WO2020204512A1 - 발광 소자를 갖는 유닛 픽셀, 픽셀 모듈 및 디스플레이 장치 - Google Patents

발광 소자를 갖는 유닛 픽셀, 픽셀 모듈 및 디스플레이 장치 Download PDF

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Publication number
WO2020204512A1
WO2020204512A1 PCT/KR2020/004284 KR2020004284W WO2020204512A1 WO 2020204512 A1 WO2020204512 A1 WO 2020204512A1 KR 2020004284 W KR2020004284 W KR 2020004284W WO 2020204512 A1 WO2020204512 A1 WO 2020204512A1
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Prior art keywords
light emitting
layer
light
disposed
connection
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Ceased
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PCT/KR2020/004284
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English (en)
French (fr)
Korean (ko)
Inventor
홍승식
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Seoul Semiconductor Co Ltd
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Seoul Semiconductor Co Ltd
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Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
Priority to CN202080023986.8A priority Critical patent/CN113632249A/zh
Priority to KR1020217025284A priority patent/KR102866492B1/ko
Priority to JP2021552961A priority patent/JP7520030B2/ja
Priority to MX2021010845A priority patent/MX2021010845A/es
Priority to MYPI2021005517A priority patent/MY209427A/en
Priority to EP20784459.8A priority patent/EP3951896B1/en
Priority to BR112021016971A priority patent/BR112021016971A2/pt
Publication of WO2020204512A1 publication Critical patent/WO2020204512A1/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Definitions

  • the present invention relates to a display device, and more particularly, to a unit pixel having a light emitting element, a pixel module having the same, and a display device having the same.
  • the light emitting device is a semiconductor device using a light emitting diode, which is an inorganic light source, and is used in various fields such as display devices, vehicle lamps, and general lighting.
  • Light-emitting diodes have the advantages of long life, low power consumption, and fast response speed, so they are rapidly replacing existing light sources.
  • a conventional light emitting diode has been mainly used as a backlight light source in a display device.
  • a display device that directly implements an image using a light emitting diode has been developed. Such displays are also referred to as micro LED displays.
  • a display device implements various colors using a mixed color of blue, green, and red.
  • the display device includes a plurality of pixels to implement various images, and each pixel includes blue, green, and red sub-pixels. The color of a specific pixel is determined through the color of these sub-pixels, and an image is implemented by a combination of these pixels.
  • micro LEDs are arranged on a two-dimensional plane corresponding to each sub-pixel, and accordingly, a large number of micro LEDs need to be disposed on one substrate.
  • the size of the micro LED is very small, for example, 200 microns or less and 100 microns or less, and various problems arise due to such a small size. In particular, it is difficult to handle light emitting diodes having a small size, so it is not easy to directly mount the light emitting diodes on a display panel.
  • Embodiments of the present disclosure provide a unit pixel suitable for mounting on a circuit board and a display device having the same.
  • Embodiments of the present disclosure provide a unit pixel having excellent reliability and a display device having the same.
  • the present disclosure also provides a unit pixel for preventing a defective light-emitting element from being mounted and a display device having the same.
  • a unit pixel includes: a transparent substrate; A plurality of light emitting devices arranged on the transparent substrate; An adhesive layer bonding the light-emitting elements to the transparent substrate; A step control layer covering the light emitting device and adhered to the adhesive layer; It is disposed on the step control layer and includes connection layers electrically connected to the light emitting devices, and the step control layer has an uneven pattern along an edge.
  • a unit pixel includes: a transparent substrate; At least three light-emitting elements arranged on the transparent substrate and emitting light of different colors; An adhesive layer bonding the light-emitting elements to the transparent substrate; A step control layer covering the light emitting device and adhered to the adhesive layer; It is disposed on the step control layer and includes connection layers electrically connected to the light emitting devices, and the at least three light emitting devices are arranged in a line.
  • a pixel module includes: a circuit board; A plurality of unit pixels disposed on the circuit board; And a cover layer covering the plurality of unit pixels, each of the unit pixels comprising: a transparent substrate; A plurality of light emitting devices arranged on the transparent substrate; An adhesive layer bonding the light-emitting elements to the transparent substrate; A step control layer covering the light emitting device and adhered to the adhesive layer; It is disposed on the step control layer and includes connection layers electrically connected to the light emitting devices, and the step control layer has an uneven pattern along an edge.
  • a display device includes: a panel substrate; And a plurality of pixel modules arranged on the panel substrate, wherein each of the pixel modules includes a circuit board, a plurality of unit pixels disposed on the circuit board, and a cover layer covering the plurality of unit pixels,
  • Each of the unit pixels may include a transparent substrate; A plurality of light emitting devices arranged on the transparent substrate; An adhesive layer bonding the light-emitting elements to the transparent substrate; A step control layer covering the light emitting device and adhered to the adhesive layer; It is disposed on the step control layer and includes connection layers electrically connected to the light emitting devices, and the step control layer has an uneven pattern along an edge.
  • FIG. 1 is a schematic plan view illustrating a display device according to an exemplary embodiment of the present disclosure.
  • FIG. 2A is a schematic plan view illustrating a light emitting device according to an exemplary embodiment of the present disclosure.
  • FIG. 2B is a schematic cross-sectional view taken along the cut line A-A of FIG. 2A.
  • 3A is a schematic plan view illustrating a unit pixel according to an exemplary embodiment of the present disclosure.
  • 3B is a schematic cross-sectional view taken along line B-B of FIG. 3A.
  • FIG. 4A is a schematic plan view illustrating a pixel module according to an exemplary embodiment of the present disclosure.
  • 4B is a schematic cross-sectional view taken along the cut line C-C of FIG. 4A.
  • 4C is a schematic rear view for describing a pixel module according to an exemplary embodiment of the present disclosure.
  • 4D is a schematic circuit diagram illustrating a pixel module according to an exemplary embodiment of the present disclosure.
  • 4E is a schematic circuit diagram illustrating a pixel module according to another exemplary embodiment of the present disclosure.
  • 5A, 5B, and 5C are schematic plan views illustrating various modified examples of a unit pixel, respectively.
  • 6A to 6K are schematic cross-sectional views illustrating a method of transferring light emitting devices according to an exemplary embodiment of the present disclosure.
  • FIG. 7A to 7L are schematic cross-sectional views illustrating a method of transferring light emitting devices according to another exemplary embodiment of the present disclosure.
  • 8A to 8K are schematic cross-sectional views for explaining a method of transferring light emitting devices according to another exemplary embodiment of the present disclosure.
  • 9A to 9O are schematic plan views for explaining various modified examples of a light emitting device.
  • FIG. 10 is a schematic cross-sectional view illustrating a unit pixel according to another exemplary embodiment of the present disclosure.
  • FIG. 11 is a schematic cross-sectional view illustrating a pixel module according to another exemplary embodiment of the present disclosure.
  • a unit pixel includes: a transparent substrate; A plurality of light emitting devices arranged on the transparent substrate; An adhesive layer bonding the light-emitting elements to the transparent substrate; A step control layer covering the light emitting device and adhered to the adhesive layer; It is disposed on the step control layer and includes connection layers electrically connected to the light emitting devices, and the step control layer has an uneven pattern along an edge.
  • the plurality of light-emitting elements may include at least three light-emitting elements that emit light of different colors, and the at least three light-emitting elements may be arranged in a line.
  • the plurality of light-emitting devices may include light-emitting devices that emit red, green, and blue colors.
  • the light emitting devices include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first and second conductivity type semiconductor layers, respectively; And a first electrode pad and a second electrode pad disposed on the light emitting structure, wherein the step adjustment layer has openings exposing the first and second electrode pads, and the connection layers control the step It may be electrically connected to the first and second electrode pads through openings in the layer.
  • each of the light emitting devices may include a plurality of connection tips.
  • connection tips of any one of the light emitting devices may be aligned at different positions from the connection tips of the other light emitting devices.
  • connection tips arranged on each light emitting device may be arranged to be asymmetric with respect to at least one alignment direction.
  • the unit pixel may further include a light blocking layer disposed between the adhesive layer and the transparent substrate, and the light blocking layer may have a window that transmits light generated by the light emitting device.
  • the width of the window may be narrower than the width of the light emitting device. In another embodiment, the width of the window may be wider than that of the light emitting device.
  • the unit pixel may further include a protective layer covering the step control layer and the contact layers, and the protective layer may have openings positioned on the contact layers.
  • the unit pixel may further include bumps disposed in openings of the protective layer, and each of the bumps may be electrically connected to the contact layers.
  • a unit pixel includes: a transparent substrate; At least three light-emitting elements arranged on the transparent substrate and emitting light of different colors; An adhesive layer bonding the light-emitting elements to the transparent substrate; A step control layer covering the light emitting device and adhered to the adhesive layer; It is disposed on the step control layer and includes connection layers electrically connected to the light emitting devices, and the step control layer has an uneven pattern along an edge.
  • the transparent substrate may be a sapphire substrate.
