WO2020184705A1 - Procédé de fabrication d'une cellule solaire de type à contact arrière - Google Patents

Procédé de fabrication d'une cellule solaire de type à contact arrière Download PDF

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WO2020184705A1
WO2020184705A1 PCT/JP2020/011062 JP2020011062W WO2020184705A1 WO 2020184705 A1 WO2020184705 A1 WO 2020184705A1 JP 2020011062 W JP2020011062 W JP 2020011062W WO 2020184705 A1 WO2020184705 A1 WO 2020184705A1
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silicon substrate
crystalline silicon
layer
electrode
aluminum
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PCT/JP2020/011062
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English (en)
Japanese (ja)
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紹太 鈴木
マルワン ダムリン
山口　昇
英夫 鈴木
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東洋アルミニウム株式会社
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Priority to CN202080020891.0A priority Critical patent/CN113597682A/zh
Publication of WO2020184705A1 publication Critical patent/WO2020184705A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method for manufacturing a back contact type solar cell.
  • an electrode on the light receiving surface (main surface) side of the solar cell and an electrode on the back surface side are provided.
  • the amount of incident sunlight is reduced by the area of the electrode because the electrode reflects and absorbs sunlight.
  • the back contact type solar cell not only the wiring resistance can be reduced and the power loss can be reduced by consolidating the wiring on the back surface side, but also it is not necessary to provide an electrode on the light receiving surface. It is possible to widen and take in a lot of light.
  • a concave-convex shape is formed on the surface of the light receiving surface of the crystalline silicon substrate by texture etching or a release resin, a dielectric layer is formed so as to be in contact with the entire surface of the crystalline silicon substrate, and an insulating layer is further formed.
  • a solar cell in which the short circuit between the p electrode and the n electrode is reduced by repeating patterning and etching in order to form an n + layer and a p + layer on the back surface of the crystalline silicon substrate is disclosed. (For example, Patent Document 1).
  • Patent Document 1 it is necessary to repeat patterning and etching in order to form the n + layer and the p + layer, which increases the number of manufacturing steps. In addition, there is a high risk that the adhesive due to printing, curing, and peeling of the peeling resin remains, and it takes time to clean the residue. Further, a thin-film deposition method or a sputtering method is used to form the n + layer and the p + layer, and such a method also requires a long processing time.
  • an object of the present invention is to provide a method for manufacturing a back contact type solar cell, which can be carried out with a smaller number of steps than the conventional manufacturing method.
  • the present inventors have reduced the number of steps as compared with the conventional manufacturing method according to the manufacturing method having a specific step using the ion implantation method using a mechanical hard mask. It was found that a back contact type solar cell can be manufactured in Japan. The present inventors have further studied based on such findings and have completed the present invention.
  • the present invention relates to the following method for manufacturing a back contact type solar cell.
  • 1. A method for manufacturing back-contact solar cells.
  • Step (A) of partially forming an n + layer on the back surface of a crystalline silicon substrate by an ion implantation method using a mechanical hard mask and activation annealing.
  • a method for manufacturing a back-contact type solar cell which comprises the following in order. 2.
  • Item 2. The production method according to Item 1, wherein the step (C) and the step (C') are in no particular order. 3.
  • Item 2 The production method according to Item 2, wherein a copper electrode or an aluminum alloy electrode is formed in place of the silver electrode in the step (C'). 4.
  • the aluminum electrode is formed by firing a coating film of an aluminum paste containing 2 to 20 parts by mass of an organic vehicle and 0.15 to 15 parts by mass of a glass frit with respect to 100 parts by mass of aluminum powder at 650 to 900 ° C. , The production method according to any one of the above items 1 to 3. 5.
  • Item 2 The manufacturing method according to Item 2, wherein the aluminum electrodes and the silver electrodes are formed so as to be alternately arranged on the back surface side of the crystalline silicon substrate.
  • the manufacturing method of the back contact type solar cell of the present invention it is not necessary to repeat patterning and etching in order to form the n + layer and the p + layer, and the back contact type solar cell can be backed up with a smaller number of steps than the conventional manufacturing method. It is possible to manufacture contact type solar cells. Therefore, there is a great advantage in terms of manufacturing cost of the back contact type solar cell.
