WO2020136901A1 - 光硬化性粘着剤の評価方法、ダイシング・ダイボンディング一体型フィルム及びその製造方法、並びに半導体装置の製造方法 - Google Patents

光硬化性粘着剤の評価方法、ダイシング・ダイボンディング一体型フィルム及びその製造方法、並びに半導体装置の製造方法 Download PDF

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WO2020136901A1
WO2020136901A1 PCT/JP2018/048581 JP2018048581W WO2020136901A1 WO 2020136901 A1 WO2020136901 A1 WO 2020136901A1 JP 2018048581 W JP2018048581 W JP 2018048581W WO 2020136901 A1 WO2020136901 A1 WO 2020136901A1
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Prior art keywords
adhesive layer
sensitive adhesive
dicing
photo
pressure
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PCT/JP2018/048581
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English (en)
French (fr)
Japanese (ja)
Inventor
美千子 彼谷
義信 尾崎
大久保　恵介
Original Assignee
日立化成株式会社
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Application filed by 日立化成株式会社 filed Critical 日立化成株式会社
Priority to PCT/JP2018/048581 priority Critical patent/WO2020136901A1/ja
Priority to JP2020562295A priority patent/JP7099547B2/ja
Priority to CN201880100421.8A priority patent/CN113228237A/zh
Priority to KR1020217021116A priority patent/KR102699401B1/ko
Priority to SG11202106221PA priority patent/SG11202106221PA/en
Priority to TW108147291A priority patent/TWI816004B/zh
Publication of WO2020136901A1 publication Critical patent/WO2020136901A1/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N19/00—Investigating materials by mechanical methods
    • G01N19/04—Measuring adhesive force between materials, e.g. of sealing tape, of coating
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a photocurable pressure sensitive adhesive evaluation method, a dicing/die bonding integrated film and its manufacturing method, and a semiconductor device manufacturing method.
  • a dicing process for separating a semiconductor wafer into individual semiconductor chips and a die bonding process for adhering the separated semiconductor chips to a lead frame, a package substrate, etc. are usually provided.
  • a dicing/die-bonding integrated film which is a combination of a die-bonding film having an adhesive layer used for adhesion, is mainly used.
  • the dicing/die-bonding integrated film used for manufacturing a thin semiconductor chip is required to have a high success rate of pickup and a short peeling time in the pickup, and form a photocurable pressure-sensitive adhesive layer.
  • the selection of photo-curable adhesive is important.
  • JP-A-2003-338467 JP, 2004-017639 A JP, 2006-089521, A JP, 2006-266798, A JP, 2014-055250, A JP, 2014-181258, A JP, 2005-028146, A
  • the present invention has been made in view of such circumstances, and its main object is to provide a new evaluation method for a photocurable pressure-sensitive adhesive used in a dicing/die-bonding integrated film.
  • Factors that influence the releasability between the adherend and the adhesive include the adhesive strength of the adhesive (bulk property of the adhesive), the interaction at the interface between the adherend and the adhesive (surface property of the adhesive), etc. Can be mentioned. It is generally known that the bulk property contributes to the peeling property more than the surface property, and the peeling property tends to be controlled by adjusting the bulk property.
  • the inventors of the present invention have made diligent studies and found that when the adherend and the pressure-sensitive adhesive were peeled off, a specific stringing phenomenon was observed more than when no stringing phenomenon was observed. In this case, it was found that the peeling progress was accelerated by the propagation of the breaking impact of the stringer, and the peeling speed was improved, and the present invention was completed.
  • One aspect of the present invention provides a method for evaluating a photocurable pressure-sensitive adhesive used in a dicing/die-bonding integrated film.
  • This photocurable pressure-sensitive adhesive evaluation method is a substrate layer, a photo-curable pressure-sensitive adhesive layer made of a photo-curable pressure-sensitive adhesive, and an adhesive layer are prepared in this order to prepare a dicing/die-bonding integrated film, Irradiate the photocurable pressure-sensitive adhesive layer with ultraviolet rays under the following irradiation conditions to form a cured product of the photocurable pressure-sensitive adhesive layer, and under the following peeling conditions, a cured product of the adhesive layer and the photocurable pressure-sensitive adhesive layer: The first step of measuring the peeling force when the film is peeled off, and the dicing/die bonding in which the base material layer, the photo-curable pressure-sensitive adhesive layer made of a photo-curable pressure-sensitive adhesive, and the adhesive layer are laminated in this order.
  • Prepare a body film treat the photocurable pressure-sensitive adhesive layer under the following heating and cooling conditions, and irradiate the photocurable pressure-sensitive adhesive layer with ultraviolet rays under the following irradiation conditions to obtain a cured product of the photocurable pressure-sensitive adhesive layer.
  • the adhesive layer and the cured product of the photocurable pressure-sensitive adhesive layer are peeled under the following peeling conditions, and the surface of the cured product of the photocurable pressure-sensitive adhesive layer after the adhesive layer is peeled off is scanned with a scanning probe microscope.
  • the second step of measuring the number and width of traces of thread-plucking marks on the surface, and the quality of the photo-curable adhesive is determined based on the peeling force and the number and width of traces of plucking marks.
  • a third step Irradiation conditions
  • Irradiation intensity 70 mW/cm 2
  • Integrated light intensity 150 mJ/cm 2
  • Temperature 25 ⁇ 5°C
  • Humidity 55 ⁇ 10% Peeling angle: 30° Peeling speed: 600 mm/min (heating and cooling conditions)
  • Cooling treatment Air cooling to 25 ⁇ 5°C for 30 minutes
  • Such a photo-curable pressure-sensitive adhesive evaluation method is to check in advance whether the photo-curable pressure-sensitive adhesive to be used as the photo-curable pressure-sensitive adhesive layer of the dicing/die-bonding integrated film has excellent pickup property. Useful for forecasting.
  • the third step is a step of judging the quality of the photocurable pressure-sensitive adhesive based on whether or not the peeling force and the number and width of traces of the string-plucking traces satisfy the following conditions (a) and (b). Good.
  • the median width of the thread-plucking marks is 120 to 200 nm.
  • the photocurable pressure-sensitive adhesive contains a (meth)acrylic copolymer having a reactive functional group, a photopolymerization initiator, and a crosslinking agent having two or more functional groups capable of reacting with the reactive functional group.
  • the (meth)acrylic copolymer may further contain a methacrylic acid monomer unit.
  • the adhesive layer may contain an epoxy resin, an epoxy resin curing agent, and a (meth)acrylic copolymer having an epoxy group.
  • the present invention on the substrate layer, a step of forming a photo-curable pressure-sensitive adhesive layer made of a photo-curable pressure-sensitive adhesive determined to be good in the above-mentioned photo-curable pressure-sensitive adhesive evaluation method, And a step of forming an adhesive layer on the photocurable pressure-sensitive adhesive layer, to provide a method for producing a dicing/die-bonding integrated film.
  • the present invention provides a step of attaching an adhesive layer of a dicing/die-bonding integrated film obtained by the above-described manufacturing method to a semiconductor wafer, the semiconductor wafer, the adhesive layer, and the photocurable pressure-sensitive adhesive layer. Dicing into individual pieces, irradiating the photo-curable pressure-sensitive adhesive layer with ultraviolet rays to form a cured product of the photo-curable pressure-sensitive adhesive layer, and adhering from the cured product of the photo-curable pressure-sensitive adhesive layer.
