WO2020188681A1 - 露光システム、露光装置、及び露光方法 - Google Patents

露光システム、露光装置、及び露光方法 Download PDF

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Publication number
WO2020188681A1
WO2020188681A1 PCT/JP2019/011101 JP2019011101W WO2020188681A1 WO 2020188681 A1 WO2020188681 A1 WO 2020188681A1 JP 2019011101 W JP2019011101 W JP 2019011101W WO 2020188681 A1 WO2020188681 A1 WO 2020188681A1
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WIPO (PCT)
Prior art keywords
exposure
substrate
region
information
inspection
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Application number
PCT/JP2019/011101
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English (en)
French (fr)
Japanese (ja)
Inventor
雄介 川上
泰輝 布川
Original Assignee
株式会社ニコン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ニコン filed Critical 株式会社ニコン
Priority to PCT/JP2019/011101 priority Critical patent/WO2020188681A1/ja
Priority to CN202080021585.9A priority patent/CN113574459B/zh
Priority to JP2021507402A priority patent/JP7310879B2/ja
Priority to KR1020217030345A priority patent/KR20210129171A/ko
Priority to TW109109005A priority patent/TWI810444B/zh
Priority to PCT/JP2020/012066 priority patent/WO2020189729A1/ja
Publication of WO2020188681A1 publication Critical patent/WO2020188681A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1605—Process or apparatus coating on selected surface areas by masking
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N13/00—Investigating surface or boundary effects, e.g. wetting power; Investigating diffusion effects; Analysing materials by determining surface, boundary, or diffusion effects
    • G01N13/02—Investigating surface tension of liquids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/33—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2035—Exposure; Apparatus therefor simultaneous coating and exposure; using a belt mask, e.g. endless
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Definitions

  • the present invention relates to an exposure system, an exposure apparatus, and an exposure method.
  • a method of forming patterns having different surface characteristics on a substrate and creating fine devices by utilizing the differences in the surface characteristics has been proposed.
  • a pattern forming method utilizing the difference in surface characteristics on the substrate for example, there is a method of forming a hydrophilic region and a water-repellent region on the substrate and applying an aqueous solution of a functional material to the hydrophilic region. In this method, since the aqueous solution of the functional material wets and spreads only in the hydrophilic region, a pattern of the functional material can be formed.
  • Patent Document 1 describes a fluorine-containing compound capable of changing the contact angle before and after light irradiation. After irradiating such a compound with light, it is preferable to be able to determine whether or not sufficient light irradiation has been performed on the compound in order to satisfactorily apply the functional material to the hydrophilic region.
  • an exposure system that exposes a layer containing a compound having a photosensitive protective group formed on a substrate to form a pro-liquid repellent pattern including a pro-liquid region and a liquid-repellent region.
  • An exposure device that exposes a layer containing a compound having a photosensitive protective group, an inspection device that acquires information on the amount of desorption of the photosensitive protective group in a region exposed by the exposure device for each measurement point, and an inspection device.
  • an exposure system including a control device having a determination unit for determining the quality of exposure based on information on measurement points included in an area exposed by the exposure device.
  • an exposure apparatus that exposes a layer containing a compound having a photosensitive protective group formed on a substrate to form a pro-liquid repellent pattern including a pro-liquid region and a liquid-repellent region.
  • An exposure unit that exposes a layer containing a compound having a photosensitive protective group, an inspection unit that acquires information on the amount of desorption of the photosensitive protective group in the area exposed by the exposure unit for each measurement point, and an inspection unit.
  • an exposure apparatus including a control unit having a determination unit for determining the quality of exposure based on information on measurement points included in an area exposed by the exposure unit.
  • an exposure formed on a substrate and containing a compound having a photosensitive protective group is exposed to form a pro-liquid repellent pattern including a pro-liquid water region and a liquid-repellent region.
  • the method is to expose a layer containing a compound having a photosensitive protective group, to obtain information on the amount of desorption of the photosensitive protective group in the exposed region for each measurement point, and to obtain the exposed region.
  • An exposure method is provided, including determining the quality of exposure based on the information of the measurement points included in the above.
  • FIG. 1 It is a figure which shows an example of the exposure system which concerns on 1st Embodiment.
  • (A) and (B) are images showing an example of measurement results by an atomic force microscope.
  • (A) and (B) are diagrams schematically showing an example of a procedure for determining the quality of exposure based on information related to the amount of desorption. It is a flowchart which shows an example of the exposure method by the exposure system which concerns on 1st Embodiment. It is a flowchart which shows another example of the exposure method by the exposure system which concerns on 1st Embodiment. It is a flowchart which shows another example of the exposure method by the exposure system which concerns on 1st Embodiment.
  • FIGS. 1 and (B) are diagrams showing an example in the case of controlling the length of the transport path of the substrate in the plating apparatus in the exposure system according to the fourth embodiment. It is a figure which shows an example of the exposure system which concerns on 5th Embodiment. It is a figure which shows an example of the exposure apparatus which concerns on 6th Embodiment.
  • the protective group of the compound layer having a photosensitive protective group is removed by exposure, and this portion is relatively liquefied to form a pro-liquid repellent pattern.
  • a wiring pattern is formed by applying a plating catalyst to the water-repellent portion and performing electroless plating, or by applying a wiring forming material to the hydrophilic portion.
  • the degree of liquefaction is small. Even if electroless plating or coating of a wiring forming material is performed in such a state, it is difficult to obtain a good wiring pattern.
  • the layer of the compound having a photosensitive protecting group is exposed to form a pro-liquid repellent pattern, it is determined whether or not the protective group is sufficiently removed before forming the wiring pattern.
  • an exposure system an exposure apparatus, and an exposure method capable of capable.
  • the substrate is fed from a supply roll in which a flexible sheet-shaped substrate (sheet substrate) is wound in a roll shape, and various treatments are performed on the fed substrate.
  • a so-called roll-to-roll (Roll To Roll) method is adopted in which the substrate after various treatments is wound up with a recovery roll after continuous application.
  • the substrate has a strip-like shape in which the transport direction of the substrate is the longitudinal direction (long) and the width direction is the lateral direction (short).
  • the substrate sent from the supply roll is sequentially subjected to various treatments such as pretreatment, exposure treatment, and posttreatment, and is wound up by the recovery roll.
  • the substrate is not limited to being conveyed in a roll-to-roll manner. For example, a plurality of rectangular substrates are continuously or intermittently conveyed in a predetermined direction, and various processes are performed during the transfer. There may be.
  • FIG. 1 is a diagram showing an example of an exposure system according to the first embodiment.
  • the exposure system 100 includes a coating device CT, an exposure device EX, a transport device TR, an inspection device DT, and a control device CONT.
  • the coating device CT, the exposure device EX, and the inspection device DT are arranged in this order from the upstream side to the downstream side in the transport direction of the substrate FS by the transport device TR, for example.
  • the coating device CT coats a droplet of a compound having a photosensitive protecting group on the substrate FS to form a layer of this compound (hereinafter referred to as a compound layer).
  • a droplet coating device such as an inkjet type coating device, a spin coating type coating device, a roll coating type coating device, or a slot coating type coating device is used.
  • One or more coating devices CT are arranged. When a plurality of coating devices CT are arranged, for example, they may be arranged along the transport direction of the substrate FS, or may be arranged in the width direction of the substrate FS.
  • a fluorine-containing compound represented by the following general formula (1) can be used as the compound having a photosensitive protecting group.
  • X represents a halogen atom or an alkoxy group
  • R 1 represents a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms
  • R f1 and R f2. are independently alkoxy groups, siloxy groups, or fluorinated alkoxy groups
  • n represents an integer of 0 or more.
  • X is a halogen atom or an alkoxy group.