  • the n + layer on the back surface of the crystalline silicon substrate by the ion implantation method using a mechanical hard mask and activation annealing, the effect that leakage current (power loss) can be suppressed as compared with the conventional manufacturing method. Can also be obtained.
  • the method for manufacturing a back contact type solar cell of the present invention is Step (A) of partially forming an n + layer on the back surface of a crystalline silicon substrate by an ion implantation method using a mechanical hard mask and activation annealing.
  • steps (B) obtained in the step (A) for forming a passivation film on both surfaces of the crystalline silicon substrate having the n + layer, and the passivation film formed on the back surface side of the crystalline silicon substrate are characterized by having.
  • the method for producing a back-contact type solar cell of the present invention having the above characteristics, it is not necessary to repeat patterning and etching in order to form the n + layer and the p + layer, which is less than that of the conventional manufacturing method.
  • Back contact type solar cells can be manufactured by the number of processes. Therefore, there is a great advantage in terms of manufacturing cost of the back contact type solar cell.
  • the effect that leakage current (power loss) can be suppressed as compared with the conventional manufacturing method. Can also be obtained.
  • the n + layer 20 is partially formed on the back surface of the crystalline silicon substrate 10 (FIG. 1 (a)) by an ion implantation method using a mechanical hard mask and activation annealing (FIG. 1 (b)). ).
  • FIG. 1 (b) 30 is a portion that does not form an n + layer.
  • a known crystalline silicon substrate used for a back contact type solar cell can be widely adopted, and there is no particular limitation. Further, either an n-type silicon semiconductor substrate or a p-type silicon semiconductor substrate may be used, and can be appropriately selected depending on the desired use and specifications of the solar cell.
  • one side of the crystalline silicon substrate is referred to as a main surface (light receiving surface when used as a cell), and the other surface is referred to as a back surface.
  • the crystalline silicon substrate may be wet-etched with an alkaline solution or the like in advance for the purpose of removing the damaged layer on the cut surface and forming a texture.
  • the thickness of the crystalline silicon substrate is not particularly limited, but can be, for example, 100 to 250 ⁇ m, preferably 150 to 200 ⁇ m.
  • a known technique can be used for the ion implantation method for forming the n + layer.
  • an ion implantation method using a mechanical hard mask is particularly used.
  • the mechanical hard mask is used to partially provide the n + layer on the back surface of the crystalline silicon substrate.
  • Examples of the mechanical hard mask include a mechanical hard mask in which openings having a width of 700 ⁇ m and closed portions having a width of 300 ⁇ m are alternately arranged. In this case, as shown in FIG. 1B, for example, a mechanical hard mask having a width of 700 ⁇ m.
  • the n + layers 20 are formed in a pattern with an interval of 30 of 300 ⁇ m.
  • a known mechanical hard mask can be used, and examples of the material include carbon-based, silicon-based, copper-based, and quartz-based.
  • a technique of using PH 3 (phosphine) as a raw material to generate plasma, ionize it, and then irradiate it as an ion beam onto a crystalline silicon substrate can be used.
  • a mechanical hard mask is used to separate the part to be irradiated with the ion beam and the part not to be irradiated with the ion beam.
  • a known mass-separation type ion implantation device or non-mass separation type ion implantation device can be used as the ion implantation method.
  • FIG. 5 shows a schematic view of a non-mass separation type ion implanter. The outline is as follows.
  • the ion implantation apparatus 1000 shown in FIG. 5 includes a vacuum chamber 1001 (lower vacuum chamber), a vacuum chamber 1002 (upper vacuum chamber), an insulating member 1003, a stage 1004, and a gas supply source 1005.
  • the ion implantation device 1000 further includes an RF introduction coil 1100, a permanent magnet 1101, an RF introduction window (quartz window) 1102, an electrode 1200, an electrode 1201, a DC power supply 1300, and an AC power supply 1301.
  • the vacuum tank 1002 has a smaller diameter than the vacuum tank 1001 and is provided on the vacuum tank 1001 via an insulating member 1003.
  • the vacuum chamber 1001 and the vacuum chamber 1002 can be maintained in a reduced pressure state by a vacuum exhaust means such as a turbo molecular pump.
