WO2020230457A1 - パワー半導体モジュールおよびその製造方法 - Google Patents

パワー半導体モジュールおよびその製造方法 Download PDF

Info

Publication number
WO2020230457A1
WO2020230457A1 PCT/JP2020/013235 JP2020013235W WO2020230457A1 WO 2020230457 A1 WO2020230457 A1 WO 2020230457A1 JP 2020013235 W JP2020013235 W JP 2020013235W WO 2020230457 A1 WO2020230457 A1 WO 2020230457A1
Authority
WO
WIPO (PCT)
Prior art keywords
adhesive layer
power semiconductor
semiconductor module
frame
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2020/013235
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
勇治 梅田
良男 築山
陽彦 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
NGK Electronics Devices Inc
Original Assignee
NGK Insulators Ltd
NGK Electronics Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd, NGK Electronics Devices Inc filed Critical NGK Insulators Ltd
Priority to JP2021519292A priority Critical patent/JP7159464B2/ja
Publication of WO2020230457A1 publication Critical patent/WO2020230457A1/ja
Priority to US17/449,692 priority patent/US20220020651A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/259—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/134—Containers comprising a conductive base serving as an interconnection having other interconnections parallel to the conductive base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/755—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent insulating package substrate, interpose or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • the present invention relates to a power semiconductor module and a method for manufacturing the same, and in particular, a package for forming a sealing space for sealing a power semiconductor element without gloss leak by attaching a lid, and sealing without gloss leak. It is related to the power semiconductor element made.
  • the container forming the sealing space for sealing the power semiconductor element may be required to have high airtightness so as not to cause gloss leak.
  • high-frequency semiconductor devices are often required to be sealed without gloss leaks.
  • a container that constitutes a sealing space for sealing a power semiconductor element by attaching a lid is also referred to as a package.
  • the package has a cavity, and the cavity is sealed by the lid to provide a sealing space.
  • the power semiconductor device is mounted on the package in the cavity before the lid is attached to the package.
  • the heat sink plate, the ceramic frame, and the external connection terminal are connected to each other.
  • the heat sink is made of a composite material.
  • the composite material include a Cu-W-based composite metal plate, a Cu-Mo-based composite metal plate, and a clad composite metal plate in which Cu plates are bonded to both sides of a Cu-Mo-based alloy metal plate.
  • the heat sink plate and the ceramic frame are joined by Ag-Cu brazing at about 780 ° C to 900 ° C.
  • a high-frequency semiconductor element is mounted on this package.
  • the cavity is sealed by adhering the lid body to the upper surface portion of the ceramic frame body. In other words, the high frequency semiconductor element is airtightly sealed in the sealing space.
  • the coefficient of thermal expansion of the heat sink can be brought close to the coefficient of thermal expansion of the ceramic frame and the semiconductor element. This makes it possible to prevent destruction due to the difference in thermal expansion and contraction. Therefore, it is permissible to bond the ceramic frame and the semiconductor element onto the heat sink plate at a high temperature.
  • the heat sink plate and the ceramic frame are already joined to each other. In order to mount the semiconductor element so that the bonding is not impaired, there is a restriction that the semiconductor element must be mounted at a temperature lower than the bonding temperature of the ceramic frame. In the above technique, the ceramic frame is bonded at a high temperature of about 780 ° C.
  • the semiconductor element can be mounted by brazing, for example, at a mounting temperature of about 400 ° C., which is relatively high.
  • Patent Document 2 Cu or a Cu-based metal plate is used as the heat sink plate.
  • Cu is an extremely excellent material in that a high thermal conductivity exceeding 300 W / m ⁇ K can be easily obtained while being relatively inexpensive. Therefore, unlike the technique of JP-A-2005-150133 described above in which the heat sink plate is made of a composite material, a heat sink plate having high thermal conductivity can be obtained at low cost.
  • this technique first, a semiconductor element is mounted on a heat sink plate by brazing. Next, the frame body to which the external connection terminals are bonded in advance is joined on the heat sink plate so as to surround the semiconductor element.
  • the frame is bonded at a temperature lower than the brazing temperature of the semiconductor element.
  • the cavity is sealed by joining the lid to the upper surface side of the frame.
  • the semiconductor element is airtightly sealed in the sealing space. As a result, a high frequency power module can be obtained.
  • the cavity of the package is formed by joining the frame to the heat sink plate after mounting the semiconductor element. Therefore, in this technique, the process after mounting the semiconductor element is more complicated than the technique of JP-A-2005-150133 described above. This hinders the rapid completion of the semiconductor module after mounting the semiconductor element. This is not preferable for semiconductor module manufacturers.
  • semiconductor modules using packages often undergo thermal expansion and contraction during their use. Therefore, it is desired that not only the power semiconductor module can be completed promptly after mounting the power semiconductor element, but also the occurrence of gloss leak due to damage caused by the difference in thermal expansion and contraction during use can be prevented.
  • the present invention has been made to solve the above problems, and an object of the present invention is to quickly complete a power semiconductor module after mounting a power semiconductor element while using a heat sink plate having high thermal conductivity. It is an object of the present invention to provide a power semiconductor module and a method for manufacturing the same, which can prevent the occurrence of gloss leak due to damage caused by the difference in thermal expansion and contraction.
  • the power semiconductor module of the present invention includes a package including an external terminal electrode, a frame, a heat sink plate, and a first adhesive layer, a power semiconductor element, a lid, and a second adhesive layer.
  • the frame is made of a first material and is attached with an external terminal electrode.