  • the halogen atom of X include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.
  • the alkoxy group of X preferably has 1 to 20 carbon atoms, more preferably 1 to 10 carbon atoms, further preferably 1 to 5 carbon atoms, particularly preferably 1 to 3 carbon atoms, and most preferably 1 or 2 carbon atoms. It is preferable that X is an alkoxy group rather than a halogen atom.
  • N represents an integer of 0 or more, and is preferably an integer of 1 to 20 and more preferably an integer of 2 to 15 from the viewpoint of easy availability of starting materials. Further, n is preferably 3 or more, and more preferably 4 or more.
  • R 1 is a hydrogen atom or a linear, branched chain or cyclic alkyl group having 1 to 10 carbon atoms.
  • the alkyl group of R 1 is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and specifically, a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, or an isobutyl group. Examples include a group, a tert-butyl group, a pentyl group, an isopentyl group, a neopentyl group and the like.
  • cyclic alkyl group examples include a group obtained by removing one or more hydrogen atoms from a polycycloalkane such as a monocycloalkane, a bicycloalkane, a tricycloalkane, and a tetracycloalkane.
  • R 1 is preferably a hydrogen atom, a methyl group, an ethyl group, an n-propyl group or an isopropyl group.
  • R f1 and R f2 are independently alkoxy groups, siloxy groups, or fluorinated alkoxy groups, respectively.
  • the fluorinated alkoxy groups of R f1 and R f2 are preferably alkoxy groups having 3 or more carbon atoms, and may be partially fluorinated, and perfluoroalkoxy. It may be a group. In this embodiment, it is preferably a partially fluorinated fluorinated alkoxy group.
  • examples of the fluorinated alkoxy group of R f1 and R f2 include a group represented by —O— (CH 2 ) n f1- (C n f2 F 2n f2 +1 ).
  • the n f1 is an integer of 0 or more
  • n f2 is an integer of 1 or more.
  • n f1 is preferably 0 to 30, more preferably 0 to 15, and particularly preferably 0 to 5.
  • n f2 is preferably 1 to 30, more preferably 1 to 15, further preferably 1 to 10, and particularly preferably 1 to 6.
  • a fluorine-containing compound represented by the following general formula (2) can be used as the compound having a photosensitive protecting group.
  • R 1 represents a hydrogen atom or a linear, branched chain or cyclic alkyl group having 1 to 10 carbon atoms, and R f1 and R f2 are independently alkoxy groups and siloxy groups, respectively. Alternatively, it is a fluorinated alkoxy group.
  • description of R 1, R f1, R f2 are the same as the description of the R 1, R f1, R f2 of the general formula (1).
  • the fluorine-containing compound represented by the general formula (1) is preferably produced using the fluorine-containing compound represented by the general formula (2) as a raw material (intermediate).
  • Examples of the solvent used in the following steps include ethyl acetate, butyl acetate, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, tetrahydrofuran, dioxane, N, N-dimethylformamide, N, N-dimethylacetamide, benzene, toluene and acetonitrile. , Methylene chloride, chloroform, dichloroethane, methanol, ethanol, 1-propanol, 2-propanol, 1-butanol and the like. These may be used alone or in combination of two or more.
  • the fluorine-containing compound represented by the general formula (2) can be obtained, for example, by going through each of the following steps.
  • R 1, R f1 and R f2 are the same as R 1, R f1 and R f2 in the general formula (1), I-R f1 ', I -R f2' R in f1 ', R f2 ' are the same as those of R f1 and R f2 , respectively.
  • R 1, R f1 and R f2 are the same as R 1, R f1 and R f2 in the general formula (1).
  • R 1, R f1 and R f2 are the same as R 1, R f1 and R f2 in the general formula (1).
  • R 1, R f1, R f2 is as described for R 1, R f1, R f2 in the formula (1).
  • the fluorine-containing compound represented by the general formula (1) can be obtained, for example, by the following steps.
  • X description of R 1, R f1, R f2 , n is the same as the description of the X, the R 1, R f1, R f2 , n in the general formula (1).
  • the compound having a photosensitive protecting group As the compound having a photosensitive protecting group, the compound described in International Publication WO2015 / 029981 can be applied.
  • the exposure apparatus EX exposes the compound layer formed on the substrate FS by irradiating the substrate FS with the exposure light SP, and forms a parent liquid repellent pattern including the parent liquid region and the liquid repellent region. That is, the compound layer formed on the substrate FS has liquid repellency.
  • the photosensitive protecting group is eliminated, and the portion (region) from which the photosensitive protecting group is removed loses its liquid repellency and becomes liquid-friendly. ..
  • the pro-liquid repellent pattern is formed by forming the liquid-repellent portion and the pro-liquid repellent portion.
  • the exposure apparatus EX for example, a direct drawing type exposure apparatus that does not use a mask, a so-called raster scan type exposure apparatus, can be used.
  • the exposure apparatus EX can adjust the focal position by adjusting the optical system including the lens element GL. The configuration of the exposure apparatus will be described later.
  • the exposure light SP emitted from the exposure apparatus EX examples include ultraviolet rays and the like.
  • the exposure light SP preferably contains light having a wavelength included in the range of 200 to 450 nm, and more preferably contains light having a wavelength included in the range of 320 to 450 nm. Further, the exposure light SP is preferably light having a wavelength of 365 nm. Light having these wavelengths can efficiently desorb the above-mentioned photosensitive protecting group.
  • Light sources include low-pressure mercury lamps, high-pressure mercury lamps, ultra-high-pressure mercury lamps, xenon lamps, sodium lamps; gas lasers such as nitrogen, liquid lasers of organic dye solutions, and solid lasers containing rare earth ions in inorganic single crystals. Can be mentioned.
  • a light source other than the laser that can obtain monochromatic light light of a specific wavelength obtained by using an optical filter such as a bandpass filter or a cutoff filter for a wide band line spectrum or a continuous spectrum may be used. Since a large area can be irradiated at one time, a high-pressure mercury lamp or an ultra-high-pressure mercury lamp may be used as the light source.
  • the transport device TR transports the substrate FS.
  • the transport device TR includes a feed roller RL1, a take-up roller RL2, and a drive device AC.
  • the delivery roller RL1 is formed by winding an unprocessed substrate FS, and is arranged on the upstream side of the substrate FS in the transport direction.
  • the take-up roller RL2 is arranged on the downstream side in the transport direction of the substrate FS so as to take up the substrate FS that has been sent out from the feed-out roller RL1 and processed.
  • the drive device AC rotationally drives the take-up roller RL2.
  • the substrate FS can be moved in the transport direction by rotating the take-up roller RL2 to wind up the substrate FS.
  • the drive device AC may rotate the delivery roller RL1 so as to synchronize with the rotation of the take-up roller RL2.
  • one or a plurality of transfer rollers may be arranged below the moving substrate FS to guide the movement of the substrate FS.
  • the transfer roller is arranged below each of the coating device CT, the exposure device EX, and the inspection device DT, and includes a gap between the coating device CT and the substrate FS, a gap between the exposure device EX and the substrate FS, and the inspection device DT.
  • the gap with the substrate FS may be defined.
  • the transfer roller may be provided so as to be movable in the normal direction of the substrate FS so that the above-mentioned gap can be adjusted.
  • a resin film or a foil made of a metal or alloy such as stainless steel is used as the substrate FS.
  • the material of the resin film include polyolefin resin, polysilicone resin, polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, and polystyrene.
  • a resin containing at least one or more of the resin and the vinyl acetate resin may be used.
  • the thickness and rigidity (Young's modulus) of the substrate FS are, for example, a range in which the substrate FS does not have creases or irreversible wrinkles due to buckling when passing through a moving path facing the coating device CT.
