WO2020147589A1 - 一种新型led芯片封装制作方法 - Google Patents

一种新型led芯片封装制作方法 Download PDF

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WO2020147589A1
WO2020147589A1 PCT/CN2020/070052 CN2020070052W WO2020147589A1 WO 2020147589 A1 WO2020147589 A1 WO 2020147589A1 CN 2020070052 W CN2020070052 W CN 2020070052W WO 2020147589 A1 WO2020147589 A1 WO 2020147589A1
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chip
electrode
metal substrate
photoresist layer
substrate
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PCT/CN2020/070052
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English (en)
French (fr)
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WO2020147589A8 (zh
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申凤仪
王秀瑜
申广
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申广
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the invention relates to LED packaging technology, in particular to a new type of LED chip packaging manufacturing method.
  • LED chip packaging technology has three ways to connect chip electrodes and external pads: flip chip bonding, tape automatic bonding (TAB-Tape Automated Bonding) and wire bonding (Wire Bonding).
  • flip chip bonding tape automatic bonding (TAB-Tape Automated Bonding)
  • wire bonding Wire Bonding
  • the connection between the chip and the lead frame (support or substrate) provides a circuit connection for the distribution of power and signals.
  • flip-chip bonding has grown rapidly, more than 90% of the current connection methods are still wire bonding. This is mainly based on cost considerations.
  • flip-chip bonding can greatly improve the performance of the package, the excessively expensive cost makes flip-chip bonding only used for some high-end products.
  • Wire bonding is the process of connecting the pads on the chip and the lead frame (or substrate) with very small wires.
  • wire bonding technologies ball bonding and wedge bonding.
  • the basic steps include: forming a first solder joint (usually on the chip surface), forming a wire arc, and finally forming a second solder joint (usually on the lead frame/substrate).
  • the difference between the two types of bonding is that in ball bonding, a free air ball (FAB) is formed at the beginning of each bonding cycle, and then the ball is soldered to the pad to form the first solder joint; for wedge Soldering, the leads are directly soldered to the chip pads under pressure and ultrasonic energy.
  • FAB free air ball
  • the electrical connection between the chip and the outside is achieved by connecting the I/O on the chip to the package carrier by bonding with metal wires and through the package pins.
  • the wafer-level packaging technology uses thin film redistribution technology to enable I/O to be distributed on the entire surface of the IC chip instead of being limited to the peripheral area of the narrow IC chip, thus solving the problem of high-density, fine-pitch I/O O chip electrical connection problem.
  • the wafer-level packaging technology is the most innovative and attracting the most attention of the world, and is a sign of a revolutionary breakthrough in packaging technology.
  • the wafer-level packaging technology uses wafers as the processing object, encapsulating, aging, and testing many chips on the wafer at the same time, and finally cutting into individual devices. It reduces the package size to the size of the IC chip, and the production cost is greatly reduced.
  • the advantages of wafer-level packaging technology make it attract great attention as soon as it appears, and it quickly obtains huge development and wide application. In portable products such as mobile phones, wafer-level packaged EPROM, IPD (integrated passive devices), analog chips and other devices have been widely used.
  • Wafer-level packaging mainly adopts two basic technologies, thin film redistribution technology and bump formation.
  • the former is used to convert the soldering areas distributed along the periphery of the chip into bump soldering areas distributed in a planar array on the chip surface.
  • the latter is used to make bumps on the bump pads to form an array of solder balls.
  • the final solder bumps are formed in an area array layout.
  • BCB is used as the redistributed dielectric layer
  • Cu is used as the redistribution connection metal
  • UBM under-bump metal layer
  • LED packaging connects the external circuit leads to the electrodes of the LED chip to facilitate connection with other devices. It not only connects the electrodes on the chip to the package shell with wires to connect the chip to the external circuit, but also fixes and seals the chip to protect the chip circuit from corrosion by water, air and other substances and reduce electrical performance. According to different application needs, LED chips can be made into devices with different structures and appearances through different packaging methods. According to whether the packaged product has pins or not, LEDs can be divided into two types: pin package and surface mount package. According to the type of chip used in the package, it can be divided into two major categories: formal chip packaging and flip chip packaging.
  • LED front-mounted chips to cooperate with the bracket, and the use of dispensing, bonding, wire bonding, sealing and other formal chip packaging technologies.
  • flip-chip LED chips with substrates (PCB, FPC, printed circuit ceramic substrates, glass substrates, etc.) through flip-chip packaging technologies such as die bonding, solder paste reflow soldering, and sealing.
  • the LED packaging technology that adopts the formal chip is the mainstream technology in the LED packaging industry.
  • This packaging technology requires wire bonding (gold wire, silver wire or alloy wire, etc.), packaging brackets and other raw materials, and the production equipment requires a die-bonding machine and a wire bonding machine. Etc., due to the relatively high price of LED die-bonding machines and wire bonding machines, the depreciation cost of the equipment is high.
  • the sapphire surface mount bonding substrate of the LED chip is used for the formal chip. Due to the low thermal conductivity of the sapphire substrate of the LED chip, the chip The heat dissipation performance is poor.
  • Flip-chip LED packaging technology uses PCB, FPC, printed circuit ceramic substrates, glass substrates, etc. as substrates, and prints the necessary connection lines on the substrates and solder joints for flip-chip LED chips.
  • Paste the flip-chip LED chip on the etched circuit board connect the electrode of the chip with the external circuit by over-eutectic soldering or reflow soldering, and then seal the glue and coat the phosphor to heat and cure to make the finished product.
  • the advantage is that it can save investment in wire bonding equipment.
  • the P/N electrode surface of the LED chip is connected to the substrate circuit through solder paste or eutectic solder, the chip heat dissipation is better.
  • the disadvantage is that the price of flip chip is higher than that of formal chip 15 % Or more, and for chips below 10*30mil, due to the small chip size, solder paste soldering may easily cause soldering short-circuits between the P/N electrodes of the chip.
  • the purpose of the present invention is to provide a new type of LED chip packaging manufacturing method. Redistribute the chips into array chips, fabricate a transitional isolation photoresist layer (or other photosensitive materials) on the electrode surface of the array chip, use metal as a substrate or fabricate a metal layer on the transition isolation photoresist layer of the array chip away from the array chip surface As the substrate, through the metal substrate corresponding to the chip electrode area lithography, etching to make through holes, and through the substrate through holes to expose and develop the transition isolation photoresist layer (or other photosensitive materials) on the array chip, and then use solder paste, conductive paste Welding technology such as sputtering, evaporation coating, chemical coating, etc., electrode welding and packaging of the chips distributed in the array to make packaged devices with circuit structure, which can make all kinds of LED lighting devices, modules, LED displays, especially small Pitch display, Mini LED, Micro LED display panel or module.
  • packaging and chip manufacturing will change the separation of chip manufacturing and chip packaging industry.
  • This new type of packaging technology does not require traditional packaging die-bonding machines, wire bonding machines, brackets, bonding wires (gold wire, silver wire, alloy wire) and other equipment and materials. While improving product performance, it adopts chip array production. Improve production efficiency and greatly reduce production costs.
  • the present invention provides a new type of LED chip packaging manufacturing method, which redistributes the LED chips into array chips, forms a metal substrate, a transitional isolation photoresist layer, and an array chip sandwich structure, which is isolated from the transition.
