WO2020056814A1 - 一种柔性显示装置及其制备方法 - Google Patents

一种柔性显示装置及其制备方法 Download PDF

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Publication number
WO2020056814A1
WO2020056814A1 PCT/CN2018/109968 CN2018109968W WO2020056814A1 WO 2020056814 A1 WO2020056814 A1 WO 2020056814A1 CN 2018109968 W CN2018109968 W CN 2018109968W WO 2020056814 A1 WO2020056814 A1 WO 2020056814A1
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Prior art keywords
layer
insulating layer
interlayer insulating
metal
display device
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PCT/CN2018/109968
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English (en)
French (fr)
Inventor
王威
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/339,370 priority Critical patent/US10790317B2/en
Publication of WO2020056814A1 publication Critical patent/WO2020056814A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637—Details related to the display arrangement, including those related to the mounting of the display in the housing
    • G06F1/1652—Details related to the display arrangement, including those related to the mounting of the display in the housing the display being flexible, e.g. mimicking a sheet of paper, or rollable
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Definitions

  • the present invention relates to the field of display technology, and in particular, to a flexible display device and a manufacturing method thereof.
  • a flexible display device is a display device formed based on a flexible base material. Because the flexible display device has the characteristics of being rollable, wide viewing angle, and easy to carry, the flexible display device has broad application prospects and good market potential in portable products and most display application fields.
  • the flexible back plate of the flexible display device is still made of metal and inorganic functional film layers.
  • the interlayer insulating layer plays the following functions: 1. Shields signal interference between metal traces; 2. Provides hydrogen atoms to repair the defects of the active layer in high-temperature hydrogenation process .
  • the interlayer insulating layer is generally required to have a certain thickness, and when the display device is bent, the thicker interlayer insulating layer is liable to generate cracks and crack growth under bending stress, resulting in a thin film Failure of the transistor device.
  • the present invention provides a flexible display device, which solves the problem of thin film transistor devices that are liable to crack and crack growth under bending stress when the display device is bent in the existing flexible display device under bending stress. technical problem.
  • the present invention provides a flexible display device, including:
  • An active layer disposed on a surface of the flexible substrate
  • a gate insulating layer disposed on the flexible substrate and covering the active layer
  • a gate metal layer disposed on the gate insulating layer
  • An interlayer insulating layer disposed on the gate insulating layer and covering the gate metal layer;
  • a second metal layer disposed on the interlayer insulating layer
  • a flat layer disposed on the gate insulating layer and covering the interlayer insulating layer and the second metal layer;
  • a plurality of channels are provided on the interlayer insulating layer, and two ends of the channel extend to the edge of the interlayer insulating layer to penetrate the interlayer insulating layer, and the interlayer insulation is located below the second metal layer.
  • the vertical projection of the layer includes the vertical projection of the second metal layer; the depth of the channel is not less than the thickness of the interlayer insulating layer; the channel divides the interlayer insulating layer into a plurality of insulating spacers
  • the longitudinal section of the insulating partition is a trapezoid.
  • the second metal layer includes a plurality of source-drain metal traces, and the insulation partitions correspond to the source-drain metal traces one-to-one.
  • the flexible substrate includes a first flexible substrate, and a first barrier layer, a second flexible substrate, and a second barrier layer that are sequentially stacked on the first flexible substrate.
  • a flexible display device includes:
  • An active layer disposed on a surface of the flexible substrate
  • a gate insulating layer disposed on the flexible substrate and covering the active layer
  • a gate metal layer disposed on the gate insulating layer
  • An interlayer insulating layer disposed on the gate insulating layer and covering the gate metal layer;
  • a second metal layer disposed on the interlayer insulating layer
  • a flat layer disposed on the gate insulating layer and covering the interlayer insulating layer and the second metal layer;
  • a plurality of channels are provided on the interlayer insulating layer, and two ends of the channel extend to the edge of the interlayer insulating layer to penetrate the interlayer insulating layer, and the interlayer insulation is located below the second metal layer.
  • the vertical projection of the layer includes the vertical projection of the second metal layer.
  • the depth of the channel is not less than the thickness of the interlayer insulating layer.
  • the channel divides the interlayer insulation layer into a plurality of insulation partitions, and the longitudinal section of the insulation partitions is a positive trapezoid.
  • the second metal layer includes a plurality of source-drain metal traces, and the insulation partitions correspond to the source-drain metal traces one-to-one.