  • the heat sink plate is made of a non-composite material that supports the frame, has a mounting area inside the frame, and contains copper at a purity of 95.0 weight percent or more.
  • the first adhesive layer is made of a second material different from the first material, has a first composition, and adheres the frame body and the heat sink plate to each other.
  • the power semiconductor element is mounted on the mounting area of the heat sink plate.
  • the lid is attached to the frame to form a sealing space for sealing the power semiconductor element without gloss leak.
  • the second adhesive layer adheres the frame body and the lid body to each other, and has a second composition different from the first composition of the first adhesive layer.
  • the method for manufacturing a power semiconductor module of the present invention has the following steps.
  • the process of preparing the package is carried out.
  • the package supports the external terminal electrode, the frame body made of the first material and to which the external terminal electrode is attached, and the frame body, has an unmounted area in the frame body, and is copper with a purity of 95.0% by weight or more.
  • a heat sink plate made of a non-composite material containing the above, a first adhesive layer made of a second material different from the first material, having a first composition, and adhering the frame and the heat sink plate to each other.
  • the step of mounting the power semiconductor element on the unmounted region of the heat sink plate is performed.
  • a step of attaching a lid to the frame is performed in order to form a sealing space for sealing the power semiconductor element without gloss leak.
  • the step of attaching the lid includes a step of adhering the frame and the lid to each other to form a second adhesive layer having a second composition different from the first composition of the first adhesive layer.
  • the second adhesive layer that adheres the frame body and the lid body to each other has a second composition different from the first composition of the first adhesive layer.
  • the composition of the second adhesive layer can be made suitable for buffering the difference in thermal expansion and contraction between the package and the lid as compared with the composition of the first adhesive layer. Therefore, it is possible to prevent the occurrence of gloss leak due to damage caused by this difference in thermal expansion and contraction.
  • FIG. 5 is a cross-sectional view schematically showing a first step of the method for manufacturing a power semiconductor module shown in FIG. 7.
  • FIG. 5 is a cross-sectional view schematically showing a second step of the method for manufacturing a power semiconductor module shown in FIG. 7.
  • FIG. 5 is a cross-sectional view schematically showing a modified example of one step of the package manufacturing method shown in FIG. It is sectional drawing which shows schematic the structure of the power semiconductor module in Embodiment 2 of this invention. It is a partially enlarged view of FIG. It is sectional drawing which shows schematic structure of the package for a power semiconductor module in Embodiment 2 of this invention. It is sectional drawing which shows roughly the 1st step of the manufacturing method of the power semiconductor module in Embodiment 2 of this invention.
  • FIG. 1 is a cross-sectional view schematically showing the configuration of the power semiconductor module 900 according to the present embodiment.
  • the power semiconductor module 900 includes a package 100 (details will be described later with reference to FIG. 2), a power semiconductor element 200, and a lid 300. Further, the power semiconductor module 900 has an adhesive layer 46 (second adhesive layer) and a bonding layer 42.
  • the power semiconductor element 200 may be a high frequency semiconductor element.
  • a high-frequency semiconductor element is a semiconductor element that operates at a frequency of approximately several tens of MHz (for example, 30 MHz) or more and 30 GHz or less.
  • the power semiconductor module 900 is a high frequency module.
  • the power semiconductor device 200 suitable for high frequency applications is typically an LDMOS (lateral diffusion MOS) transistor or a GaN (gallium nitride) transistor.
  • the power semiconductor element 200 is arranged on the mounting area 55M of the heat sink plate 50 of the package 100.
  • the mounting region 55M and the power semiconductor device 200 are preferably bonded to each other via a bonding layer 42 containing a thermosetting resin and a metal.
  • the thermosetting resin of the bonding layer 42 preferably contains an epoxy resin.
  • the metal of the bonding layer 42 preferably contains silver.
  • the package 100 has a heat sink plate 50 and a frame 80, which will be described in detail later.
  • the heat sink plate 50 has a mounting area 55M in the frame body 80.
  • the heat sink plate 50 has a mounting area 55M surrounded by the frame body 80.
  • the power semiconductor element 200 is mounted on the mounting area 55M of the heat sink plate 50.
  • a lid 300 is attached to the package 100.
  • the adhesive layer 46 adheres the frame body 80 and the lid body 300 to each other.
  • a sealing space 950 for sealing the power semiconductor element 200 without gloss leakage is configured. Therefore, the power semiconductor element 200 is highly airtight and is protected from the external environment so that water vapor and other gases in the atmosphere do not enter.
  • the sealing space 950 preferably has environmental resistance to 500 cycles of temperature change between ⁇ 65 ° C. and + 150 ° C. Specifically, it is preferable that the sealing space 950 does not have a gloss leak even after being exposed to the above temperature change.
  • FIG. 2 is a cross-sectional view schematically showing the configuration of the package 100 in the present embodiment.
  • Package 100 will be used for manufacturing the power semiconductor module 900 (FIG. 1).
  • the package 100 is for forming a sealing space 950 (FIG. 1) by attaching the lid 300 (FIG. 1).
  • the sealing space 950 (FIG. 1) seals the power semiconductor element 200 (FIG. 1) without gloss leakage.
  • Package 100 has a cavity 110 that serves as a sealing space 950 (FIG. 1).
  • the package 100 has an external terminal electrode 90, a frame body 80, a heat sink plate 50, and an adhesive layer 41 (first adhesive layer).
  • the frame body 80 is made of a first material (hereinafter, also referred to as "material of the frame body 80").
  • the material of the frame 80 preferably has heat resistance to heat treatment at 260 ° C. for 2 hours.
  • the material of the frame body 80 preferably contains a first resin (hereinafter, also referred to as “resin of the frame body 80”).
  • the resin of the frame 80 is preferably a thermoplastic resin.
  • an inorganic filler (first inorganic filler) is dispersed in the resin of the frame body 80.
