WO2020232938A1 - 一种阵列基板及显示装置 - Google Patents
一种阵列基板及显示装置 Download PDFInfo
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- WO2020232938A1 WO2020232938A1 PCT/CN2019/107652 CN2019107652W WO2020232938A1 WO 2020232938 A1 WO2020232938 A1 WO 2020232938A1 CN 2019107652 W CN2019107652 W CN 2019107652W WO 2020232938 A1 WO2020232938 A1 WO 2020232938A1
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- Prior art keywords
- blind hole
- layer
- array substrate
- area
- thin film
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- 239000000758 substrate Substances 0.000 title claims abstract description 93
- 239000010409 thin film Substances 0.000 claims abstract description 44
- 239000010408 film Substances 0.000 claims description 24
- 238000005538 encapsulation Methods 0.000 claims description 19
- 238000002834 transmittance Methods 0.000 claims description 14
- 239000012780 transparent material Substances 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 84
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
Definitions
- This application relates to the field of display technology, and in particular to an array substrate and a display device.
- OLED(Organic Light-Emitting Diode (Organic Light-Emitting Diode) display device is thin, light, wide viewing angle, active luminescence, continuously adjustable luminous color, low cost, fast response speed, low energy consumption, low driving voltage, wide operating temperature range, production
- OLED(Organic Light-Emitting Diode) display device is thin, light, wide viewing angle, active luminescence, continuously adjustable luminous color, low cost, fast response speed, low energy consumption, low driving voltage, wide operating temperature range, production
- the advantages of simple process, high luminous efficiency and flexible display have been listed as the next generation display technology with great development prospects.
- the present application provides an array substrate and a display device, which can solve the problem of the large aperture of the camera area of the display device of the existing under-screen camera, which affects the screen ratio.
- the present application provides an array substrate, including a base substrate, and a thin film transistor layer, a planarization layer, and a pixel defining layer that are sequentially prepared on the base substrate, and the pixel defining layer is used to define a pixel opening area;
- a camera area is provided in a range of the base substrate corresponding to the display area, and the camera area includes a first blind hole and a wiring area around the first blind hole;
- the second blind holes are correspondingly arranged at positions between two adjacent pixel opening areas, and the second blind holes are distributed in a grid pattern or at intervals.
- a groove is provided on a side surface of the base substrate facing away from the pixel defining layer at a position corresponding to the wiring area, so that the base substrate corresponds to the groove
- the thickness of the position is smaller than the thickness of the remaining positions.
- the organic light-emitting layer is disposed on the array substrate corresponding to the pixel opening area;
- a camera corresponding to the camera area provided on a side of the array substrate that faces away from the organic light-emitting layer
- the first blind hole in the camera area is used for exposing the camera
- the second blind hole in the wiring area is filled with a transparent material for increasing light transmission in the wiring area rate.
- the present application also provides an array substrate, including a base substrate, and a thin film transistor layer, a planarization layer, and a pixel defining layer that are sequentially prepared on the base substrate, and the pixel defining layer is used to define Pixel opening area;
- a camera area is provided in a range of the base substrate corresponding to the display area, and the camera area includes a first blind hole and a wiring area around the first blind hole;
- the first blind hole is used to expose a camera arranged on the back of the base substrate, and a signal wiring and a second blind hole are arranged in the wiring area;
- the second blind holes are correspondingly arranged at positions between two adjacent pixel opening areas, and the second blind holes are distributed in a grid pattern or at intervals.
- the second blind hole penetrates or partially penetrates one or more of the pixel defining layer, the planarization layer, and the thin film transistor layer.
- the thin film transistor layer includes a laminated inorganic film layer and thin film transistors distributed at intervals, and the second blind holes are arranged corresponding to the space between two adjacent thin film transistors.
- the second blind hole is separated from the signal wiring and the thin film transistor by the inorganic film layer and/or the organic film layer.
- the groove is provided corresponding to the position of the second blind hole, and the groove extends along the extending direction of the second blind hole.
