WO2020085148A1 - Corps cru en céramique - Google Patents

Corps cru en céramique Download PDF

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Publication number
WO2020085148A1
WO2020085148A1 PCT/JP2019/040478 JP2019040478W WO2020085148A1 WO 2020085148 A1 WO2020085148 A1 WO 2020085148A1 JP 2019040478 W JP2019040478 W JP 2019040478W WO 2020085148 A1 WO2020085148 A1 WO 2020085148A1
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Prior art keywords
mass
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ceramic
content
ceramic base
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PCT/JP2019/040478
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English (en)
Japanese (ja)
Inventor
浩 河野
孝友 緒方
間瀬　淳
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日本碍子株式会社
Ｎｇｋエレクトロデバイス株式会社
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Application filed by 日本碍子株式会社, Ｎｇｋエレクトロデバイス株式会社 filed Critical 日本碍子株式会社
Priority to CN201980048264.5A priority Critical patent/CN112601727A/zh
Priority to JP2020553197A priority patent/JP7108704B2/ja
Priority to CN202310527850.6A priority patent/CN116715512A/zh
Publication of WO2020085148A1 publication Critical patent/WO2020085148A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111—Fine ceramics
    • C04B35/117—Composites
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3241—Chromium oxides, chromates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/404—Refractory metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass

Definitions

  • the present invention relates to a ceramic substrate.
  • Patent Document 1 as an example of a ceramic base, 90% by mass or more of Al 2 O 3 , 1 to 6% by mass of SiO 2, and 2 to 8% by mass of MnAl 2 O 4 in terms of Mn 2 O 3 are included.
  • An insulating substrate containing 2 mass% or less of Mo is disclosed. It is said that the insulating substrate described in Patent Document 1 preferably contains Mg in a proportion of 0.1 to 3 mass% in terms of oxide in order to improve the stability of strength.
  • Patent Document 2 as an example of a ceramic substrate, Al 2 O 3 as a main component, 3 to 7.5 mass% SiO 2 , 2 to 5 mass% Mn in terms of Mn 2 O 3 , and MgO.
  • An insulating substrate containing 0.3 to 0.7 mass% of Mg in terms of conversion and 0.3 to 0.7 mass% of Mo in terms of MoO is disclosed.
  • Patent Document 3 Al is 89.0 to 92.0 mass% in terms of Al 2 O 3 , Si is 2.0 to 5.0 mass% in terms of SiO 2 , and Mn is 2.0 to 5 in terms of MnO. Disclosed is a ceramic base containing 0.0 mass% of Mg, 0 to 2.0 mass% of Mg in terms of MgO, and 0.05 to 2.0 mass% of Zr in terms of ZrO 2 .
  • Patent Documents 1 to 3 have a problem that dimensional variations easily occur.
  • the present inventors have made a balance except for Al 2 O 3 as a main component, SiO 2 and MnO as a sintering aid, and Mo or / and Cr 2 O 3 as a colorant.
  • a new finding was obtained that the content of P has an influence on dimensional variation.
  • the present invention aims to provide a ceramic base capable of suppressing dimensional variations.
  • the ceramic substrate according to the present invention contains Al 2 O 3 , SiO 2 and MnO as essential components, and contains at least one of Mo and Cr 2 O 3 as optional components.
  • the content of Al 2 O 3 is 82.0% by mass or more and 95.0% by mass or less
  • the content of SiO 2 is 3.0% by mass or more and 8.0% by mass or less
  • the content of MnO is 2.0% by mass or more and 6.0% by mass or less
  • the sum of the content of Mo in terms of MoO 3 and the content of Cr 2 O 3 is 4.0% by mass or less. Yes, and the content of the balance is less than 0.1% by mass.
  • the ceramic base is a composition obtained by sintering a green sheet formed by molding a ceramic material powder into a tape shape or a compact formed by compacting a ceramic material powder.
  • the ceramic substrate according to the present embodiment includes a ceramic package for encapsulating an oscillator such as a crystal oscillator, a ceramic package for encapsulating a semiconductor element such as a CMOS image sensor, or a ceramic package for encapsulating an optical semiconductor element. Suitable for use in various ceramic packages.
  • the ceramic body according to the present embodiment contains Al 2 O 3 (alumina) as a main component, and SiO 2 (silica) and MnO (manganese oxide) as sintering aids as essential components.
  • the ceramic base contains at least one of Mo (molybdenum) and Cr 2 O 3 (chromium oxide) as an optional component as a colorant.
  • the ceramic base may contain only Mo as a colorant, may contain only Cr 2 O 3 , or may contain both Mo and Cr 2 O 3 , Furthermore, it may not contain both Mo and Cr 2 O 3.
  • Mo molecular weight
  • Cr 2 O 3 chromium oxide
  • the ceramic base may contain Mo as a colorant, at least a part of Mo may be present as a metal, or at least a part of Mo may be present in an oxide form (for example, MoO 3 ). Good.
  • the content of each component that constitutes the ceramic base is as follows.
  • ⁇ Al 2 O 3 82.0 mass% or more and 95.0 mass% or less ⁇ SiO 2 : 3.0 mass% or more and 8.0 mass% or less ⁇ MnO: Sum of the amount of content and Cr 2 O 3 of Mo in 2.0% to 6.0% by mass ⁇ MoO 3 terms: 4.0 mass% or less-The balance: Less than 0.1% by mass
  • the content of the balance other than Al 2 O 3 , SiO 2 , MnO and the colorant (Mo or / and Cr 2 O 3 ) is suppressed to less than 0.1% by mass. Therefore, each component is uniformly sintered in a dispersed state without segregation. Therefore, in the ceramic base material according to the present embodiment, dimensional variation is suppressed.
  • the content of the balance of the ceramic base is suppressed to less than 0.1% by mass, the respective components are uniformly sintered in a dispersed state without segregation. It is possible to suppress local generation of the melting point region. Therefore, it is possible to prevent the ceramic base material from sticking to the firing setter.
  • the respective components are uniformly sintered in a dispersed state without segregation, so that in the backside region on the firing setter side.
  • the timing at which the glass component melts can be matched with the timing at which the glass component melts in the front side region opposite to the firing setter. Therefore, it is possible to suppress the ceramic base from warping in the thickness direction.
  • the content of the balance in the ceramic base is more preferably less than 0.05% by mass. As a result, the dimensional variation of the ceramic base can be further suppressed.
  • the content of the balance in the ceramic body is particularly preferably 0% by mass. As a result, it is possible not only to further suppress the dimensional variation of the ceramic base material, but also to further suppress the sticking of the ceramic base material to the firing setter.
  • the ratio of the content of SiO 2 to the content of MnO is not particularly limited, but it is preferably 0.8 or more and 3.5 or less. Within this range, the precipitation of Mn 3 Al 2 Si 3 O 12 in the ceramic matrix can be suppressed, so that the occurrence of color unevenness due to the precipitation of Mn 3 Al 2 Si 3 O 12 can be reduced. . Furthermore, when the ceramic base is applied to a ceramic package that seals a vibrator or a semiconductor element, the ratio of the content of SiO 2 to the content of MnO is particularly preferably 0.8 or more and 2.1 or less. Thereby, the bending strength of the ceramic base can be particularly improved.
  • the ratio of the content of SiO2 to the content of MnO is particularly preferably 1.9 or more and 3.5 or less.
  • the ceramic matrix contains a crystalline phase and a glass phase.
  • the crystal phase includes an Al 2 O 3 crystal phase as a main crystal phase and a Mo crystal phase as a sub crystal phase.
  • the crystal phase may include a crystal phase other than the Al 2 O 3 crystal phase and the Mo crystal phase (hereinafter, referred to as “residual crystal phase”).
