WO2019198343A1 - Dispositif de polissage double face pour pièce à travailler - Google Patents

Dispositif de polissage double face pour pièce à travailler Download PDF

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Publication number
WO2019198343A1
WO2019198343A1 PCT/JP2019/005924 JP2019005924W WO2019198343A1 WO 2019198343 A1 WO2019198343 A1 WO 2019198343A1 JP 2019005924 W JP2019005924 W JP 2019005924W WO 2019198343 A1 WO2019198343 A1 WO 2019198343A1
Authority
WO
WIPO (PCT)
Prior art keywords
surface plate
double
hole
workpiece
thickness
Prior art date
Application number
PCT/JP2019/005924
Other languages
English (en)
Japanese (ja)
Inventor
真美 久保田
啓一 高梨
Original Assignee
株式会社Sumco
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Sumco filed Critical 株式会社Sumco
Publication of WO2019198343A1 publication Critical patent/WO2019198343A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T10/00—Road transport of goods or passengers
    • Y02T10/10—Internal combustion engine [ICE] based vehicles
    • Y02T10/40—Engine management systems

Definitions

  • the present invention relates to a double-side polishing apparatus for workpieces.
  • an upper surface plate 91 (or lower surface plate) is provided with a through hole 92, and a measurement mechanism (not shown) is used to remove the through hole 92.
  • a double-side polishing apparatus 100 capable of measuring the thickness of the wafer W in real time during polishing is described.
  • the polishing surface of the upper and lower surface plates is provided with a polishing pad 94 having a hole 93 having a diameter d 3 larger than the diameter d 1 of the through hole 92 at a position corresponding to the through hole 92, and the through hole 92.
  • a window material 95 having a diameter d2 larger than the diameter d1 of the polishing pad 94 and smaller than the diameter d3 of the hole 93 of the polishing pad 94 and having a thickness smaller than that of the polishing pad 94 is provided.
  • the window material 95 is fixed to the upper surface plate 91 (or the lower surface plate) by an adhesive layer 96.
  • the polishing slurry jumps and contacts the adhesive layer 96 during polishing, and the adhesive layer 96 may elute into the polishing slurry and the polishing slurry may flow into the through hole 92. .
  • the polishing slurry flows into the through-hole 92, the upper surface of the window member 95 becomes cloudy and the thickness measurement accuracy of the wafer W deteriorates.
  • the wafer W cannot be polished on both sides while accurately measuring the thickness of the wafer W over a long period of time.
  • the present invention is intended to solve the above-described problems, and an object of the present invention is to perform a double-side polishing of a workpiece while accurately measuring the thickness of the workpiece over a longer period of time than in the past.
  • An object of the present invention is to provide a double-side polishing apparatus.
  • a rotating surface plate having an upper surface plate and a lower surface plate, a sun gear provided at a central portion of the rotating surface plate, an internal gear provided at an outer peripheral portion of the rotating surface plate, and the upper surface plate
  • a workpiece double-side polishing apparatus comprising a carrier plate provided between the lower surface plate and one or more holding holes for holding the workpiece,
  • the upper surface plate or the lower surface plate is provided with one or more through holes penetrating from the upper surface to the lower surface of the upper surface plate or the lower surface plate,
  • the polishing pad is provided with a hole at a position corresponding to the through hole,
  • a work thickness measuring instrument capable of measuring the thickness of the work through the one or more through holes and holes during double-side polishing of the work;
  • a solid window material is inserted into each of the one or more through holes, and the window material includes a cylindrical portion and a flange portion having a diameter larger than the diameter of the through hole.
  • the cylindrical portion has a protruding portion that has a length larger than the thickness of the upper surface plate or the lower surface plate and protrudes from the through hole, and the protruding portion is fixed to the upper surface plate by a fixing member.
  • the double-side polishing apparatus according to [1] which is fixed to the upper surface of the lower surface plate or the lower surface of the lower surface plate.
  • a recess is provided at the bottom of the side wall of the upper surface plate that defines the through hole, or at the top of the side wall of the lower surface plate that defines the through hole, and the flange portion of the window member is formed in the recess.
  • FIG. 2 shows an example of a double-side polishing apparatus for workpieces according to the present invention.
  • the double-side polishing apparatus 1 shown in FIG. 1 includes a rotating surface plate 4 having an upper surface plate 2 and a lower surface plate 3 opposite to the upper surface plate 2, a sun gear 5 provided at the center of rotation of the rotating surface plate 4, And an internal gear 6 provided in an annular shape on the outer periphery.
  • a polishing pad 7 is affixed to the opposing surfaces of the upper and lower rotating surface plates 4, that is, the lower surface that is the polishing surface of the upper surface plate 2 and the upper surface that is the polishing surface of the lower surface plate 3. Yes.
  • the apparatus 1 includes a carrier plate 9 disposed between the upper surface plate 2 and the lower surface plate 3, and this carrier plate 9 holds one workpiece W.
