WO2020235091A1 - 荷電粒子線装置及び荷電粒子線装置の制御方法 - Google Patents

荷電粒子線装置及び荷電粒子線装置の制御方法 Download PDF

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WO2020235091A1
WO2020235091A1 PCT/JP2019/020503 JP2019020503W WO2020235091A1 WO 2020235091 A1 WO2020235091 A1 WO 2020235091A1 JP 2019020503 W JP2019020503 W JP 2019020503W WO 2020235091 A1 WO2020235091 A1 WO 2020235091A1
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Prior art keywords
image
particle beam
charged particle
sample
diffraction pattern
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English (en)
French (fr)
Japanese (ja)
Inventor
高志 土橋
央和 玉置
大海 三瀬
峻大郎 伊藤
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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Priority to US17/608,651 priority Critical patent/US11791131B2/en
Priority to PCT/JP2019/020503 priority patent/WO2020235091A1/ja
Priority to JP2021520016A priority patent/JP7168777B2/ja
Publication of WO2020235091A1 publication Critical patent/WO2020235091A1/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20058—Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/2055—Analysing diffraction patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
    • G01N2223/056—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction
    • G01N2223/0566—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction analysing diffraction pattern
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/30—Accessories, mechanical or electrical features
    • G01N2223/303—Accessories, mechanical or electrical features calibrating, standardising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2802—Transmission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Definitions

  • the present invention relates to a charged particle beam device and a control method thereof.
  • the resolution of the obtained image changes depending on the crystal orientation of the sample irradiated with the electron beam.
  • the crystal orientation of the sample may be known from the appearance of the sample, but in the case of a sample prepared by a focused ion beam device or the like, the appearance and the crystal direction inside are different and cannot be known from the appearance. If the crystal orientation of the sample cannot be determined from the appearance, it is necessary to calculate the deviation amount and direction of the crystal orientation of the sample using a diffraction pattern (diffraction pattern) obtained by irradiating the electron beam.
  • Patent Document 1 As a method for calculating the crystal orientation of a sample, a method using a diffraction pattern as described in Patent Document 1 and Patent Document 2 is known.
  • Patent Document 1 describes a method of calculating the crystal orientation of a sample by using a diffraction spot included in a diffraction pattern. Specifically, "based on the brightness distribution of the diffraction spots in the electron beam diffraction pattern (22b) displayed on the display unit (13), the main spots (23) are superimposed and displayed so as to be located on the circumference. A circular pattern (26) for fitting is set, and a main spot located on the circumference of the circular pattern (26) starting from the center position (27) of the displayed circular pattern (26). A vector (28) to be displayed with the position of (23) as an end point is set, and crystal orientation is executed based on the orientation and size of the displayed vector (28). ”Observation method is disclosed. There is.
  • Patent Document 2 states, "It is used in a charged particle beam device that injects a charged particle beam onto the surface of a sample placed on a sample table, and is required to change the incident direction of the charged particle beam with respect to the sample.
  • a device that calculates the tilt angle amount which is a command value for controlling the tilt direction and the tilt amount of the sample and / or the charged particle beam, and the incident direction of the charged particle beam on the sample is a predetermined incident.
  • the incident of the charged particle beam on the crystal specified on the crystal orientation diagram which is a diagram showing the incident direction of the charged particle beam on the crystal coordinate system of the crystal at the selected position on the surface in the directional state.
  • a tilt angle amount calculation device including a tilt angle amount calculation unit that calculates the tilt angle amount based on information indicating a direction is disclosed.
  • the crystal orientation of the sample after moving the sample stage does not match the crystal orientation of the desired sample. Therefore, when analyzing the crystal structure of a sample, it has conventionally been necessary to check the image obtained by the user against the simulation result.
  • the present invention realizes a charged particle beam apparatus that can automatically and highly accurately adjust the crystal orientation of a desired sample.
  • a typical example of the invention disclosed in the present application is as follows. That is, it is a charged particle beam device that irradiates a charged particle beam and observes a sample, a moving mechanism that holds and moves the sample, a particle source that outputs the charged particle beam, and the charged particle beam with respect to the sample.
  • An optical element that adjusts the irradiation direction and focus of the particle beam, a detector that detects a signal emitted from the sample irradiated with the charged particle beam, and the moving mechanism, the particle source, and the optical element based on observation conditions.
  • control mechanism for controlling the detector, acquires an image of a diffraction pattern including a plurality of Kikuchi lines as a comparative image after tilting the moving mechanism by a first angle.
  • the error of the tilt angle and the target tilt angle of the sample is evaluated using the reference image of the reference diffraction pattern and the comparison image, and the tilt of the moving mechanism is adjusted based on the result of the evaluation.
  • FIG. It is a figure which shows an example of the structure of the transmission electron microscope (TEM) of Example 1. It is a flowchart explaining the sample stage adjustment process performed by TEM of Example 1.