  • the flexible substrate includes a first flexible substrate, and a first barrier layer, a second flexible substrate, and a second barrier layer that are sequentially stacked on the first flexible substrate.
  • the present invention also provides a method for manufacturing a flexible display device, including:
  • An interlayer insulating layer covering the gate metal layer is formed on the gate insulating layer;
  • a flat layer covering the second metal layer and the interlayer insulating layer is formed on the second metal layer;
  • a light emitting layer and a packaging layer are formed on the flat layer.
  • a metal electrode via is formed when an interlayer insulating layer is formed.
  • the S60 includes:
  • step S70 when the channel is formed by etching the interlayer insulating layer, the source-drain metal trace is used as the first layer mask.
  • step S63 after the second metal layer is etched, the photoresist located on the source and drain metal traces is retained, and the photoresist is used as the second mask plate for etching the interlayer insulating layer.
  • Graphical interlayer insulation layer is used to replace the existing overall surface film structure, so that the channel becomes the main area where deformation occurs when the panel is bent, improving the reliability of the display device under bending stress, and preventing the interlayer insulation layer
  • the occurrence of cracks and crack propagation under bending stress results in the failure of thin film transistor devices.
  • the source-drain metal traces are used as the interlayer insulation layer and the etching mask of the photoresist, so that there is no need to add a mask to obtain one-to-one insulation lanes corresponding to the source-drain metal traces, so that the channel can be better. While forming the bending stress concentration area, the production cost is reduced.
  • FIG. 1 is a schematic structural diagram of a flexible display device according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a manufacturing process of a flexible display device according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of forming a flexible substrate in an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of forming a patterned active layer in an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of forming a gate insulating layer and a gate metal layer in an embodiment of the present invention
  • FIG. 6 is a schematic diagram of forming an interlayer insulating layer in an embodiment of the present invention.
  • FIG. 7 is a schematic diagram of forming a patterned second metal layer in an embodiment of the present invention.
  • FIG. 8 is a schematic diagram of forming a channel in an embodiment of the present invention.
  • FIG. 9 is a schematic diagram of forming a flexible display device in an embodiment of the present invention.
  • the present invention is directed to the existing flexible display device.
  • the interlayer insulating layer is generally required to have a certain thickness, and the thicker interlayer insulating layer is prone to cracks and crack growth under bending stress Therefore, the technical problem that causes the thin film transistor device to fail is solved by this embodiment.
  • the flexible display device includes a flexible substrate 20 on which an active layer 30, a gate insulating layer 40, and a gate metal layer 50 are stacked in order. , An interlayer insulating layer 60, a second metal layer, a flat layer 80, a light emitting layer 90, and a packaging layer, wherein the second metal layer is used at least as a source-drain signal trace; wherein the gate insulating layer 40
  • the active layer 30 is covered, the interlayer insulating layer 60 covers the gate metal layer 50, and the flat layer 80 covers the interlayer insulating layer 60 and the second metal layer.
  • a plurality of channels 61 are provided on the interlayer insulating layer 60, and both ends of the channel 61 extend to the edge of the interlayer insulating layer 60 to penetrate the interlayer insulating layer 60 and are located in the second metal layer.
  • the vertical projection of the lower interlayer insulating layer 60 includes the vertical projection of the second metal layer.
  • the interlayer insulating layer 60 covers the gate metal layer 50, thereby isolating the gate metal traces from the source-drain metal traces 70, and serves as an insulation to avoid signal interference between the metal traces. At the same time, in the high-temperature hydrogenation process, The interlayer insulation layer 60 provides hydrogen atoms to repair the defects of the active layer 101. Under the premise of ensuring the good insulation characteristics and hydrogenation function of the interlayer insulation layer 60, a patterned interlayer insulation layer 60 is used instead of the existing overall surface layer.
  • the film structure makes the channel 61 the main area where deformation occurs when the display device is bent, and because the thickness of the inorganic film layer at the bottom of the channel 61 is smaller, it can withstand greater bending stress, which improves the display device under bending stress The reliability of the thin film transistor device is prevented while the interlayer insulation layer 60 is cracked and cracks are propagated under bending stress.
  • the interlayer insulating layer 60 may have a single-layer structure or a multilayer laminated structure, and is made of inorganic materials such as SiOx, SiNx, Al2O3, and the like by chemical vapor deposition, physical vapor deposition, and spin coating method. It is made on the gate insulating layer 40; it can be understood that, in a specific implementation, the interlayer insulating layer 60 may also be made of other materials by other methods.