  • a pixel module includes: a circuit board; A plurality of unit pixels disposed on the circuit board; And a cover layer covering the plurality of unit pixels, wherein each of the unit pixels includes: a transparent substrate; A plurality of light emitting devices arranged on the transparent substrate; An adhesive layer bonding the light-emitting elements to the transparent substrate; A step control layer covering the light emitting device and adhered to the adhesive layer; It is disposed on the step control layer and includes connection layers electrically connected to the light emitting devices, and the step control layer has an uneven pattern along an edge.
  • the unit pixel may further include a protective layer covering the step adjustment layer and the contact layers, and the protective layer may have openings positioned on the contact layers.
  • the pixel module may further include a bonding material bonding the light emitting devices and the circuit board, and the bonding material may fill at least some of the openings of the protective layer.
  • the pixel module may further include a bonding material bonding the light emitting devices and the circuit board, and the unit pixel further includes bumps disposed in openings of the protective layer, and the The circuit board includes pads exposed on an upper surface, and the bonding material may bond the bumps to the pads.
  • the circuit board may further include bottom pads disposed on the bottom, and the number of the bottom pads may be less than the number of the pads.
  • the number of floor pads may be 1/2 of the number of pads.
  • the plurality of light-emitting devices may include at least three light-emitting devices that emit light of different colors, and the at least three light-emitting devices may be arranged in a line.
  • a display device includes: a panel substrate; And a plurality of pixel modules arranged on the panel substrate, wherein each of the pixel modules includes a circuit board, a plurality of unit pixels disposed on the circuit board, and a cover layer covering the plurality of unit pixels,
  • Each of the unit pixels may include a transparent substrate; A plurality of light emitting devices arranged on the transparent substrate; An adhesive layer bonding the light-emitting elements to the transparent substrate; A step control layer covering the light emitting device and adhered to the adhesive layer; It is disposed on the step control layer and includes connection layers electrically connected to the light emitting devices, and the step control layer has an uneven pattern along an edge.
  • FIG. 1 is a schematic plan view illustrating a display device according to an exemplary embodiment of the present disclosure.
  • a display apparatus 10000 includes a panel substrate 2100 and a plurality of pixel modules 1000.
  • the panel substrate 2100 may include a circuit for passive matrix driving or active matrix driving.
  • the panel substrate 2100 may include wirings and resistors therein, and in another embodiment, the panel substrate 2100 may include wirings, transistors, and capacitors.
  • the panel substrate 2100 may also have pads on its upper surface that can be electrically connected to the arranged circuit.
  • Each pixel module 1000 may include a circuit board (1001 of FIG. 4A) and a plurality of unit pixels 100 disposed on the circuit board 1001.
  • each unit pixel 100 includes a plurality of light emitting elements 10 (10a, 10b, 10c).
  • the light-emitting elements 10 may include light-emitting elements 10a, 10b, and 10c that emit light of different colors.
  • Light-emitting elements 10a, 10b, and 10c in each unit pixel 100 may be arranged in a line as shown in FIG. 1.
  • the light emitting devices 10a, 10b, and 10c may be arranged in a vertical direction with respect to a display screen on which an image is implemented.
  • each component of the display apparatus 10000 will be described in detail in the order of the light emitting element 10, the unit pixel 100, and the pixel module 1000 disposed in the display apparatus 10000.
  • FIG. 2A is a schematic plan view illustrating a light emitting device according to an exemplary embodiment of the present disclosure
  • FIG. 2B is a schematic cross-sectional view taken along a cut line A-A of FIG. 2A.
  • the light emitting device 10 (10a, 10b, 10c) emits light including a first conductivity type semiconductor layer 21, an active layer 23, and a second conductivity type semiconductor layer 25. It contains a structure. Further, the light emitting device 10 may include an ohmic contact layer 27, an insulating layer 29, a first electrode pad 31, and a second electrode pad 33. Meanwhile, the connection tips 55b may be disposed on the side of the first conductivity type semiconductor layer 21 to face the first electrode pad 31 and the second electrode pad 33.
  • the light emitting structure that is, the first conductivity type semiconductor layer 21, the active layer 23, and the second conductivity type semiconductor layer 25 may be grown on the substrate.
  • the substrate may be a variety of substrates that can be used for semiconductor growth, such as a gallium nitride substrate, a GaAs substrate, a Si substrate, a sapphire substrate, especially a patterned sapphire substrate.
  • the growth substrate may be separated from the semiconductor layers using techniques such as mechanical polishing, laser lift-off, and chemical lift-off.
  • the present invention is not limited thereto, and a part of the substrate may remain to form at least a part of the first conductivity type semiconductor layer 21.
  • the semiconductor layers are gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), aluminum gallium indium phosphide (aluminum gallium indium). phosphide, AlGaInP), or gallium phosphide (GaP) may be included.
  • AlGaAs gallium arsenide
  • GaAsP gallium arsenide phosphide
  • AlGaInP aluminum gallium indium phosphide
  • GaP gallium phosphide
  • the semiconductor layers are indium gallium nitride (InGaN), gallium nitride (GaN), gallium phosphide (GaP), aluminum gallium indium phosphide (AlGaInP), or aluminum gallium phosphide (AlGaP). It may include.
  • the semiconductor layer may include gallium nitride (GaN), indium gallium nitride (InGaN), or zinc selenide (ZnSe).
  • GaN gallium nitride
  • InGaN indium gallium nitride
  • ZnSe zinc selenide
  • the first conductivity type and the second conductivity type have opposite polarities.
  • the first conductivity type is n-type
  • the second conductivity type is p-type
  • the first conductivity type is p-type
  • the second conductivity type is n-type. do.
  • the first conductivity-type semiconductor layer 21, the active layer 23, and the second conductivity-type semiconductor layer 25 are grown on a substrate in a chamber using a known method such as metal-organic chemical vapor deposition (MOCVD). I can.
  • the first conductivity-type semiconductor layer 21 contains n-type impurities (eg, Si, Ge, Sn), and the second conductivity-type semiconductor layer 25 includes p-type impurities (eg, Mg, Sn). Sr, Ba).
  • the first conductivity type semiconductor layer 21 may include GaN or AlGaN including Si as a dopant
  • the second conductivity type semiconductor layer 25 includes GaN or AlGaN including Mg as a dopant. Can include.
  • the first conductivity-type semiconductor layer 21 and the second conductivity-type semiconductor layer 25 are each illustrated as being a single layer, but these layers may be multiple layers, and may also include a superlattice layer.
  • the active layer 23 may include a single quantum well structure or a multiple quantum well structure, and the composition ratio of the nitride-based semiconductor is adjusted to emit a desired wavelength. For example, the active layer 23 may emit blue light, green light, red light, or ultraviolet light.
  • the second conductivity type semiconductor layer 25 and the active layer 23 may have a mesa (M) structure and may be disposed on the first conductivity type semiconductor layer 21.
  • the mesa M includes a second conductivity type semiconductor layer 25 and an active layer 23, and may include a part of the first conductivity type semiconductor layer 21 as shown in FIG. 2B.
  • the mesa M is located on a partial region of the first conductivity type semiconductor layer 21, and a top surface of the first conductivity type semiconductor layer 21 may be exposed around the mesa M.
  • the first conductivity type semiconductor layer 21 may have irregularities due to surface texturing.
  • Surface texturing may be performed, for example, by patterning using a dry etching process.
  • cone-shaped protrusions may be formed, the height of the cone may be 2.5 to 3 ⁇ m, the cone spacing may be 1.5 to 2 ⁇ m, and the bottom diameter of the cone may be about 3 ⁇ m.
  • Color difference can be reduced by forming irregularities on the surface of the first conductivity type semiconductor layer 21.
  • All of the first to third light emitting devices 10a, 10b, and 10c may perform surface texturing on the first conductivity type semiconductor layer, but is not limited thereto, and some light emitting devices may not perform surface texturing.
  • the left and right color difference may be reduced by adopting the first conductivity type semiconductor layer surface-textured as described above.
  • the mesa M may have a through hole 25a exposing the first conductivity type semiconductor layer 21.
  • the through hole 25a may be disposed close to one edge of the mesa M, but is not limited thereto, and may be disposed in the center of the mesa M.
  • the ohmic contact layer 27 is disposed on the second conductivity type semiconductor layer 25 to make ohmic contact with the second conductivity type semiconductor layer 25.
  • the ohmic contact layer 27 may be formed of a single layer or multiple layers, and may be formed of a transparent conductive oxide layer or a metal layer.
  • the transparent conductive oxide film include ITO or ZnO
  • the metal film include metals such as Al, Ti, Cr, Ni, and Au, and alloys thereof.
  • the insulating layer 29 covers the mesa M and the ohmic contact layer 27. Further, the insulating layer 29 may cover the top and side surfaces of the first conductivity type semiconductor layer 21 exposed around the mesa M. Meanwhile, the insulating layer 29 may have an opening 29a exposing the ohmic contact layer 27 and an opening 29b exposing the first conductivity type semiconductor layer 21 in the through hole 25a.