  • the photoresist layer is processed to form a welding channel between the electrode area of the array chip and the metal substrate, and the I/O welding between the electrode of the array chip and the metal substrate is realized through the welding channel.
  • the chips are first redistributed and fabricated into array chips, and then the electrode surfaces of the array chips are in contact with the transitional isolation photoresist layer, and the LED chip electrodes are corresponded through the metal substrate.
  • the array chip includes a first chip surface and a second chip surface that are opposed to each other, and the electrode area of the array chip includes a P electrode and an N electrode.
  • the electrode and the N electrode are on the first chip surface, and the P electrode and the N electrode are separated by an insulating region.
  • the metal substrate includes a first substrate surface and a second substrate surface that are arranged oppositely.
  • At least one LED chip is fixed on the transparent plastic film by a sorting machine or a die-bonding machine to make an array chip, wherein the first chip surface of the LED chip is arranged on the side away from the transparent plastic film;
  • a through hole is formed on the metal substrate, and a through hole is made in the corresponding position of the electrode area of each LED chip;
  • metal etching is performed on the second substrate surface of the metal substrate to form the insulating channels and circuit connections of each chip, so as to produce a module or panel with a certain circuit structure.
  • the step 2 forming a through hole on the metal substrate specifically includes the following steps:
  • the PAD mask has a transparent area and a non-transparent area, the transparent area corresponds to the electrode area of the LED chip on the array chip, and other positions are non-transparent areas.
  • PAD separation mask grating specifically:
  • a transparent board cover the array chip on the surface A of the transparent board, and paste a shield on the surface B of the first transparent board.
  • the shield cannot cover the corresponding position of the electrode area on the array chip.
  • the insulating area between the P electrode and the N electrode of a row of chips is continuously and uninterrupted to cover the last row of chips in this row of chips, spray or brush opaque paint on the B surface of the first transparent board, and then tear off the shield to form a PAD separation Mask grating.
  • the production of the PAD mask includes the following steps:
  • a quartz glass plate is taken, a metal coating is made on one side, and a negative photoresist is applied to the metal coating to cover the array chip
  • a metal coating is made on one side
  • a negative photoresist is applied to the metal coating to cover the array chip
  • carry out exposure and development place the light-transmitting strip of the PAD separation mask grating between the positive and negative electrodes of the chip, align and position, then carry out exposure and development, and put the developed quartz plate in the etching solution.
  • the metal layer in the development area of the chip's PAD electrode is removed, and the PAD mask is completed.
  • the metal substrate is formed by evaporation or sputtering.
  • a transition isolation photoresist layer is prefabricated on the electrode area of the array chip, and then the transition The side of the isolation photoresist layer away from the array chip is plated with a metal film to form a metal substrate.
  • the array chip includes a first chip surface and a second chip surface that are opposed to each other, and the electrode area of the array chip includes a P electrode or an N electrode. The electrode and the N electrode are not on the same side.
  • the manufacturing method includes the following steps:
  • a metal substrate form a transitional isolation photoresist layer on the surface of the first substrate of the metal substrate, contact the first chip surface of the array chip with the transition isolation photoresist layer, and form a through hole on the metal substrate.
  • the position of the through hole is The P electrode or N electrode distributed on the first chip surface corresponds to the welding, through the metal substrate through hole, corresponding to the welding of the metal substrate and the LED chip electrode area; then select a metal substrate and form a transitional isolation light on the surface of the first substrate of the metal substrate
  • the resist layer contacts the second chip surface of the array chip with the transition isolation photoresist layer, and forms a through hole on the metal substrate.
  • the position of the through hole corresponds to the P electrode or N electrode distributed on the second chip surface.
  • Metal substrate through holes corresponding to welding the metal substrate and the electrode area of the LED chip, remove the transition isolation photoresist layer between the metal substrate and the array chip, etch the metal substrate on both sides of the array chip, produce different circuit structures, and encapsulate it , Made into a certain circuit structure module or panel.
  • the array chip includes a first chip surface and a second chip surface that are opposed to each other, and the electrode area of the array chip includes a P electrode or an N electrode.
  • the electrode and the N electrode are not on the same surface.
  • the manufacturing method includes the following steps: fabricate a transitional isolation photoresist layer on the first chip surface of the array chip, and use a PAD mask to expose and develop the transition isolation photoresist layer to expose the array chip
  • the metal surface of the region corresponding to the electrode area is then evaporated or sputtered on the surface of the transition isolation photoresist layer, so that the soldering material fills the through holes and the entire transition isolation photoresist layer surface, forming the metal substrate of the array chip, alloy processing
  • the solder is connected to the metal of the chip electrode; then a transition isolation photoresist layer is fabricated on the second chip surface of the above-mentioned array chip, and the transition isolation photoresist layer is exposed and developed using a PAD mask to expose the corresponding electrode area of the array chip
  • the metal surface of the region is then evaporated or sputtered on the surface of the transition isolation photoresist layer, so that the solder material fills the through holes and the entire transition isolation photoresist layer surface,
  • the step of fabricating a transitional isolation photoresist layer on the first chip surface or the second chip surface of the array chip specifically includes:
  • the pyrolytic adhesive plate is heated to debond the pyrolytic adhesive on the contact surface with the transitional isolation photoresist layer, and the pyrolytic adhesive plate is peeled off.
  • This method is suitable for all kinds of normal-mounted chips, flip-chips, thin-film chips or vertical structure LED chips commonly used in the market, saving investment in equipment such as die-bonding machines, wire bonding machines or eutectic bonding machines, and adopts ordinary metal substrates or direct preparation
  • the substrate is generated, and raw materials such as brackets, gold wires or alloy wires are omitted, and the cost of packaging materials is reduced.
  • the electrode surface of the chip and the substrate form a welding path, which improves the heat conduction and heat dissipation performance of the chip.
  • the conductive circuit of the device or module is directly fabricated, and array-type finished lighting and display packaging devices or modules of various specifications and sizes are manufactured at one time.
  • FIG. 1 Schematic diagram of the structure of the present invention
  • FIG. 1 Schematic diagram of array chip placement
  • FIG. 1 Schematic diagram of the substrate after coating photoresist
  • FIG. 4 Schematic diagram of PAD separation mask grating
  • FIG. 1 Schematic diagram of PAD mask
  • PAD separation mask grating 10 The surface of the first substrate 11, the surface of the second substrate 12, the PAD mask.
