WO2020199299A1 - 一种在非硅基底上制造压电薄膜谐振器的方法 - Google Patents

一种在非硅基底上制造压电薄膜谐振器的方法 Download PDF

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WO2020199299A1
WO2020199299A1 PCT/CN2019/085437 CN2019085437W WO2020199299A1 WO 2020199299 A1 WO2020199299 A1 WO 2020199299A1 CN 2019085437 W CN2019085437 W CN 2019085437W WO 2020199299 A1 WO2020199299 A1 WO 2020199299A1
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thin film
piezoelectric thin
film resonator
copper
silicon substrate
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English (en)
French (fr)
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陈达
王鸿飞
王鹏
张小军
李忠丽
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山东科技大学
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/081—Shaping or machining of piezoelectric or electrostrictive bodies by coating or depositing using masks, e.g. lift-off
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/1051—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/10513—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/10516—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type

Definitions

  • the invention relates to the technical field of micro-electromechanical systems, in particular to a method for manufacturing a piezoelectric thin film resonator on a non-silicon substrate.
  • Piezoelectric film resonator is a new type of microelectromechanical system device developed in recent years. At present, this type of device has been used to construct gigahertz band radio frequency filters and highly sensitive biochemical sensors. Thin film bulk acoustic wave devices have small size, high Q value and are very suitable for use as filter elements in flexible communication circuits, or as high-sensitivity sensing elements in microfluidic chips or wearable electronic systems. According to its standing wave resonance principle, a self-supporting suspended structure or Bragg acoustic reflection layer needs to be constructed under the piezoelectric oscillating stack. This structure usually adopts bulk silicon/surface silicon process in silicon-based semiconductor manufacturing technology or periodic multilayer thin film deposition on a silicon substrate. Obviously, the current device process is not compatible with the manufacturing process of flexible electronic and microfluidic devices based on non-silicon materials such as polydimethylsiloxane (PDMS), plastics, and glass.
  • PDMS polydimethylsiloxane
  • the first type of method directly manufactures piezoelectric thin film resonators on a flexible substrate or a flexible film on a silicon substrate, and peels it off.
  • a Chinese patent with publication number CN 103929149 A a flexible piezoelectric film bulk acoustic resonator and a preparation method thereof.
  • the method directly deposits a bottom electrode, a piezoelectric film and a top electrode layer on a flexible substrate to form a film bulk acoustic wave resonator.
  • the invention patent with publication number 106788318A discloses a method for manufacturing a thin-film bulk acoustic resonator on a flexible substrate, which includes the following steps: (1) A water-soluble polymer film layer and a polyimide are sequentially coated on a silicon substrate Amine film layer; (2) Fabrication of thin film bulk acoustic resonator structure on top of polyimide film; (3) Fabrication of metal pillars on the surface of the upper electrode of the film bulk acoustic wave resonator; (4) Electrode on the film bulk acoustic wave resonator Coating polymethyl methacrylate film on the surface; (5) Coating and curing the flexible substrate glue used on the silicon substrate; (6) Putting the entire structure in water to separate the device from the silicon substrate; (7) Use an etching solution to remove the metal column; (8) Place the device in an acetone solution to dissolve the polymethyl methacrylate film to form an air gap; (9) Remove the polyimide under the film bulk acoustic
  • Another type of method uses the fabrication of piezoelectric thin film resonators on a silicon substrate, and then transfers it to a non-silicon substrate such as a flexible material.
  • a non-silicon substrate such as a flexible material.
  • the method mainly uses a polymer seal to transfer the use of an air gap structure piezoelectric thin film resonator on a silicon substrate to a flexible substrate, where the air gap structure is fabricated on the flexible substrate to realize the self-supporting of the resonator.
  • the main disadvantage of the above-mentioned technical solution is that for the first type of method, the rigidity of the flexible substrate is poor, and the device manufacturing directly on the flexible substrate will affect the processing accuracy and film quality.
  • the device preparation after coating polyimide on a silicon substrate can solve the problems of processing accuracy and film quality, but the types of flexible substrates that can be used are limited.
  • one side of the manufactured thin-film bulk acoustic wave resonator directly contacts a thicker flexible substrate, and the dissipation of the acoustic wave causes the performance of the device to deteriorate.
  • the transferred device and the target surface need to be treated before the use of the polymer seal to control the adhesion, which may damage the existing chemical functional groups on the surface of the device or substrate. It is difficult to use; the pressure control of the large-area polymer stamp is uneven, the number of devices transferred at one time is limited, and the fine structure is easily damaged.
  • the present invention provides a method for manufacturing a piezoelectric thin film resonator on a non-silicon substrate.
  • a method for manufacturing a piezoelectric thin film resonator on a non-silicon substrate characterized in that it comprises the following steps:
  • the electric thin film resonator includes the polyimide support layer to release and peel from the silicon wafer;
  • the copper etching solution in step (7) does not cause corrosion to the piezoelectric thin film resonator.
  • the thickness of the copper film in step (1) is 200-500 nm.
  • the method for depositing the copper film in step (1) is magnetron sputtering.
  • titanium is sputter deposited on the silicon wafer before sputtering copper.
  • the thickness of the electroplated copper layer is 1.5-3 times the sum of the thickness of the piezoelectric film, the upper electrode and the lower electrode in the piezoelectric thin film resonator.
  • the thickness of the polyimide layer is 3-5 times that of the electroplated copper layer.
  • the polyimide heat treatment is carried out in a vacuum or nitrogen atmosphere, and the heat treatment temperature is 250-400°C.
  • the non-silicon substrate is a malleable organic polymer, cloth, silk fabric, rubber or medical tape.
