WO2020059385A1 - 基板処理装置、及び基板処理方法 - Google Patents

基板処理装置、及び基板処理方法 Download PDF

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Publication number
WO2020059385A1
WO2020059385A1 PCT/JP2019/032435 JP2019032435W WO2020059385A1 WO 2020059385 A1 WO2020059385 A1 WO 2020059385A1 JP 2019032435 W JP2019032435 W JP 2019032435W WO 2020059385 A1 WO2020059385 A1 WO 2020059385A1
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WIPO (PCT)
Prior art keywords
liquid
pipe
substrate
opening
chemical
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PCT/JP2019/032435
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English (en)
French (fr)
Japanese (ja)
Inventor
貴大 山口
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to KR1020237001511A priority Critical patent/KR102541675B1/ko
Priority to KR1020217007888A priority patent/KR102489705B1/ko
Priority to CN201980061928.1A priority patent/CN112753094A/zh
Publication of WO2020059385A1 publication Critical patent/WO2020059385A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1002—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves
    • B05C11/1007—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves responsive to condition of liquid or other fluent material
    • B05C11/1013—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves responsive to condition of liquid or other fluent material responsive to flow or pressure of liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • B05C5/027—Coating heads with several outlets, e.g. aligned transversally to the moving direction of a web to be coated
    • B05C5/0275—Coating heads with several outlets, e.g. aligned transversally to the moving direction of a web to be coated flow controlled, e.g. by a valve
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method.
  • a substrate processing apparatus for processing a substrate has been used.
  • the substrate is, for example, a semiconductor wafer or a glass substrate for a liquid crystal display device.
  • Patent Document 1 discloses a single-wafer-type substrate processing apparatus that processes substrates one by one.
  • the substrate processing apparatus described in Patent Literature 1 includes a spin chuck and a processing liquid supply device.
  • the spin chuck rotates the substrate.
  • the processing liquid supply device supplies the processing liquid to the substrate held by the spin chuck.
  • the processing liquid supply device includes a nozzle, a supply pipe, and a valve.
  • the nozzle discharges the processing liquid toward the substrate.
  • the supply pipe supplies the processing liquid to the nozzle.
  • the valve is provided on the delivery pipe.
  • the processing liquid is supplied to the substrate by being discharged from the nozzle.
  • the valve has a valve body and a valve seat. The valve closes when the valve body contacts the valve seat, and opens when the valve body moves away from the valve seat.
  • the processing liquid sometimes remained between the valve and the nozzle.
  • the processing liquid existing between the valve and the nozzle may drop from the nozzle in a state where the substrate processing apparatus is not processing the substrate.
  • the present invention provides a substrate processing apparatus and a substrate processing method that can prevent a processing liquid from dripping from a nozzle in a state where the substrate processing apparatus is not processing a substrate.
  • a substrate processing apparatus processes a substrate by supplying a processing liquid from a nozzle to the substrate.
  • the substrate processing apparatus includes a liquid supply pipe, a supply pipe, a return pipe, an adjustment valve, and a control unit.
  • the liquid supply pipe guides the processing liquid.
  • the supply pipe guides the treatment liquid guided by the liquid supply pipe to the nozzle.
  • the return pipe guides the processing liquid guided by the liquid supply pipe along a different path from the supply pipe.
  • An adjustment valve is provided in the return pipe.
  • the control unit controls the adjustment valve.
  • the control unit can switch an opening degree of the adjustment valve to one of a first opening degree and a second opening degree.
  • the first opening indicates an opening at which all or a part of the processing liquid guided by the liquid sending pipe is supplied to the supply pipe.
  • the second opening indicates an opening at which all or a part of the processing liquid in the supply pipe is supplied to the return pipe.
  • the flow path of the processing liquid has a branch, a first flow path, a second flow path, and a third flow path.
  • the branch part is a branch point of the liquid supply pipe, the supply pipe, and the return pipe.
  • the first flow path is located on the liquid sending pipe side with respect to the branch portion.
  • the second flow path is located on the supply pipe side with respect to the branch portion.
  • the third flow path is located on the return pipe side with respect to the branch portion.
  • the first angle is greater than the second angle.
  • the first angle indicates an angle formed by a first direction from the branch to the first flow path and a third direction from the branch to the third flow path.
  • the second angle indicates an angle between the first direction and a second direction from the branch portion toward the second flow path.
  • the substrate processing apparatus of the present invention further includes a throttle unit.
  • the throttle unit is provided in the first flow path.
  • the diameter of the upstream portion of the third flow passage is larger than the diameter of a portion of the first flow passage located downstream of the throttle portion.
  • the first opening indicates that the opening of the adjustment valve is smaller than a predetermined opening.
  • the second opening indicates that the opening of the adjustment valve is greater than or equal to the predetermined opening.
  • the opening of the adjustment valve when the opening of the adjustment valve is equal to or more than the predetermined opening and the opening of the adjustment valve is fixed to a constant value, the retention of the processing liquid in the supply pipe is prevented.
  • the end position is kept in a fixed position.
  • the opening degree of the adjustment valve when the opening degree of the adjustment valve is fixed at a fixed value equal to or greater than the predetermined opening degree, the larger the fixed opening degree of the adjustment valve is, the higher the retention end position is. Held in position.
  • the substrate processing apparatus of the present invention further includes a circulation pipe.
  • the processing liquid circulates in the circulation pipe.
  • the processing liquid flowing through the circulation pipe is supplied to the liquid sending pipe.
  • the processing liquid guided by the return pipe is supplied to the circulation pipe.
  • a substrate processing method is a method of processing a substrate by supplying a processing liquid from a nozzle to the substrate.
  • the substrate processing method includes a step of switching an opening degree of an adjustment valve provided in the flow path of the processing liquid to one of a first opening degree and a second opening degree.
  • the flow path of the processing liquid is formed by a liquid supply pipe, a supply pipe, and a return pipe.
  • the liquid supply pipe guides the processing liquid.