  • a method for manufacturing a semiconductor device which comprises a step of picking up a semiconductor element to which an agent layer is attached and a step of adhering the semiconductor element to a support substrate for mounting the semiconductor element via an adhesive layer.
  • the thickness of the semiconductor wafer may be 35 ⁇ m or less.
  • the dicing may be an application of stealth dicing.
  • the present invention comprises a substrate layer, a photo-curable pressure-sensitive adhesive layer made of a photo-curable pressure-sensitive adhesive determined to be good in the above-mentioned photo-curable pressure-sensitive adhesive evaluation method, and an adhesive layer.
  • a dicing/die bonding integrated film provided in this order is provided.
  • a new evaluation method for a photocurable pressure-sensitive adhesive used in a dicing/die-bonding integrated film there is provided a dicing/die bonding integrated film and a method for producing the same, which is based on such a method for evaluating a photocurable pressure-sensitive adhesive. Further, according to the present invention, there is provided a method of manufacturing a semiconductor device using such a dicing/die bonding integrated film.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of an integrated dicing/die bonding film.
  • FIG. 2 is a diagram showing an example of a shape image profile and a phase image profile of a surface of a cured product of a photocurable pressure-sensitive adhesive layer, FIG. 2( a) is a shape image profile, and FIG. 2( b) is , A phase image profile.
  • FIG. 3 is a diagram showing an example of a cross-sectional profile of the surface of the cured product of the photocurable pressure-sensitive adhesive layer, FIG. 3( a) is a shape image profile, and FIG. 3( b) is FIG. 3) is a cross-sectional profile of the line drawing mark X taken along line iii-ii.
  • FIG. 4 is a diagram showing an example of a cross-sectional profile of the surface of the cured product of the photocurable pressure-sensitive adhesive layer
  • FIG. 4( a) is a shape image profile
  • FIG. 4( b) is FIG. 4( a ).
  • 4) is a cross-sectional profile of the line drawing mark Y taken along line iv-iv.
  • FIG. 5 is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing a semiconductor device, and FIGS. 5A, 5B, 5C, 5D, and 5E show each step. It is a schematic cross section which shows.
  • FIG. 6 is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing a semiconductor device, and FIGS. 6F, 6G, 6H, and 6I are schematic cross-sectional views showing each step. It is a figure.
  • FIG. 7 is a schematic cross-sectional view showing an embodiment of a semiconductor device.
  • the numerical range indicated by using “to” indicates the range including the numerical values before and after “to” as the minimum value and the maximum value, respectively.
  • the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another stepwise described numerical range.
  • the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
  • (meth)acrylate means acrylate or corresponding methacrylate.
  • the “threading” is a modified form of the pressure-sensitive adhesive between the adherend and the pressure-sensitive adhesive, and when the pressure-sensitive adhesive is separated from the pressure-sensitive adhesive, It means a large deformation like a thread without being broken between and.
  • “Threading mark” means that the adhesive is broken and partially contracted after the stringing occurs, that the adhesive is largely deformed and then partially contracted, or that the adhesive is irreversibly stretched or largely deformed. It means what is observed as a mark (projection) on the surface of the pressure-sensitive adhesive by being peeled off from the adherend and then partially contracted.
  • the method for evaluating a photocurable pressure-sensitive adhesive used in the dicing/die-bonding integrated film is a base layer, a photocurable pressure-sensitive adhesive layer made of a photocurable pressure-sensitive adhesive, and an adhesive layer in this order.
  • Prepare a laminated dicing/die-bonding integrated film irradiate the photocurable pressure-sensitive adhesive layer with ultraviolet light under specific irradiation conditions to form a cured product of the photocurable pressure-sensitive adhesive layer, and perform specific peeling.
  • an adhesive layer are laminated in this order to prepare a dicing/die-bonding integrated film, treat the photocurable pressure-sensitive adhesive layer under specific heating and cooling conditions, and subject the photocurable pressure-sensitive adhesive layer to specific irradiation.
  • UV light is irradiated under the conditions to form a cured product of the photocurable pressure-sensitive adhesive layer, and the adhesive layer and the cured product of the photocurable pressure-sensitive adhesive layer are separated under specific peeling conditions, and the adhesive layer is separated.
  • a photocurable pressure-sensitive adhesive that is cured by irradiation with ultraviolet rays can be an evaluation target.
  • a photocurable pressure-sensitive adhesive to be evaluated a (meth)acrylic copolymer having a reactive functional group, a photopolymerization initiator, and two or more functional groups capable of reacting with the reactive functional group are provided.
  • a photocurable pressure-sensitive adhesive containing a crosslinking agent will be described.
  • the (meth)acrylic copolymer having a reactive functional group is, for example, one or more types of (meth)acrylate monomer (a1) or (meth)acrylic acid, and one type having a reactive functional group. Alternatively, it can be obtained by copolymerizing two or more kinds of polymerizable compounds (a2).
  • Examples of the (meth)acrylate monomer (a1) include linear or branched alkyl (meth)acrylate, alicyclic (meth)acrylate, aromatic (meth)acrylate, alkoxyalkyl (meth)acrylate, and alkoxy (poly). It may be at least one selected from the group consisting of alkylene glycol (meth)acrylate, alkoxyalkoxyalkyl (meth)acrylate, and dialkylaminoalkyl (meth)acrylate.
  • linear or branched alkyl (meth)acrylate examples include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, t- Examples thereof include butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, stearyl (meth)acrylate, lauryl (meth)acrylate, and tridecyl (meth)acrylate.
  • alicyclic (meth)acrylate examples include cyclohexyl (meth)acrylate, isobornyl (meth)acrylate, dicyclopentanyl (meth)acrylate and the like.
  • aromatic (meth)acrylates examples include phenoxyethyl (meth)acrylate.
  • alkoxyalkyl (meth)acrylates examples include ethoxyethyl (meth)acrylate and butoxyethyl (meth)acrylate.
  • alkoxy(poly)alkylene glycol(meth)acrylate examples include methoxydiethylene glycol(meth)acrylate, ethoxydiethylene glycol(meth)acrylate, methoxytriethylene glycol(meth)acrylate, butoxytriethylene glycol(meth)acrylate, methoxydipropylene. Examples thereof include glycol (meth)acrylate.
  • alkoxyalkoxyalkyl (meth)acrylates examples include 2-methoxyethoxyethyl (meth)acrylate and 2-ethoxyethoxyethyl (meth)acrylate.
  • dialkylaminoalkyl (meth)acrylate examples include N,N-dimethylaminoethyl (meth)acrylate and N,N-diethylaminoethyl (meth)acrylate.
  • the polymerizable compound (a2) may have at least one reactive functional group selected from the group consisting of a hydroxy group and an epoxy group. Since the hydroxy group and the epoxy group have good reactivity with the compound (b) having an isocyanate group or the like, they can be preferably used.
  • the polymerizable compound (a2) preferably has a hydroxy group.
  • Examples of the polymerizable compound (a2) having a hydroxy group as a reactive functional group include hydroxyalkyl such as 2-hydroxyethyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate and 2-hydroxypropyl (meth)acrylate. (Meth)acrylate etc. are mentioned.
  • Examples of the polymerizable compound (a2) having an epoxy group as a reactive functional group include (meth)acrylate having an epoxy group such as glycidyl (meth)acrylate and 3,4-epoxycyclohexyl (meth)acrylate. ..