  • FIG. It is a figure which shows an example of the image of the diffraction pattern acquired by the TEM of Example 1. It is a figure which shows an example of the image of the diffraction pattern acquired by the TEM of Example 1. It is a figure which shows an example of the image of the diffraction pattern acquired by the TEM of Example 1. It is a figure which shows an example of the image of the diffraction pattern acquired by the TEM of Example 1. It is a graph which shows the relationship between the inclination angle of the sample stage of Example 1 and the shift amount of a diffraction pattern.
  • FIG. 1 is a diagram showing an example of the configuration of a transmission electron microscope (TEM: Transmission Electron Microscope) of Example 1.
  • TEM Transmission Electron Microscope
  • the TEM100 is composed of an electro-optical lens barrel 101 and a control unit 102.
  • the electron optical system lens barrel 101 includes an electron source 111, a first and second condenser lens 112, a condenser diaphragm 113, an axis misalignment correction deflector 114, a stigmeter 115, an image shift deflector 116, an objective lens 117, and a sample stage. It has 118, an intermediate lens 119, a projection lens 120, and a CCD camera 121. When the above-mentioned device included in the electron optics lens barrel 101 is not distinguished, it is also described as a target device.
  • the sample stage 118 holds the sample 122.
  • the sample 122 may be held by a sample holder fixed to the sample stage 118.
  • the sample stage 118, the sample holder, or a combination thereof is an example of a moving mechanism that realizes holding and moving of the sample 122.
  • the movement of the sample stage 118 includes tilt movement, shift movement, rotational movement, and the like.
  • the sample stage 118 can be tilted on one or more tilt axes (rotational axes).
  • the electron beam emitted from the electron source 111 which is a particle source, is reduced by the first and second capacitor lenses 112, and the emission angle is limited by the capacitor diaphragm 113. Further, the electron beam is irradiated in a direction parallel to the sample 122 by the magnetic field in front of the objective lens 117 after the axis adjustment is performed by the axis deviation correction deflector 114, the stigmeter 115, and the image shift deflector 116. To.
  • the first and second condenser lenses 112, the condenser diaphragm 113, the deflector 114 for axis misalignment correction, the stigmeter 115, the deflector 116 for image shift, the objective lens 117, the sample stage 118, the intermediate lens 119, and the projection lens 120 are This is an example of an optical element that adjusts the direction and focus of an electron beam with respect to the sample 122.
  • the diffraction pattern (diffraction figure) is formed on the rear focal plane located between the objective lens 117 and the intermediate lens 119 due to the influence of the rear magnetic field of the objective lens 117. Further, the diffraction pattern is magnified by the intermediate lens 119 and the projection lens 120, and is detected by the CCD camera 121.
  • the CCD camera 121 is an example of a detector that detects a signal emitted from a sample 122 irradiated with an electron beam.
  • the computer which is the control unit 102, controls the electron optics lens barrel 101 by using a plurality of control circuits.
  • the control unit 102 includes an electron gun control circuit 151, an irradiation lens control circuit 152, a condenser aperture control circuit 153, an axis misalignment correction deflector control circuit 154, a stigmeter control circuit 155, an image shift deflector control circuit 156, and an objective lens. It includes a control circuit 157, a sample stage control circuit 158, an intermediate lens control circuit 159, a projection lens control circuit 160, and a CCD camera control circuit 161.
  • the control unit 102 acquires the value of each target device via each control circuit, and creates an arbitrary electron optics condition by inputting a value to each target device via each control circuit.
  • the control unit 102 is an example of a control mechanism that realizes control of the electron optics lens barrel 101.
  • control unit 102 adjusts the inclination angle of the sample stage 118 by using a diffraction pattern including a plurality of Kikuchi lines instead of the diffraction pattern including the diffraction spot.
  • the irradiation angle also referred to as an opening angle
  • the diffraction spot when acquired by the detector is also widened, and it becomes difficult to separate the spot positions because they overlap with the adjacent spots.
  • the irradiation angle of the primary electron beam can be larger than 30 mrad, so that there is no limitation on the electron beam as described above.
  • the diffraction pattern including the Kikuchi pattern has a characteristic of having a continuous intensity distribution in the diffraction space.
  • the control unit 102 includes a processor 171, a main storage device 172, an auxiliary storage device 173, an input device 174, an output device 175, and a network interface 176. Each device is connected to each other via a bus.
  • the processor 171 executes a program stored in the main storage device 172.
  • the processor 171 functions as various functional units by executing processing according to a program.
  • the main storage device 172 is a storage device such as a semiconductor memory, and stores programs and data executed by the processor 171.
  • the main storage device 172 is also used as a work area temporarily used by the program.
  • the main storage device 172 stores, for example, an operating system, a program for controlling the target device of the TEM 100, a program for acquiring an image of the sample 122, a program for processing the acquired image, and the like.
  • the processing when the processing is mainly described by the TEM 100 (control unit 102), it means that the processor 171 that executes one of the programs is executing the processing.
  • the auxiliary storage device 173 is a storage device such as an HDD (Hard Disk Drive) and an SSD (Solid State Drive), and permanently stores data.