  • the crystal phase includes an Al 2 O 3 crystal phase as a main crystal phase.
  • the crystal phase may include the remaining crystal phase in addition to the Al 2 O 3 crystal phase.
  • the crystal phase may contain only one kind of crystal phase or a plurality of kinds of crystal phases as the remaining crystal phase.
  • the main peak intensity of the X-ray diffraction pattern of the remaining crystal phase is the main peak of the X-ray diffraction pattern of the Al 2 O 3 crystal phase.
  • the strength is preferably 0.5% or less.
  • the bending strength of the ceramic base is set according to the characteristics required for the ceramic package to which the ceramic base is applied. For example, when the ceramic base is applied to a ceramic package that seals a vibrator or a semiconductor element, the bending strength of the ceramic base is preferably 700 MPa or more. Further, when the ceramic base is applied to a ceramic package that seals an optical semiconductor element, the bending strength of the ceramic base is preferably 390 MPa or more. In the present embodiment, “bending strength” means three-point bending strength, and is a value measured at room temperature in accordance with JISR1601 (bending test method for fine ceramics).
  • the relative permittivity of the ceramic base is set according to the characteristics required for the ceramic package to which the ceramic base is applied.
  • the relative permittivity of the ceramic base is not particularly limited.
  • the relative permittivity of the ceramic base is preferably 8.0 or more and 9.0 or less.
  • the porosity of the ceramic substrate is set according to the characteristics required for the ceramic package to which the ceramic substrate is applied. For example, when the ceramic base is applied to a ceramic package that seals a vibrator or a semiconductor element, the porosity of the ceramic base is preferably 3% or less. When the ceramic base is applied to a ceramic package that seals an optical semiconductor element, the porosity of the ceramic base is preferably 3% or more and 8% or less.
  • the "porosity" is a value obtained by photographing a polished ceramic cross section with an electron microscope and binarizing it with image processing software.
  • FIG. 1 is a sectional view of the first ceramic package 100.
  • the first ceramic package 100 includes an insulating substrate 1, a plurality of conductor layers 2, a metallization layer 3, a crystal oscillator 4, a CMOS image sensor 6, a plating layer 8 and a lid 10.
  • the first ceramic package 100 encapsulates the crystal unit 4 and the CMOS image sensor 6.
  • the insulating substrate 1 is composed of the ceramic base described above.
  • the content of each component forming the insulating substrate 1 is as follows.
  • ⁇ Al 2 O 3 82.0 mass% or more and 95.0 mass% or less ⁇ SiO 2 : 3.0 mass% or more and 8.0 mass% or less ⁇ MnO: Sum of the amount of content and Cr 2 O 3 of Mo in 2.0% to 6.0% by mass ⁇ MoO 3 terms: 4.0 mass% or less-The balance: Less than 0.1% by mass
  • the insulating substrate 1 since the content of the balance is suppressed to less than 0.1% by mass, the respective components are uniformly sintered in a dispersed state without segregation. As a result, dimensional variation is suppressed.
  • the bending strength of the insulating substrate 1 is preferably 700 MPa or more.
  • the porosity of the insulating substrate 1 is preferably 3% or less.
  • the insulating substrate 1 has a bottom portion 1a and a side wall portion 1b.
  • the side wall portion 1b is arranged on the outer edge of the bottom portion 1a.
  • the bottom portion 1a and the side wall portion 1b may be integrally formed.
  • Each conductor layer 2 is provided so as to penetrate the bottom portion 1a.
  • the metallized layer 3 is arranged on the upper surface of the side wall portion 1b.
  • the metallized layer 3 is formed in a ring shape.
  • the metallized layer 3 can be formed by using W or Mo as a main component as a conductor and adding a ceramic component to it.
  • the insulating substrate 1 according to the present embodiment and the metallized layer 3 are produced by simultaneous firing in a reducing atmosphere containing hydrogen, nitrogen and water vapor.
  • the crystal unit 4 is an example of a unit.
  • the crystal unit 4 is connected to the conductor layer 2 via the conductive adhesive 5.
  • the CMOS image sensor 6 is an example of a semiconductor element.
  • the CMOS image sensor 6 is connected to the conductor layer 2 via the wire bonding 7.
  • the plating layer 8 is arranged on the upper surface of the metallization layer 3.
  • the plating layer 8 is formed in a ring shape.
  • the lid 10 is arranged on the plating layer 8 with the eutectic Ag—Cu brazing material 9 interposed therebetween.
  • the lid 10 closes the opening of the side wall portion 1b.
  • the lid 10 can be made of a metal material.
  • FIG. 2 is a sectional view of the second ceramic package 200.
  • the second ceramic package 200 includes a base 11, an electronic cooling element 12, an optical semiconductor element 13, a multilayer circuit board 14, a frame 15, a seal ring 16, a lid 17, a transparent window member 18, a pipe 19, and an optical fiber connection.
  • the tube 20a and the optical fiber 20b are provided.
  • the second ceramic package 200 seals the optical semiconductor element 13.
  • the second ceramic package 200 is a so-called optical module.
  • the base 11 is formed in a plate shape.
  • the base 11 is made of a material having a high thermal conductivity such as copper tungsten.
  • the electronic cooling element 12 is arranged on the base 11.
  • the optical semiconductor element 13 is arranged on the electronic cooling element 12.
  • the multilayer circuit board 14 is arranged on the outer edge of the base 11.
  • the multilayer circuit board 14 is provided with input terminals 30a and 30b exposed to the outside of the package and output terminals 31a and 31b exposed to the inside of the package.
  • a positive phase signal is externally input to the input terminal 30a.
  • a negative phase signal having a negative phase and a positive phase signal is input to the input terminal 30b.
  • the positive phase signal input to the input terminal 30a is output to the optical semiconductor element 13 from the output terminal 31a via the bonding wire 13a.
  • the negative phase signal input to the input terminal 30b is output to the optical semiconductor element 13 from the output terminal 31b via the bonding wire 13b.