  • the inorganic filler in the resin of the frame 80 preferably contains at least one of fibrous particles and plate-like particles.
  • the fibrous or plate-like shape prevents the filler from inhibiting the flow of the resin when the frame 80 is formed by an injection molding technique or the like.
  • the material of such inorganic fillers include silica glass fiber, alumina fiber, carbon fiber, talc (3MgO ⁇ 4SiO 2 ⁇ H 2 O), wollastonite, mica, graphite, calcium carbonate, dolomite, glass flakes, Glass beads, barium sulfate and titanium oxide are used.
  • the size of the inorganic filler made of talc on a flat plate is, for example, a particle size of 1 ⁇ m to 50 ⁇ m.
  • the particle size is an arithmetic mean value of the major axis obtained by observing the cross section of the resin.
  • the coefficient of thermal expansion of the inorganic filler is preferably 17 ppm / K or less in view of the coefficient of thermal expansion of copper.
  • the content of the inorganic filler is preferably 30 wt% to 70 wt%.
  • An external terminal electrode 90 is attached to the frame body 80.
  • the external terminal electrode 90 is directly attached to the frame body 80.
  • the external terminal electrode 90 is made of metal and preferably contains copper at a purity of 90 wt% (weight percent) or higher.
  • Kovar trademark
  • an iron / nickel alloy may be used instead of the material containing copper with high purity as described above.
  • the surface of the external terminal electrode 90 may be nickel-plated or gold-plated on the nickel plating for the purpose of ensuring bondability with the bonding wire 205 or the like.
  • the heat sink plate 50 supports the frame body 80.
  • the heat sink plate 50 is made of a non-composite material having a purity of 95.0 wt% or more, preferably 99.8 wt% or more, and containing copper.
  • the heat sink plate 50 has an inner surface 51 surrounded by a frame body 80.
  • the inner surface 51 has an unmounted region 55U on which the power semiconductor element 200 (FIG. 1) is mounted and a peripheral region 54 on which the power semiconductor element 200 is not mounted.
  • the unmounted area 55U is an area in which the power semiconductor element 200 is mounted, although the power semiconductor element 200 is not mounted.
  • the portion that becomes the mounting area 55M (FIG. 1) when the power semiconductor element 200 (FIG. 1) is mounted is the unmounted area 55U.
  • the unmounted area 55U is preferably exposed.
  • the heat sink plate 50 has an outer surface (lower surface in FIG. 2) opposite to the inner surface 51. The outer surface is usually attached to other members when the power semiconductor module 900 is used, but may be exposed when the power semiconductor module 900 is manufactured.
  • the adhesive layer 41 adheres the frame body 80 and the heat sink plate 50 to each other.
  • the adhesive layer 41 is made of a second material (hereinafter, also referred to as “material of the adhesive layer 41”) different from the material of the frame body 80.
  • the material of the adhesive layer 41 preferably contains a second resin (hereinafter, also referred to as "resin of the adhesive layer 41").
  • the resin of the adhesive layer 41 is preferably a thermosetting resin from the viewpoint of heat resistance and high fluidity before curing.
  • an inorganic filler (second inorganic filler) is dispersed in the resin of the adhesive layer 41.
  • the inorganic filler in the resin of the adhesive layer 41 preferably contains at least one of silica glass and crystalline silica, and is more preferably made of silica glass.
  • the coefficient of thermal expansion of silica glass is about 0.5 ppm / K
  • the coefficient of thermal expansion of crystalline silica is about 15 ppm / K
  • the coefficient of thermal expansion of inorganic filler is 17 ppm / K or less. can do. This is particularly desirable when an epoxy resin or a fluororesin is used as the resin of the adhesive layer 41.
  • the content of the inorganic filler is preferably 50 wt% to 90 wt%.
  • At least one of alumina, aluminum hydroxide, talc, iron oxide, wollastonite, calcium carbonate, mica, titanium oxide, and carbon fiber is used in place of, or in combination with, at least one of silica glass and crystalline silica. You may.
  • the shape of the inorganic filler is, for example, spherical, fibrous, or plate-like.
  • a silicone resin is used as the resin of the adhesive layer 41, since the silicone resin has rubber elasticity, the limitation of the coefficient of thermal expansion of the inorganic filler can be almost ignored.
  • the content of the inorganic filler may be adjusted from the viewpoint of controlling the fluidity of the adhesive layer 41, and is preferably 1 wt% to 10 wt%.
  • spherical silica glass non-crystalline silica having a particle size of 1 ⁇ m to 50 ⁇ m is optimal.
  • the particle size indicates the arithmetic mean diameter measured by observing the cross section of the resin.
  • the elastic modulus of the adhesive layer 41 is preferably 10 GPa or more and 20 GPa or less. As described above, the adhesive layer 41 preferably has a high elastic modulus as compared with a general adhesive layer. The reason for this is that when it is intended to impart heat resistance to a thermal load (typically, a load of about 260 ° C. for 2 hours) associated with the mounting process of the power semiconductor element 200 to the package 100, it is used as a material for the adhesive layer 41. This is because it is often necessary to select a material having a high elastic modulus.
  • a thermal load typically, a load of about 260 ° C. for 2 hours
  • the adhesive layer 41 In order to bring the thermal expansion coefficient of the adhesive layer 41 closer to the thermal expansion coefficient of the heat sink plate 50 (about 17 ppm / K in the case of Cu) in order to reduce the thermal stress, in many cases, the adhesive layer 41 There is no choice but to increase the elastic modulus of.
  • the adhesive layer 41 has a first composition
  • the adhesive layer 46 (FIG. 1) has a second composition different from the first composition.
  • a difference in the amount of filler means a difference in composition by itself.
  • the elastic modulus of the adhesive layer 46 is preferably lower than the elastic modulus of the adhesive layer 41.
  • the elastic modulus of the adhesive layer 46 may be less than half that of the adhesive layer 41. Strictly speaking, the elastic modulus of the adhesive layer is temperature-dependent, but in this comparison, the elastic modulus at room temperature (for example, 20 ° C.) can be used as a guide.
  • the adhesive layer 41 preferably contains an inorganic filler in a first weight ratio. It is preferable that the adhesive layer 46 contains an inorganic filler at a second weight ratio smaller than the first weight ratio, or does not contain an inorganic filler.