  • the (meth)acrylic copolymer may contain (meth)acrylic acid as a monomer unit. Further, in addition to the (meth)acrylate monomer (a1) and the polymerizable compound (a2), another polymerizable compound may be contained as a monomer unit. Examples of other polymerizable compounds include aromatic vinyl compounds such as styrene and vinyltoluene.
  • the (meth)acrylic copolymer having a reactive functional group may further have a chain-polymerizable functional group. That is, it may have a main chain made of a (meth)acrylic copolymer having a reactive functional group and a side chain containing a polymerizable double bond and bonded to the main chain.
  • the side chain containing the polymerizable double bond may be a (meth)acryloyl group, but is not limited thereto.
  • a (meth)acrylic copolymer having a chain-polymerizable functional group has a functional group that reacts with a reactive functional group of a (meth)acrylic copolymer having a reactive functional group and a chain-polymerizable functional group. It can be obtained by reacting one or more compounds (b) with each other to introduce a chain-polymerizable functional group into the side chain of the (meth)acrylic copolymer.
  • Examples of the functional group that reacts with a reactive functional group include an isocyanate group and the like.
  • compound (b) having an isocyanate group examples include 2-methacryloxyethyl isocyanate (for example, Showa Denko KK, trade name “Karenzu MOI”).
  • the content of the compound (b) may be 0.3 to 1.5 mmol/g based on the (meth)acrylic copolymer having a reactive functional group.
  • the acid value of the (meth)acrylic copolymer having a reactive functional group may be, for example, 0 to 150 mgKOH/g.
  • the hydroxyl value of the (meth)acrylic copolymer having a reactive functional group may be, for example, 0 to 150 mgKOH/g.
  • the acid value and the hydroxyl value are measured according to JIS K0070.
  • the weight average molecular weight (Mw) of the (meth)acrylic copolymer having a reactive functional group may be 100,000 to 1,000,000, 200,000 to 800,000, or 300,000 to 700,000.
  • the weight average molecular weight is a polystyrene conversion value using a calibration curve based on standard polystyrene by gel permeation chromatography (GPC).
  • the photopolymerization initiator is not particularly limited as long as it initiates polymerization by irradiation with ultraviolet rays, and examples thereof include a photoradical polymerization initiator.
  • the photoradical polymerization initiator include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; ⁇ -hydroxyketones such as 1-hydroxycyclohexylphenyl ketone; 2-benzyl-2- ⁇ -aminoketones such as dimethylamino-1-(4-morpholinophenyl)-butan-1-one; oximes such as 1-[4-(phenylthio)phenyl]-1,2-octadione-2-(benzoyl)oxime Ester; phosphine oxide such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide; 2,4,5-triarylimidazole diamine such as 2-(o-chloroph
  • the content of the photopolymerization initiator may be 0.1 to 10 parts by mass or 0.5 to 5 parts by mass with respect to 100 parts by mass of the (meth)acrylic copolymer.
  • the cross-linking agent is not particularly limited as long as it is a compound having two or more functional groups capable of reacting with the reactive functional group (epoxy group, hydroxy group, etc.) of the (meth)acrylic copolymer having a reactive functional group.
  • the bond formed by the reaction between the cross-linking agent and the (meth)acrylic copolymer having a reactive functional group include an ester bond, an ether bond, an amide bond, an imide bond, a urethane bond, and a urea bond. ..
  • cross-linking agent examples include compounds having two or more isocyanate groups in one molecule. When such a compound is used, it easily reacts with the reactive functional group of the (meth)acrylic copolymer, so that the tackiness and stringiness tend to be easily controlled.
  • Examples of the compound having two or more isocyanate groups in one molecule include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4, 4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, lysine isocyanate, etc. And the isocyanate compound of.
  • Specific examples of the compound having two or more isocyanate groups in one molecule include polyfunctional isocyanate (manufactured by Nippon Polyurethane Industry Co., Ltd., trade name “Coronate L”).
  • the cross-linking agent may be a reaction product of the above-mentioned isocyanate compound and a polyhydric alcohol having two or more hydroxy groups in one molecule (isocyanate group-containing oligomer).
  • examples of the polyhydric alcohol having two or more hydroxy groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octanediol, 1,9-nonanediol, and 1 , 10-decanediol, 1,11-undecanediol, 1,12-dodecanediol, glycerin, pentaerythritol, dipentaerythritol, 1,4-cyclohexanediol, 1,3-cyclohexanediol and the like.
  • the crosslinking agent is a reaction product (isocyanate group-containing oligomer) of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more hydroxy groups in one molecule. May be.
  • isocyanate group-containing oligomer As a crosslinking agent, the photocurable pressure-sensitive adhesive layer 20 tends to form a denser crosslinked structure.
  • the content of the cross-linking agent may be, for example, 3 to 50 mass% with respect to the total mass of the (meth)acrylic copolymer.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of an integrated dicing/die bonding film.
  • the dicing/die-bonding integrated film 1 includes a base material layer 10, a photo-curable pressure-sensitive adhesive layer 20 made of a photo-curable pressure-sensitive adhesive, and an adhesive layer 30 laminated in this order.
  • the base material layer 10 may be a known polymer sheet or film, and is not particularly limited as long as it is made of a material that can be expanded in the die bonding step.
  • a material include crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polybutene, polymethylpentene, and other polyolefins; Ethylene-vinyl acetate copolymer; ionomer resin; ethylene-(meth)acrylic acid copolymer; ethylene-(meth)acrylic acid ester (random, alternating) copolymer; ethylene-propylene copolymer; ethylene-butene copolymer Polymers; ethylene-hexene copolymers; polyurethanes; polyesters such as polyethylene terephthalate and polyethylene na
  • the base material layer 10 is made of polyethylene, polypropylene, polyethylene-polypropylene random copolymer, and polyethylene-from the viewpoint of properties such as Young's modulus, stress relaxation property, melting point, price, recycling of waste materials after use, and the like. It may have a surface containing at least one material selected from polypropylene block copolymers as a main component, and the surface is in contact with the photocurable pressure-sensitive adhesive layer 20.
  • the base material layer 10 may be a single layer or a multilayer including two or more layers made of different materials.
  • the base material layer 10 may be subjected to surface roughening treatment such as corona discharge treatment or mat treatment, if necessary, from the viewpoint of controlling the adhesion with the photo-curable pressure-sensitive adhesive layer 20 described later.
  • the thickness of the base material layer 10 may be 70 to 120 ⁇ m or 80 to 100 ⁇ m. When the thickness of the base material layer 10 is 70 ⁇ m or more, damage due to expansion tends to be more suppressed. When the thickness of the base material layer 10 is 120 ⁇ m or less, the stress in the pickup easily reaches the adhesive layer, and the pickup property tends to be more excellent.
  • the photocurable pressure-sensitive adhesive layer 20 is a layer made of the above-mentioned photocurable pressure-sensitive adhesive.
  • the photocurable pressure-sensitive adhesive layer 20 is formed on the base material layer 10.
  • a varnish for forming a photocurable pressure sensitive adhesive layer is prepared, and the varnish is applied to the base material layer 10 to obtain the varnish.
