WO2016088644A1 - Dispositif d'imagerie à semi-conducteurs - Google Patents
Dispositif d'imagerie à semi-conducteurs Download PDFInfo
- Publication number
- WO2016088644A1 WO2016088644A1 PCT/JP2015/083239 JP2015083239W WO2016088644A1 WO 2016088644 A1 WO2016088644 A1 WO 2016088644A1 JP 2015083239 W JP2015083239 W JP 2015083239W WO 2016088644 A1 WO2016088644 A1 WO 2016088644A1
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- WIPO (PCT)
- Prior art keywords
- optical layer
- wavelength
- compound
- solid
- imaging device
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- -1 cyanine compound Chemical class 0.000 claims description 21
- 238000010521 absorption reaction Methods 0.000 claims description 20
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- 229910052751 metal Inorganic materials 0.000 claims description 9
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
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- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
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- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
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- 239000003643 water by type Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/33—Transforming infrared radiation
Abstract
La présente invention aborde le problème de la fourniture d'un dispositif d'imagerie à semi-conducteurs qui minimise les coûts de production et qui présente une haute précision de détection. Un dispositif d'imagerie à semi-conducteurs est pourvu : d'une première couche optique qui transmet la lumière visible et au moins une partie de la lumière proche infrarouge; une seconde couche optique qui absorbe au moins une partie de la lumière proche infrarouge; et une matrice de pixels comprenant un premier élément de réception de lumière qui détecte la lumière visible transmise par les première et deuxième couches optiques et un second élément de réception de lumière qui détecte la lumière proche infrarouge transmise par la première couche optique. La seconde couche optique comprend une ouverture dans une partie de celle-ci correspondant au second élément de réception de lumière. Lorsque la bande de longueur d'onde de la longueur d'onde la plus courte (X1) ayant une transmittance de 30 % ou plus à la longueur d'onde la plus longue (X2) ayant une transmittance de 30 % ou moins parmi les longueurs d'onde dans une plage prédéfinie à l'intérieur de la lumière proche infrarouge dans la première couche optique telle que mesurée dans la direction verticale est désignée par X, le produit de la transmittance moyenne dans la direction verticale dans la bande de longueur d'onde (X) dans la première couche optique et la transmittance moyenne dans la direction verticale dans la bande de longueur d'onde (X) dans la deuxième couche optique est de 70 % ou moins.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016562404A JP6669079B2 (ja) | 2014-12-04 | 2015-11-26 | 固体撮像装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014245884 | 2014-12-04 | ||
| JP2014-245884 | 2014-12-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2016088644A1 true WO2016088644A1 (fr) | 2016-06-09 |
Family
ID=56091590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2015/083239 WO2016088644A1 (fr) | 2014-12-04 | 2015-11-26 | Dispositif d'imagerie à semi-conducteurs |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6669079B2 (fr) |
| TW (1) | TW201622125A (fr) |
| WO (1) | WO2016088644A1 (fr) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016109809A (ja) * | 2014-12-04 | 2016-06-20 | 旭硝子株式会社 | 光学フィルタ |
| JP2018025732A (ja) * | 2016-07-27 | 2018-02-15 | 京セラ株式会社 | 光学フィルタ部材および撮像装置 |