  • Substrate (copper material) cleaning select metal substrate 4, clean it with acetic acid solution to remove surface contaminants and oxide layers, or use other acid or alkali solutions for treatment;
  • Transition isolation photoresist layer coating coating (spin coating or spraying) positive photoresist 8 on the surface of the first substrate of the metal substrate 4 to form a transition isolation photoresist layer 7;
  • Chip redistribution Use a sorting machine (or die-bonding machine) to redistribute single or multiple LED chips 1 (the P electrode and N electrode of the chip are on the same side) on the transparent film, the first chip of the LED chip The surface is arranged on the side away from the transparent adhesive film to form an array chip;
  • PAD separation mask grating production take a transparent plate (quartz glass plate, plastic plate or other materials), cover the array chip on the transparent plate, on the other side of the transparent plate along the chip P electrode of each row of the array chip 2. Paste an opaque adhesive strip (or other lines or strips) between the N electrodes 3 of the chip. The width of the adhesive strip is at least 3 microns, and the widest is the distance between the two electrodes. Spray or brush the adhesive tape on the transparent board. Apply opaque paint, tear off the adhesive strip after the paint dries, and prepare the PAD separation mask grating 9;
  • PAD mask production take a quartz glass plate, make a metal coating on one side, apply a negative photoresist on the metal coating, cover the array chip on the metal coating, and use the shading of the chips on the display chip Characteristics, exposure, remove the array chip, place the PAD separation mask grating to make the light-transmitting strip between the chip P electrode 2 and the chip N electrode 3. After alignment and positioning, perform exposure and development, and place the developed quartz plate Put the etching solution into the etching solution to remove the metal layer in the development area of the chip's PAD electrode to complete the PAD mask 12;
  • the entire array chip is attached to the transition isolation photoresist layer 7, and the first chip surface of the LED chip is in contact with the transition isolation photoresist layer;
  • step 12 Place the finished product in step 12 into the etching solution to etch the exposed area of the second substrate surface 11 to etch through holes;
  • step 13 Expose the finished product etched in step 13 from the second substrate surface 11, and at the same time expose the chip P electrode 2 of the LED chip 2 and the photoresist corresponding to the chip N electrode 3 through the etched through hole;
  • Alloy processing solder is connected to the metal of the substrate and chip electrode
  • step 21 Place the finished product of step 20 in the glue remover, and remove the photoresist on the first substrate surface 10 and the second substrate surface 11;
  • step 24 the surface 10 of the first substrate of the finished product is filled with packaging glue and the chip is packaged;
  • the metal substrate is etched to make a module or panel with a certain circuit structure.
  • Chip redistribution Use a sorting machine (or die-bonding machine) to redistribute a single or multiple LED chips 1 (the P electrode and N electrode of the chip are on the same side) on the transparent film, the first chip of the LED chip The surface is arranged on the side away from the transparent adhesive film to form an array chip;
  • One surface of the single-sided pyrolysis adhesive board (flat surface, metal or non-metal material) is coated with pyrolysis glue, and then photoresist is coated on the pyrolysis glue surface to make a transitional isolation photoresist layer 7;
  • PAD separation mask grating production take a transparent plate (quartz glass plate, plastic plate or other materials), cover the array chip on the transparent plate, on the other side of the transparent plate along the chip P electrode of each row of the array chip 2. Paste an opaque adhesive strip (or other lines or strips) between the N electrodes 3 of the chip. The width of the adhesive strip is at least 3 microns, and the widest is the distance between the two electrodes. The insulating area between the P electrode and the N electrode of the row chip is continuously and uninterrupted to cover the last row of the chips in the row. Spray or brush the opaque paint on the side of the transparent board where the adhesive strips are pasted. After the paint dries, tear off the adhesive strips, and the preparation is complete PAD separation mask grating 9;
  • PAD mask production take a quartz glass plate, make a metal coating on one side, apply a negative photoresist on the metal coating, cover the array chip on the photoresist layer of the metal coating, and use the display Expose the light-shielding characteristics of the chip on the chip, remove the array chip, place the PAD separation mask grating to make the light-transmitting strip between the chip P electrode 2 and the chip N electrode 3. After alignment and positioning, perform exposure and development. After the development, the quartz plate is put into the etching solution to remove the metal layer in the development area of the chip's PAD electrode, and the PAD mask 12 is completed;
  • the entire array chip is attached to the transition isolation photoresist layer 7 made in step 2, and the first chip surface of the LED chip is in contact with the transition isolation photoresist layer;
  • step 14 Place the finished product of step 14 in the glue remover to remove the photoresist on the first substrate surface 10 and the second substrate surface 11;
  • step 15 the surface 10 of the first substrate of the finished product is filled with encapsulant and the chip is packaged;
  • Chip redistribution use a sorting machine (or die-bonding machine) to redistribute single or multiple LED chips 1 (the P electrode and N electrode of the chip are not on the same side) on the transparent film, the first chip of the LED chip The surface is arranged on the side away from the transparent adhesive film to form an array chip;
  • a sorting machine or die-bonding machine
  • PAD mask production take a quartz glass plate, make a metal coating on one side, coat the metal coating with a negative photoresist, and cover the array chip on the surface of the photoresist on the metal coating, using Display the shading characteristics of the chip on the chip, perform exposure, remove the array chip, develop the quartz glass plate, put the developed quartz glass plate into the etching solution, remove the metal layer of the chip's PAD electrode development area, and complete the PAD mask. 12;
  • Substrate (copper material) cleaning select metal substrate 4 and clean it with acetic acid solution to remove surface contaminants and oxide layers. Other acid or alkali solutions can also be used for treatment;
  • Transition isolation photoresist layer coating coating (spin coating or spraying) positive photoresist on the surface of the first substrate of the metal substrate 4 to form a transition isolation photoresist layer 7;
  • step (1) The entire array chip manufactured in step (1) is attached to the metal substrate 4, and the first chip surface of the array chip is in contact with the transition isolation photoresist 7 on the metal substrate 4;
  • Alloy processing solder is connected to the metal of the substrate and chip electrode
  • Transition isolation photoresist layer coating coating (spin coating or spraying) positive photoresist on the first substrate surface 10 of the metal substrate 4'to form a transition isolation photoresist layer 7';
  • step (16) The entire array chip manufactured in step (16) is attached to the metal substrate 4', and the second chip surface of the array chip is in contact with the transition isolation photoresist 7'on the metal substrate 4';
  • the metal substrate is etched to produce a module or panel with a certain circuit structure.