  • the insulating layer 29 may be formed as a single layer or multiple layers of a silicon oxide layer or a silicon nitride layer. Further, the insulating layer 29 may include an insulating reflector such as a distributed Bragg reflector.
  • the first electrode pad 31 and the second electrode pad 33 are disposed on the insulating layer 29.
  • the second electrode pad 33 may be electrically connected to the ohmic contact layer 27 through the opening 29a, and the first electrode pad 31 is the first conductive semiconductor layer 21 through the opening 29b. ) Can be electrically connected.
  • the first and/or second electrode pads 31 and 33 may be formed of a single layer or a multilayer metal.
  • metals such as Al, Ti, Cr, Ni, Au, and alloys thereof may be used.
  • connection tips 55b may be formed on the light emitting device 10. As shown in FIG. 2A, four connection tips 55b may be disposed on the light emitting structure.
  • connection tip 55b is disposed approximately at the center of the light emitting element 10
  • two connection tips 55b are disposed at a position overlapping the second electrode pad 33
  • One connection tip 55b is disposed at a position overlapping the pad 31.
  • the three connection tips 55b are arranged in a triangular shape on the periphery, and the connection tip 55b arranged in the center of the light emitting element 10 may be located in a triangle formed by the three connection tips 55b. have.
  • connection tips disposed at a position overlapping the second electrode pad 33 may be disposed near one edge of the second electrode pad 33 and may be disposed to face each other with respect to an elongated straight line passing through the center.
  • connection tip disposed at a position overlapping the first electrode pad 31 may be disposed near one edge of the first electrode pad 31, and may be disposed away from an elongated straight line passing through the center.
  • connection tips 55b may have a right-angled triangular shape, and the connection tips disposed at the center of the light emitting device 10 may be disposed in a direction opposite to the other connection tips, as shown.
  • connection tip overlapping the first electrode pad 31 is formed first, followed by the connection tip near the center, and finally Connection tips overlapping the second electrode pad 33 may be formed. Accordingly, the light-emitting elements 10 can be easily separated from the connection part, and cracks that may occur in the light-emitting element can be prevented.
  • the light-emitting element 10 when picking up or mounting the light-emitting element 10, the light-emitting element 10 may be picked up or mounted unstable according to the positions of the connection tips, and thus cracks may occur.
  • the connection tips on both sides of the light-emitting element 10 and near the center of the light-emitting element 10, the light-emitting element 10 can be stably picked up or mounted, thereby preventing cracks generated in the light-emitting element. I can.
  • the total area of the four connection tips 55b may be 0.8% compared to the area on the plane of the light emitting device 10.
  • connection tips 55b will be briefly described with reference to FIGS. 2A and 2B, but the present disclosure is not limited thereto, and the connection tips 55b may be arranged in various shapes at various positions.
  • the light-emitting elements 10a, 10b, and 10c may all include connection tips 55b that are identically disposed, but the present disclosure is not limited thereto.
  • the connection tips 55b disposed on the first light emitting device 10a may be disposed at a different position from the connection tips 55b disposed on the second and third light emitting devices 10b and 10c. I can.
  • the location and generation of the connection tips 55b, and the transfer method of the light emitting elements 10 will be described later.
  • the light-emitting device 10 may further include a layer having an additional function in addition to the above-described layer.
  • a layer having an additional function in addition to the above-described layer.
  • various layers such as a reflective layer that reflects light, an additional insulating layer to insulate a specific component, and an anti-solder layer that prevents solder diffusion may be further included.
  • a mesa may be formed in various shapes, and the positions and shapes of the first and second electrode pads 31 and 33 may also be variously changed. Further, the ohmic contact layer 27 may be omitted, and the second electrode pad 33 may directly contact the second conductivity type semiconductor layer 25.
  • the first electrode pad 31 is shown to be directly connected to the first conductivity type semiconductor layer 21, a contact layer is first formed on the first conductivity type semiconductor layer 21 exposed to the via hole 25a. Also, the first electrode pad 31 may be connected to the contact layer.
  • FIG. 3A is a schematic plan view for explaining the unit pixel 100 according to an exemplary embodiment of the present disclosure
  • FIG. 3B is a schematic cross-sectional view taken along the cut line B-B of FIG. 3A.
  • the unit pixel 100 includes a transparent substrate 121, first to third light emitting devices 10a, 10b, and 10c, a light blocking layer 123, an adhesive layer 125, and a step difference.
  • the control layer 127, connection layers 129a, 129b, 129c, 129d, bumps 133a, 133b, 133c, 133d, and a protective layer 131 may be included.
  • the unit pixel 100 provides one pixel including the first to third light emitting elements 10a, 10b, and 10c.
  • the first to third light-emitting elements 10a, 10b, and 10c emit light of different colors, each of which corresponds to a sub-pixel.
  • the transparent substrate 121 is a light-transmitting substrate such as PET, glass substrate, quartz, and sapphire substrate.
  • the transparent substrate 121 is disposed on the light emitting surface of the display device (10000 in FIG. 1 ), and light emitted from the light emitting elements 10a, 10b, and 10c is emitted to the outside through the transparent substrate 121.
  • the transparent substrate 121 may include irregularities PR on the light emitting surface. The light emission efficiency can be improved through the irregularities (PR), and more uniform light can be emitted.
  • the transparent substrate 121 may also include an anti-reflective coating, or may include an anti-glare layer or may be treated with an anti-glare treatment.
  • the transparent substrate 121 may have a thickness of, for example, 50 um to 500 um.
  • the transparent substrate 121 Since the transparent substrate 121 is disposed on the light emitting surface, the transparent substrate 121 does not include a circuit. However, the present disclosure is not limited thereto, and may include a circuit.
  • one unit pixel 100 is formed on one transparent substrate 121, a plurality of unit pixels 100 may be formed on one transparent substrate 121.
  • the light blocking layer 123 may include an absorbing material that absorbs light, such as carbon black.
  • the light absorbing material prevents the light generated by the light emitting elements 10a, 10b, and 10c from leaking to the side in the region between the transparent substrate 121 and the light emitting elements 10a, 10b, and 10c. Improves the contrast.
  • the light blocking layer 123 may have a window 123a for a light traveling path so that light generated from the light emitting devices 10a, 10b, and 10c is incident on the transparent substrate 121, and for this purpose, the transparent substrate 121 ) May be patterned to expose the transparent substrate 121.
  • the width of the window 123a may be narrower than the width of the light emitting device, but is not limited thereto, and may be greater than or equal to the width of the light emitting device.
  • the window 123a of the light blocking layer 123 also defines the alignment position of the light-emitting elements 10a, 10b, and 10c. Accordingly, separate alignment markers for defining alignment positions of the light-emitting elements 10a, 10b, and 10c may be omitted.
  • the present disclosure is not limited thereto, and in order to provide a position for aligning the light emitting elements 10a, 10b, and 10c, alignment markers are provided on the transparent substrate 121 or the light blocking layer 123 or the adhesive layer 125 ) May be provided.
  • the adhesive layer 125 is attached on the transparent substrate 121.
  • the adhesive layer 125 may cover the light blocking layer 123.
  • the adhesive layer 125 may be attached to the entire surface of the transparent substrate 121, but is not limited thereto, and may be attached to a partial area to expose an area near the edge of the transparent substrate 121.
  • the adhesive layer 125 is used to attach the light emitting elements 10a, 10b, and 10c to the transparent substrate 121.
  • the adhesive layer 125 may fill the window formed on the light blocking layer 123.
  • the adhesive layer 125 may be formed as a light-transmitting layer, and transmits light emitted from the light-emitting elements 10a, 10b, and 10c.
  • the adhesive layer 125 may include a diffuser such as SiO2, TiO2, or ZnO to diffuse light.
  • the light diffusing material prevents the light emitting elements 10a, 10b and 10c from being observed from the light emitting surface.
  • the first to third light emitting devices 10a, 10b, and 10c are disposed on the transparent substrate 121.
  • the first to third light emitting devices 10a, 10b, and 10c may be attached to the transparent substrate 121 by the adhesive layer 125.
  • the first to third light emitting devices 10a, 10b, and 10c may be disposed corresponding to the windows 123a of the light blocking layer 123.
  • alignment markers may be added to provide alignment positions of the light emitting devices 10a, 10b, and 10c.
  • the first to third light-emitting devices 10a, 10b, and 10c may be, for example, a green light-emitting device, a red light-emitting device, and a blue light-emitting device. Since the specific configurations of each of the first to third light emitting devices 10a, 10b, and 10c are the same as those described with reference to FIGS. 2A and 2B, detailed descriptions are omitted.
  • the first to third light emitting devices 10a, 10b, and 10c may be arranged in a line, as shown in FIG. 3A.
  • the transparent substrate 121 is a sapphire substrate
  • the sapphire substrate may include clean cut surfaces (eg, m plane) and non-cutting planes (eg, a plane) by a crystal plane according to the cutting direction.