  • the programs and data stored in the main storage device 172 may be stored in the auxiliary storage device 173.
  • the processor 171 reads the program and data from the auxiliary storage device 173 and loads them into the main storage device 172 when the control unit 102 is started up or when processing is required.
  • the input device 174 is a device for a user to input instructions and information to the control unit 102, such as a keyboard, a mouse, and a touch panel.
  • the output device 175 is a device such as a display and a printer for outputting an image, an analysis result, and the like to a user.
  • the network interface 176 is an interface for communicating via the network.
  • control unit 102 is described as one computer in FIG. 1, the control unit 102 may be configured by using a plurality of computers. The function of the control unit 102 may be realized by using a logic circuit.
  • the configuration and processing described in the first embodiment can be applied to a charged particle beam device other than the TEM100.
  • a charged particle beam device other than the TEM100.
  • it can be applied to a scanning transmission electron microscope (STEM), a scanning electron microscope (SEM) for detecting secondary electrons and backscattered electrons, and an apparatus using charged particles different from electrons.
  • STEM scanning transmission electron microscope
  • SEM scanning electron microscope
  • the STEM irradiates the sample 122 with a converged electron beam, and scans the converged electron beam using a deflection coil such as an image shift deflector 116.
  • a deflection coil such as an image shift deflector 116.
  • FIG. 2 is a flowchart illustrating the sample stage adjustment process executed by the TEM100 of the first embodiment.
  • 3A, 3B, and 3C are diagrams showing an example of an image of the diffraction pattern acquired by the TEM100 of Example 1.
  • FIG. 4 is a graph showing the relationship between the inclination angle of the sample stage 118 of Example 1 and the shift amount of the diffraction pattern.
  • FIG. 5 is a diagram showing the geometrical relationship between the inclination angle of the sample stage 118 of Example 1 of Example 1 and the shift amount of the diffraction pattern.
  • 6A and 6B are graphs showing the relationship between the inclination angle of the sample stage 118 and the inclination angle of the sample 122 of the first embodiment.
  • FIG. 2 describes a process for automatically adjusting the sample stage 118 so that the TEM 100 automatically has an inclination angle (target inclination angle) of a predetermined sample 122 on one inclination axis. It is assumed that the sample 122 is present near the center of the visual field at the start of the treatment.
  • the control unit 102 sets observation conditions such as an acceleration voltage and an irradiation current in the electron optics lens barrel 101 (step S101).
  • the control unit 102 sets the target inclination angle ⁇ of the sample 122 for acquiring an image with a desired resolution as an observation condition.
  • the target inclination angle ⁇ is predetermined.
  • the control unit 102 sets a target inclination angle at the inclination angle ⁇ , which is a parameter for adjusting the inclination of the sample stage 118.
  • control unit 102 adjusts the contrast, focus, and position of the sample 122 so that the image of the sample 122 becomes clear (step S102). Specifically, the following processing is executed.
  • the control unit 102 adjusts the objective lens current value flowing through the objective lens 117 so that the image of the sample 122 becomes clear by transmitting a signal to the objective lens control circuit 157.
  • the objective lens current value flowing through the objective lens 117 changes from the reference objective lens current value IA (reference objective lens current value IA) set in the electron optics lens barrel 101.
  • control unit 102 obtains a height at which the image of the sample 122 becomes clear with the reference objective lens current value IA from the difference between the objective lens current value IB and the reference objective lens current value IA.
  • the sample height H1 after adjustment can be obtained from the equation (1).
  • A is a coefficient calculated from the relationship between the current value of the objective lens and the height of the sample in focus, and the unit is "um / A".
  • the sample height H1 can be calculated from the difference between the objective lens current value IB and the reference objective lens current value IA after the focus is adjusted.
  • the control unit 102 adjusts the sample height of the sample stage 118 based on the sample height H1 via the sample stage control circuit 158. By adjusting the sample height, a clear image of the sample 122 can be observed with the reference objective lens current value IA of the TEM100.
  • the above is the description of the process of step S102.
  • the control unit 102 defocuses by adjusting the objective lens current value (step S103). This is an operation for acquiring an image (diffraction pattern) including the Kumamoto line.
  • the amount of defocus adjustment differs depending on the conditions of the electron optics lens barrel 101 and the irradiation system. For example, the amount of defocus adjustment that makes it easy to clearly observe the Kumamoto line is about 5 um to 50 um, but the present patent can be applied even if the defocus is 50 um or more.
  • control unit 102 adjusts the objective lens current value from the reference objective lens current value IA by the amount of defocus adjustment using the coefficient A.
  • the adjusted objective lens current amount IC can be obtained from the equation (2).
  • D represents the amount of defocus.
  • the defocusing method may be either. ..
  • Example 1 the inclination angle of the sample 122 is calculated by using the diffraction pattern including the Kikuchi line caused by multiple scattering.