  • the supply pipe guides the treatment liquid guided by the liquid supply pipe to the nozzle.
  • the return pipe guides the processing liquid guided by the liquid supply pipe along a different path from the supply pipe.
  • the adjustment valve is provided in the return pipe.
  • the first opening indicates an opening at which all or a part of the processing liquid guided by the liquid sending pipe is supplied to the supply pipe.
  • the second opening indicates an opening at which all or a part of the processing liquid in the supply pipe is supplied to the return pipe.
  • the processing liquid can be prevented from dripping from the nozzle in a state where the substrate processing apparatus is not processing the substrate.
  • FIG. 1 is a plan view schematically showing a configuration of a substrate processing apparatus 100 according to an embodiment of the present invention.
  • the substrate processing apparatus 100 is a single-wafer processing apparatus that processes substrates W one by one.
  • the substrate W is, for example, a silicon wafer, a resin substrate, or a glass / quartz substrate.
  • a disk-shaped semiconductor substrate is exemplified as the substrate W.
  • the shape of the substrate W is not particularly limited.
  • the substrate W may be formed in a rectangular shape, for example.
  • the substrate processing apparatus 100 includes a plurality of load ports LP, a plurality of processing units 1, a storage unit 2, and a control unit 3.
  • the load port LP holds the carrier C containing the substrate W.
  • the processing unit 1 processes the substrate W transported from the load port LP with a processing fluid.
  • the processing fluid indicates, for example, a processing liquid or a processing gas.
  • the storage unit 2 includes a main storage device (for example, a semiconductor memory) such as a ROM (Read Only Memory) and a RAM (Random Access Memory), and may further include an auxiliary storage device (for example, a hard disk drive).
  • a main storage device for example, a semiconductor memory
  • ROM Read Only Memory
  • RAM Random Access Memory
  • auxiliary storage device for example, a hard disk drive
  • the control unit 3 includes a processor such as a CPU (Central Processing Unit) and an MPU (Micro Processing Unit). The control unit 3 controls each element of the substrate processing apparatus 100.
  • a processor such as a CPU (Central Processing Unit) and an MPU (Micro Processing Unit).
  • the control unit 3 controls each element of the substrate processing apparatus 100.
  • the substrate processing apparatus 100 further includes a transfer robot.
  • the transfer robot transfers the substrate W between the load port LP and the processing unit 1.
  • the transfer robot includes an indexer robot IR and a center robot CR.
  • the indexer robot IR transports the substrate W between the load port LP and the center robot CR.
  • the center robot CR transports the substrate W between the indexer robot IR and the processing unit 1.
  • Each of the indexer robot IR and the center robot CR includes a hand that supports the substrate W.
  • the substrate processing apparatus 100 further includes a plurality of fluid boxes 4 and a chemical cabinet 5.
  • the plurality of fluid boxes 4 and the processing unit 1 are arranged inside a housing 100a of the substrate processing apparatus 100.
  • Chemical solution cabinet 5 is arranged outside casing 100a of substrate processing apparatus 100.
  • the chemical solution cabinet 5 may be arranged on the side of the substrate processing apparatus 100. Further, the chemical solution cabinet 5 may be arranged below (underground) a clean room in which the substrate processing apparatus 100 is installed.
  • the plurality of processing units 1 constitute a tower U stacked vertically.
  • a plurality of towers U are provided.
  • the plurality of towers U are arranged so as to surround the center robot CR in plan view.
  • ⁇ ⁇ In the present embodiment, three processing units 1 are stacked on the tower U. Also, four towers U are provided. The number of the processing units 1 constituting the tower U is not particularly limited. Also, the number of towers U is not particularly limited.
  • a plurality of fluid boxes 4 correspond to a plurality of towers U, respectively.
  • the chemical in the chemical cabinet 5 is supplied via the fluid box 4 to the tower U corresponding to the fluid box 4.
  • the chemical liquid is supplied to all the processing units 1 included in the tower U.
  • FIG. 2 is a side view schematically illustrating the configuration of the processing unit 1.
  • the processing unit 1 includes a chamber 6, a spin chuck 10, and a cup 14.
  • the chamber 6 includes a partition 8, a shutter 9, and an FFU 7 (fan filter unit).
  • the partition 8 has a hollow shape.
  • the partition 8 is provided with a transfer port.
  • the shutter 9 opens and closes the transport port.
  • the FFU 7 forms a downflow of clean air in the chamber 6. Clean air is air filtered by a filter.
  • the center robot CR carries the substrate W into the chamber 6 through the transfer port, and unloads the substrate W from the chamber 6 through the transfer port.
  • the spin chuck 10 is disposed in the chamber 6.
  • the spin chuck 10 rotates the substrate W around the rotation axis A1 while holding the substrate W horizontally.
  • the rotation axis A1 is a vertical axis passing through the center of the substrate W.
  • the spin chuck 10 includes a plurality of chuck pins 11, a spin base 12, a spin motor 13, a cup 14, and a cup elevating unit 15.
  • the spin base 12 is a disk-shaped member.
  • the plurality of chuck pins 11 hold the substrate W on the spin base 12 in a horizontal posture.
  • the spin motor 13 rotates the substrate W about the rotation axis A1 by rotating the plurality of chuck pins 11.
  • the spin chuck 10 of the present embodiment is a sandwich type chuck that brings the plurality of chuck pins 11 into contact with the outer peripheral surface of the substrate W.
  • the spin chuck 10 may be a vacuum chuck.
  • the vacuum chuck holds the substrate W horizontally by adsorbing the back surface (lower surface) of the substrate W, which is the non-device formation surface, to the upper surface of the spin base 12.
  • the cup 14 receives the processing liquid discharged from the substrate W.
  • the cup 14 includes an inclined portion 14a, a guide portion 14b, and a liquid receiving portion 14c.
  • the inclined portion 14a is a cylindrical member that extends diagonally upward toward the rotation axis A1.