| WO2018135208A1 (fr) * | 2017-01-18 | 2018-07-26 | ソニーセミコンダクタソリューションズ株式会社 | Dispositif d'imagerie et système d'imagerie |
| KR20190091322A (ko) * | 2016-12-07 | 2019-08-05 | 소시에떼 프랑세즈 뒤 드테끄퇴르 인프라루즈 소프라디르 | 개선된 다중 스펙트럼 검출을 위한 디바이스 |
| KR20200103069A (ko) | 2018-03-16 | 2020-09-01 | 후지필름 가부시키가이샤 | 구조체, 근적외선 차단 필터용 조성물, 드라이 필름, 구조체의 제조 방법, 광센서 및 화상 표시 장치 |
| US11982939B2 (en) | 2018-03-16 | 2024-05-14 | Fujifilm Corporation | Composition, film, dry film, pattern forming method, near-infrared transmitting filter, structure, optical sensor, and image display device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08139982A (ja) * | 1994-11-11 | 1996-05-31 | Sanyo Electric Co Ltd | 固体撮像装置 |
| JP2000212546A (ja) * | 1998-11-17 | 2000-08-02 | Nisshinbo Ind Inc | 近赤外吸収組成物 |
| JP2003324751A (ja) * | 2002-05-07 | 2003-11-14 | Toshiba Corp | 情報入力装置 |
| JP2011101006A (ja) * | 2009-11-04 | 2011-05-19 | Samsung Electronics Co Ltd | 映像センサ及びその製造方法 |
| JP2012185468A (ja) * | 2010-12-17 | 2012-09-27 | Nippon Shokubai Co Ltd | 光選択透過フィルター、樹脂シート及び固体撮像素子 |
| JP2014103657A (ja) * | 2012-11-20 | 2014-06-05 | Visera Technologies Company Ltd | イメージセンシング装置 |
| WO2015056734A1 (fr) * | 2013-10-17 | 2015-04-23 | Jsr株式会社 | Filtre optique, dispositif à semi-conducteurs de capture d'image et module de caméra |
-
2015
- 2015-11-26 WO PCT/JP2015/083239 patent/WO2016088644A1/fr active Application Filing
- 2015-11-26 JP JP2016562404A patent/JP6669079B2/ja active Active
- 2015-12-03 TW TW104140423A patent/TW201622125A/zh unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08139982A (ja) * | 1994-11-11 | 1996-05-31 | Sanyo Electric Co Ltd | 固体撮像装置 |
| JP2000212546A (ja) * | 1998-11-17 | 2000-08-02 | Nisshinbo Ind Inc | 近赤外吸収組成物 |
| JP2003324751A (ja) * | 2002-05-07 | 2003-11-14 | Toshiba Corp | 情報入力装置 |
| JP2011101006A (ja) * | 2009-11-04 | 2011-05-19 | Samsung Electronics Co Ltd | 映像センサ及びその製造方法 |
| JP2012185468A (ja) * | 2010-12-17 | 2012-09-27 | Nippon Shokubai Co Ltd | 光選択透過フィルター、樹脂シート及び固体撮像素子 |
| JP2014103657A (ja) * | 2012-11-20 | 2014-06-05 | Visera Technologies Company Ltd | イメージセンシング装置 |
| WO2015056734A1 (fr) * | 2013-10-17 | 2015-04-23 | Jsr株式会社 | Filtre optique, dispositif à semi-conducteurs de capture d'image et module de caméra |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016109809A (ja) * | 2014-12-04 | 2016-06-20 | 旭硝子株式会社 | 光学フィルタ |
| JP2018025732A (ja) * | 2016-07-27 | 2018-02-15 | 京セラ株式会社 | 光学フィルタ部材および撮像装置 |
| KR20190091322A (ko) * | 2016-12-07 | 2019-08-05 | 소시에떼 프랑세즈 뒤 드테끄퇴르 인프라루즈 소프라디르 | 개선된 다중 스펙트럼 검출을 위한 디바이스 |
| CN110235252A (zh) * | 2016-12-07 | 2019-09-13 | 兴业法兰西红外探测器-索弗拉迪尔公司 | 用于改进多光谱检测的装置 |
| JP2020501152A (ja) * | 2016-12-07 | 2020-01-16 | ソシエテ、フランセーズ、ド、デテクトゥル、ザンフラルージュ、ソフラディルＳｏｃｉｅｔｅ Ｆｒａｎｃａｉｓｅ Ｄｅ Ｄｅｔｅｃｔｅｕｒｓ Ｉｎｆｒａｒｏｕｇｅｓ Ｓｏｆｒａｄｉｒ | 改善されたマルチスペクトル検出のための装置 |
| JP7161267B2 (ja) | 2016-12-07 | 2022-10-26 | リンレッド | 改善されたマルチスペクトル検出のための装置 |
| KR102470061B1 (ko) * | 2016-12-07 | 2022-11-22 | 린레드 | 개선된 다중 스펙트럼 검출을 위한 디바이스 |
| CN110235252B (zh) * | 2016-12-07 | 2023-08-22 | 灵锐得 | 用于改进多光谱检测的装置 |
| WO2018135208A1 (fr) * | 2017-01-18 | 2018-07-26 | ソニーセミコンダクタソリューションズ株式会社 | Dispositif d'imagerie et système d'imagerie |
| KR20200103069A (ko) | 2018-03-16 | 2020-09-01 | 후지필름 가부시키가이샤 | 구조체, 근적외선 차단 필터용 조성물, 드라이 필름, 구조체의 제조 방법, 광센서 및 화상 표시 장치 |
| US11982939B2 (en) | 2018-03-16 | 2024-05-14 | Fujifilm Corporation | Composition, film, dry film, pattern forming method, near-infrared transmitting filter, structure, optical sensor, and image display device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201622125A (zh) | 2016-06-16 |
| JPWO2016088644A1 (ja) | 2017-11-02 |
| JP6669079B2 (ja) | 2020-03-18 |
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