WO2020019421A1 - Led背光装置及led显示装置 - Google Patents

Led背光装置及led显示装置 Download PDF

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Publication number
WO2020019421A1
WO2020019421A1 PCT/CN2018/104985 CN2018104985W WO2020019421A1 WO 2020019421 A1 WO2020019421 A1 WO 2020019421A1 CN 2018104985 W CN2018104985 W CN 2018104985W WO 2020019421 A1 WO2020019421 A1 WO 2020019421A1
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WIPO (PCT)
Prior art keywords
led
backlight
pad
positive
negative
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PCT/CN2018/104985
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English (en)
French (fr)
Inventor
马长文
查国伟
张洲
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武汉华星光电技术有限公司
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Application filed by 武汉华星光电技术有限公司 filed Critical 武汉华星光电技术有限公司
Priority to US16/309,743 priority Critical patent/US11092849B2/en
Publication of WO2020019421A1 publication Critical patent/WO2020019421A1/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133605—Direct backlight including specially adapted reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133612—Electrical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the invention relates to the field of display devices, in particular, Mini-LED and the like, and in particular to an LED backlight device and an LED display device.
  • Organic light emitting diode display device (Organic Light Emitting Display, OLED) has the characteristics of self-luminous, no backlight, thin thickness, wide viewing angle, fast response, etc., so it has the natural advantages of flexible display.
  • OLED Organic Light Emitting Display
  • traditional liquid crystal display technology has gradually adopted flexible substrates to make breakthroughs in flexibility, curved surfaces, etc. It can be seen that the era of flexible and curved display is approaching.
  • Mini-LED also known as "sub-millimeter light-emitting diodes" means LEDs with a grain size of about 100 microns, and Mini-LEDs use direct-type backlighting, which is also one of the development directions. Due to the huge number of LEDs used in a single-chip backlight display device, in order to achieve excellent display effects, the number of backlight partitions can be hundreds or thousands, and due to the development of the full screen of mobile phones, the small-sized mini-LEDs used are smaller. The distance can be arranged to obtain a smaller light mixing distance, which provides greater possibilities for small, direct-type backlights to be light, thin, and narrow.
  • mini-LED surface light sources Similar to traditional side-type backlights, mini-LED surface light sources also need to adopt BEF brightness enhancement films, reflectors and other structures to improve the front brightness. The difference is that the side-type backlight is attached to the entire surface of the reflective sheet at the bottom of the light guide plate, which can greatly improve the light reflection efficiency of the system.
  • the mini-LED direct-type backlight uses a large number of LED arrays. The LED itself and the LED bonding pad itself will To form a non-reflective body with a large area ratio, LEDs and LEDs are usually covered with high reflectivity white oil or other highly reflective materials. Its overall reflection efficiency.
  • FIG. 1 is a circuit design diagram of a single backlight partition of an existing mini-LED backlight substrate.
  • the stripe portion is a metal trace
  • the frame portion of the metal trace is a window area of a pad of the circuit pad.
  • the black area in the box is the solder paste coating area.
  • the size of the pads is different, there may be a gap (GAP) between the reflective material and the pad, or it may cover the P / N pad of the mini-LED, which affects the electrical properties, and considering the error in advance, it will also The gap (GAP) between the reflective material and the pad becomes larger, causing the light efficiency of the mini-LED display screen to be weak and the light energy unavoidable to be lost.
  • the mini-LED itself is relatively small. Taking into account the errors in advance, there will still be problems in solder paste printing and die bonding. None of the above can be solved simply by improving the etching accuracy in each process.
  • the technical problem to be solved by the present invention is to provide an LED backlight device and an LED display device, which can effectively optimize the manufacturing process by improving the metal wiring design on the backlight substrate, reduce the manufacturing process error, and effectively improve the solder paste and solid
  • the yield of the crystal and the increase of the light reflectivity reduce the loss of light energy and improve the light efficiency.