  • the inclined portion 14a includes an annular upper end having an inner diameter larger than that of the substrate W and the spin base 12.
  • the upper end of the inclined portion 14a corresponds to the upper end of the cup 14.
  • the upper end of the cup 14 surrounds the substrate W and the spin base 12 in a plan view.
  • the guide portion 14b is a cylindrical member extending downward from the lower end (outer end) of the inclined portion 14a.
  • the liquid receiving portion 14c is located below the guide portion 14b and forms an annular groove that opens upward.
  • the cup lifting unit 15 raises and lowers the cup 14 between a rising position and a lowering position.
  • the upper end of the cup 14 is located above the spin chuck 10.
  • the cup 14 is located at the lower position, the upper end of the cup 14 is located below the spin chuck 10.
  • the cup 14 When the processing liquid is supplied to the substrate W, the cup 14 is located at the raised position. The processing liquid scattered outward from the substrate W is received by the inclined part 14a and then collected in the liquid receiving part 14c via the guide part 14b.
  • the processing unit 1 further includes a rinsing liquid nozzle 16, a rinsing liquid pipe 17, and a rinsing liquid valve 18.
  • the rinsing liquid nozzle 16 discharges a rinsing liquid toward the substrate W held by the spin chuck 10.
  • the rinsing liquid nozzle 16 is connected to a rinsing liquid pipe 17.
  • a rinse liquid valve 18 is interposed in the rinse liquid pipe 17.
  • the rinsing liquid is, for example, pure water (deionized water: Deionized @ Water).
  • the rinsing liquid is not limited to pure water, and may be carbonated water, electrolytic ionic water, hydrogen water, ozone water, and / or a diluted hydrochloric acid solution.
  • the dilution concentration is, for example, a concentration of 10 ppm or more and 100 ppm or less.
  • the processing unit 1 further includes a chemical liquid nozzle 21 and a nozzle moving unit 22.
  • the chemical liquid nozzle 21 discharges a chemical liquid toward the substrate W held by the spin chuck 10.
  • the nozzle moving unit 22 moves the chemical liquid nozzle 21 between the processing position and the retreat position.
  • the processing position indicates a position at which the chemical liquid nozzle 21 discharges a chemical toward the substrate W.
  • the retracted position indicates a position where the chemical liquid nozzle 21 is separated from the substrate W.
  • the nozzle moving unit 22 moves the chemical liquid nozzle 21 by, for example, turning the chemical liquid nozzle 21 around the swing axis A2.
  • the swing axis A2 is a vertical axis located around the cup 14.
  • the substrate processing apparatus 100 further includes a chemical solution supply device 30.
  • the chemical supply device 30 supplies a chemical to the chemical nozzle 21 of the processing unit 1.
  • the chemical supplied to the chemical nozzle 21 includes, for example, isopropyl alcohol (IPA).
  • the chemical is an example of the treatment liquid of the present invention.
  • the chemical liquid nozzle 21 is an example of the nozzle of the present invention.
  • FIG. 3 is a flowchart illustrating an example of processing performed on the substrate W by the substrate processing apparatus 100.
  • step S1 the control unit 3 performs a transfer process of transferring the substrate W into the chamber 6.
  • the procedure of the transport process will be described.
  • Step S2 When the substrate W is transported onto the spin chuck 10, the chuck pins 11 hold the substrate W. Then, the spin motor 13 rotates the chuck pin 11. As a result, the substrate W rotates. When the substrate W rotates, the processing shifts to Step S2.
  • step S2 the control unit 3 performs a chemical liquid supply process of supplying a chemical liquid to the substrate W.
  • a chemical liquid supply process of supplying a chemical liquid to the substrate W.
  • the nozzle moving unit 22 moves the chemical solution nozzle 21 to the processing position. Then, the cup lifting unit 15 raises the cup 14 to the raised position. Then, the chemical solution supply device 30 starts supplying the chemical solution to the chemical solution nozzle 21. As a result, the chemical liquid nozzle 21 discharges the chemical liquid toward the substrate W.
  • the nozzle moving unit 22 may move the chemical liquid nozzle 21 between the central processing position and the outer peripheral processing position.
  • the central processing position indicates a position at which the chemical liquid discharged from the chemical liquid nozzle 21 lands on the center of the upper surface of the substrate W.
  • the outer peripheral processing position indicates a position where the chemical liquid discharged from the chemical liquid nozzle 21 lands on the outer peripheral part of the upper surface of the substrate W.
  • the nozzle moving unit 22 moves the chemical liquid nozzle 21 between the central processing position and the outer peripheral processing position, the entire upper surface of the substrate W is scanned at the liquid landing position. Therefore, it is possible to uniformly supply the chemical solution to the entire upper surface of the substrate W.
  • Step S3 When a predetermined time has elapsed since the supply of the chemical solution to the chemical solution nozzle 21 was started, the supply of the chemical solution to the chemical solution nozzle 21 was stopped. Then, the nozzle moving unit 22 moves the chemical liquid nozzle 21 to the retracted position. When the chemical liquid nozzle 21 reaches the retreat position, the processing shifts to Step S3.
  • step S3 the control unit 3 performs a rinsing liquid supply process for supplying pure water, which is an example of a rinsing liquid, to the substrate W.
  • pure water which is an example of a rinsing liquid
  • the rinse liquid valve 18 is opened, and the rinse liquid nozzle 16 starts discharging pure water.
  • the pure water that has landed on the upper surface of the substrate W flows toward the outside of the substrate W along the upper surface of the rotating substrate W.
  • the chemical on the substrate W is washed away by the pure water discharged from the rinse liquid nozzle 16. As a result, a liquid film of pure water is formed on the entire upper surface of the substrate W.
  • Step S4 When a predetermined time elapses after the rinsing liquid valve 18 is opened, the rinsing liquid valve 18 is closed, and the discharge of pure water to the substrate W is stopped. When the discharge of the pure water to the substrate W is stopped, the process proceeds to Step S4.
  • step S4 the control unit 3 performs a drying process for drying the substrate W by rotating the substrate W.