  • the stage 1004 is provided in the vacuum chamber 1001.
  • the stage 1004 can support the substrate S1.
  • a heating mechanism for heating the substrate S1 may be provided in the stage 1004.
  • the substrate S1 is a crystalline silicon substrate used in the manufacturing method of the present invention.
  • a gas for ion implantation is introduced into the vacuum chamber 1002 by the gas supply source 1005.
  • the RF introduction coil 1100 is arranged on the RF introduction window 1102 so as to surround the permanent magnet 1101.
  • the shape of the permanent magnet 1101 is ring-shaped.
  • the shape of the RF introduction coil 1100 is a coil shape.
  • the diameter of the RF introduction coil 1100 can be appropriately set according to the size of the substrate S1.
  • the electrode 1200 is an electrode having a plurality of openings (for example, a mesh electrode) and is supported by the insulating member 1003.
  • the potential of the electrode 1200 is a floating potential. As a result, stable plasma 1010 is generated in the space surrounded by the vacuum chamber 1002 and the electrode 1200.
  • another electrode 1201 having a plurality of openings is arranged under the electrode 1200.
  • the electrode 1201 faces the substrate S1.
  • a DC power supply 1300 is connected between the electrode 1201 and the RF introduction coil 1100, and a negative potential (acceleration voltage) is applied to the electrode 1201.
  • a negative potential acceleration voltage
  • the extracted positive ions can pass through the mesh-shaped electrodes 1200 and 1201 and reach the substrate S1.
  • the accelerating voltage of positive ions can be set in the range of 1 kV or more and 30 kV or less, for example.
  • a bias power supply capable of adjusting the acceleration voltage may be connected to the stage 1004.
  • a gas containing an impurity element (n-type impurity element) to be injected into the substrate S1 is introduced into the vacuum chamber 1002.
  • Plasma 1010 is formed in the vacuum chamber 1002 by this gas, and n-type impurity ions in the plasma 1010 are injected into the substrate S1.
  • the n-type impurity ion is, for example, at least one such as P, PX + , PX 2+ , and PX 3+ .
  • "X" is either hydrogen or halogen (F, Cl).
  • the means for forming the plasma 1010 is not limited to the ICP method, but may be an electron Cyclotron resonance plasma method, a helicon wave plasma method, or the like. Further, when the n-type impurity ion is implanted into the substrate S1, even if a gas containing hydrogen (for example, PH 3 , BH 2, etc.) is added to the ion implantation gas from the viewpoint of repairing the lattice defects of the substrate S1. Good.
  • a gas containing hydrogen for example, PH 3 , BH 2, etc.
  • the conditions for activation annealing are not limited, but the temperature is preferably 600 to 1000 ° C, more preferably 700 to 900 ° C.
  • the atmosphere during annealing preferably has a step of setting the oxygen concentration to 1 to 100%, and more preferably 5 to 50%.
  • the thickness of the n + layer is not particularly limited, but is preferably 0.1 to 2 ⁇ m, and more preferably 0.3 to 1 ⁇ m.
  • the passivation film 40 is formed on both surfaces (main surface and back surface) of the crystalline silicon substrate having the n + layer obtained in the step (A) (FIG. 1 (c)). That is, for the portion 20 forming the n + layer in the step (A) a passivation film is formed on the n + layer, the existent parts 30 of the n + layer forms a passivation film on the crystalline silicon substrate.
  • the passivation film is not particularly limited as long as it has a passivation effect due to a fixed charge in the solar cell of the present invention.
  • one or more selected from the group consisting of a silicon nitride film, a silicon oxide film, an aluminum oxide film, an amorphous silicon film, and a microcrystalline silicon film can be exemplified. These films may be a single layer having only one layer, or a plurality of various layers may be laminated.
  • the method for forming the passivation film is not particularly limited, and for example, various chemical vapor deposition methods or sputtering methods such as a plasma CVD method, a normal pressure CVD method for semiconductors, and an ALD method (atomic layer deposition method) can be exemplified. it can. More specifically, a method of forming a passivation film made of aluminum oxide by the ALD method using trimethylaluminum as a raw material can be mentioned.