  • Chip redistribution use a sorting machine (or die-bonding machine) to redistribute single or multiple LED chips 1 (the P electrode and N electrode of the chip are not on the same side) on the transparent film, the first chip of the LED chip The surface is arranged on the side away from the transparent adhesive film to form an array chip;
  • a sorting machine or die-bonding machine
  • One surface of the single-sided pyrolysis adhesive board (flat surface, metal or non-metal material) is coated with pyrolysis glue, and then photoresist is coated on the pyrolysis glue surface to make a transitional isolation photoresist layer 7;
  • PAD mask production take a quartz glass plate, make a metal coating on one side, apply a negative photoresist on the metal coating, cover the array chip on the metal coating, and use the shading of the chips on the display chip Characteristics, exposure, remove the array chip, put the developed quartz plate into the etching solution to remove the metal layer of the chip's PAD electrode development area, and complete the PAD mask 12;
  • the entire array chip is attached to the transition isolation photoresist layer 7 made in step 2, and the first chip surface of the LED chip is in contact with the transition isolation photoresist layer;
  • step (10) Attach the array chip produced in step (10) as a whole to a second single-sided pyrolytic adhesive plate, and the second chip surface of the array chip is in contact with the transitional isolation photoresist on the second pyrolytic adhesive plate;

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Abstract

本发明提供一种新型LED芯片封装制作方法，将芯片再分布制作成阵列芯片、在阵列芯片电极面制作过渡隔离光刻胶层(或其他感光材料)，采用金属作为基板或在远离阵列芯片过渡隔离光刻胶层面上制作金属层作为基板，通过金属基板对应芯片电极区域光刻，蚀刻制作通孔，通过基板通孔曝光、显影阵列芯片上的过渡隔离光刻胶层(或其他感光材料)，然后采用锡膏、导电浆料或者溅射、蒸发镀膜、化学镀膜等焊接技术，对阵列分布的芯片进行电极焊接和封装，制作成带电路结构的封装器件，可以制作各类LED照明器件、模组、LED显示尤其是小间距显示屏、Mini LED、Micro LED显示面板或模组。

Description

一种新型LED芯片封装制作方法 技术领域
本发明涉及LED封装技术，尤其涉及一种新型LED芯片封装制作方法。
背景技术
LED芯片封装技术有三种方式实现芯片电极与外部焊盘连接：倒装焊(Flip Chip Bonding)、载带自动焊(TAB－Tape Automated Bonding)和引线键合(Wire Bonding)。LED芯片封装中，芯片和引线框架(支架或基板)的连接为电源和信号的分配提供了电路连接。虽然倒装焊的应用增长很快，但是目前90％以上的连接方式仍是引线键合。这个主要是基于成本的考虑。虽然倒装焊能大幅度提升封装的性能，但是过于昂贵的成本使得倒装焊仅仅用于一些高端的产品上。
引线键合就是用非常细小的线把芯片上焊盘和引线框架(或者基板)连接起来的过程。有两种引线键合技术：球形焊接(ball bonding)和楔形焊接(wedge bonding)。对这两种引线键合技术，基本的步骤包括：形成第一焊点(通常在芯片表面)，形成线弧，最后形成第二焊点(通常在引线框架/基板上)。两种键合的不同之处在于：球形焊接中在每次焊接循环的开始会形成一个焊球(Free Air Ball，FAB)，然后把这个球焊接到焊盘上形成第一焊点；对于楔形焊接，引线在压力和超声能量下直接焊接到芯片的焊盘上。
芯片与外部的电气连接是用金属引线以键合的方式把芯片上的I/O连至封装载体并经封装引脚来实现。随着IC芯片特征尺寸的缩小和集成规模的扩大，I/O的间距不断减小、数量不断增多。当I/O间距缩小到70um以下时，引线键合技术就不再适用，必须寻求新的技术途径。晶元级封装技术利用薄膜再分布上艺，使I/O可以分布在IC芯片的整个表面上而不再仅仅局限于窄小的IC 芯片的周边区域，从而解决了高密度、细间距I/O芯片的电气连接问题。晶元级封装技术最具创新性、最受世人瞩目，是封装技术取得革命性突破的标志。晶元级封装技术以晶元为加工对象，在晶元上同时对众多芯片进行封装、老化、测试，最后切割成单个器件。它使封装尺寸减小至IC芯片的尺寸，生产成本大幅度下降。晶元级封装技术的优势使其一出现就受到极大的关注并迅速获得巨大的发展和广泛的应用。在移动电话等便携式产品中，已普遍采用晶元级封装型的EPROM、IPD(集成无源器件)、模拟芯片等器件。采用晶元级封装的器件门类正在不断增多，晶元级封装技术是一项正在迅速发展的新技术。晶元级封装主要采用薄膜再分布技术、凸点形成两大基础技术。前者用于把沿芯片周边分布的焊接区域转换为在芯片表面上按平面阵列形式分布的凸点焊区。后者则用于在凸点焊区上制作凸点，形成焊球阵列。最终形成的焊料凸点呈面阵列布局，该工艺中，采用BCB作为再分布的介质层，Cu作为再分布连线金属，采用溅射法淀积凸点底部金属层(UBM)，丝网印刷法淀积焊膏并回流焊接。
