WO2019227700A1 - 一种amoled薄膜封装结构及其制造方法 - Google Patents

一种amoled薄膜封装结构及其制造方法 Download PDF

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Publication number
WO2019227700A1
WO2019227700A1 PCT/CN2018/101838 CN2018101838W WO2019227700A1 WO 2019227700 A1 WO2019227700 A1 WO 2019227700A1 CN 2018101838 W CN2018101838 W CN 2018101838W WO 2019227700 A1 WO2019227700 A1 WO 2019227700A1
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layer
film layer
film
thin film
amoled
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PCT/CN2018/101838
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English (en)
French (fr)
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曹绪文
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武汉华星光电半导体显示技术有限公司
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Priority to US16/300,679 priority Critical patent/US10964911B2/en
Publication of WO2019227700A1 publication Critical patent/WO2019227700A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens

Definitions

  • the invention relates to the technical field of AMOLED, in particular, an AMOLED thin film packaging structure and a manufacturing method thereof.
  • liquid crystal displays Liquid Crystal Display, LCD
  • LCD Liquid Crystal Display
  • the LCD display has the advantages of light weight and good display effect, it still has some defects. For example, there is still room for further improvements in display viewing angle, refresh rate, volume, and power consumption.
  • OLED organic light-emitting diode
  • AMOLED organic light-emitting diode
  • AMOLED has many advantages such as self-emission, low driving voltage, high luminous efficiency, short response time, high definition and contrast, near 180 ° viewing angle, wide operating temperature range, flexible display and large-area full-color display.
  • the industry is recognized as the most promising display device.
  • AMOLED technology is developing towards flexible, thin film packaging and integrated touch functions.
  • the common AMOLED thin film package structure in the industry is usually a three-layer structure: a ceramic layer 410, an organic substance 420 layer, and a ceramic layer 430.
  • the thickness of the first ceramic layer 410 is in a range of 10 to 100 nm
  • the thickness of the second ceramic layer 430 is in a range of 500 to 2000 nm, so that the waterproof and oxygen-proof effects required for the package can be achieved.
  • touch layer structures 510, 520, and 530 have to be fabricated on the thin-film encapsulation structure.
  • the touch electrode layer 510 must pass through the boundary lead of the second ceramic layer 430 to the IC bonding area. As shown in FIG. 3, if the second ceramic layer 430 is too thick, the passing of the wire is likely to cause 510 fracture, thereby reducing the yield and affecting product performance.
  • One aspect of the present invention is to provide an AMOLED thin film packaging structure, which can effectively solve the problem of over-touch of the touch electrode layer in the existing thin film packaging structure, thereby improving the performance of the touch screen integrated thereon, and then improving the product performance.
  • An AMOLED thin film packaging structure is used for disposing a touch electrode layer, and includes a first ceramic layer, an organic layer, and a second ceramic layer.
  • the second ceramic layer includes a first film layer and a second film layer. Wherein, the second film layer is located on the first film layer, and the side ends of the second film layer shrink inwardly so that a concave first step portion is formed at the side ends of the second film layer and the first film layer.
  • the existing thick single-layer structure design of the second ceramic layer is changed to a double-thin-film layer structure design, and recessed step portions are provided at the side ends of the two film layers, so that the second ceramic layer can be effectively reduced.
  • the influence of the side end portion on the lead portion of the touch electrode layer makes it have a large space for placement, so that it is not easy to break, thereby ensuring the yield and product performance.
  • the second ceramic layer is not limited to adopting a two-film layer structure.
  • it may adopt a multi-film layer structure design.
  • it may be a 3 film layer structure, a 4 film layer structure, a 5 film layer structure, a 6 film layer structure, etc., and the specific may be determined as needed, and is not limited.
  • the film layers included therein preferably adopt the same thickness.
  • the step portions provided at the upper and lower film layer side ends of these film layers are arranged from the upper step to the lower step of each layer. 30 ⁇ 80 larger than the upper steps um.
  • the thicknesses of the first film layer and the second film layer are equal.
  • a third film layer is further disposed on the second film layer, and a concave second step portion is provided at a side end of the third film layer and the second film layer.
  • the first stepped portion is larger than the second stepped portion by 30 to 80 um.
  • the specific value can be 30, 40, 50, 60, 70, 80 um, and the specific value depends on the needs, and is not limited.
  • a fourth film layer is further disposed on the third film layer, and a concave third step portion is provided at a side end of the fourth film layer and the third film layer.
  • the second stepped portion is larger than the third stepped portion by 30 to 80 um.
  • the specific value can be 30, 40, 50, 60, 70, 80 um, and the specific value depends on the needs, and is not limited.
  • a fifth film layer is further disposed on the fourth film layer, and a concave fourth step portion is provided at a side end of the fifth film layer and the fourth film layer.
  • the third stepped portion is larger than the fourth stepped portion by 30 to 80 um.
  • the specific value can be 30, 40, 50, 60, 70, 80 um, and the specific value depends on the needs, and is not limited.