  • the malleable high molecular organic substance is polydimethylsiloxane, polyurethane, acrylate, polyethylene terephthalate, acrylic acid, polyvinyl alcohol, pectin or polyethylene naphthalate.
  • the temperature of the hot water in step (9) is 50-90°C.
  • the main device preparation process on the silicon substrate can improve the processing accuracy and the quality of the piezoelectric film.
  • the air gap area made under the piezoelectric film resonator improves the performance of the device;
  • Figure 1 is a schematic diagram of two typical piezoelectric thin film resonator structures (the left is the sandwich structure of the piezoelectric thin film resonator; the right is the parallel electrode structure of the piezoelectric thin film resonator);
  • Figure 2 is a schematic diagram of the main steps of manufacturing a piezoelectric thin film resonator on a non-silicon substrate.
  • 101 is a piezoelectric film
  • 102 is an upper electrode
  • 103 is a lower electrode
  • 104 is an electrode
  • 201 is a silicon wafer
  • 202 is a copper film
  • 203 is a photoresist
  • 204 is a copper layer
  • 205 is a polyimide layer 206 is a sandwich structure of piezoelectric thin film resonators
  • 207 is a roller
  • 208 is a non-silicon substrate.
  • FIG. 1 shows two typical piezoelectric thin film resonator structures.
  • a sandwich structure film bulk acoustic resonator composed of a piezoelectric film 101 and an upper electrode 102 and a lower electrode 103 placed on both sides of the piezoelectric film 101; a parallel electrode piezoelectric film composed of the piezoelectric film 101 and the electrode 104 above it Thin film resonator.
  • the shape of the electrode can be square, round, ring, finger-shaped or other irregular shapes.
  • the piezoelectric film 101 may be all piezoelectric materials that have been applied to film bulk acoustic resonators, such as zinc oxide, aluminum nitride, lead zirconate titanate, and the like.
  • a piezoelectric thin film resonator is fabricated on a dimethylsiloxane (PDMS) substrate.
  • the piezoelectric thin film resonator to be manufactured is a sandwich structure, in which the upper electrode material is gold with a thickness of 150 nanometers, the lower electrode material is molybdenum with a thickness of 300 nanometers; the piezoelectric film material is aluminum nitride with a thickness of 1 micron .
  • Step 1 using a magnetron sputtering method, deposit a copper film 202 on the silicon wafer 201 as an electroplating seed layer, the thickness of the copper film is 300 nanometers.
  • 10 nanometers of titanium are sputtered on silicon wafers before sputtering copper.
  • Step 2 Coating photoresist 203 on the copper film 202 and performing photolithography to remove the photoresist in the air gap area below the piezoelectric thin film resonator to be installed.
  • the thickness of the photoresist is 2 microns.
  • Step 3 Perform electroplating to deposit the copper layer 204. After depositing the copper layer 204, use acetone to remove the photoresist to obtain a stepped peeling sacrificial layer. During the electroplating process, the thickness of the copper growth is controlled to be consistent with the height of the photoresist 203, and pass Chemical mechanical polishing is fine-tuned.
  • Step 4 Coating polyimide with a thickness of 6 microns.
  • the process of coating the polyimide layer 205 is: using a photosensitive polyimide glue, spin coating at 3000 revolutions per minute, spin coating for 30 seconds, 130°C Hot plate treatment for 5 minutes. The heat treatment was further carried out in a vacuum, the treatment temperature was 300°C, and the time was 30 minutes.
  • Step 5 fabricate a piezoelectric thin film resonator sandwich structure 206 on the polyimide layer 205.
  • Both the upper electrode and the lower electrode of the piezoelectric thin film resonator sandwich structure 206 are manufactured by a direct current sputtering method, and the lift-off process is used for patterning.
  • the piezoelectric film is manufactured by a radio frequency reactive sputtering method, using an aluminum target, and the sputtering atmosphere is a mixed gas of argon and nitrogen.
  • the aluminum nitride piezoelectric film is patterned by the reactive ion etching method of chlorine-based gas.
  • Step 6 using oxygen plasma to etch the polyimide layer in the area covered by the non-piezoelectric thin film resonator.
  • the etching process is: oxygen pressure is 1 Pascal, power is 3 watts per square centimeter, and etching time is 15 minutes.
  • Step 7 placing the device obtained in step 6 in a 10% ferric chloride solution to dissolve copper around and under the piezoelectric thin film resonator.
  • a plastic roller 207 with a length similar to the diameter of the silicon wafer 201 and apply a small amount of polyvinyl alcohol glue.
  • the piezoelectric thin film resonator including the polyimide support layer from the silicon wafer 201 After peeling, the device with the entire silicon wafer area is curled on the roller 207 after peeling.
  • Step 8 The piezoelectric thin film resonator crimped on the roller 207, including the polyimide support layer, is transferred to the dimethylsiloxane (PDMS) non-silicon substrate 208, and can be placed on the surface of the non-silicon substrate 208 in advance if necessary. Apply adhesive to increase bonding.
  • PDMS dimethylsiloxane
  • Step 9 using a syringe to rinse the contact surface of the roller 207 and the piezoelectric thin film resonator with hot water at 70° C. to separate the two to complete the manufacturing process.
  • a piezoelectric thin film resonator is fabricated on a non-woven fabric substrate.
  • the piezoelectric thin film resonator to be manufactured has a sandwich structure, wherein the upper electrode material is gold with a thickness of 200 nanometers, the lower electrode material is molybdenum with a thickness of 300 nanometers; the piezoelectric thin film material is zinc oxide with a thickness of 1 micron.
  • Step 1 using a magnetron sputtering method, deposit a copper film 202 on the silicon wafer 201 as an electroplating seed layer, the thickness of the copper film is 300 nanometers.
