WO2021027048A1 - 有机发光二极管显示面板 - Google Patents

有机发光二极管显示面板 Download PDF

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Publication number
WO2021027048A1
WO2021027048A1 PCT/CN2019/111260 CN2019111260W WO2021027048A1 WO 2021027048 A1 WO2021027048 A1 WO 2021027048A1 CN 2019111260 W CN2019111260 W CN 2019111260W WO 2021027048 A1 WO2021027048 A1 WO 2021027048A1
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layer
organic light
emitting diode
display panel
diode display
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PCT/CN2019/111260
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English (en)
French (fr)
Inventor
赵舒宁
徐源竣
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/615,834 priority Critical patent/US20220190281A1/en
Publication of WO2021027048A1 publication Critical patent/WO2021027048A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Definitions

  • the present invention relates to the field of display technology, in particular to an organic light emitting diode display panel.
  • the cathode of the organic light-emitting diode light-emitting device is a metal on the whole surface.
  • the cathode layer needs to be as thin as possible, but the thinner the cathode layer, the greater the resistance.
  • the IR drop IR Drop
  • the edges will be bright and the middle will be dark.
  • FIG. 1 it is a conventional organic light emitting diode display panel 10, which includes a first substrate 100, a thin film transistor layer 101, an anode layer 102, a pixel definition layer 103, an organic light emitting layer 104, and a cathode layer 105.
  • the cathode layer 105 needs to be made as thin as possible, but the thinner the cathode layer 105, the greater the resistance; after the cathode layer 105 signal is given from the edge of the panel, the IR voltage drop from the edge of the panel to the center of the panel (IR Drop) will gradually increase. After the panel is lit, the edges of the panel will be bright and the middle will be dark. This phenomenon needs to be improved to solve the problem of uneven brightness in conventional organic light emitting diode display panels.
  • the present invention provides an organic light emitting diode display panel, which can reduce the IR drop of the organic light emitting diode display panel and improve the problem of bright edges and dark middle of the panel.
  • the invention adds a cathode auxiliary line on the side of the color film substrate, and the cathode auxiliary line is in contact with the cathode layer of the organic light emitting diode after the panel is attached. Because the IR voltage drop of the cathode auxiliary line is very small, after contacting the cathode layer of the organic light-emitting diode, the IR voltage drop of the panel can be reduced.
  • an organic light emitting diode display panel including:
  • the second substrate is arranged opposite to the first substrate; the color filter layer is arranged on the second substrate and includes a plurality of sub-pixels arranged in an array and a black matrix, and each sub-pixel is separated by a black matrix;
  • a protective layer is arranged on the color filter layer; a cathode auxiliary line is arranged on the protective layer in a crisscross pattern; wherein, the cathode auxiliary line and the cathode layer are electrically connected to reduce the IR of the cathode layer Pressure drop.
  • the cathode auxiliary line corresponds to the pattern of the black matrix and is arranged on the protective layer in a crisscross pattern.
  • the cathode auxiliary line is composed of indium tin oxide (ITO), indium doped zinc oxide (IZO), magnesium silver (MgAg), and indium tin oxide/silver/oxide Any of indium tin composite materials.
  • the thickness of the cathode auxiliary wire is 300-5000 ⁇ .
  • the anode layer is composed of any one of indium tin oxide, indium-doped zinc oxide, and indium tin oxide/silver/indium tin oxide composite materials.
  • the thickness of the anode layer is 100-3000 ⁇ .
  • the thickness of the color filter layer is 5000-50000 ⁇ .
  • the cathode layer is made of silver magnesium, indium-doped zinc oxide, indium tin oxide, aluminum, indium tin oxide/silver/indium tin oxide composite material, indium-doped zinc oxide/silver/indium-doped zinc oxide Composed of any of composite materials.
  • the thickness of the cathode layer is 100-3000 ⁇ .
