WO2020121989A1 - Structure, dispositif de mesure optique, procédé de production de structure et composition - Google Patents

Structure, dispositif de mesure optique, procédé de production de structure et composition Download PDF

Info

Publication number
WO2020121989A1
WO2020121989A1 PCT/JP2019/047993 JP2019047993W WO2020121989A1 WO 2020121989 A1 WO2020121989 A1 WO 2020121989A1 JP 2019047993 W JP2019047993 W JP 2019047993W WO 2020121989 A1 WO2020121989 A1 WO 2020121989A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
light receiving
substrate
measurement
structure according
Prior art date
Application number
PCT/JP2019/047993
Other languages
English (en)
Japanese (ja)
Inventor
齋江　俊之
嶋田　和人
Original Assignee
富士フイルム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士フイルム株式会社 filed Critical 富士フイルム株式会社
Priority to JP2020560088A priority Critical patent/JP7170063B2/ja
Priority to KR1020217017785A priority patent/KR102645482B1/ko
Publication of WO2020121989A1 publication Critical patent/WO2020121989A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Definitions

  • the surface roughness Ra of the antireflection member is 50 to 500 nm
  • the average thickness of the entire antireflection member is an integral multiple of a half wavelength of the maximum peak wavelength of the measurement light, The structure according to any one of ⁇ 6> to ⁇ 8>.
  • An antireflection member is provided between the second light receiving portion and the light transmitting member, The structure according to any one of ⁇ 6> to ⁇ 9>.
  • the light-shielding portion has a filling member that is in contact with the transparent member and fills the space between the substrate and the transparent member.
  • the term “exposure” as used herein means not only drawing using light but also drawing using particle beams such as electron beams and ion beams.
  • particle beams such as electron beams and ion beams.
  • the energy rays used for the exposure generally, a bright line spectrum of a mercury lamp, active rays such as deep ultraviolet rays represented by excimer laser, extreme ultraviolet rays (EUV light) and X-rays, and electron rays and ion rays are used.
  • Particle beam such as.
  • the solid content in the composition means other components excluding the solvent, and the concentration of the solid content in the composition is the mass percentage of the other components excluding the solvent with respect to the total mass of the composition.
  • the polydispersity of the molecular weight of the polyimide precursor is preferably 1.5 to 3.5, more preferably 2 to 3.
  • the second light receiving portion 32 suppresses the reception of the noise light L3 and the ambient light while securing a sufficient light receiving amount of the reference light L4. be able to.
  • the material forming the high refractive index material layer is, for example, an oxide containing at least one kind of an inorganic element (for example, Si, Ti, Zn, Zr, La, Y, In, Sn, Nb, Ta, Sb and Al). It is preferable that they are a substance, an oxynitride and a nitride. And, the material constituting the high refractive index material layer is, in particular, titanium oxide, zinc oxide, zirconium oxide, lanthanum oxide, yttrium oxide, indium oxide, niobium oxide, oxides such as antimony oxide and tin oxide, and silicon nitride.
  • an inorganic element for example, Si, Ti, Zn, Zr, La, Y, In, Sn, Nb, Ta, Sb and Al. It is preferable that they are a substance, an oxynitride and a nitride.
  • the material constituting the high refractive index material layer is, in particular,
  • the structure 15 has the same antireflection film as the second antireflection member 55 on the object-side surface of the translucent member 7. Thereby, the reflection of the measurement light on the surface of the transparent member 7 on the object side can be suppressed, and the generation of the noise signal can be suppressed, and the measurement accuracy can be further improved. Also in the structure 15, the light absorbing member 50 may have a predetermined surface roughness.
  • the water content of the obtained reaction liquid was measured and found to be 135 mass ppm.
  • the reaction was then cooled to -10°C and 17.0g of SOCl 2 was added over 60 minutes keeping the temperature at -10°C. Then, it was diluted with 50 mL of N-methylpyrrolidone, and then a solution of 25.1 g of 4,4′-diaminodiphenyl ether dissolved in 100 mL of N-methylpyrrolidone was reacted at ⁇ 10° C. for 60 minutes. The reaction solution was stirred for 2 hours while adding dropwise to the solution. Then, 20 mL of ethyl alcohol was added to the reaction solution.
  • the photosensitive resin composition according to Example 3 was applied onto a packaging cover glass by a spin coating method.
  • the cover glass coated with the photosensitive resin composition layer was dried on a hot plate at 100° C. for 5 minutes to form a uniform resin layer having a thickness of 10.2 ⁇ m on the cover glass.
  • the surface roughness Ra of this layer was 3 nm.
  • the resin layer on the cover glass is exposed with a stepper (Nikon NSR 2005 i9C) at an exposure energy of 500 mJ/cm 2 to form a cured resin layer, and cyclopentanone (ClogP is 0.31). And then developed for 60 seconds to form two 1 mm square holes at positions facing the holes on the optical measurement device.
  • the cured resin layer remaining in the region between the light emitting element and the first PD corresponds to the light absorbing member (second light absorbing member) in the present invention.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Measurement Of Optical Distance (AREA)
  • Optical Radar Systems And Details Thereof (AREA)