  • the present invention provides a backlight substrate provided with a plurality of backlight partitions; a reflective material layer covering one surface of the backlight substrate; a metal wiring line provided in the backlight partition and located in the backlight partition; Between the backlight substrate and the reflective material layer; a plurality of pads open windows that run from the surface of the reflective material layer to the surface of the metal traces, and each pad opens a window on the backlight substrate.
  • the orthographic projection completely falls into the metal trace; and several solder paste coating areas are respectively located in the corresponding pad opening windows.
  • the metal wiring includes: at least a pair of positive and negative leads, and the same pair of the positive and negative leads are adjacent and parallel to each other; a positive connecting line, the positive lead is connected To the positive connection line; and a negative connection line, the negative lead is connected to the negative connection line.
  • a plurality of pairs of window openings are formed on each of the pads, and each pair of window openings of the pads includes: a positive pad opening window corresponding to the positive lead; a negative pad opening window corresponding to On the negative lead.
  • the LED backlight device further includes: a plurality of LED chips, each of which has a P pole and an N pole; and a plurality of pads respectively fixed to the P pole and the LED chip. N pole; a pad fixed on the P pole of the LED chip opens the window corresponding to the positive pad, and a pad fixed on the N pole of the LED chip opens the window corresponding to the negative pad.
  • the width of the opening window of the gasket is smaller than the width of the positive lead or the negative lead.
  • the gap width between the adjacent positive lead and the negative lead is 40-60um.
  • the backlight substrate is a flexible circuit board or a printed circuit board.
  • the distribution structure of the backlight partitions is a matrix structure.
  • a gap distance between two adjacent backlight partitions is 40-70um.
  • the invention also discloses an LED display device including the LED backlight device.
  • the invention has the advantages that the LED display device assembled by the LED backlight device of the invention can effectively optimize the manufacturing process by improving the metal wiring design on the backlight substrate, reduce the manufacturing process error, and effectively improve the solder paste and solid crystal. Yield and increase the reflectivity of light, reduce the loss of light energy, and improve light efficiency.
  • FIG. 1 is a circuit design diagram of a single backlight partition of a conventional backlight substrate, which mainly shows a distribution diagram of metal traces and pad openings.
  • FIG. 2 is a schematic diagram of backlight partitions on a backlight substrate of an LED backlight device according to an embodiment of the present invention.
  • FIG. 3 is a circuit design diagram of a single backlight partition according to an embodiment of the present invention, in which a metal wiring line and a pad opening window distribution diagram are mainly shown.
  • FIG. 4 is a cross-sectional view of a metal wiring corresponding to a single LED chip of the present invention.
  • FIG. 5 is a layered structure diagram of an LED display device according to an embodiment of the present invention.
  • Negative electrode pad opens the window; 132 solder paste coating area;
  • 6Second electrode layer The second electrode layer 7 color filters;
  • the LED backlight device 1 of the present invention includes a backlight substrate 11, metal traces 12, a reflective material layer 13, a plurality of LED chips 14, and a pad 15.
  • the backlight substrate 11 is provided with a plurality of backlight partitions 10.
  • the size and number of the backlight partitions 10 are specifically designed according to the size parameters of the actual backlight substrate and the display screen.
  • the distribution structure of the backlight partitions 10 is a matrix structure. In order to ensure less light energy loss, that is, to prevent less light from seeping through the gap between the backlight partitions 10, this embodiment will The gap between the backlight partitions 10 is set to 40-70um. In order to cooperate with the process construction and reduce the difficulty of process construction, the gap can be specifically set to 55um or 60um.
  • the backlight substrate 11 may be a flexible circuit board or a printed circuit board according to the type of the display screen.
  • the metal wiring 12 is disposed in each backlight partition 10 (see FIG. 2 for reference numerals).
  • the metal trace 12 is etched on a surface of the backlight substrate 11 by an etching machine.
  • the metal wiring 12 is divided into a positive wiring and a negative wiring.
  • the positive wiring includes at least one positive wiring 121 and a positive connection 122
  • the negative wiring includes at least one negative wiring 123 and one negative wiring.
  • the metal wiring 12 is provided with a plurality of positive lead wires 121 and a plurality of negative lead wires 123.