  • the substrate FS may be within a range that does not cause creases or irreversible wrinkles due to buckling when passing through the moving path facing the exposure apparatus EX.
  • the substrate FS may receive heat in each process, it is preferable to select a substrate FS made of a material whose thermal expansion coefficient is not remarkably large.
  • the coefficient of thermal expansion can be suppressed by mixing the inorganic filler with the resin film.
  • the inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, silicon oxide or the like.
  • the substrate FS may be a single layer of ultrathin glass having a thickness of about 100 ⁇ m manufactured by a float method or the like, or a laminate obtained by laminating the above resin film, foil or the like on the ultrathin glass. It may be.
  • the flexibility of the substrate FS refers to the property that the substrate FS can be flexed without shearing or breaking even when a force of about its own weight is applied to the substrate FS. Flexibility also includes the property of bending by a force of about its own weight. Further, the degree of flexibility varies depending on the material, size, thickness of the substrate FS, the layer structure formed on the substrate FS, the environment such as temperature and humidity, and the like.
  • the substrate FS may buckle and crease when the substrate FS is correctly wound around a transfer direction changing member such as a delivery roller RL1, a take-up roller RL2, various transfer rollers, and a rotary drum provided in a moving path. If it can be conveyed smoothly without being damaged (tearing or cracking), it can be said that it is in the flexible range.
  • the inspection device DT provides information on the amount of desorption of the photosensitive protecting group (hereinafter, referred to as desorption amount-related information) in the region exposed by the exposure device EX (hereinafter referred to as the exposure area W) for each measurement point. get.
  • the region not exposed by the exposure apparatus EX is referred to as a non-exposure region N.
  • the inspection device DT can set coordinates in, for example, the transport direction of the substrate FS and the width direction of the substrate FS, and can set a measurement point for each set coordinate.
  • the inspection device DT transmits the measurement result to the control device CONT.
  • the inspection device DT includes, for example, an ultraviolet visible spectrophotometer, an infrared spectrophotometer, an atomic force microscope (AFM), a palpable step meter, an optical inspection device, a scanning electron microscope, and a contact angle meter.
  • an ultraviolet visible spectrophotometer an infrared spectrophotometer
  • an atomic force microscope AFM
  • a palpable step meter an optical inspection device
  • a scanning electron microscope and a contact angle meter.
  • Mass analyzers Mass analyzers, X-ray photoelectron spectrometers and other measuring instruments can be used.
  • the inspection device DT can specify the exposure area W and acquire the desorption amount-related information by acquiring the information regarding the position of the exposure area W on the surface of the substrate FS from the control device CONT or the like. is there. However, the inspection device DT may measure the non-exposed region N on the surface of the substrate FS.
  • an ultraviolet visible spectrophotometer When an ultraviolet visible spectrophotometer is used as the inspection device DT, information related to the amount of desorption can be obtained from a change in the absorption degree of predetermined ultraviolet light in the exposure region W. Since the photosensitive protecting groups are desorbed in the exposed region W, the number of photosensitive protecting groups is smaller than that in the non-exposed region N. Therefore, the desorption amount-related information can be obtained from the change in the degree of absorption of ultraviolet light due to the photosensitive protecting group. When an infrared spectrophotometer is used as the inspection device DT, information related to the amount of desorption can be obtained from the absorption change of a predetermined infrared light derived from a functional group in the exposure region W.
  • the number of photosensitive protecting groups is smaller than that in the non-exposed region N. Therefore, it is possible to irradiate a predetermined infrared light that can be absorbed by the functional group of the photosensitive protecting group and obtain the desorption amount-related information from the change in the absorption amount of the infrared light.
  • an atomic force microscope when used as the inspection device DT, information related to the amount of desorption can be acquired by the adhesive force in the exposure region W.
  • the adhesive force becomes large. Therefore, when an atomic force microscope is used, information related to the amount of desorption can be obtained from the change in the adhesive force of the cantilever in the exposure region W.
  • the cantilever of the atomic force microscope is used, for example, in a form in which the portion in contact with the exposure region W is sphere-shaped (spherical or curved) to prevent (suppress) the exposure region W from being scratched. You may.
  • FIGS. 2 (A) and 2 (B) are images showing an example of measurement results by an atomic force microscope. Note that FIGS. 2 (A) and 2 (B) are represented as one image by joining the four obtained images, respectively.
  • FIG. 2A shows an image that visualizes the measurement result when the adhesive force of the sphere type cantilever is 2000 mJ / cm 2 .
  • FIG. 2B shows an image that visualizes the measurement result when the adhesive force of the cantilever is 500 mJ / cm 2 .
  • the adhesive force of the exposed region W becomes larger than the adhesive force of the non-exposed region N.
  • the exposed region W appears as an image visualized in an manner corresponding to the amount of desorption of the photosensitive protecting group, unlike the non-exposed region N.
  • the exposed region W appears white with respect to the non-exposed region N, and it is confirmed that the exposed region W includes a portion having a different white color.
  • image processing for example, comparison processing of brightness and color with the threshold value
  • the photosensitive protecting group in the exposure region W can be distinguished while distinguishing between the exposure region W and the non-exposure region N.
  • the amount of desorption that is, information related to the amount of desorption
  • information related to the amount of desorption in the exposure region W may be acquired depending on the film thickness of the exposure region W. Further, when an atomic force microscope is used, information related to the amount of desorption in the exposure region W may be acquired from the change in the film thickness acquired by the contact of the cantilever with the exposure region W.
  • the inspection device DT When a palpation type profilometer is used as the inspection device DT, information related to the amount of desorption is acquired from the change in film thickness acquired when the contactor comes into contact with the exposure area W. Since the photosensitive protecting group is removed in the exposure region W, the film thickness is slightly reduced. Therefore, by detecting the change in the film thickness in the exposure region W, the desorption amount-related information can be acquired.
  • the desorption amount-related information is acquired from the change in the film thickness acquired by irradiating the exposure region W with light of a predetermined wavelength. Since the film thickness is slightly reduced in the exposure region W as described above, information related to the amount of desorption can be obtained by irradiating light of a predetermined wavelength and detecting the film thickness in the exposure region W. ..
  • a scanning electron microscope SEM
  • information related to the amount of desorption is acquired from changes in secondary electrons or backscattered electrons caused by irradiating the exposed region W with an electron beam.
  • the secondary electrons or backscattered electrons generated by irradiation with an electron beam differ depending on the amount of desorption of the photosensitive protecting group in the exposure region W. Therefore, by detecting changes in secondary electrons or backscattered electrons in the exposure region W, information related to the amount of desorption can be obtained.
  • a contact angle meter is used as the inspection device DT, information related to the amount of desorption is acquired by the contact angle or surface tension in the exposure region W.
  • the contact angle (static contact angle, dynamic contact angle, burr property) in a predetermined liquid (reagent) differs depending on the amount of desorption of the photosensitive protecting group in the exposure region W. Therefore, the desorption amount-related information can be acquired by detecting the change in the contact angle in the exposure region W.
  • the inspection device DT When a mass spectrometer is used as the inspection device DT, information related to the amount of desorption is acquired from the change in the mass detection intensity of the photosensitive protecting group in the exposure region W. Since the photosensitive protecting group is desorbed in the exposure region W, the mass detection intensity of the photosensitive protecting group changes. Therefore, the desorption amount-related information can be obtained by detecting the change in the mass detection intensity in the exposure region W.
  • an X-ray photoelectron spectrometer is used as the inspection device DT
  • information related to the amount of desorption is acquired from a change in the detection intensity of a predetermined element derived from a photosensitive protecting group in the exposure region W. Since the photosensitive protecting group is desorbed in the exposure region W, the detection intensity of a predetermined element derived from the photosensitive protecting group changes. Therefore, the desorption amount-related information can be obtained by detecting the intensity of the predetermined element in the exposure region W.