  • TEM100 for recording the Kumamoto line
  • a diffraction pattern obtained by injecting an electron beam having a large opening angle (for example, about several hundred quads) into a sample is used. Even if the opening angle of the primary beam with respect to the sample 122 is about 20 mrad, the same diffraction pattern may be obtained by adjusting the image processing parameters.
  • the above-mentioned opening angle assumes an accelerating voltage of about 200 kV, but when the accelerating voltage is low, the scattering angle changes according to the wavelength of the primary beam, so the primary beam required to obtain a diffraction pattern of the same degree.
  • the opening angle of is small.
  • the parameter obtained by dividing the opening angle ⁇ by the wavelength ⁇ may be adjusted to be constant. This is an approximation of Bragg's law, and more accurately it is a parameter obtained by dividing sin ⁇ by the wavelength ⁇ . When using it as a parameter, the result is the same even if the reciprocal (wavelength ⁇ is divided by the opening angle ⁇ ) is used.
  • the acceleration voltage is 200 kV and the wavelength is 200 mrad
  • the wavelength is 2.5 pm
  • it becomes 4.8 pm
  • the opening angle of the 200 kV primary beam irradiating the sample is 30 mrad, it is 57.6 mrad.
  • control unit 102 acquires an image A (reference image) of a diffraction pattern including a plurality of Kumamoto lines (step S104).
  • image A reference image
  • the diffraction pattern projected on the acquired image A will also be referred to as diffraction pattern A.
  • the control unit 102 acquires an image of the diffraction pattern by transmitting the recording signal to the CCD camera 121 via the CCD camera control circuit 161. For example, an image 300 of a diffraction pattern as shown in FIG. 3A is acquired.
  • the straight line 301 included in the image 300 is the Kumamoto line. In this way, the diffraction pattern including the plurality of Kumamoto lines is projected on the image 300.
  • the TEM 100 may irradiate an electron beam fixed at a specific position of the sample 122, or control an image shift deflector 116 or the like to control a part region of the sample 122. You may irradiate the electron beam so as to scan. By irradiating the electron beam so as to scan a part of the sample 122, the effect of sharpening the contrast of the image can be expected.
  • control unit 102 acquires the image B (comparison image) of the diffraction pattern after moving the sample stage 118 (step S105) (step S106).
  • image B comparison image
  • the diffraction pattern projected on the acquired image B is also described as the diffraction pattern B.
  • control unit 102 moves (rotates) the sample stage 118 by transmitting a signal to the sample stage control circuit 158 based on the inclination angle ⁇ . After moving the sample stage 118, the control unit 102 acquires an image 310 in which the diffraction pattern as shown in FIG. 3B is projected.
  • control unit 102 calculates the shift amount S of the diffraction pattern using the diffraction pattern A and the diffraction pattern B (step S107).
  • the control unit 102 compares the diffraction pattern A and the diffraction pattern B, and calculates the shift amount of the diffraction pattern from the correlation value by the correlation function.
  • FIG. 4 is an example of a graph showing the relationship between the tilt angle and the shift amount when the sample stage 118 is tilted twice.
  • the shift amount is generally calculated as the number of moving pixels having the maximum correlation value. However, the shift amount may be calculated as a change in the feature amount by image matching or the like.
  • the shift amount of the diffraction pattern can be calculated.
  • control unit 102 calculates the inclination angle ⁇ of the sample 122 using the shift amount S of the diffraction pattern (step S108).
  • the inclination angle ⁇ of the sample 122 can be obtained from the camera length L and the shift amount S by the equation (3).
  • the camera length L can be calculated by analyzing the diffraction pattern of the sample 122 having a known structure.
  • control unit 102 determines whether or not the inclination angle ⁇ of the sample 122 matches the target inclination angle ⁇ (step S109).
  • an error may occur between the inclination angle ⁇ of the sample 122 and the target inclination angle ⁇ due to the inclination accuracy of the sample stage 118. If an error occurs, the control unit 102 determines that the inclination of the sample stage 118 needs to be adjusted.
  • control unit 102 may determine that the tilt angle ⁇ of the sample 122 matches the target tilt angle ⁇ .
  • the control unit 102 ends the sample stage adjustment process. After the processing is completed, the control unit 102 executes processing such as observation of the sample 122. When observing the sample 122, the observation conditions can be used as they are.
  • step S110 the control unit 102 adds a value obtained by adding the difference between the target inclination angle ⁇ and the inclination angle ⁇ of the sample 122 to the current inclination angle ⁇ .
  • a new inclination angle ⁇ is set (step S110), and then the process returns to step S105.
  • step S106 the image 320 on which the diffraction pattern as shown in FIG. 3C is projected is acquired.
  • control unit 102 can automatically adjust the inclination of the sample stage 118 so that the inclination angle ⁇ of the sample 122 matches the target inclination angle ⁇ .
  • the control unit 102 calculates the inclination angle of the sample 122 with respect to each inclination axis based on the shift amount in the two-dimensional plane (xy plane), and the error between the target inclination angle of each inclination axis and the inclination angle of the sample 122. Adjust the tilt of the sample stage 118 based on.