- FIG. 2 is a schematic diagram of signal routing in the routing area of the array substrate provided by an embodiment of the application;
- FIG. 3 is a cross-sectional view of a wiring area of an array substrate provided by an embodiment of the application.
- the peripheral wiring area 22, the first blind hole 21 is used to expose a camera (not shown) arranged on the back of the array substrate, and the wiring area 22 is provided with signal wiring and a second blind hole ;
- the second blind hole avoids the signal wiring settings, the second blind hole is hollowed out or filled with a transparent material design, thereby increasing the light transmittance of the wiring area 22, so that The opaque area of the camera area 20 is reduced, thereby increasing the screen-to-body ratio.
- FIG. 2 is a schematic diagram of signal wiring in the wiring area of the array substrate provided by an embodiment of the application.
- the signal wiring 220 on the array substrate needs to bypass the first blind hole.
- the holes 21 are arranged, thereby forming the wiring area 22 for wiring on the periphery of the first blind hole 21.
- the signal trace 220 includes a first signal trace 221 that bypasses the first blind hole 21 and extends in a first direction, and a first signal trace 221 that bypasses the first blind hole 21 and extends in a second direction.
- the second signal trace 222 is insulated from each other.
- the first signal wiring 221 includes but is not limited to a data line
- the second signal wiring 222 includes but is not limited to a scan line.
- the array substrate includes: a base substrate 101, which includes but is not limited to a polyimide film; and a barrier layer 102, a buffer layer 103, and a thin film transistor layer which are sequentially prepared on the base substrate 101 , A planarization layer 107 and a pixel defining layer 108.
- the pixel defining layer 108 is used to define the pixel opening area 111; a patterned spacer 110 is formed on the pixel defining layer 108.
- the thin film transistor layer includes an inorganic film layer stacked in sequence and thin film transistors 113 distributed in the inorganic film layer.
- the inorganic film layer includes but not limited to a first gate insulating layer 104 and a second gate insulating layer.
- a patterned anode 109 is further provided on the array substrate, and the anode 109 is provided corresponding to the pixel opening area 111 and is electrically connected to the drain of the thin film transistor 113.
- the signal wiring 220 and the second blind hole 112 are provided in the wiring area 22, and the second blind hole 112 is arranged to avoid the signal wiring 220,
- the second blind hole 112 is correspondingly disposed at a position between two adjacent pixel opening regions 111, and does not affect the normal arrangement of pixels.
- the second blind holes 112 are located between two adjacent pixel opening regions 111 and are distributed in a grid pattern, wherein the second blind holes 112 may be in a grid It includes one pixel opening area 111, or may include a plurality of pixel opening areas 111, which is not limited here.
- the second blind holes 112 are distributed at intervals between two adjacent pixel opening regions 111, wherein the length and the length of the second blind holes 112 are not adjusted in this embodiment.
- the width is limited, as long as the light transmittance of the wiring area 22 can be increased.
- the second blind hole 112 is separated from the signal wiring 220 and the thin film transistor 113 by the inorganic film layer and/or organic film layer, that is, the second blind hole 112 does not expose the The signal wiring 220 and the thin film transistor 113 ensure the water and oxygen isolation performance at the second blind hole 112.
- the inorganic film layer of the thin film transistor layer provided in this embodiment is a light-transmitting film layer, wherein the light transmittance can be determined according to the actual manufacturing process and material selection. Since the inorganic film layer does not affect the transmission of light, In the figure, the second blind hole 112 penetrates through the pixel defining layer 108 and the planarization layer 107, and the second blind hole 112 is provided at an interval between two adjacent thin film transistors 113. The light passes through the inorganic film layer and exits through the second blind hole 112, thereby increasing the light transmittance of the wiring area 22, thereby reducing the opaque area of the camera area 20. That is to say, originally the positions of the array substrate corresponding to the first blind hole 21 and the wiring area 22 are opaque. With this design, the opaque area of the array substrate is reduced to the first blind hole. The area corresponding to the hole 21 increases the screen-to-body ratio.