  • the first film layer, the second film layer, the third film layer, the fourth film layer, and the fifth film layer have the same thickness.
  • a thickness of the first film layer is smaller than 400 to 200 nm of the touch electrode layer.
  • the specific value can be 400, 350, 300, 250, 200 nm, and the specific value is determined as needed, and is not limited.
  • a thickness of the second film layer is smaller than 400 to 200 nm of the touch electrode layer.
  • the specific value can be 400, 350, 300, 250, 200 nm, and the specific value is determined as needed, and is not limited.
  • another aspect of the present invention provides a manufacturing method for manufacturing the AMOLED package structure according to the present invention, wherein a CVD (chemical vapor deposition) mask for a second ceramic layer of the thin film package structure is designed. ), It adopts at least two-layer structure, and a concave step portion is provided at the upper-layer side end of the two layers.
  • CVD chemical vapor deposition
  • the film forming device used in the manufacturing method includes at least two process chambers, and each process chamber deposits a thin film.
  • the sprouting cover preferably adopts a 5-layer structure, and each layer has a thickness of 200 to 300 nm.
  • the step portions formed at the side ends of the film layers are formed in order from top to bottom for each step. It is enlarged by 30 ⁇ 80um, and the film forming device preferably includes 5 process chambers.
  • the AMOLED thin film packaging structure according to the present invention changes the second ceramic layer in the existing thin film packaging structure from a single-layer thick film structure to a multi-film layer superimposed structure, and the sides of these multilayer films
  • the end is designed with a stepped recessed step structure from bottom to top, so that the stepped portion at the side end of the entire second ceramic layer has a concave slope trend, thereby effectively solving the existing problem of the existing single thick ceramic layer.
  • Line problem which in turn improves the performance of the integrated touch screen and improves product performance accordingly.
  • the thin film encapsulation structure according to the present invention adopts a multi-layer thin film superimposed structure design, it can effectively increase the overall compactness of the thin film, thereby reducing the problem of pinhole defects in the single thick film deposition process during the manufacturing process. , which improves the reliability of the package structure.
  • FIG. 1 is a partial structural schematic diagram of an AMOLED thin film packaging structure according to an embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of an AMOLED thin film packaging structure in the prior art
  • FIG. 3 is an enlarged view of a circled portion in FIG. 2.
  • An embodiment of the present invention provides an AMOLED package structure, on which a touch electrode layer is disposed, including a first ceramic layer, an organic layer, and a second ceramic layer.
  • the second ceramic layer includes a first film layer 431, a second film layer 432, a third film layer 433, a fourth film layer 434, and a fifth film, which are sequentially stacked from bottom to top.
  • the touch electrode layer 510 is disposed on the fifth film layer 435.
  • the first film layer 431, the second film layer 432, the third film layer 433, the fourth film layer 434, and the fifth film layer 435 are preferably uniform in thickness and 300 nm smaller than the thickness of the touch electrode layer 510. .
  • the above-mentioned film thickness values are illustrative, and the specific values may also be 400, 350, 300, 250, 200 nm, which are determined as needed and are not limited.
  • first film layer 431, the second film layer 432, the third film layer 433, the fourth film layer 434, and the fifth film layer 435 at the side ends of the first film layer 431, the fourth film layer 434, and the fifth film layer 435 are recessed in order from bottom to top.
  • the above-mentioned step expansion value is an exemplary description, and the specific value may be 30, 40, 50, 60, 70, 80 um, and the specific value is determined as needed, and is not limited.
  • the invention relates to an AMOLED thin film packaging structure, which changes the second ceramic layer in the existing thin film packaging structure from a single-layer thick-film structure to a multi-film-layer superimposed structure, and the side ends of these multi-layer films are from the bottom
  • a stepped concave step structure design is adopted, so that the stepped portion at the side end of the entire second ceramic layer has a concave inclination trend, thereby effectively solving the problem of the existing single-thick ceramic layer.
  • the performance of the integrated touch screen is improved, and the product performance is improved accordingly.
  • the thin film encapsulation structure according to the present invention adopts a multi-layer thin film superimposed structure design, it can effectively increase the overall compactness of the thin film, thereby reducing the problem of pinhole defects in the single thick film deposition process during the manufacturing process. , which improves the reliability of the package structure.
  • another embodiment of the present invention provides a manufacturing method for manufacturing the AMOLED package structure according to the present invention, wherein the thickness of the second ceramic layer involved in manufacturing is 1000 nm.
  • the five-layer structure design is used for the mask, each layer having a thickness of 200 nm, and is located at the side of each layer. Recessed steps are set at each place, and each step is enlarged downward by 50 um. This involves a film-forming device, the process chamber of which includes five chambers, each of which deposits a thin film.

