，所述保护层24可采用感光性材料制成。
具体的，所述阴极辅助走线层25的厚度范围为300~5000埃米。
优选地，所述阴极辅助走线层25的材料为ITO(氧化铟锡)、IZO（氧化铟锌）以及镁银合金中的任意一种；优选地，所述阴极辅助走线层25包括层叠设置的ITO层、银金属层以及ITO层。
具体的，所述彩色滤光层23包括红色色阻231、绿色色阻232以及蓝色色阻233，所述红色色阻231、所述绿色色阻232以及所述蓝色色阻233的任意二者之间设置有所述黑色矩阵22，所述黑色矩阵22与所述像素定义层14相对设置。
具体的，所述黑色矩阵22的厚度范围为5000~50000埃米，所述红色色阻231、所述绿色色阻232以及所述蓝色色阻233的厚度范围为5000~50000埃米；所述保护层24的厚度范围为5000~50000埃米。
具体的，所述阳极金属层13的材料为ITO或IZO，所述阳极金属层13优选为层叠设置的ITO层、银金属层以及ITO层；所述阳极金属层13的厚度范围为100~3000埃米。
具体的，所述像素定义层14为有机光阻，所述像素定义层14的厚度范围为5000~50000埃米。
具体的，所述阴极金属层16的材料为镁银合金、铝、ITO或IZO，所述阴极金属层16的厚度范围为100~3000埃米。
本申请所提供的OLED显示面板在所述彩膜基板20侧增加了阴极辅助走线层25并与所述阵列基板10侧的阴极金属层接触，有效地减小了所述阴极金属层16的电压降，进一步改善了所述OLED显示面板在点灯时发光不均的现象。
如图2所示，本申请还提供一种OLED显示面板的制备方法流程，所述方法包括：
S10，提供第一玻璃基板41，在所述第一玻璃基板41表面依次涂布黑色矩阵42以及彩色滤光层43，所述黑色矩阵42位于相邻的两所述彩色滤光层43之间，之后在所述彩色滤光层43的表面涂布保护层44。
具体的，所述S10还包括：
首先，提供第一玻璃基板41，在所述第一玻璃基板41表面沉积出一层黑色矩阵42，所述黑色矩阵42的厚度范围为5000~50000埃米，利用黄光定义出黑色矩阵区域；之后，在所述第一玻璃基板41表面依次涂布红色光阻431、绿色光阻432以及蓝色光阻433，形成彩色滤光层43，所述红色色阻431、所述绿色色阻432以及所述蓝色色阻433的任意二者之间设置有所述黑色矩阵42，所述红色色阻431、所述绿色色阻432以及所述蓝色色阻433的厚度范围均为5000~50000埃米；然后，在所述彩色滤光层43的表面涂布保护层44，所述保护层44的作用是保护所述红色色阻431、所述绿色色阻432以及所述蓝色色阻433，所述保护层44的厚度范围为5000~50000埃米。优选地，所述保护层44可采用感光性材料制成，如图3A所示。
S20，在所述保护层44的表面沉积阴极辅助走线层45，利用黄光定义出阴极辅助走线区域，得到彩膜基板40。
具体的，所述S20还包括：
在所述保护层44的表面沉积阴极辅助走线层45，利用黄光定义出阴极辅助走线区域，得到彩膜基板40。其中，所述阴极辅助走线层45的厚度范围为300~5000埃米。优选地，所述阴极辅助走线层45的材料为ITO(氧化铟锡)、IZO（氧化铟锌）以及镁银合金中的任意一种；优选地，所述阴极辅助走线层45包括层叠设置的ITO层、银金属层以及ITO层，如图3B所示。
S30，提供第二玻璃基板51，在所述第二玻璃基板51上形成TFT层52，接着在所述TFT层52的上方沉积一层阳极金属层53，之后在所述阳极金属层53的上方涂布一层有机光阻形成像素定义层54，然后在所述像素定义层54以及所述阳极金属层53的表面上依次制备OLED发光层55以及阴极金属层56，得到阵列基板50。
具体的，所述S30还包括：
首先，提供第二玻璃基板51，在所述第二玻璃基板51上形成TFT层52；之后在所述TFT层52的上方沉积一层阳极金属层53，利用黄光定义出OLED阳极区域，所述阳极金属层53的材料可以优选为ITO或IZO，所述阳极金属层53也可以优选为层叠设置的ITO层、银金属层以及ITO层；所述阳极金属层53的厚度范围为100~3000埃米；然后在所述阳极金属层53的上方涂布一层有机光阻形成像素定义层54，利用黄光定义出OLED发光区域，所述像素定义层54的厚度范围为5000~50000埃米；之后，在所述像素定义层54的上方蒸镀OLED发光材料，形成OLED发光层55；最后，在所述OLED发光层55的上方沉积一层阴极金属层56，得到阵列基板50如图3C所示。
S40，将所述阵列基板50与所述彩膜基板40进行封装，使所述阴极辅助走线层45与所述阴极金属层56相接触，最后制成OLED显示面板。
具体的，所述S40还包括：
将所述阵列基板50与所述彩膜基板40通过封装胶60进行封装，使所述阴极辅助走线层45与所述阴极金属层56相接触，最后制成OLED显示面板，如图3D所示。
本申请的有益效果为：本申请所提供的OLED显示面板及制备方法，在彩膜基板侧增加了阴极辅助走线层并与阵列基板侧的阴极金属层接触，降低了OLED顶射型器件上阴极金属层的电压降，进一步改善了OLED显示面板的显示效果。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (13)