- the second blind hole 112 is filled with a transparent material to increase the light transmittance of the wiring area 22. This design is adopted because the light transmittance is not affected on the basis of The second blind hole 112 is filled, thereby facilitating the preparation of subsequent film layers.
- the first blind hole 21 may also be a through hole, which penetrates the entire array substrate, or may only penetrate multiple films on the array substrate. As long as it does not affect the shooting performance of the camera, there is no restriction here.
- the position of the back surface of the base substrate 101 corresponding to the first blind hole 21 can also be thinned, which will not be repeated here.
- the present application also provides a display device including the above-mentioned array substrate.
- the display device further includes: an organic light-emitting layer disposed on the array substrate corresponding to the pixel opening area 111; and a cathode Layer, arranged on the organic light-emitting layer; thin film encapsulation layer, prepared on the surface of the cathode layer; camera assembly, corresponding to the camera area 20 arranged on the side of the array substrate that faces away from the organic light-emitting layer;
- the camera assembly includes a camera; wherein the first blind hole 21 of the camera area 20 is used to leak out the camera, and the second blind hole 112 of the wiring area 22 is filled with a transparent material. To increase the light transmittance of the wiring area 22.
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Abstract
一种阵列基板及显示装置,包括依次制备于衬底基板(101)上的薄膜晶体管层、平坦化层(107)以及像素界定层(108);衬底基板(101)对应于显示区域(10)的范围内设置有摄像头区域(20),摄像头区域(20)包括第一盲孔(21)和走线区域(22);第一盲孔(21)用于露出设置于衬底基板(101)背面的摄像头,走线区域(22)内设置有信号走线(220)和第二盲孔(112),且第二盲孔(112)避开信号走线(220)设置。
Description
本申请涉及显示技术领域,尤其涉及一种阵列基板及显示装置。
OLED(Organic
Light-Emitting Diode,有机发光二极管)显示装置由于具有薄、轻、宽视角、主动发光、发光颜色连续可调、成本低、响应速度快、能耗小、驱动电压低、工作温度范围宽、生产工艺简单、发光效率高及可柔性显示等优点,已被列为极具发展前景的下一代显示技术。
如何提高屏占比从而实现全面屏已成为当下热点,现有设计一般将摄像模组置于屏下,并采用在显示区内开孔露出摄像头的设计,由此来提高屏占比,但是,由于开孔边缘的黑色走线区域无法消除,依然制约着屏占比的提高。
因此,现有技术存在缺陷,急需改进。
本申请提供一种阵列基板及显示装置,能够解决现有屏下摄像头的显示装置的摄像头区域孔径较大,影响屏占比的问题。
为解决上述问题,本申请提供的技术方案如下:
本申请提供一种阵列基板,包括衬底基板,以及依次制备于所述衬底基板上的薄膜晶体管层、平坦化层以及像素界定层,所述像素界定层用于界定出像素开口区;
所述衬底基板对应于显示区域的范围内设置有摄像头区域,所述摄像头区域包括第一盲孔和所述第一盲孔外围的走线区域;
所述第一盲孔用于露出设置于所述衬底基板背面的摄像头,所述走线区域内设置有信号走线和第二盲孔;
其中,所述第二盲孔避开所述信号走线设置,用于增加所述走线区域的光透过率。
在本申请提供的阵列基板中,所述第二盲孔对应设置于相邻两所述像素开口区之间的位置,所述第二盲孔呈网格状分布或间隔分布。
在本申请提供的阵列基板中,所述第二盲孔贯穿或部分贯穿所述像素界定层、所述平坦化层、所述薄膜晶体管层中的一者或一者以上。
在本申请提供的阵列基板中,所述薄膜晶体管层包括层叠的无机膜层以及间隔分布的薄膜晶体管,所述第二盲孔对应相邻两所述薄膜晶体管之间的间隔位置设置。
在本申请提供的阵列基板中,所述第二盲孔与所述信号走线以及所述薄膜晶体管之间以所述无机膜层和/或有机膜层隔开。
在本申请提供的阵列基板中,所述衬底基板背向所述像素界定层的一侧表面在对应所述走线区域的位置设置有凹槽,使得所述衬底基板对应所述凹槽位置的厚度小于其余位置的厚度。
在本申请提供的阵列基板中,所述凹槽对应所述第二盲孔的位置设置,且所述凹槽沿所述第二盲孔的延伸方向延伸。
为解决上述技术问题,本申请还提供一种包括上述阵列基板的显示装置,所述显示装置还包括:
有机发光层,对应所述像素开口区设置于所述阵列基板上;
薄膜封装层,制备于所述有机发光层表面;
摄像头,对应所述摄像头区域设置于所述阵列基板背向所述有机发光层的一侧;
其中,所述摄像头区域的所述第一盲孔用于露出所述摄像头,所述走线区域的所述第二盲孔内填充有透明材料,用于增加所述走线区域的光透过率。
在本申请提供的显示装置中,所述薄膜封装层至少包括层叠设置的第一无机封装层、有机封装层和第二无机封装层,所述第二盲孔内填充有所述第一无机封装层。
为解决上述问题,本申请还提供一种阵列基板,包括衬底基板,以及依次制备于所述衬底基板上的薄膜晶体管层、平坦化层以及像素界定层,所述像素界定层用于界定出像素开口区;
所述衬底基板对应于显示区域的范围内设置有摄像头区域,所述摄像头区域包括第一盲孔和所述第一盲孔外围的走线区域;
所述第一盲孔用于露出设置于所述衬底基板背面的摄像头,所述走线区域内设置有信号走线和第二盲孔;
其中,所述第二盲孔避开所述信号走线设置,且所述第二盲孔内填充有透明材料,用于增加所述走线区域的光透过率。
在本申请提供的阵列基板中,所述第二盲孔对应设置于相邻两所述像素开口区之间的位置,所述第二盲孔呈网格状分布或间隔分布。
在本申请提供的阵列基板中,所述第二盲孔贯穿或部分贯穿所述像素界定层、所述平坦化层、所述薄膜晶体管层中的一者或一者以上。
