WO2020004619A1 - スパッタ成膜装置 - Google Patents

スパッタ成膜装置 Download PDF

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Publication number
WO2020004619A1
WO2020004619A1 PCT/JP2019/025800 JP2019025800W WO2020004619A1 WO 2020004619 A1 WO2020004619 A1 WO 2020004619A1 JP 2019025800 W JP2019025800 W JP 2019025800W WO 2020004619 A1 WO2020004619 A1 WO 2020004619A1
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Prior art keywords
sputtering
target
magnet
film forming
forming apparatus
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Application number
PCT/JP2019/025800
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English (en)
French (fr)
Japanese (ja)
Inventor
弘敏 阪上
哲宏 大野
Original Assignee
株式会社アルバック
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Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to KR1020207015923A priority Critical patent/KR102351170B1/ko
Priority to CN201980006240.3A priority patent/CN111417741B/zh
Priority to JP2020527680A priority patent/JP6959447B2/ja
Publication of WO2020004619A1 publication Critical patent/WO2020004619A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields

Definitions

  • the present invention relates to a sputtering apparatus, and more particularly, to a technique of a sputtering film forming apparatus for forming a film by magnetron sputtering.
  • a magnetic field generated on a sputtering target (hereinafter, appropriately referred to as a “target”) is not uniform due to the structure of a magnet apparatus for generating a magnetic field. Is concentrated, and there is a problem that the portion is cut faster than a portion having a low magnetic flux density.
  • the present invention has been made in view of such problems of the related art, and has as its object to suppress the generation of a non-erosion region in the outer peripheral portion of a sputtering target when performing film formation by magnetron sputtering. It is to provide a technology that can do it.
  • the present invention made to achieve the above object is a sputter film forming apparatus that forms a film on one film formation object by a magnetron sputtering method in a vacuum, and a sputtering surface is formed on one sputtering target.
  • the magnet device for magnetron generation which is arranged on the opposite side and moves in the direction along the sputtering surface of the sputtering target at the time of discharge, and the inner shield portion which is arranged close to the periphery of the outer periphery of the sputtering target and has a floating potential
  • This is a sputter film forming apparatus having an outer shield portion provided around the inner shield portion and made of a conductive material at a ground potential.
  • the present invention is the sputter film forming apparatus, wherein the inner shield portion is provided with an overlapping portion that covers the sputtering surface of the sputtering target.
  • the present invention is the sputtering film forming apparatus, wherein the overlapping portion of the inner shield portion is provided over the entire outer peripheral portion of the sputtering surface of the sputtering target.
  • the present invention is the sputter film forming apparatus, wherein the overlapping portion of the inner shield portion is provided so as to overlap a pair of corners of the sputtering target formed in a rectangular shape.
  • the present invention is the sputter film forming apparatus, wherein the inner shield part is provided with a protruding part protruding in a direction of a sputter surface of the sputtering target.
  • the present invention is the sputter film forming apparatus, wherein the overhang portion of the inner shield portion is provided over the entire outer peripheral portion of the sputtering surface of the sputtering target.
  • the present invention is the sputter film forming apparatus, wherein the overhanging portion of the inner shield portion is provided at a pair of opposed corners of the rectangularly formed sputtering target.
  • the present invention is the sputtering film forming apparatus, wherein the sputtering target is formed so that its outer diameter is larger than the outer diameter of the object to be formed.
  • the plasma generated at the time of discharge and captured by the magnetic field of the magnet device is blocked by the inner shield portion which is disposed close to the outer periphery of the target and has a floating potential, so that the periphery of the inner shield portion is And is prevented from reaching and contacting the outer shield portion made of a conductive material set to the ground potential.
  • the disappearance of the plasma due to the charge of the ions in the plasma coming into contact with the outer shield portion at the ground potential is avoided, so that the plasma reaches the outer peripheral portion of the sputtering surface of the target. Accordingly, the generation of a non-erosion region in the outer peripheral portion of the sputtering surface of the target can be suppressed, so that a decrease in film-forming characteristics due to the separation of sputter particles adhered to the non-erosion region of the target can be prevented.