  • Each positive lead wire 121 is spaced apart from and parallel to one negative lead wire 123. Therefore, adjacent positive lead wires 121 and The negative lead 123 forms a pair.
  • One end of each positive lead 121 is connected to a positive connection 122
  • one end of each negative lead 123 is connected to a negative connection 124.
  • the gap width between the adjacent positive lead 121 and negative lead 123 is 40 -60um, preferably 50um.
  • the width of the gap between the positive lead 121 and the negative connecting line 124 is also set to 40-60um, preferably 50um.
  • the gap width between the negative lead 123 and the positive connecting line 122 is also set to 40-60um, preferably 50um.
  • the reflective material layer 13 is formed by covering the surface of the backlight substrate 11 with the reflective material after the metal trace 12 is etched. Therefore, the metal trace 12 is located between the backlight substrate 11 and the reflective material layer 13. After that, a plurality of cushion opening windows 1311 and 1312 are opened on the reflective material layer 13.
  • the positions of the opening windows 1311 and 1312 of each pad correspond to the positions of the metal wires 12. That is, each of the pad opening windows 1311 and 1312 penetrates from the surface of the reflective material layer 13 to the surface of the metal wiring 12, and the pad opening windows 1311 and 1312 are on the backlight substrate 11.
  • the orthographic projection completely falls on the metal trace 12 without exceeding the metal trace 12.
  • the width of each of the gasket opening windows 1311 and 1312 is smaller than the width of the corresponding positive lead 121 or negative lead 123.
  • each pad opening window 1311, 1312 has a solder paste coating area 132, and the solder paste coating area 132 is coated with solder paste for subsequent solid crystal bonding.
  • the pad opening windows 1311 and 1312 can form multiple pairs.
  • the number of the pad opening windows 1311 and 1312 is set according to the number of the LED chips 14.
  • Each pair of pad opening windows includes a positive pad opening window 1311 and a negative pole.
  • the rest of the area of the backlight substrate 11 can be covered by a reflective material except for the liner opening windows 1311 and 1312, which can effectively improve the The light reflection at the pad 15 and the metal trace 12 covering the backlight substrate 11 to the maximum extent can effectively reduce the light transmission and improve the light efficiency.
  • the LED backlight device 1 further includes a plurality of LED chips 14 and a plurality of pads 15.
  • FIG. 4 it only shows a cross-sectional view of a circuit corresponding to a single LED chip 14.
  • a pad 15 is fixed to the P and N poles of each LED chip 14; when the crystal is fixed, the pad 15 fixed to the P pole of the LED chip 14 corresponds to the positive electrode The pad opens a window 1311, and the pad 15 fixed on the N pole of the LED chip 14 corresponds to the negative pad opening 1312.
  • the pad opening windows 1311 and 1312 can always be on the line electrode, for example, on the positive lead 121 or the negative lead 123, and each pad opens windows 1311 and 1312.
  • the size can be basically guaranteed, which is conducive to the flatness and yield of the solid crystal.
  • the LED chip 14 selects materials for making LEDs according to process requirements, so that the LEDs emit corresponding colors. Currently, three colors of red, green and blue are widely used. Regardless of whether the LED is used to make a single-color, dual-color, or tri-color screen, the brightness of each LED that constitutes a pixel can be adjusted to display an image. The higher the degree of fineness of the adjustment, the higher the gray level and the more delicate the displayed image , The richer the color.
  • the structure of the LED display device of the present invention will be described below using the LED liquid crystal display device as an example.
  • the LED display device of the present invention includes the LED backlight device 1, the first polarizer 2, the first glass substrate 3, the first electrode layer 4, the liquid crystal molecular layer 5, The second electrode layer 6, the color filter 7, the second glass substrate 8 and the second polarizer 9.
  • the first polarizer 2 and the second polarizer 9 are opposite to each other and are located on the LED backlight device 1.
  • the first glass substrate 3 and the second glass substrate 8 are opposite to each other and are located on the first polarizer 2 and the second polarizer.