  • the clean cut surfaces of the sapphire substrate 121 may be parallel to the alignment direction of the light emitting devices 10a, 10b, and 10c.
  • clean cut surfaces eg, m plane
  • two other cut planes eg, a plane
  • clean cut surfaces are disposed on the left and right of the observer who observes the display.
  • the first to third light emitting devices 10a, 10b, and 10c may be those described with reference to FIGS. 2A and 2B, but are not limited thereto, and various light emitting devices having a horizontal or flip chip structure may be used. .
  • the step adjustment layer 127 covers the first to third light emitting devices 10a, 10b, and 10c.
  • the step adjustment layer 127 has openings 127a exposing the first and second electrode pads 31 and 33 of the light emitting devices 10a, 10b, and 10c.
  • the step adjustment layer 127 is required to form the connection layers 129a, 129b, 129c, 129d and the bumps 133a, 133b, 133c, 133d.
  • the step adjustment layer 127 may be formed to equalize the height of the position where the bumps 133a, 133b, 133c 133d are formed.
  • the step adjustment layer 127 may be formed of, for example, photosensitive polyimide.
  • the step control layer 127 may have a concave-convex pattern along the edge as shown in FIG. 3A.
  • the shape of the concave-convex pattern may vary. Also, the depth and width of the concave portion formed in the uneven pattern, or the depth and width of the convex portion may be adjusted.
  • the uneven pattern formed on the step adjustment layer 127 may reduce the compressive stress applied by the step adjustment layer 127 to the adhesive layer 125 to prevent peeling of the step adjustment layer 127 and the adhesive layer 125.
  • the step adjustment layer 127 may be formed to partially expose the edge of the adhesive layer 125 as shown in FIG. 3A, but is not limited thereto. In particular, the step adjustment layer 127 may be disposed in an area surrounded by an edge of the adhesive layer 125.
  • connection layers 129a, 129b, 129c, and 129d are formed on the step control layer 127.
  • the connection layers 129a, 129b, 129c, and 129d are the first and second electrode pads of the first to third light emitting devices 10a, 10b, and 10c through the openings 127a of the step adjustment layer 127 It can be connected to field (31, 33).
  • connection layer 129a is electrically connected to the first conductivity type semiconductor layer of the first light emitting element 10a
  • the connection layer 129b is the first conductivity type semiconductor layer of the second light emitting element 10b
  • connection layer 129c may be electrically connected to the first conductivity type semiconductor layer of the third light emitting device 10c
  • the connection layer 129d includes the first to third light emitting devices 10a
  • the second conductive semiconductor layers 10b and 10c) may be electrically connected in common.
  • the connection layers 129a, 129b, 129c, and 129d may be formed together on the step control layer 127, and may include, for example, Au.
  • the bumps 133a, 133b, 133c, and 133d are formed on the connection layers 129a, 129b, 129c, and 129d, respectively.
  • the first bump 133a may be electrically connected to the first conductivity-type semiconductor layer of the first light emitting element 10a through the connection layer 129a
  • the second bump 133b may be a connection layer ( 129b) may be electrically connected to the first conductivity-type semiconductor layer of the second light-emitting element 10b
  • the third bump 133c is the first light-emitting element 10c of the third light-emitting element 10c through the connection layer 129c. It can be electrically connected to the conductive type semiconductor layer.
  • the fourth bump 133d may be electrically connected in common to the second conductive type semiconductor layers of the first to third light emitting devices 10a, 10b, and 10c through the connection layer 129d.
  • the bumps 133a, 133b, 133c, 133d are formed of metal and/or metal alloys such as AuSn, SnAg, Sn, CuSn, CuN, CuAg, Sb, Ni, Zn, Mo, Co, and solder. I can.
  • the protective layer 131 may cover side surfaces of the bumps 133a, 133b, 133c, and 133d, and may cover the step adjustment layer 127. In addition, the protective layer 131 may cover the adhesive layer 125 exposed around the step control layer 127.
  • the protective layer 131 may be formed of, for example, a photosensitive solder resist (PSR), and thus, the protective layer 131 is first patterned through photographs and development, and then the bumps 133a, 133b, 133c, 133d are Can be formed.
  • PSR photosensitive solder resist
  • the protective layer 131 is formed to have openings exposing the connection layers 129a, 129b, 129c, 129d, and the bumps 133a, 133b, 133c, 133d are openings of the protective layer 131 Can be formed within.
  • the bumps 133a, 133b, 133c, and 133d may be omitted.
  • the protective layer 131 may be formed of a light absorbing material such as a white reflective material or a black epoxy to prevent light leakage.
  • FIG. 4A is a schematic plan view for explaining the pixel module 1000 according to an embodiment of the present disclosure
  • FIG. 4B is a schematic cross-sectional view taken along the perforated line CC of FIG. 4A
  • FIG. 4C is a It is a rear view
  • FIG. 4D is a circuit diagram of the pixel module 1000.
  • the pixel module 1000 includes a circuit board 1001 and unit pixels 100 arranged on the circuit board 1001. Furthermore, the pixel module 1000 may further include a cover layer 1010 covering the unit pixels 100.
  • the circuit board 1001 may have a circuit for electrically connecting the panel board 2100 and the light emitting devices 10a, 10b, and 10c. Circuits in the circuit board 1001 may be formed in a multilayer structure.
  • the circuit board 1001 may also include a passive circuit for driving the light emitting elements 10a, 10b, and 10c by a passive matrix driving method or an active circuit for driving the active matrix driving method.
  • the circuit board 1001 may include pads 1003 exposed on the surface. The pads 1003 may be arranged corresponding to bumps in the unit pixels 100 to be mounted thereon.
  • the unit pixels 100 may be aligned on the circuit board 1001.
  • the unit pixels 100 may be arranged in a 2 ⁇ 2 matrix as shown in FIG. 4A, but are not limited thereto, and are arranged in various matrices such as 2 ⁇ 3, 3 ⁇ 3, 4 ⁇ 4, 5 ⁇ 5, etc. Can be.
  • the unit pixels 100 are bonded to the circuit board 1001 by the bonding material 1005.
  • the bonding material 1005 may bond the bumps 133a, 133b, 133c, and 133d to the pads 1003.
  • the bonding material 1005 may be omitted.
  • the cover layer 1010 covers the plurality of unit pixels 100.
  • the cover layer 1010 may prevent optical interference between the unit pixels 100 to improve contrast of the display device.
  • the cover layer 1010 may be formed of, for example, a dry-film type solder resist (DFSR), a photoimageable solder resist (PSR), a black material (BM), or an epoxy molding compound (EMC).
  • DFSR dry-film type solder resist
  • PSR photoimageable solder resist
  • BM black material
  • EMC epoxy molding compound
  • the cover layer 1010 may be formed using, for example, lamination, spin coating, slit coating, or printing.
  • the display apparatus 10000 may be provided by mounting the pixel modules 1000 shown in FIGS. 4A and 4B on the panel substrate 2100 of FIG. 1.
  • the circuit board 1001 has bottom pads connected to the pads 1003.
  • the floor pads may be arranged to correspond to the pads 1003 one-to-one, but the number of floor pads may be reduced through common connection.
  • a pixel module 1000 including unit pixels 100 arranged in a 2 ⁇ 2 matrix will be described with reference to FIGS. 4C and 4D, for example.
  • 4C is a rear view of the pixel module 1000, and bottom pads C1, C2, R1, R2, G1, G2, B1 and B2 of the circuit board 1001 are shown. Since the pixel modules 1000 are arranged in a 2 ⁇ 2 matrix, a total of four pixel modules are arranged on the circuit board 1001. In addition, three light-emitting elements 10a, 10b, and 10c are disposed on each pixel module 1000, and four bumps 133a, 133b, 133c, and 133d are disposed. Accordingly, 16 pads 1003 corresponding to bumps of the four unit pixels 100 will be provided on the circuit board 1001. In contrast, only eight bottom pads may be disposed, and these eight bottom pads are connected to the panel substrate 2100 to individually drive each of the light emitting elements 10a, 10b, and 10c.
  • 4D shows a schematic circuit diagram in which each of the light emitting elements 10a, 10b, and 10c is connected to the bottom pads C1, C2, R1, R2, G2, G2, B1, and B2 in one embodiment.
  • the bottom pad C1 is commonly connected to the cathodes of the light-emitting elements 10a, 10b, and 10c disposed in the left column, and the bottom pad C2 is the light-emitting elements 10a disposed in the right column. , 10b, 10c) are commonly connected to the cathodes.
  • the bottom pad B1 is connected to the anodes of the first light emitting devices 10a, and the bottom pad B1 is connected to the anodes of the second light emitting devices 10b.
  • the pad G1 may be connected, and the bottom pad R1 may be connected to the anodes of the third light emitting elements 10c.
  • the bottom pad B2 is connected to the anodes of the first light emitting devices 10a, and the bottom pad B2 is connected to the anodes of the second light emitting devices 10b.
  • the pad G2 may be connected, and the bottom pad R2 may be connected to the anodes of the third light emitting elements 10c.