在本申请提供的阵列基板中,所述薄膜晶体管层包括层叠的无机膜层以及间隔分布的薄膜晶体管,所述第二盲孔对应相邻两所述薄膜晶体管之间的间隔位置设置。
在本申请提供的阵列基板中,所述第二盲孔与所述信号走线以及所述薄膜晶体管之间以所述无机膜层和/或有机膜层隔开。
在本申请提供的阵列基板中,所述衬底基板背向所述像素界定层的一侧表面在对应所述走线区域的位置设置有凹槽,使得所述衬底基板对应所述凹槽位置的厚度小于其余位置的厚度。
在本申请提供的阵列基板中,所述凹槽对应所述第二盲孔的位置设置,且所述凹槽沿所述第二盲孔的延伸方向延伸。
本申请的有益效果为:相较于现有的屏下摄像头的显示装置,本申请提供的阵列基板及显示装置,在用于露出摄像头的第一盲孔外围的走线区域设置第二盲孔,且第二盲孔位于走线区域的相邻信号走线之间,不会对信号走线的排布造成影响,通过在第二盲孔内填充透明材料,可用于增加走线区域的光透过率,从而减少所述摄像头区域的不透光面积,进而提升屏占比。
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的阵列基板的局部俯视图;
图2为本申请实施例提供的阵列基板走线区域的信号走线示意图;
图3为本申请实施例提供的阵列基板的走线区域的剖面图。
以下各实施例的说明是参考附加的图示,用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本申请,而非用以限制本申请。在图中,结构相似的单元是用以相同标号表示。
本申请针对现有的屏下摄像头的显示装置,存在摄像头区域占用空间较大,影响屏占比的技术问题,本实施例能够解决该缺陷。
如图1所示,为本申请实施例提供的阵列基板的局部俯视图。所述阵列基板对应于显示区域10的范围内设置有摄像头区域20,即所述显示区域10围绕所述摄像头区域20设置,所述摄像头区域20包括第一盲孔21和所述第一盲孔21外围的走线区域22,所述第一盲孔21用于露出设置于所述阵列基板背面的摄像头(未图示),所述走线区域22内设置有信号走线和第二盲孔;其中,所述第二盲孔避开所述信号走线设置,所述第二盲孔采用挖空或填充透明材料的设计,从而增加所述走线区域22的光透过率,使得所述摄像头区域20的不透光面积减小,进而提升屏占比。
请参照图2所示,为本申请实施例提供的阵列基板走线区域的信号走线示意图。如图中所示,由于所述摄像头区域20设置有用于露出所述摄像头的所述第一盲孔21,因此,所述阵列基板上的所述信号走线220需绕过所述第一盲孔21进行排布,由此便在所述第一盲孔21的外围形成用于布线的所述走线区域22。在图中,所述信号走线220包括绕过所述第一盲孔21并沿第一方向延伸的第一信号走线221,以及绕过所述第一盲孔21并沿第二方向延伸的第二信号走线222。其中,所述第一信号走线221与所述第二信号走线222相互绝缘设置。
在一种实施例中,所述第一信号走线221包括但不限于数据线,所述第二信号走线222包括但不限于扫描线。
如图3所示,为本申请实施例提供的阵列基板的走线区域的剖面图。所述阵列基板包括:衬底基板101,所述衬底基板101包括但不限于聚酰亚胺薄膜;以及依次制备于所述衬底基板101上的阻挡层102、缓冲层103、薄膜晶体管层、平坦化层107以及像素界定层108,所述像素界定层108用于界定出像素开口区111;在所述像素界定层108上形成有图案化的间隔垫110。
其中,所述薄膜晶体管层包括依次层叠设置的无机膜层以及间隔分布于所述无机膜层中的薄膜晶体管113,所述无机膜层包括但不限于第一栅绝缘层104、第二栅绝缘层105、层间绝缘层106。所述阵列基板上还设置有图案化的阳极109,所述阳极109对应所述像素开口区111设置,并与所述薄膜晶体管113的漏极电连接。
结合图2和图3所示,所述走线区域22内设置有所述信号走线220和所述第二盲孔112,所述第二盲孔112避开所述信号走线220设置,并且所述第二盲孔112对应设置于相邻两所述像素开口区111之间的位置,不影响像素的正常排布。