  • the first electrode layer 4 and the second electrode layer 6 are provided between the first glass substrate 3 and the second glass substrate 8, and the liquid crystal molecular layer 5 is provided between the first electrode layer 4 and the second electrode layer 6.
  • a color filter 7 is provided between the second glass substrate 8 and the second electrode layer 6.
  • the light emitted by the LED backlight device 1 passes through the first polarizer 2, the first glass substrate 3, the liquid crystal molecules 5, the color filter 7, the second glass substrate 8, and the second polarizer 9 in order. Since the focus of the present invention is on the LED backlight device 1 of the LED display device, the other components of the LED display device will not be described in detail.
  • the LED backlight device 1 of this embodiment can also be applied to other types of LED display devices.
  • the LED liquid crystal display device listed in this embodiment is only an explanation of the present invention, not a kind of the present invention. limit.

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  • Engineering & Computer Science (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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Abstract

一种LED背光装置(1)及LED显示装置，包括背光基板(11)，设有多个背光分区(10)；反光材料层(13)，覆于背光基板(11)的一表面；金属走线(12)，设于背光分区(10)中，且位于背光基板(11)和反光材料层(13)之间；衬垫开窗(1311, 1312 )，从反光材料层(13)的表面贯穿至金属走线(12)的表面，且衬垫开窗(1311,1312)朝向背光基板(11)的正投影完全落入金属走线(12)；焊锡膏涂布区(132)，位于衬垫开窗(1311,1312)中。LED背光装置(1)装配成的LED显示装置，有效提高了刷锡膏和固晶的良率以及提高了光的反射率，降低了光能的损失，改善了光效。

Description

LED背光装置及LED显示装置 技术领域
本发明涉及显示装置，特别是Mini-LED等领域，具体为一种LED背光装置及LED显示装置。
 背景技术
随着可穿戴应用设备，如智能眼镜、智能手表等的逐渐兴起，显示行业对可挠曲显示器件的需求也不断增加。有机发光二极管显示器件 (Organic Light Emitting Display，OLED) 具有自发光不需背光源、厚度薄、视角广、反应速度快等特点，从而具有可挠曲显示的天然优势。面对柔性OLED的竞争，传统的液晶显示技术也逐渐采用柔性衬底往柔性、曲面等方向进行突破，由此可见，柔性、曲面显示的时代即将来临。