  • the inorganic filler is made of, for example, silica glass having a particle size of about 1 ⁇ m to 50 ⁇ m.
  • the second weight ratio may be less than half of the first weight ratio.
  • Adhesion by the adhesive layer 41 is airtight.
  • This airtightness preferably has heat resistance to heat treatment at 260 ° C. for 2 hours.
  • the airtightness between the heat sink plate 50 and the frame 80 is preferably heat resistant to heat treatment at 260 ° C. for 2 hours.
  • the package 100 (FIG. 2) is heat-treated at 260 ° C. for 2 hours.
  • the lid 300 may be attached to the package 100 with sufficient airtightness and a gloss leak test may be performed. If the lid 300 and its mounting structure have sufficient heat resistance, the lid 300 may be mounted before the heat treatment.
  • the airtightness between the lid 300 and the frame 80 is preferably heat resistant to heat treatment at 260 ° C. for 30 seconds. Therefore, the adhesive layer 46 preferably has heat resistance to heat treatment at 260 ° C. for 30 seconds.
  • the heat treatment at 260 ° C. for 30 seconds is a typical heat treatment in the mounting process of the power semiconductor module 900. Unlike the adhesive layer 41, the adhesive layer 46 is not heated during the mounting process of the power semiconductor element 200, so that high heat resistance enough to withstand about 260 ° C. for 2 hours is not usually required.
  • the power semiconductor element 200 is mounted on the unmounted area 55U of the heat sink plate 50.
  • the exposed unmounted region 55U (FIG. 2) becomes the mounted region 55M (FIG. 3) covered by the power semiconductor element 200.
  • the unmounted region 55U of the heat sink plate 50 and the power semiconductor element 200 are bonded to each other via a bonding layer 42 containing a thermosetting resin and a metal.
  • This bonding is preferably carried out by applying a paste-like adhesive containing a thermosetting resin and a metal, and curing the adhesive.
  • the thermosetting resin of the bonding layer 42 preferably contains an epoxy resin.
  • the metal of the bonding layer 42 preferably contains silver.
  • the power semiconductor module 900 and the external terminal electrode 90 are then connected by the bonding wire 205 in the cavity 110. This ensures an electrical connection between the power semiconductor module 900 and the external terminal electrode 90.
  • the electrical connection between the power semiconductor module 900 and the external terminal electrode 90 may be secured by a method other than the bonding wire 205, and in that case, the bonding wire 205 is not always necessary.
  • the power semiconductor element 200 is sealed without gloss leak by mounting the lid 300 on the frame 80.
  • the power semiconductor module 900 is obtained.
  • an adhesive layer 46 that adheres the frame body 80 and the lid body 300 to each other is formed. The specific step of forming the adhesive layer 46 will be described in the second embodiment described later.
  • the lid 300 is attached to the package 100 so as not to give heat damage to the package 100 on which the power semiconductor element 200 is mounted so as to cause a gloss leak.
  • the lid 300 is attached to the package 100 so as not to cause heat damage to the adhesive layer 41 so as to cause gloss leak.
  • the lid 300 is attached to the package 100 via an adhesive layer 46 that has been cured at a curing temperature low enough not to lead to the thermal damage described above. This curing temperature is, for example, less than 260 ° C.
  • the manufacturing method of the package 100 (FIG. 2) will be described.
  • the frame body 80 to which the external terminal electrodes 90 are attached are prepared.
  • the frame body 80 to which the external terminal electrode 90 is attached can be formed by integrally molding the external terminal electrode 90 made of metal and the frame body 80 made of resin.
  • the adhesive 41h is applied to the lower surface of the frame body 80.
  • the lower surface of the frame body 80 is attached to the upper surface of the heat sink plate 50 via the adhesive 41h.
  • the adhesive layer 41 (FIG. 2) is formed by curing the adhesive 41h. This gives Package 100.
  • the power semiconductor module 900A of the comparative example has a package 100A.
  • the package 100A has a frame body 80A, a heat sink plate 50A, and an adhesive layer 41A.
  • the frame body 80A is made of ceramic and therefore has high heat resistance.
  • the heat sink plate 50A is made of a composite material. Specifically, the heat sink plate 50A has a laminated structure composed of a Cu—Mo layer 58B and Cu layers 59A provided on the upper surface and the lower surface thereof.
  • the coefficient of thermal expansion of the heat sink plate 50A can be brought close to the coefficient of thermal expansion of the frame body 80A made of ceramic and the power semiconductor element 200. This makes it possible to prevent destruction due to the difference in thermal expansion and contraction. Therefore, it is permissible to bond the frame body 80A and the power semiconductor element 200 onto the heat sink plate 50A at a high temperature.
  • the heat sink plate and the frame are already joined to each other as in the above-described embodiment.
  • the power semiconductor element 200 In order to mount the power semiconductor element 200 so that the bonding is not impaired, there is a restriction that the power semiconductor element 200 must be mounted at a temperature lower than the bonding temperature of the frame 80A.
  • the frame body 80A since the frame body 80A itself has high heat resistance and the difference between the coefficient of thermal expansion of the frame body 80A and the coefficient of thermal expansion of the heat sink plate 50A is small, the frame body 80A and the heat sink plate 50A are used.
  • the joining can be carried out at a high temperature of about 780 ° C. to 900 ° C.
  • the bonding layer 42A for mounting the power semiconductor device 200 can be formed by brazing at a high temperature of, for example, about 400 ° C.
  • thermo conductivity of the heat sink plate 50A it is necessary to use a composite material as the material of the heat sink plate 50A in order to adjust the coefficient of thermal expansion. Therefore, unlike the case of the heat sink plate 50 (FIG. 1: the present embodiment), a non-composite material having copper as a main component cannot be used.
  • a non-composite material made of high-purity copper is an extremely excellent material in that a high thermal conductivity exceeding 300 W / m ⁇ K can be easily obtained while being relatively inexpensive. Such an excellent material cannot be used in this comparative example. Therefore, in this comparative example, it is not easy to make the thermal conductivity of the heat sink plate 50A higher than 300 W / m ⁇ K.