  • the photo-curable pressure-sensitive adhesive layer 20 by removing the volatile components of the varnish, and coating the varnish on a release-treated film to remove the volatile components of the varnish to remove the volatile component of the photo-curable pressure-sensitive adhesive layer. 20 is formed, and the obtained photocurable pressure-sensitive adhesive layer 20 is transferred to the base material layer 10.
  • the varnish for forming a photocurable pressure-sensitive adhesive layer comprises a (meth)acrylic copolymer having a reactive functional group, a photopolymerization initiator, and a crosslinking agent having two or more functional groups capable of reacting with the reactive functional group and an organic solvent.
  • a (meth)acrylic copolymer having a reactive functional group, a photopolymerization initiator, and a cross-linking agent having two or more functional groups capable of reacting with the reactive functional group can be used. May be volatilized by.
  • organic solvents examples include aromatic hydrocarbons such as toluene and xylene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; alcohols such as methanol, ethanol, ethylene glycol and propylene glycol; acetone, methyl ethyl ketone and methyl.
  • Ketones such as isobutyl ketone and cyclohexanone; esters such as methyl acetate, ethyl acetate and ⁇ -butyrolactone; carbonic acid esters such as ethylene carbonate and propylene carbonate; ethylene glycol monomethyl ether, ethylene glycol dimethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether , Polyhydric alcohol alkyl ethers such as propylene glycol dimethyl ether; polyhydric alcohol alkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl Examples include amides such as 2-pyrrolidone. These may be used alone or in combination of two or more.
  • the solid content concentration of the varnish may be 10 to 60% by weight, based on the total weight of the varnish.
  • the thickness of the photocurable pressure-sensitive adhesive layer 20 may be, for example, 1 to 200 ⁇ m, 3 to 50 ⁇ m, or 5 to 30 ⁇ m.
  • the adhesive layer 30 is a layer made of an adhesive.
  • the adhesive is not particularly limited as long as it is an adhesive used in the field of die bonding film.
  • an adhesive containing an epoxy resin, an epoxy resin curing agent, and a (meth)acrylic copolymer having an epoxy group will be described.
  • the adhesive layer 30 made of such an adhesive it is possible to provide excellent adhesiveness between the chips and the substrate and between the chips, and to impart electrode embedding properties, wire embedding properties, and the like. In addition, it becomes possible to bond at low temperature in the die bonding process.
  • epoxy resin examples include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, bisphenol F novolac type epoxy resin.
  • Dicyclopentadiene skeleton-containing epoxy resin Dicyclopentadiene skeleton-containing epoxy resin, stilbene type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolphenol methane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenylaralkyl type epoxy resin, Examples thereof include naphthalene type epoxy resins, polyfunctional phenols, and diglycidyl ether compounds of polycyclic aromatics such as anthracene. These may be used alone or in combination of two or more.
  • the epoxy resin curing agent may be, for example, a phenolic resin.
  • the phenol resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule.
  • examples of the phenolic resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and/or naphthols such as ⁇ -naphthol, ⁇ -naphthol and dihydroxynaphthalene, and formaldehyde.
  • a novolak type phenolic resin obtained by condensation or co-condensation with a compound having an aldehyde group such as, for example, allylated bisphenol A, allylated bisphenol F, allylated naphthalene diol, phenol novolac, phenols and the like, and Examples thereof include phenol aralkyl resin and naphthol aralkyl resin synthesized from naphthols and dimethoxyparaxylene or bis(methoxymethyl)biphenyl. These may be used alone or in combination of two or more.
  • the (meth)acrylic copolymer having an epoxy group may be a copolymer prepared by adjusting glycidyl (meth)acrylate as a raw material in an amount of 0.5 to 6% by mass based on the resulting copolymer. .. When the amount is 0.5% by mass or more, high adhesive strength tends to be easily obtained, and when the amount is 6% by mass or less, gelation tends to be suppressed.
  • the balance of glycidyl (meth)acrylate may be a mixture of alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms such as methyl (meth)acrylate and styrene and acrylonitrile.
  • the alkyl (meth)acrylate may include ethyl (meth)acrylate and/or butyl (meth)acrylate.
  • the mixing ratio of each component can be adjusted in consideration of the Tg (glass transition point) of the obtained (meth)acrylic copolymer having an epoxy group.
  • Tg glass transition point
  • the upper limit of Tg of the (meth)acrylic copolymer having an epoxy group may be, for example, 30°C.
  • the weight average molecular weight of the (meth)acrylic copolymer having an epoxy group may be 100,000 or more, and may be 300,000 to 3,000,000 or 500,000 to 2,000,000. When the weight average molecular weight is 3,000,000 or less, deterioration of the filling property between the semiconductor chip and the supporting substrate tends to be controlled.
  • the weight average molecular weight is a polystyrene conversion value using a calibration curve based on standard polystyrene by gel permeation chromatography (GPC).
  • the adhesive may further contain a curing accelerator such as a tertiary amine, imidazoles, or quaternary ammonium salts, if necessary.
  • a curing accelerator such as a tertiary amine, imidazoles, or quaternary ammonium salts, if necessary.
  • the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate. These may be used alone or in combination of two or more.
  • the adhesive may further contain an inorganic filler, if necessary.
  • an inorganic filler for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystalline Examples thereof include silica and amorphous silica. These may be used alone or in combination of two or more.
  • the adhesive layer 30 is formed on the photocurable pressure-sensitive adhesive layer 20.
  • an adhesive layer-forming varnish is prepared, and the varnish is applied on a release-treated film to form an adhesive.
  • a method of forming the layer 30 and transferring the obtained adhesive layer 30 to the photocurable pressure-sensitive adhesive layer 20 can be mentioned.
  • the adhesive layer-forming varnish contains an epoxy resin, an epoxy resin curing agent, a (meth)acrylic copolymer having an epoxy group, and an organic solvent.
  • the organic solvent may be the same as the organic solvent used in the varnish for forming a photocurable pressure-sensitive adhesive layer.
  • the thickness of the adhesive layer 30 may be, for example, 1 to 300 ⁇ m, 5 to 150 ⁇ m, or 10 to 100 ⁇ m.
  • the stringing can occur due to the interaction at the interface between the adhesive layer and the cured product of the photocurable pressure-sensitive adhesive layer. Therefore, one of the influencing factors of the stringing phenomenon is the type and content of the crosslinking agent. For example, when the content of the cross-linking agent is decreased, the number of traces of the thread-plucking marks tends to increase and the width of the traces of the thread-plucking marks tends to increase. Therefore, by adjusting the type and content of the cross-linking agent, it is possible to control the number and width of the line-plucking marks.
  • the coating conditions can be mentioned.
  • the coating conditions such as the coating speed, the coating temperature, and the air volume
  • the number and width of the line-plucking traces can be controlled.
  • a dicing/die-bonding integrated film for evaluation in which a base material layer, a photo-curable pressure-sensitive adhesive layer made of a photo-curable pressure-sensitive adhesive to be evaluated, and an adhesive layer are laminated in this order is prepared. ..
  • the types of the base material layer, the photo-curable pressure-sensitive adhesive layer, and the adhesive layer are not particularly limited, and an arbitrarily selected dicing/die-bonding integrated film should be used.
  • the thickness of the photo-curable pressure-sensitive adhesive composed of the photo-curable pressure-sensitive adhesive that is the object of evaluation can be set to 10 ⁇ m, for example.
  • the thickness of the adhesive layer may be 10 ⁇ m, for example.