  • the control unit 102 can automatically and highly accurately adjust the inclination of the sample stage 118 by performing an analysis using a diffraction pattern including the Kumamoto line.
  • the inclination of the sample 122 that is, the crystal orientation of the sample 122 can be adjusted in a desired direction automatically and with high accuracy.
  • the user does not need to refer to the diffraction pattern, and the crystal structure of the sample may be unknown in advance.
  • control unit 102 generates an image of the target diffraction pattern from the image of the diffraction pattern A and the target tilt angle ⁇ , and tilts the sample stage 118 based on the shift amount of the target diffraction pattern and the diffraction pattern B. adjust.
  • Example 2 will be described with a focus on the differences from Example 1.
  • Example 2 The configuration of TEM100 in Example 2 is the same as that in Example 1. In Example 2, the sample stage adjustment process is different.
  • FIG. 7 is a graph showing the relationship between the inclination angle of the sample stage 118 of Example 2 and the correlation value of the target diffraction pattern and the diffraction pattern B.
  • FIG. 8 is a graph showing the relationship between the inclination angle of the sample stage 118 of Example 2 and the error of the inclination angle ⁇ and the target inclination angle ⁇ of the sample 122.
  • FIG. 9 is a flowchart illustrating the sample stage adjustment process executed by the TEM100 of the second embodiment.
  • FIG. 10A is a diagram showing an example of an image of a diffraction pattern acquired by TEM100 of Example 2.
  • FIG. 10B is a diagram showing an example of an image of the target diffraction pattern generated by the TEM100 of Example 2.
  • step S101 to step S104 is the same as the processing of Example 1.
  • the image A of the diffraction pattern is acquired as a processing image.
  • the control unit 102 After the process of step S104 is executed, the control unit 102 generates an image (reference image) of the target diffraction pattern based on the image of the diffraction pattern A and the target inclination angle ⁇ (step S201).
  • an image 1010 having a target diffraction pattern as shown in FIG. 10B is generated from an image 1000 having a diffraction pattern as shown in FIG. 10A.
  • steps S105 and S106 is the same as the processing of Example 1.
  • the control unit 102 calculates the shift amount S of the diffraction pattern using the target diffraction pattern and the diffraction pattern B (step S202).
  • the method of calculating the shift amount S is the same as that of the first embodiment.
  • control unit 102 determines whether or not the shift amount S of the diffraction pattern is 0 (step S203). That is, it is determined whether or not the error between the inclination angle ⁇ and the target inclination angle ⁇ of the sample 122 is minimized.
  • the control unit 102 ends the sample stage adjustment process.
  • control unit 102 sets the shift amount S to a new inclination angle ⁇ (step S204), and then returns to step S105.
  • the control unit 102 desires the crystal orientation of the sample 122 automatically and with high accuracy by performing the analysis using the diffraction pattern including the Kumamoto line. It can be adjusted in the direction. Further, in the second embodiment, since it is not necessary to calculate the inclination angle of the sample 122, the processing cost can be reduced and the processing speed can be increased.
  • the shift amount of the diffraction pattern also increases as the sample stage 118 moves. Therefore, there may be no correlation between the diffraction pattern before movement and the diffraction pattern before movement. In this case, the shift amount of the diffraction pattern cannot be calculated even if the two diffraction patterns are compared.
  • the inclination of the sample stage 118 can be adjusted automatically and with high accuracy even when the target inclination angle ⁇ is large.
  • the third embodiment will be described with a focus on the differences from the first embodiment.
  • Example 3 The configuration of TEM100 in Example 3 is the same as that in Example 1. In Example 3, the sample stage adjustment process is different.
  • FIG. 11 is a flowchart illustrating the sample stage adjustment process executed by the TEM100 of the third embodiment.
  • FIG. 12 is a diagram showing an example of a series of images of diffraction patterns acquired by TEM100 of Example 3.
  • FIG. 13 is a diagram showing an example of the relationship between the inclination angle and the shift amount of the sample stage 118 of the third embodiment.
  • control unit 102 sets observation conditions such as an acceleration voltage and an irradiation current in the electron optics lens barrel 101 (step S301).
  • step S301 the step inclination angle ⁇ is set at the inclination angle ⁇ .
  • Other processes are the same as in step S101.
  • the step inclination angle ⁇ is an angle smaller than the target inclination angle and is preset as a default value.
  • the step inclination angle ⁇ can be updated as described later.
  • steps S102 to S104 is the same as the processing of the first embodiment.
  • the control unit 102 moves the sample stage 118 (step S302) and then acquires the image B of the diffraction pattern (step S106).
  • control unit 102 moves the sample stage 118 by transmitting a signal to the sample stage control circuit 158 based on the inclination angle ⁇ .
  • the process of step S106 is the same as that of the first embodiment.
  • the control unit 102 stores the acquired image of the diffraction pattern B in the main storage device 172. Therefore, the main storage device 172 stores a series of images of the diffraction pattern B as shown in FIG.