  • the overlapping portion causes the plasma to be generated. Since it is possible to more reliably prevent the non-erosion region from reaching the outer shield portion, it is possible to further suppress the occurrence of a non-erosion region on the outer peripheral portion of the sputtering surface of the target due to the disappearance of the plasma and to reduce the non-erosion region. At the same time, it is possible to prevent the sputtered particles from adhering to the non-erosion region of the target, so that it is possible to further prevent a decrease in the film forming characteristics due to the separation of the sputtered particles.
  • the ability to prevent plasma from reaching the outer shield portion and the non-erosion of sputtered particles of the target Since the ability to prevent adhesion to the region can be improved, the generation of the non-erosion region on the sputtering surface of the target due to the disappearance of the plasma can be suppressed over the entire outer peripheral portion of the target, and the non-erosion region can be reduced. At the same time, the attachment of sputter particles to the non-erosion region of the target can be prevented over the entire outer peripheral portion of the sputtering surface of the target.
  • the overlapping portion of the inner shield portion is provided so as to overlap with a pair of opposing corner portions of the target formed in a rectangular shape, or a pair of opposing portions of the target in which the overhang portion is formed in a rectangular shape.
  • the corner for example, when the trajectory of the plasma partially protrudes from the target at a pair of corners of the target, it is possible to reliably generate the non-erosion region on the outer peripheral portion of the sputtering surface of the target and It can be suppressed more effectively with a small amount of material.
  • FIG. 1A and 1B show a first example of a sputtering film forming apparatus according to the present invention, wherein FIG. 1A is a partial cross-sectional view showing an internal configuration, and FIG. Plan view showing configuration (A) and (b): This shows a second example of the sputter film forming apparatus according to the present invention.
  • FIG. 2 (a) is a partial cross-sectional view showing an internal configuration, and FIG. Plan view showing configuration (A) and (b): diagrams for explaining the purpose of the third example of the sputter film forming apparatus according to the present invention
  • FIG. 4 is a plan view showing an internal configuration of a main part of a third example of the sputtering film forming apparatus.
  • FIG. 5A and 5B show a fourth example of a sputtering film forming apparatus according to the present invention.
  • FIG. 5A is a partial cross-sectional view showing an internal configuration
  • FIG. Plan view showing configuration 5 is a plan view showing the internal configuration of a fifth example of the sputter film forming apparatus according to the present invention.
  • the top view which shows the internal structure of the principal part of the example of the sputter film-forming apparatus using the same several magnet apparatus.
  • FIGS. 1A and 1B show a first example of a sputter film forming apparatus according to the present invention.
  • FIG. 1A is a partial cross-sectional view showing an internal configuration
  • FIG. FIG. 4 is a plan view showing the internal configuration of the unit.
  • the sputter film forming apparatus 1 of this example is of a magnetron sputtering type, and has a vacuum chamber 2 at a ground potential as described later.
  • the vacuum chamber 2 is connected to a vacuum pumping device 3 for evacuating the vacuum chamber 2 and introducing a sputtering gas such as an argon (Ar) gas into the vacuum chamber 2. It is connected to a possible sputtering gas source 4.
  • a sputtering gas such as an argon (Ar) gas
  • a substrate (film formation target) 6 held by a substrate holder 5 is arranged in the vacuum chamber 2, and a target 7 attached to a backing plate 8 is opposed to the substrate 6. Is provided.
  • the target 7 is formed such that its outer diameter is larger than the outer diameter of the substrate 6. Further, the outer diameter of the backing plate 8 is set to be larger than the outer diameter of the target 7.
  • This target 7 is made of, for example, a metal or a metal oxide, and is arranged such that a sputter surface 7 a exposed and sputtered in the vacuum chamber 2 faces the substrate 6.
  • the backing plate 8 is attached to the wall surface of the vacuum chamber 2 via an insulator 8a, whereby the backing plate 8 is electrically insulated from the vacuum chamber 2.
  • the backing plate 8 is electrically connected to the power supply device 9, and is configured to apply a predetermined power (voltage) to the target 7 via the backing plate 8.