  • the control device CONT comprehensively controls the coating device CT, the exposure device EX, the transfer device TR, and the inspection device DT.
  • the control device CONT includes a coating control unit 61, an exposure control unit 62, a transfer control unit 63, and a determination unit 64.
  • the coating control unit 61 controls the operation of the coating device CT.
  • the exposure control unit 62 controls the operation of the exposure apparatus EX.
  • the transport control unit 63 controls the operation of the transport device TR.
  • the determination unit 64 determines whether the exposure is good or bad based on the measurement result of the inspection device DT.
  • the determination unit 64 determines whether or not the exposure is good or bad based on the information of the measurement points (for example, the information related to the amount of desorption) included in the predetermined region of the region (exposure region W) exposed by the exposure apparatus EX.
  • the determination unit 64 determines, for example, whether the exposure is good or bad based on the information related to the amount of desorption per unit area in the compound layer.
  • 3A and 3B are diagrams schematically showing an example of a procedure for determining the quality of exposure based on information related to the amount of desorption. 3 (A) and 3 (B) show a case where a part of the compound layer on the substrate FS is exposed to form an exposed region W and a non-exposed region N.
  • the determination unit 64 selects the exposed region W and the non-exposed region N in the compound layer, for example, by performing image processing on the images shown in FIGS. 2A and 2B.
  • the determination unit 64 divides the detected exposure region W into a predetermined unit region Wa.
  • the unit region Wa has a square shape, but is not limited to this shape, and may be, for example, a rectangle, another polygon such as a triangle, a circle, or an ellipse. , Oval or other shapes may be used.
  • the determination unit 64 sets the unit area Wa so that the areas are equal to each other, but it is not always necessary to make the areas of all the unit areas Wa equal.
  • Each unit area Wa contains measurement results for a plurality of measurement points detected by the inspection device DT.
  • the determination unit 64 divides the exposed region W into unit regions Wa having the same area, and then measures the measurement results at a plurality of measurement points for each unit region Wa (for example, in the case of an ultraviolet visible spectrophotometer, the absorbance and atomic force microscope). If so, the detachment amount related information is calculated based on the adhesive force).
  • the determination unit 64 may calculate the desorption amount-related information based on the average value of the measurement results at a plurality of measurement points, for example.
  • FIG. 3B shows an example in which the total of the measurement results for each unit region Wa is expressed in five stages from 1 to 5 as the desorption amount-related information. "1" has the smallest total measurement result, and "5" has the largest total measurement result.
  • the determination unit 64 compares the calculated desorption amount (numerical value of 1 to 5 in 5-step notation) with, for example, the threshold value set for each measuring device of the inspection device DT. Based on the comparison result, the determination unit 64 determines whether or not the photosensitive protecting group is sufficiently removed, that is, whether or not the exposure is good or bad. For example, when an ultraviolet visible spectrophotometer is used as the inspection device DT, the determination unit 64 determines that the unit region Wa is poorly exposed if the absorbance of the unit region Wa is equal to or greater than the threshold value. When an atomic force microscope is used as the inspection device DT, the determination unit 64 determines that the unit region Wa is poorly exposed if the adhesive force of the unit region Wa is equal to or less than the threshold value.
  • the determination unit 64 determines the quality of exposure in the exposure region W based on the evaluation for each unit region Wa. For example, when the number of unit regions Wa determined to be poorly exposed exceeds a predetermined ratio (for example, 20%, 40%, etc.) in the exposed region W, the determination unit 64 determines that the exposed region W is poorly exposed. If there is at least one unit region Wa determined to be poorly exposed, it may be determined that the exposed region W is poorly exposed.
  • the specific method for determining the quality of exposure in the exposure region W is not limited to the above method. Further, the determination unit 64 may determine the quality of the exposure for each unit region Wa, and may use the result as the determination result regarding the exposure of the exposure region W.
  • FIG. 4 is a flowchart showing an example of an exposure method by the exposure system 100.
  • a liquid for forming a compound layer which is a layer of a compound having a photosensitive protecting group, is applied onto the substrate FS by the coating device CT.
  • a compound layer is formed on the substrate FS.
  • a drying device for drying the substrate FS, a heating device for heating, and a cleaning device for further cleaning may be arranged.
  • the compound layer formed on the substrate FS reaches the exposure device EX on the downstream side in the transport direction as the substrate FS moves by the transport device TR.
  • the exposure apparatus EX irradiates the substrate FS coated with the compound layer with the exposure light SP to expose a predetermined region of the compound layer (step S01).
  • the exposure light SP which is spot light having a predetermined diameter, is scanned by the exposure device EX in the width direction of the substrate FS.
  • the exposure light SP is irradiated to a predetermined region over the transport direction and the width direction of the substrate FS, and the exposure region W is formed.
  • a part of the irradiation region of the exposure light SP may overlap.
  • the exposure apparatus EX may have a configuration in which the exposure light SP is collectively irradiated to a predetermined region instead of the configuration in which the exposure light SP is scanned.
  • the present invention is not limited to the form of irradiating the exposure light SP while transporting the substrate FS in the transport direction, and the exposure light SP is irradiated from the exposure apparatus EX with the movement of the substrate FS stopped to expose the next exposure region. It may be in the form of step-moving the substrate FS, such as moving it to the device EX.
  • the exposed region formed in the compound layer reaches the inspection device DT on the downstream side in the transport direction as the substrate FS moves by the transport device TR.
  • the inspection device DT acquires information related to the amount of desorption of the photosensitive protecting group in the exposure region W exposed by the exposure device EX for each measurement point (step S02).
  • the inspection device DT acquires the desorption amount-related information in the exposure region while transporting the substrate FS in the transport direction by the transport device TR.
  • the inspection device DT transmits the measurement result to the control device CONT.
  • the inspection device DT may acquire the desorption amount-related information at the timing when the substrate FS is stopped.
  • the control device CONT determines whether or not the exposure to the substrate FS is good or bad based on the measurement result from the inspection device DT (step S03).
  • the control device CONT first calculates information on measurement points (for example, information related to the amount of desorption) included in a predetermined area of the area (exposure area W) exposed by the exposure device EX.
  • the control device CONT calculates, for example, information related to the amount of desorption per unit area. Then, based on the calculated desorption amount-related information, the determination unit 64 of the control device CONT determines whether the exposure is good or bad.
  • the control device CONT may output the determination result by the determination unit 64 to a display device (not shown) or the like, or may output the determination result to an external management device or the like.
  • the user can easily confirm the quality of the exposure in the exposure region W by viewing the determination result by the determination unit 64 on a display device or the like.
  • FIG. 5 is a flowchart showing another example of the exposure method by the exposure system 100.
  • the exposure system 100 performs the processes of steps S01 to S03 in the same manner as described above.
  • the control device CONT detects whether or not the determination unit 64 has determined that the exposure is poor (step S04).
  • the exposure control unit 62 controls the exposure apparatus EX based on the calculated desorption amount related information (YES in step S04). Step S05).
  • the exposure control unit 62 changes the exposure conditions in, for example, the exposure apparatus EX.
  • the exposure conditions include, for example, changing the intensity of the exposure light SP at the time of exposure of the exposure apparatus EX, changing the focal position of the exposure light SP, changing the irradiation time of the exposure light SP, and so on. It includes at least one of changing the overlap amount of the exposure light SP.
  • the irradiation time of the exposure light can be changed, for example, by changing the scanning speed of the exposure light SP.