  • the positive phase signal and the negative phase signal are collectively referred to as a differential signal.
  • the frame body 15 is arranged on the multilayer circuit board 14.
  • the seal ring 16 is arranged on the upper surface of the frame body 15.
  • the seal ring 16 is a member for welding the lid 17.
  • Each of the seal ring 16 and the lid 17 can be made of Kovar in which iron is mixed with nickel and cobalt.
  • a pipe 19 is fitted into a hole 19a formed between the multilayer circuit board 14 and the frame 15.
  • the pipe 19 houses the translucent window member 18.
  • the translucent window member 18 is made of sapphire, glass, or the like.
  • An optical fiber connecting pipe 20a is connected to the pipe 19.
  • Each of the pipe 19 and the optical fiber connecting pipe 20a can be configured by Kovar or the like.
  • An optical fiber 20b is fixed to the optical fiber connecting tube 20a.
  • FIG. 3 is an exploded perspective view showing the configuration of the multilayer circuit board 14.
  • the multilayer circuit board 14 includes six layers of circuit boards 14a to 14f, first signal lines 21a, 22a, 23a, second signal lines 21b, 22b, 23b, ground layers 24a, 24b, 24c, ground vias 25a, 25b, 25c. , And ground terminals 26a, 26b, 26c.
  • Each of the circuit boards 14a to 14f is composed of the above-mentioned ceramic base.
  • the content of each component constituting each circuit board 14a to 14f is as follows.
  • ⁇ Al 2 O 3 82.0 mass% or more and 95.0 mass% or less ⁇ SiO 2 : 3.0 mass% or more and 8.0 mass% or less ⁇ MnO: Sum of the amount of content and Cr 2 O 3 of Mo in 2.0% to 6.0% by mass ⁇ MoO 3 terms: 4.0 mass% or less-The balance: Less than 0.1% by mass
  • each of the circuit boards 14a to 14f since the content of the balance is suppressed to less than 0.1% by mass, the respective components are uniformly baked without being segregated. By being tied, dimensional variation is suppressed.
  • the relative permittivity of each of the circuit boards 14a to 14f is preferably 8.0 or more and 9.0 or less.
  • the bending strength of each of the circuit boards 14a to 14f is preferably 390 MPa or more.
  • the porosity of each of the circuit boards 14a to 14f can be set to 3% or more and 8% or less.
  • the 6-layer circuit boards 14a to 14f are stacked in this order.
  • the above-mentioned input terminals 30a and 30b and output terminals 31a and 31b are provided on the sixth-layer circuit board 14f.
  • the input-side via connection portion 21a of the first signal lines 21a, 22a, and 23a is configured as a via conductor penetrating from the sixth-layer circuit board 14f to the third-layer circuit board 14c, and is connected to the first input terminal 30a.
  • the interlayer wiring portions 22a are connected to each other.
  • the input-side via connection portion 21b of the first signal lines 21b, 22b, and 23b is configured as a via conductor penetrating from the sixth-layer circuit board 14f to the fifth-layer circuit board 14e, and is connected to the second input terminal 30b.
  • the interlayer wiring portions 22b are connected to each other.
  • the output-side via connection portion 23a of the first signal lines 21a, 22a, and 23a is configured as a via conductor penetrating from the sixth-layer circuit board 14f to the third-layer circuit board 14c, and the first output terminal 31a.
  • the interlayer wiring part 22a are connected.
  • the output-side via connection portion 23b of the second signal lines 21b, 22b, and 23b is configured as a via conductor penetrating from the sixth-layer circuit board 14f to the fifth-layer circuit board 14e, and is connected to the second output terminal 31b.
  • the interlayer wiring portions 22b are connected to each other.
  • a ground layer 24b is arranged between the two interlayer wiring parts 22a and 22b.
  • the ground layer 24a is provided on the first-layer circuit board 14a provided with the interlayer wiring portion 22a.
  • a ground layer 24c is provided on the fifth-layer circuit board 14e provided with the interlayer wiring portion 22b.
  • the ground layers 24a, 24b, 24c form a conductive metal electrode.
  • the ground layers 24a, 24b, 24c are connected to the ground terminals 26a, 26b, 26c on the sixth-layer circuit board 14f via the ground vias 25a, 25b, 25c.
  • the positive phase signal input to the input terminal 30a is transmitted to the output terminal 31a via the first signal lines 21a, 22a and 23a, and then via the bonding wire 13a. It is output to the optical semiconductor element 13.
  • the negative phase signal input to the input terminal 30b is transmitted to the second output terminal 31b via the second signal lines 21b, 22b, 23b, and then output to the optical semiconductor element 13 via the bonding wire 13b.
  • the optical semiconductor element 13 is driven by a differential signal input from the output terminals 31a and 31b, and outputs a laser light signal to the transparent window member 18 side.
  • the optical signal output from the optical semiconductor element 13 is transmitted by the optical fiber 20b.
  • Polyvinyl butyral, a tertiary amine, and a phthalic acid ester were mixed as an organic component with the obtained mixed powder, and IPA (isopropyl alcohol) and toluene were further mixed as a solvent to prepare a slurry.
  • DINP diisononyl phthalate
  • a ceramic tape with a thickness of 50 to 400 ⁇ m was produced by the doctor blade method.
  • the obtained ceramic tape was cut into a length of 50 mm and a width of 50 mm, arranged on a firing setter made of Mo, and fired at the firing temperature (maximum temperature) shown in Table 1 (2 hours).
  • the firing temperature maximum temperature
  • 100 fired substrates of each of Examples 1 to 17 and Comparative Examples 1 to 8 were prepared.
  • the temperature variation in the furnace when fired at the firing temperatures shown in Table 1 was within ⁇ 5 ° C.
  • Examples 15 to 17 in which the ratio of the content of SiO 2 to the content of MnO was 1.9 or more and 3.5 or less, the relative dielectric constant of 8.0 or more and 9.0 or less and the bending strength of 390 MPa or more. It was possible to achieve both strength and strength. Therefore, it was found that Examples 15 to 17 are suitable for a ceramic package (for example, one for encapsulating an optical semiconductor element) which requires a relatively low relative dielectric constant.