  • the type of power applied from the power supply device 9 to the target 7 is not particularly limited, and may be DC or AC (including high-frequency and pulse-like).
  • An inner shield portion 21 and an outer shield portion 22 described below are provided around the outer peripheral portion of the target 7 (backing plate 8).
  • the inner shield part 21 and the outer shield part 22 of this example are provided so as to surround the target 7 and the backing plate 8, respectively.
  • the inner shield portion 21 is made of an insulating material such as aluminum oxide (Al 2 O 3 ) or a conductive metal material such as titanium (Ti), aluminum (Al) or stainless steel. (Backing plate 8).
  • the inner shield part 21 is insulated from other parts in the vacuum chamber 2 and is set so that its potential becomes a floating potential.
  • the inner shield part 21 of this example is formed in a rectangular frame shape (see FIG. 1B), and its tip (the upper part shown in FIG. 1A) is closer to the substrate 6 than the sputtering surface 7a of the target 7. And the distance to the inner wall 2a of the vacuum chamber 2 on the side of the magnet device 10 described later is larger than the distance to the sputtering surface 7a.
  • the outer shield part 22 is made of a material such as a conductive metal such as titanium (Ti), aluminum (Al), and stainless steel, and is provided around the inner shield part 21.
  • the outer shield part 22 of the present example is formed in a rectangular frame shape (see FIG. 1B), and its tip (the upper part shown in FIG. 1A) is closer to the substrate than the sputtering surface 7a of the target 7.
  • the distance from the vacuum chamber 2 to the inner wall 2a of the vacuum chamber 2 on the side of the magnet device 10 described later is greater than the distance to the sputtering surface 7a.
  • the outer shield part 22 is set to a ground potential together with, for example, the vacuum chamber 2 and serves as a so-called earth shield for guiding sputtered particles to the substrate 6.
  • a magnet device 10 is provided on the back side of the backing plate 8. As shown in FIGS. 1A and 1B and FIG. 3A to be described later, a magnet device 10 includes a center magnet 11 installed in a direction for generating a magnetic field on a sputtering surface 7 a of a target 7, and a center magnet 11. And an outer peripheral magnet 12 installed in a continuous shape around the periphery 11.
  • the center magnet 11 is disposed, for example, in a rectangular shape on a magnet fixing plate 13 parallel to the backing plate 8, and the outer peripheral magnet 12 is formed in an annular shape on the magnet fixing plate 13 at a predetermined distance from the periphery of the center magnet 11. It is arranged so as to surround the center magnet 11.
  • the annular outer peripheral magnet 12 surrounding the center magnet 11 does not necessarily mean one seamless annular shape. That is, as long as the shape surrounds the periphery of the center magnet 11, it may be composed of a plurality of components, or may have a linear shape at a certain portion. Further, it may be a closed ring or a shape in which the ring is deformed while being closed (in this example, a rectangular shape is shown).
  • the dimensions of the magnet device 10 of the present embodiment are set such that the outer diameter of the outer peripheral magnet 12 (magnet fixing plate 13) is smaller than the outer diameter of the target 7.
  • the outer peripheral magnet 12 and the center magnet 11 are arranged with magnetic poles of different polarities facing each other. That is, the center magnet 11 and the outer peripheral magnet 12 are arranged so that magnetic poles having different polarities are directed to the sputtering surface 7 a of the target 7.
  • a moving device 14 such as an XY stage is disposed on the back side of the magnet fixing plate 13 of the magnet device 10, and the magnet device 10 is attached to the moving device 14.
  • the moving device 14 is connected to the control unit 15, and in accordance with a control signal from the control unit 15, moves the magnet device 10 in a direction orthogonal to the direction (longitudinal direction) in which the center magnet 11 extends along the sputter surface 7 a of the target 7. It is configured to reciprocate.
  • control unit 15 controls the magnet device 10 to position the entire outer peripheral portion of the outer peripheral magnet 12 inside the outer peripheral portion of the sputtering surface 7a of the target 7 and a part of the outer peripheral portion of the outer peripheral magnet 12 (this example). in portions 12 1 and 12 2 in the movement direction of the magnet system 10) is configured to reciprocally move between a position protruding outside the outer peripheral portion of the sputtering surface 7a of the target 7 (FIGS. 1 (a) reference).