  • the exposure control unit 62 sets an appropriate exposure amount for the place according to, for example, a place where the exposure is poor in the exposure area W and the degree of the exposure failure (for example, the degree of insufficient exposure amount). Controls the intensity of exposure light, focal position, irradiation time, amount of overlap, etc. As a result, the exposure in the exposure apparatus EX is improved, and it is possible to eliminate the exposure defect in the exposure region W. If the determination unit 64 does not determine that the exposure is defective as a result of the detection in step S04 (NO in step S04), the control device CONT (exposure control unit 62) does not have to control the exposure device EX.
  • FIG. 6 is a flowchart showing another example of the exposure method by the exposure system 100.
  • the exposure system 100 performs the processes of steps S01 to S03 in the same manner as described above, and the determination unit 64 detects whether or not the exposure is defective (step S04).
  • the transfer control unit 63 determines that the substrate FS by the transfer device TR is based on the calculated desorption amount related information.
  • the transport speed is controlled (step S06).
  • the transfer control unit 63 can reduce the transfer speed of the substrate FS so that the irradiation time of the exposure light SP in the exposure apparatus EX becomes longer, for example. If, as a result of the detection in step S04, the determination unit 64 does not determine that the exposure is defective (NO in step S04), the control device CONT (transport control unit 63) does not have to control the transfer device TR.
  • the control device CONT has information for identifying the exposure region W determined to be the exposure defect (for example, the position on the substrate FS). May be obtained from the inspection device DT. Since the exposure region W determined to be poorly exposed is taken up by the take-up roller RL2 as it is, it is difficult to later identify which part is poorly exposed. By acquiring the information for specifying the exposure region W as described above, it is possible to take measures such as omitting a later step for this portion, and it is possible to improve the processing efficiency.
  • the exposure defect is determined by the determination unit 64 based on the measurement result of the inspection device DT, so that the user can determine the exposure defect by the determination unit 64. By confirming the judgment, it is possible to easily confirm the exposure defect.
  • FIG. 7 is a diagram showing an example of the exposure system 200 according to the second embodiment.
  • the exposure system 200 shown in FIG. 7 is similar to the exposure system 100 of the first embodiment in that it has a coating device CT, an exposure device EX, and a transfer device TR, but is provided with a plurality of inspection devices DT. It is different from the above-described embodiment.
  • the same components as those in the above-described embodiment are designated by the same reference numerals, and the description thereof will be omitted or simplified.
  • the plurality of inspection devices DT are arranged on the downstream side of the exposure device EX in the transport direction of the substrate FS.
  • FIG. 7 shows a configuration in which two inspection devices DT are arranged, the present invention is not limited to this form, and three or more inspection devices DT may be arranged.
  • the plurality of inspection devices DT the same inspection device DT may be used, or different inspection device DTs may be used.
  • the plurality of inspection devices DT are arranged side by side in the transport direction of the substrate FS, for example.
  • the inspection device DTa arranged on the upstream side in the transport direction of the substrate FS may be used as the main, and the inspection device DTb arranged on the downstream side may be used as a sub or backup, or a part of the exposure area W to be inspected. May be measured by the inspection device DTa on the upstream side, and the remaining portion of the exposure region W may be measured by the inspection device DTb on the downstream side.
  • FIG. 8 is a diagram showing another example of the exposure system according to the second embodiment.
  • FIG. 8 shows a state in which the substrate FS is viewed from above in the exposure system 200A.
  • two inspection devices DT are arranged side by side in the width direction (direction orthogonal to the transport direction) of the substrate FS.
  • One inspection device DTa measures a region from the center of the substrate FS in the width direction to one end side.
  • the other inspection device DTb measures the region from the center of the substrate FS in the width direction to the other end edge.
  • the inspection devices DTa and DTb transmit the measurement result to the control device CONT.
  • the control device CONT calculates the desorption amount related information based on the measurement results of the inspection devices DTa and DTb, and determines whether the exposure is good or bad.
  • FIG. 9 is a diagram showing another example of the exposure system according to the second embodiment.
  • FIG. 9 shows a state in which the substrate FS is viewed from above in the exposure system 200B.
  • the same number of exposure apparatus EX and inspection apparatus DT are provided, for example, three units each, and the exposure apparatus EX and the inspection apparatus DT are arranged correspondingly.
  • the description of the control device CONT is omitted.
  • one exposure apparatus EXa is arranged at the center of the substrate FS in the width direction. Further, the remaining two exposure devices EXb and EXc are arranged at both ends of the substrate FS in the width direction on the upstream side of the exposure device EXa in the transport direction of the substrate FS.
  • the exposure apparatus EXa irradiates the exposure light SP to the central region in the width direction of the substrate FS.
  • the exposure devices EXb and EXc irradiate the regions at both ends of the substrate FS in the width direction with the exposure light SP, respectively. Therefore, the exposure light SP is applied to the exposure region W by the three exposure apparatus EXa to EXc, sharing the respective regions of the center and both ends in the width direction of the substrate FS.
  • one inspection device DTa is arranged at the center in the width direction of the substrate FS. Further, on the upstream side of the inspection device DTa in the transport direction of the substrate FS, the remaining two inspection devices DTb and DTc are arranged at both ends in the width direction of the substrate FS. That is, the arrangement of the three inspection devices DTa to DTc is the same as the arrangement of the three exposure devices EXa to EXc.
  • the inspection device DTa measures the central region of the exposure region W in the width direction of the substrate FS.
  • the inspection devices DTb and DTc measure each of the exposed regions W at both ends in the width direction of the substrate FS. Therefore, the exposure region W is measured by the three inspection devices DTa to DTc, sharing each region in the center and both ends in the width direction of the substrate FS.
  • Each of the three inspection devices DTa to DTc transmits the measurement result to the control device CONT.
  • the control device CONT calculates the desorption amount related information based on the measurement results of the inspection devices DTa to DTc, and determines whether the exposure is good or bad. With this configuration, the control device CONT separately determines the quality of exposure for each of the three areas of the central region in the width direction and the regions at both ends of the substrate FS measured by the three inspection devices DTa to DTc. ..
  • the control device CONT controls the exposure devices EXa to EXc arranged in that area based on the desorption amount related information. It can be carried out. For example, the control device CONT controls the exposure device EXa based on the measurement result of the inspection device DTa, controls the exposure device EXb based on the measurement result of the inspection device DTb, and based on the measurement result of the inspection device DTc.
  • the exposure apparatus EXc may be controlled.
  • all the exposure devices EXa to EXc may be controlled, and it is determined that the exposure is poor.
  • the exposure devices EXa to EXc arranged in the non-exposed area may be controlled.
  • the processing load on one inspection device DT can be reduced.
  • the moving speed of the substrate FS can be increased, and the processing efficiency of the substrate FS can be improved.
  • FIG. 10 is a diagram showing an example of the exposure system 300 according to the third embodiment.
  • the exposure system 300 shown in FIG. 10 is similar to the exposure systems 100 and 200 of the above-described embodiment in that it has a coating device CT, a transfer device TR, and an inspection device DT, but a plurality of exposure devices EX are formed on the substrate FS. It differs from the above embodiment in that the transport direction is provided on the upstream side and the downstream side of the inspection device DT.
  • the same components as those in the above-described embodiment are designated by the same reference numerals, and the description thereof will be omitted or simplified.
  • the plurality of exposure devices EX include a first exposure device EX1 and a second exposure device EX2.
  • the first exposure apparatus EX1 is arranged on the upstream side of the substrate FS in the transport direction with respect to the inspection apparatus DT.
  • the second exposure apparatus EX2 is arranged on the downstream side of the substrate FS in the transport direction with respect to the inspection apparatus DT.
  • the first exposure apparatus EX1 and the second exposure apparatus EX2 have the same configuration as the above-mentioned exposure apparatus EX.
  • the first exposure apparatus EX1 and the second exposure apparatus EX2 may have the same configuration or different configurations.