  • the thickness of the protective layer is 5000-50000 ⁇ .
  • the present invention further proposes another organic light emitting diode display panel, including:
  • the second substrate is arranged opposite to the first substrate;
  • the color filter layer is arranged on the second substrate, and includes a plurality of sub-pixels arranged in an array and a crisscross black matrix, and each sub-pixel passes through the The black matrix is separated;
  • the protective layer is arranged on the color filter layer;
  • the cathode auxiliary line is composed of indium tin oxide, indium-doped zinc oxide, magnesium silver, and indium tin oxide/silver/indium tin oxide composite materials Wherein, the cathode auxiliary line corresponds to the pattern of the black matrix and is arranged on the protective layer in a crisscross pattern; and wherein, the cathode auxiliary line and the
  • the thickness of the cathode auxiliary wire is 300-5000 ⁇ .
  • the anode layer is composed of any one of indium tin oxide, indium-doped zinc oxide, and indium tin oxide/silver/indium tin oxide composite materials.
  • the thickness of the anode layer is 100-3000 ⁇ .
  • the thickness of the color filter layer is 5000-50000 ⁇ .
  • the cathode layer is made of silver magnesium, indium-doped zinc oxide, indium tin oxide, aluminum, indium tin oxide/silver/indium tin oxide composite material, indium-doped zinc oxide/silver/indium-doped zinc oxide Composed of any of composite materials.
  • the thickness of the cathode layer is 100-3000 ⁇ .
  • the thickness of the protective layer is 5000-50000 ⁇ .
  • the organic light-emitting diode display panel proposed by the present invention can reduce the IR voltage drop of the organic light-emitting diode display panel through the electrical connection of the cathode auxiliary line 213 and the cathode layer 205, thereby improving the problem of bright edges and dark middle of the panel.
  • Figure 1 is a conventional organic light emitting diode display panel
  • FIG. 2 is an organic light emitting diode display panel according to an embodiment of the invention.
  • an organic light emitting diode display panel 20 As shown in FIG. 2, it is an organic light emitting diode display panel 20 according to an embodiment of the present invention, including:
  • Each sub-pixel is separated by a black matrix 2114; a protective layer 212, the thickness of the protective layer 212 is 5000-50000 ⁇ , is arranged on the color filter layer 211; the cathode auxiliary line 213 is arranged in a crisscross pattern On the protective layer 212; wherein, the cathode auxiliary line 213 and the cathode layer 205 are electrically connected to reduce the IR voltage drop of the cathode layer.
  • the cathode auxiliary line 213 corresponds to the pattern of the black matrix 2114, is disposed on the protective layer 212 in a crisscross pattern, and is electrically connected to the cathode layer 205.
  • the cathode auxiliary line 213 is made of indium tin oxide (ITO), indium doped zinc oxide (IZO), magnesium silver oxide (MgAg) , And any of the indium tin oxide/silver/indium tin oxide composite materials.
  • the thickness of the cathode auxiliary line 213 is 300-5000 ⁇ .
  • the anode layer 202 is composed of any one of indium tin oxide, indium doped zinc oxide, and indium tin oxide/silver/indium tin oxide composite materials.
  • the thickness of the anode layer 202 is 100-3000 ⁇ .
  • the cathode layer 205 is made of silver magnesium, indium-doped zinc oxide, indium tin oxide, aluminum, indium tin oxide/silver/indium tin oxide composite material, and indium-doped zinc oxide/silver/indium-doped zinc oxide composite material Consisting of any of them.
  • the thickness of the cathode layer 205 is 100-3000 ⁇ .
  • the specific manufacturing process of the organic light emitting diode display panel 20 of the embodiment of the present invention includes:
  • the color filter film layer 211 is produced, and the black matrix layer material is coated on the second substrate 210, and the pattern of the black matrix 2114 is defined by exposure, development, etc.; then a layer of red sub-pixel light is coated Use exposure, development, etc. to define the pattern of the red sub-pixel 2111; then, apply a layer of green sub-pixel photoresist, use exposure, development, etc.