  • the magnet device 10 is configured such that the entire outer peripheral part of the outer peripheral magnet 12 is located inside the inner peripheral part of the inner shield part 21 surrounding the periphery of the sputtering surface 7 a of the target 7. And a position where a part of the outer peripheral portion of the outer peripheral magnet 12 (parts 12 1 and 12 2 on the movement direction side of the magnet device 10 in this example) protrudes outward from the inner peripheral portion of the inner shield portion 21. It is configured to move between and.
  • the inside of the vacuum chamber 2 is evacuated, a sputtering gas is introduced into the vacuum chamber 2, and the backing A predetermined negative voltage is applied to the target 7 via the plate 8.
  • the magnet device 10 is moved to a position where the entire outer peripheral portion of the outer peripheral magnet 12 enters the inner peripheral portion of the inner shield portion 21 surrounding the periphery of the sputtering surface 7a of the target 7, and Is reciprocated between a position where a part of the outer peripheral portion protrudes from the inner peripheral portion of the inner shield portion 21 toward the outer peripheral portion.
  • a negative voltage is applied to the target 7, and ions of the sputtering gas collide with the sputtering surface 7 a of the target 7 having a negative potential and repel particles of the target material (sputter particles).
  • the sputtered particles reach and adhere to the surface of the substrate 6 described above, and a film of a target material is formed on the substrate 6.
  • the plasma of the sputter gas generated at the time of discharge and captured by the magnetic field by the magnet device 10 is disposed close to the periphery of the outer periphery of the target 7 and has a floating potential. Since the inner shield portion 21 is cut off, the outer shield portion 22 formed around the inner shield portion 21 and made of a conductive material set to the ground potential is prevented from reaching and contacting.
  • the disappearance of the plasma due to the contact of the charges of the ions in the plasma with the outer shield portion 22 at the ground potential is avoided, so that the plasma reaches the outer peripheral portion of the sputtering surface 7a of the target 7.
  • it is possible to suppress the generation of a non-erosion region in the outer peripheral portion of the sputtering surface 7a of the target 7, and to prevent a decrease in film forming characteristics due to the separation of sputter particles attached to the non-erosion region of the target 7. can do.
  • FIG. 2 (a) and 2 (b) show a second example of the sputter film forming apparatus according to the present invention.
  • FIG. 2 (a) is a partial sectional view showing the internal configuration
  • FIG. FIG. 3 is a plan view showing the internal configuration of the unit.
  • portions corresponding to those in the first example are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the sputter film forming apparatus 1A of the present example has an inner shield portion 21A provided with an overlapping portion 21a that covers the sputter surface 7a of the target 7. I have.
  • the overlapping portion 21a of the inner shield portion 21A is formed in a rectangular frame shape having a slight gap with respect to the sputtering surface 7a of the target, and the edge 21b of the opening has an inner diameter slightly smaller than the outer diameter of the target 7. It is comprised so that it may have.
  • the overlapping portion 21a of the inner shield portion 21A of this example is formed so as to cover the entire outer peripheral portion of the sputtering surface 7a of the target 7.
  • the plasma reaches the outer shield portion 22 by the overlapping portion 21a of the inner shield portion 21A provided over the entire outer peripheral portion of the target 7 over the entire inner peripheral portion thereof. Therefore, the generation of the non-erosion region on the outer peripheral portion of the sputtering surface 7a of the target 7 due to the disappearance of the plasma can be suppressed over the entire outer peripheral portion of the target 7 to reduce the non-erosion region. . Further, since the attachment of the sputtered particles to the non-erosion region of the target 7 can be prevented over the entire outer peripheral portion of the sputtered surface 7a of the target 7, the deterioration of the film forming characteristics due to the separation of the sputtered particles is further prevented. can do.
  • FIGS. 3A and 3B are diagrams for explaining the purpose of the third example of the sputter film forming apparatus according to the present invention.