  • the photocurable adhesive layer is irradiated with ultraviolet rays under the following irradiation conditions to form a cured product of the photocurable adhesive layer.
  • the ultraviolet light source can be appropriately selected depending on the type of photopolymerization initiator used.
  • the light source of ultraviolet light is not particularly limited, but may be one kind selected from the group consisting of a low pressure mercury lamp, a far ultraviolet lamp, an excimer ultraviolet lamp, a high pressure mercury lamp, and a metal halide lamp. Of these, the ultraviolet light source is preferably a high pressure mercury lamp having a central wavelength of 365 nm. Further, in the irradiation of ultraviolet rays, a cold mirror or the like may be used together in order to reduce the influence of heat emitted from the light source.
  • the irradiation temperature under UV irradiation conditions may be 60°C or lower or 40°C or lower.
  • a dicing/die-bonding integrated film for evaluation in which a base material layer, a photo-curable pressure-sensitive adhesive layer made of a photo-curable pressure-sensitive adhesive to be evaluated, and an adhesive layer are laminated in this order is prepared. ..
  • the evaluation dicing/die-bonding integrated film in the second step may be the same as the evaluation dicing/die-bonding integrated film in the first step, but the peeling force in the first step is measured. Use what is not.
  • the photo-curable pressure-sensitive adhesive layer of the dicing/die-bonding integrated film for evaluation is treated under the following heating and cooling conditions. If the photocurable pressure-sensitive adhesive layer is not treated under heating and cooling conditions, the adhesiveness between the photocurable pressure-sensitive adhesive layer and the adhesive layer may be insufficient, and the cured product of the adhesive layer and the photocurable pressure-sensitive adhesive layer When the and are peeled off, the stringing marks tend to be difficult to be observed.
  • the heating/cooling conditions described below assume a wafer laminating process for a semiconductor device, and tend to cause stringing marks to be more easily observed.
  • the heat treatment under heating and cooling conditions is preferably performed from the side of the base material layer using a heater or the like.
  • the base material layer a material that does not cause deformation such as wrinkles and sagging by heat treatment (65° C., 15 minutes).
  • heat treatment it is preferable that the evaluation dicing/die bonding integrated film is heated while being suppressed by a cloth or the like that can withstand heating so as not to bend.
  • the surface pressure at this time may be about 0.1 g/cm 2 . If the surface pressure is too high, the photocurable pressure-sensitive adhesive layer and the adhesive layer may adhere to each other more than necessary, and excessive stringing marks may be formed. In order to prevent curing of the photocurable pressure-sensitive adhesive layer, it is preferable to perform the treatment while shielding light.
  • the photocurable pressure-sensitive adhesive layer is irradiated with ultraviolet rays under the same irradiation conditions as in the first step to form a cured product of the photocurable pressure-sensitive adhesive layer, and the adhesive layer is formed in the same manner as in the first step.
  • the adhesive layer and the cured product of the photocurable pressure-sensitive adhesive layer are peeled off by pulling under the peeling condition of.
  • the base material layer including the cured product of the photocurable pressure-sensitive adhesive layer after the adhesive layer is peeled off is collected as a measurement sample.
  • the cured product of the photocurable pressure-sensitive adhesive layer after the adhesive layer is peeled off is collected so as not to be contaminated.
  • the base material layer provided with the cured product of the photocurable pressure-sensitive adhesive layer after the adhesive layer has been peeled is cut into a size of 5 mm ⁇ 5 mm to obtain a measurement sample.
  • the probe of the scanning probe microscope is preferably provided with a cantilever having a low spring constant, which is optimal for measuring the surface of the cured product of the photocurable adhesive layer after the adhesive layer is peeled off. .. Further, it is preferable that the observation with the scanning probe microscope is performed in the dynamic force mode (DFM).
  • DFM dynamic force mode
  • the stringing marks are observed as marks (protrusions) on the surface of the cured product of the photocurable pressure-sensitive adhesive layer, and data of the phase image of the surface of the cured product of the photocurable pressure-sensitive adhesive layer are acquired, In the phase image, a portion where the hardness is obviously different from the surrounding can be used as the string-plucking mark.
  • the number of traces of the stringing mark is the number of places where the hardness is clearly different from the surroundings in the phase image.
  • the width of the stringing trace can be obtained as follows. First, using a scanning probe microscope, the shape image profile and the phase image profile of the surface of the cured product of the photocurable pressure-sensitive adhesive layer including the portion where the hardness is apparently different from the surroundings are acquired.
  • FIG. 2 is a diagram showing an example of a shape image profile and a phase image profile of a surface of a cured product of a photocurable pressure-sensitive adhesive layer
  • FIG. 2( a) is a shape image profile
  • FIG. 2( b) is , A phase image profile.
  • FIG. 2( a) is a shape image profile
  • FIG. 2( b) is , A phase image profile.
  • the stringing trace is observed as a graph in which the raised portion is convex upward and is shown in the lightest color (for example, white in the case of a monochrome image).
  • the phase difference being smaller than the surroundings means that the phase difference is harder than the surroundings.
  • the thread-plucking traces are observed as locations where the phase difference from the surroundings is 50% or less than the surroundings because the photo-curable adhesive layer is stretched to the limit, and the most It is shown in a dark color (for example, black in the case of a monochrome image). In this way, the stringing marks can be observed not only from the shape image profile but also from the phase image profile.
  • FIG. 3 is a diagram showing an example of a cross-sectional profile of the surface of the cured product of the photocurable pressure-sensitive adhesive layer
  • FIG. 3( a) is a shape image profile
  • FIG. 3( b) is FIG. 3) is a cross-sectional profile of the line drawing mark X taken along line iii-iii.
  • FIG. 3B is a cross-sectional profile in the case where there is substantially no difference in the height of both ends of the observed thread-plucking trace (for example, 1 nm or less).
  • the width Wx between both ends (minimum value) of the thread pulling trace X can be set as the width of the thread pulling trace X.
  • FIG. 4 is a diagram showing an example of a cross-sectional profile of the surface of the cured product of the photocurable pressure-sensitive adhesive layer
  • FIG. 4A is a shape image profile
  • FIG. 4B is FIG. It is the iv-iv line cross-sectional profile of the stringing trace Y in (a).
  • the end (minimum value) whose height is closer to the apex of the thread pulling trace Y can be set as the reference height Hy
  • the width Wy at the reference height Hy can be set as the trace width of the thread pulling trace Y.
  • ⁇ Third step> the quality of the photocurable pressure-sensitive adhesive is judged based on the peeling force and the number and width of traces of the string-plucking traces.
  • the criteria of the peeling force, the number of traces of the line-plucking traces, and the width of the traces, which are the evaluation criteria, can be appropriately set according to the thickness of the semiconductor wafer and the like.
  • the third step is a step of judging the quality of the photocurable pressure-sensitive adhesive based on whether or not the peeling force and the number and width of traces of the string-plucking traces satisfy the following conditions (a) and (b).
  • Good A dicing/die-bonding integrated film including a photo-curable pressure-sensitive adhesive layer made of a photo-curable pressure-sensitive adhesive that satisfies the following conditions (a) and (b) is a semiconductor wafer having a relatively small thickness (for example, 35 ⁇ m or less). Can be suitably used for the dicing process applied to (for example, stealth dicing).
  • the peeling force under the condition (a) may be 0.65 N/25 mm or less or 0.63 N/25 mm or less.