  • the thickness of the passivation film is not particularly limited, but is preferably 10 to 200 nm, more preferably 15 to 50 nm, from the viewpoint of the passivation effect and the workability of the passivation film removing step described later. It is preferable that the surface of the passivation film is further provided with an antireflection film, and the antireflection film can be obtained by forming a silicon nitride film on the surface of the passivation film in an atmosphere of silane gas and ammonia gas, for example, by a plasma CVD method. Be done.
  • step (C) a part or all of the region directly covering the crystalline silicon substrate in the passivation film formed on the back surface side of the crystalline silicon substrate is removed (FIG. 1 (d)) and exposed.
  • One or more aluminum electrodes 60B are formed on the crystalline silicon substrate 50 (FIG. 1 (f)).
  • the passivation film is removed at a plurality of locations, it is preferable to provide one aluminum electrode for each exposed portion of the crystalline silicon substrate.
  • the portion from which the passivation film is removed may be a part or the entire region of the passivation film formed on the back surface side of the crystalline silicon substrate, which directly covers the crystalline silicon substrate.
  • the method for removing the passivation film is not particularly limited, and examples thereof include an etching paste and a method of irradiating a laser beam.
  • FIG. 1 (d) As a method for forming the aluminum electrode 60B on the exposed crystalline silicon substrate 50 (FIG. 1 (d)) from which the passivation film has been removed, a known method can be widely adopted, and there is no particular limitation. Specifically, a method of applying aluminum paste 60A to the exposed crystalline silicon substrate 50 by an appropriate method such as coating and firing can be exemplified (FIG. 1 (e) shows a state before firing, and FIG. 1 shows. (F) shows the state after firing.). By such a method, an aluminum-silicon alloy layer 60C and a BSF layer 60D are formed on the crystalline silicon substrate 10 (FIG. 1 (f)). In FIG. 1 (f), the aluminum paste is fired to form an aluminum-silicon alloy layer and a BSF layer on a crystalline silicon substrate, forming an aluminum electrode 60B.
  • the firing temperature of the aluminum paste is not particularly limited, but is preferably 650 to 900 ° C., for example.
  • the composition of the aluminum paste is not particularly limited, but for example, it is a paste containing 2 to 20 parts by mass of an organic vehicle containing a resin or an organic solvent and 0.15 to 15 parts by mass of a glass frit with respect to 100 parts by mass of aluminum powder. Is preferable.
  • the aluminum powder may be high-purity aluminum, but may be an aluminum alloy, and an aluminum silicon alloy and an aluminum silicon magnesium alloy are preferably used.
  • the shape and size of the aluminum electrode are preferably 40 ⁇ m to 200 ⁇ m in width because it is necessary to cover the exposed crystalline silicon substrate, and the higher the electrode height is, the better in order to lower the resistance value of the electrode.
  • the step (C') is one of the regions of the passivation film formed on the back surface side of the crystalline silicon substrate after the step (B) in which the crystalline silicon substrate is covered with the n + layer. It is a step of removing a portion and forming one or more silver electrodes 70B on the exposed n + layer (FIG. 1 (f)), and the steps (C) and (C') are in no particular order. ..
  • the passivation film is removed at a plurality of locations, it is preferable to provide one silver electrode for each exposed portion of the n + layer.
  • either the step (C) or the step (C') may be carried out first.
  • the method for removing the passivation film is not particularly limited.
  • a paste (so-called fire-through type silver paste) to which a component for removing the passivation film is added is applied to silver paste 70A and baked in the range of 550 to 900 ° C.
  • a method of forming a silver electrode while removing the passivation film directly under the paste (method of FIG. 1 (e) ⁇ FIG. 1 (f)), a method of applying an etching paste, a method of irradiating a laser beam, etc. are mentioned. Can be done.
  • silver paste 70A is applied to the surface of the passivation film and then fired in the range of 550 to 900 ° C.
  • the silver electrode 70B can be formed on the exposed n + layer while removing the passivation film immediately under the coating.
  • the composition of the silver paste is not particularly limited, but for example, 100 parts by mass of silver powder, 0.1 to 10 parts by mass of glass frit, and 3 to 15 parts by mass of an organic vehicle containing a resin and / or an organic solvent. It is preferable that the paste contains a portion.
  • the silver powder may be in the form of flakes, but may be spherical powder, and spherical powder is preferably used.