  • FIG. 4 is a plan view showing an internal configuration of a main part of a third example of the sputtering film forming apparatus.
  • portions corresponding to the first and second examples are denoted by the same reference numerals, and detailed description thereof will be omitted.
  • ions in the plasma generated by the discharge at the time of sputtering are captured by the magnetic field tracks generated by the magnet device 10 and correspond to the magnet device 10. Move in orbit.
  • the magnet device 10 is formed in a rectangular shape, the generated magnetic field track also has a shape close to a rectangle.
  • ions in the plasma 30 generated by the discharge are, for example, from the short side 12 s to the long side 12 l of the outer magnet 12 of the magnet device 10.
  • the angle at which ions change direction and move from the short side 12s to the long side 12l of the outer magnet 12 of the magnet device 10 because the plasma density of the plasma 30 increases when moving in a different direction.
  • FIG. 4 shows a means for solving the above-mentioned problem.
  • the overlapping portion 21c overlaps the pair of opposed corner portions 7c and 7d of the target 7 formed in a rectangular shape. , 21d.
  • FIG. a a pair of opposed corner portions 7c and 7d of the target 7 corresponding to the portions 31 and 32 of the shape protruding outside the plasma 30 described above, that is, FIG. a) Corners 7c, 7d of the target 7 corresponding to corners 12c, 12d in which ions change their directions from the short side 12s to the long side 12l of the outer magnet 12 of the magnet device 10 shown in (b), respectively. And overlapping portions 21c and 21d are provided so as to overlap.
  • FIGS. 5A and 5B show a fourth example of a sputter film forming apparatus according to the present invention.
  • FIG. 5A is a partial cross-sectional view showing an internal configuration
  • FIG. FIG. 3 is a plan view showing the internal configuration of the unit.
  • FIG. 6 is a plan view showing the internal configuration of a fifth example of the sputter film forming apparatus according to the present invention.
  • portions corresponding to those in the first example are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the sputter film forming apparatus 1C of the present example has an inner shield portion 23 provided with an overhang portion 23a that extends in the direction of the sputter surface 7a of the target 7. ing.
  • the projecting portion 23a of the inner shield portion 23 is formed in a rectangular frame shape having a slight gap with respect to the sputtering surface 7a of the target 7, and the edge 23b of the opening is slightly larger than the outer diameter of the target 7. It is configured to have a large inner diameter.
  • the overhang portion 23a of the inner shield portion 23 of this example is provided so as not to overlap with the sputtering surface 7a of the target 7, unlike the second example described above.
  • the plasma reaches the outer shield portion 22 over the entire inner peripheral portion by the overhang portion 23 a of the inner shield portion 23 provided over the entire outer peripheral portion of the target 7. Therefore, the generation of the non-erosion region on the outer peripheral portion of the sputtering surface 7a of the target 7 due to the disappearance of the plasma can be suppressed over the entire outer peripheral portion of the target 7 to reduce the non-erosion region. .
  • the parts 31, 32 formed in a rectangular shape and projecting outside the plasma 30 described above.
  • projections 23c, 23d projecting in the direction of the sputtering surface 7a of the target 7 are provided.
  • the overhang portions 23c and 23d are provided so as not to overlap with the sputtering surface 7a of the target 7.
  • the present invention is not limited to the above embodiment, and various changes can be made.
  • the case where one magnet device is used has been described as an example, but the present invention is not limited to this, and is also applicable to a case where a plurality of magnet devices are arranged side by side as described below. be able to.
  • FIG. 7 is a partial cross-sectional view illustrating an example of a sputter film forming apparatus using a plurality of magnet devices
  • FIG. 8 is a plan view illustrating an internal configuration of a main part of the example of the sputter film forming apparatus using the plurality of magnet devices.
  • FIG. 7 is a partial cross-sectional view illustrating an example of a sputter film forming apparatus using a plurality of magnet devices
  • FIG. 8 is a plan view illustrating an internal configuration of a main part of the example of the sputter film forming apparatus using the plurality of magnet devices.
  • the sputter film forming apparatus 1E of the present example has the same inner shield part 21 and outer shield part as the sputter film forming apparatus 1 of the first example shown in FIGS. 1 (a) and 1 (b).