  • 10 nanometers of titanium are sputtered on silicon wafers before sputtering copper.
  • Step 2 Coating photoresist 203 on the copper film 202 and performing photolithography to remove the photoresist in the air gap area below the piezoelectric thin film resonator to be installed.
  • the thickness of the photoresist is 2 microns.
  • Step 3 Perform electroplating to deposit the copper layer 204. After depositing the copper layer 204, use acetone to remove the photoresist to obtain a stepped peeling sacrificial layer. During the electroplating process, the thickness of the copper growth is controlled to be consistent with the height of the photoresist 203, and pass Chemical mechanical polishing is fine-tuned.
  • Step 4 Coating polyimide with a thickness of 8 microns.
  • the process of coating the polyimide layer 205 is: using a photosensitive polyimide glue, spin coating at 2500 revolutions per minute, spin coating for 30 seconds, 130°C Hot plate treatment for 5 minutes. The heat treatment was further carried out in a vacuum, the treatment temperature was 250°C, and the time was 40 minutes.
  • Step 5 fabricate a piezoelectric thin film resonator sandwich structure 206 on the polyimide layer 205.
  • Both the upper electrode and the lower electrode of the piezoelectric thin film resonator sandwich structure 206 are manufactured by a direct current sputtering method, and the lift-off process is used for patterning.
  • the piezoelectric film is manufactured by a radio frequency reactive sputtering method, using an aluminum target, and the sputtering atmosphere is a mixed gas of argon and nitrogen.
  • the aluminum nitride piezoelectric film is patterned by the reactive ion etching method of chlorine-based gas.
  • Step 6 using oxygen plasma to etch the polyimide layer in the area covered by the non-piezoelectric thin film resonator.
  • the etching process is: oxygen pressure is 1 Pascal, power is 3 watts per square centimeter, and etching time is 15 minutes.
  • Step 7 placing the device obtained in step 6 in a 10% ferric chloride solution to dissolve copper around and under the piezoelectric thin film resonator.
  • a plastic roller 207 with a length similar to the diameter of the silicon wafer 201 and apply a small amount of polyvinyl alcohol glue.
  • the piezoelectric thin film resonator including the polyimide support layer from the silicon wafer 201 After peeling, the device with the entire silicon wafer area is curled on the roller 207 after peeling.
  • Step 8 Transfer the piezoelectric thin film resonator crimped on the roller 207, including the polyimide support layer, to the non-woven non-silicon substrate 208. If necessary, an adhesive can be applied to the surface of the non-silicon substrate 208 to increase bonding Sex.
  • Step 9 using a syringe to rinse the contact surface of the roller 207 and the piezoelectric thin film resonator with 50°C hot water to separate the two to complete the manufacturing process.
  • a piezoelectric thin film resonator is fabricated on a silk fabric substrate.
  • the piezoelectric thin film resonator to be manufactured is a sandwich structure, in which the upper electrode material is gold with a thickness of 100 nanometers, the lower electrode material is molybdenum with a thickness of 300 nanometers; the piezoelectric film material is aluminum nitride with a thickness of 1.5 microns .
  • Step 1 using a magnetron sputtering method, deposit a copper film 202 on the silicon wafer 201 as an electroplating seed layer, the thickness of the copper film is 300 nanometers.
  • 10 nanometers of titanium are sputtered on silicon wafers before sputtering copper.
  • Step 2 Coating photoresist 203 on the copper film 202 and performing photolithography to remove the photoresist in the air gap area below the piezoelectric thin film resonator to be set.
  • the thickness of the photoresist is 3 microns.
  • Step 3 Perform electroplating to deposit the copper layer 204. After depositing the copper layer 204, use acetone to remove the photoresist to obtain a stepped peeling sacrificial layer. During the electroplating process, the thickness of the copper growth is controlled to be consistent with the height of the photoresist 203, and pass Chemical mechanical polishing is fine-tuned.
  • Step 4 Coating polyimide with a thickness of 6 microns.
  • the process of coating the polyimide layer 205 is: using a photosensitive polyimide glue, spin coating at 3000 revolutions per minute, spin coating for 30 seconds, 130°C Hot plate treatment for 5 minutes. The heat treatment was further carried out in a vacuum, the treatment temperature was 250°C, and the time was 40 minutes.
  • Step 5 fabricate a piezoelectric thin film resonator sandwich structure 206 on the polyimide layer 205.
  • Both the upper electrode and the lower electrode of the piezoelectric thin film resonator sandwich structure 206 are manufactured by a direct current sputtering method, and the lift-off process is used for patterning.
  • the piezoelectric film is manufactured by a radio frequency reactive sputtering method, using an aluminum target, and the sputtering atmosphere is a mixed gas of argon and nitrogen.
  • the aluminum nitride piezoelectric film is patterned using chlorine-based gas reactive ion etching.
  • Step 6 using oxygen plasma to etch the polyimide layer in the area covered by the non-piezoelectric thin film resonator.
  • the etching process is: oxygen pressure is 1 Pascal, power is 3 watts per square centimeter, and etching time is 15 minutes.
  • Step 7 placing the device obtained in step 6 in a 10% ferric chloride solution to dissolve copper around and under the piezoelectric thin film resonator.
  • a plastic roller 207 with a length similar to the diameter of the silicon wafer 201 and apply a small amount of polyvinyl alcohol glue.
  • the piezoelectric thin film resonator including the polyimide support layer from the silicon wafer 201 After peeling, the device with the entire silicon wafer area is curled on the roller 207 after peeling.