  • the bottom pads R1, G1, B1, R2, G2, and B2 represent pads connected to the red, green, and blue light emitting devices, respectively.
  • the arrangement of the red, green, and blue light emitting devices may be changed, and accordingly, the positions to which the bottom pads R1, G1, B1, R2, G2, and B2 are connected may also be changed.
  • the circuit diagram of FIG. 4D shows that the first light emitting devices 10a are blue light emitting devices, the second light emitting devices 10b are green light emitting devices, and the third light emitting devices 10c are red light emitting devices. In anticipation of this, floor pads are indicated.
  • the first light-emitting devices 10a may be blue light-emitting devices
  • the third light-emitting devices 10c may be red light-emitting devices.
  • the bottom pads R1 and R2 and the bottom pad B1 , B2) positions can be interchanged.
  • the bottom pads C1 and C2 are commonly connected to the cathodes of the light emitting elements in each row, and each of the bottom pads R1, G1, B1, R2, B2, and G2 emit two light emission.
  • each of the light emitting elements 10a, 10b, and 10c By being connected in common to the anodes of the elements, it is possible to independently drive each of the light emitting elements 10a, 10b, and 10c while reducing the total number of bottom pads.
  • the bottom pads C1 and C2 are connected to the cathodes of the light emitting devices, and the bottom pads R1, G1, B1, R2, B2, G2 are connected to the anodes of the light emitting device.
  • the bottom pads C1 and C2 are connected to the anodes of the light emitting devices, and the bottom pads R1, G1, B1, R2, B2, G2 are the light emitting devices. It can also be connected to the canods of.
  • the pixel module 1000 is described when the unit pixels 100 are arranged in a 2 ⁇ 2 matrix, but when the unit pixels 100 are arranged in another matrix such as 3 ⁇ 3 or 5 ⁇ 5, Also, the number of floor pads can be reduced by using a common connection circuit.
  • the light-emitting elements 10a, 10b, and 10c in the pixel module 1000 can be individually driven by a driving IC disposed on the panel substrate 2100, and an image is implemented by a plurality of pixel modules 1000 Can be.
  • FIGS. 5A, 5B, and 5C are schematic plan views illustrating various modified examples of a unit pixel, respectively.
  • FIGS. 5A, 5B and 5C illustrate various modified examples of the uneven pattern of the step adjustment layer 127.
  • the step adjustment layer 127a may have a relatively wide uneven pattern.
  • relatively narrow and slender portions are disposed at the corners of the step adjustment layer 127a, and accordingly, it is possible to prevent stress from being concentrated on the corners of the step adjustment layer 127a.
  • the concave portion and the convex portion of the step adjustment layer 127a may have an arc shape having a predetermined radius, and the concave portion and the convex portion may have the same or different radii.
  • the bottom portion of the concave portion of the step adjustment layer 127b may be flat.
  • the uneven pattern of the step adjustment layer 127c may have a sawtooth shape.
  • the uneven pattern of the step adjustment layer 127 may be variously deformed, and in particular, may be formed to prevent stress from being concentrated on edges while the step adjustment layer 127 contracts.
  • connection tip 55b on the opposite side of the light emitting structure surface on which the first and second electrode pads 31 and 33 are disposed, but the connection tip Reference numeral 55b may be disposed on the same side as the surface on which the first and second electrode pads 31 33 are disposed.
  • the position at which the connection tip 55b is formed is related to the transfer method of the light emitting devices 10, and can be understood through the transfer method of the light emitting device 10 described later.
  • 6A to 6K are schematic cross-sectional views illustrating a method of transferring a light emitting device according to an exemplary embodiment of the present disclosure.
  • a light emitting device 10 is formed on a substrate 51.
  • the substrate 51 may be a substrate for growing the light emitting device 10.
  • the substrate 51 may be, for example, a sapphire substrate for growing an AlInGaN-based semiconductor layer, a GaN substrate, or a GaAs substrate for growing an AlInGaP-based semiconductor layer.
  • a sapphire substrate or a GaN substrate may be used, and when the light emitting device 10 is a red light emitting device, a GaAs substrate may be used. .
  • a first mask layer 53 is formed on a substrate 51 to cover a plurality of light emitting devices 10.
  • the first mask layer 53 is formed to completely cover the plurality of light emitting devices 10, and may be formed to have a predetermined thickness on upper surfaces of the light emitting devices 10.
  • a plurality of holes H are formed in the first mask layer 53.
  • Each of the plurality of holes H may be formed on the plurality of light emitting devices 10, and at least one hole H may be formed on each of the light emitting devices 10.
  • three holes H are formed on each of the light emitting devices 10, and the three holes H are arranged asymmetrically with respect to at least one direction in which the light emitting devices 10 are arranged.
  • the three holes H are arranged to be asymmetric with respect to a direction perpendicular to the direction in which the light emitting devices 10 are arranged in the drawing.
  • the first mask layer 53 may be formed of a photosensitive material, and a plurality of holes H may be formed through a photo lithography process.
  • the plurality of holes H may be formed through exposure and development processes, but is not limited thereto, and an etching process may be used. As shown, the plurality of holes H may be formed in a triangular shape. However, the plurality of holes H is not necessarily limited to three.
  • connection layer 55 is formed on the first mask layer 53.
  • the connection layer 55 is formed on the first mask layer 53 while filling the plurality of holes H formed in the first mask layer 53. Since at least one hole (H) is formed on each light emitting device 10, the connection layer 55 is connected to the light emitting device 10 through at least one hole (H) formed on the light emitting device 10. I can. While forming the connection layer 55, a connection part 55a connected to the light emitting device 10 is formed together by filling the hole H.
  • connection layer 55 may be formed of an organic material such as poly dimethylpolysiloxane (PDMS), epoxy, acrylic, or color polyimide, but is not limited thereto.
  • PDMS poly dimethylpolysiloxane
  • the connection layer 55 may have a light transmittance of 90% or more, and a refractive index of 1.4 to 1.7.
  • the first temporary substrate 57 is coupled on the connection layer 55.
  • the first temporary substrate 57 may be a polymer substrate such as PET, PEN, PI sheet, or the like, or may be a substrate such as glass, PC, or PMMA.
  • the first temporary substrate 57 is coupled to the upper portion of the connection layer 55, air bubbles that may be generated in the connection layer 55 are removed in a vacuum state, and the temperature is lower than the melting point of the first mask layer 53.
  • a curing process of the connection layer 55 may be performed. In this process, the first temporary substrate 57 may be coupled to the connection layer 55.
  • the substrate 51 is removed from the light emitting devices 10 as shown in FIG. 6F.
  • the substrate 51 may be removed through a laser lift-off process or a wet etching process.
  • the substrate 51 may be removed by a laser lift-off process or a chemical lift-off process, and when the substrate 51 is a GaAs substrate, the GaAs substrate is removed by a wet etching process. Can be.
  • the first mask layer 53 is removed from the light emitting devices 10.
  • the first mask layer 53 may be removed through a method such as acetone, a dedicated striper, or etching.
  • the light emitting devices 10 are connected to and maintained by the connection layer 55 by at least one connection part 55a.
  • the second temporary substrate 59 is bonded to the lower portions of the light emitting devices 10.
  • the second temporary substrate 59 may be a rubber or UV sheet, or a polymer substrate such as PET, PEN, or PI sheet, or a substrate such as glass, PC, PMMA, or the like.
  • the second temporary substrate 59 When the second temporary substrate 59 is coupled to the light emitting devices 10, as shown in FIG. 6I, the light emitting devices 10 are connected to the connection layer 55 using the second temporary substrate 59. Separate. By applying an external force to the second temporary substrate 59 to which the light emitting elements 10 are coupled in a direction opposite to the first temporary substrate 57, that is, in a downward direction, at least one connection part connected to the light emitting elements 10 ( 55a) is cut, and the light emitting devices 10 are separated from the connection layer 55.
  • an external force applied to the second temporary substrate 59 may be applied from one side of the second temporary substrate 59 in a direction perpendicular to the connection layer 55. Accordingly, each of the light emitting devices 10 can be separated from the connection layer 55 in a manner in which at least one connection part 55a connected to each light emitting device 10 is sequentially disconnected from one side of the second temporary substrate 59. .
  • connection tip 55b which is a remaining residue as the connection part 55a is cut, may be formed on each light emitting device 10. Therefore, the connection tip 55b is the same material as the connection layer 55, and the thickness of the connection tips 55b may be irregular and different from each other as it is formed while the connection part 55a is cut off by an external force.
  • the pickup unit 70 may include, for example, an elastomer stamp.
  • the pick-up unit 70 picks up and transfers some of the plurality of light-emitting elements 10, and selectively picks up the light-emitting elements 10 according to an interval to be disposed on the transparent substrate 121. Accordingly, as shown, the pickup unit 70 does not pick up the adjacent light emitting devices 10 together, but picks up the light emitting devices 10 separated by a predetermined distance at once.
  • the spacing of the light emitting devices 10 to be picked up may vary according to the spacing of pixels in the transparent substrate 121 to which the light emitting devices 10 are to be transferred.