在一种实施例中,所述第二盲孔112位于相邻两所述像素开口区111之间并呈网格状分布,其中,所述第二盲孔112围成的一个网格中可以包括一个所述像素开口区111,也可以包括多个所述像素开口区111,此处不做限制。
在另一种实施例中,所述第二盲孔112呈间隔的分布于相邻两所述像素开口区111之间的位置,其中,本实施例不对所述第二盲孔112的长度和宽度做出限定,只要能提高所述走线区域22的光透过率即可。
其中,所述第二盲孔112贯穿或部分贯穿所述像素界定层108、所述平坦化层107、所述薄膜晶体管层中的一者或一者以上。也就是说,所述第二盲孔112可以部分贯穿或完全贯穿所述像素界定层108;或者所述第二盲孔112由所述像素界定层108贯穿至部分所述平坦化层107;或者所述第二盲孔112贯穿所述像素界定层108以及所述平坦化层107,并与所述薄膜晶体管层接触;亦或者,所述第二盲孔112由所述像素界定层108贯穿至所述薄膜晶体管层中的某一膜层或将所述薄膜晶体管层完全贯穿。
其中,所述第二盲孔112与所述信号走线220以及所述薄膜晶体管113之间以所述无机膜层和/或有机膜层隔开,即所述第二盲孔112不暴露所述信号走线220以及所述薄膜晶体管113,从而保证所述第二盲孔112处隔绝水氧的性能。
本实施例提供的所述薄膜晶体管层的所述无机膜层均为透光膜层,其中透光率可根据实际制程及选材而定,由于所述无机膜层不影响光线的透过,因此,图中的所述第二盲孔112贯穿所述像素界定层108与所述平坦化层107,并且所述第二盲孔112对应相邻两所述薄膜晶体管113之间的间隔位置设置。使得光线透过所述无机膜层并穿过所述第二盲孔112射出,从而增加所述走线区域22的光透过率,进而使所述摄像头区域20的不透光面积减小。也就是说,原本阵列基板对应所述第一盲孔21以及所述走线区域22的位置均不透光,采用此设计,使得所述阵列基板的不透光面积缩减至所述第一盲孔21对应的区域,从而提升了屏占比。
在一种实施例中,所述第二盲孔112内填充有透明材料,从而增加所述走线区域22的光透过率,采用此设计由于在不影响光透过率的基础上将所述第二盲孔112填满,从而有利于后续膜层的制备。
在本实施例中,所述衬底基板101背向所述像素界定层108的一侧表面在对应所述走线区域22的位置设置有凹槽114,使得所述衬底基板101对应所述凹槽114位置的厚度小于其余位置的厚度,即对所述衬底基板101对应所述走线区域22位置的厚度进行减薄处理,从而进一步增加光透过率。其中,所述凹槽114的深度可根据实际需求设定。
在一种实施例中,所述凹槽114对应所述第二盲孔112的位置设置,且所述凹槽114沿所述第二盲孔112的延伸方向延伸。也就是说,所述凹槽114在所述衬底基板101上的分布与所述第二盲孔112的分布方式一致。
本实施例对所述第一盲孔21不做具体限定,所述第一盲孔21也可以为通孔,即贯穿整个所述阵列基板,也可以只贯穿所述阵列基板上的多个膜层,只要不影响所述摄像头的拍摄性能即可,此处不做限制。另外,所述衬底基板101的背面对应所述第一盲孔21的位置也可以进行减薄处理,此处不再赘述。
本申请还提供一种包括上述阵列基板的显示装置,结合图1~图3所示,所述显示装置还包括:有机发光层,对应所述像素开口区111设置于所述阵列基板上;阴极层,设置于所述有机发光层上;薄膜封装层,制备于所述阴极层表面;摄像头组件,对应所述摄像头区域20设置于所述阵列基板背向所述有机发光层的一侧;所述摄像头组件中包括摄像头;其中,所述摄像头区域20的所述第一盲孔21用于漏出所述摄像头,所述走线区域22的所述第二盲孔112内填充有透明材料,用于增加所述走线区域22的光透过率。
在一种实施例中,所述薄膜封装层至少包括层叠设置的第一无机封装层、有机封装层和第二无机封装层,所述第二盲孔112内填充有所述第一无机封装层,此设计可不用增加透明材料的制备工艺,直接利用所述薄膜封装层进行填充,从而简化工艺。
综上所述,本申请提供的阵列基板及显示装置,在用于露出摄像头的第一盲孔外围的走线区域设置第二盲孔,且第二盲孔位于走线区域的相邻信号走线之间,不会对信号走线的排布造成影响,通过在第二盲孔内填充透明材料,可用于增加走线区域的光透过率,从而减少所述摄像头区域的不透光面积,进而提升屏占比。