  • the lower limit of the peeling force under the condition (a) is not particularly limited, but may be 0.10 N/25 mm or more.
  • the presence of a specific region on the surface of the cured product of the photocurable pressure-sensitive adhesive layer after the adhesive layer has been peeled off tends to improve the stress propagation property and improve the peeling speed.
  • the number of traces of the stringing present in the specific region may be 15 or more or 20 or more, and 70 or less, 60 or less, or 50 or less.
  • the peeling speed is contributed by both the existence of the specific region and the width of the string piercing marks existing in the specific region.
  • the number of traces of the string-plucking traces is 15 or more in the specific region, the stress propagation property is high and the peeling speed tends to be promoted.
  • the specific region if the number of traces of the string-plucking traces is 70 or less, it tends to be possible to prevent the peeling force from increasing excessively.
  • the scratch marks existing in these specific areas Calculate the median of the scar width.
  • the median means a value located at the center when a finite number of data are arranged in ascending order, and when the data is an even number, it means an average value of values close to the center.
  • the trace width of the 8th string-pulling trace when the trace widths of the string-pulling traces are arranged in ascending order is the median value
  • the number of traces of the string-pulling trace is 16
  • the average value of the trace widths of the eighth and the ninth pulling marks when the trace widths of the pulling marks are arranged in ascending order is the median value.
  • the median width of the thread-plucking marks existing in the specific region may be 130 nm or more or 150 nm or more, and 190 nm or less or 180 nm or less.
  • the median value of the widths of the string-pulling marks existing in the specific region is 120 nm or more, the breaking impact of the string-pulling is easily propagated, and the peeling speed tends to be improved.
  • the median value of the widths of the thread-plucking marks existing in the specific region is 200 nm or less, the thread-pulling is likely to break and the peeling speed tends to be improved.
  • a method for producing a dicing/die-bonding integrated film is a photocurable adhesive comprising a photocurable adhesive determined to be good by the above-mentioned photocurable adhesive evaluation method on a base material layer. And a step of forming an adhesive layer on the photo-curable pressure-sensitive adhesive layer.
  • the base material layer and the adhesive layer may be the same as those exemplified in the above-mentioned evaluation method for the photocurable pressure-sensitive adhesive.
  • the method for forming the photocurable pressure-sensitive adhesive layer and the method for forming the adhesive layer may be the same as the method exemplified in the above-mentioned evaluation method for the photocurable pressure-sensitive adhesive.
  • the dicing/die-bonding integrated film is a substrate layer, and a photo-curable pressure-sensitive adhesive layer made of a photo-curable pressure-sensitive adhesive that is determined to be good by the above-described photo-curable pressure-sensitive adhesive evaluation method, An adhesive layer is provided in this order.
  • the base material layer and the adhesive layer may be the same as those exemplified in the above-mentioned evaluation method for the photocurable pressure-sensitive adhesive.
  • FIG. 5 and 6 are schematic cross-sectional views for explaining one embodiment of a method for manufacturing a semiconductor device.
  • the semiconductor device manufacturing method according to the present embodiment includes a step (wafer laminating step) of attaching the adhesive layer 30 of the dicing/die-bonding integrated film 1 obtained by the above-described manufacturing method to the semiconductor wafer W2, and a semiconductor wafer W2.
  • a step of dicing the adhesive layer 30 and the photocurable pressure-sensitive adhesive layer 20 into pieces (dicing step), a step of irradiating the photocurable pressure-sensitive adhesive layer 20 with ultraviolet rays (ultraviolet ray irradiation step), and a substrate
  • a step of picking up a semiconductor element (semiconductor element 50 with an adhesive layer) to which the adhesive layer 30a is attached from the layer 10 (pickup step), and mounting the semiconductor element 50 with an adhesive layer on the semiconductor element via the adhesive layer 30a.
  • a step of adhering to the supporting substrate 60 (semiconductor element adhering step).
  • the dicing in the dicing process is not particularly limited, and examples thereof include blade dicing, laser dicing, stealth dicing and the like.
  • the dicing may be stealth dicing.
  • stealth dicing is mainly used as the dicing will be described in detail.
  • the method for manufacturing a semiconductor device may include a modified layer forming step before the wafer laminating step.
  • a semiconductor wafer W1 having a thickness H1 is prepared.
  • the thickness H1 of the semiconductor wafer W1 forming the modified layer may exceed 35 ⁇ m.
  • the protective film 2 is attached to one main surface of the semiconductor wafer W1 (see FIG. 5A).
  • the surface to which the protective film 2 is attached is preferably the circuit surface of the semiconductor wafer W1.
  • the protective film 2 may be a back grinding tape used for back surface grinding (back grinding) of a semiconductor wafer.
  • the modified layer 4 is formed by irradiating the inside of the semiconductor wafer W1 with a laser beam (see FIG. 5B), and the side of the semiconductor wafer W1 opposite to the side to which the protective film 2 is attached (back side).
  • the semiconductor wafer W2 having the modified layer 4 is manufactured by performing back grinding (back surface grinding) and polishing (polishing) on the above (see FIG. 5C).
  • the thickness H2 of the obtained semiconductor wafer W2 may be 35 ⁇ m or less.
  • the adhesive layer 30 of the dicing/die bonding integrated film 1 is placed in a predetermined device. Then, the dicing/die bonding integrated film 1 is attached to the main surface Ws of the semiconductor wafer W2 via the adhesive layer 30 (see FIG. 5D), and the protective film 2 of the semiconductor wafer W2 is peeled off ( See FIG. 5(e).
  • the photocurable adhesive layer 20 is cured by irradiating the photocurable adhesive layer 20 with ultraviolet rays to form a cured product of the photocurable adhesive layer (see FIG. 6G). Thereby, the adhesive force between the photocurable pressure-sensitive adhesive layer 20 and the adhesive layer 30 can be reduced.
  • ultraviolet rays it is preferable to use ultraviolet rays having a wavelength of 200 to 400 nm.
  • the ultraviolet irradiation conditions are preferably adjusted so that the illuminance is 30 to 240 mW/cm 2 and the irradiation amount is 200 to 500 mJ/cm 2 .
  • the base material layer 10 is expanded to separate the diced semiconductor elements 50 with an adhesive layer from each other, while sucking the semiconductor element 50 with an adhesive layer pushed up by the needle 42 from the base material layer 10 side. It is sucked by the collet 44 and picked up from the cured product 20ac of the photocurable pressure-sensitive adhesive layer (see FIG. 6(h)).
  • the semiconductor element 50 with the adhesive layer has the semiconductor element Wa and the adhesive layer 30a.
  • the semiconductor element Wa is obtained by dividing the semiconductor wafer W2 by dicing
  • the adhesive layer 30a is obtained by dividing the adhesive layer 30 by dicing.
  • the cured product 20ac of the photocurable adhesive layer is obtained by dividing the cured product of the photocurable adhesive layer by dicing.
  • the cured product 20ac of the photocurable pressure-sensitive adhesive layer may remain on the base material layer 10 when the semiconductor element 50 with the adhesive layer is picked up. In the pickup process, it is not always necessary to expand, but the expandability can be further improved by expanding.
  • the amount of thrust by the needle 42 can be set appropriately. Further, for example, two-stage or three-stage pickup may be performed from the viewpoint of ensuring a sufficient pickup property even for an extremely thin wafer.