  • the control device CONT includes a first exposure control unit 65 that controls the first exposure device EX1 and a second exposure control unit 66 that controls the second exposure device EX2.
  • FIG. 11 is a flowchart showing an example of an exposure method by the exposure system 300.
  • the exposure system 300 performs the processes of steps S01 to S03 in the same manner as in the above embodiment.
  • the exposure process in step S01 is performed by the first exposure apparatus EX1.
  • the control device CONT detects whether or not the determination unit 64 has determined that the exposure is poor (step S04).
  • step S04 When the determination unit 64 determines in step S04 that the exposure is poor (YES in step S04), the control device CONT reappears with the exposure region W determined by the determination unit 64 to be poor exposure by the second exposure device EX2.
  • the exposure is performed (step S07).
  • step S07 the second exposure control unit 66 controls the second exposure device EX2 based on the calculated desorption amount-related information.
  • the second exposure control unit 66 based on the calculated desorption amount related information, for example, the intensity of the exposure light SP at the time of exposure of the second exposure apparatus EX2, the focal position of the exposure light SP, and the irradiation time of the exposure light SP. , And the amount of overlap of the exposure light SP is adjusted.
  • the control device CONT is based on the calculated desorption amount related information in addition to causing the exposure by the second exposure device EX2. Therefore, the first exposure control unit 65 may control the first exposure device EX1 or the transfer device TR. Further, the control device CONT may control the exposure light SP by the second exposure device EX2 on the poorly exposed portion (for example, the unit area Wa shown in FIG. 3) in the exposure area W. Good. As a result, it is possible to avoid irradiation of the exposure light SP to the portion that does not need to be re-exposed by the second exposure apparatus EX2.
  • the second exposure apparatus EX2 re-exposes the poorly exposed exposure region W, so that the exposed region W remains poorly exposed. It is possible to prevent moving to the subsequent processing. As a result, it is possible to suppress a decrease in the yield in the substrate FS.
  • the inspection device DT is arranged on the downstream side of the second exposure device EX2, and whether or not an exposure defect has occurred by the determination unit 64 after the exposure by the second exposure device EX2 (exposure defect remains). Whether or not it is) may be determined.
  • FIG. 12 is a diagram showing an example of the exposure system 400 according to the fourth embodiment.
  • the exposure system 400 shown in FIG. 12 is different from the first to third embodiments described above in that it includes a plating device MK in addition to the coating device CT, the exposure device EX, the transport device TR, and the inspection device DT. There is.
  • the plating apparatus MK is arranged on the downstream side of the inspection apparatus DT in the transport direction of the substrate FS.
  • the plating apparatus MK performs a plating treatment (for example, electroless plating treatment) on the substrate FS on which the water-repellent pattern is formed by the exposure apparatus EX.
  • a plating treatment for example, electroless plating treatment
  • the plating apparatus MK has a plating catalyst tank MKa for performing a plating catalyst bath on the substrate FS, a plating tank MKb for performing plating on the substrate FS, and a plurality of transfer rollers MKc.
  • the plating catalyst tank MKa is arranged on the upstream side in the transport direction of the substrate FS, and applies the plating catalyst to the parent liquid portion of the parent liquid repellent pattern formed on the substrate FS. That is, in the exposed region W of the substrate FS, the photosensitive protecting group is desorbed and has positivity, and in the non-exposed region N, the photosensitive protecting group is not desorbed and thus has positivity. , The plating catalyst solution adheres to the exposed region W.
  • the plating catalyst solution stored in the plating catalyst tank MKa for example, any one required for electroless plating is selected and stored.
  • the plating tank MKb is arranged on the downstream side in the transport direction of the substrate FS, and electroless plating is performed on the parent liquid portion of the substrate FS to which the plating catalyst is applied. That is, since the plating catalyst is applied to the exposed region W of the substrate FS, this exposed region W plating process is performed. As a result, a wiring pattern is formed on the substrate FS by plating.
  • the substrate FS moves in the plating apparatus MK when the take-up roller RL2 winds up the substrate FS.
  • the plurality of transfer rollers MKc guide the substrate FS in the plating apparatus MK. Of the plurality of transport rollers MKc, at least one may be a drive roller and the rest may be driven rollers. By using one of the transfer rollers MKc as a drive roller, the transfer speed of the substrate FS can be changed in the plating apparatus MK.
  • the transfer roller MKc moves in the transfer direction of the substrate FS in the plating catalyst tank MKa or the plating tank MKb, so that the transfer distance of the substrate FS in the plating catalyst tank MKa or the transfer distance of the substrate FS in the plating tank MKb The length of is changeable.
  • the control device CONT has a plating control unit 67 that controls the plating device MK.
  • the plating control unit 67 can control the rotation speed of the transfer roller MKc (drive roller), that is, the transfer speed of the substrate FS in the plating apparatus MK.
  • the change in the transfer speed of the substrate FS changes the immersion time of the substrate FS in the plating catalyst tank MKa or the immersion time of the substrate FS in the plating tank MKb.
  • the plating control unit 67 moves the position of the movable transfer roller MKc, that is, the plating catalyst tank MKa. It is possible to control the transport distance of the substrate FS inside or in the plating tank MKb. Changing the transport distance of the substrate FS in the plating catalyst tank MKa or the plating tank MKb changes the immersion time of the substrate FS in the plating catalyst tank MKa or the immersion time of the substrate FS in the plating tank MKb.
  • FIG. 13 is a flowchart showing an example of an exposure method by the exposure system 400 according to the present embodiment.
  • the exposure system 400 performs the processes of steps S01 to S03 in the same manner as in the above embodiment.
  • the control device CONT detects whether or not the exposure region W is determined to be poor exposure by the determination unit 64 (step S04).
  • the determination unit 64 determines that the exposure is poor as a result of the detection in step S04 (YES in step S04)
  • the transport control unit 63 controls the plating apparatus MK based on the calculated desorption amount related information (YES in step S04). Step S08).
  • step S08 the plating control unit 67 controls, for example, the transfer speed of the substrate FS and the transfer distance of the substrate FS in the plating apparatus MK by adjusting the rotation speed and the position of the transfer roller MKc, for example, the plating catalyst.
  • the immersion time of the substrate FS in the tank MKa or the plating tank MKb is lengthened.
  • the rate of applying the plating catalyst per hour is low, but by lengthening the immersion time of the substrate FS in the plating catalyst tank MKa, the exposure region W is exposed to light. It is possible to supplement the application of the plating catalyst. Alternatively, even when the plating catalyst is not sufficiently applied to the exposure region W, the immersion time of the substrate FS in the plating tank MKb is increased to be sufficient for the exposure region W (sufficient as a wiring pattern). It is possible to form a plating.
  • FIG. 14 (A) and 14 (B) are diagrams showing an example of changing the transport distance of the substrate FS in the plating apparatus MK in the exposure system 400.
  • the transfer roller MKc is arranged so that the length of the transfer path is the shortest when the substrate FS is immersed in the plating catalyst tank MKa or the plating tank MKb.
  • the substrate FS is moved upward by moving the transfer roller MKc1 out of the plurality of transfer rollers MKc arranged in the plating catalyst tank MKa or the plating tank MKb. It moves in a state of meandering in the vertical direction in the plating catalyst tank MKa or the plating tank MKb. That is, the substrate FS has a longer transport path in the plating catalyst tank MKa or the plating tank MKb, and the immersion time in the plating catalyst tank MKa or the plating tank MKb can be lengthened.
  • the plating device MK is controlled to adjust the immersion time of the substrate FS in the plating catalyst tank MKa or the plating tank MKb (longer). Therefore, an appropriate plating process can be applied to the exposed region W determined to be poorly exposed. As a result, it is possible to suppress a decrease in the yield on the substrate FS by forming a desired wiring pattern in the exposure region W determined to be poorly exposed.