  • the above holding hole 8 is provided.
  • the apparatus 1 includes only one carrier plate 9, but may include a plurality of carrier plates 9.
  • a workpiece (wafer in this embodiment) W is held in the holding hole 8.
  • the device 1 can rotate the sun gear 5 and the internal gear 6 to cause the carrier plate 9 to revolve and rotate to cause planetary motion. That is, while supplying the polishing slurry, the carrier plate 9 is caused to make a planetary movement, and at the same time, the upper surface plate 2 and the lower surface plate 3 are rotated relative to the carrier plate 9 to be stuck to the upper and lower rotating surface plates 4. Both surfaces of the wafer W can be simultaneously polished by sliding the polishing pad 7 and both surfaces of the wafer W held in the holding holes 8 of the carrier plate 9.
  • the upper surface plate 2 is provided with one or more through holes 10 penetrating from the upper surface of the upper surface plate 2 to the lower surface that is the polishing surface.
  • one through hole 10 is disposed at a position passing through the vicinity of the center of the wafer W.
  • the through hole 10 is provided in the upper surface plate 2, but may be provided in the lower surface plate 3, and one or more through holes 10 are provided in either the upper surface plate 2 or the lower surface plate 3.
  • one hole 10 is provided, but a plurality of holes 10 may be arranged on the same circumference of the upper surface plate 2.
  • the polishing pad 7 affixed to the upper surface plate 2 also has a hole 11 penetrating at a position corresponding to the through hole 10. It is the state which penetrated to the lower surface.
  • a workpiece thickness measuring device 12 is provided above the through hole 10, and the thickness of the wafer W can be measured in real time through the through hole 10 and the hole 11 during double-side polishing of the wafer W. It is.
  • the workpiece thickness measuring instrument 12 can be, for example, a variable wavelength infrared laser measuring instrument. According to such a measuring instrument, the thickness of the wafer W can be measured by evaluating the interference between the reflected light on the front surface of the wafer W and the reflected light on the back surface.
  • a solid window member 13 is inserted into each of the through holes 10.
  • the window member 13 includes a cylindrical portion 14 and a flange portion 15 having a diameter larger than the diameter of the through hole 10, and the cylindrical portion 14 and the flange portion 15 are integrally formed.
  • an annular recess 14b is provided on the side surface 14a of the cylindrical portion 14, and the cylindrical portion 14 is inserted into the through hole 10 from the polishing pad 7 side in a state where the O-ring 16 is disposed in the annular recess 14b.
  • the space between the through hole 10 and the cylindrical portion 14 is sealed by the O-ring 16.
  • the window material 13 is fixed to the upper surface plate 2 (or the lower surface plate 3) by an adhesive layer (for example, double-sided tape).
  • the cylindrical portion 14 of the window member 13 has a protruding portion 14 d that has a length larger than the thickness of the upper surface plate 2 (or the lower surface plate 3) and protrudes from the through hole 10.
  • the projecting portion 14 d may be fixed to the upper surface 2 a of the upper surface plate 2 (the lower surface of the lower surface plate 3) by a fixing member (for example, a nut) 18.
  • a fixing member for example, a nut
  • a recess 2 b is provided at the bottom of the side wall of the upper surface plate 2 (or the top of the side wall of the lower surface plate) that defines the through hole 10. .
  • the lower surface 15b of the upper surface plate 2 and the lower surface 2c of the upper surface plate 2 are made the same as the sum of the depth of the concave portion 2b of the upper surface plate 2 and the thickness of the flange portion 15 and the thickness of the adhesive layer 17. 3) is preferably arranged on the same plane.
  • the window material 13 can be arrange
  • polishing can be performed favorably.
  • the polishing pad 7 covers the outer peripheral portion 15 c of the flange portion 15.
  • the gap between the polishing pad 7 and the outer peripheral portion of the lower surface 15 b of the flange portion 15 is reduced from the hole 11 of the polishing pad 7 as compared with the configuration shown in FIG. 4. It is necessary to pass through, and the inflow of the polishing slurry can be further suppressed.
  • the thickness of the silicon wafer (diameter: 300 mm, conductivity type: p ⁇ , p ++ ) was measured using the double-side polishing apparatus 100 described in Patent Document 1 shown in FIG. Specifically, the upper surface plate 2 was spaced apart from the silicon wafer W and disposed above, and the wafer thickness measuring device 12 was disposed at a position where the distance from the silicon wafer surface was about 1 m.
  • the near-infrared light (wavelength: 1310 nm) is irradiated from the wafer thickness measuring device 12 to the surface of the silicon wafer W, the reflection intensity due to the interference between the front surface reflected light and the back surface reflected light of the silicon wafer W, and the thickness of the silicon wafer W.
  • the present invention is useful in the semiconductor wafer manufacturing industry because the workpiece can be polished on both sides while accurately measuring the thickness of the workpiece over a longer period of time than before.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