  • Step 8 Transfer the piezoelectric thin film resonator crimped on the roller 207, including the polyimide support layer, to the silk fabric non-silicon substrate 208. If necessary, an adhesive can be applied to the surface of the non-silicon substrate 208 to increase bonding .
  • Step 9 using a syringe to rinse the contact surface of the roller 207 and the piezoelectric thin film resonator with hot water at 90° C. to separate the two to complete the manufacturing process.
  • a piezoelectric thin film resonator is fabricated on an acrylic substrate.
  • the piezoelectric thin film resonator to be manufactured has a sandwich structure, wherein the upper electrode material is gold with a thickness of 150 nanometers, the lower electrode material is molybdenum with a thickness of 300 nanometers; the piezoelectric thin film material is zinc oxide with a thickness of 2 microns.
  • Step 1 using a magnetron sputtering method, deposit a copper film 202 on the silicon wafer 201 as an electroplating seed layer, the thickness of the copper film is 300 nanometers.
  • 10 nanometers of titanium are sputtered on silicon wafers before sputtering copper.
  • Step 2 Coating photoresist 203 on the copper film 202 and performing photolithography to remove the photoresist in the air gap area below the piezoelectric thin film resonator to be set.
  • the thickness of the photoresist is 4 microns.
  • Step 3 Perform electroplating to deposit the copper layer 204. After depositing the copper layer 204, use acetone to remove the photoresist to obtain a stepped stripping sacrificial layer. Chemical mechanical polishing is fine-tuned.
  • Step 4 Coating polyimide with a thickness of 12 microns.
  • the process of coating polyimide layer 205 is: using photosensitive polyimide glue, spin coating at 1500 revolutions per minute, spin coating for 30 seconds, 130°C Hot plate treatment for 5 minutes. The heat treatment was further carried out in a vacuum, the treatment temperature was 250°C, and the time was 40 minutes.
  • Step 5 fabricate a piezoelectric thin film resonator sandwich structure 206 on the polyimide layer 205.
  • Both the upper electrode and the lower electrode of the piezoelectric thin film resonator sandwich structure 206 are manufactured by a direct current sputtering method, and the lift-off process is used for patterning.
  • the piezoelectric film is manufactured by a radio frequency reactive sputtering method, using an aluminum target, and the sputtering atmosphere is a mixed gas of argon and nitrogen.