  • the transparent substrate 121 may be cut for each pixel to form the unit pixel 100. Accordingly, the light emitting elements 10 are transferred onto the transparent substrate 121 to correspond to each unit pixel 100.
  • the pickup unit 70 picks up the light emitting devices 10 to match the intervals between the unit pixels 100, and the first light emitting device 10a, the second light emitting device 10b, and One of the third light emitting devices 10c may be picked up so that it is disposed.
  • the light emitting devices 10 are picked up with the first and second electrode pads 31 and 33 disposed thereon, and may be transferred onto the transparent substrate 121 in this state. Accordingly, light generated by the light emitting structure may be emitted to the outside through the transparent substrate 121.
  • the light emitting devices 10 may be mounted on a circuit board, and in this case, the first and second electrode pads 31 and 33 may be mounted while facing the circuit board.
  • an additional temporary substrate may be used in the process of mounting the light emitting devices 10 on the circuit board using the pickup unit 70. That is, the light-emitting elements 10 picked up through the pickup unit 70 may be firstly disposed on an additional temporary substrate at intervals between the unit pixels 100. Thereafter, the light emitting elements 10 disposed on the additional temporary substrate may be transferred to the circuit board at once. Accordingly, the light emitting devices 10 may be transferred so that the first and second electrode pads 31 and 33 are bonded to the circuit board.
  • FIGS. 7A to 7L are schematic cross-sectional views illustrating a method of transferring a light emitting device according to another exemplary embodiment.
  • a light emitting device 10 is grown on a substrate 51.
  • the substrate 51 may be a substrate for growing semiconductor layers of the light emitting device 10.
  • a blue light emitting device or a green light emitting device a sapphire substrate or a GaN substrate may be used.
  • a red light emitting device a GaAs substrate may be used.
  • a first mask layer 53 is formed on a substrate 51 to cover a plurality of light emitting devices 10.
  • the first mask layer 53 is formed to cover all of the plurality of light emitting devices 10 and may be formed to have a predetermined thickness on top surfaces of the light emitting devices 10.
  • a plurality of holes H are formed in the first mask layer 53. At least one hole H may be formed on each light emitting device 10.
  • three holes H are formed on each of the light emitting devices 10, and the three holes H are arranged asymmetrically with respect to at least one direction in which the light emitting devices 10 are arranged.
  • the three holes H are arranged to be asymmetric with respect to a direction perpendicular to the direction in which the light emitting devices 10 are arranged in the drawing.
  • the first mask layer 53 may be formed of a photosensitive material, and a plurality of holes H may be formed through a photo lithography process.
  • the holes H may be formed through a photo and development process, but is not limited thereto, and an etching process may be used.
  • the plurality of holes H may be formed in a triangular shape.
  • connection layer 55 is formed on the first mask layer 53.
  • the connection layer 55 is formed on the first mask layer 53 while filling the plurality of holes H formed in the first mask layer 53. Since a plurality of holes (H) are each formed on the light emitting device (10), the connection layer (55) is connected to the light emitting devices (10) through at least one hole (H) formed on the light emitting device (10). I can. A part of the connection layer 55 fills at least one hole H formed on the light emitting device 10 to form the connection part 55a.
  • connection layer 55 may be formed of an organic material such as poly dimethylpolysiloxane (PDMS), epoxy, acrylic, or color polyimide, but is not limited thereto.
  • PDMS poly dimethylpolysiloxane
  • the connection layer 55 may have a light transmittance of 90% or more, and a refractive index of 1.4 to 1.7.
  • the first temporary substrate 57 is coupled on the connection layer 55.
  • the first temporary substrate 57 may be a polymer substrate such as PET, PEN, PI sheet, or the like, or may be a substrate such as glass, PC, or PMMA.
  • a film part 61 and a buffer part 63 may be disposed between the first temporary substrate 57 and the connection layer 55, respectively.
  • the film part 61 is disposed on the connection layer 55
  • the buffer part 63 is disposed on the film part 61
  • the first temporary substrate 57 is disposed on the buffer part 63 Can be placed.
  • the buffer unit 63 may be formed of a material that melts by heat or UV irradiation.
  • connection layer 55 When the first temporary substrate 57 is coupled to the upper portion of the connection layer 55, air bubbles that may be generated in the connection layer 55 are removed in a vacuum state, and the temperature is lower than the melting point of the first mask layer 53. A curing process of the connection layer 55 may be performed. In this process, the first temporary substrate 57 may be coupled to the connection layer 55.
  • the substrate 51 is removed from the light emitting devices 10.
  • the substrate 51 may be removed through a laser lift-off process or a wet etching process.
  • a laser lift-off process or a wet etching process For example, in the case of a sapphire substrate, it can be removed by a laser lift-off process or a chemical lift-off process, and the GaAs substrate can be removed by a wet etching process.
  • the first mask layer 53 is removed from the light emitting devices 10.
  • the first mask layer 53 may be removed through a method such as acetone, a dedicated striper, or dry etching. Accordingly, as shown, the light emitting devices 10 are connected to and maintained in the connection layer 55 by at least one connection part 55a connected to each light emitting device 10.
  • the first temporary substrate 57 coupled to the upper portion is removed.
  • the first temporary substrate 57 may be removed by irradiating heat or UV.
  • the buffer part 63 is formed of a material that melts by heat or UV irradiation, the first temporary substrate 57 may be removed without damaging the film part 61.
  • a second temporary substrate 59 is coupled under the light emitting devices 10.
  • the second temporary substrate 59 may be a rubber or UV sheet, or a polymer substrate such as PET, PEN, or PI sheet, or a substrate such as glass, PC, PMMA, or the like.
  • the second temporary substrate 59 When the second temporary substrate 59 is coupled to the light emitting elements 10, the light emitting elements 10 are separated from the connection layer 55 using the second temporary substrate 59 as shown in FIG. 7J. .
  • the second temporary substrate 59 By applying an external force to the second temporary substrate 59 to which the light-emitting elements 10 are coupled in a downward direction, at least one connection part 55a connected to the light-emitting elements 10 is cut, and the light-emitting elements 10 are connected. Separated in layer 55.
  • An external force applied to the second temporary substrate 59 may be applied to one side of the second temporary substrate 59 in a direction perpendicular to the connection layer 55. Accordingly, each of the light emitting devices 10 may be separated from the connection layer 55 in a manner in which the connection portions 55a connected to each light emitting device 10 are sequentially disconnected.
  • connection tip 55b may be formed on each light emitting device 10, which is a residue remaining when the connection part 55a is cut off.
  • the connection tip 55b is the same material as the connection layer 55, and as the connection part 55a is cut off by an external force, the thickness of the connection tips 55b may be different from each other. In addition, as shown, the thickness of the connection tips 55b may be smaller than the thickness of the first and second electrode pads 31 and 33.
  • some of the light emitting elements 10 disposed on the second temporary substrate 59 are transferred to another substrate using the pickup unit 70.
  • the substrate to be transferred may be the transparent substrate 121, but is not limited thereto. After the light emitting devices 10 are transferred on the transparent substrate 121 in units of the unit pixels 100, the transparent substrate 121 may be cut in units of the unit pixels 100.
  • 8A to 8K are schematic cross-sectional views illustrating a method of transferring a light emitting device according to another embodiment.
  • a light emitting device 10 is formed on a substrate 51.
  • the substrate 51 is a substrate for growing semiconductor layers of the light emitting device 10 and may be a sapphire substrate, a GaN substrate, or a GaAs substrate.
  • the substrate 51 may be a sapphire substrate when the light emitting device 10 is a blue light emitting device or a green light emitting device, and may be a GaAs substrate when the light emitting device 10 is a red light emitting device.
  • a first mask layer 53 covering a plurality of light emitting devices 10 is formed on a substrate 51.
  • the first mask layer 53 is formed to cover all of the plurality of light emitting devices 10 and may be formed to have a predetermined thickness on top surfaces of the light emitting devices 10.
  • the first mask layer 53 may be formed of, for example, a photosensitive material.
  • the first temporary substrate 57 is coupled on the first mask layer 53.
  • the first temporary substrate 57 may be a polymer substrate such as PET, PEN, PI sheet, or the like, or may be a substrate such as glass, PC, or PMMA.
  • a buffer unit 63 may be disposed between the first temporary substrate 57 and the first mask layer 53. Accordingly, the buffer unit 63 may be disposed on the first mask layer 53 and the first temporary substrate 57 may be disposed on the buffer unit 63.
  • the substrate 51 is removed from the light emitting devices 10.
  • the substrate 51 may be removed through a laser lift-off process or a wet etching process.
  • the substrate 51 is a sapphire substrate, the substrate 51 is removed by a laser lift-off process or a chemical lift-off process, and when the substrate 51 is a GaAs substrate, the substrate 51 is removed by a wet etching process. I can.
  • the lower surfaces of the light emitting devices 10 and the lower surfaces of the first mask layer 53 may be exposed.