LED指示、照明、显示屏市场容量高速增长，LED封装是将外部电路引线连接到LED芯片的电极上，以便于与其他器件连接。它不仅将用导线将芯片上的电极连接到封装外壳上实现芯片与外部电路的连接，而且将芯片固定和密封起来，以保护芯片电路不受水、空气等物质的侵蚀而造成电气性能降低。根据不同的应用需要，LED的芯片可通过不同封装方式做成不同结构和外观的器件，按封装成品是否带有引脚，LED可分为引脚式封装和表面贴装封装两种类型。按照封装采用的芯片类型可分为正装芯片封装和倒装芯片封装两个大类，一类是采用LED正装芯片配合支架，采用点胶、固晶、焊线、封胶等正装芯片封装技术，一类是采用倒装LED芯片配合基板(PCB、FPC、印制电路的陶瓷基板、玻璃基板等)，通过固晶、锡膏回流焊、封胶等的倒装芯片封装技术。
采用正装芯片的LED封装技术是目前LED封装行业的主流技术，这种封装技术需要焊线(金线、银线或合金线等)、封装支架等原材料，生产设备需要固晶机、焊线机等，由于LED固晶机、焊线机的价格比较昂贵，造成设备折旧成本较高，正装芯片采用LED芯片的蓝宝石面贴装结合基板，由于LED芯片的蓝宝石衬底的低导热系数，致使芯片散热性能较差。
倒装芯片LED封装技术，以PCB、FPC、印制电路的陶瓷基板、玻璃基板等为基板，在基板上印刷需要的连接线路和焊接倒装LED芯片的焊接点。在蚀刻好电路的基板上粘贴倒装LED芯片，过共晶焊或回流焊将芯片的电极与外部电路焊接连接，然后进行封胶、涂覆荧光粉加温固化制成成品。优点是可以节省打线机设备投资，同时由于LED芯片的P/N电极面通过锡膏或共晶焊料与基板电路连接导通，芯片散热较好，缺点是倒装芯片价格高于正装芯片15％以上，另外对于10*30mil以下芯片由于芯片尺寸太小，在进行锡膏焊接时，容易造成芯片P/N电极间焊接短路。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种新型LED芯片封装制作方法。将芯片再分布制作成阵列芯片、在阵列芯片电极面制作过渡隔离光刻胶层(或其他感光材料)，采用金属作为基板或在阵列芯片过渡隔离光刻胶层远离阵列芯片面上制作金属层作为基板，通过金属基板对应芯片电极区域光刻，蚀刻制作通孔，以及通过基板通孔曝光、显影阵列芯片上的过渡隔离光刻胶层(或其他感光材料)，然后采用锡膏、导电浆料或者溅射、蒸发镀膜、化学镀膜等焊接技术，对阵列分布的芯片进行电极焊接和封装，制作成带电路结构的封装器件，可以制作各类LED照明器件、模组、LED显示尤其是小间距显示屏、Mini LED、Micro LED显示面板或模组。把封装与芯片的制造融为一 体，改变芯片制造业与芯片封装业分离的局面。这种新型封装技术不需要传统封装的固晶机、焊线机以及支架、焊接线(金线、银线、合金线)等设备和物料，在产品性能提升的同时，采用芯片阵列式制作，提升生产效率，生产成本大幅降低。
为实现上述目的及其他相关目的，本发明提供一种新型LED芯片封装制作方法，将LED芯片再分布制作成阵列芯片，形成金属基板、过渡隔离光刻胶层、阵列芯片三明治结构，对过渡隔离光刻胶层进行处理，形成阵列芯片的电极区同金属基板的焊接通道，通过焊接通道实现阵列芯片的电极与金属基板的I/O焊接。
作为本发明所述的新型LED芯片封装制作方法的一种优选方案，首先将芯片再分布制作成阵列芯片，然后将阵列芯片电极面与过渡隔离光刻胶层接触，通过金属基板对应LED芯片电极区域光刻，蚀刻制作通孔，通过基板通孔曝光、显影阵列芯片上的过渡隔离光刻胶层，然后采用焊接技术，对阵列芯片的芯片进行电极焊接和封装，制作带电路结构的封装器件。
作为本发明所述的新型LED芯片封装制作方法的一种优选方案，所述的阵列芯片包括相对设置的第一芯片面和第二芯片面，阵列芯片的电极区包括P电极和N电极，P电极和N电极处于第一芯片面，P电极和N电极之间由绝缘区隔开，金属基板包括相对设置的第一基板表面和第二基板表面，制作方法包括以下步骤：
1)由分选机或固晶机将至少一个LED芯片固定在透明胶膜上制作成阵列芯片，其中LED芯片的第一芯片面设置在远离透明胶膜的一侧；
2)在金属基板上形成通孔，每个LED芯片的电极区对应位置制作一个通孔；
3)形成通孔的金属基板的第一基板表面涂敷光刻胶或感光材料制作过渡隔离光刻胶层；
4)将透明胶膜上的阵列芯片转移固定到涂有过渡隔离光刻胶层的金属 基板第一基板表面上，去除透明胶膜；
5)从金属基板的第二基板表面射入光，对金属基本第一基板面和陈列芯片第一芯片面之间的过渡隔离光刻胶层进行曝光、显影；
6)焊接，通过金属基板通孔，对应焊接金属基板与LED芯片电极区；
7)去胶，将金属基板第一基板面和阵列芯片第一芯片面之间的光刻胶去除；
8)合金，将焊接后的金属基板和芯片电极进行合金处理；
9)灌胶、封装阵列芯片；
10)按照需要的电路设计，在金属基板第二基板面进行金属蚀刻形成每个芯片的绝缘通道和电路连接，制作成一定电路结构的模组或面板。
作为本发明所述的新型LED芯片封装制作方法的一种优选方案，所述的步骤2在金属基板上形成通孔具体包括以下步骤：
2-1)在金属基板至少一面涂光刻正胶；
2-2)将PAD掩膜板覆盖在涂有光刻正胶的一面上；
2-3)曝光、显影、蚀刻，形成通孔，然后去胶；
其中，PAD掩膜板上具有透明区和非透明区，透明区与阵列芯片上LED芯片的电极区对应，其他位置为非透明区。
进一步地，还包括PAD分隔掩膜光栅制作步骤，具体为：
选取一透明板，将阵列芯片覆盖到该透明板A面上，在第一透明板B面粘贴遮挡物，遮挡物不能覆盖阵列芯片上电极区对应的位置，遮挡物需要从每列芯片的第一行芯片P电极和N电极之间的绝缘区域连续不间断的遮盖到这列芯片的最后一行芯片，向第一透明板B面喷涂或刷涂不透明涂料，然后撕除遮挡物，形成PAD分隔掩膜光栅。
所述的PAD掩膜板制作包括以下步骤：
作为本发明所述的新型LED芯片封装制作方法的一种优选方案，所述的取一块石英玻璃板，单面制作金属涂层，在金属涂层上涂敷光刻负胶，阵列芯片 覆盖到金属涂层上，进行曝光、显影，将PAD分隔掩膜光栅的透光条置于芯片正负电极中间，对准定位后，再进行曝光、显影，将显影后石英板放入蚀刻溶液中将芯片PAD电极显影区域的金属层去除，制作完成PAD掩膜板。
作为本发明所述的新型LED芯片封装制作方法的一种优选方案，所述的金属基板由蒸发或者溅射镀膜形成，首先在阵列芯片的电极区面预制过渡隔离光刻胶层，然后在过渡隔离光刻胶层远离阵列芯片的一面镀金属膜形成金属基板。作为本发明所述的新型LED芯片封装制作方法的一种优选方案，所述的阵列芯片包括相对设置的第一芯片面和第二芯片面，阵列芯片的电极区包括P电极或N电极，P电极和N电极不在同一面，制作方法包括以下步骤：