  • the manufacturing method of the power semiconductor module 900B (FIG. 7) of another comparative example will be described below.
  • the power semiconductor element 200 is mounted on the heat sink plate 50 by using the bonding layer 42.
  • the adhesive 41Bh is applied to the lower surface of the frame body 80B.
  • the lower surface of the frame body 80B is attached onto the upper surface of the heat sink plate 50 via the adhesive 41Bh.
  • the adhesive layer 41B (FIG. 9) is formed by curing the adhesive 41Bh. This gives Package 100.
  • the power semiconductor module 900B is obtained by joining the lid 300 to the upper surface side of the frame 80B as in the above-described embodiment.
  • the power semiconductor element 200 is already mounted by the bonding layer 42 (FIG. 8) before the frame body 80B is mounted by the adhesive layer 41B (FIG. 9). Therefore, the adhesive layer 41B and the frame body 80B are not exposed to high temperature treatment for mounting the power semiconductor element 200. Therefore, the structure and material of the adhesive layer 41B and the frame body 80B can be determined without much consideration for heat resistance. While having such advantages, in this comparative example, a step of adhering the frame body 80B is required after mounting the power semiconductor element 200. Therefore, the process after mounting the power semiconductor element 200 is complicated. This hinders the rapid completion of the power semiconductor module 900B after mounting the power semiconductor element 200. This is not preferable for the manufacturer of the power semiconductor module 900B.
  • the heat sink plate 50 (FIG. 1) is made of a non-composite material having a purity of 95.0 wt% or more and containing copper. As a result, a high thermal conductivity exceeding 300 W / m ⁇ K can be easily obtained. For example, a material of Japanese Industrial Standards (JIS) C1510 (purity of 99.82 wt% or more and containing copper) can obtain a high thermal conductivity of 347 W / m ⁇ K. Further, before mounting the power semiconductor element 200, the heat sink plate 50 has an unmounted region 55U (FIG. 2) in the frame 80 on which the power semiconductor element 200 will be mounted.
  • JIS Japanese Industrial Standards
  • the frame body 80 is already mounted on the heat sink plate 50. Therefore, the step of mounting the frame 80 on the heat sink plate 50 after mounting the power semiconductor element 200 is not required. From the above, it is possible to quickly complete the power semiconductor module 900 after mounting the power semiconductor element 200 while using the heat sink plate 50 having a high thermal conductivity.
  • the adhesive layer 46 that adheres the frame body 80 and the lid 300 to each other has a second composition different from the first composition of the adhesive layer 41.
  • the composition of the adhesive layer 46 can be made suitable for buffering the difference in thermal expansion and contraction between the package 100 and the lid 300 as compared with the composition of the adhesive layer 41. Therefore, it is possible to prevent the occurrence of gloss leak due to damage caused by this difference in thermal expansion and contraction.
  • the elastic modulus of the adhesive layer 46 is lower than the elastic modulus of the adhesive layer 41. Thereby, the composition of the adhesive layer 46 can be made suitable for buffering the difference in thermal expansion and contraction between the package 100 and the lid 300 as compared with the composition of the adhesive layer 41.
  • the elastic modulus of the adhesive layer 41 is higher than the elastic modulus of the adhesive layer 46, the coefficient of thermal expansion of the adhesive layer 41 can be easily brought close to the coefficient of thermal expansion of the heat sink plate 50. As a result, damage to the package due to thermal stress can be suppressed.
  • the present inventors particularly important the consistency of the coefficient of thermal expansion with the heat sink plate 50 for the adhesive layer 41, while the adhesive layer 46. Has come up with the above configuration from the idea that stress relaxation due to its own elasticity is particularly important.
  • the elastic modulus of the adhesive layer 41 is 10 GPa or more and 20 GPa or less. If the same composition as that of the adhesive layer 41 having such a high elastic modulus is applied to the adhesive layer 46, the power semiconductor is caused by the difference in thermal expansion and contraction between the package 100 and the lid 300. The module 900, especially its lid 300, is prone to damage. And gloss leaks can occur due to this damage. According to the present embodiment, since the composition of the adhesive layer 46 is different from the composition of the adhesive layer 41, such a situation can be avoided.
  • the adhesive layer 46 contains an inorganic filler at a second weight ratio smaller than the first weight ratio, or does not contain an inorganic filler. As a result, the elastic modulus of the adhesive layer 46 can be reduced. Therefore, the action of relaxing the thermal stress caused by the difference in the coefficient of thermal expansion between the package 100 and the lid 300 by the elasticity of the adhesive layer 46 is enhanced.
  • the airtightness between the lid 300 and the frame 80 has heat resistance to heat treatment at 260 ° C. for 30 seconds.
  • the mounting step of the power semiconductor module 900 corresponding to the same thermal load as the heat treatment at 260 ° C. for 30 seconds can be carried out.
  • the airtightness between the heat sink plate 50 and the frame 80 is preferably heat resistant to heat treatment at 260 ° C. for 2 hours. As a result, even if a thermal load corresponding to a heat treatment at 260 ° C. for 2 hours is applied at the time of mounting the power semiconductor element 200, it can be avoided that it causes a gloss leak in the sealing space 950 (FIG. 1).
  • the sealing space 950 (FIG. 1) preferably has environmental resistance to temperature changes of 500 cycles between -65 ° C and + 150 ° C.
  • the composition of the adhesive layer 46 is the same as the composition of the adhesive layer 41, a gloss leak occurs due to damage caused by the difference in thermal expansion and contraction between the package 100 and the lid 300 during this temperature cycle.
  • Cheap since the composition of the adhesive layer 46 is different from the composition of the adhesive layer 41, such a situation can be avoided.
  • the power semiconductor element 200 can be maintained in an airtight atmosphere even under a relatively severe temperature change. Therefore, the reliability of the power semiconductor element 200 can be more reliably maintained.
  • the unmounted area 55U (Fig. 2) is exposed.
  • the power semiconductor element 200 (FIG. 1) can be easily mounted on the unmounted region 55U (FIG. 2).