  • the depth of the channel 61 is not less than the thickness of the interlayer insulating layer 60. It can be understood that the deeper the depth of the channel 61, the smaller the thickness of the inorganic film layer at the bottom of the channel 61, so that it can withstand greater bending stress and improve the reliability of the display device under bending stress. It should be understood that The deeper the depth of the trench 61 will increase the manufacturing time and cost, so in the specific implementation, while ensuring the performance of the trench 61, the depth of the trench 61 can be selected according to the production cost.
  • the channel 61 divides the interlayer insulating layer 60 into a plurality of insulating partitions 62, and the longitudinal section of the insulating partitions 62 is a positive trapezoid.
  • the interlayer insulating layer 60 is made on the gate insulating layer 40 by methods such as chemical vapor deposition, physical vapor deposition, and spin coating.
  • the longitudinal section of the insulating partition 62 is set to a positive trapezoid to improve the insulation.
  • the second metal layer includes a plurality of source-drain metal traces 70, and the insulation partitions 62 correspond to the source-drain metal traces one-to-one.
  • the insulating spacer 62 is used to isolate the gate metal trace and the source-drain metal trace 70 to ensure the insulation effect, while reducing the number of the insulation spacers 62 and increasing the area of the channel 61, so that the bending stress is better concentrated
  • the channel 61 improves the reliability of the display device under bending stress.
  • the flexible substrate 20 includes a first flexible substrate 21, and a first barrier layer 22, a second flexible substrate 23, and a second barrier layer 24 that are sequentially stacked on the first flexible substrate 21.
  • the flexible substrate 20 is formed by multi-layer structure compounding to improve the reliability of the flexible substrate 20 and prevent the flexible substrate 20 from cracking during bending.
  • the materials of the first barrier layer 22 and the second barrier layer 24 may be inorganic materials such as SiOx, SiNx, and the like. It can be understood that the materials of the first barrier layer 22 and the second barrier layer 24 include, but are not limited to, the above list.
  • a method for manufacturing a flexible display device as shown in FIG. 2, the method includes:
  • Step S10 forming a flexible substrate on a carrier substrate
  • Step S20 forming a patterned active layer on the flexible substrate
  • Step S30 forming a gate insulating layer covering the active layer on the flexible substrate
  • Step S40 forming a gate metal layer on the gate insulating layer
  • Step S50 forming an interlayer insulating layer covering the gate metal layer on the gate insulating layer;
  • Step S60 forming a patterned second metal layer on the interlayer insulating layer
  • Step S70 Form a channel on the interlayer insulating layer through an etching process
  • Step S80 forming a flat layer covering the second metal layer and the interlayer insulating layer on the second metal layer;
  • Step S90 forming a light-emitting layer and a packaging layer on the flat layer.
  • the carrier substrate may be transparent glass. Of course, it can be understood that the carrier substrate may also be other transparent materials.
  • a first flexible substrate 21 is formed on the surface of the carrier substrate 10
  • a first barrier layer 22 is formed on the first flexible substrate 21
  • a second flexible substrate 23 is formed on the surface of the first barrier layer 22 in combination.
  • a second barrier layer 24 is formed on the flexible substrate 23, thereby forming a complete flexible substrate 20.
  • an active layer 30 is formed on the surface of the flexible substrate 20, and a patterned active layer 30 is formed by an etching process.
  • a gate insulating layer 40 covering the active layer 30 is formed on the flexible substrate 20, and a gate metal layer 50 is formed on the gate insulating layer 40.
  • an interlayer insulating layer 60 covering the gate metal layer 50 is formed on the gate insulating layer 40, and a metal electrode via 63 is formed.
  • the step S60 includes:
  • a second metal layer is formed on the interlayer insulating layer 60.
  • step S70 the source-drain metal trace 70 is used as the first layer mask, and the interlayer insulation layer 60 is etched to form an insulating barrier corresponding to the source-drain metal trace 70 in one-to-one correspondence. Road 62.
  • the source-drain metal as an etching mask for the inter-layer insulation layer 60, the inter-layer insulation layer 60 under the source-drain metal trace 70 will remain, while the inter-layer insulation layer 60 in the region above the source-drain metal trace 70 will After being etched, an insulation partition 62 corresponding to the source-drain metal trace 70 can be obtained without adding a photomask, thereby reducing production costs.
  • the wider channel 61 can better form the bending stress concentration region, and the source and drain metals are used as the etching mask of the interlayer insulating layer 60, so as to ensure the insulating effect of the insulating partition 62 and the hydrogenation function.