  • the vacuum device 2 includes a vacuum chamber 2 provided with a magnet device 10 a on the back surface of the backing plate 8 in the vacuum chamber 2.
  • the magnet device 10a in this example is provided with a plurality (five in this example) of magnet means 10A to 10E on the magnet fixing plate 13 described above.
  • magnet means 10A to 10E have the same configuration, and are respectively installed on the elongated plate-shaped magnet fixing portion 16a parallel to the backing plate 8 in a direction for generating a magnetic field on the sputtering surface 7a of the target 7. It has a center magnet 11a and an outer peripheral magnet 12a installed in a continuous shape around the center magnet 11a.
  • the center magnet 11a is arranged in an elongated shape, for example, a rectangular shape extending in the same direction as the magnet fixing portion 16a. Moreover, it is arranged so as to surround the center magnet 11a at a predetermined distance from the peripheral portion of the center magnet 11a.
  • the annular outer peripheral magnet 12a surrounding the center magnet 11a does not necessarily mean one seamless annular shape as in the above-described magnet device 10. That is, as long as the shape surrounds the periphery of the center magnet 11a, it may be composed of a plurality of parts, or may have a linear shape at a certain portion. Further, it may be a closed ring or a shape in which the ring is deformed while being closed (in this example, a rectangular shape is shown).
  • the outer peripheral magnet 12a and the center magnet 11a of each of the magnet means 10A to 10E are arranged with magnetic poles having different polarities facing each other, whereby the center magnet 11a and the outer peripheral magnet 12a have different polarities with respect to the sputtering surface 7a of the target 7. Of the magnetic pole.
  • the magnet means 10A to 10E having such a configuration are arranged close to each other in the same direction so that the longitudinal sides of the adjacent outer peripheral magnets 12a face each other.
  • the magnet fixing plate 13 is attached to the moving device 14 described above, and the magnet device 10a It is configured to reciprocate in a direction orthogonal to the direction (longitudinal direction) in which each of the magnet means 10A to 10E extends along the sputtering surface 7a.
  • the magnet units 10A to 10E of the magnet device 10a located on both sides in the moving direction of the magnet device 10a and the portions 12a 1 and 12a of the magnet unit 10E on the moving direction side of the outer magnet 12a.
  • the size and arrangement of each of the magnet means 10A to 10E are set so that the distance between the two edges is smaller than the length between the edges in the moving direction of the target 7 in the moving direction (FIG. 8). reference).
  • the distance between the edges in the direction orthogonal to the moving direction of the magnet device 10a is determined by the movement of the target 7
  • the dimensions and arrangement positions of the magnet units 10A to 10E are set so as to be smaller than the length between the edges in the direction orthogonal to the direction.
  • the magnet device 10a is moved to a position where the entire outer peripheral portion of the outer peripheral magnet 12a enters the outer periphery of the sputtering surface 7a of the target 7 and a part of the outer peripheral portion of the outer peripheral magnet 12a (in this example, the moving direction side of the magnet device 10a).
  • portions 12a 1 and 12a 2) of which is configured to reciprocate between a position protruding outside the outer peripheral portion of the sputtering surface 7a of the target 7.
  • the magnet device 10a is configured such that the entire outer peripheral portion of the outer peripheral magnet 12a is located inside the inner peripheral portion of the inner shield portion 21 surrounding the periphery of the sputtering surface 7a of the target 7. a position to enter (in this example, portions 12a 1 and 12a 2 of the moving direction side) portion of the outer peripheral portion of the peripheral magnet 12a between a position where the protruding on the outer periphery side with respect to the inner peripheral portion of the inner shield part 21 It is configured to move.
  • the plasma of the sputter gas generated at the time of discharge and captured by the magnetic field by each of the magnet units 10A to 10E of the magnet device 10a is disposed close to the periphery of the outer periphery of the target 7. Since the inner shield portion 21 is shielded by the floating potential, it is prevented from reaching and contacting the outer shield portion 22 provided around the inner shield portion 21 and made of a conductive material at the ground potential.