Abstract

La présente invention concerne une structure comprenant : une unité émettrice de lumière qui est formée sur une surface d'une plaque de base et qui émet une lumière de mesure; une première unité de réception de lumière qui est formée sur la surface et qui reçoit une lumière réfléchie de la lumière de mesure depuis un objet cible; une seconde unité de réception de lumière qui est située sur la surface de façon à être plus proche de l'unité d'émission de lumière que la première unité de réception de lumière et qui reçoit une partie de la lumière de mesure en tant que lumière de référence; un élément de transmission de lumière qui est disposé au-dessus de la plaque de base de telle sorte que l'unité d'émission de lumière, la première unité de réception de lumière et la seconde unité de réception de lumière sont entre celui-ci et qui permet à la lumière de mesure de passer à travers celui-ci; et une partie de blocage de lumière servant à réduire un bruit lumineux provenant de la lumière de mesure circulant à travers la plaque de base et l'élément de transmission de lumière et arrivant sur la première unité de réception de lumière. La présente invention concerne en outre un dispositif de mesure optique comprenant la structure ci-dessus, un procédé de production de la structure et une composition utilisée lors de la production de la structure.
PCT/JP2019/047993 2018-12-14 2019-12-09 Structure, dispositif de mesure optique, procédé de production de structure et composition WO2020121989A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020560088A JP7170063B2 (ja) 2018-12-14 2019-12-09 構造体、光学式計測装置、構造体の製造方法、および組成物
KR1020217017785A KR102645482B1 (ko) 2018-12-14 2019-12-09 구조체, 광학식 계측 장치, 구조체의 제조 방법, 및 조성물

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-234863 2018-12-14
JP2018234863 2018-12-14

Publications (1)

Publication Number Publication Date
WO2020121989A1 true WO2020121989A1 (fr) 2020-06-18

Family

ID=71075594

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/047993 WO2020121989A1 (fr) 2018-12-14 2019-12-09 Structure, dispositif de mesure optique, procédé de production de structure et composition

Country Status (4)

Country Link
JP (1) JP7170063B2 (fr)
KR (1) KR102645482B1 (fr)
TW (1) TWI831891B (fr)
WO (1) WO2020121989A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210378533A1 (en) * 2020-06-05 2021-12-09 Samsung Electronics Co., Ltd. Biosensor and biosensor array and device
CN113809109A (zh) * 2021-03-18 2021-12-17 神盾股份有限公司 光感测阵列模块与光收发装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202022103747U1 (de) 2021-07-12 2022-10-17 Hyundai Mobis Co., Ltd. Led Module
WO2023191358A1 (fr) * 2022-03-29 2023-10-05 삼성전자 주식회사 Structure de blindage pour réduire la diaphonie d'un capteur optique et son procédé de fabrication

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011064851A (ja) * 2009-09-16 2011-03-31 Seiko Epson Corp 反射スクリーン
CN206223977U (zh) * 2016-10-08 2017-06-06 深圳市金立通信设备有限公司 激光测距装置、摄像装置以及终端
WO2017094279A1 (fr) * 2015-12-01 2017-06-08 シャープ株式会社 Photodétecteur et dispositif électronique le comportant
WO2018199132A1 (fr) * 2017-04-27 2018-11-01 京セラ株式会社 Module d'élément de réception/émission de lumière et dispositif de detection