  • the width of the insulating partition 62 is reduced, thereby increasing the width of the channel 61, so that the channel 61 can better form a bending stress concentration region.
  • step S63 after the etching is completed, the photoresist on the source-drain metal trace 70 is retained, and the photoresist is used as the second mask layer of the etching interlayer insulating layer 60.
  • the second mask layer protects the source-drain metal traces 70 to prevent the etching process from affecting or damaging the source-drain metal traces 70 without the need to increase photolithography. Process, reduce procedures, reduce production costs.
  • a flat layer 80 covering the second metal layer and the interlayer insulating layer 60 is formed on the second metal layer, and a light emitting layer 90 and an encapsulation layer are formed on the flat layer 80 to form a display device.
  • the beneficial effect of the present invention is: by providing a channel 61 on the interlayer insulating layer 60 to ensure the insulation return and hydrogenation functions of the interlayer insulating layer 60, a patterned interlayer insulating layer 60 is used instead of the existing integral layer.
  • the planar film structure makes the channel 61 the main area where deformation occurs when the panel is bent, improves the reliability of the display device under bending stress, and prevents the interlayer insulating layer 60 from cracking and crack propagation due to bending stress. Failure of the transistor device.
  • the source-drain metal traces 70 are used as the interlayer insulating layer 60 and the photoresist etching mask. Without adding a photomask, the insulation lanes 62 corresponding to the source-drain metal traces 70 can be obtained to make the channels 61 can better form the bending stress concentration area while reducing production costs.

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  • Computer Hardware Design (AREA)