选取金属基板，在金属基板的第一基板表面形成过渡隔离光刻胶层，将阵列芯片的第一芯片面与过渡隔离光刻胶层接触，在金属基板上形成通孔，通孔的位置与第一芯片面分布的P电极或N电极对应，焊接，通过金属基板通孔，对应焊接金属基板与LED芯片电极区；再选取一块金属基板，并在金属基板的第一基板表面形成过渡隔离光刻胶层，将阵列芯片的第二芯片面与过渡隔离光刻胶层接触，在金属基板上形成通孔，通孔的位置与第二芯片面分布的P电极或N电极对应，焊接，通过金属基板通孔，对应焊接该金属基板与LED芯片电极区，去除金属基板与阵列芯片之间的过渡隔离光刻胶层，蚀刻阵列芯片两侧的金属基板，制作出不同电路结构，灌胶封装，制作成一定电路结构的模组或面板。
作为本发明所述的新型LED芯片封装制作方法的一种优选方案，所述的阵列芯片包括相对设置的第一芯片面和第二芯片面，阵列芯片的电极区包括P电极或N电极，P电极和N电极不在同一面，制作方法包括以下步骤：在阵列芯片的第一芯片面制作过渡隔离光刻胶层，使用PAD掩膜板对过渡隔离光刻胶层曝光，显影，裸露出阵列芯片的电极区对应的区域的金属表面，然后在过渡隔离光刻胶层表面蒸发或溅射镀膜，使得焊接材料填充通孔以及整个过渡隔离光刻胶层表面，形成阵列芯片的金属基板，合金处理焊料与芯片电极的金属连接； 然后在上述阵列芯片的第二芯片面制作过渡隔离光刻胶层，使用PAD掩膜板对过渡隔离光刻胶层曝光，显影，裸露出阵列芯片的电极区对应的区域的金属表面，然后在过渡隔离光刻胶层表面蒸发或溅射镀膜，使得焊接材料填充通孔以及整个过渡隔离光刻胶层表面，形成阵列芯片的金属基板，合金处理焊料与阵列芯片的芯片电极的金属连接，去除基板与阵列芯片件的过渡隔离光刻胶层，蚀刻阵列芯片两侧的金属基板，制作不同电路结构，灌胶封装，按照需要的电路设计蚀刻金属基板，制作成一定电路结构的模组或面板。
进一步地，在阵列芯片的第一芯片面或第二芯片面制作过渡隔离光刻胶层的步骤，具体为，
在单面热解胶板的热胶面制作过渡隔离光刻胶层，将阵列芯片贴覆到过渡隔离光刻胶层上，阵列芯片的第一芯片面或第二芯片面同过渡隔离光刻胶层接触，加热热解胶板，使得与过渡隔离光刻胶层接触面上的热解胶去粘，剥离热解胶板。
有益效果：
这种方法适用市场通用的各类正装芯片、倒装芯片、薄膜芯片或垂直结构LED芯片，节省了固晶机、焊线机或共晶焊接机等设备投资，采用普通的金属基板或直接制备生成基板，省掉了支架、金线或合金线等原材料，降低封装材料成本。芯片电极面与基板形成焊接通路，提高了芯片的导热散热性能，直接制作完成器件或模组的导电电路，一次性制作各种规格尺寸的阵列型成品照明、显示封装器件或模组，在产品性能提升的同时，提升生产效率，生产成本大幅降低，解决了现有倒装芯片封装焊接过程中侧壁爬锡漏电问题、密集排布封装焊接短路、小尺寸正装芯片P、N电极间距焊接短路问题。
附图说明
图1本发明的结构示意图；
图2阵列芯片摆放示意图；
图3涂敷光刻胶后的基板示意图；
图4PAD分隔掩膜光栅示意图；
图5PAD掩膜板示意图；
1、LED芯片 2、芯片P电极、3、芯片N电极 4、金属基板 5、焊接材料 6、透明胶膜 7、过渡隔离光刻胶层 8、光刻正胶 9、PAD分隔掩膜光栅 10、第一基板表面 11、第二基板表面 12、PAD掩膜板。
具体实施方式
以下由特定的具体实施例说明本发明的实施方式，熟悉此技术的人士可由本说明书所揭露的内容轻易地了解本发明的其他优点及功效。
须知，本说明书所附图式所绘示的结构、比例、大小等，均仅用以配合说明书所揭示的内容，以供熟悉此技术的人士了解与阅读，并非用以限定本发明可实施的限定条件，故不具技术上的实质意义，任何结构的修饰、比例关系的改变或大小的调整，在不影响本发明所能产生的功效及所能达成的目的下，均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时，本说明书中所引用的如“上”、“下”、“左”、“右”、“中间”及“一”等的用语，亦仅为便于叙述的明了，而非用以限定本发明可实施的范围，其相对关系的改变或调整，在无实质变更技术内容下，当亦视为本发明可实施的范畴。
实施例1
1.基板(铜材质)清洗：选取金属基板4，使用醋酸溶液清洗干净，去除表面污染物和氧化层，也可以使用其他酸或碱溶液进行处理；
2.过渡隔离光刻胶层涂敷：在金属基板4的第一基板表面涂(旋涂或喷涂)光刻正胶8，形成过渡隔离光刻胶层7；
3.芯片再分布：使用分选机(或固晶机)将单颗或多颗LED芯片1(芯片P电极和N电极在同侧)再分布到透明胶膜上，LED芯片的第一芯片面设置在远离透明胶膜的一侧，形成阵列芯片；
4.PAD分隔掩膜光栅制作：取一块透明板(石英玻璃板、塑料板或其他材质)，将阵列芯片覆盖到透明板上，在透明板另外一面沿着阵列芯片每列芯片的芯片P 电极2、芯片N电极3之间粘贴一条不透明的胶条(或其他线、条)，胶条宽最小3微米，最宽为两个电极之间的距离，在透明板粘贴胶条一面喷涂或刷涂不透明涂料，涂料干燥后撕掉胶条，制备完成PAD分隔掩膜光栅9；
5.PAD掩膜板制作：取一块石英玻璃板，单面制作金属涂层，在金属涂层上涂敷光刻负胶，将阵列芯片覆盖到金属涂层上，利用陈列芯片上芯片的遮光特性，进行曝光，取下阵列芯片，将PAD分隔掩膜光栅制作透光条置于芯片P电极2、芯片N电极3中间，对准定位后，再进行曝光、显影，将显影后石英板放入蚀刻溶液中将芯片PAD电极显影区域的金属层去除，制作完成PAD掩膜板12；
6.将阵列芯片整体贴敷到过渡隔离光刻胶层7上，LED芯片的第一芯片面同过渡隔离光刻胶层接触；
7.对放置好LED芯片的金属基板的过渡隔离光刻胶层进行坚膜，然后撕掉阵列芯片上的透明胶膜；
8.在金属基板4的第二基板表面11涂光刻正胶8；
9.在金属基板4的第二基板表面11光刻胶坚膜；
10.将PAD掩膜板12在第二基板表面11对位贴紧；
11.利用PAD掩膜板12对第二基板表面11光刻胶进行曝光；
12.显影去胶，裸露出金属基板对应区域的金属；
13.将步骤12完成品整体放置入蚀刻溶液中，腐蚀第二基板表面11裸露区域，蚀刻出通孔；
14.将步骤13蚀刻后的完成品，从第二基板表面11进行曝光，同时利用蚀刻出的通孔曝光LED芯片的芯片P电极2、芯片N电极3对应区域的光刻胶；
15.显影，裸露出LED芯片电极金属表面和第二基板表面；
16.在第二基板表面11蒸发或溅射镀膜，使得焊接材料5填满通孔以及第二基板表面11；
17.合金处理焊料与基板和芯片电极的金属连接；
18.将上步完成品的第二基板表面11再涂敷光刻正胶8、坚膜；
19.将PAD分隔掩膜光栅9对准位置后对第二基板表面11进行曝光、显影；