  • the aluminum nitride piezoelectric film is patterned by the reactive ion etching method of chlorine-based gas.
  • Step 6 using oxygen plasma to etch the polyimide layer in the area covered by the non-piezoelectric thin film resonator.
  • the etching process is: oxygen pressure is 1 Pascal, power is 3 watts per square centimeter, and etching time is 15 minutes.
  • Step 7 placing the device obtained in step 6 in a 10% ferric chloride solution to dissolve copper around and under the piezoelectric thin film resonator.
  • a plastic roller 207 with a length similar to the diameter of the silicon wafer 201 and apply a small amount of polyvinyl alcohol glue.
  • the piezoelectric thin film resonator including the polyimide support layer from the silicon wafer 201 After peeling, the device with the entire silicon wafer area is curled on the roller 207 after peeling.
  • Step 8 Transfer the piezoelectric film resonator including the polyimide support layer on the roller 207 to the acrylic non-silicon substrate 208. If necessary, an adhesive can be applied to the surface of the non-silicon substrate 208 to increase bonding .
  • Step 9 using a syringe to rinse the contact surface of the roller 207 and the piezoelectric thin film resonator with 80°C hot water to separate the two to complete the manufacturing process.
  • the parts not mentioned in the present invention can be realized by adopting or learning from existing technologies.

Abstract

一种在非硅基底上制造压电薄膜谐振器的方法，包括以下步骤：在硅片（201）上沉积铜薄膜（202）；在铜薄膜（202）上涂覆光刻胶（203）并进行光刻，去除待设置压电薄膜谐振器的下方空气间隙区域的光刻胶；进行电镀沉积铜层（204）、去除光刻胶，获得具有台阶的剥离牺牲层；涂覆聚酰亚胺并对其热处理进行亚胺化、在其上方制作压电薄膜谐振器三明治结构（206）；使用氧等离子体对非压电薄膜谐振器覆盖区域的聚酰亚胺层进行刻蚀；将所得器件置于铜腐蚀溶液中，溶解压电薄膜谐振器周围及其下方的铜，使用涂有聚乙烯醇胶水的滚筒（207）贴于压电薄膜谐振器上方，将其从硅片（201）上进行释放并剥离，再将其转移至所需非硅基底（208）上；用热水冲洗滚筒（207），使滚筒（207）与压电薄膜谐振器脱离，即可完成制作过程。该方法中在硅衬底上进行主要器件制备的过程，能够提高加工精度和压电薄膜（101）质量，同时在压电薄膜谐振器下方制作的空气间隙区域提高了器件性能；以聚酰亚胺为支撑层并使用滚筒（207）进行器件转移，无需精确控制粘合力，一次性转移器件数量多，对器件表面无破坏，可靠性好。

Description

一种在非硅基底上制造压电薄膜谐振器的方法 技术领域
本发明涉及微机电系统技术领域，具体涉及一种在非硅基底上制造压电薄膜谐振器的方法。
背景技术
压电薄膜谐振器是近年来发展的一种新型微机电系统器件。目前该类器件已经应用于构建吉赫兹频段射频滤波器以及高灵敏的生化传感器方面。薄膜体声波器件的小尺寸、高Q值和非常适合作为滤波器元件应用于柔性通信电路中，或者作为高灵敏度传感元件应用于微流控芯片或可穿戴电子系统。根据其驻波谐振原理，压电震荡堆下方需构造自支撑悬空结构或布拉格声反射层。这一结构通常采用硅基半导体制造技术中的体硅/表面硅工艺或在硅衬底上进行周期性多层薄膜沉积。显然，目前的器件工艺无法与柔性电子和微流控器件中以聚二甲基硅氧烷(PDMS)、塑料、玻璃等非硅材料为基底的制造工艺兼容。
目前，在非硅基底上制造压电薄膜谐振器的主要方法有两类。
第一类方法直接在柔性基底上或硅衬底上的柔性薄膜上制造压电薄膜谐振器，并进行剥离。如公开号为CN 103929149 A的中国专利，一种柔性压电薄膜体声波谐振器及其制备方法。该方法直接在柔性基底上沉积底电极、压电薄膜和顶电极层，构成薄膜体声波谐振器。