Mini-LED又名“次毫米发光二极管”，意指晶粒尺寸约在100微米的LED，而Mini-LED采用直下式背光，也是其中一个发展方向。由于单片背光的显示装置上使用的LED数量巨大，为达到优异的显示效果，背光分区数量成百上千，并且由于手机全面屏的发展，采用的小尺寸的mini-LED以更小的档距进行排列可以获得较小的混光距离，为小尺寸的直下式背光源实现轻、薄、窄提供更大的可能性。与传统侧入式背光类似，mini-LED面光源也需要采用BEF增亮膜、反射片等结构以提升正面的亮度。不同点在于侧入式背光在导光板底部背贴整面的反射片，可以大大提升系统的光反射效率，而mini-LED直下式背光由于采用巨量LED阵列，LED本身及LED bonding pad本身会构成面积比例较大的非反射体，LED与LED之间通常会采用高反射率的白油或者其他高反射材料覆盖，整体从反射效率上低于侧入式整面反射片结构，因而影响了其整体反射效率。
如图1所示，图1为现有的mini-LED背光基板单个背光分区的线路设计图，条形部分为金属走线，金属走线上方框部分为线路衬垫（Pad）开窗区，方框部分内的黑色区为焊锡膏涂布区。背光基板在制作过程中，背光基材的涨缩、金属走线蚀刻还有反射材料的开窗均会产生不同程度的工艺误差，单个因素的误差最高可达50um，这可能导致开窗出来的焊盘大小不一，反射材料可能会与焊盘之间存在空白间隙（GAP），也可能覆盖mini-LED 的P/N衬垫（pad），从而影响电性，而提前考虑误差，又会使反射材料和焊盘之间的空白间隙（GAP）变的更大，造成mini-LED显示屏光效不强，光能不可避免的损失。同时mini-LED本身比较小，提前考虑误差依然会有锡膏印刷和固晶困难的问题，以上均无法单纯靠提高各制程中的刻蚀精度去解决。
 技术问题
本发明所要解决的技术问题是，提供一种LED背光装置及LED显示装置，能够通过改善背光基板上的金属走线设计，有效优化制程工艺，减少制程工艺的误差，有效提高刷锡膏和固晶的良率以及提高光的反射率，降低光能的损失，改善光效。
 技术解决方案
为解决上述技术问题，本发明提供了背光基板，设有多个背光分区；反光材料层，覆于所述背光基板的一表面；金属走线，设于所述背光分区中，且位于所述背光基板和所述反光材料层之间；若干个衬垫开窗， 从所述反光材料层的表面贯穿至所述金属走线的表面，且每一衬垫开窗在所述背光基板上的正投影完全落入所述金属走线；以及若干个焊锡膏涂布区，分别位于对应的衬垫开窗中。
在本发明一较佳实施例中，所述金属走线包括：至少一对正极导线和负极导线，同一对所述正极导线和负极导线相邻且相互平行；正极连接线，所述正极导线连接于所述正极连接线；以及负极连接线，所述负极导线连接于所述负极连接线。
在本发明一较佳实施例中，所述衬垫开窗形成有多对，每对所述衬垫开窗包括：正极衬垫开窗，对应所述正极导线；负极衬垫开窗，对应于所述负极导线。
在本发明一较佳实施例中，该LED背光装置还包括：多个LED芯片，每一芯片均具有P极和N极,；多个衬垫，分别固定于所述LED芯片的P极和N极；固定在所述LED芯片的P极上的衬垫对应于所述正极衬垫开窗，固定于所述LED芯片的N极上的衬垫对应于所述负极衬垫开窗。
在本发明一较佳实施例中，所述衬垫开窗的宽度小于所述正极导线或负极导线的宽度。
在本发明一较佳实施例中，相邻的正极导线与负极导线之间的空隙宽度为40-60um。
在本发明一较佳实施例中，所述背光基板为柔性电路板或印制电路板。
在本发明一较佳实施例中，所述背光分区的分布结构为矩阵结构。
在本发明一较佳实施例中，相邻的两个所述背光分区之间的空隙间距为40-70um。
本发明还公开了一种LED显示装置，包括所述的LED背光装置。
 有益效果
本发明的优点是：本发明的LED背光装置装配成的LED显示装置，通过改善背光基板上的金属走线设计，有效优化制程工艺，减少制程工艺的误差，有效提高刷锡膏和固晶的良率以及提高光的反射率，降低光能的损失，改善了光效。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
下面结合附图和实施例对本发明作进一步解释；
图1是现有的背光基板单个背光分区的线路设计图，其中主要表现出现有的金属走线和衬垫开窗分布图。
图2是本发明其中一实施例的LED背光装置的背光基板上背光分区示意图。
图3是本发明其中一实施例的单个背光分区的线路设计图，其中主要表现出金属走线和衬垫开窗分布图。
图4是本发明单个LED芯片对应金属走线的截面图。
图5是本发明实施例的LED显示装置的层状结构图。
其中，
1 LED背光装置；                   10背光分区；