20.将上步产品整体放置入蚀刻溶液中，腐蚀第二基板表面11裸露区域，蚀刻出芯片P电极2、芯片N电极3之间的绝缘道；
21.将步骤20完成品放置到去胶剂中，去除第一基板表面10、第二基板表面11的光刻胶；
22.在步骤24完成品第一基板表面10灌封装胶、封装芯片；
23.按照需要的电路设计蚀刻金属基板，制作成一定电路结构的模组或面板。
实施例2
1.芯片再分布：使用分选机(或固晶机)将单颗或多颗LED芯片1(芯片P电极和N电极在同侧面)再分布到透明胶膜上，LED芯片的第一芯片面设置在远离透明胶膜的一侧，形成阵列芯片；
2.单面热解胶板(表面平整、金属或非金属材质均可)的一个表面涂敷热解胶，然后在涂敷热解胶面涂敷光刻胶，制作过渡隔离光刻胶层7；
3.PAD分隔掩膜光栅制作：取一块透明板(石英玻璃板、塑料板或其他材质)，将阵列芯片覆盖到透明板上，在透明板另外一面沿着阵列芯片每列芯片的芯片P电极2、芯片N电极3之间粘贴一条不透明的胶条(或其他线、条)，胶条宽最小3微米，最宽为两个电极之间的距离，遮挡物需要从每列芯片的第一行芯片P电极和N电极之间的绝缘区域连续不间断的遮盖到这列芯片的最后一行芯片,在透明板粘贴胶条一面喷涂或刷涂不透明涂料，涂料干燥后撕掉胶条，制备完成PAD分隔掩膜光栅9；
4.PAD掩膜板制作：取一块石英玻璃板，单面制作金属涂层，在金属涂层上涂敷光刻负胶，将阵列芯片覆盖到金属涂层的光刻胶层上，利用陈列芯片上芯片的遮光特性，进行曝光，取下阵列芯片，将PAD分隔掩膜光栅制作透光条置于芯片P电极2、芯片N电极3中间，对准定位后，再进行曝光、显影，将显影后石英板放入蚀刻溶液中将芯片PAD电极显影区域的金属层去除，制作完成PAD掩膜板12；
5.将阵列芯片整体贴敷到步骤2制作的过渡隔离光刻胶层7上，LED芯片的第一芯片面同过渡隔离光刻胶层接触；
6.将热解胶板加热，使得与过渡隔离光刻胶接触面上的热解胶去粘，剥离热解胶板；
7.使用PAD掩膜板12对过渡隔离光刻胶层7进行曝光；
8.显影，裸露出阵列芯片电极对应区域的金属表面；
9.在远离阵列芯片一面的过渡隔离光刻胶表面蒸发或溅射镀膜，使得焊接材料5填满通孔以及整个光刻胶表面，制作阵列芯片的金属基板4；
10.然后撕掉阵列芯片上的透明胶膜；
11.合金处理焊料与芯片电极的金属连接；
12.将上步完成品的第二基板表面11涂敷光刻正胶、坚膜；
13.将PAD分隔掩膜光栅9对准位置后对第二基板表面11进行曝光、显影；
14.将上步产品放置入蚀刻溶液中，腐蚀第二基板表面11裸露区域，蚀刻出芯片P电极2、芯片N电极3之间的绝缘道；
15.将步骤14完成品放置到去胶剂中，去除第一基板表面10、第二基板表面11的光刻胶；
16.在步骤15完成品第一基板表面10灌封装胶、封装芯片；
17.按照需要的电路设计蚀刻金属基板，制作成一定电路结构的模组或面板，制作完成最终产品。
实施例3
1.芯片再分布：使用分选机(或固晶机)将单颗或多颗LED芯片1(芯片P电极和N电极不在同侧)再分布到透明胶膜上，LED芯片的第一芯片面设置在远离透明胶膜的一侧，形成阵列芯片；
2.PAD掩膜板制作：取一块石英玻璃板，单面制作金属涂层，在金属涂层上涂敷光刻负胶，将阵列芯片覆盖到金属涂层上的光刻负胶表面，利用陈列芯片上芯片的遮光特性，进行曝光，取下阵列芯片，将石英玻璃板显影，将显影后石 英玻璃板放入蚀刻溶液中将芯片PAD电极显影区域的金属层去除，制作完成PAD掩膜板12；
3.基板(铜材质)清洗：选取金属基板4，使用醋酸溶液清洗干净，去除表面污染物和氧化层，也可以使用其他酸或碱溶液进行处理；
4.过渡隔离光刻胶层涂敷：在金属基板4的第一基板表面涂(旋涂或喷涂)光刻正胶，形成过渡隔离光刻胶层7；
5.将步骤(1)制作成的阵列芯片整体贴敷到金属基板4上，阵列芯片第一芯片面与金属基板4上的过渡隔离光刻胶7接触；
6.将放置好LED芯片的光刻胶坚膜，然后撕掉透明胶膜；
7.在金属基板4的第二基板表面11涂光刻正胶、光刻胶坚膜；
8.将PAD掩膜板12在第二基板表面11对位贴紧；
9.利用PAD掩膜板12对第二基板表面11光刻胶进行曝光；
10.显影去胶，裸露出第二基板表面对应区域的金属；
11.使用蚀刻溶液，腐蚀第二基板表面11裸露区域，蚀刻出通孔；
12.将第二基板表面11去胶，裸露出基板金属层表面；
13.从第二基板表面11利用蚀刻出的通孔平行光照射，曝光LED芯片的芯片P电极2对应区域光刻胶；
14.显影去胶，裸露出LED芯片电极金属表面；
15.在第二基板表面11蒸发或溅射镀膜；
16.合金处理焊料与基板和芯片电极的金属连接；
17.再取一块金属基板4’，使用醋酸溶液清洗干净，去除表面污染物和氧化层，也可以使用其他酸或碱溶液进行处理；
18.过渡隔离光刻胶层涂敷：在金属基板4’的第一基板表面10涂(旋涂或喷涂)光刻正胶，形成过渡隔离光刻胶层7’；
19.将步骤(16)制作成的阵列芯片整体贴敷到金属基板4’上，阵列芯片第二芯片面与金属基板4’上的过渡隔离光刻胶7’接触；
20.重复上述(7)-(16)步骤制作完成阵列芯片第二电极面电极和金属基板4’的焊接；
21.去除金属基板与阵列芯片之间的过渡隔离光刻胶层；
22.蚀刻阵列芯片第一和第二芯片面上的金属基板，制作成不同电路结构；
23.灌胶封装；
24.按照需要的电路设计蚀刻金属基板，制作成一定电路结构的模组或面板。
实施例4
1.芯片再分布：使用分选机(或固晶机)将单颗或多颗LED芯片1(芯片P电极和N电极不在同侧面)再分布到透明胶膜上，LED芯片的第一芯片面设置在远离透明胶膜的一侧，形成阵列芯片；
2.单面热解胶板(表面平整、金属或非金属材质均可)的一个表面涂敷热解胶，然后在涂敷热解胶面涂敷光刻胶，制作过渡隔离光刻胶层7；
3.PAD掩膜板制作：取一块石英玻璃板，单面制作金属涂层，在金属涂层上涂敷光刻负胶，将阵列芯片覆盖到金属涂层上，利用陈列芯片上芯片的遮光特性，进行曝光，取下阵列芯片，将显影后石英板放入蚀刻溶液中将芯片PAD电极显影区域的金属层去除，制作完成PAD掩膜板12；
4.将阵列芯片整体贴敷到步骤2制作的过渡隔离光刻胶层7上，LED芯片的第一芯片面同过渡隔离光刻胶层接触；
5.将热解胶板加热，使得与过渡隔离光刻胶接触面上的热解胶去粘，剥离热解胶板；
6.使用PAD掩膜板12对过渡隔离光刻胶层进行曝光；
7.显影，裸露出阵列芯片电极对应区域的金属表面；
8.在远离阵列芯片一面的过渡隔离光刻胶表面蒸发或溅射镀膜，使得焊接材料5填满通孔以及整个光刻胶表面，制作阵列芯片的金属基板4；
9.然后撕掉阵列芯片上的透明胶膜；
10.合金处理焊料与芯片电极的金属连接；
11.取第二块单面热解胶板(表面平整、金属或非金属材质均可)的一个表面涂敷热解胶，然后在涂敷热解胶面涂敷光刻正胶，制作过渡隔离光刻胶层7；
12.将步骤(10)制作成的阵列芯片整体贴敷到第二块单面热解胶板上，阵列芯片第二芯片面与第二块热解胶板上的过渡隔离光刻胶接触；