Abstract

L'invention concerne un corps cru en céramique comprenant de l'Al2O3, du SiO2 et du MnO en tant que constituants essentiels et au moins l'un parmi Mo et Cr2O3 en tant que constituants facultatifs. Dans le corps cru en céramique, la quantité d'Al2O3 est de 82,0 %-95,0 % en masse (valeurs extrêmes incluses), la quantité de SiO2 est de 3,0 %-8,0 % en masse (valeurs extrêmes incluses), la quantité de MnO est de 2,0 %-6,0 % en masse (valeurs extrêmes incluses), le total de la quantité de Mo en termes de MoO3 et de la quantité de Cr2O3 est de 4,0 % en masse ou moins et la quantité restante est inférieure à 0,1 % en masse.
PCT/JP2019/040478 2018-10-22 2019-10-15 Corps cru en céramique WO2020085148A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201980048264.5A CN112601727A (zh) 2018-10-22 2019-10-15 陶瓷坯体
JP2020553197A JP7108704B2 (ja) 2018-10-22 2019-10-15 セラミック素地
CN202310527850.6A CN116715512A (zh) 2018-10-22 2019-10-15 陶瓷坯体

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JP2018-198661 2018-10-22
JP2018198661 2018-10-22

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WO2020085148A1 true WO2020085148A1 (fr) 2020-04-30

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CN (2) CN112601727A (fr)
WO (1) WO2020085148A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022208900A1 (fr) * 2021-03-29 2022-10-06 Ｎｇｋエレクトロデバイス株式会社 Corps fritté en céramique et substrat pour dispositif semiconducteur
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WO2023243542A1 (fr) * 2022-06-13 2023-12-21 Ｎｇｋエレクトロデバイス株式会社 Corps fritté

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