  • the disappearance of the plasma due to the contact of the charges of the ions in the plasma with the outer shield portion 22 at the ground potential is avoided. Since the plasma reaches the outer peripheral portion of the sputtering surface 7a of the target 7, the generation of the non-erosion region in the outer peripheral portion of the sputtering surface 7a of the target 7 can be suppressed, and the plasma adheres to the non-erosion region of the target 7. It is possible to prevent a decrease in film formation characteristics due to separation of sputtered particles.
  • the magnet device 10a having the plurality of magnet means 10A to 10E since the magnet device 10a having the plurality of magnet means 10A to 10E is used, the power concentration on the magnetic field is reduced, and thus the input power can be increased.
  • the present invention is not limited to this, and the present invention is not limited to the case where there are six or more magnet units. Can be applied.
  • the magnet device 10a of the present example can be applied to the sputter film forming apparatuses 1A to 1D of the second to fifth examples described above.
  • ions in the plasma move from the short side to the long side of the outer magnet 12a of each of the magnet means 10A to 10E of the magnet device 10a.
  • the above-described sputter film forming apparatus 1B of the third example and the sputter film forming apparatus 1D of the fifth example are used. It is effective to combine them.
  • the ion is changed from the short side to the long side with respect to each of the magnet means 10A to 10E so that the ions move in the opposite direction to the outside of the plasma as described above.
  • the ions move along the part of the shape to be emitted, the ions in the plasma also cause the ions of the magnet means 10A and 10E at both ends in the moving direction of the magnet apparatus 10a as shown in FIG. This is because the ions come to move along the shape of the shape protruding outside the plasma at the opposing corner portions 12c and 12d where the ions change their directions from the short side to the long side of the outer peripheral magnet 12a. .
  • Sputter film forming apparatus Vacuum chamber 6.
  • Substrate (film forming target) 7 ... Sputtering target 7a ... Sputtered surfaces 7c, 7d ... Corner 7l ... Long side 7s ... Short side 8 ... Backing plate 10 .
  • Magnet device 11 ... Center magnet 12 ; Peripheral magnet 21 ; Inner shield part 22 ; Outer shield part

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PCT/JP2019/025800 2018-06-28 2019-06-28 スパッタ成膜装置 WO2020004619A1 (ja)

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JPH1072665A (ja) * 1996-07-10 1998-03-17 Applied Materials Inc プラズマ反応装置における電気的に浮遊したシールド
JP2001247956A (ja) * 2000-03-08 2001-09-14 Ulvac Japan Ltd 真空処理装置
WO2008149891A1 (ja) * 2007-06-04 2008-12-11 Canon Anelva Corporation 成膜装置
JP2010283360A (ja) * 2001-11-14 2010-12-16 Applied Materials Inc 配線を形成する方法及びプラズマスパッタリアクタ

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US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
KR101305114B1 (ko) * 2008-08-01 2013-09-05 샤프 가부시키가이샤 스퍼터링 장치
CN102782182B (zh) 2010-03-01 2015-09-09 株式会社爱发科 溅射装置
JP5265811B2 (ja) * 2010-06-03 2013-08-14 株式会社アルバック スパッタ成膜装置
CN104024471B (zh) * 2011-12-27 2016-03-16 佳能安内华股份有限公司 溅射装置
KR102182674B1 (ko) * 2013-12-20 2020-11-26 삼성디스플레이 주식회사 스퍼터링 장치

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Publication number Priority date Publication date Assignee Title
JPH1072665A (ja) * 1996-07-10 1998-03-17 Applied Materials Inc プラズマ反応装置における電気的に浮遊したシールド
JP2001247956A (ja) * 2000-03-08 2001-09-14 Ulvac Japan Ltd 真空処理装置
JP2010283360A (ja) * 2001-11-14 2010-12-16 Applied Materials Inc 配線を形成する方法及びプラズマスパッタリアクタ
WO2008149891A1 (ja) * 2007-06-04 2008-12-11 Canon Anelva Corporation 成膜装置

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KR102351170B1 (ko) 2022-01-14
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