  • a second mask layer 65 is formed under the exposed light emitting devices 10 and the first mask layer 53.
  • the second mask layer 65 covers the lower surfaces of the light emitting devices 10 and may be formed to have a thickness thinner than the first mask layer 53.
  • a plurality of holes H are formed in the second mask layer 65. At least one hole H may be formed under each light emitting device 10.
  • three holes H are formed under each light emitting device 10, and the three holes H are disposed asymmetrically with respect to at least one direction in which the light emitting devices 10 are arranged.
  • the three holes H are arranged to be asymmetric with respect to a direction perpendicular to the arrangement direction of the light emitting devices 10 shown in the drawing.
  • the second mask layer 65 may be formed of a photosensitive material in the same manner as the first mask layer 53, and a plurality of holes H may be formed through a photo lithography process. As shown, the plurality of holes H may be formed in a triangular shape.
  • connection layer 55 is formed under the second mask layer 65.
  • the connection layer 55 is formed under the second mask layer 65 while filling the plurality of holes H formed in the second mask layer 65. Since a plurality of holes H are respectively formed under the light emitting device 10, the connection layer 55 can be connected to the light emitting devices 10 through at least one hole H formed under the light emitting device 10. I can.
  • Connection portions 55a filling the hole H are formed together with the connection layer 55. The connection portions 55a may directly contact the first conductivity type semiconductor layer 23.
  • connection layer 55 may include an organic material such as poly dimethylpolysiloxane (PDMS), epoxy, acrylic, or color polyimide, but is not limited thereto.
  • PDMS poly dimethylpolysiloxane
  • the connection layer 55 may have a light transmittance of 90% or more, and a refractive index of 1.4 to 1.7.
  • the second temporary substrate 59 is coupled to the lower portion of the connection layer 55.
  • the second temporary substrate 59 may be a polymer substrate, such as PET, PEN, or PI sheet, which is the same as the first temporary substrate 57, or may be a substrate such as glass, PC, or PMMA.
  • the first temporary substrate 57 coupled to the upper portion is removed.
  • the first temporary substrate 57 can be removed by irradiating heat or UV.
  • the buffer unit 63 is formed of a material that melts by heat or UV irradiation, the first temporary substrate 57 may be removed from the first mask layer 53.
  • the first mask layer 53 and the second mask layer 65 are removed from the light emitting devices 10.
  • the first mask layer 53 and the second mask layer 65 may be removed through a method such as acetone, a dedicated striper, or dry etching.
  • the light emitting devices 10 are connected to and maintained in the connection layer 55 by at least one connection part 55a connected to each light emitting device 10.
  • the light emitting devices 10 are formed with a connection layer 55 and a connection part 55a on the second temporary substrate 59. It is placed in a connected state by Some of the light emitting devices 10 disposed on the second temporary substrate 59 may be transferred to another substrate using the pickup unit 70.
  • the light emitting devices 10 picked up by the pickup part 70 are separated from the connection layer 55 by disconnecting the connection part 55a from the connection layer 55, respectively.
  • the pickup part 70 picks up the light-emitting elements 10 from the top of the light-emitting elements 10, and the connection part 55a is disposed under the light-emitting element 10. Accordingly, at least one connection tip 55b may be formed under each of the light emitting devices 10.
  • the light emitting elements 10 picked up by the pickup unit 70 may be transferred to the transparent substrate 121, and the transparent substrate 121 is cut in units of individual unit pixels 100 to form unit pixels ( 100) can be provided.
  • the light-emitting elements 10 are transferred to the transparent substrate 121 by the light-emitting element transfer method described above.
  • the adhesive layer 125 may be previously formed on the transparent substrate 121, and the light emitting devices 100 may be attached to the transparent substrate 121 by the adhesive layer 125.
  • the step adjustment layer 127 The connection layers 129a, 129b, 129c, 129d, the protective layer 131 and the bumps 133a, 133b, 133c, 133d are formed, and then, by cutting the transparent substrate 121, FIGS. 3A and 3B
  • the unit pixel 100 described with reference to is manufactured.
  • the pixel module 1000 may be manufactured by arranging the unit pixels 100 on the circuit board 1001, and the pixel modules 1000 may be formed on a panel substrate.
  • the display apparatus 10000 may be provided by aligning on the 2100.
  • 9A to 9O are plan views illustrating modified examples of the light emitting device 10.
  • connection tip 55b is disposed on the opposite surface to face the first and second electrode pads 31 and 33.
  • the position of the connection tip 55b is described as a position relative to the first and second electrode pads 31 and 33.
  • the connection tip 55b and the first and second electrode pads 31 and 33 are disposed on opposite surfaces of the light emitting element 10, and they do not contact each other.
  • connection tips 55b formed on the light emitting device 10 are provided, and are disposed between the first and second electrode pads 31 and 33. That is, three connection tips 55b are formed on the upper surface of the light emitting device 10. The first and second electrode pads 31 and 33 are formed on the lower surface of the light emitting device 10.
  • the shape of the three connection tips 55b may be formed in a triangular shape.
  • the total area of the three connection tips 55b may be, for example, about 1.26% compared to the area on the plane of the light emitting device 10.
  • connection tips 55b formed on the light emitting device 10 are provided, and are disposed outside the first and second electrode pads 31 and 33.
  • the two connection tips 55b are disposed near the first electrode pad 31 and are disposed near both outer corners of the first electrode pad 31.
  • the remaining connection tip 55b is disposed outside the second electrode pad 33.
  • the two connection tips 55b disposed on the side of the first electrode pad 31 may be disposed in a direction different from the direction in which the first and second electrode pads 31 and 33 are disposed.
  • the total area of the three connection tips 55b may be, for example, about 0.65% compared to the area on the plane of the light emitting device 10.
  • connection tips 55b formed on the light emitting device 10 are provided, and are widely spread on the plane of the light emitting device 10. That is, two of the four connection tips 55b are disposed at a position overlapping the first and second electrode pads 31 and 33, and the other two are the first and second electrode pads 31 and 33. ) Are placed between them. At this time, the two connection tips 55b disposed at positions overlapping the first and second electrode pads 31 and 33 may be disposed at the centers of the first and second electrode pads 31 and 33, respectively. .
  • connection tips 55b may be formed in a rhombus shape, and the four connection tips 55b may be disposed at each corner of the rhombus shape.
  • the total area of the four connection tips 55b may be, for example, about 1.22% compared to the area on the plane of the light emitting device 10.
  • connection tips 55b formed on the light emitting device 10 are provided. Two of the four connection tips 55b are arranged to partially overlap the first and second electrode pads 31 and 33, and the other two are the first and second electrode pads 31 and 33. Is placed in between.
  • the connection tips 55b of the fourth modified example may be disposed at relatively small intervals compared to the connection tips 55b of the third modified example.
  • connection tips 55b may be formed in a rhombus shape, and the four connection tips 55b may be disposed at each corner of the rhombus shape.
  • the total area of the four connection tips 55b may be, for example, about 1.22% compared to the area on the plane of the light emitting device 10.
  • connection tips 55b formed on the light emitting device 10 are provided.
  • the connection tips 55b of the fifth modified example may be disposed in the same manner as the connection tips 55b of the third modified example.
  • the total area of the connection tips 55b of the fifth modified example is formed larger than the connection tips 55b of the third modified example, and may be, for example, about 2.71% compared to the area on the plane of the light emitting device 10. .
  • connection tips 55b formed on the light emitting device 10 are provided.
  • the connection tips 55b of the sixth modified example may be disposed in the same manner as the connection tips 55b of the fourth modified example.
  • the total area of the connection tips 55b of the sixth modified example is formed larger than the connection tips 55b of the fourth modified example, and may be, for example, about 2.71% compared to the area on the plane of the light emitting device 10. .
  • connection tips 55b formed on the light emitting device 10 are provided, and are disposed at a position overlapping the first and second electrode pads 31 and 33. . That is, the two connection tips 55b are disposed at a position overlapping the first electrode pad 31, and the other connection tip 55b is disposed at a position overlapping the second electrode pad 33.
  • the two connection tips 55b disposed on the side of the first electrode pad 31 may be disposed in a direction different from the direction in which the first and second electrode pads are disposed.
  • the total area of the three connection tips 55b may be, for example, about 0.58% compared to the area on the plane of the light emitting device 10.
  • connection tips 55b formed on the light emitting device 10 are provided, and are disposed at a position partially overlapping with the first and second electrode pads 31 and 33. .
  • One of the three connection tips 55b is disposed at a position partially overlapped with the first electrode pad 31, and the other two connection tips 55b are disposed at a position partially overlapped with the second electrode pad 33.
  • the three connection tips 55b may be formed in a triangular shape, and the three connection tips 55b may be disposed at each corner of a triangular shape.
  • the connection tips 55b of the eighth modified example are formed to be larger than the connection tips 55b of the first modified example, and may be, for example, about 2.76% compared to the planar area of the light emitting device 10.