  1. 一种OLED显示面板，其中，包括相对设置的阵列基板和彩膜基板，所述阵列基板包括由下到上设置的第一衬底、TFT层、阳极金属层、像素定义层、OLED发光层以及阴极金属层，所述彩膜基板包括第二衬底、黑色矩阵、彩色滤光层以及保护层；
    其中，所述保护层与所述阴极金属层相对的部位具有阴极辅助走线层，所述阴极辅助走线层与所述阴极金属层相接触，所述阴极辅助走线层的厚度范围为300~5000埃米。
  2. 根据权利要求1所述的OLED显示面板，其中，所述阴极辅助走线层的材料为ITO、IZO以及镁银合金中的任意一种。
  3. 根据权利要求1所述的OLED显示面板，其中，所述阴极辅助走线层包括层叠设置的ITO层、银金属层以及ITO层。
  4. 根据权利要求1所述的OLED显示面板，其中，所述彩色滤光层包括红色色阻、绿色色阻以及蓝色色阻，所述红色色阻、所述绿色色阻以及所述蓝色色阻的任意二者之间设置有所述黑色矩阵，所述黑色矩阵与所述像素定义层相对设置。
  5. 一种OLED显示面板，其中，包括相对设置的阵列基板和彩膜基板，所述阵列基板包括由下到上设置的第一衬底、TFT层、阳极金属层、像素定义层、OLED发光层以及阴极金属层，所述彩膜基板包括第二衬底、黑色矩阵、彩色滤光层以及保护层；
    其中，所述保护层与所述阴极金属层相对的部位具有阴极辅助走线层，所述阴极辅助走线层与所述阴极金属层相接触。
  6. 根据权利要求5所述的OLED显示面板，其中，所述阴极辅助走线层的材料为ITO、IZO以及镁银合金中的任意一种。
  7. 根据权利要求5所述的OLED显示面板，其中，所述阴极辅助走线层包括层叠设置的ITO层、银金属层以及ITO层。
  8. 根据权利要求5所述的OLED显示面板，其中，所述彩色滤光层包括红色色阻、绿色色阻以及蓝色色阻，所述红色色阻、所述绿色色阻以及所述蓝色色阻的任意二者之间设置有所述黑色矩阵，所述黑色矩阵与所述像素定义层相对设置。
  9. 一种OLED显示面板的制备方法，其中，所述方法包括：
    S10，提供第一玻璃基板，在所述第一玻璃基板表面依次涂布黑色矩阵以及彩色滤光层，所述黑色矩阵位于相邻的两所述彩色滤光层之间，之后在所述彩色滤光层的表面涂布保护层；
    S20，在所述保护层的表面沉积阴极辅助走线层，利用黄光定义出阴极辅助走线区域，得到彩膜基板；
    S30，提供第二玻璃基板，在所述第二玻璃基板上形成TFT层，接着在所述TFT层的上方沉积一层阳极金属层，之后在所述阳极金属层的上方涂布一层有机光阻形成像素定义层，然后在所述像素定义层以及所述阳极金属层的表面上依次制备OLED发光层以及阴极金属层，得到阵列基板；
    S40，将所述阵列基板与所述彩膜基板进行封装，使所述阴极辅助走线层与所述阴极金属层相接触，最后制成OLED显示面板。
  10. 根据权利要求9所述的OLED显示面板的制备方法，其中，所述S10中，所述彩色滤光层包括红色色阻、绿色色阻以及蓝色色阻，所述红色色阻、所述绿色色阻以及所述蓝色色阻的任意二者之间设置有所述黑色矩阵。
  11. 根据权利要求9所述的OLED显示面板的制备方法，其中，所述S20中，所述阴极辅助走线层的厚度范围为300~5000埃米。
  12. 根据权利要求9所述的OLED显示面板的制备方法，其中，所述S20中，所述阴极辅助走线层的材料为ITO、IZO以及镁银合金中的任意一种。
  13. 根据权利要求9所述的OLED显示面板的制备方法，其中，所述S20中，所述阴极辅助走线层包括层叠设置的ITO层、银金属层以及ITO层。
PCT/CN2019/102543 2019-06-21 2019-08-26 Oled 显示面板及制备方法 Ceased WO2020252899A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/616,984 US20210367186A1 (en) 2019-06-21 2019-08-26 Oled display panel and manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910543026.3 2019-06-21
CN201910543026.3A CN110299387A (zh) 2019-06-21 2019-06-21 Oled显示面板及制备方法