  • the material of the frame 80 preferably contains a resin. As a result, brittle fracture due to thermal stress from the heat sink plate 50 to the frame 80 is less likely to occur.
  • the resin of the frame 80 is preferably a thermoplastic resin.
  • the frame body 80 can be formed with high productivity by using injection molding technology or the like.
  • the inorganic filler is dispersed in the resin of the frame body 80. As a result, the coefficient of thermal expansion of the frame body 80 can be brought close to the coefficient of thermal expansion of the heat sink plate 50.
  • the inorganic filler in the resin of the frame 80 preferably contains at least one of fibrous particles and plate-like particles. As a result, when the frame body 80 is formed by injection molding technology or the like, it is possible to prevent the filler from inhibiting the flow of the resin.
  • the material of the adhesive layer 41 preferably contains a resin. As a result, the thermal stress applied from the heat sink plate 50 to the frame body 80 via the adhesive layer 41 is relaxed. Therefore, the frame 80 is less likely to be broken due to thermal stress.
  • the resin of the adhesive layer 41 is preferably a thermosetting resin. As a result, the heat resistance of the adhesive layer 41 can be enhanced, and the fluidity can be easily ensured before curing. This fluidity is important for ensuring the productivity of the process of forming the adhesive layer 41. If the fluidity is low, it is difficult to use methods such as printing, dispensing and spraying. It is preferable that the inorganic filler is dispersed in the resin of the adhesive layer 41.
  • the coefficient of thermal expansion of the adhesive layer 41 can be brought close to the coefficient of thermal expansion of the heat sink plate 50. Therefore, it is possible to prevent fracture due to thermal stress under high temperature or temperature cycle.
  • the inorganic filler in the resin of the adhesive layer 41 preferably contains at least one of silica glass and crystalline silica, and more preferably made of silica glass. As a result, the coefficient of thermal expansion of the inorganic filler can be set to 17 ppm / K or less in view of the coefficient of thermal expansion of copper.
  • the unmounted region 55U (FIG. 2) of the heat sink plate 50 and the power semiconductor element 200 are connected to each other via a bonding layer 42 (FIG. 1) containing a thermosetting resin and a metal. It is preferable that they are joined to each other. Since the bonding layer 42 contains a metal, the heat dissipation from the power semiconductor element 200 to the heat sink plate 50 can be improved. Further, when the bonding layer 42 contains the resin, the thermal stress applied from the heat sink plate 50 to the power semiconductor element 200 via the bonding layer 42 is relaxed. As a result, the power semiconductor element 200 is less likely to be destroyed due to thermal stress.
  • the external terminal electrode 90 is directly attached to the frame body 80. This eliminates the need for a step of adhering the external terminal electrode 90 and the frame 80 to each other. Therefore, the assembly process of the package 100 can be simplified.
  • FIG. 10 is a cross-sectional view schematically showing a modified example of one step (FIG. 5) of the manufacturing method of the package 100.
  • the adhesive 41h is applied not to the lower surface of the frame 80 but to the upper surface of the heat sink plate 50.
  • the adhesive 41h may be applied to both the lower surface of the frame body 80 and the upper surface of the heat sink plate 50.
  • FIG. 11 is a cross-sectional view schematically showing the configuration of the power semiconductor module 900v according to the present embodiment.
  • the package 100v is used instead of the package 100 (FIG. 2).
  • FIG. 12 is a partially enlarged view of FIG.
  • the thickness of the adhesive layer 46 is, for example, 250 ⁇ m or more and 400 ⁇ m or less. When the thickness is 250 ⁇ m or more, the effect of relaxing the thermal stress due to the elasticity of the adhesive layer 46 can be more sufficiently obtained. Further, when the thickness is 400 ⁇ m or less, the protrusion of the adhesive layer 46 (see FIG. 12) can be suppressed.
  • FIG. 13 is a cross-sectional view schematically showing the configuration of the package 100v.
  • the lower surface of the external terminal electrode 90 is attached to the frame body 80v by an adhesive layer 44v (third adhesive layer). That is, the package 100v has an adhesive layer 44v that adheres the external terminal electrode 90 and the frame body 80v to each other. Further, an additional frame body 80u is attached to the upper surface of the external terminal electrode 90 by an adhesive layer 44u.
  • the adhesive layer 44v has a third composition different from the second composition of the adhesive layer 46.
  • the third composition may be the same as the first composition of the adhesive layer 41.
  • the suitable material for the adhesive layer 44u is the same as for the adhesive layer 44v. It is preferable that the materials of both adhesive layers are the same.
  • Suitable materials for the additional frame 80u are the same as for the frame 80v. It is preferable that the materials of both frames are the same. According to this embodiment, there is no need for a technique for integrally molding the external terminal electrode 90 made of metal and the frame body 80 (FIG. 2) made of resin.
  • the additional frame 80u and the adhesive layer 44u may be omitted as long as the lid 300 (FIG. 11) can be attached with sufficient strength.
  • the paste layer 46P which finally becomes the adhesive layer 46 (FIG. 11), is applied onto the lid 300.
  • the semi-cured layer 46B is formed by semi-curing the paste layer 46P.
  • the state of progress of curing of the semi-cured layer 46B is a state often referred to as "B stage".
  • the lid 300 provided with the semi-cured layer 46B is arranged on the package 100v so that the semi-cured layer 46B faces the package 100v.
  • a load LD that presses the lid 300 and the package 100v against each other is applied.
  • the semi-cured layer 46B is heated. By this heating, the semi-cured layer 46B is further cured on the additional frame 80u of the package 100v.
  • the semi-cured layer 46B changes to the adhesive layer 46 (FIG. 11).
  • the additional frame body 80u of the package 100v and the lid body 300 are adhered to each other.
  • a power semiconductor module 900v (FIG. 11) can be obtained.
  • the above step can be applied to the above-described first embodiment in almost the same manner.
  • the adhesive layer 44v has a third composition different from the second composition of the adhesive layer 46.