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  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

本发明提供了一种AMOLED薄膜封装结构，其上用于设置触控电极层，包括第一陶瓷层、有机物层和第二陶瓷层。其中所述第二陶瓷层包括第一膜层和第二膜层，所述第二膜层位于所述第一膜层上，且其侧端向内收缩进而在所述第二膜层和第一膜层的侧端处形成一个内凹的第一台阶部。本发明将现有的第二陶瓷层的厚单层结构设计改为多薄膜层叠加结构设计，并在上下膜层侧端处设置内凹的台阶部，从而可以有效的降低第二陶瓷层的侧端部对触控电极层引线的影响，使其有较大的空间位置放置，从而使其不易断裂，进而保证了良率以及产品性能。

Description

一种AMOLED薄膜封装结构及其制造方法 技术领域
本发明涉及AMOLED技术领域，尤其是，其中的一种AMOLED薄膜封装结构及其制造方法。
 背景技术
已知，随着科学技术的不断进步，成像显示技术也相应的获得了极大的进步。从最初的CRT显示器开始，显示器技术开始了飞速的向前发展，不仅是在显示器本身的体积、重量上，而且在显示原理上也有了很大的不同。
以当前的情况来讲，液晶显示器（Liquid Crystal Display，LCD）已经取代CRT显示器成为业界的主流应用。但是，虽然LCD显示器具有重量轻、显示效果好等优点，但其还是有一些缺陷。例如，在显示视角、、刷新率、体积以及功耗方面依然存在更进一步的空间。
对此，业界则更进一步的开发出了OLED，以及在OLED的基础上开发出了AMOLED，这种下世代的显示技术。
其中AMOLED由于具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示器件。而目前AMOLED技术正向柔性、薄膜封装和集成触摸功能发展。
以薄膜封装为例，请参阅图2所示，业界常见的AMOLED薄膜封装结构通常是三层结构：一陶瓷层410、一有机物420层再加一陶瓷层430。其中第一陶瓷层410的厚度在10~100nm范围，第二陶瓷层430的厚度在500~ 2000nm范围，这样才能达到封装所需要的防水防氧效果。
由于集成触控功能屏还要在所述薄膜封装结构上制作触控层结构510、520和530，其中因触控电极层510要通过所述第二陶瓷层430的边界引线到IC绑定区，如图3所示，若是第二陶瓷层430太厚，则过线容易造成510断裂，从而降低良率，影响产品性能。
因此，确有必要开发一种新型的AMOLED薄膜封装结构，来克服现有技术中的缺陷。
 技术问题
本发明的的一个方面在于提供一种AMOLED薄膜封装结构，其能够有效解决现有薄膜封装结构中存在的触控电极层的过线问题，从而提高其上集成的触摸屏性能，进而提升产品性能。
 技术解决方案
本发明采用的技术方案如下：
一种AMOLED薄膜封装结构，其上用于设置触控电极层，包括第一陶瓷层、有机物层和第二陶瓷层。其中所述第二陶瓷层包括第一膜层和第二膜层。其中所述第二膜层位于所述第一膜层上，且其侧端向内收缩进而使得所述第二膜层和第一膜层的侧端处形成有一个内凹的第一台阶部。
本发明将现有的第二陶瓷层的厚单层结构设计改为双薄膜层结构设计，并在两膜层的侧端处设置内凹的台阶部，从而可以有效的降低第二陶瓷层的侧端部对触控电极层引线部的影响，使其有较大的空间位置放置，从而使其不易断裂，进而保证了良率以及产品性能。
进一步的，其中所述第二陶瓷层并不限于采用2膜层结构，在不同实施方式中，其可以采用多膜层结构设计。例如，其具体可以是3膜层结构、4膜层结构、5膜层结构、6膜层结构等等，具体可随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述第二陶瓷层采用的多膜层结构中，其包括的这些膜层优选采用相同厚度。
进一步的，在不同实施方式中，其中所述第二陶瓷层采用的多膜层结构中，其中这些膜层的上下膜层侧端处设置的台阶部，其从上层台阶向下每层下级台阶比上级台阶依次扩大30~80 um。
进一步的，在不同实施方式中，其中所述第一膜层和第二膜层的厚度相等。
进一步的，在不同实施方式中，其中所述第二膜层上还设置有第三膜层，所述第三膜层和第二膜层的侧端处设置有内凹的第二台阶部。
进一步的，在不同实施方式中，其中所述第一台阶部比第二台阶部扩大30~80 um。具体数值可以是30、40、50、60、70、80 um，具体随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述第三膜层上还设置有第四膜层，所述第四膜层和第三膜层的侧端处设置有内凹的第三台阶部。
进一步的，在不同实施方式中，其中所述第二台阶部比第三台阶部扩大30~80 um。具体数值可以是30、40、50、60、70、80 um，具体随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述第四膜层上还设置有第五膜层，所述第五膜层和第四膜层的侧端处设置有内凹的第四台阶部。