  • the semiconductor element 50 with the adhesive layer may be picked up by a method other than the method using the suction collet 44.
  • the semiconductor element 50 with an adhesive layer is bonded to the semiconductor element mounting support substrate 60 via the adhesive layer 30a by thermocompression bonding (see FIG. 6(i)). ..
  • a plurality of adhesive layer-equipped semiconductor elements 50 may be bonded to the semiconductor element mounting support substrate 60.
  • FIG. 7 is a sectional view schematically showing an embodiment of a semiconductor device.
  • the semiconductor device 100 shown in FIG. 7 includes the above steps, the step of electrically connecting the semiconductor element Wa and the semiconductor element mounting support substrate 60 by wire bonds 70, and the step of electrically connecting the semiconductor element Wa and the semiconductor element mounting support substrate 60 on the surface 60 a of the semiconductor element mounting support substrate 60. And a step of resin-sealing the semiconductor element Wa using the resin sealing material 80.
  • Solder balls 90 may be formed on the surface of the semiconductor element mounting support substrate 60 opposite to the surface 60a for electrical connection with an external substrate (motherboard).
  • the acid value and hydroxyl value of the (meth)acrylic copolymer in the (meth)acrylic copolymer solutions A to E were measured according to JIS K0070. The results are shown in Table 1. Further, the obtained acrylic resin was vacuum dried at 60° C. overnight, and the obtained solid content was subjected to elemental analysis by a fully automatic elemental analyzer varioEL manufactured by Elemental Co., Ltd. The content of methacryloxyethyl isocyanate was calculated. The results are shown in Table 1. Further, using SD-8022/DP-8020/RI-8020 manufactured by Tosoh Corporation as a GPC device, Gelpack GL-A150-S/GL-A160-S manufactured by Hitachi Chemical Co., Ltd. as a column, and tetrahydrofuran as an eluent, The weight average molecular weight (Mw) in terms of polystyrene was measured. The results are shown in Table 1.
  • ⁇ Production Example 1 Preparation of dicing/die bonding integrated film A> (Production of dicing film) 100 parts by mass of the (meth)acrylic copolymer solution A prepared above as a (meth)acrylic copolymer having a reactive functional group as a solid content, 1-hydroxycyclohexyl phenyl ketone (Ciba Specialty Chemicals) as a photopolymerization initiator 0.5 g by weight of Irgacure 184) manufactured by Co., Ltd., and 2 parts by weight of a polyfunctional isocyanate (trade name “Coronate L” manufactured by Nippon Polyurethane Industry Co., Ltd., solid content: 75%) as a cross-linking agent were mixed.
  • a polyfunctional isocyanate trade name “Coronate L” manufactured by Nippon Polyurethane Industry Co., Ltd., solid content: 75%
  • Ethyl acetate was added to this mixture so that the total solid content was 25% by mass, and the mixture was uniformly stirred for 10 minutes to obtain a varnish for forming a photocurable pressure-sensitive adhesive layer.
  • the thickness of the photocurable pressure-sensitive adhesive layer after drying was applied to a polyethylene terephthalate (PET) film having a width of 350 mm, a length of 400 mm, and a thickness of 38 ⁇ m, the one side of which was subjected to mold release treatment. Of 10 ⁇ m was applied while adjusting the gap, and the varnish for forming a photocurable pressure-sensitive adhesive layer was heated and dried at 80 to 100° C. for 3 minutes.
  • PET polyethylene terephthalate
  • a polyolefin film (base material layer, thickness: 90 ⁇ m) that has been subjected to a corona discharge treatment on one side is bonded, cured at 40° C. for 72 hours, and subjected to a crosslinking treatment to form a base material layer.
  • the dicing film provided with the photocurable adhesive layer was obtained.
  • the cross-linking treatment was performed while confirming the progress of curing by using FT-IR spectrum.
  • NUCA-189 manufactured by Nippon Unicar Co., Ltd., trade name, ⁇ - 1.7 parts by mass of mercaptopropyltrimethoxysilane
  • NUCA-1160 manufactured by Nippon Unicar Co., Ltd., trade name, ⁇ -ureidopropyltriethoxysilane
  • Aerosil R972 as a filler (silica surface is dimethyldi).
  • HTR-860P-3 manufactured by Nagase Chemtex Co., Ltd., trade name, acrylic rubber containing a weight-average molecular weight of 800,000, glycidyl acrylate or 3% by mass of glycidyl methacrylate
  • Curezol 2PZ-CN manufactured by Shikoku Kasei Co., Ltd., trade name, 1-cyanoethyl-2-phenylimidazole
  • the obtained varnish for forming an adhesive layer is applied on a polyethylene terephthalate (PET) film which has been subjected to a release treatment so as to have a set thickness, and is heated and dried at 140° C. for 5 minutes to have a B stage state of 10 ⁇ m in thickness.
  • PET polyethylene terephthalate
  • the adhesive layer was formed, and a die bonding film including the adhesive layer was produced.
  • the die bonding film produced above was cut into a size that was easy to handle together with the PET film.
  • the PET film was peeled off and the photocurable pressure-sensitive adhesive layer of the dicing film was bonded to the adhesive layer of the cut die bonding film immediately before bonding.
  • the bonding was performed in a clean room (23° C., 50% humidity-free room) using a laminating machine without heating the roll (that is, 23° C.).
  • the dicing/die-bonding integrated film A was obtained by storing the film in a refrigerator at 4° C. for 1 day.
  • ⁇ Production Example 7 Production of dicing/die-bonding integrated film G> Dicing/die-bonding integrated film in the same manner as in Production Example 1 except that the (meth)acrylic copolymer solution was changed from A to D and the content of the crosslinking agent was changed from 8 parts by mass to 6 parts by mass. Got G.
  • ⁇ Manufacturing Example 12 Preparation of dicing/die-bonding integrated film L>
  • the PET film of the dicing film was peeled off in a clean room (temperature 23°C, humidity 50% in a dust-free room), and the photocurable pressure-sensitive adhesive layer was exposed to air and left for 1 day or more.
  • a dicing/die-bonding integrated film L was obtained in the same manner as in Production Example 1 except that the above was attached to the adhesive layer of the die-bonding film.
  • the dicing/die-bonding integrated films A to M are each cut into a width of 30 mm and a length of 200 mm, the PET film on the adhesive layer side of the die bonding film is peeled off, and a supporting film (EC tape manufactured by Oji Tuck Co., Ltd.) is used as an adhesive. It stuck on the layer side using a roller and cut out to width 25 mm and length 170 mm.
  • a supporting film EC tape manufactured by Oji Tuck Co., Ltd.
  • the dicing/die-bonding integrated film was the same as the one used in the measurement of the peeling force, and the one in which the peeling force was not measured was used.
  • the dicing/die bonding integrated films A to M were cut into a width of 30 mm and a length of 50 mm or more.
  • a heater was brought into contact with the base material layer (polyolefin film) of the dicing/die-bonding integrated film to heat the photocurable pressure-sensitive adhesive layer at 65° C. for 15 minutes, and then air-cooled to 25 ⁇ 5° C.
  • the PET film on the adhesive layer side of the die bonding film was peeled off, a supporting film (EC tape manufactured by Oji Tuck Co., Ltd.) was attached, and the width was cut to 25 mm. Then, from the base material layer (polyolefin film) side of the dicing die-bonding integrated film with a supporting film after heating and cooling, an ultraviolet irradiation device (GS Yuasa Co., Ltd., UV SYSTEM, central wavelength 365 nm ultraviolet light) is used. , irradiation temperature 40 ° C.