  • the sub-pixel photoresist again uses exposure, development and other methods to define the pattern of the blue sub-pixel 2113; then a protective layer material is coated on the color filter layer 211 to form a protective layer 212, which is used to protect the color filter Film layer 211; Finally, a cathode auxiliary line metal layer is deposited on the protective layer 212, and then the pattern of the cathode auxiliary line 213 is defined by photoresist coating, exposure, development, and etching to complete the production of the color film substrate.
  • a metal layer is deposited on the other first substrate 200, and the pattern of the thin film transistor layer 201 is formed by photoresist coating, exposure, development and etching; then the anode layer metal is deposited on the thin film transistor layer 201, and the The pattern of the anode layer 202 is defined by photoresist coating, exposure, development and etching; then a layer of organic photoresist is coated on the anode layer 202, and the pixel definition layer 203 is completed by exposure, development, etc.; then, in the pixel definition An organic light-emitting material is vapor-deposited on the layer 203 to form an organic light-emitting layer 204; then, a cathode layer metal is deposited on the organic light-emitting layer 204 to form a cathode layer 205 to complete the fabrication of the array substrate.
  • the above second substrate and the first substrate are bonded together to complete the manufacture of the organic light emitting diode display panel 20.
  • the organic light-emitting diode display panel proposed by the present invention can reduce the IR voltage drop of the organic light-emitting diode display panel through the electrical connection of the cathode auxiliary line 213 and the cathode layer 205, thereby improving the problem of bright edges and dark middle of the panel.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种有机发光二极管显示面板,包括:第一基板;薄膜电晶体层,设置在所述第一基板上;发光器件层,设置在所述薄膜电晶体层上;第二基板,和所述第一基板相对设置;彩色滤光层,设置在所述第二基板上;保护层,设置在所述彩色滤光层上;阴极辅助线,纵横交错地设置在所述保护层上;其中,所述阴极辅助线和所述阴极层电连接以降低所述阴极层的IR压降。