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4260852B2 (ja) 2006-05-24 2009-04-30 シャープ株式会社 光学式測距装置およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011064851A (ja) * 2009-09-16 2011-03-31 Seiko Epson Corp 反射スクリーン
WO2017094279A1 (fr) * 2015-12-01 2017-06-08 シャープ株式会社 Photodétecteur et dispositif électronique le comportant
CN206223977U (zh) * 2016-10-08 2017-06-06 深圳市金立通信设备有限公司 激光测距装置、摄像装置以及终端
WO2018199132A1 (fr) * 2017-04-27 2018-11-01 京セラ株式会社 Module d'élément de réception/émission de lumière et dispositif de detection

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210378533A1 (en) * 2020-06-05 2021-12-09 Samsung Electronics Co., Ltd. Biosensor and biosensor array and device
US11986276B2 (en) * 2020-06-05 2024-05-21 Samsung Electronics Co., Ltd. Biosensor and biosensor array and device
CN113809109A (zh) * 2021-03-18 2021-12-17 神盾股份有限公司 光感测阵列模块与光收发装置

Also Published As

Publication number Publication date
KR20210091237A (ko) 2021-07-21
JPWO2020121989A1 (ja) 2021-10-21
TWI831891B (zh) 2024-02-11
TW202035584A (zh) 2020-10-01
KR102645482B1 (ko) 2024-03-08
JP7170063B2 (ja) 2022-11-11

Similar Documents

Publication Publication Date Title
WO2020121989A1 (fr) Structure, dispositif de mesure optique, procédé de production de structure et composition
US7777172B2 (en) Methods for reducing cross talk in optical sensors
KR101852804B1 (ko) 적외선 센서, 근적외선 흡수 조성물, 감광성 수지 조성물, 화합물, 근적외선 흡수 필터 및 촬상 장치
JP6631243B2 (ja) 固体撮像装置及び光学フィルタ
WO2014030628A1 (fr) Filtre coupant dans l'infrarouge proche et dispositif d'imagerie à semi-conducteurs
JP6650040B2 (ja) 近赤外線カットフィルタ、固体撮像素子、カメラモジュールおよび画像表示装置
KR20160112991A (ko) 경화성 조성물, 경화막, 적외광 투과 필터 및 고체 촬상 장치
KR20170101893A (ko) 고체 촬상 장치, 적외선 흡수성 조성물 및 평탄화막 형성용 경화성 조성물
KR20170101894A (ko) 고체 촬상 장치 및 적외선 흡수성 조성물
JP2016162946A (ja) 固体撮像装置
JPWO2017104735A1 (ja) 近赤外線吸収組成物、近赤外線カットフィルタ、近赤外線カットフィルタの製造方法、固体撮像素子、カメラモジュールおよび画像表示装置
KR102420769B1 (ko) 경화성 조성물, 경화막, 적외선 투과 필터, 적층체, 고체 촬상 소자, 센서, 및 패턴 형성 방법
WO2016088644A1 (fr) Dispositif d'imagerie à semi-conducteurs
KR20170099845A (ko) 적외선 차폐성 조성물, 경화막 및 고체 촬상 장치
TW202113424A (zh) 光學構件及相機模組
WO2019039386A1 (fr) Filtre optique et capteur optique
WO2016181786A1 (fr) Dispositif à capteur optique, dispositif électronique comprenant un dispositif à capteur optique, composition d'absorption d'infrarouges, et procédé pour produire une couche de filtre de coupure d'infrarouge
CN115244625A (zh) 闪烁体面板和闪烁体面板的制造方法
KR20200062280A (ko) 장치, 유기층 형성용 조성물
CN110741288A (zh) 固体摄像装置
CN114585693A (zh) 分散液、组合物、固化膜、滤色器、光学元件、固体成像元件及前照灯单元
KR20190008327A (ko) 조성물, 경화막, 적외선 투과 필터, 고체 촬상 소자 및 적외선 센서
KR102581901B1 (ko) 근적외선 흡수 조성물, 근적외선 흡수 필름, 및 이를 포함하는 카메라 모듈 및 전자 장치
KR20200134243A (ko) 광학 필터 및 그의 용도
TWI813759B (zh) 光學濾波器

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19896816

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2020560088

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20217017785

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19896816

Country of ref document: EP

Kind code of ref document: A1