综上所述,虽然本申请已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。
Claims (16)
- 一种阵列基板,其包括衬底基板,以及依次制备于所述衬底基板上的薄膜晶体管层、平坦化层以及像素界定层,所述像素界定层用于界定出像素开口区;所述衬底基板对应于显示区域的范围内设置有摄像头区域,所述摄像头区域包括第一盲孔和所述第一盲孔外围的走线区域;所述第一盲孔用于露出设置于所述衬底基板背面的摄像头,所述走线区域内设置有信号走线和第二盲孔;其中,所述第二盲孔避开所述信号走线设置,用于增加所述走线区域的光透过率。
- 根据权利要求1所述的阵列基板,其中,所述第二盲孔对应设置于相邻两所述像素开口区之间的位置,所述第二盲孔呈网格状分布或间隔分布。
- 根据权利要求1所述的阵列基板,其中,所述第二盲孔贯穿或部分贯穿所述像素界定层、所述平坦化层、所述薄膜晶体管层中的一者或一者以上。
- 根据权利要求3所述的阵列基板,其中,所述薄膜晶体管层包括层叠的无机膜层以及间隔分布的薄膜晶体管,所述第二盲孔对应相邻两所述薄膜晶体管之间的间隔位置设置。
- 根据权利要求4所述的阵列基板,其中,所述第二盲孔与所述信号走线以及所述薄膜晶体管之间以所述无机膜层和/或有机膜层隔开。
- 根据权利要求1所述的阵列基板,其中,所述衬底基板背向所述像素界定层的一侧表面在对应所述走线区域的位置设置有凹槽,使得所述衬底基板对应所述凹槽位置的厚度小于其余位置的厚度。
- 根据权利要求6所述的阵列基板,其中,所述凹槽对应所述第二盲孔的位置设置,且所述凹槽沿所述第二盲孔的延伸方向延伸。
- 一种包括权利要求1所述的阵列基板的显示装置,其中,所述显示装置还包括:有机发光层,对应所述像素开口区设置于所述阵列基板上;薄膜封装层,制备于所述有机发光层表面;摄像头,对应所述摄像头区域设置于所述阵列基板背向所述有机发光层的一侧;其中,所述摄像头区域的所述第一盲孔用于露出所述摄像头,所述走线区域的所述第二盲孔内填充有透明材料,用于增加所述走线区域的光透过率。
- 根据权利要求8所述的显示装置,其中,所述薄膜封装层至少包括层叠设置的第一无机封装层、有机封装层和第二无机封装层,所述第二盲孔内填充有所述第一无机封装层。
- 一种阵列基板,其包括衬底基板,以及依次制备于所述衬底基板上的薄膜晶体管层、平坦化层以及像素界定层,所述像素界定层用于界定出像素开口区;所述衬底基板对应于显示区域的范围内设置有摄像头区域,所述摄像头区域包括第一盲孔和所述第一盲孔外围的走线区域;所述第一盲孔用于露出设置于所述衬底基板背面的摄像头,所述走线区域内设置有信号走线和第二盲孔;其中,所述第二盲孔避开所述信号走线设置,且所述第二盲孔内填充有透明材料,用于增加所述走线区域的光透过率。
- 根据权利要求10所述的阵列基板,其中,所述第二盲孔对应设置于相邻两所述像素开口区之间的位置,所述第二盲孔呈网格状分布或间隔分布。
- 根据权利要求10所述的阵列基板,其中,所述第二盲孔贯穿或部分贯穿所述像素界定层、所述平坦化层、所述薄膜晶体管层中的一者或一者以上。
- 根据权利要求12所述的阵列基板,其中,所述薄膜晶体管层包括层叠的无机膜层以及间隔分布的薄膜晶体管,所述第二盲孔对应相邻两所述薄膜晶体管之间的间隔位置设置。
- 根据权利要求13所述的阵列基板,其中,所述第二盲孔与所述信号走线以及所述薄膜晶体管之间以所述无机膜层和/或有机膜层隔开。
- 根据权利要求10所述的阵列基板,其中,所述衬底基板背向所述像素界定层的一侧表面在对应所述走线区域的位置设置有凹槽,使得所述衬底基板对应所述凹槽位置的厚度小于其余位置的厚度。
- 根据权利要求15所述的阵列基板,其中,所述凹槽对应所述第二盲孔的位置设置,且所述凹槽沿所述第二盲孔的延伸方向延伸。
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