Description

有机发光二极管显示面板 技术领域
本发明涉及显示技术领域,具体涉及有机发光二极管显示面板。
 背景技术
目前，有机发光二极管发光器件的阴极为整面金属,为了增加光的透过率,阴极层需尽可能地做薄,但阴极层越薄,电阻越大。当从面板边缘给阴极层信号以后,从面板边缘到面板中心,IR压降(IR Drop)会逐渐增大。面板点亮以后,会出现边缘亮,中间暗的现象。
 技术问题
如图1所示,为习知的有机发光二极管显示面板10,包括第一基板100、薄膜电晶体层101、阳极层102、像素定义层103、有机发光层104以及阴极层105。为了增加光的透过率,阴极层105需被尽可能地做薄,但阴极层105越薄,电阻越大;从面板边缘给阴极层105信号以后,从面板边缘到面板中心,IR压降(IR Drop)会逐渐增大。面板点亮以后,会出现面板的边缘亮,中间暗的现象。此一现象须要改善，以解决习知有机发光二极管显示面板会有亮度明暗不均的问题。
 技术解决方案
为解决上述问题，本发明提供一种有机发光二极管显示面板,其可降低有机发光二极管显示面板的IR压降(IR Drop),改善面板的边缘亮,中间暗的问题。本发明在彩膜基板侧增加阴极辅助线,面板贴合之后使阴极辅助线和有机发光二极管的阴极层接触。因为阴极辅助线的IR压降很小,和有机发光二极管的阴极层接触后,可以减小面板的IR压降。
为实现上述目的,本发明提出一种有机发光二极管显示面板,包括:
第一基板;薄膜电晶体层,设置在所述第一基板上;发光器件层,设置在所述薄膜电晶体层上,包括:阳极层、像素定义层、有机发光层、以及阴极层;第二基板,和所述第一基板相对设置;彩色滤光层,设置在所述第二基板上,包括多个阵列排列的子像素和黑色矩阵,每一个子像素之间通过黑色矩阵隔开;保护层,设置在所述彩色滤光层上;阴极辅助线,纵横交错地设置在所述保护层上;其中,所述阴极辅助线和所述阴极层电连接以降低所述阴极层的IR压降。
较佳地,所述阴极辅助线对应于所述黑色矩阵的图案,纵横交错地设置在所述保护层上。
较佳地,所述阴极辅助线由氧化铟锡(indium tin oxide, ITO)、铟掺杂氧化锌(Indium doped zinc oxide, IZO)、银化镁(MgAg)、以及氧化铟锡/银/氧化铟锡复合材料中的任一所组成。
较佳地,所述阴极辅助线的厚度为300-5000Å。
较佳地,所述阳极层由氧化铟锡、铟掺杂氧化锌、以及氧化铟锡/银/氧化铟锡复合材料中的任一所组成。
较佳地,所述阳极层的厚度为100-3000Å。
较佳地,所述彩色滤光层的厚度为5000-50000Å。
较佳地,所述阴极层由银化镁、铟掺杂氧化锌、氧化铟锡、铝、氧化铟锡/银/氧化铟锡复合材料、铟掺杂氧化锌/银/铟掺杂氧化锌复合材料中的任一所组成。
较佳地,所述阴极层的厚度为100-3000Å。
较佳地,所述保护层的厚度为5000-50000Å。
本发明进一步提出另一种有机发光二极管显示面板,包括:
第一基板;薄膜电晶体层,设置在所述第一基板上;发光器件层,设置在所述薄膜电晶体层上,包括:阳极层、像素定义层、有机发光层、以及阴极层;第二基板,和所述第一基板相对设置;彩色滤光层,设置在所述第二基板上,包括多个阵列排列的子像素和纵横交错的黑色矩阵,每一个子像素之间通过所述黑色矩阵隔开;保护层,设置在所述彩色滤光层上;阴极辅助线,由氧化铟锡、铟掺杂氧化锌、银化镁、以及氧化铟锡/银/氧化铟锡复合材料中的任一所组成;其中,所述阴极辅助线对应于所述黑色矩阵的图案,纵横交错地设置在所述保护层上;以及其中,所述阴极辅助线和所述阴极层电连接以降低所述阴极层的IR压降。
较佳地,所述阴极辅助线的厚度为300-5000Å。