  • FIG. 15 is a diagram showing an example of the exposure system 500 according to the fifth embodiment.
  • the exposure system 500 shown in FIG. 15 includes an exposure device EX3 and an inspection device DT.
  • an XYZ Cartesian coordinate system with the gravity direction as the Z direction is set, and the X direction, the Y direction, and the Z direction will be described according to the arrows shown in the figure.
  • the direction pointed by the arrow will be described as the + direction (for example, the + X direction), and the opposite direction will be described as the ⁇ direction (for example, the ⁇ X direction).
  • the exposure system 500 is, for example, a part of a manufacturing system in which a manufacturing line for manufacturing flexible displays, flexible sensors, etc. as electronic devices is constructed.
  • a flexible display will be described as an electronic device.
  • the substrate FS is fed from a feeding roller (see the feeding roller RL1 in FIG. 1) in which a flexible sheet-shaped substrate (sheet substrate) FS is wound in a roll shape, and the substrate FS is sent out to the fed substrate FS.
  • the substrate FS after various treatments is wound up by a take-up roller (see the take-up roller RL2 in FIG. 1), that is, a so-called roll-to-roll (Roll To Roll) structure.
  • the substrate FS has a strip-like shape in which the transport direction of the substrate FS is the longitudinal direction (long) and the width direction is the lateral direction (short).
  • the substrate FS sent from the delivery roller is sequentially subjected to various processes by the process device PR1, the exposure device (drawing device, beam scanning device) EX4, the process device PR2, and the like, and is wound up by a take-up roll.
  • the X direction is a direction (transportation direction) from the process device PR1 to the process device PR2 via the exposure device EX3 in the horizontal plane.
  • the Y direction is a direction orthogonal to the X direction in the horizontal plane, and is a width direction (short direction) of the substrate FS.
  • the Z direction is a direction (upward) orthogonal to the X direction and the Y direction, and is parallel to the direction in which gravity acts.
  • the process device PR1 performs the pre-process processing on the substrate FS to be exposed by the exposure device EX.
  • the process apparatus PR1 sends the substrate FS processed in the previous process to the exposure apparatus EX.
  • the substrate FS sent to the exposure apparatus EX by the process of this previous step is a substrate on which the resist layer R is formed on the surface thereof.
  • the exposure device EX3 as a beam scanning device is a direct drawing type exposure device that does not use a mask, that is, a so-called raster scan type exposure device.
  • the exposure apparatus EX3 irradiates the irradiated surface (exposure region W) of the substrate FS supplied from the process apparatus PR1 with an optical pattern corresponding to a predetermined pattern for an electronic device for a display, a circuit, wiring, or the like. To do.
  • the exposure apparatus EX3 scans the exposure light SP of the beam LB for exposure one-dimensionally in a predetermined scanning direction (Y direction) on the irradiated surface of the substrate FS while transporting the substrate FS in the + X direction.
  • the intensity of the exposure light SP is modulated (on / off) at high speed according to the pattern data (drawing data).
  • pattern data drawing data
  • an optical pattern corresponding to a predetermined pattern such as an electronic device, a circuit, or a wiring is drawn and exposed on the irradiated surface of the substrate FS.
  • the exposure light SP is relatively two-dimensionally scanned on the irradiated surface of the substrate FS, and a predetermined pattern is drawn and exposed on the substrate FS. Further, since the substrate FS is conveyed along the conveying direction (+ X direction), the exposure regions W where the pattern is exposed by the exposure apparatus EX are spaced apart from each other along the long direction of the substrate FS. Multiple will be provided. Since the electronic device is formed in the exposure region W, the exposure region W is also an electronic device formation region. Since the electronic device is configured by superimposing a plurality of pattern layers (layers on which patterns are formed), the pattern corresponding to each layer may be exposed by the exposure apparatus EX3.
  • the process apparatus PR2 performs post-process processing (for example, plating processing, development / etching processing, etc.) on the substrate FS exposed by the exposure apparatus EX3.
  • post-process processing for example, plating processing, development / etching processing, etc.
  • a pattern layer for example, a wiring pattern layer of an electronic device is formed on the substrate FS.
  • the electronic device is configured by superimposing a plurality of pattern layers, one pattern layer is generated through at least each process of the device manufacturing system including the exposure system 500. Therefore, in order to generate an electronic device, each process of the device manufacturing system including the exposure system 500 as shown in FIG. 15 must be performed, for example, twice. Therefore, for example, the pattern layer can be laminated by mounting the take-up roller on which the substrate FS is taken up as a delivery roller on another device manufacturing system. By repeating such an operation, an electronic device is formed.
  • the processed substrate FS is in a state in which a plurality of electronic device forming regions are connected along the elongated direction of the substrate FS at predetermined intervals. That is, the substrate FS is a substrate for multi-chamfering.
  • the exposure apparatus EX3 is stored in the temperature control chamber ECV. By keeping the inside of the temperature control chamber ECV at a predetermined temperature, the shape change of the substrate FS conveyed inside is suppressed due to the temperature.
  • the temperature control chamber ECV is arranged on the installation surface E of a manufacturing factory or the like via passive or active vibration isolation units SU1 and SU2.
  • the vibration isolation units SU1 and SU2 reduce vibration from the installation surface E.
  • the installation surface E may be the floor surface of the factory itself, or may be a surface on the installation base installed on the floor surface in order to create a horizontal surface.
  • the exposure device EX3 includes a substrate transfer mechanism 12, a light source device 14, a beam switching member 16, an exposure head 18, a control device 20, and a plurality of alignment microscopes AMm (AM1 to AM4).
  • the substrate transfer mechanism 12 conveys the substrate FS conveyed from the process apparatus PR1 at a predetermined speed in the exposure apparatus EX3, and then sends the substrate FS to the process apparatus PR2 at a predetermined speed.
  • the substrate transport mechanism 12 defines a moving path of the substrate FS transported in the exposure apparatus EX3.
  • the substrate transport mechanism 12 includes an edge position controller EPC, a drive roller R1, a tension adjusting roller RT1, a rotary drum (cylindrical drum) DR, and a tension adjusting roller RT2 in order from the upstream side ( ⁇ X direction side) of the substrate FS in the transport direction. It has a drive roller R2 and a drive roller R3.
  • the substrate transfer mechanism 12 conveys the substrate FS conveyed from the process apparatus PR1 at a predetermined speed in the exposure apparatus EX3, and then sends the substrate FS to the process apparatus PR2 at a predetermined speed.
  • the substrate transport mechanism 12 defines a moving path of the substrate FS transported in the exposure apparatus EX3.
  • the substrate transfer mechanism 12 includes an edge position controller EPC, a drive roller R1, a tension adjustment roller RT1, a rotary drum DR, a tension adjustment roller RT2, and a drive roller R2 in order from the upstream side ( ⁇ X direction side) of the substrate FS in the transfer direction. It also has a drive roller R3.
  • the light source device 14 has a light source (pulse light source) and emits a pulsed beam (pulse light, laser) LB.
  • the beam LB is, for example, ultraviolet light having a peak wavelength in a wavelength band of 370 nm or less, and the oscillation frequency (emission frequency) of the beam LB is Fs.
  • the beam LB emitted by the light source device 14 is incident on the exposure head 18 via the beam switching member 16.
  • the light source device 14 emits and emits a beam LB at an oscillation frequency Fs according to the control of the control device 20.
  • the light source device 14 includes, for example, a semiconductor laser element that generates pulsed light in the infrared wavelength region, a fiber amplifier, and a wavelength conversion element (harmonic) that converts amplified pulsed light in the infrared wavelength region into pulsed light in the ultraviolet wavelength region.