Publications (1)

Publication Number Publication Date
WO2020252899A1 true WO2020252899A1 (zh) 2020-12-24

Family

ID=68028479

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/102543 Ceased WO2020252899A1 (zh) 2019-06-21 2019-08-26 Oled 显示面板及制备方法

Country Status (3)

Country Link
US (1) US20210367186A1 (zh)
CN (1) CN110299387A (zh)
WO (1) WO2020252899A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110518035A (zh) * 2019-08-09 2019-11-29 深圳市华星光电半导体显示技术有限公司 有机发光二极管显示面板
CN111048684A (zh) * 2019-11-01 2020-04-21 深圳市华星光电半导体显示技术有限公司 一种封装结构、封装结构制程方法及显示面板
CN111276632B (zh) * 2020-02-19 2021-03-16 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法
CN111341933B (zh) * 2020-03-03 2023-04-07 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
CN112133734B (zh) * 2020-09-29 2022-08-30 湖北长江新型显示产业创新中心有限公司 显示面板及显示装置
CN114388560B (zh) * 2020-10-22 2024-08-23 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置
CN112786805A (zh) * 2021-01-08 2021-05-11 深圳市华星光电半导体显示技术有限公司 Oled显示装置
CN113327964A (zh) * 2021-05-28 2021-08-31 武汉华星光电技术有限公司 Oled显示面板
CN114203788B (zh) * 2021-12-10 2023-06-30 深圳市华星光电半导体显示技术有限公司 显示面板、显示装置和显示面板的制备方法
CN114628481B (zh) * 2022-03-25 2025-02-14 京东方科技集团股份有限公司 显示面板及显示装置
CN115588358A (zh) * 2022-08-25 2023-01-10 合肥维信诺科技有限公司 盖板、可折叠显示模组以及显示装置
CN116887616B (zh) * 2023-07-11 2024-10-29 滁州惠科光电科技有限公司 显示面板及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103545345A (zh) * 2013-11-11 2014-01-29 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
CN103972270A (zh) * 2014-05-09 2014-08-06 京东方科技集团股份有限公司 Oled显示面板及应用其的oled显示装置
CN107394052A (zh) * 2017-08-31 2017-11-24 京东方科技集团股份有限公司 一种有机发光二极管器件及其制备方法、显示装置
CN109300959A (zh) * 2018-10-09 2019-02-01 合肥鑫晟光电科技有限公司 显示面板及其制备方法、显示装置
CN109461840A (zh) * 2018-11-02 2019-03-12 合肥鑫晟光电科技有限公司 封装盖板、oled显示基板、显示装置及制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4367346B2 (ja) * 2005-01-20 2009-11-18 セイコーエプソン株式会社 電気光学装置及びその製造方法、並びに電子機器
JP2013196919A (ja) * 2012-03-21 2013-09-30 Sony Corp 有機ｅｌ表示装置、有機ｅｌ表示装置の製造方法およびカラーフィルタ基板