  • the composition of the adhesive layer 46 can be made suitable for buffering the difference in thermal expansion and contraction between the package 100v and the lid 300 as compared with the composition of the adhesive layer 44v. Therefore, it is possible to prevent the occurrence of gloss leak due to damage caused by this difference in thermal expansion and contraction.
  • the third composition of the adhesive layer 44v may be the same as the first composition of the adhesive layer 41.
  • the manufacturing process of the package 100v can be simplified.
  • the step of forming the adhesive layer 46 includes a step of changing the semi-cured layer 46B provided on the lid 300 into the adhesive layer 46. Thereby, if the lid 300 provided with the semi-cured layer 46B is prepared in advance, the adhesive layer 46 can be easily formed.
  • Tables 1 and 2 below show the package configurations of Examples (Nos. 1 to 25) and Reference Examples (Nos. 101 to 120) and the results of the gross leak test conducted on them.
  • the "adhesive layer” is the adhesive layer between the heat sink plate and the frame
  • the “electrode” is the external terminal electrode.
  • the filler content of the adhesive layer was 82 wt% in the case of silica glass and 5 wt% in the case of silica (crystalline silica). Although detailed description is omitted, it is considered that there is no significant effect even if the silica glass content is changed within the range of 50 wt% to 90 wt% instead of 82 wt%. Further, even if the content of silica (crystalline silica) is changed within the range of 1 wt% to 10 wt% instead of 5 wt%, it is considered that there is no significant effect. When the filler for the frame was "Yes", the filler made of talc was added at 46 wt%.
  • the material of the electrode a copper alloy (Japanese Industrial Standards (JIS) C1940) or Kovar was used.
  • JIS Japanese Industrial Standards
  • a copper material of Japanese Industrial Standards (JIS) C1510 was used for the heat sink plate, and the heat sink plate had dimensions of 32 mm ⁇ 10 mm and a thickness dimension of 1.7 mm in a plan view.
  • the packages in Tables 1 and 2 were subjected to a gloss leak test after being left at a high temperature.
  • the high temperature standing was performed by leaving the package in an environment of 260 ° C. for 2 hours. This heating condition is close to the heating condition in the mounting process of the power semiconductor element.
  • the gloss leak test after leaving at a high temperature is performed by leaving the package without the lid attached in an environment of 260 ° C. for 2 hours, and then attaching the lid made of liquid crystal polymer with an adhesive at an adhesion temperature of 190 ° C. It was carried out for the constructed structure. It should be noted that this adhesion is only for the purpose of obtaining a sealed state for the gloss leak test, and a strong thermal load is not applied after this adhesion. Therefore, the composition of this adhesive need only be selected so that no leaks occur from the adhesive itself during this gloss leak test. For convenience, in this experiment, the same adhesive as the resin of the adhesive layer (second resin) used for joining the heat sink and the frame was used as this adhesive.
  • fluorinert TM which is a high boiling point solvent
  • fluorinert TM which is a high boiling point solvent
  • Table 3 shows the configurations of the power semiconductor modules of Examples (Nos. 201 to 204) and Comparative Examples (Nos. 205 to 208) and the results of temperature cycle tests performed on them.
  • the "adhesive layer" in the "package” column refers to the first adhesive layer (corresponding to the adhesive layer 41 in FIG. 11) and the third adhesive layer (corresponding to the adhesive layer 44u and the adhesive layer 44v in FIG. 11). That is, the "adhesive layer” in the "attachment of lid” column is the second adhesive layer (corresponding to the adhesive layer 46 in FIG. 11).
  • liquid crystal polymer As the material of the frame, liquid crystal polymer, PPS, and PEAK in which fillers were dispersed were used.
  • This liquid crystal polymer had a coefficient of thermal expansion of 12 ppm and an elastic modulus of 11.3 GPa.
  • PPS had a coefficient of thermal expansion of 17 ppm and an elastic modulus of 17.5 GPa.
  • PEAK had a coefficient of thermal expansion of 17 ppm and an elastic modulus of 10 GPa.
  • a material in which a filler made of silica glass was dispersed in an epoxy resin was used as the material of each of the first adhesive layer and the second adhesive layer.
  • Two kinds of compositions were used. Specifically, a composition in which a filler made of silica glass was dispersed in an epoxy resin in an amount of 80% by weight and a composition in which a filler made of silica glass was dispersed in an epoxy resin in an amount of 40% by weight were used.
  • the former filler 80% by weight
  • the latter had a coefficient of thermal expansion of 12 ppm / K and an elastic modulus of 17 GPa.
  • the latter (40% by weight of filler) had a coefficient of thermal expansion of 120 ppm / K and an elastic modulus of 4 GPa.
  • a copper alloy (Japanese Industrial Standards (JIS) C1940) was used as the material for the electrodes.
  • a copper material of Japanese Industrial Standards (JIS) C1510 was used for the heat sink plate, and the heat sink plate had dimensions of 32 mm ⁇ 10 mm and a thickness dimension of 1.7 mm in a plan view.
  • the temperature cycle was performed by 500 cycles of temperature change between -65 ° C and + 150 ° C. This temperature cycle mimics the temperature changes exposed to power semiconductor modules installed in harsh external environments. Therefore, packages used in harsh external environments need to be free of gross leaks after the temperature cycle.
  • the method of the gross leak test itself is the same as the method described above.
  • a liquid crystal polymer was used as the material for the lid. Further, in this experiment, in order to simplify the experiment, instead of the actual mounting process of the power semiconductor device, a step of heat-treating the package at 260 ° C. for 2 hours was performed to imitate the mounting process.
  • the result of the temperature cycle test is preferable by using a composition of the second adhesive layer different from that of the composition of the first adhesive layer and the third adhesive layer.
  • the elastic modulus of the second adhesive layer is preferably lower than the elastic modulus of the first adhesive layer and the third adhesive layer.
  • This experiment was carried out using a package (see FIG. 13) having a third adhesive layer (see the adhesive layer 44u and the adhesive layer 44v in FIG. 13), but the package without the third adhesive layer. Even with (see FIG. 2), it is considered that almost the same results as in this experiment can be obtained with respect to the selection of the first adhesive layer and the second adhesive layer.