  • a fiber amplifier laser light source is used, which is composed of a wave generating element) or the like, has an oscillation frequency of several hundred MHz, and can obtain high-intensity ultraviolet pulsed light having a emission time of one pulsed light of about picoseconds.
  • the beam LB from the light source device 14 is incident on one scanning unit Un that performs one-dimensional scanning of the exposure light SP.
  • the optical path of the beam LB is switched so as to be performed.
  • the exposure head 18 includes a plurality of scanning units Un (U1 to U6) into which the beam LB is incident.
  • the exposure head 18 draws a pattern on a part of the substrate FS supported by the circumferential surface of the rotating drum DR by a plurality of scanning units Un (U1 to U6).
  • the exposure head 18 is a so-called multi-beam type exposure head in which a plurality of scanning units Un (U1 to U6) having the same configuration are arranged. Since the exposure head 18 repeatedly performs pattern exposure for electronic devices on the substrate FS, the exposure region W (electronic device forming region) on which the pattern is exposed is a predetermined along the longitudinal direction of the substrate FS. Multiple are provided at intervals.
  • the odd-numbered scanning units U1, U3, and U5 are arranged on the upstream side ( ⁇ X direction side) of the substrate FS in the transport direction with respect to the central surface Poc, and are arranged along the Y direction.
  • the even-numbered scanning units U2, U4, and U6 are arranged on the downstream side (+ X direction side) of the substrate FS in the transport direction with respect to the central surface Poc, and are arranged along the Y direction.
  • the odd-numbered scanning units U1, U3, and U5 and the even-numbered scanning units U2, U4, and U6 are provided symmetrically with respect to the central surface Poc.
  • the scanning unit Un projects the beam LB from the light source device 14 on the irradiated surface of the substrate FS so as to converge on the exposure light SP, and causes the exposure light SP to be linear on the irradiated surface of the substrate FS.
  • a single drawing line (scanning line) SLn (SL1 to SL6) is scanned one-dimensionally by a rotating polygon mirror.
  • An inspection device DT is arranged on the downstream side of the scanning unit Un. The inspection device DT measures information on the amount of desorption of the photosensitive protecting group in the exposure region W of the substrate FS moving along the outer peripheral surface of the rotating drum DR for each measurement point. The measurement result by the inspection device DT is sent to the control device 20.
  • the inspection device DT can acquire information on the amount of desorption of the photosensitive protecting group in the exposure region W.
  • the inspection device DT is not limited to being arranged so as to face the substrate FS that moves by the rotating drum DR.
  • the inspection device DT may be arranged so as to face the substrate FS that moves downstream from the rotary drum DR.
  • FIG. 16 is a diagram showing an example of the exposure apparatus EX4 according to the sixth embodiment.
  • the same components as those in the above-described embodiment are designated by the same reference numerals, and the description thereof will be omitted or simplified.
  • the exposure system 600 includes an exposure apparatus EX4.
  • the exposure apparatus EX4 includes an inspection apparatus DT, unlike the above-described embodiment.
  • the inspection device DT is provided in the exposure device EX4 on the downstream side in the transport direction of the substrate FS with respect to the portion irradiated with the exposure light SP.
  • the exposure apparatus EX4 exposes the exposure region W with the exposure light SP, and acquires information on the amount of desorption of the photosensitive protecting group in the exposure region W by the inspection apparatus DT. That is, it is possible to acquire information on the amount of desorption of the photosensitive protecting group in the exposure region W immediately after the exposure region W is exposed by the exposure light SP.
  • Information on the amount of desorption of the photosensitive protecting group acquired by the inspection device DT is sent to a control device (not shown) provided in the exposure device EX4 or a control device (not shown) provided outside the exposure device EX4.
  • This control device may include the determination unit 64 described above.
  • the control device may control the exposure conditions (for example, the intensity of the exposure light SP, the moving speed of the substrate FS, etc.) in the exposure device EX4. ..
  • the inspection device DT provided in the exposure device EX4 acquires information on the amount of desorption of the photosensitive protecting group, it is not necessary to arrange the inspection device DT outside the exposure device EX4. As a result, the length of the substrate FS in the transport direction (that is, the length of the electronic device manufacturing line in the substrate FS) can be shortened. Further, the measurement result of the inspection device DT provided in the exposure device EX4 is obtained by using a device other than the exposure device EX4 (for example, another exposure device arranged on the upstream side and the downstream side of the exposure device EX4, process devices PR1, PR2, etc.). It may be used as information for controlling.
  • a device other than the exposure device EX4 for example, another exposure device arranged on the upstream side and the downstream side of the exposure device EX4, process devices PR1, PR2, etc.
PCT/JP2019/011101 2019-03-18 2019-03-18 露光システム、露光装置、及び露光方法 WO2020188681A1 (ja)

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PCT/JP2019/011101 WO2020188681A1 (ja) 2019-03-18 2019-03-18 露光システム、露光装置、及び露光方法
CN202080021585.9A CN113574459B (zh) 2019-03-18 2020-03-18 曝光系统、曝光装置以及曝光方法
JP2021507402A JP7310879B2 (ja) 2019-03-18 2020-03-18 露光システム、露光装置及び露光方法
KR1020217030345A KR20210129171A (ko) 2019-03-18 2020-03-18 노광 시스템, 노광 장치, 및 노광 방법
TW109109005A TWI810444B (zh) 2019-03-18 2020-03-18 曝光系統、曝光裝置及曝光方法
PCT/JP2020/012066 WO2020189729A1 (ja) 2019-03-18 2020-03-18 露光システム、露光装置、及び露光方法

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017057427A1 (ja) * 2015-09-29 2017-04-06 株式会社ニコン 製造システム
JP2017166003A (ja) * 2016-03-14 2017-09-21 オーエム産業株式会社 めっき品の製造方法
WO2018008610A1 (ja) * 2016-07-08 2018-01-11 旭硝子株式会社 感光性組成物、重合体の製造方法、感光性組成物の製造方法、積層体の製造方法
WO2018225549A1 (ja) * 2017-06-05 2018-12-13 セントラル硝子株式会社 含フッ素単量体、含フッ素重合体およびそれを用いたパターン形成用組成物、並びにそのパターン形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09257457A (ja) * 1996-03-18 1997-10-03 Matsushita Electron Corp パターン形状計測方法およびパターン位置計測方法
EP1736477A4 (en) 2003-12-04 2008-11-26 Asahi Glass Co Ltd FLUOROUS CONNECTION, WASTE WASTE COMPOSITION AND THIN FILM
TWI485517B (zh) * 2007-04-18 2015-05-21 Daikin Ind Ltd 撥液阻劑組成物
JP5254381B2 (ja) * 2011-02-23 2013-08-07 株式会社東芝 パターン形成方法
JP6118761B2 (ja) * 2014-06-05 2017-04-19 富士フイルム株式会社 被検物質測定キット及び被検物質の測定方法
JP6531622B2 (ja) * 2015-11-02 2019-06-19 株式会社ニコン 円筒状マスク、露光装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017057427A1 (ja) * 2015-09-29 2017-04-06 株式会社ニコン 製造システム
JP2017166003A (ja) * 2016-03-14 2017-09-21 オーエム産業株式会社 めっき品の製造方法
WO2018008610A1 (ja) * 2016-07-08 2018-01-11 旭硝子株式会社 感光性組成物、重合体の製造方法、感光性組成物の製造方法、積層体の製造方法
WO2018225549A1 (ja) * 2017-06-05 2018-12-13 セントラル硝子株式会社 含フッ素単量体、含フッ素重合体およびそれを用いたパターン形成用組成物、並びにそのパターン形成方法

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