较佳地,所述阳极层由氧化铟锡、铟掺杂氧化锌、以及氧化铟锡/银/氧化铟锡复合材料中的任一所组成。
较佳地,所述阳极层的厚度为100-3000Å。
较佳地,所述彩色滤光层的厚度为5000-50000Å。
较佳地,所述阴极层由银化镁、铟掺杂氧化锌、氧化铟锡、铝、氧化铟锡/银/氧化铟锡复合材料、铟掺杂氧化锌/银/铟掺杂氧化锌复合材料中的任一所组成。
较佳地,所述阴极层的厚度为100-3000Å。
较佳地,所述保护层的厚度为5000-50000Å。
 有益效果
本发明提出的有机发光二极管显示面板,通过阴极辅助线213和阴极层205的电连接,可降低有机发光二极管显示面板的IR压降,因此改善面板的边缘亮,中间暗的问题。
 附图说明
图1为习知的有机发光二极管显示面板;以及
图2为本发明实施例的有机发光二极管显示面板。
 本发明的最佳实施方式
以下将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。
以下实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。
如图2所示,为本发明实施例的有机发光二极管显示面板20,包括:
第一基板200;薄膜电晶体层201,设置在所述第一基板200上;发光器件层,设置在所述薄膜电晶体层201上,包括:阳极层202、像素定义层203、有机发光层204、以及阴极层205;第二基板210,和所述第一基板200相对设置;彩色滤光层211,设置在所述第二基板210上,所述彩色滤光层211的厚度为5000-50000Å,包括多个阵列排列的红色子像素2111、绿色子像素2112、蓝色子像素2113和黑色矩阵2114。每一个子像素之间通过黑色矩阵2114隔开;保护层212,所述保护层212的厚度为5000-50000Å,设置在所述彩色滤光层211上;阴极辅助线213,纵横交错地设置在所述保护层212上;其中,所述阴极辅助线213和所述阴极层205电连接以降低所述阴极层的IR压降。
阴极辅助线213对应于所述黑色矩阵2114的图案,纵横交错地设置在所述保护层212上,并且和阴极层205电连接。
所述阴极辅助线213由氧化铟锡(indium tin oxide, ITO)、铟掺杂氧化锌(Indium doped zinc oxide, IZO)、银化镁(MgAg) 、以及氧化铟锡/银/氧化铟锡复合材料中的任一所组成。所述阴极辅助线213的厚度为300-5000Å。
所述阳极层202由氧化铟锡、铟掺杂氧化锌、氧化铟锡/银/氧化铟锡复合材料中的任一所组成。所述阳极层202的厚度为100-3000Å。
所述阴极层205由银化镁、铟掺杂氧化锌、氧化铟锡、铝、氧化铟锡/银/氧化铟锡复合材料、以及铟掺杂氧化锌/银/铟掺杂氧化锌复合材料中的任一所组成。所述阴极层205的厚度为100-3000Å。
本发明实施例的有机发光二极管显示面板20的具体制作流程,包括:
清洗第二基板210之后,制作彩色滤光膜层211,在第二基板210上涂布黑色矩阵层材料,利用曝光、显影等方式定义黑色矩阵2114的图案;接着涂布一层红色子像素光阻,利用曝光、显影等方式定义红色子像素2111的图案;接着,涂布一层绿色子像素光阻,利用曝光、显影等方式定义绿色子像素2112的图案;然后再涂布一层蓝色子像素光阻,再次利用曝光、显影等方式定义蓝色子像素2113的图案;接下来在彩色滤光膜层211上涂布一保护层材料以形成保护层212,用于包护彩色滤光膜层211;最后在该保护层212上沉积阴极辅助线金属层,再利用光阻涂布、曝光、显影及蚀刻等方式定义阴极辅助线213的图案,以完成彩膜基板的制作。
接下来,在另第一基板200上沉积金属层,利用光阻涂布、曝光、显影及蚀刻等方式形成薄膜电晶体层201图案;接着在薄膜电晶体层201上沉积阳极层金属,并利用光阻涂布、曝光、显影及蚀刻等方式定义阳极层202的图案;接着在阳极层202上涂布一层有机光阻,利用曝光、显影等方式完成像素定义层203;然后,在像素定义层203上蒸镀有机发光材料以形成有机发光层204;接着,在该有机发光层204上沉积阴极层金属,形成阴极层205,完成阵列基板的制作。
完成上述流程后,将上述第二基板和第一基板贴合,完成有机发光二极管显示面板20的制作。