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  • General Physics & Mathematics (AREA)
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  • General Engineering & Computer Science (AREA)
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract

本发明提供一种柔性显示装置，包括柔性衬底，柔性衬底上依次层叠设置有有源层、栅极绝缘层、栅极金属层、层间绝缘层、第二金属层、平坦层以及发光层和封装层；栅极绝缘层覆盖有源层，层间绝缘层覆盖栅极金属层，平坦层覆盖层间绝缘层以及所述第二金属层；层间绝缘层上开设有多条沟道，沟道两端向层间绝缘层边缘延伸以贯穿层间绝缘层。

Description

一种柔性显示装置及其制备方法 技术领域
本发明涉及显示技术领域，尤其涉及一种柔性显示装置及其制备方法。
 背景技术
柔性显示装置是一种基于柔性基底材料形成的显示装置。由于柔性显示装置具有可卷曲、宽视角、便于携带等特点，因此，在便携产品、多数显示应用领域，柔性显示装置具有广阔的应用前景以及良好的市场潜力。
柔性显示技术的出现对柔性背板提出了挑战。柔性显示背板要求所有的功能膜层具有较高的柔性和可靠性。目前，由于材料和工艺的限制，柔性显示器件的柔性背板仍然采用金属和无机的功能膜层来制备。
而在传统的柔性背板结构中，存在较厚的层间绝缘层，起到如下作用：一、屏蔽金属走线间的信号干扰；二、高温氢化工艺中，提供氢原子修补主动层的缺陷。为了保证良好的绝缘特性和补氢效果，一般要求层间绝缘层具有一定的厚度，而显示装置产生弯曲时，较厚的层间绝缘层在弯曲应力下易产生裂纹及裂纹扩展，从而导致薄膜晶体管器件的失效。
 技术问题
本发明提供一种柔性显示装置，以解决现有的柔性显示装置中，显示装置产生弯曲时，较厚的层间绝缘层在弯曲应力下易产生裂纹及裂纹扩展，从而导致薄膜晶体管器件失效的技术问题。
 技术解决方案
本发明提供一种柔性显示装置，包括：
柔性衬底；
设置于所述柔性衬底表面的有源层；
设置于所述柔性衬底上且覆盖所述有源层的栅极绝缘层；
设置于所述栅极绝缘层上的栅极金属层；
设置于所述栅极绝缘层上且覆盖所述栅极金属层的层间绝缘层；
设置于所述层间绝缘层上的第二金属层；
设置于所述栅极绝缘层且覆盖所述层间绝缘层和所述第二金属层的平坦层；
设置于所述平坦层上的发光层和封装层；
其中，所述层间绝缘层上开设有多条沟道，所述沟道两端向所述层间绝缘层边缘延伸以贯穿层间绝缘层，位于所述第二金属层下方的层间绝缘层在竖向上的投影包纳所述第二金属层在竖向上的投影；所述沟道深度不小于所述层间绝缘层厚度；所述沟道将层间绝缘层分割为多条绝缘隔道，所述绝缘隔道的纵截面呈正梯形。
优选的，所述第二金属层包括多条源漏金属走线，所述绝缘隔道与所述源漏金属走线一一对应。
优选的，所述柔性衬底包括第一柔性基板，以及依次层叠设置在第一柔性基板上的第一阻隔层、第二柔性基板和第二阻隔层。
一种柔性显示装置，包括：
柔性衬底；
设置于所述柔性衬底表面的有源层；
设置于所述柔性衬底上且覆盖所述有源层的栅极绝缘层；
设置于所述栅极绝缘层上的栅极金属层；
设置于所述栅极绝缘层上且覆盖所述栅极金属层的层间绝缘层；
设置于所述层间绝缘层上的第二金属层；
设置于所述栅极绝缘层且覆盖所述层间绝缘层和所述第二金属层的平坦层；
设置于所述平坦层上的发光层和封装层；
其中，所述层间绝缘层上开设有多条沟道，所述沟道两端向所述层间绝缘层边缘延伸以贯穿层间绝缘层，位于所述第二金属层下方的层间绝缘层在竖向上的投影包纳所述第二金属层在竖向上的投影。
优选的，所述沟道深度不小于所述层间绝缘层厚度。
优选的，所述沟道将层间绝缘层分割为多条绝缘隔道，所述绝缘隔道的纵截面呈正梯形。
优选的，所述第二金属层包括多条源漏金属走线，所述绝缘隔道与所述源漏金属走线一一对应。
优选的，所述柔性衬底包括第一柔性基板，以及依次层叠设置在第一柔性基板上的第一阻隔层、第二柔性基板和第二阻隔层。
本发明还提供一种柔性显示装置的制备方法，包括：
S10、在承载基板上形成柔性衬底；
S20、在所述柔性衬底上形成图形化的有源层；
S20、在所述柔性衬底上形成覆盖所述有源层的栅极绝缘层；
S40、在所述栅极绝缘层上形成栅极金属层；
S50、在所述栅极绝缘层上形成覆盖所述栅极金属层的层间绝缘层；