  • the support film is pulled, the adhesive layer and the cured product of the photocurable pressure-sensitive adhesive layer are peeled off, and the base material layer comprising the cured product of the photocurable pressure-sensitive adhesive layer after the adhesive layer is peeled off is recovered, A measurement sample was obtained by cutting into a size of 5 mm ⁇ 5 mm.
  • the dynamic force mode (DFM) is observed, and at the same time, the data of the phase image is acquired, and in the phase image, the part where the hardness is obviously different from the surroundings is threaded. It was a tow mark. In the observation of the measurement sample, it was confirmed whether or not there was a 25 ⁇ m ⁇ 25 ⁇ m region (specific region) in which the number of traces of the string-plucking marks was 15 or more on the surface to be observed.
  • the width of the thread-plucking marks existing in the specific area The median value of was calculated.
  • the trace width of the stringing trace was determined as follows. First, using a scanning probe microscope, the shape image profile and the phase image profile of the surface of the cured product of the photocurable pressure-sensitive adhesive layer including the portion where the hardness is clearly different from the surroundings in the phase image were acquired.
  • the width of each thread pulling trace is The maximum cross-sectional profile of the cross-sectional line was output, and the trace width of the string-plucking trace was determined based on the above criteria.
  • the thread-plucking marks are shown in the lightest color (for example, white in the case of a black-and-white image), but the number of places where the hardness is obviously different from the surroundings in the phase image is the shape image. The number was the same as the number of places indicated by the lightest color in the profile. The results are shown in Tables 2, 3, and 4.
  • ⁇ Preparation of evaluation sample> (Formation of modified layer) A back grinding tape was attached to one surface of a semiconductor wafer (silicon wafer (thickness 750 ⁇ m, outer diameter 12 inches)) to obtain a semiconductor wafer with a back grinding tape. The surface of the semiconductor wafer opposite to the side to which the back grinding tape was attached was irradiated with laser light to form a modified layer inside the semiconductor wafer.
  • the laser irradiation conditions are as follows.
  • Laser oscillator model Semiconductor laser pumped Q-switch solid-state laser Wavelength: 1342 nm Oscillation form: pulse Frequency: 90 kHz Output: 1.7W Moving speed of semiconductor wafer mounting table: 700 mm/sec
  • the PET film of the dicing/die bonding integrated film was peeled off from the surface of the semiconductor wafer opposite to the side to which the back grinding tape was stuck, and the adhesive layer was stuck.
  • the dicing/die-bonding integrated film-equipped semiconductor wafer having the modified layer was fixed to an expanding device.
  • the dicing film was expanded under the following conditions to separate the semiconductor wafer, the adhesive layer, and the photocurable pressure-sensitive adhesive layer into individual pieces.
  • Cool expanding conditions Temperature: -15°C, Height: 9 mm, Cooling time: 90 seconds, Speed: 300 mm/second, Standby time: 0 seconds
  • Heat shrink condition Temperature: 220°C, height: 7 mm, holding time: 15 seconds, speed: 30 mm/sec, heater speed: 7°C/sec
  • UV irradiation The center wavelength of 365nm ultraviolet irradiation with a light-curable pressure-sensitive adhesive layer of the singulated semiconductor wafer irradiation intensity 70 mW / cm 2 and cumulative light quantity 150 mJ / cm 2, to form a cured product of the photocurable pressure-sensitive adhesive layer As a result, a sample for evaluation of pickup property described later was obtained.
  • a die bonder DB-830P manufactured by Fasford Technology Co., Ltd. (former Hitachi High-Technologies Corporation) was used to perform a pick-up test with 9 pins.
  • the pick-up collet was a RUBBER TIP 13-087E-33 (micro).
  • the push-up pin was EJECTOR NEEDLE SEN2-83-05 (manufactured by Micromechanics company, product name, diameter: 0.7 mm, tip shape: diameter 350 ⁇ m)
  • the semi-circle was used.
  • the thrust pins were arranged at equal intervals from the center of the pin.
  • the high-speed camera MEMRECM GX-1Plus manufactured by NAC Image Technology Co., Ltd., trade name
  • the time until complete peeling was evaluated as the peeling time.
  • Pickup was performed by pushing up to 300 ⁇ m at 1 mm/sec.
  • the frame rate was 1000 frames/second.
  • the peeling time of 60 msec or less was evaluated as "A”
  • the peeling time of more than 60 msec and less than 90 msec was evaluated as "B”
  • the peel time of more than 90 msec was evaluated as "C”.
  • the results are shown in Tables 2, 3, and 4.
  • the dicing/die-bonding integrated films A to E of Production Examples 1 to 5 have a peeling force of 0.70 N/25 mm or less, and the adhesive layer peels off.
  • the surface of the cured product of the photocurable pressure-sensitive adhesive layer after being treated has a region of 25 ⁇ m ⁇ 25 ⁇ m in which the number of traces of the thread-plucking marks is 15 or more, and the median value of the width of the traces of the thread-plucking marks in the area is 120 to It was 200 nm, and both the condition (a) and the condition (b) were satisfied. It was found that the dicing/die-bonding integrated films A to E of Production Examples 1 to 5 were excellent in evaluation of pickup property.
  • SYMBOLS 1 Dicing/die-bonding integrated film, 2... Protective film, 4... Modification layer, 10... Base material layer, 20... Photocurable adhesive layer, 20ac... Cured product of photocurable adhesive layer, 30, 30a... Adhesive layer, 42... Needle, 44... Suction collet, 50... Adhesive layer-equipped semiconductor element, 60... Support substrate for mounting semiconductor element, 70... Wire bond, 80... Resin encapsulant, 90... Solder ball, W1, W2... Semiconductor wafer, H1... Thickness of semiconductor wafer W1, H2... Thickness of semiconductor wafer W2, 100... Semiconductor device.

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PCT/JP2018/048581 2018-12-28 2018-12-28 光硬化性粘着剤の評価方法、ダイシング・ダイボンディング一体型フィルム及びその製造方法、並びに半導体装置の製造方法 WO2020136901A1 (ja)

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JP2020562295A JP7099547B2 (ja) 2018-12-28 2018-12-28 光硬化性粘着剤の評価方法、ダイシング・ダイボンディング一体型フィルム及びその製造方法、並びに半導体装置の製造方法
CN201880100421.8A CN113228237A (zh) 2018-12-28 2018-12-28 光固化性压敏胶黏剂的评价方法、切割晶粒接合一体型膜及其制造方法以及半导体装置的制造方法
KR1020217021116A KR102699401B1 (ko) 2018-12-28 2018-12-28 광경화성 점착제의 평가 방법, 다이싱·다이본딩 일체형 필름과 그 제조 방법, 및 반도체 장치의 제조 방법
SG11202106221PA SG11202106221PA (en) 2018-12-28 2018-12-28 Method for evaluating photocurable adhesive, dicing/die attach film, method for manufacturing same, and method for manufacturing semiconductor device
TW108147291A TWI816004B (zh) 2018-12-28 2019-12-24 光硬化性黏著劑的評價方法、切割-黏晶一體型膜及其製造方法、以及半導體裝置的製造方法

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