  • the silver electrode is formed in this step, instead of the silver electrode, a copper electrode or an aluminum alloy electrode (unlike the aluminum electrode formed in the step (C)), "aluminum electrode” and “aluminum” are used in the present specification.
  • the term “alloy electrode” is distinguished.) May be formed. As described above, in the present invention, a wide range of techniques known in the technical field of solar cells can be applied.
  • the shape and size of the silver electrode it is preferable to print a straight line of 50 to 130 ⁇ m so that the aluminum electrode and the comb teeth are arranged.
  • Example 1 A crystalline silicon substrate made of p-type single crystal silicon was prepared (FIG. 1 (a)) (substrate: 6 inches, thickness 200 ⁇ m). The surface of the crystalline silicon substrate was wet-etched with potassium hydroxide for the purpose of removing the damaged layer on the cut surface of the crystalline silicon substrate and forming a texture.
  • the areas are alternated.
  • a passivation film made of aluminum oxide is formed to about 15 to 50 nm by the plasma CVD method, and then a silicon nitride film is formed on the entire crystalline silicon substrate (main surface and back surface) by using silane gas and ammonia gas as an antireflection film by the plasma CVD method. ) (FIG. 1 (c). However, the antireflection film is not shown).
  • the aluminum paste was applied linearly with a thickness of 20 ⁇ m and a width of 70 ⁇ m to the p + layer forming opening using a screen printing machine so as to fill the opening, and the crystalline silicon substrate coated with the aluminum paste was applied. It was dried at 100 ° C. for 10 minutes (FIG. 1 (e)).
  • a known silver paste is printed with a printing width of 50 ⁇ m so that the distance from the center to the center in the width direction of the silver electrode is 1000 ⁇ m so as to correspond with the aluminum electrode and the comb teeth. It was printed and dried at 100 ° C. for 10 minutes (FIG. 1 (e)). Next, firing was performed in a belt furnace at a peak temperature of 900 ° C. (FIG. 1 (f)). By this firing, an aluminum electrode (including a p + layer) is formed, and a silver electrode is formed on the surface of the n + layer.
  • Example 1 Since the process of Example 1 is simple, the number of processes required in Comparative Example 1 can be significantly reduced, and a significant reduction in manufacturing cost can be achieved. Moreover, since the p + layer and the n + layer are not in contact with each other, the leakage current between the p + layer and the n + layer is significantly reduced. The time required to manufacture the back-contact type solar cell was 230 minutes.
  • Comparative Example 1 Similar to the prior art, the surface of the light receiving surface of the crystalline silicon substrate was texture-etched to form an uneven shape, a dielectric layer was formed so as to be in contact with the entire surface of the crystalline silicon substrate, and an insulating layer was further formed. At the same time, a back contact type solar cell was obtained by repeating patterning and etching in order to form an n + layer and a p + layer on the back surface of the crystalline silicon substrate. The specific procedure will be described in detail below.
  • a crystalline silicon substrate made of n-type single crystal silicon was prepared (substrate: 6 inches, thickness 200 ⁇ m).
  • the front and back surfaces of the prepared crystalline silicon substrate were wet-etched with a mixed solution of hydrofluoric acid and nitric acid for the purpose of removing the damaged layer on the cut surface of the prepared crystalline silicon substrate.
  • an emitter layer and a BSF layer were formed on the back surface side of the crystalline silicon substrate.
  • a pattern was formed so that the desired diffusion region was formed in a band shape in which the n-type diffusion region and the p-type diffusion region were alternately formed.
  • the width (A) of the n-type diffusion region is 2500 ⁇ m
  • the width (B) of the p-type diffusion region is 1000 ⁇ m
  • the space (C) between the n-type diffusion region and the p-type diffusion region is 250 ⁇ m, at the edge of the substrate.
  • the space (D) between the edge of the nearest diffusion layer and the edge of the substrate was 1000 ⁇ m.
  • heat treatment was performed at 900 to 1000 ° C. by vapor phase diffusion using BBr 3 to form a p-type diffusion region.
  • the glass component attached to the crystalline silicon substrate was cleaned and removed by glass etching or the like.