11背光基板；                      12金属走线；
13反光材料层；                    14 LED芯片；
15衬垫；                          121正极导线；
122正极连接线；                   123负极导线；
124负极连接线；                   1311正极衬垫开窗；
1312负极衬垫开窗；                132焊锡膏涂布区；
2第一偏光片；                     3第一玻璃基板；
4第一电极层；                     5液晶分子；
6第二电极层；                     7彩色滤光片；
8第二玻璃基板；                   9第二偏光片。
 本发明的实施方式
下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
如图4所示，在其中一实施例中，本发明LED背光装置1包括背光基板11、金属走线12、反光材料层13、多个LED芯片14和衬垫15。
如图2所示，所述背光基板11设有多个背光分区10,背光分区10的尺寸和个数，根据实际的背光基板和显示屏的尺寸参数具体设计。本实施例中，背光分区10的分布结构为矩阵结构，为保证较少的光能损失，即避免较少的光从背光分区10之间的空隙中透出，本实施例将相邻的两个背光分区10之间的空隙间距设置为40-70um，为了配合工艺施工，减少工艺施工的难度，间距具体可设置为55um或60um。背光基板11根据显示屏的种类不同，可以选择柔性电路板或印制电路板等。
如图4所示，所述金属走线12设于每一个背光分区10（标号见图2）中。所述金属走线12利用蚀刻机蚀刻于所述背光基板11的一表面。
如图3所示，所述金属走线12分为正极走线和负极走线，正极走线包括至少一正极导线121和一个正极连接线122，负极走线包括至少一负极导线123和一个负极连接线124。本实施例中，所述金属走线12设有多条正极导线121和多条负极导线123，每一正极导线121均与一个负极导线123相互间隔且相互平行，因此相邻的正极导线121和负极导线123组成一对。其中，每一正极导线121的一端连接至正极连接线122，每一负极导线123的一端连接至负极连接线124。
为了使得所述金属走线12能够最大化分布在基板上，并使得衬垫开窗总能在对应的线路电极上，因此，相邻的正极导线121与负极导线123之间的空隙宽度为40-60um，优选为50um。同样的，在正极导线121与负极连接线124之间的空隙宽度也设置成40-60um，优选为50um。在负极导线123与正极连接线122之间的空隙宽度也设置成40-60um，优选为50um。
此外，还要求同一背光分区10中的所述金属走线12要最大化地分布在所述背光基板11上，而且同一背光基板11上的不同背光分区10之间也要使用同样的最小线路间距。由于金属走路的透光性不佳，采用此布局可以大大减少正面LED光线透射到背光基板11的背面。
如图4所示，所述反光材料层13是通过将反光材料在金属走线12蚀刻后覆于背光基板11的表面形成的。因此，所述金属走线12位于所述背光基板11和所述反光材料层13之间。之后，在反光材料层13上开设多个衬垫开窗1311、1312。
如图3、图4所示，每一衬垫开窗1311、1312的位置均对应所述金属走线12位置。即每一衬垫开窗1311、1312都是从所述反光材料层13的表面贯穿至所述金属走线12的表面，且所述衬垫开窗1311、1312在所述背光基板11上的正投影完全落入所述金属走线12上，而不会超出所述金属走线12。本实施例中，每一衬垫开窗1311、1312的宽度均小于对应的正极导线121或负极导线123的宽度。
如图3、图4所示，在每一衬垫开窗1311、1312中均具有一个焊锡膏涂布区132，在所述焊锡膏涂布区132中涂布焊锡膏以便后序的固晶。在本实施例中，所述衬垫开窗1311、1312能够组成多对，其数量的多少根据LED芯片14的个数设置，每对衬垫开窗包括一个正极衬垫开窗1311和一个负极衬垫开窗1312，其中所述正极衬垫开窗1311对应所述正极导线121；所述负极衬垫开窗1312对应于所述负极导线123。
可见，当所述背光基板11的表面被涂覆或贴覆反光材料后，除了衬垫开窗1311、1312，所述背光基板11的其余区域均能被反射材料覆盖，可以有效改善在所述衬垫15处的光的反射，而金属走线12最大限度的覆盖在所述背光基板11上，可以有效减少光的透射，提高光效。