又如2015年3月发表在期刊SCIENTIFIC REPORTS第5卷第9510页的论文“Film bulk acoustic resonators integrated on arbitrary substrates using a polymer support layer”。该方法的主要步骤为：(1)在硅衬底上刻蚀出沟槽；(2)直接在硅衬底上涂覆聚酰亚胺；(3)在聚酰亚胺表面制造薄膜体声波谐振器；(4)将器件在硅衬底上进行剥离。
公开号为106788318A的发明专利公开了一种在柔性基底上制造薄膜体声波谐振器的方法，包括以下步骤：(1)在硅衬底上依次涂覆水溶性高分子聚合物膜层和聚酰亚胺膜层；(2)在聚酰亚胺膜层上方制造薄膜体声波谐振器结构；(3 )在薄膜体声波谐振器上电极表面制作金属柱；(4)在薄膜体声波谐振器上电极表面涂覆聚甲基丙烯酸甲酯膜层；(5)在硅衬底上涂覆所使用柔性基底的胶剂并固化；(6)将整个结构置于水中，使器件与硅衬底分离；(7)使用腐蚀液去除金属柱；(8)将器件置于丙酮溶液中，溶解聚甲基丙烯酸甲酯膜层，形成空气隙；(9)去除薄膜体声波谐振器下方的聚酰亚胺膜层。
另一类方法采用在硅衬底上制造压电薄膜谐振器，然后将其转移至柔性材料等非硅基底。如2017年发表在期刊APPLIED PHYSICS LETTERS第111卷第023505页的论文“A flexible，gigahertz，and free-standing thin film piezoelectric MEMS resonator with high figure of merit”。该方法的主要使用高聚物印章将硅衬底上的空气隙结构压电薄膜谐振器使用向柔性基底上转移，其中柔性基底上制造空气隙结构实现谐振器的自支撑。
上述技术方案的主要缺点在于，对第一类方法来说，柔性基底的硬度较差，直接在柔性基底上进行器件制造，其加工精度和薄膜质量均受到影响。在硅衬底上涂覆聚酰亚胺后进行器件制备能够解决加工精度和薄膜质量的问题，但能够使用的柔性基底种类受到限制。另外所制造的薄膜体声波谐振器一侧直接接触较厚的柔性基底，声波耗散导致器件性能衰减。对第二类方法来说，高聚物印章的使用前需要对所转移器件和目标表面进行处理，以控制粘合力，有可能破坏器件或基底表面已有的化学功能团，对一些基底也很难使用；大面积高聚物印章的压力控制不均匀，一次转移的器件数量有限，对精细结构也容易造成破坏。
发明概述
技术问题
问题的解决方案
技术解决方案
针对上述现有技术的不足和缺陷，本发明提供了一种在非硅基底上制造压电薄膜谐振器的方法。
本发明采用以下的技术方案：
一种在非硅基底上制造压电薄膜谐振器的方法，其特征在于，包括以下步骤：
(1)在硅片上沉积铜薄膜；
(2)在铜薄膜上涂覆光刻胶并进行光刻，光刻去除待设置压电薄膜谐振器的下方空气间隙区域的光刻胶；
(3)进行电镀沉积铜层，沉积铜层后去除光刻胶，获得具有台阶的剥离牺牲层；
(4)涂覆聚酰亚胺并对其热处理进行亚胺化，作为压电薄膜谐振器的支撑层；
(5)在聚酰亚胺层上方制作压电薄膜谐振器三明治结构；
(6)使用氧等离子体对非压电薄膜谐振器覆盖区域的聚酰亚胺层进行刻蚀；
(7)将步骤(6)所得器件置于铜腐蚀溶液中，溶解压电薄膜谐振器周围及其下方的铜，使用涂有聚乙烯醇胶水的滚筒贴于压电薄膜谐振器上方，对压电薄膜谐振器包括聚酰亚胺支撑层从硅片上进行释放并剥离；
(8)将压电薄膜谐振器包括聚酰亚胺支撑层转移至所需非硅基底上；
(9)用热水冲洗滚筒，使滚筒与压电薄膜谐振器脱离，完成制作过程。
上述方案中，步骤(7)中铜腐蚀溶液不对压电薄膜谐振器产生腐蚀作用。
优选地，步骤(1)中铜薄膜的厚度为200-500nm。
优选地，步骤(1)中铜薄膜的沉积方法为磁控溅射。
优选地，在溅射铜以前，先在硅片上溅射沉积钛。
优选地，电镀沉积铜层的厚度为压电薄膜谐振器中压电薄膜、上电极和下电极的厚度之和的1.5-3倍。
优选地，聚酰亚胺层的厚度为电镀沉积铜层的3-5倍。
优选地，聚酰亚胺热处理为在真空或氮气氛围中进行，热处理温度为250-400℃。
优选地，所述非硅基底为可延展的高分子有机物、布料、丝绸织物、橡胶或医用胶布。
优选地，可延展的高分子有机物为聚二甲基硅氧烷、聚氨酯、丙烯酸酯、聚对苯二甲酸乙二醇酯、丙烯酸、聚乙烯醇、果胶或聚萘二甲酸乙二醇。
优选地，步骤(9)中热水的温度为50-90℃。
发明的有益效果
有益效果
本发明具有的有益效果是：
(1)在硅衬底上进行主要器件制备过程，能够提高加工精度和压电薄膜质量，同时在压电薄膜谐振器下方制作的空气间隙区域提高了器件性能；(2)以聚酰亚胺为支撑层并使用滚筒进行器件转移，无需精确控制粘合力，一次性转移器件数量多，对器件表面无破坏，可靠性好。
对附图的简要说明
附图说明
图1为两种典型压电薄膜谐振器结构的示意图(左为压电薄膜谐振器三明治结构；右为压电薄膜谐振器平行电极结构)；
图2为在非硅基底上制造压电薄膜谐振器的主要步骤示意图。
其中，101为压电薄膜，102为上电极，103为下电极，104为电极；201为硅片，202为铜薄膜，203为光刻胶，204为铜层，205为聚酰亚胺层，206为压电薄膜谐振器三明治结构，207为滚筒，208为非硅基底。
发明实施例
本发明的实施方式
下面结合附图对本发明进行具体的说明：
本发明可应用于制造各种结构的压电薄膜谐振器，对压电薄膜谐振器的材料、结构、电极形状均没有要求。附图1给出了两种典型压电薄膜谐振器结构。如由压电薄膜101以及置于压电薄膜101两侧的上电极102、下电极103构成的三明治结构薄膜体声波谐振器；由压电薄膜101和其上方的电极104构成的平行电极压电薄膜谐振器。电极的形状可以是方形、圆形、环形、插指形或其他不规则形状等。压电薄膜101可以是目前已应用于薄膜体声波谐振器的所有压电材料，如氧化锌、氮化铝、锆钛酸铅等。
以如附图2所示的在非硅基底上制造压电薄膜谐振器的主要步骤为例阐述本发明的使用方法。
实施例1