  • the procedure of the drying process will be described.
  • the spin motor 13 rotates the substrate W at a high speed (for example, several thousand rpm) higher than the rotation speed of the substrate W during the chemical liquid supply process and the rotation speed of the substrate W during the rinse liquid supply process. As a result, the liquid is removed from the substrate W, and the substrate W is dried.
  • a high speed for example, several thousand rpm
  • step S5 the control unit 3 performs an unloading process for unloading the substrate W from the chamber 6.
  • the procedure of the unloading process will be described.
  • the cup lifting unit 15 lowers the cup 14 to the lower position. Then, the center robot CR causes the hand to enter the chamber 6. Then, the plurality of chuck pins 11 release the holding of the substrate W.
  • the center robot CR supports the substrate W on the spin chuck 10 with a hand. Then, the center robot CR retracts the hand from the inside of the chamber 6 while supporting the substrate W with the hand. As a result, the processed substrate W is carried out of the chamber 6.
  • step S5 When the processed substrate W is unloaded from the chamber 6, the unloading process shown in step S5 ends.
  • step S5 By repeating the processing from step S1 to step S5, the plurality of substrates W transported to the substrate processing apparatus 100 are processed one by one.
  • FIG. 4 is a schematic diagram illustrating a configuration of the chemical solution supply device 30.
  • a plurality of chemical liquid supply devices 30 are provided.
  • the plurality of chemical liquid supply devices 30 respectively correspond to the plurality of towers U (see FIG. 1).
  • the chemical liquid supply device 30 supplies the chemical liquid to all the processing units 1 constituting the corresponding tower U.
  • one tower U is composed of three processing units 1. Therefore, one chemical supply device 30 supplies the chemicals to the three processing units 1.
  • the chemical liquid supply device 30 includes a supply tank 31, a circulation pipe 32, a circulation pump 33, a circulation filter 34, and a circulation heater 35.
  • the supply tank 31 stores a chemical solution.
  • the circulation pipe 32 is a tubular member. A circulation path for circulating the chemical is formed in the circulation pipe 32.
  • the circulation pipe 32 has an upstream end 32a and a downstream end 32b.
  • the circulation pipe 32 communicates with the supply tank 31. Specifically, the upstream end 32 a and the downstream end 32 b of the circulation pipe 32 communicate with the supply tank 31.
  • the circulation pump 33 sends the chemical in the supply tank 31 to the circulation pipe 32.
  • the circulation pump 33 operates, the chemical in the supply tank 31 is sent to the upstream end 32 a of the circulation pipe 32.
  • the chemical solution sent to the upstream end 32a is conveyed in the circulation pipe 32 and discharged from the downstream end 32b to the supply tank 31.
  • the circulation pump 33 continues to operate, the chemical solution continues to flow in the circulation pipe 32 from the upstream end 32a toward the downstream end 32b. As a result, the chemical circulates through the circulation pipe 32.
  • the circulation filter 34 removes foreign substances such as particles from the chemical solution circulating in the circulation pipe 32.
  • the circulation heater 35 adjusts the temperature of the chemical by heating the chemical.
  • the circulation heater 35 maintains the temperature of the chemical solution at a constant temperature (for example, 60 ° C.) higher than room temperature.
  • the temperature of the chemical circulating in the circulation pipe 32 is maintained at a constant temperature by the circulation heater 35.
  • the circulation pump 33, the circulation filter 34, and the circulation heater 35 are installed in the circulation pipe 32.
  • the supply tank 31, the circulation pump 33, the circulation filter 34, and the circulation heater 35 are installed in the chemical solution cabinet 5.
  • a pressure device may be provided instead of the circulation pump 33.
  • the pressurizing device sends out the chemical solution in the supply tank 31 to the circulation pipe 32 by increasing the pressure in the supply tank 31.
  • the chemical liquid supply device 30 further includes a plurality of supply mechanisms 40. In the present embodiment, three supply mechanisms 40 are provided.
  • Each of the plurality of supply mechanisms 40 communicates with the circulation pipe 32.
  • Each of the plurality of supply mechanisms 40 is supplied with a chemical solution circulating in the circulation pipe 32.
  • the plurality of supply mechanisms 40 correspond to the plurality of processing units 1.
  • the supply mechanism 40 supplies a chemical solution to the corresponding processing unit 1.
  • the chemical supplied to the processing unit 1 is discharged from a chemical nozzle 21.
  • the chemical liquid supply device 30 further includes a collection tank 51, a collection pipe 52, a collection pump 53, and a collection filter 54.
  • the collection tank 51 communicates with each of the plurality of supply mechanisms 40.
  • the recovery tank 51 stores the chemical solution that has passed through each of the plurality of supply mechanisms 40 without being discharged from the chemical solution nozzle 21.
  • the recovery pipe 52 is a tubular member.
  • the collection pipe 52 guides the chemical in the collection tank 51 to the supply tank 31.
  • the recovery pipe 52 includes an upstream end 52a and a downstream end 52b.
  • the upstream end 52a communicates with the collection tank 51.
  • the downstream end 52 b communicates with the supply tank 31.
  • the recovery pump 53 is installed in the recovery pipe 52.
  • the collection pump 53 pumps the chemical in the collection tank 51 to the supply tank 31 through the collection pipe 52.
  • the collection filter 54 is provided on the collection pipe 52. The collection filter 54 removes foreign substances from the chemical solution flowing through the collection pipe 52.
  • FIG. 5 is a schematic diagram illustrating a configuration of the supply mechanism 40.
  • the supply mechanism 40 includes a liquid supply pipe 41, a branch part 42, a supply pipe 43, and a return pipe 44.
  • the liquid supply pipe 41, the supply pipe 43, and the return pipe 44 communicate with each other via a branch portion.
  • the liquid supply pipe 41 is a tubular member.
  • the liquid feed pipe 41 guides the chemical circulating in the circulation pipe 32 to the outside of the circulation pipe 32.