  • a passivation film made of silicon oxide was formed at about 15 to 50 nm by the plasma CVD method, and then a silicon nitride film was formed on the back surface of the crystalline silicon substrate by the plasma CVD method using silane gas and ammonia gas as an antireflection film. Then, the p-type diffusion region formed on the front side of the crystalline silicon substrate was removed by immersing it in a mixed solution of hydrofluoric acid and nitric acid.
  • an oxide film was formed on the back surface in addition to the desired n-type diffusion region by the same treatment.
  • An n-type diffusion region was formed on the back surface by performing a heat treatment at 900 to 1000 ° C. by vapor phase diffusion using POCl 3 . Further, for the purpose of removing the oxide film on the surface of the crystalline silicon substrate and forming a texture, the surface of the silicon substrate was wet-etched with an alkaline solution (potassium hydroxide).
  • heat treatment was performed at 900 to 1000 ° C. by vapor phase diffusion using POCl 3 to form an n-type diffusion region on the surface.
  • the glass components attached to the crystalline silicon substrate were similarly cleaned by glass etching. Then, a silicon nitride film was formed on the entire front and back surfaces of the crystalline silicon substrate by using silane gas and ammonia gas as the antireflection film by the plasma CVD method.
  • the SiNx contact portion on the back surface of the crystalline silicon substrate was patterned, and the aluminum electrode was formed by aluminum vapor deposition.
  • Ni, Cu, and Ag plating were performed so that they could be contacted with aluminum, and annealing treatment was performed.
  • the time required was 480 minutes due to the complicated process.
  • Crystallized silicon substrate 20 n + layer 30 Exposed part of crystalline silicon substrate (part where n + layer is not formed) 40 Passivation film 50 Exposed part of crystalline silicon substrate (part where the passivation film is removed) 60A Aluminum paste for forming aluminum electrode 60B Aluminum electrode 60C Aluminum-silicon alloy layer 60D BSF layer 70A Silver paste for forming silver electrode 70B Silver electrode 70 Aluminum electrode 72 Silver electrode 74 Silver electrode for aluminum bonding An type Width of diffusion region B Width of p-type diffusion region Space between Cn-type diffusion region and p-type diffusion region D Space between the end of the diffusion layer closest to the edge of the substrate and the edge of the substrate 1000 Ion injection device 1001, 1002 Vacuum chamber 1003 Insulation Member 1004 Stage 1005 Gas supply source 1010 Plasma 1100 RF introduction coil 1101 Permanent magnet 1102 RF introduction window 1200, 1201 Electrode 1300 DC power supply 1301 AC power supply S1 substrate

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Abstract

La présente invention concerne un procédé de fabrication d'une cellule solaire de type à contact arrière qui peut être mis en œuvre avec un plus petit nombre de processus que dans des procédés de fabrication classiques.　La présente invention concerne un procédé de fabrication d'une cellule solaire de type à contact arrière, le procédé comprenant dans l'ordre : une étape (A) consistant à former partiellement une couche n+ (20) par injection d'ions et recuit d'activation à l'aide d'un masque dur mécanique sur la surface arrière d'un substrat de silicium cristallin (10) ; une étape (B) consistant à former un film de passivation (40) sur les deux surfaces du substrat de silicium cristallin (10) comprenant la couche n+ (20) obtenue à l'étape (A) ; et une étape (C) consistant à retirer une partie ou la totalité de la région du film de passivation (40) formée sur le côté de surface arrière du substrat de silicium cristallin (10), qui recouvre directement le substrat de silicium cristallin (10), et à former une ou plusieurs électrodes en aluminium (60B) sur le substrat de silicium cristallin exposé (50).
PCT/JP2020/011062 2019-03-13 2020-03-13 Procédé de fabrication d'une cellule solaire de type à contact arrière WO2020184705A1 (fr)

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Application Number Priority Date Filing Date Title
CN202080020891.0A CN113597682A (zh) 2019-03-13 2020-03-13 背接触型太阳能电池单元的制造方法

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JP2019045735A JP7264673B2 (ja) 2019-03-13 2019-03-13 バックコンタクト型太陽電池セルの製造方法
JP2019-045735 2019-03-13

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WO2020184705A1 true WO2020184705A1 (fr) 2020-09-17

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