  • control unit 102 calculates the shift amount S of the diffraction pattern using the series of the diffraction pattern A and the diffraction pattern B (step S303).
  • control unit 102 generates a pair of diffraction patterns before and after the adjustment of the sample stage 118 based on the inclination angle ⁇ , and calculates the shift amount between the pairs.
  • the method of calculating the shift amount of the diffraction pattern is the same as that of the first embodiment.
  • the control unit 102 calculates the total value of the shift amounts of each pair as the shift amount S of the diffraction pattern.
  • the control unit 102 may store the processing result of step S303 in the main storage device 172.
  • FIG. 13 shows the shift amount on the two-dimensional plane. In this case, the shift amount between the pairs is given as the square root of the sum of the squares of the shift amounts in the x direction and the squares of the shift amounts in the y direction.
  • step S303 When the processing result of step S303 is stored in the main storage device 172, the control unit 102 adds the shift amount S of the previous diffraction pattern to the shift amount between the latest diffraction pattern B and the previous diffraction pattern B. Is calculated as the shift amount S of the new diffraction pattern.
  • steps S108 and S109 are the same as that of the first embodiment.
  • the control unit 102 determines that the absolute value of the difference between the target inclination angle ⁇ and the inclination angle ⁇ of the sample 122 is the step inclination angle ⁇ . It is determined whether or not it is smaller (step S304).
  • step S306 When it is determined that the absolute value of the difference between the target inclination angle ⁇ and the inclination angle ⁇ of the sample 122 is equal to or greater than the step inclination angle ⁇ , the control unit 102 proceeds to step S306.
  • the control unit 102 sets the absolute value of the difference between the target inclination angle ⁇ and the inclination angle ⁇ of the sample 122. Is set as a new step inclination angle ⁇ (step S305), and then the process proceeds to step S306.
  • step S306 the control unit 102 sets a new inclination angle ⁇ by adding the step inclination angle ⁇ to the current inclination angle ⁇ (step S306), and then returns to step S302.
  • the control unit 102 can calculate the shift amount S of the diffraction pattern when the sample stage 118 is greatly tilted by gradually changing the tilt of the sample stage 118. Further, the adjustment accuracy of the inclination of the sample stage 118 can be improved by updating the step inclination angle ⁇ according to the error between the target inclination angle ⁇ and the inclination angle ⁇ of the sample 122.
  • the crystal orientation of the sample 122 can be adjusted to a desired direction automatically and with high accuracy even when the target inclination angle ⁇ is large.
  • control unit 102 adjusts the setting of the TEM 100 so that a clear diffraction pattern can be acquired after the sample stage 118 is moved.
  • Example 4 will be described with a focus on the differences from Example 1.
  • Example 4 The configuration of TEM100 in Example 4 is the same as that in Example 1. In Example 4, the sample stage adjustment process is different.
  • FIG. 14 is a flowchart illustrating the sample stage adjustment process executed by the TEM100 of the fourth embodiment.
  • control unit 102 sets observation conditions such as an acceleration voltage and an irradiation current in the electron optics lens barrel 101 (step S401).
  • step S401 the step inclination angle ⁇ is set at the inclination angle ⁇ .
  • Other processes are the same as in step S101.
  • the step inclination angle ⁇ is an angle smaller than the target inclination angle and is preset as a default value.
  • the step inclination angle ⁇ can be updated as described later.
  • steps S102 to S104 is the same as the processing of the first embodiment.
  • the control unit 102 moves the sample stage 118 (step S402), and then adjusts and defocuses the sample position (step S403, step S404). After that, the control unit 102 acquires the image B of the diffraction pattern (step S106).
  • step S402 the control unit 102 moves the sample stage 118 by transmitting a signal to the sample stage control circuit 158 based on the inclination angle ⁇ .
  • step S403 the control unit 102 moves the sample stage 118 so as to correct the deviation in the height of the sample 122 as the sample stage 118 is tilted.
  • step S404 is the same process as step S103.
  • step S106 the control unit 102 temporarily stores the image of the diffraction pattern B in the main storage device 172.
  • the main storage device 172 stores a series of images of the diffraction pattern B.
  • control unit 102 calculates the shift amount S of the diffraction pattern using the series of the diffraction pattern A and the diffraction pattern B (step S405).
  • control unit 102 generates a pair of diffraction patterns before and after the adjustment of the sample stage 118 based on the inclination angle ⁇ , and calculates the shift amount for the pair.
  • the method of calculating the shift amount of the diffraction pattern is the same as that of the first embodiment.
  • the control unit 102 calculates the total value of the shift amounts of each pair as the shift amount S of the diffraction pattern.
  • control unit 102 may store the processing result of step S405 in the main storage device 172. In this case, the control unit 102 calculates a value obtained by adding the shift amount S of the previous diffraction pattern to the shift amount of the latest diffraction pattern B and the previous diffraction pattern B as the shift amount S of the new diffraction pattern. To do.