所述的LED背光装置1还包括多个LED芯片14和多个衬垫15。
如图4所示，其仅表现出单颗LED芯片14对应线路的截面图。在本实施例中，在每一LED芯片14的P极和N极均固定有一个衬垫15；固晶时，固定在所述LED芯片14的P极上的衬垫15对应于所述正极衬垫开窗1311，而固定在所述LED芯片14的N极上的衬垫15对应于所述负极衬垫开窗1312。
在正常的工艺误差范围内，所述衬垫开窗1311、1312总能在线路电极上，例如，在所述正极导线121或所述负极导线123上，而且每个衬垫开窗1311、1312基本可以保证大小一致，这样有利于固晶的平整性与良率。所述LED芯片14根据工艺要求选择制作LED的材料，使其对应发出相应的颜色，目前，广泛使用红绿蓝三种颜色。无论用LED制作单色、双色或三色屏，欲显示图像需要构成像素的每个LED的发光亮度都能够调节，调节的精细程度越高，其灰度等级越高，显示的图像就越细腻，色彩越丰富。
下面将以LED液晶显示装置为例介绍本发明LED显示装置的构造。
如图5所示，在其中一实施例中，本发明LED显示装置包括所述的LED背光装置1、第一偏光片2、第一玻璃基板3、第一电极层4、液晶分子层5、第二电极层6、彩色滤光片7、第二玻璃基板8和第二偏光片9。其中，第一偏光片2和第二偏光片9相对设置，且位于所述LED背光装置1上，第一玻璃基板3、第二玻璃基板8相对设置，位于第一偏光片2和第二偏光片9之间，第一电极层4和第二电极层6设于第一玻璃基板3和第二玻璃基板8之间，液晶分子层5设于第一电极层4和第二电极层6之间，彩色滤光片7设于第二玻璃基板8和第二电极层6之间。所述LED背光装置1发出的光依次经过第一偏光片2、第一玻璃基板3、液晶分子5、彩色滤光片7、第二玻璃基板8和第二偏光片9后透出。由于本发明的重点在于LED显示装置的LED背光装置1，因此对于LED显示装置其他构件就不在一一赘述。
当然，本实施例的LED背光装置1还可以应用到其他种类的LED显示装置中，本实施例中所列举的LED液晶显示装置仅仅是对本发明的一种解释说明，而不是对本发明的一种限制。
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种LED背光装置，其包括
    背光基板，设有多个背光分区；
    反光材料层，覆于所述背光基板的一表面；
    金属走线，设于所述背光分区中，且位于所述背光基板和所述反光材料层之间；
    若干个衬垫开窗， 从所述反光材料层的表面贯穿至所述金属走线的表面，且每一衬垫开窗在所述背光基板上的正投影完全落入所述金属走线；以及
    若干个焊锡膏涂布区，分别位于对应的衬垫开窗中。
  2. 根据权利要求1所述的LED背光装置，其中，所述金属走线包括：至少一对正极导线和负极导线，同一对所述正极导线和负极导线相邻且相互平行；
    正极连接线，所述正极导线连接于所述正极连接线；以及
    负极连接线，所述负极导线连接于所述负极连接线。
  3. 根据权利要求2所述的LED背光装置，其中，所述衬垫开窗形成有多对，每对所述衬垫开窗包括：
    正极衬垫开窗，对应所述正极导线；
    负极衬垫开窗，对应于所述负极导线。
  4. 根据权利要求3所述的LED背光装置，其中，该LED背光装置还包括：
    多个LED芯片，每一芯片均具有P极和N极,；
    多个衬垫，分别固定于所述LED芯片的P极和N极；
    固定在所述LED芯片的P极上的衬垫对应于所述正极衬垫开窗，固定于所述LED芯片的N极上的衬垫对应于所述负极衬垫开窗。
  5. 根据权利要求4所述的LED背光装置，其中，每一衬垫开窗的宽度均小于对应的正极导线或负极导线的宽度。
  6. 根据权利要求2所述的LED背光装置，其中，相邻的正极导线与负极导线之间的空隙宽度为40-60um。
  7. 根据权利要求1所述的LED背光装置，其中，所述背光基板为柔性电路板或印制电路板。
  8. 根据权利要求1所述的LED背光装置，其中，所述背光分区的分布结构为矩阵结构。
  9. 根据权利要求8所述的LED背光装置，其中，相邻的两个所述背光分区之间的空隙间距为40-70um。
  10. 一种LED显示装置，其中，包括如权利要求1所述的LED背光装置。
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