JP7168777B2 - 荷電粒子線装置及び荷電粒子線装置の制御方法 - Google Patents

荷電粒子線装置及び荷電粒子線装置の制御方法 Download PDF

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JP7168777B2
JP7168777B2 JP2021520016A JP2021520016A JP7168777B2 JP 7168777 B2 JP7168777 B2 JP 7168777B2 JP 2021520016 A JP2021520016 A JP 2021520016A JP 2021520016 A JP2021520016 A JP 2021520016A JP 7168777 B2 JP7168777 B2 JP 7168777B2
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particle beam
charged particle
sample
image
diffraction pattern
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高志 土橋
央和 玉置
大海 三瀬
峻大郎 伊藤
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Hitachi High Tech Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20058—Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/2055—Analysing diffraction patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
    • G01N2223/056—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction
    • G01N2223/0566—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction analysing diffraction pattern
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/30—Accessories, mechanical or electrical features
    • G01N2223/303—Accessories, mechanical or electrical features calibrating, standardising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2802—Transmission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Engineering & Computer Science (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2021520016A 2019-05-23 2019-05-23 荷電粒子線装置及び荷電粒子線装置の制御方法 Active JP7168777B2 (ja)

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PCT/JP2019/020503 WO2020235091A1 (ja) 2019-05-23 2019-05-23 荷電粒子線装置及び荷電粒子線装置の制御方法

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Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
WO2020235091A1 (ja) * 2019-05-23 2020-11-26 株式会社日立ハイテク 荷電粒子線装置及び荷電粒子線装置の制御方法
FR3103897B1 (fr) * 2019-12-02 2022-04-01 Safran Dispositif et procédé de mesure des angles d’orientation d’un système d’imagerie x
JP2024134459A (ja) * 2023-03-20 2024-10-03 キオクシア株式会社 電子顕微鏡、及び、結晶評価方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009110734A (ja) 2007-10-29 2009-05-21 Hitachi High-Technologies Corp 荷電粒子線顕微装置及び顕微方法
JP2010092625A (ja) 2008-10-03 2010-04-22 Fujitsu Ltd 電子線装置及びその補正方法、並びに補正用基板
WO2016084872A1 (ja) 2014-11-28 2016-06-02 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US20170309441A1 (en) 2016-04-21 2017-10-26 Fei Company System for orienting a sample using a diffraction pattern
JP2018092805A (ja) 2016-12-05 2018-06-14 日本電子株式会社 画像取得方法および電子顕微鏡
WO2018221636A1 (ja) 2017-05-31 2018-12-06 新日鐵住金株式会社 傾斜角度量算出装置、試料台、荷電粒子線装置およびプログラム

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JP3422045B2 (ja) * 1993-06-21 2003-06-30 株式会社日立製作所 組成及び格子歪測定用電子顕微鏡及びその観察方法
JPH08106873A (ja) * 1994-10-04 1996-04-23 Hitachi Ltd 電子顕微鏡装置
US9103769B2 (en) * 2009-12-15 2015-08-11 The Regents Of The University Of California Apparatus and methods for controlling electron microscope stages
US8841613B2 (en) * 2010-05-20 2014-09-23 California Institute Of Technology Method and system for 4D tomography and ultrafast scanning electron microscopy
JP6261178B2 (ja) * 2013-03-27 2018-01-17 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、荷電粒子ビーム装置を用いた試料の加工方法、及び荷電粒子ビーム装置を用いた試料の加工コンピュータプログラム
US9754762B2 (en) * 2014-07-07 2017-09-05 Hitachi High-Technologies Corporation Electron microscope and sample observation method
EP2991098A1 (en) * 2014-08-25 2016-03-02 Fei Company Method of acquiring EBSP patterns
US9859091B1 (en) * 2016-06-20 2018-01-02 International Business Machines Corporation Automatic alignment for high throughput electron channeling contrast imaging
JP6606706B2 (ja) * 2016-06-24 2019-11-20 株式会社リガク 処理方法、処理装置および処理プログラム
US9905394B1 (en) * 2017-02-16 2018-02-27 Carl Zeiss Microscopy Gmbh Method for analyzing an object and a charged particle beam device for carrying out this method
JP6823563B2 (ja) * 2017-07-31 2021-02-03 株式会社日立製作所 走査電子顕微鏡および画像処理装置
JP2019191168A (ja) * 2018-04-23 2019-10-31 ブルカー ジェイヴィ イスラエル リミテッドＢｒｕｋｅｒ Ｊｖ Ｉｓｒａｅｌ Ｌｔｄ． 小角ｘ線散乱測定用のｘ線源光学系
US10784076B2 (en) * 2018-07-05 2020-09-22 Fei Company 3D defect characterization of crystalline samples in a scanning type electron microscope
US11756764B2 (en) * 2019-04-23 2023-09-12 Hitachi High-Tech Corporation Charged particle beam apparatus and method of controlling charged particle beam apparatus
WO2020235091A1 (ja) * 2019-05-23 2020-11-26 株式会社日立ハイテク 荷電粒子線装置及び荷電粒子線装置の制御方法
DE102020203580B4 (de) * 2020-03-20 2021-10-07 Carl Zeiss Microscopy Gmbh Verfahren zum Ändern der Raum-Orientierung einer Mikroprobe in einem Mikroskop-System, sowie Computerprogrammprodukt
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Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
JP2009110734A (ja) 2007-10-29 2009-05-21 Hitachi High-Technologies Corp 荷電粒子線顕微装置及び顕微方法
JP2010092625A (ja) 2008-10-03 2010-04-22 Fujitsu Ltd 電子線装置及びその補正方法、並びに補正用基板
WO2016084872A1 (ja) 2014-11-28 2016-06-02 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US20170309441A1 (en) 2016-04-21 2017-10-26 Fei Company System for orienting a sample using a diffraction pattern
JP2018092805A (ja) 2016-12-05 2018-06-14 日本電子株式会社 画像取得方法および電子顕微鏡
WO2018221636A1 (ja) 2017-05-31 2018-12-06 新日鐵住金株式会社 傾斜角度量算出装置、試料台、荷電粒子線装置およびプログラム

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US20220230844A1 (en) 2022-07-21
US11791131B2 (en) 2023-10-17
WO2020235091A1 (ja) 2020-11-26

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