S60、在所述层间绝缘层上形成图案化的第二金属层；
S70、通过蚀刻工艺在所述层间绝缘层上形成沟道；
S80、在第二金属层上形成覆盖第二金属层和层间绝缘层的平坦层；
S90、在所述平坦层上形成发光层和封装层。
优选的，在步骤S50中，形成层间绝缘层时，并形成金属电极过孔。
优选的，所述S60包括：
S61、在所述层间绝缘层上形成第二金属层；
S62、在所述第二金属层上涂布光刻胶层，对光刻胶层进行曝光、显影，以形成图案化的光刻胶层；
S63、对第二金属层进行蚀刻，形成图案化的第二金属层。
优选的，在步骤S70中，通过蚀刻层间绝缘层形成沟道时，利用源漏金属走线作为第一层掩膜板。
优选的，在步骤S63中，第二金属层蚀刻完成后，保留位于源漏金属走线上的光刻胶，利用光刻胶作为蚀刻层间绝缘层的第二层掩膜板。
 有益效果
采用图形化的层间绝缘层取代现有的整面性的膜层结构，使沟道成为面板弯曲时形变发生的主要区域，提高显示装置在弯曲应力下的可靠性，同时防止层间绝缘层在弯曲应力下产生裂纹及裂纹扩展导致薄膜晶体管器件的失效。同时利用源漏金属走线作为层间绝缘层和光刻胶的蚀刻掩膜板，无需增加光罩即可得到与源漏金属走线一一对应的绝缘隔道，使沟道可以更好的形成弯曲应力集中区的同时，降低生产成本。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施方式中柔性显示装置的结构示意图；
图2为本发明实施方式中柔性显示装置的制备流程示意图；
图3为本发明实施方式中柔性衬底的形成示意图；
图4为本发明实施方式中图形化的有源层的形成示意图；
图5为本发明实施方式中栅极绝缘层觉栅极金属层的形成示意图；
图6为本发明实施方式中层间绝缘层的形成示意图；
图7为本发明实施方式中图案化的第二金属层的形成示意图；
图8为本发明实施方式中沟道的形成示意图；
图9为本发明实施方式中柔性显示装置的形成示意图。
附图标记：
10、承载基板；
20、柔性衬底；21、第一柔性基板；22、第一阻隔层；23、第二柔性基板；24、第二阻隔层；
30、有源层；
40、栅极绝缘层；
50、栅极金属层；
60、层间绝缘层；61、沟道；62、绝缘隔道；63、金属电极过孔；
70、源漏金属走线；
80、平坦层；90、发光层；101、主动层；102、光刻胶。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的柔性显示装置，为了保证良好的绝缘特性和补氢效果，一般要求层间绝缘层具有一定的厚度，而较厚的层间绝缘层在弯曲应力下易产生裂纹及裂纹扩展，从而导致薄膜晶体管器件失效的技术问题，本实施例能够解决该缺陷。
一种柔性显示装置，如图1所示，所述柔性显示装置包括柔性衬底20，所述柔性衬底20上依次层叠设置有有源层30、栅极绝缘层40、栅极金属层50、层间绝缘层60、第二金属层、平坦层80以及发光层90和封装层，其中，所述第二金属层至少用作源漏极讯号走线；其中，所述栅极绝缘层40覆盖所述有源层30，所述层间绝缘层60覆盖所述栅极金属层50，所述平坦层80覆盖所述层间绝缘层60以及所述第二金属层。
其中，所述层间绝缘层60上开设有多条沟道61，所述沟道61两端向所述层间绝缘层60边缘延伸以贯穿层间绝缘层60，位于所述第二金属层下方的层间绝缘层60在竖向上的投影包纳所述第二金属层在竖向上的投影。
通过层间绝缘层60覆盖栅极金属层50，从而隔绝栅极金属走线与源漏金属走线70，起到绝缘作用，避免金属走线间的信号干扰，同时在高温氢化工艺中，通过层间绝缘层60提供氢原子修补主动层101的缺陷；在保证层间绝缘层60良好的绝缘特性和氢化功能的前提下，采用图形化的层间绝缘层60取代现有的整面性的膜层结构，使沟道61成为显示装置弯曲时形变发生的主要区域，而由于沟道61底部的无机膜层厚度较小，因此可承受更大的弯曲应力，提高了显示装置在弯曲应力下的可靠性，同时防止层间绝缘层60在弯曲应力下产生裂纹及裂纹扩展导致薄膜晶体管器件的失效。
需要说明的是，层间绝缘层60可以为单层结构，也可以为多层叠层结构，由SiOx、SiNx、Al2O3等无机材料制成，通过化学气相沉积、物理气相沉积、旋涂法等方法在栅极绝缘层40上制成；可以理解的是，在具体实施中，层间绝缘层60也可由其他材料通过其他方法制成。
具体的，所述沟道61深度不小于所述层间绝缘层60厚度。可以理解的是，沟道61深度越深，则沟道61底部的无机膜层厚度越小，从而可承受更大的弯曲应力，提高显示装置在弯曲应力下的可靠性；应该理解的是，沟道61深度越深，制造时间和成本也会增加，因此在具体实施中，在保证沟道61性能的同时，可根据生产成本选择沟道61的深度。