  • connection tips 55b formed on the light emitting device 10 are provided, and are disposed at positions overlapping with the first and second electrode pads 31 and 33. Two of the four connection tips 55b are disposed at a position overlapping the first electrode pad 31, and the other two are disposed at a position overlapping the second electrode pad 33.
  • the connection tips 55b of the ninth modified example may be formed in a triangular shape.
  • the total area of the connection tips 55b may be, for example, about 1.68% compared to the area on the plane of the light emitting device 10.
  • connection tips 55b formed on the light emitting device 10 are provided, and are disposed at a position overlapping the first and second electrode pads 31 and 33. .
  • One of the three connection tips 55b is disposed at a position overlapping the first electrode pad 31, and the other two are disposed at a position overlapping the second electrode pad 33.
  • the total area of the connection tips 55b may be, for example, about 1.26% compared to the area on the plane of the light emitting device 10.
  • connection tips 55b formed on the light emitting device 10 are provided, and are disposed at a position overlapping the first and second electrode pads 31 and 33. .
  • Two of the three connection tips 55b are disposed at a position overlapping the first electrode pad 31, and the other is disposed at a position overlapping the second electrode pad 33.
  • the total area of the connection tips 55b may be, for example, about 1.26% compared to the area on the plane of the light emitting device 10.
  • connection tip 55b formed on the light emitting device 10 is disposed between the first and second electrode pads 31 and 33.
  • the connection tip 55b is disposed at a base 55ba having a length in a direction perpendicular to the direction in which the first and second electrode pads 31 and 33 are disposed, and at one end of the base 55ba in the longitudinal direction, A first extension part 55bb extending in the direction of the electrode pad 31 and a second extension part 55bc disposed at the other end in the length direction of the base 55ba and extending in the direction of the second electrode pad 33 are provided.
  • each of the first and second extension parts 55bb and 55bc may be formed in a shape whose width becomes narrower as the distance increases from the base 55ba.
  • the total area of the connection tip 55b may be, for example, about 1.92% compared to the area on the plane of the light emitting device 10.
  • connection tip 55b formed on the light emitting device 10 is disposed between the first and second electrode pads 31 and 33.
  • the connection tip 55b includes a base 55ba having a length perpendicular to the direction in which the first and second electrode paddles are arranged, and a first electrode pad 31 extending from the center portion of the base 55ba. It is formed to have one extension part 55bb and a second extension part 55bc extending in the direction of the second electrode pad 33 from the central part of the base 55ba.
  • the first and second extension parts 55bb and 55bc may be formed in a shape whose width is narrowed so as to move away from the base 55ba, respectively.
  • the total area of the connection tip 55b may be, for example, about 1.161% compared to the area on the plane of the light emitting device 10.
  • connection tips 55b formed on the light emitting device 10 are provided. Two of the four connection tips 55b are disposed at a position overlapping the first and second electrode pads 31 and 33, and the other two are between the first and second electrode pads 31 and 33. Is placed in In this case, the connection tips 55b disposed on the first and second electrode pads 31 and 33 may be disposed at the edges of the first and second electrode pads 31 and 33, respectively.
  • connection tip 55b disposed to overlap the first electrode pad 31 may be disposed at a position close to the second electrode pad 33 from the first electrode pad 31, and the second electrode pad 33
  • the connection tip 55b disposed to overlap with may be disposed at a position close to the first electrode pad 31 from the second electrode pad 33.
  • the total area of the four connection tips 55b may be, for example, about 0.49% compared to the area on the plane of the light emitting device 10.
  • connection tips 55b formed on the light emitting device 10 are formed.
  • One connection tip is disposed approximately at the center of the light emitting device 10
  • two connection tips are disposed at a position overlapping the second electrode pad 33
  • one connection tip is disposed at a position overlapping the first electrode pad 31
  • the tip is placed.
  • the three connection tips 55b are arranged in a triangular shape on the periphery, and the connection tip 55b arranged in the center of the light emitting element 10 may be located in a triangle formed by the three connection tips 55b. have.
  • connection tips 55b disposed at a position overlapping the second electrode pad 33 are disposed near one edge of the second electrode pad 33 and may be disposed to face each other with respect to an elongated straight line passing through the center. .
  • connection tip disposed at a position overlapping the first electrode pad 31 is disposed near one edge of the first electrode pad 31 and may be disposed away from an elongated straight line passing through the center.
  • connection tips may have a right-angled triangular shape, and the connection tip disposed in the center of the light-emitting element 10 may be disposed in a direction opposite to the other connection tips as shown.
  • connection tip overlapping the first electrode pad 31 is formed first, then a connection tip near the center is formed, and finally, the second electrode pad 33 Connection tips overlapping on may be formed. Accordingly, the light-emitting elements can be easily separated from the connection part, and cracks that may occur in the light-emitting elements can be prevented.
  • the light-emitting element 10 when picking up or mounting the light-emitting element 10, the light-emitting element 10 may be picked up or mounted unstable according to the positions of the connection tips, and thus cracks may occur.
  • the connection tips on both sides of the light-emitting element 10 and near the center of the light-emitting element 10, the light-emitting element 10 can be stably picked up or mounted, thereby preventing cracks generated in the light-emitting element. I can.
  • the total area of the four connection tips 55b may be, for example, about 0.8% compared to the area on the plane of the light emitting device 10.
  • the success rate of picking up the light emitting device 10 is shown to be satisfactory. I can confirm.
  • FIG. 10 is a schematic cross-sectional view illustrating a unit pixel 100a according to another exemplary embodiment of the present disclosure.
  • the unit pixel 100a according to the present embodiment is substantially similar to the unit pixel 100 described with reference to FIGS. 3A and 3B, but the bumps 133a, 133b, 133c, and 133d are omitted. There is a difference.
  • the protective layer 131 has openings 131a exposing the connection layers 129a, 129b, 129c, and 129d.
  • the openings 131a are disposed to correspond to positions of the bumps 133a, 133b, 133c, and 133d of the unit pixel 100 described with reference to FIGS. 3A and 3B.
  • the thickness of the protective layer 131 in the present embodiment may be about 1/2 or less, further, about 1/3 or less of the thickness of the protective layer 131 in the unit pixel 100. .
  • the thickness of the protective layer 131 in the unit pixel 100 may be about 45 ⁇ m, and in this embodiment, the thickness of the protective layer 131 may be 15 ⁇ m.
  • FIG. 11 is a schematic cross-sectional view illustrating a pixel module 1000a according to another exemplary embodiment of the present disclosure.
  • the pixel module 1000a on which the unit pixels 100a of FIG. 10 are mounted will be described.
  • the pixel module 1000a is substantially similar to the pixel module 1000 described with reference to FIGS. 4A and 4B, but since the unit pixel 100a does not have bumps, a bonding material ( There is a difference in that 1005) fills the openings 131a of the protective layer 131.
  • the bonding material 1005 may completely or partially fill the openings 131a of the protective layer 131.
  • cavities may be formed in the openings 131a.
  • a plurality of pixel modules 1000a may be aligned on the panel substrate 2100 to provide a display device 10000.

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PCT/KR2020/004284 2019-03-29 2020-03-30 발광 소자를 갖는 유닛 픽셀, 픽셀 모듈 및 디스플레이 장치 Ceased WO2020204512A1 (ko)

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CN202080023986.8A CN113632249A (zh) 2019-03-29 2020-03-30 具有发光元件的单元像素、像素模组及显示装置
KR1020217025284A KR102866492B1 (ko) 2019-03-29 2020-03-30 발광 소자를 갖는 유닛 픽셀, 픽셀 모듈 및 디스플레이 장치
JP2021552961A JP7520030B2 (ja) 2019-03-29 2020-03-30 発光素子を有するユニットピクセル、ピクセルモジュール及びディスプレイ装置
MX2021010845A MX2021010845A (es) 2019-03-29 2020-03-30 Unidad de pixel que comprende diodos emisores de luz, un modulo de unidad de pixel y un dispositivo de visualizacion.
MYPI2021005517A MY209427A (en) 2019-03-29 2020-03-30 Unit pixel comprising light emitting diodes, unit pixel module, and display device
EP20784459.8A EP3951896B1 (en) 2019-03-29 2020-03-30 Unit pixel comprising light emitting diodes, unit pixel module, and display device
BR112021016971A BR112021016971A2 (pt) 2019-03-29 2020-03-30 Unidade de pixel, módulo de unidade de pixel e aparelho de exibição

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US201962826033P 2019-03-29 2019-03-29
US62/826,033 2019-03-29
US16/831,973 US11355686B2 (en) 2019-03-29 2020-03-27 Unit pixel having light emitting device, pixel module and displaying apparatus
US16/831,973 2020-03-27

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US20190074206A1 (en) * 2017-09-06 2019-03-07 Ultra Display Technology Corp. Target substrate with micro semiconductor structures

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KR20210134309A (ko) 2021-11-09
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US20220302364A1 (en) 2022-09-22
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US20200313056A1 (en) 2020-10-01
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US20230352646A1 (en) 2023-11-02

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