CN105428548A (zh) * 2015-11-24 2016-03-23 昆山国显光电有限公司 Oled显示结构及制造方法
CN207082555U (zh) * 2017-08-28 2018-03-09 京东方科技集团股份有限公司 显示基板及显示面板
CN108539043B (zh) * 2018-04-12 2020-07-17 京东方科技集团股份有限公司 一种oled显示面板及其制造方法、显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103545345A (zh) * 2013-11-11 2014-01-29 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
CN103972270A (zh) * 2014-05-09 2014-08-06 京东方科技集团股份有限公司 Oled显示面板及应用其的oled显示装置
CN107394052A (zh) * 2017-08-31 2017-11-24 京东方科技集团股份有限公司 一种有机发光二极管器件及其制备方法、显示装置
CN109300959A (zh) * 2018-10-09 2019-02-01 合肥鑫晟光电科技有限公司 显示面板及其制备方法、显示装置
CN109461840A (zh) * 2018-11-02 2019-03-12 合肥鑫晟光电科技有限公司 封装盖板、oled显示基板、显示装置及制作方法

Also Published As

Publication number Publication date
US20210367186A1 (en) 2021-11-25
CN110299387A (zh) 2019-10-01

Similar Documents

Publication Publication Date Title
WO2020252899A1 (zh) Oled 显示面板及制备方法
WO2020206810A1 (zh) 双面显示面板及其制备方法
CN103456764B (zh) Oled阵列基板及其制造方法、显示装置
WO2020199445A1 (zh) 一种oled显示器件及其制备方法
US7645176B2 (en) Organic electro-luminescence display and fabricating method thereof
WO2020233284A1 (zh) 显示面板及其制作方法、显示装置
CN106531770A (zh) 一种有机电致发光显示面板、其制作方法及显示装置
TWI413249B (zh) 有機發光二極體顯示裝置及其製造方法
CN106711179B (zh) Amoled透明显示器及其制作方法
KR20110021090A (ko) 유기전계 발광소자 제조 용 쉐도우 마스크
WO2016074372A1 (zh) Amoled显示面板及其制作方法、显示装置
CN104538428A (zh) Coa型woled结构及制作方法
CN106098954B (zh) 一种有机电致发光器件及其制作方法、显示装置
CN111430445B (zh) 一种显示基板及其制备方法、显示装置
WO2015196613A1 (zh) 彩膜基板及其制造方法、显示面板
WO2019196336A1 (zh) Oled面板
WO2020172953A1 (zh) Oled显示装置及其制作方法
WO2020155464A1 (zh) 显示面板及其制备方法、电子装置
CN115241266A (zh) 一种显示基板及其制备方法、显示装置
JP7255774B2 (ja) 有機発光ダイオード表示基板、有機発光ダイオード表示装置及び有機発光ダイオード表示基板を製造する方法
JP2009010258A (ja) 画像表示装置
WO2020077698A1 (zh) 一种有机发光二极管器件的封装结构及其制作方法
CN108878673A (zh) 显示基板及其制作方法、显示装置
WO2021027048A1 (zh) 有机发光二极管显示面板
WO2021082095A1 (zh) 一种oled显示面板及其制造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19934237

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19934237

Country of ref document: EP

Kind code of ref document: A1