13.重复上述(6)--(10)步骤制作完成阵列芯片第二电极面电极和金属基板的焊接；
14.去除基板与阵列芯片之间的过渡隔离光刻胶；
15.蚀刻阵列芯片第一和第二芯片面上的金属基板，制作成不同电路结构；
16.灌胶封装；
17.按照需要的电路设计蚀刻金属基板，制作成一定电路结构的模组或面板。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (10)

  1. 一种新型LED芯片封装制作方法，其特征在于，将LED芯片再分布制作成阵列芯片，形成金属基板、过渡隔离光刻胶层、阵列芯片三明治结构，对过渡隔离光刻胶层进行处理，形成阵列芯片的电极区同金属基板的焊接通道，通过焊接通道实现阵列芯片的电极与金属基板的I/O焊接。
  2. 根据权利要求1所述的新型LED芯片封装制作方法，其特征在于：首先将芯片再分布制作成阵列芯片，然后将阵列芯片电极面与过渡隔离光刻胶层接触，通过金属基板对应LED芯片电极区域光刻，蚀刻制作通孔，通过基板通孔曝光、显影阵列芯片上的过渡隔离光刻胶层，然后采用焊接技术，对阵列芯片的芯片进行电极焊接和封装，制作带电路结构的封装器件。
  3. 根据权利要求1或2所述的新型LED芯片封装制作方法，其特征在于：所述的阵列芯片包括相对设置的第一芯片面和第二芯片面，阵列芯片的电极区包括P电极和N电极，P电极和N电极处于第一芯片面，P电极和N电极之间由绝缘区隔开，金属基板包括相对设置的第一基板表面和第二基板表面，制作方法包括以下步骤：
    1)由分选机或固晶机将至少一个LED芯片固定在透明胶膜上制作成阵列芯片，其中LED芯片的第一芯片面设置在远离透明胶膜的一侧；
    2)在金属基板上形成通孔，每个LED芯片的电极区对应位置制作一个通孔；
    3)形成通孔的金属基板的第一基板表面涂敷光刻胶或感光材料制作过渡隔离光刻胶层；
    4)将透明胶膜上的阵列芯片转移固定到涂有过渡隔离光刻胶层的金属基板第一基板表面上，去除透明胶膜；
    5)从金属基板的第二基板表面射入光，对金属基本第一基板面和陈列芯片第一芯片面之间的过渡隔离光刻胶层进行曝光、显影；
    6)焊接，通过金属基板通孔，对应焊接金属基板与LED芯片电极区；
    7)去胶，将金属基板第一基板面和阵列芯片第一芯片面之间的光刻胶去除；
    8)合金，将焊接后的金属基板和芯片电极进行合金处理；
    9)灌胶、封装阵列芯片；
    10)按照需要的电路设计，在金属基板第二基板面进行金属蚀刻形成每个芯片的绝缘通道和电路连接，制作成一定电路结构的模组或面板。
  4. 根据权利要求3所述的新型LED芯片封装制作方法，其特征在于：所述的步骤2在金属基板上形成通孔具体包括以下步骤：
    2-1)在金属基板至少一面涂光刻正胶；
    2-2)将PAD掩膜板覆盖在涂有光刻正胶的一面上；
    2-3)曝光、显影、蚀刻，形成通孔，然后去胶；
    其中，PAD掩膜板上具有透明区和非透明区，透明区与阵列芯片上LED芯片的电极区对应，其他位置为非透明区。
  5. 根据权利要求4所述的新型LED芯片封装制作方法，其特征在于：所述的PAD掩膜板制作包括以下步骤：
    取一块石英玻璃板，单面制作金属涂层，在金属涂层上涂敷光刻负胶，阵列芯片覆盖到金属涂层上，进行曝光、显影，将PAD分隔掩膜光栅的透光条置于芯片正负电极中间，对准定位后，再进行曝光、显影，将显影后石英板放入蚀刻溶液中将芯片PAD电极显影区域的金属层去除，制作完成PAD掩膜板。
  6. 根据权利要求5所述的新型LED芯片封装制作方法，其特征在于：所述的还包括PAD分隔掩膜光栅制作步骤，具体为：
    选取一透明板，将阵列芯片覆盖到该透明板A面上，在透明板B面粘贴遮挡物，遮挡物不能覆盖阵列芯片上电极区对应的位置，遮挡物需要从每列芯片的第一行芯片P电极和N电极之间的绝缘区域连续连续不间断的遮盖到这列芯片的最后一行芯片，向第一透明板B面喷涂或刷涂不透明涂料，然后撕除遮挡物，形成PAD分隔掩膜光栅。
  7. 根据权利要求1所述的新型LED芯片封装制作方法，其特征在于：所述金属基板由蒸发或者溅射镀膜形成，首先在阵列芯片的电极区面预制过渡隔离光刻胶层，然后在过渡隔离光刻胶层远离阵列芯片的一面镀金属膜形成金属基板。
  8. 根据权利要求1所述的新型LED芯片封装制作方法，其特征在于：所述的阵列芯片包括相对设置的第一芯片面和第二芯片面，阵列芯片的电极区包括P电极或N电极，P电极和N电极不在同一面，制作方法包括以下步骤：
    选取金属基板，在金属基板的第一基板表面形成过渡隔离光刻胶层，将阵列芯片的第一芯片面与过渡隔离光刻胶层接触，在金属基板上形成通孔，通孔的位置与第一芯片面分布的P电极或N电极对应，焊接，通过金属基板通孔，对应焊接金属基板与LED芯片电极区；再选取一块金属基板，并在金属基板的第一基板表面形成过渡隔离光刻胶层，将阵列芯片的第二芯片面与过渡隔离光刻胶层接触，在金属基板上形成通孔，通孔的位置与第二芯片面分布的P电极或N电极对应，焊接，通过金属基板通孔，对应焊接该金属基板与LED芯片电极区，去除金属基板与阵列芯片之间的过渡隔离光刻胶层，蚀刻阵列芯片两侧的金属基板，制作出不同电路结构，灌胶封装，制作成一定电路结构的模组或面板。
  9. 根据权利要求1所述的新型LED芯片封装制作方法，其特征在于：所述的阵列芯片包括相对设置的第一芯片面和第二芯片面，阵列芯片的电极区包括P电极或N电极，P电极和N电极不在同一面，制作方法包括以下步骤：在阵列芯片的第一芯片面制作过渡隔离光刻胶层，使用PAD掩膜板对过渡隔离光刻胶层曝光，显影，裸露出阵列芯片的电极区对应的区域的金属表面，然后在过渡隔离光刻胶层表面蒸发或溅射镀膜，使得焊接材料填充通孔以及整个过渡隔离光刻胶层表面，形成阵列芯片的金属基板；然后在上述阵列芯片的第二芯片面制作过渡隔离光刻胶层，使用PAD掩膜板对过渡隔离光刻胶层曝光，显影，裸露出阵列芯片的电极区对应的区域的金属表面，然后在过渡隔离光刻胶层表面蒸发或溅射镀膜，使得焊接材料填充通孔以及整个过渡隔离光刻胶层表面，形成阵列芯片的金属基板，蚀刻阵列芯片两侧的金属基板，制作不同电路结构，去除基板与阵列芯片件的过渡隔离光刻胶层，合金处理焊料与阵列芯片电极的金属连接，灌胶封装，制作成一定电路结构的模组或面板。
  10. 根据权利要求9所述的新型LED芯片封装制作方法，在阵列芯片的第一芯片 面或第二芯片面制作过渡隔离光刻胶层的步骤，具体为，
    在单面热解胶板的热胶面制作过渡隔离光刻胶层，将阵列芯片贴覆到过渡隔离光刻胶层上，阵列芯片的第一芯片面或第二芯片面同过渡隔离光刻胶层接触，加热热解胶板，使得与过渡隔离光刻胶层接触面上的热解胶去粘，剥离热解胶板。
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