L'invention concerne un dispositif de polissage double face pour une pièce à travailler, lequel dispositif peut effectuer un polissage double face de la pièce à travailler tout en maintenant la précision, pendant une période de temps plus longue que les dispositifs classiques, dans la mesure de l'épaisseur de la pièce à travailler. Dans ce dispositif de polissage double face (1), une plaque de surface supérieure (2) ou une plaque de surface inférieure comporte un ou plusieurs trous traversants (10) qui pénètrent à partir de la surface supérieure jusqu'à la surface inférieure de la plaque de surface supérieure (2) ou de la plaque de surface inférieure. Un tampon de polissage (7) comporte un trou (11) dans une position correspondant au trou traversant (10). Le dispositif de polissage double face (1) comporte en outre un dispositif de mesure d'épaisseur de pièce à travailler qui mesure l'épaisseur d'une pièce à travailler (W) tout en entreprenant un polissage double face de la pièce à travailler (W). La présente invention est caractérisée en ce que : chacun du ou des trous traversants (10) a, inséré à l'intérieur de celui-ci, un élément de fenêtre plein (13) ; l'élément de fenêtre (13) comprend une section cylindrique (14) et une section de bride (15) qui a un diamètre supérieur à celui du trou traversant (10) ; un creux de forme annulaire (14b) est réalisé dans une surface latérale (14a) de la section cylindrique (14) ; et, dans un état dans lequel un joint torique (16) est disposé dans le creux de forme annulaire (14b), la section cylindrique (14) est insérée dans le trou traversant (10) à partir du côté du tampon de polissage (7).
PCT/JP2019/005924 2018-04-11 2019-02-18 Dispositif de polissage double face pour pièce à travailler WO2019198343A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-076296 2018-04-11
JP2018076296A JP7035748B2 (ja) 2018-04-11 2018-04-11 ワークの両面研磨装置

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WO2019198343A1 true WO2019198343A1 (fr) 2019-10-17

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TW (1) TWI731305B (fr)
WO (1) WO2019198343A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115297997A (zh) * 2020-03-23 2022-11-04 胜高股份有限公司 工件的双面抛光装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7168109B1 (ja) * 2022-01-24 2022-11-09 信越半導体株式会社 両面研磨装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030180973A1 (en) * 2002-02-04 2003-09-25 Kurt Lehman Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool
US20030205325A1 (en) * 2001-12-12 2003-11-06 Lam Research Corporation Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection
JP2011249833A (ja) * 1995-03-28 2011-12-08 Applied Materials Inc Ｃｍｐプロセス中のインシチュウ終点検出に用いるポリッシングパッド
JP2017052027A (ja) * 2015-09-08 2017-03-16 株式会社東京精密 ウェーハ研磨装置

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
JP5917994B2 (ja) * 2012-04-23 2016-05-18 スピードファム株式会社 研磨装置の計測用窓構造
JP6197598B2 (ja) * 2013-11-18 2017-09-20 株式会社Sumco ワークの両面研磨装置及び両面研磨方法
JP2016064495A (ja) * 2014-09-24 2016-04-28 東洋ゴム工業株式会社 積層研磨パッド及びその製造方法
JP6622105B2 (ja) * 2016-02-10 2019-12-18 スピードファム株式会社 平面研磨装置
JP6622117B2 (ja) * 2016-03-08 2019-12-18 スピードファム株式会社 平面研磨装置及びキャリア

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011249833A (ja) * 1995-03-28 2011-12-08 Applied Materials Inc Ｃｍｐプロセス中のインシチュウ終点検出に用いるポリッシングパッド
US20030205325A1 (en) * 2001-12-12 2003-11-06 Lam Research Corporation Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection
US20030180973A1 (en) * 2002-02-04 2003-09-25 Kurt Lehman Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool
JP2017052027A (ja) * 2015-09-08 2017-03-16 株式会社東京精密 ウェーハ研磨装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115297997A (zh) * 2020-03-23 2022-11-04 胜高股份有限公司 工件的双面抛光装置

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Publication number Publication date
JP2019181632A (ja) 2019-10-24
TWI731305B (zh) 2021-06-21
TW201944479A (zh) 2019-11-16
JP7035748B2 (ja) 2022-03-15

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