  • steps S108 and S109 are the same as that of the first embodiment.
  • the control unit 102 determines that the absolute value of the difference between the target inclination angle ⁇ and the inclination angle ⁇ of the sample 122 is the step inclination angle ⁇ . It is determined whether or not it is smaller (step S406).
  • step S408 When it is determined that the absolute value of the difference between the target inclination angle ⁇ and the inclination angle ⁇ of the sample 122 is equal to or greater than the step inclination angle ⁇ , the control unit 102 proceeds to step S408.
  • the control unit 102 sets the absolute value of the difference between the target inclination angle ⁇ and the inclination angle ⁇ of the sample 122. Is set as a new step inclination angle ⁇ (step S407), and then the process proceeds to step S408.
  • step S408 the control unit 102 sets a new inclination angle ⁇ by adding the step inclination angle ⁇ to the current inclination angle ⁇ (step S408), and then returns to step S402.
  • the control unit 102 can calculate the shift amount S of the diffraction pattern when the sample stage 118 is greatly tilted by gradually changing the tilt of the sample stage 118. Further, the adjustment accuracy of the inclination of the sample stage 118 can be improved by updating the step inclination angle ⁇ according to the error between the target inclination angle ⁇ and the inclination angle ⁇ of the sample 122. Further, the control unit 102 can acquire a clear diffraction pattern by adjusting the position of the sample stage 118 after moving the sample stage 118 and performing defocusing again.
  • control unit 102 may acquire an image of the sample 122 after the processing of step S102 and after the processing of step S402.
  • FIG. 15 is a diagram showing an example of the screen 1500 displayed by the TEM 100 of the fourth embodiment.
  • the screen 1500 includes four display fields 1501, 1502, 1503, 1504.
  • the display column 1501 is a column for displaying information such as the state of the TEM 100 before the start of the sample stage adjustment process.
  • the display column 1501 includes an image 1511 of the sample 122, an image 1512 of the diffraction pattern, and a parameter column 1513 indicating the state of the sample stage 118.
  • the display column 1502 is a column for displaying information such as the state of the TEM 100 after the completion of the sample stage adjustment process.
  • the display column 1502 includes an image 1521 of the sample 122, an image 1522 of the diffraction pattern, and a parameter column 1523 indicating the state of the sample stage 118.
  • the display column 1503 is a column for displaying information on the diffraction pattern used when calculating the shift amount S.
  • the display field 1503 includes a map image 1531 generated from the series of diffraction patterns used when calculating the shift amount, and a calculated value field 1532 for displaying the shift amount, the inclination angle of the sample stage 118, and the like.
  • the display column 1504 is a column for displaying the history of the shift amount S and the inclination angle ⁇ of the sample 122.
  • the display field 1504 includes a graph 1541 that displays the history of the shift amount S and a graph 1542 that displays the history of the inclination angle ⁇ of the sample 122.
  • the user can confirm the adjustment result of the sample stage 118 and the image of the sample 122 by referring to the screen 1500.
  • the crystal orientation of the sample 122 can be adjusted to a desired direction automatically and with high accuracy even when the target inclination angle is large. Further, by adjusting the setting of the TEM 100 after moving the sample stage 118, a clear diffraction pattern can be obtained.
  • the present invention is not limited to the above-mentioned examples, and includes various modifications.
  • the above-described embodiment describes the configuration in detail in order to explain the present invention in an easy-to-understand manner, and is not necessarily limited to the one including all the described configurations. Further, it is possible to add, delete, or replace a part of the configuration of each embodiment with other configurations.
  • each of the above configurations, functions, processing units, processing means, etc. may be realized by hardware by designing a part or all of them by, for example, an integrated circuit.
  • the present invention can also be realized by a program code of software that realizes the functions of the examples.
  • a storage medium in which the program code is recorded is provided to the computer, and the processor included in the computer reads the program code stored in the storage medium.
  • the program code itself read from the storage medium realizes the functions of the above-described embodiment, and the program code itself and the storage medium storing the program code itself constitute the present invention.
  • Examples of the storage medium for supplying such a program code include a flexible disk, a CD-ROM, a DVD-ROM, a hard disk, an SSD (Solid State Drive), an optical disk, a magneto-optical disk, a CD-R, and a magnetic tape.
  • Non-volatile memory cards, ROMs, etc. are used.
  • program code that realizes the functions described in this embodiment can be implemented in a wide range of programs or script languages such as assembler, C / C ++, perl, Shell, PHP, Python, and Java.
  • the program code of the software that realizes the functions of the examples via the network it is stored in a storage means such as a hard disk or memory of a computer or a storage medium such as a CD-RW or a CD-R.
  • the processor provided in the computer may read and execute the program code stored in the storage means or the storage medium.
  • control lines and information lines indicate those considered necessary for explanation, and do not necessarily indicate all the control lines and information lines in the product. All configurations may be interconnected.