其中，所述沟道61将层间绝缘层60分割为多条绝缘隔道62，所述绝缘隔道62的纵截面呈正梯形。上述已经提及，层间绝缘层60通过化学气相沉积、物理气相沉积、旋涂法等方法在栅极绝缘层40上制成，将所述绝缘隔道62的纵截面设置成正梯形，提高绝缘隔道62底部与栅极绝缘层40的接触面积，从而使绝缘隔道62与栅极绝缘层40结合的更加牢固紧密，防止显示装置弯曲时绝缘隔道62产生偏移或与栅极绝缘层40脱离。
具体的，所述第二金属层包括多条源漏金属走线70，所述绝缘隔道62与所述源漏金属走线70一一对应。利用绝缘隔道62隔绝栅极金属走线与源漏金属走线70，保证绝缘作用，同时减小绝缘隔道62的数量，增加沟道61的区域面积，从而使弯曲应力更好的集中在沟道61，提高显示装置在弯曲应力下的可靠性。
所述柔性衬底20包括第一柔性基板21，以及依次层叠设置在第一柔性基板21上的第一阻隔层22、第二柔性基板23和第二阻隔层24。通过多层结构复合形成柔性衬底20，提高柔性衬底20的可靠性，防止弯曲过程中柔性衬底20产生裂纹。
需要说明的是，所述第一阻隔层22和第二阻隔层24的材料可以是无机材料如SiOx，SiNx等。可以理解的是，所述第一阻隔层22和第二阻隔层24的材料包括但不限于上述列举。
一种柔性显示装置的制备方法，如图2所示，所述制备方法包括：
步骤S10、在承载基板上形成柔性衬底；
步骤S20、在所述柔性衬底上形成图形化的有源层；
步骤S30、在所述柔性衬底上形成覆盖所述有源层的栅极绝缘层；
步骤S40、在所述栅极绝缘层上形成栅极金属层；
步骤S50、在所述栅极绝缘层上形成覆盖所述栅极金属层的层间绝缘层；
步骤S60、在所述层间绝缘层上形成图案化的第二金属层；
步骤S70、通过蚀刻工艺在所述层间绝缘层上形成沟道；
步骤S80、在第二金属层上形成覆盖第二金属层和层间绝缘层的平坦层；
步骤S90、在所述平坦层上形成发光层和封装层。
需要说明的是，承载基板可以为透明的玻璃，当然，可以理解的是，承载基本也可为其他透明材料。
如图3所示，在承载基板10表面形成第一柔性基板21，在第一柔性基板21上形成第一阻隔层22，在第一阻隔层22表面复合形成第二柔性基板23，在第二柔性基板23上形成第二阻隔层24，从而形成完整的柔性衬底20。
如图4所示，在柔性衬底20表面形成有源层30，通过蚀刻处理形成图形化的有源层30。
如图5所示，在柔性衬底20上形成覆盖所述有源层30的栅极绝缘层40，在所述栅极绝缘层40上形成栅极金属层50。
如图6所示，在所述栅极绝缘层40上形成覆盖所述栅极金属层50的层间绝缘层60，并形成金属电极过孔63。
如图7所示，所述步骤S60包括：
S61、在所述层间绝缘层60上形成第二金属层；
S62、在所述第二金属层上涂布光刻胶层，对光刻胶层进行曝光、显影，以形成图案化的光刻胶层；
S63、对第二金属层进行蚀刻，形成图案化的第二金属层。
如图8所示，在步骤S70中，利用源漏金属走线70作为第一层掩膜板，对层间绝缘层60进行蚀刻处理，形成与源漏金属走线70一一对应的绝缘隔道62。利用源漏金属作为层间绝缘层60的蚀刻掩膜板，源漏金属走线70下的层间绝缘层60将保留，而上方无源漏金属走线70的区域的层间绝缘层60将被蚀刻，不增加光罩即可得到与源漏金属走线70一一对应的绝缘隔道62，降低生产成本。
可以理解的是，较宽的沟道61可以更好的形成弯曲应力集中区，利用源漏金属作为层间绝缘层60的蚀刻掩膜板，从而保证绝缘隔道62的绝缘效果和氢化功能的同时，减小绝缘隔道62的宽度，从而增加沟道61的宽度，从而使沟道61更好的形成弯曲应力集中区。
在所述步骤S63中，蚀刻完成后，保留位于源漏金属走线70上的光刻胶，利用光刻胶作为蚀刻层间绝缘层60的第二层掩膜层。对层间绝缘层60进行蚀刻时，通过第二层掩膜板对源漏金属走线70起到保护隔绝作用，防止蚀刻工艺对源漏金属走线70造成影响或损坏，同时无需增加光刻工艺，减少工序，降低生产成本。
如图9所示，在第二金属层上形成覆盖第二金属层和层间绝缘层60的平坦层80，在所述平坦层80上形成发光层90和封装层后，从而形成显示装置。
本发明的有益效果为：通过在层间绝缘层60上开设沟道61，保证层间绝缘层60的绝缘返回和氢化功能的前提下，采用图形化的层间绝缘层60取代现有的整面性的膜层结构，使沟道61成为面板弯曲时形变发生的主要区域，提高显示装置在弯曲应力下的可靠性，同时防止层间绝缘层60在弯曲应力下产生裂纹及裂纹扩展导致薄膜晶体管器件的失效。同时利用源漏金属走线70作为层间绝缘层60和光刻胶的蚀刻掩膜板，无需增加光罩即可得到与源漏金属走线70一一对应的绝缘隔道62，使沟道61可以更好的形成弯曲应力集中区的同时，降低生产成本。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (13)