  • the liquid supply pipe 41 includes an upstream end 41a and a downstream end 41b.
  • the upstream end 41 a communicates with the circulation pipe 32.
  • the supply pipe 43 is a tubular member.
  • the supply pipe 43 guides the liquid chemical guided by the liquid supply pipe 41 to the liquid chemical nozzle 21.
  • the supply pipe 43 includes an upstream end 43a and a downstream end 43b.
  • the upstream end 43a communicates with the downstream end 41b of the liquid feed pipe 41 via the branch 42.
  • the downstream end 43 b communicates with the chemical liquid nozzle 21.
  • the return pipe 44 is a tubular member.
  • the return pipe 44 guides the processing liquid guided by the liquid feed pipe 41 along a route different from that of the supply pipe 43.
  • the return pipe 44 guides the chemical to the collection tank 51.
  • the return pipe 44 includes an upstream end 44a and a downstream end 44b.
  • the upstream end 44a communicates with each of the downstream end 41b of the liquid feed pipe 41 and the upstream end 43a of the supply pipe 43 via the branch part 42.
  • the downstream end 44b communicates with the collection tank 51.
  • the supply mechanism 40 further includes a flow meter 45, an interposition member 46, and an adjustment valve 47.
  • the flow meter 45 detects the flow rate of the chemical solution flowing through the liquid sending pipe 41.
  • the flow meter 45 is installed in the liquid sending pipe 41. Specifically, the flow rate of the chemical liquid indicates the amount of the chemical liquid per unit time flowing through a predetermined position in the liquid supply pipe 41.
  • the intervening member 46 is arranged at the branch portion 42.
  • the interposition member 46 is a hollow member.
  • the interposition member 46 is interposed between the liquid sending pipe 41, the supply pipe 43, and the return pipe 44.
  • the liquid supply pipe 41, the supply pipe 43, and the return pipe 44 communicate with each other via an interposition member 46.
  • the adjustment valve 47 is installed on the return pipe 44.
  • the opening of the adjustment valve 47 can be changed.
  • the opening indicates the degree to which the adjustment valve 47 is open. As the opening of the adjustment valve 47 decreases, the degree to which the adjustment valve 47 is open decreases.
  • the adjustment valve 47 includes a drive source such as a motor, and changes the opening degree by the power of the drive source.
  • the control unit 3 shown in FIG. 1 controls the opening of the adjustment valve 47 by operating the drive source.
  • FIG. 6 is a cut end view of the interposition member 46.
  • the interposition member 46 has a first member 46a, a second member 46b, and a third member 46c.
  • the first member 46a, the second member 46b, and the third member 46c are hollow members and communicate with each other.
  • the space where the first member 46a, the second member 46b, and the third member 46c communicate with each other forms the branch portion 42.
  • the first member 46a and the third member 46c protrude from the branch portion 42 in opposite directions.
  • the second member 46b projects from the branch portion 42 in a direction perpendicular to each of the first member 46a and the third member 46c.
  • the first member 46a has the first opening 4A.
  • the first opening 4A connects the inside and the outside of the first member 46a.
  • the downstream end 41b of the liquid feed pipe 41 is connected to the first opening 4A.
  • the second member 46b has the second opening 4B.
  • the second opening 4B communicates the inside and the outside of the second member 46b.
  • the upstream end 43a of the supply pipe 43 is connected to the second opening 4B.
  • the third member 46c has a third opening 4C.
  • the third opening 4C communicates the inside and the outside of the third member 46c.
  • the upstream end 44a of the return pipe 44 is connected to the third opening 4C.
  • the chemical liquid flowing through the liquid supply pipe 41 is supplied to the inside of the interposition member 46 via the first opening 4A.
  • the chemical solution inside the interposition member 46 is supplied to the supply pipe 43 via the second opening 4B.
  • the chemical solution inside the interposition member 46 is supplied to the return pipe 44 via the third opening 4C.
  • the channel for the chemical solution has a branch portion 42, a first channel R1, a second channel R2, and a third channel R3.
  • the branch part 42 is a branch point of the liquid sending pipe 41, the supply pipe 43, and the return pipe 44.
  • the first flow path R ⁇ b> 1 indicates a flow path of the chemical solution located on the liquid sending pipe 41 side with respect to the branch portion 42.
  • the first flow path R1 is located between the branch portion 42 and the upstream end 41a of the liquid feed pipe 41 (see FIG. 5).
  • the second flow path R ⁇ b> 2 indicates a flow path of the chemical solution located on the supply pipe 43 side with respect to the branch portion 42.
  • the second flow path R2 is located between the branch portion 42 and the downstream end 43b of the supply pipe 43.
  • the third flow path R ⁇ b> 3 indicates a flow path of the chemical solution located on the return pipe 44 side with respect to the branch portion 42.
  • the third flow path R3 is located between the branch portion 42 and the downstream end 44b of the
  • the supply mechanism 40 further has a throttle section 46d.
  • the throttle section 46d is arranged in the first flow path R1.
  • the throttle section 46d functions as an orifice that narrows the flow path area of the first flow path R1.
  • the channel area is the area of the cross section of the channel of the chemical solution perpendicular to the direction in which the chemical solution flows.
  • the throttle portion 46d is formed on the first member 46a of the interposition member 46.
  • the aperture portion 46d faces the branch portion 42.
  • the throttle section 46 d ejects the chemical toward the branch section 42.
  • the aperture portion 46d is located near the branch portion 42. Therefore, the chemical liquid flows into the branch portion 42 immediately after being spouted from the throttle portion 46d.
  • FIG. 6 shows a first direction Q1, a second direction Q2, and a third direction Q3.
  • the first direction Q1 indicates a direction from the branch portion 42 to the first flow path R1.
  • the second direction Q2 indicates a direction from the branch portion 42 to the second flow path R2.
  • the third direction Q3 indicates a direction from the branch portion 42 to the third flow path R3.
  • FIG. 6 further shows the first angle ⁇ 1 and the second angle ⁇ 2.