本发明提出的有机发光二极管显示面板,通过阴极辅助线213和阴极层205的电连接,可降低有机发光二极管显示面板的IR压降,因此改善面板的边缘亮,中间暗的问题。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。

Claims (18)

  1. 一种有机发光二极管显示面板,包括:
    第一基板;
    薄膜电晶体层,设置在所述第一基板上;
    发光器件层,设置在所述薄膜电晶体层上,包括:阳极层、像素定义层、有机发光层、以及阴极层;
    第二基板,和所述第一基板相对设置;
    彩色滤光层,设置在所述第二基板上,包括多个阵列排列的子像素和纵横交错的黑色矩阵,每一个子像素之间通过所述黑色矩阵隔开;
    保护层,设置在所述彩色滤光层上;
    阴极辅助线,纵横交错地设置在所述保护层上;
    其中,所述阴极辅助线和所述阴极层电连接以降低所述阴极层的IR压降。
  2. 如权利要求1所述的有机发光二极管显示面板,其中述阴极辅助线对应于所述黑色矩阵的图案,纵横交错地设置在所述保护层上。
  3. 如权利要求1所述的有机发光二极管显示面板,其中所述阴极辅助线由氧化铟锡、铟掺杂氧化锌、银化镁、以及氧化铟锡/银/氧化铟锡复合材料中的任一所组成。
  4. 如权利要求3所述的有机发光二极管显示面板,其中所述阴极辅助线的厚度为300-5000Å。
  5. 如权利要求1所述的有机发光二极管显示面板,其中所述阳极层由氧化铟锡、铟掺杂氧化锌、以及氧化铟锡/银/氧化铟锡复合材料中的任一所组成。
  6. 如权利要求5所述的有机发光二极管显示面板,其中所述阳极层的厚度为100-3000Å。
  7. 如权利要求1所述的有机发光二极管显示面板,其中所述彩色滤光层的厚度为5000-50000Å。
  8. 如权利要求1所述的有机发光二极管显示面板,其中所述阴极层由银化镁、铟掺杂氧化锌、氧化铟锡、铝、氧化铟锡/银/氧化铟锡复合材料、铟掺杂氧化锌/银/铟掺杂氧化锌复合材料中的任一所组成。
  9. 如权利要求8所述的有机发光二极管显示面板,其中所述阴极层的厚度为100-3000Å。
  10. 如权利要求1所述的有机发光二极管显示面板,其中所述保护层的厚度为5000-50000Å。
  11. 一种有机发光二极管显示面板,包括:
    第一基板;
    薄膜电晶体层,设置在所述第一基板上;
    发光器件层,设置在所述薄膜电晶体层上,包括:阳极层、像素定义层、有机发光层、以及阴极层;
    第二基板,和所述第一基板相对设置;
    彩色滤光层,设置在所述第二基板上,包括多个阵列排列的子像素和纵横交错的黑色矩阵,每一个子像素之间通过所述黑色矩阵隔开;
    保护层,设置在所述彩色滤光层上;
    阴极辅助线,由氧化铟锡、铟掺杂氧化锌、银化镁、以及氧化铟锡/银/氧化铟锡复合材料中的任一所组成;
    其中,所述阴极辅助线对应于所述黑色矩阵的图案,纵横交错地设置在所述保护层上;以及
    其中,所述阴极辅助线和所述阴极层电连接以降低所述阴极层的IR压降。
  12. 如权利要求11所述的有机发光二极管显示面板,其中所述阴极辅助线的厚度为300-5000Å。
  13. 如权利要求11所述的有机发光二极管显示面板,其中所述阳极层由氧化铟锡、铟掺杂氧化锌、以及氧化铟锡/银/氧化铟锡复合材料中的任一所组成。
  14. 如权利要求13所述的有机发光二极管显示面板,其中所述阳极层的厚度为100-3000Å。
  15. 如权利要求11所述的有机发光二极管显示面板,其中所述彩色滤光层的厚度为5000-50000Å。
  16. 如权利要求11所述的有机发光二极管显示面板,其中所述阴极层由银化镁、铟掺杂氧化锌、氧化铟锡、铝、氧化铟锡/银/氧化铟锡复合材料、铟掺杂氧化锌/银/铟掺杂氧化锌复合材料中的任一所组成。
  17. 如权利要求16所述的有机发光二极管显示面板,其中所述阴极层的厚度为100-3000Å。
  18. 如权利要求11所述的有机发光二极管显示面板,其中所述保护层的厚度为5000-50000Å。
PCT/CN2019/111260 2019-08-09 2019-10-15 有机发光二极管显示面板 WO2021027048A1 (zh)

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