进一步的，在不同实施方式中，其中所述第三台阶部比第四台阶部扩大30~80 um。具体数值可以是30、40、50、60、70、80 um，具体随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述第一膜层、第二膜层、第三膜层、第四膜层和第五膜层厚度一致。
进一步的，在不同实施方式中，其中所述第一膜层的厚度小于所述触控电极层400~200nm。具体数值可以是400、350、300、250、200 nm，具体随需要而定，并无限定。
进一步的，在不同实施方式中，其中所述第二膜层的厚度小于所述触控电极层400~200nm。具体数值可以是400、350、300、250、200 nm，具体随需要而定，并无限定。
进一步的，本发明的又一个方面提供了一种制造本发明涉及的所述AMOLED封装结构的制造方法，其中在设计所述薄膜封装结构第二陶瓷层的CVD（化学气相沉积）萌罩（mask）时，其采用至少二层结构，并且在两层的上层侧端处设置内凹的台阶部。
进一步的，在不同实施方式中，其中所述制造方法使用的成膜装置包括至少2个腔体的工艺腔体，其中每个工艺腔体沉积一层薄膜。
进一步的，在不同实施方式中，其中所述萌罩优选采用5层结构，每层厚度在200~300nm，形成的这些膜层的侧端处形成的台阶部，从上到下每层台阶依次扩大30~80um，而所述成膜装置优选包括5个工艺腔体。
 有益效果
由上可知，本发明涉及的一种AMOLED薄膜封装结构，其将现有的薄膜封装结构中的第二陶瓷层由单一层厚膜结构变成多膜层叠加结构，并且这些多层膜的侧端处自下而上采用逐步内凹的台阶部结构设计，使得整个第二陶瓷层侧端处的台阶部成一个内凹的斜度走势，从而有效解决了现有单一厚陶瓷层存在的过线问题，进而提高了其上集成的触摸屏性能，并相应的提升了产品性能。
进一步的，由于本发明涉及的所述薄膜封装结构是采用多层薄膜叠加结构设计，因而可以有效增加薄膜整体的致密性，从而可以减少制造过程中单一厚膜沉积过程中存在的针孔缺陷问题，提高了封装结构的可靠性。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明涉及的一个实施方式提供的一种AMOLED薄膜封装结构的局部结构示意图；
图2是现有技术中的AMOLED薄膜封装结构的结构示意图；
图3是图2中圆圈部分的放大图。
 本发明的最佳实施方式
以下将结合附图和实施例，对本发明涉及的一种AMOLED封装结构及其制造方法的技术方案作进一步的详细描述。
本发明的一个实施方式提供了一种AMOLED封装结构，其上用于设置触控电极层，包括第一陶瓷层、有机物层和第二陶瓷层。
请参阅图1所示，其中所述第二陶瓷层包括从下到上依次叠加设置的第一膜层431、第二膜层432、第三膜层433、第四膜层434和第五膜层435。所述第五膜层435之上设置所述触控电极层510。
其中所述第一膜层431、第二膜层432、第三膜层433、第四膜层434和第五膜层435优选为厚度一致，并比所述触控电极层510的厚度小300nm。其中上述膜层厚度数值为举例性说明，具体数值也可以是400、350、300、250、200 nm，具体随需要而定，并无限定。
进一步的，其中所述第一膜层431、第二膜层432、第三膜层433、第四膜层434和第五膜层435的侧端处，从下到上依次内凹设置有第一台阶部、第二台阶部、第三台阶部和第四台阶部。这些台阶部从上到下，每层台阶依次扩大50 um。即最下的第一台阶部深度最大，最上的第四台阶部深度最小。其中上述台阶扩大数值为举例性说明，具体数值可以是30、40、50、60、70、80 um，具体随需要而定，并无限定。
本发明涉及的一种AMOLED薄膜封装结构，其将现有的薄膜封装结构中的第二陶瓷层由单一层厚膜结构变成多膜层叠加结构，并且这些多层膜的侧端处自下而上采用逐步内凹的台阶部结构设计，使得整个第二陶瓷层侧端处的台阶部成一个内凹的斜度走势，从而有效解决了现有单一厚陶瓷层存在的过线问题，进而提高了其上集成的触摸屏性能，并相应的提升了产品性能。
进一步的，由于本发明涉及的所述薄膜封装结构是采用多层薄膜叠加结构设计，因而可以有效增加薄膜整体的致密性，从而可以减少制造过程中单一厚膜沉积过程中存在的针孔缺陷问题，提高了封装结构的可靠性。
进一步的，本发明的又一实施方式提供了一种制造本发明涉及的所述AMOLED封装结构的制造方法，其中涉及制造的所述第二陶瓷层的厚度为1000nm。
其在设计所述薄膜封装结构的第二陶瓷层的CVD（化学气相沉积）萌罩（mask）时，对该萌罩采用五层结构设计，每层厚度为200nm，并且在各层的侧端处设置内凹的台阶部，每层台阶向下依次扩大50 um。其中涉及使用的成膜装置，其工艺腔体包括5个腔体，每个工艺腔体沉积一层薄膜。
本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。