  • the first angle ⁇ 1 indicates an angle between the first direction Q1 and the third direction Q3. More specifically, the first angle ⁇ 1 indicates a smaller angle among angles formed by the first direction Q1 and the third direction Q3.
  • the second angle ⁇ 2 indicates an angle between the first direction Q1 and the second direction Q2. In detail, the second angle ⁇ 2 indicates a smaller one of angles formed by the first direction Q1 and the second direction Q2.
  • the first angle ⁇ 1 is larger than the second angle ⁇ 2 (first angle ⁇ 1> second angle ⁇ 2). That is, the third channel R3 is not bent more with respect to the first channel R1 than the second channel R2. Therefore, the chemical liquid flowing from the first flow path R1 to the branch portion 42 is mainly guided to the third flow path R3. In other words, the throttle section 46d ejects the chemical toward the third flow path R3.
  • the first angle ⁇ 1 is 180 degrees and the second angle ⁇ 2 is 90 degrees.
  • FIG. 7 is a schematic diagram showing the pressure of the chemical solution.
  • FIG. 7 shows the first pressure P1, the second pressure P2, and the third pressure P3.
  • the first pressure P1 indicates the pressure of the chemical solution located in a region of the first flow path R1 upstream of the throttle portion 46d.
  • the second pressure P2 indicates the pressure of the chemical located at the branch portion 42.
  • the third pressure P3 indicates the pressure of the chemical located in the second flow path R2.
  • FIG. 7 further shows the first moving direction X1 and the first moving speed V1.
  • the first movement direction X1 indicates the movement direction of the chemical solution flowing upstream of the throttle portion 46d in the first flow path R1.
  • the first moving speed V1 indicates the moving speed of the chemical solution flowing upstream of the throttle portion 46d in the first flow path R1.
  • FIG. 7 further shows the second movement direction X2 and the second movement speed V2.
  • the second moving direction X2 indicates the moving direction of the chemical when the chemical flows from the first flow path R1 into the branch portion.
  • the second movement direction X2 is a direction opposite to the first direction Q1 shown in FIG.
  • the second moving speed V2 indicates the moving speed of the chemical when the chemical flows from the first flow path R1 into the branch portion.
  • the chemical liquid ejected from the throttle part 46d moves at the second movement speed V2 while moving in the second movement direction X2.
  • the flow passage area of the throttle portion 46d is smaller than the flow passage area upstream of the throttle portion 46d. Therefore, according to Bernoulli's theorem, the moving speed of the chemical solution increases and the pressure of the chemical solution decreases in the narrowed portion 46d as compared with the upstream of the narrowed portion 46d. As a result, the chemical solution accelerated and reduced in pressure by the throttle portion 46d is ejected from the throttle portion 46d.
  • the second pressure P2 is changed by changing the opening of the adjustment valve 47 shown in FIG. As the degree of opening of the adjustment valve 47 decreases, the flow path area of the third flow path R3 where the adjustment valve 47 is located decreases. As a result, the amount of the chemical per unit time passing through the adjustment valve 47 decreases, and the second pressure P2 increases.
  • the change of the opening of the adjustment valve 47 is performed by the control unit 3 shown in FIG.
  • FIG. 7 shows a first diameter D1, a second diameter D2, a third diameter D3, a fourth diameter D4, and a fifth diameter D5.
  • the first diameter D1 indicates a diameter of a portion of the first flow path R1 located upstream of the throttle section 46d.
  • the second diameter D2 indicates the diameter of the throttle section 46d.
  • the third diameter D3 indicates a diameter of a portion of the first flow path R1 located downstream of the throttle section 46d.
  • the fourth diameter D4 indicates the diameter of the upstream part of the third flow path R3.
  • the upstream part of the third flow path R3 indicates the vicinity of the branch part 42 in the third flow path R3.
  • the fifth diameter D5 indicates the diameter of the upstream part of the second flow path R2.
  • the upstream part of the second flow path R2 indicates the vicinity of the branch part 42 in the second flow path R2.
  • the first diameter D1 is larger than the second diameter D2 (first diameter D1> second diameter D2).
  • the third diameter D3 is larger than the second diameter D2 (third diameter D3> second diameter D2).
  • the fourth diameter D4 is greater than or equal to the third diameter D3 (fourth diameter D4 ⁇ third diameter D3).
  • the fourth diameter D4 is equal to or larger than the fifth diameter D5 (fourth diameter D4 ⁇ fifth diameter D5).
  • the magnitude relation between the fourth diameter D4 and the fifth diameter D5 is not particularly limited.
  • the fourth diameter D4 may be smaller than the fifth diameter D5.
  • FIG. 8 is a schematic diagram showing a state in which a chemical is being discharged from the chemical nozzle 21.
  • FIG. 9 is a first graph G1 showing a relationship between the opening degree of the adjustment valve 47 and the discharge amount of the chemical from the chemical nozzle 21.
  • the horizontal axis indicates the opening of the adjustment valve 47.
  • the vertical axis indicates the discharge amount of the chemical from the chemical nozzle 21.
  • the discharge amount of the chemical solution specifically indicates the discharge amount of the chemical solution per unit time.
  • the control unit 3 adjusts the opening degree of the adjustment valve 47 to make the second pressure P2 larger than the third pressure P3, so that the second pressure P2 and the third pressure Due to the pressure difference from P3 (second pressure P2> third pressure P3), a suction force F1 is generated.
  • the suction force F1 indicates a force for sucking the chemical supplied from the first flow path R1 to the branch portion 42 into the second flow path R2. The smaller the opening of the adjustment valve 47, the greater the suction force F1.
  • the first angle ⁇ 1 is larger than the second angle ⁇ 2 ( ⁇ 1> ⁇ 2). Therefore, when the suction force F1 is not generated, the chemical liquid flowing from the first flow path R1 to the branch portion 42 is mainly guided to the third flow path R3. However, when the suction force F1 is generated, the chemical liquid that is about to flow from the branch portion 42 to the third flow path R3 is drawn into the second flow path R2. The chemical solution drawn into the second flow path R2 is supplied to the chemical solution nozzle 21. As a result, the chemical liquid is discharged from the chemical liquid nozzle 21.