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FR3103897B1 (fr) * 2019-12-02 2022-04-01 Safran Dispositif et procédé de mesure des angles d’orientation d’un système d’imagerie x
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH076725A (ja) * 1993-06-21 1995-01-10 Hitachi Ltd 組成及び格子歪測定用電子顕微鏡及びその観察方法
JPH08106873A (ja) * 1994-10-04 1996-04-23 Hitachi Ltd 電子顕微鏡装置
JP2009110734A (ja) * 2007-10-29 2009-05-21 Hitachi High-Technologies Corp 荷電粒子線顕微装置及び顕微方法
JP2010092625A (ja) * 2008-10-03 2010-04-22 Fujitsu Ltd 電子線装置及びその補正方法、並びに補正用基板
WO2016084872A1 (ja) * 2014-11-28 2016-06-02 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US20170309441A1 (en) * 2016-04-21 2017-10-26 Fei Company System for orienting a sample using a diffraction pattern
JP2018092805A (ja) * 2016-12-05 2018-06-14 日本電子株式会社 画像取得方法および電子顕微鏡
WO2018221636A1 (ja) * 2017-05-31 2018-12-06 新日鐵住金株式会社 傾斜角度量算出装置、試料台、荷電粒子線装置およびプログラム

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9103769B2 (en) * 2009-12-15 2015-08-11 The Regents Of The University Of California Apparatus and methods for controlling electron microscope stages
US8841613B2 (en) * 2010-05-20 2014-09-23 California Institute Of Technology Method and system for 4D tomography and ultrafast scanning electron microscopy
JP6261178B2 (ja) * 2013-03-27 2018-01-17 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、荷電粒子ビーム装置を用いた試料の加工方法、及び荷電粒子ビーム装置を用いた試料の加工コンピュータプログラム
US9754762B2 (en) * 2014-07-07 2017-09-05 Hitachi High-Technologies Corporation Electron microscope and sample observation method
EP2991098A1 (en) * 2014-08-25 2016-03-02 Fei Company Method of acquiring EBSP patterns
US9859091B1 (en) * 2016-06-20 2018-01-02 International Business Machines Corporation Automatic alignment for high throughput electron channeling contrast imaging
JP6606706B2 (ja) * 2016-06-24 2019-11-20 株式会社リガク 処理方法、処理装置および処理プログラム
US9905394B1 (en) * 2017-02-16 2018-02-27 Carl Zeiss Microscopy Gmbh Method for analyzing an object and a charged particle beam device for carrying out this method
JP6823563B2 (ja) * 2017-07-31 2021-02-03 株式会社日立製作所 走査電子顕微鏡および画像処理装置
JP2019191168A (ja) * 2018-04-23 2019-10-31 ブルカー ジェイヴィ イスラエル リミテッドＢｒｕｋｅｒ Ｊｖ Ｉｓｒａｅｌ Ｌｔｄ． 小角ｘ線散乱測定用のｘ線源光学系
US10784076B2 (en) * 2018-07-05 2020-09-22 Fei Company 3D defect characterization of crystalline samples in a scanning type electron microscope
US11756764B2 (en) * 2019-04-23 2023-09-12 Hitachi High-Tech Corporation Charged particle beam apparatus and method of controlling charged particle beam apparatus
WO2020235091A1 (ja) * 2019-05-23 2020-11-26 株式会社日立ハイテク 荷電粒子線装置及び荷電粒子線装置の制御方法
DE102020203580B4 (de) * 2020-03-20 2021-10-07 Carl Zeiss Microscopy Gmbh Verfahren zum Ändern der Raum-Orientierung einer Mikroprobe in einem Mikroskop-System, sowie Computerprogrammprodukt
US11195693B1 (en) * 2020-05-29 2021-12-07 Fei Company Method and system for dynamic band contrast imaging
US11650171B2 (en) * 2021-06-24 2023-05-16 Fei Company Offcut angle determination using electron channeling patterns

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH076725A (ja) * 1993-06-21 1995-01-10 Hitachi Ltd 組成及び格子歪測定用電子顕微鏡及びその観察方法
JPH08106873A (ja) * 1994-10-04 1996-04-23 Hitachi Ltd 電子顕微鏡装置
JP2009110734A (ja) * 2007-10-29 2009-05-21 Hitachi High-Technologies Corp 荷電粒子線顕微装置及び顕微方法
JP2010092625A (ja) * 2008-10-03 2010-04-22 Fujitsu Ltd 電子線装置及びその補正方法、並びに補正用基板
WO2016084872A1 (ja) * 2014-11-28 2016-06-02 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US20170309441A1 (en) * 2016-04-21 2017-10-26 Fei Company System for orienting a sample using a diffraction pattern
JP2018092805A (ja) * 2016-12-05 2018-06-14 日本電子株式会社 画像取得方法および電子顕微鏡
WO2018221636A1 (ja) * 2017-05-31 2018-12-06 新日鐵住金株式会社 傾斜角度量算出装置、試料台、荷電粒子線装置およびプログラム

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