Claims (10)

  1. 一种AMOLED薄膜封装结构，其上用于设置触控电极层，包括第一陶瓷层、有机物层和第二陶瓷层，其中所述第二陶瓷层包括第一膜层和第二膜层；
    其中所述第二膜层位于所述第一膜层上，且其侧端向内收缩进而使得所述第二膜层和第一膜层的侧端处形成有一个内凹的第一台阶部。
  2. 根据权利要求1所述的一种AMOLED薄膜封装结构，其中所述第一膜层和第二膜层的厚度相等。
  3. 根据权利要求1所述的一种AMOLED薄膜封装结构，其中所述第二膜层上还设置有第三膜层，所述第三膜层和第二膜层的侧端处设置有内凹的第二台阶部。
  4. 根据权利要求3所述的一种AMOLED薄膜封装结构，其中所述第一台阶部比第二台阶部扩大30~80 um。
  5. 根据权利要求3所述的一种AMOLED薄膜封装结构，其中所述第三膜层上还设置有第四膜层，所述第四膜层和第三膜层的侧端处设置有内凹的第三台阶部。
  6. 根据权利要求5所述的一种AMOLED薄膜封装结构，其中所述第二台阶部比第三台阶部扩大30~80 um。
  7. 根据权利要求5所述的一种AMOLED薄膜封装结构，其中所述第四膜层上还设置有第五膜层，所述第五膜层和第四膜层的侧端处设置有内凹的第四台阶部。
  8. 根据权利要求7所述的一种AMOLED薄膜封装结构，其中所述第三台阶部比第四台阶部扩大30~80 um。
  9. 根据权利要求7所述的一种AMOLED薄膜封装结构，其中所述第一膜层、第二膜层、第三膜层、第四膜层和第五膜层厚度一致；且其中所述第一膜层的厚度小于所述触控电极层400~200nm。
  10. 一种用于制造权利要求1所述的一种AMOLED薄膜封装结构的制造方法，其中在设计所述薄膜封装结构第二陶瓷层的CVD萌罩时，所述萌罩采用至少二层结构，并且在两层的上层侧端处设置一内凹的台阶部。
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