参阅附图2所示，在二甲基硅氧烷(PDMS)基底上制造压电薄膜谐振器。所要制造的压电薄膜谐振器为三明治结构，其中上电极材料为金，厚度为150纳米，下电极的材料为钼，厚度为300纳米；压电薄膜的材料为氮化铝，厚度为1微米。
步骤1，使用磁控溅射方法，在硅片201上沉积铜薄膜202作为电镀种子层，铜薄膜厚度为300纳米。为了提高铜与硅片的结合力，在溅射铜以前，先在硅片上溅射10纳米钛。
步骤2，在铜薄膜202上涂覆光刻胶203并进行光刻，去除待设置压电薄膜谐振器的下方空气间隙区域的光刻胶，光刻胶的厚度为2微米。
步骤3，进行电镀沉积铜层204，沉积铜层204后使用丙酮去除光刻胶，获得具有台阶的剥离牺牲层，电镀沉积过程中控制铜生长的厚度与光刻胶203的高度一致，并通过化学机械抛光进行微调。
步骤4，涂覆聚酰亚胺，厚度为6微米，涂覆聚酰亚胺层205的工艺为：使用光敏性聚酰亚胺胶剂，旋涂3000转/分钟旋涂30秒，130℃热板处理5分钟。进一步在真空中进行热处理，处理温度为300℃，时间为30分钟。
步骤5，在聚酰亚胺层205上方制作压电薄膜谐振器三明治结构206。压电薄膜谐振器三明治结构206的上电极和下电极均采用直流溅射方法进行制造，Lift-off工艺进行图形化。压电薄膜采用射频反应溅射方法进行制造，使用铝靶，溅射气氛为氩气与氮气的混合气体。氮化铝压电薄膜采用氯基气体的反应离子刻蚀方法进行图形化。
步骤6，使用氧等离子体对非压电薄膜谐振器覆盖区域的聚酰亚胺层进行刻蚀。刻蚀工艺为：氧气压强为1帕斯卡，功率为3瓦每平方厘米，刻蚀时间为15分钟。
步骤7，将步骤6所得器件置于10％三氯化铁溶液中，溶解压电薄膜谐振器周围及其下方的铜。使用与硅片201直径相近的长度的塑料滚筒207，涂抹少量聚乙烯醇胶水，从硅片201一侧开始，逐渐将压电薄膜谐振器包括聚酰亚胺支撑层从硅片201上进行旋转剥离，剥离后整硅片面积的器件卷曲在滚筒207上。
步骤8，将卷曲在滚筒207上的压电薄膜谐振器包括聚酰亚胺支撑层转移至二甲基硅氧烷(PDMS)非硅基底208上，根据需要，可以事先在非硅基底208表面涂抹粘合剂增加结合性。
步骤9，使用注射器将70℃热水冲洗滚筒207与压电薄膜谐振器的接触面，使两者脱离，完成制作过程。
实施例2
参阅附图2所示，在无纺布基底上制造压电薄膜谐振器。所要制造的压电薄膜谐振器为三明治结构，其中上电极材料为金，厚度为200纳米，下电极的材料为钼，厚度为300纳米；压电薄膜的材料为氧化锌，厚度为1微米。
步骤1，使用磁控溅射方法，在硅片201上沉积铜薄膜202作为电镀种子层，铜薄膜厚度为300纳米。为了提高铜与硅片的结合力，在溅射铜以前，先在硅片上溅射10纳米钛。
步骤2，在铜薄膜202上涂覆光刻胶203并进行光刻，去除待设置压电薄膜谐振器的下方空气间隙区域的光刻胶，光刻胶的厚度为2微米。
步骤3，进行电镀沉积铜层204，沉积铜层204后使用丙酮去除光刻胶，获得具有台阶的剥离牺牲层，电镀沉积过程中控制铜生长的厚度与光刻胶203的高度一致，并通过化学机械抛光进行微调。
步骤4，涂覆聚酰亚胺，厚度为8微米，涂覆聚酰亚胺层205的工艺为：使用光敏性聚酰亚胺胶剂，旋涂2500转/分钟旋涂30秒，130℃热板处理5分钟。进一步在真空中进行热处理，处理温度为250℃，时间为40分钟。
步骤5，在聚酰亚胺层205上方制作压电薄膜谐振器三明治结构206。压电薄膜谐振器三明治结构206的上电极和下电极均采用直流溅射方法进行制造，Lift-off工艺进行图形化。压电薄膜采用射频反应溅射方法进行制造，使用铝靶，溅射气氛为氩气与氮气的混合气体。氮化铝压电薄膜采用氯基气体的反应离子刻蚀方法进行图形化。
步骤6，使用氧等离子体对非压电薄膜谐振器覆盖区域的聚酰亚胺层进行刻蚀。刻蚀工艺为：氧气压强为1帕斯卡，功率为3瓦每平方厘米，刻蚀时间为15分钟。
步骤7，将步骤6所得器件置于10％三氯化铁溶液中，溶解压电薄膜谐振器周围及其下方的铜。使用与硅片201直径相近的长度的塑料滚筒207，涂抹少量聚乙烯醇胶水，从硅片201一侧开始，逐渐将压电薄膜谐振器包括聚酰亚胺支撑层从硅片201上进行旋转剥离，剥离后整硅片面积的器件卷曲在滚筒207上。
步骤8，将卷曲在滚筒207上的压电薄膜谐振器包括聚酰亚胺支撑层转移至无纺布非硅基底208上，根据需要，可以事先在非硅基底208表面涂抹粘合剂增加结合性。
步骤9，使用注射器将50℃热水冲洗滚筒207与压电薄膜谐振器的接触面，使两者脱离，完成制作过程。
实施例3
参阅附图2所示，在丝绸织物基底上制造压电薄膜谐振器。所要制造的压电薄膜谐振器为三明治结构，其中上电极材料为金，厚度为100纳米，下电极的材料为钼，厚度为300纳米；压电薄膜的材料为氮化铝，厚度为1.5微米。
步骤1，使用磁控溅射方法，在硅片201上沉积铜薄膜202作为电镀种子层，铜薄膜厚度为300纳米。为了提高铜与硅片的结合力，在溅射铜以前，先在硅片上溅射10纳米钛。
步骤2，在铜薄膜202上涂覆光刻胶203并进行光刻，去除待设置压电薄膜谐振器的下方空气间隙区域的光刻胶，光刻胶的厚度为3微米。
步骤3，进行电镀沉积铜层204，沉积铜层204后使用丙酮去除光刻胶，获得具有台阶的剥离牺牲层，电镀沉积过程中控制铜生长的厚度与光刻胶203的高度一致，并通过化学机械抛光进行微调。
步骤4，涂覆聚酰亚胺，厚度为6微米，涂覆聚酰亚胺层205的工艺为：使用光敏性聚酰亚胺胶剂，旋涂3000转/分钟旋涂30秒，130℃热板处理5分钟。进一步在真空中进行热处理，处理温度为250℃，时间为40分钟。
步骤5，在聚酰亚胺层205上方制作压电薄膜谐振器三明治结构206。压电薄膜谐振器三明治结构206的上电极和下电极均采用直流溅射方法进行制造，Lift-off工艺进行图形化。压电薄膜采用射频反应溅射方法进行制造，使用铝靶，溅射气氛为氩气与氮气的混合气体。氮化铝压电薄膜采用氯基气体的反应离子刻蚀 方法进行图形化。
步骤6，使用氧等离子体对非压电薄膜谐振器覆盖区域的聚酰亚胺层进行刻蚀。刻蚀工艺为：氧气压强为1帕斯卡，功率为3瓦每平方厘米，刻蚀时间为15分钟。