  • the adjustment valve 47 When the opening of the adjustment valve 47 is the minimum opening J0, the adjustment valve 47 is open instead of being closed. In this case, the adjustment valve 47 is slightly open. In this case, the chemical supplied from the first flow path R1 to the branch portion 42 is mainly supplied to the chemical liquid nozzle 21 via the second flow path R2. As a result, the chemical liquid is discharged from the chemical liquid nozzle 21. In this case, the discharge amount of the chemical from the chemical nozzle 21 becomes the maximum discharge amount H. In this case, a small amount of the chemical is supplied to the collection tank 51, or no chemical is supplied to the collection tank 51.
  • the adjustment valve 47 may be closed when the opening of the adjustment valve 47 is the minimum opening J0. In this case, all of the chemical liquid supplied to the branch portion 42 from the first flow path R1 is supplied to the chemical liquid nozzle 21 via the second flow path R2. In this case, no chemical is supplied to the collection tank 51.
  • the predetermined opening J1 indicates the minimum value of the opening of the adjustment valve 47 when the chemical liquid is not discharged from the chemical liquid nozzle 21.
  • the opening degree of the adjustment valve 47 When the opening degree of the adjustment valve 47 is larger than the minimum opening degree J0 and smaller than the predetermined opening degree J1, a part of the chemical supplied from the first flow path R1 to the branch portion 42 flows into the second flow path R2. The other part of the chemical supplied to the branch portion 42 flows to the third flow path R3. As a result, the chemical is supplied to the collection tank 51 while the chemical is discharged from the chemical nozzle 21.
  • the retention end position Z of the chemical liquid indicates an end position of the chemical liquid retained in the second flow path R2 on the chemical liquid nozzle 21 side.
  • FIG. 10 is a schematic view showing a state in which the discharge of the chemical from the chemical nozzle 21 is stopped.
  • FIG. 11 is a second graph G2 showing the relationship between the opening degree of the adjustment valve 47 and the position Z at which the chemical solution stays.
  • the horizontal axis indicates the degree of opening of the adjustment valve 47
  • the vertical axis indicates the retention end position Z of the chemical solution.
  • the control unit 3 adjusts the opening degree of the adjustment valve 47 so that the second pressure P2 is smaller than the third pressure P3, so that the second pressure P2 Due to the pressure difference from the third pressure P3 (second pressure P2 ⁇ third pressure P3), a retraction force F2 is generated.
  • the drawing force F2 indicates a force for drawing the chemical solution in the second flow path R2 into the branch portion 42. As the opening of the adjustment valve 47 increases, the retraction force F2 increases.
  • the opening of the adjustment valve 47 is equal to or larger than the predetermined opening J1
  • the retraction force F2 is generated.
  • the discharge of the chemical from the chemical nozzle 21 is stopped.
  • the stagnation end position Z approaches the branch portion 42 as the stagnation end position Z increases.
  • control unit 3 sets the opening of the adjustment valve 47 to one of the first opening and the second opening. Can be switched.
  • the first opening indicates an opening smaller than the predetermined opening J1.
  • all or a part of the chemical solution guided by the liquid sending pipe 41 is supplied to the supply pipe 43.
  • the chemical liquid is discharged from the chemical liquid nozzle 21.
  • the second opening indicates an opening equal to or more than the predetermined opening J1.
  • all or a part of the chemical solution in the supply pipe 43 is supplied to the return pipe 44 by an aspirating effect.
  • the drawing force F2 acts on the chemical solution in the supply pipe 43. Therefore, the control unit 3 fixes the opening of the adjustment valve 47 at a fixed value equal to or larger than the predetermined opening J1 so that the chemical solution in the supply pipe 43 is drawn even when the substrate processing apparatus 100 is not used.
  • the force F2 can be kept applied. As a result, it is possible to prevent the chemical solution from dripping from the chemical solution nozzle 21 when the substrate processing apparatus 100 is not used.
  • the state where the substrate processing apparatus 100 is not used indicates a state where the substrate processing apparatus 100 is not processing the substrate W.
  • the state where the substrate processing apparatus 100 is used indicates a state where the substrate processing apparatus 100 is processing the substrate W.
  • the supply pipe 43 cools down and comes into contact with the air when the supply pipe 43 is cooled. Condensation may form. Then, when the use of the substrate processing apparatus 100 is resumed after the dew condensation occurs in the supply pipe 43, water generated by the dew condensation is mixed with the chemical solution as an impurity, and thus a problem may occur.
  • the opening of the adjustment valve 47 is fixed to a constant value when the opening of the adjustment valve 47 is equal to or greater than the predetermined opening J1, the stagnation end position of the chemical solution in the supply pipe 43 is set. Z is kept in a fixed position.
  • the chemical can be retained in the supply pipe 43 while the substrate processing apparatus 100 is not used. As a result, it is possible to suppress the occurrence of dew condensation in the supply pipe 43, so that it is possible to suppress the occurrence of trouble after the use of the substrate processing apparatus 100 is resumed.
  • the chemical By retaining the chemical in the supply pipe 43 when the substrate processing apparatus 100 is not used, the chemical can be quickly discharged from the chemical nozzle 21 after the use of the substrate processing apparatus 100 is resumed. Further, by changing the position Z of the staying end of the chemical solution in the supply pipe 43, the timing at which the discharge of the chemical solution from the chemical solution nozzle 21 is started can be adjusted.
  • FIGS. 1 to 11 The embodiments of the present invention have been described with reference to the drawings (FIGS. 1 to 11).
  • the present invention is not limited to the above embodiment, and can be implemented in various modes without departing from the gist of the invention (for example, (1) to (6)).
  • Various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above embodiments. For example, some components may be deleted from all the components shown in the embodiment.