  1. 一种柔性显示装置，其中，所述柔性显示装置包括：
    柔性衬底；
    设置于所述柔性衬底表面的有源层；
    设置于所述柔性衬底上且覆盖所述有源层的栅极绝缘层；
    设置于所述栅极绝缘层上的栅极金属层；
    设置于所述栅极绝缘层上且覆盖所述栅极金属层的层间绝缘层；
    设置于所述层间绝缘层上的第二金属层；
    设置于所述栅极绝缘层且覆盖所述层间绝缘层和所述第二金属层的平坦层；
    设置于所述平坦层上的发光层和封装层；
    其中，所述层间绝缘层上开设有多条沟道，所述沟道两端向所述层间绝缘层边缘延伸以贯穿所述层间绝缘层；位于所述第二金属层下方的层间绝缘层在竖向上的投影包纳所述第二金属层在竖向上的投影；所述沟道深度不小于所述层间绝缘层厚度；所述沟道将层间绝缘层分割为多条绝缘隔道，所述绝缘隔道的纵截面呈正梯形。
  2. 根据权利要求1所述的柔性显示装置，其中，所述第二金属层包括多条源漏金属走线，所述绝缘隔道与所述源漏金属走线一一对应。
  3. 根据权利要求1所述的柔性显示装置，其中，所述柔性衬底包括第一柔性基板，以及依次层叠设置在第一柔性基板上的第一阻隔层、第二柔性基板和第二阻隔层。
  4. 一种柔性显示装置，其中，所述柔性显示装置包括：
    柔性衬底；
    设置于所述柔性衬底表面的有源层；
    设置于所述柔性衬底上且覆盖所述有源层的栅极绝缘层；
    设置于所述栅极绝缘层上的栅极金属层；
    设置于所述栅极绝缘层上且覆盖所述栅极金属层的层间绝缘层；
    设置于所述层间绝缘层上的第二金属层；
    设置于所述栅极绝缘层且覆盖所述层间绝缘层和所述第二金属层的平坦层；
    设置于所述平坦层上的发光层和封装层；
    其中，所述层间绝缘层上开设有多条沟道，所述沟道两端向所述层间绝缘层边缘延伸以贯穿所述层间绝缘层；位于所述第二金属层下方的层间绝缘层在竖向上的投影包纳所述第二金属层在竖向上的投影。
  5. 根据权利要求4所述的柔性显示装置，其中，所述沟道深度不小于所述层间绝缘层厚度。
  6. 根据权利要求4所述的柔性显示装置，其中，所述沟道将层间绝缘层分割为多条绝缘隔道，所述绝缘隔道的纵截面呈正梯形。
  7. 根据权利要求6所述的柔性显示装置，其中，所述第二金属层包括多条源漏金属走线，所述绝缘隔道与所述源漏金属走线一一对应。
  8. 根据权利要求4所述的柔性显示装置，其中，所述柔性衬底包括第一柔性基板，以及依次层叠设置在第一柔性基板上的第一阻隔层、第二柔性基板和第二阻隔层。
  9. 一种柔性显示装置的制备方法，其中，所述方法包括：
    S10、在承载基板上形成柔性衬底；
    S20、在所述柔性衬底上形成图形化的有源层；
    S20、在所述柔性衬底上形成覆盖所述有源层的栅极绝缘层；
    S40、在所述栅极绝缘层上形成栅极金属层；
    S50、在所述栅极绝缘层上形成覆盖所述栅极金属层的层间绝缘层；
    S60、在所述层间绝缘层上形成图案化的第二金属层；
    S70、通过蚀刻工艺在所述层间绝缘层上形成沟道；
    S80、在第二金属层上形成覆盖第二金属层和层间绝缘层的平坦层；
    S90、在所述平坦层上形成发光层和封装层。
  10. 根据权利要求9所述的柔性显示装置的制备方法，其中，在步骤S50中，形成层间绝缘层时，并形成金属电极过孔。
  11. 根据权利要求9所述的柔性显示装置的制备方法，其中，所述S60包括：
    S61、在所述层间绝缘层上形成第二金属层；
    S62、在所述第二金属层上涂布光刻胶层，对光刻胶层进行曝光、显影，以形成图案化的光刻胶层；
    S63、对第二金属层进行蚀刻，形成图案化的第二金属层。
  12. 根据权利要求11所述的柔性显示装置的制备方法，其中，在步骤S70中，通过蚀刻层间绝缘层形成沟道时，利用源漏金属走线作为第一层掩膜板。
  13. 根据权利要求12所述的柔性显示装置的制备方法，其中，在步骤S63中，第二金属层蚀刻完成后，保留位于源漏金属走线上的光刻胶，利用光刻胶作为蚀刻层间绝缘层的第二层掩膜板。
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