步骤7，将步骤6所得器件置于10％三氯化铁溶液中，溶解压电薄膜谐振器周围及其下方的铜。使用与硅片201直径相近的长度的塑料滚筒207，涂抹少量聚乙烯醇胶水，从硅片201一侧开始，逐渐将压电薄膜谐振器包括聚酰亚胺支撑层从硅片201上进行旋转剥离，剥离后整硅片面积的器件卷曲在滚筒207上。
步骤8，将卷曲在滚筒207上的压电薄膜谐振器包括聚酰亚胺支撑层转移至丝绸织物非硅基底208上，根据需要，可以事先在非硅基底208表面涂抹粘合剂增加结合性。
步骤9，使用注射器将90℃热水冲洗滚筒207与压电薄膜谐振器的接触面，使两者脱离，完成制作过程。
实施例4
参阅附图2所示，在丙烯酸酯基底上制造压电薄膜谐振器。所要制造的压电薄膜谐振器为三明治结构，其中上电极材料为金，厚度为150纳米，下电极的材料为钼，厚度为300纳米；压电薄膜的材料为氧化锌，厚度为2微米。
步骤1，使用磁控溅射方法，在硅片201上沉积铜薄膜202作为电镀种子层，铜薄膜厚度为300纳米。为了提高铜与硅片的结合力，在溅射铜以前，先在硅片上溅射10纳米钛。
步骤2，在铜薄膜202上涂覆光刻胶203并进行光刻，去除待设置压电薄膜谐振器的下方空气间隙区域的光刻胶，光刻胶的厚度为4微米。
步骤3，进行电镀沉积铜层204，沉积铜层204后使用丙酮去除光刻胶，获得具有台阶的剥离牺牲层，电镀沉积过程中控制铜生长的厚度与光刻胶203的高度一致，并通过化学机械抛光进行微调。
步骤4，涂覆聚酰亚胺，厚度为12微米，涂覆聚酰亚胺层205的工艺为：使用光敏性聚酰亚胺胶剂，旋涂1500转/分钟旋涂30秒，130℃热板处理5分钟。进一步在真空中进行热处理，处理温度为250℃，时间为40分钟。
步骤5，在聚酰亚胺层205上方制作压电薄膜谐振器三明治结构206。压电薄膜谐振器三明治结构206的上电极和下电极均采用直流溅射方法进行制造，Lift-off工艺进行图形化。压电薄膜采用射频反应溅射方法进行制造，使用铝靶，溅射气氛为氩气与氮气的混合气体。氮化铝压电薄膜采用氯基气体的反应离子刻蚀方法进行图形化。
步骤6，使用氧等离子体对非压电薄膜谐振器覆盖区域的聚酰亚胺层进行刻蚀。刻蚀工艺为：氧气压强为1帕斯卡，功率为3瓦每平方厘米，刻蚀时间为15分钟。
步骤7，将步骤6所得器件置于10％三氯化铁溶液中，溶解压电薄膜谐振器周围及其下方的铜。使用与硅片201直径相近的长度的塑料滚筒207，涂抹少量聚乙烯醇胶水，从硅片201一侧开始，逐渐将压电薄膜谐振器包括聚酰亚胺支撑层从硅片201上进行旋转剥离，剥离后整硅片面积的器件卷曲在滚筒207上。
步骤8，将卷曲在滚筒207上的压电薄膜谐振器包括聚酰亚胺支撑层转移至丙烯酸酯非硅基底208上，根据需要，可以事先在非硅基底208表面涂抹粘合剂增加结合性。
步骤9，使用注射器将80℃热水冲洗滚筒207与压电薄膜谐振器的接触面，使两者脱离，完成制作过程。
本发明中未述及的部分采用或借鉴已有技术即可实现。
当然，上述说明并非是对本发明的限制，本发明也并不仅限于上述举例，本技术领域的技术人员在本发明的实质范围内所做出的变化、改型、添加或替换，也应属于本发明的保护范围。

Claims (10)

  1. 一种在非硅基底上制造压电薄膜谐振器的方法，其特征在于，包括以下步骤：
    (1)在硅片上沉积铜薄膜；
    (2)在铜薄膜上涂覆光刻胶并进行光刻，光刻去除待设置压电薄膜谐振器的下方空气间隙区域的光刻胶；
    (3)进行电镀沉积铜层，沉积铜层后去除光刻胶，获得具有台阶的剥离牺牲层；
    (4)涂覆聚酰亚胺并对其热处理进行亚胺化，作为压电薄膜谐振器的支撑层；
    (5)在聚酰亚胺层上方制作压电薄膜谐振器三明治结构；
    (6)使用氧等离子体对非压电薄膜谐振器覆盖区域的聚酰亚胺层进行刻蚀；
    (7)将步骤(6)所得器件置于铜腐蚀溶液中，溶解压电薄膜谐振器周围及其下方的铜，使用涂有聚乙烯醇胶水的滚筒贴于压电薄膜谐振器上方，对压电薄膜谐振器包括聚酰亚胺支撑层从硅片上进行释放并剥离；
    (8)将压电薄膜谐振器包括聚酰亚胺支撑层转移至所需非硅基底上；
    (9)用热水冲洗滚筒，使滚筒与压电薄膜谐振器脱离，完成制作过程。
  2. 根据权利要求1所述的一种在非硅基底上制造压电薄膜谐振器的方法，其特征在于，步骤(1)中铜薄膜的厚度为200-500nm。
  3. 根据权利要求1所述的一种在非硅基底上制造压电薄膜谐振器的方法，其特征在于，步骤(1)中铜薄膜的沉积方法为磁控溅射。
  4. 根据权利要求3所述的一种在非硅基底上制造压电薄膜谐振器的方法，其特征在于，在溅射铜以前，先在硅片上溅射沉积钛。
  5. 根据权利要求1所述的一种在非硅基底上制造压电薄膜谐振器的方 法，其特征在于，电镀沉积铜层的厚度为压电薄膜谐振器中压电薄膜、上电极和下电极的厚度之和的1.5-3倍。
  6. 根据权利要求5所述的一种在非硅基底上制造压电薄膜谐振器的方法，其特征在于，聚酰亚胺层的厚度为电镀沉积铜层的3-5倍。
  7. 根据权利要求1所述的一种在非硅基底上制造压电薄膜谐振器的方法，其特征在于，聚酰亚胺热处理为在真空或氮气氛围中进行，热处理温度为250-400℃。
  8. 根据权利要求1所述的一种在非硅基底上制造压电薄膜谐振器的方法，其特征在于，所述非硅基底为可延展的高分子有机物、布料、丝绸织物、橡胶或医用胶布。
  9. 根据权利要求8所述的一种在非硅基底上制造压电薄膜谐振器的方法，其特征在于，可延展的高分子有机物为聚二甲基硅氧烷、聚氨酯、丙烯酸酯、聚对苯二甲酸乙二醇酯、丙烯酸、聚乙烯醇、果胶或聚萘二甲酸乙二醇。
  10. 根据权利要求1所述的一种在非硅基底上制造压电薄膜谐振器的方法，其特征在于，步骤(9)中热水的温度为50-90℃。
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