  • each component is schematically shown mainly for easy understanding, and the number of each component shown may be different from the actual one for convenience of drawing.
  • the components shown in the above embodiments are merely examples and are not particularly limited, and various changes can be made without substantially departing from the effects of the present invention.
  • FIG. 12 is a diagram showing a modification of the supply mechanism 40. As shown in FIG. 12, the modification of the supply mechanism 40 differs from the substrate processing apparatus 100 of the present embodiment in that a flow meter 45 is provided in the supply pipe 43.
  • the drug solution is stored in the supply tank 31.
  • the rinsing liquid may be stored in the supply tank 31. That is, in FIGS. 5 and 12, the rinsing liquid may flow through the liquid supply pipe 41, the supply pipe 43, and the return pipe 44, and the chemical liquid nozzle 21 may be the rinse liquid nozzle 16.
  • the rinsing liquid is two examples of the processing liquid of the present invention.
  • the rinsing liquid nozzle 16 is two examples of the nozzle of the present invention.
  • the processing liquid of the present invention is not limited to the chemical liquid and the rinsing liquid, and may be any liquid used for processing the substrate W in the substrate processing apparatus 100.
  • the throttle portion 46d is provided as in the present embodiment and the modification of the present embodiment, even if the first moving speed V1 is insufficient to generate the aspirating effect, the throttle portion 46d is not required. 46d makes it possible to make the second moving speed V2 of the chemical liquid faster than the first moving speed V1. Therefore, an aspirating effect can be effectively generated.
  • a first opening / closing bubble that opens and closes the first flow path R1 may be provided in the liquid sending pipe 41.
  • the first opening / closing valve is closed when the substrate processing apparatus 100 is not used, and the first opening / closing valve is opened when the substrate processing apparatus 100 is used.
  • the supply pipe 43 may be provided with a second opening / closing valve for opening and closing the second flow path R2.
  • the second opening / closing valve is closed when the substrate processing apparatus 100 is not used, and the second opening / closing valve is opened when the substrate processing apparatus 100 is used.
  • the first opening / closing valve and the second opening / closing bubble are not provided as in the present embodiment and the modification of the present embodiment in that particles can be effectively suppressed.
  • the chemical solution discharged from the return pipe 44 is supplied through the recovery tank 51 and the recovery pipe 52. It is supplied to the tank 31.
  • the return pipe 44 may be directly connected to the recovery tank 51, and the chemical discharged from the return pipe 44 may be supplied to the recovery tank 51.
  • the return pipe 44 may be directly connected to the circulation pipe 32, and the chemical solution discharged from the return pipe 44 may be supplied to the circulation pipe 32.
  • a condition for returning the chemical in the return pipe 44 to the circulation pipe 32 is that the pressure of the chemical in the circulation pipe 32 is lower than the pressure of the chemical in the return pipe 44.
  • the processing unit 1 may further include the facing member 23 (see FIG. 12).
  • the opposing member (blocking plate) 23 can be disposed so as to oppose the upper surface of the substrate W.
  • the dimension of the surface of the facing member 23 facing the upper surface of the substrate W is larger than, for example, the size of the upper surface of the substrate W.
  • the chemical liquid nozzle 21 faces the upper surface of the substrate W at an interval from the center of the facing member 23.
  • the present invention is applicable to the field of a substrate processing apparatus and a substrate processing method.
  • Adjustment valve 100 Substrate processing apparatus D3 Third diameter (diameter of upstream part of third flow path) D4 4th diameter (diameter of portion of first flow path located downstream of throttle section) J1 Predetermined opening degree Q1 First direction Q2 Second direction Q3 Third direction R1 First flow path R2 Second flow path R3 Third flow path W Substrate Z Retaining end position ⁇ 1 First angle ⁇ 2 Second angle

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Fluid Mechanics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
PCT/JP2019/032435 2018-09-21 2019-08-20 基板処理装置、及び基板処理方法 WO2020059385A1 (ja)

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KR1020217007888A KR102489705B1 (ko) 2018-09-21 2019-08-20 기판 처리 장치, 및 기판 처리 방법
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CN115881578A (zh) * 2021-09-29 2023-03-31 盛美半导体设备(上海)股份有限公司 基板处理装置
JP2023098079A (ja) * 2021-12-28 2023-07-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09108605A (ja) * 1995-10-20 1997-04-28 Tdk Corp 間欠塗布方法および間欠塗布装置
WO2014142239A1 (ja) * 2013-03-14 2014-09-18 武蔵エンジニアリング株式会社 液体材料吐出装置、その塗布装置および塗布方法
JP2018137419A (ja) * 2017-02-22 2018-08-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4298384B2 (ja) * 2003-06-04 2009-07-15 大日本スクリーン製造株式会社 液供給装置および基板処理装置
JP2008267640A (ja) * 2007-04-17 2008-11-06 Sumitomo Heavy Ind Ltd 冷却装置および半導体検査装置
JP5319942B2 (ja) 2008-03-18 2013-10-16 大日本スクリーン製造株式会社 ダイヤフラムバルブおよびこれを備えた基板処理装置
JP5714449B2 (ja) * 2011-08-25 2015-05-07 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
JP6725374B2 (ja) * 2016-09-13 2020-07-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6959743B2 (ja) * 2017-02-22 2021-11-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09108605A (ja) * 1995-10-20 1997-04-28 Tdk Corp 間欠塗布方法および間欠塗布装置
WO2014142239A1 (ja) * 2013-03-14 2014-09-18 武蔵エンジニアリング株式会社 液体材料吐出装置、その塗布装置および塗布方法
JP2018137419A (ja) * 2017-02-22 2018-08-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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JP7132054B2 (ja) 2022-09-06
KR20210046033A (ko) 2021-04-27
TWI722550B (zh) 2021-03-21
JP2020047884A (ja) 2020-03-26
KR102541675B1 (ko) 2023-06-13
KR102489705B1 (ko) 2023-01-17

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