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
PCT/JP2020/013235 2019-05-16 2020-03-25 パワー半導体モジュールおよびその製造方法 Ceased WO2020230457A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021519292A JP7159464B2 (ja) 2019-05-16 2020-03-25 パワー半導体モジュールおよびその製造方法
US17/449,692 US20220020651A1 (en) 2019-05-16 2021-10-01 Power semiconductor module and manufacturing method for power semiconductor module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-092933 2019-05-16
JP2019092933 2019-05-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/449,692 Continuation US20220020651A1 (en) 2019-05-16 2021-10-01 Power semiconductor module and manufacturing method for power semiconductor module

Publications (1)

Publication Number Publication Date
WO2020230457A1 true WO2020230457A1 (ja) 2020-11-19

Family

ID=73289019

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2020/013235 Ceased WO2020230457A1 (ja) 2019-05-16 2020-03-25 パワー半導体モジュールおよびその製造方法

Country Status (3)

Country Link
US (1) US20220020651A1 (https=)
JP (1) JP7159464B2 (https=)
WO (1) WO2020230457A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI858846B (zh) * 2022-08-09 2024-10-11 日商Ｎｇｋ電子器件股份有限公司 封裝體

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282751A (ja) * 2002-03-20 2003-10-03 Sumitomo Metal Electronics Devices Inc 高周波用パッケージならびに高周波用パワーモジュール基板及びその製造方法
JP2009513026A (ja) * 2005-10-24 2009-03-26 フリースケール セミコンダクター インコーポレイテッド 半導体構造及び組み立て方法
JP2018142617A (ja) * 2017-02-28 2018-09-13 三菱電機株式会社 半導体装置およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6909176B1 (en) * 2003-11-20 2005-06-21 Altera Corporation Structure and material for assembling a low-K Si die to achieve a low warpage and industrial grade reliability flip chip package with organic substrate
CN109643662B (zh) * 2016-08-19 2021-07-13 住友电木株式会社 芯片粘结膏和半导体装置
US11309231B2 (en) * 2017-02-21 2022-04-19 Mitsubishi Electric Corporation Semiconductor device
CN110326103B (zh) * 2017-02-28 2023-05-02 三菱电机株式会社 半导体装置及其制造方法
WO2018225511A1 (ja) * 2017-06-08 2018-12-13 Ｎｇｋエレクトロデバイス株式会社 蓋体、電子装置の製造方法および電子装置
NL2022669B1 (en) * 2019-03-01 2020-09-15 Ampleon Netherlands Bv Packaged electronic device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282751A (ja) * 2002-03-20 2003-10-03 Sumitomo Metal Electronics Devices Inc 高周波用パッケージならびに高周波用パワーモジュール基板及びその製造方法
JP2009513026A (ja) * 2005-10-24 2009-03-26 フリースケール セミコンダクター インコーポレイテッド 半導体構造及び組み立て方法
JP2018142617A (ja) * 2017-02-28 2018-09-13 三菱電機株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP7159464B2 (ja) 2022-10-24
US20220020651A1 (en) 2022-01-20
JPWO2020230457A1 (https=) 2020-11-19

Similar Documents

Publication Publication Date Title
JP4319591B2 (ja) 半導体パワーモジュール
CN107112316B (zh) 半导体模块
TWI415228B (zh) 半導體封裝結構、覆晶封裝、及半導體覆晶封裝的形成方法
JP5807348B2 (ja) 半導体装置およびその製造方法
JP6057927B2 (ja) 半導体装置
CN105190872B (zh) 半导体装置
JPWO2012070261A1 (ja) 半導体装置および半導体装置の製造方法
JP6057926B2 (ja) 半導体装置
JP6676079B2 (ja) 半導体装置およびその製造方法
CN104620373A (zh) 半导体装置
JP2014150203A (ja) パワーモジュール、およびパワーモジュールの製造方法
JP2011228336A (ja) 半導体装置および半導体装置の製造方法
US11901268B2 (en) Package with an electrode-attached frame supported by a heat sink, and method for manufacturing power semiconductor module provided therewith
JP7543703B2 (ja) 半導体装置
US11978682B2 (en) Package, and method for manufacturing power semiconductor module
JP2020155699A (ja) パッケージ、および、パワー半導体モジュールの製造方法
JP7159464B2 (ja) パワー半導体モジュールおよびその製造方法
US20230008518A1 (en) Semiconductor package and manufacturing method therefor
JP2012079962A (ja) 半導体装置および半導体装置の製造方法
JP2021150421A (ja) パッケージ
JP2023132461A (ja) パッケージ
US9397053B2 (en) Molded device with anti-delamination structure providing multi-layered compression forces
JP6157320B2 (ja) 電力用半導体装置、電力用半導体モジュール、および電力用半導体装置の製造方法
WO2021171881A1 (ja) パッケージ
US20230411229A1 (en) Semiconductor device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20805463

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2021519292

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20805463

Country of ref document: EP

Kind code of ref document: A1